The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
BD9V101MUF-LB BD9V101MUF-LB ECAD Model ROHM Semiconductor 16V to 60V, 1A 1ch 2.1MHz Synchronous Buck Converter Integrated FET (Industrial Grade)
BD9G102G-LB BD9G102G-LB ECAD Model ROHM Semiconductor 6V to 42V, 0.5A 1ch Simple Buck Converter Integrated FET (Industrial Grade)
BD9G341AEFJ BD9G341AEFJ ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET
BD9A600MUV BD9A600MUV ECAD Model ROHM Semiconductor 2.7V to 5.5V Input, 6A Integrated MOSFET, Single Synchronous Buck DC/DC Converter
BD9G341AEFJ-LB BD9G341AEFJ-LB ECAD Model ROHM Semiconductor 12V to 76V, Buck switching regulator with integrated 150mΩ power MOSFET (Industrial Grade)
BD9C601EFJ BD9C601EFJ ECAD Model ROHM Semiconductor 4.5V to 18V Input, 6.0A Integrated MOSFET 1ch Synchronous Buck DC/DC Converter

TRANSISTOR SOT-23 marking JE Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
S763T

Abstract: JY marking transistor TRANSISTOR SOT-23 marking JE
Text: -92 Transistors Orientation of transistor on tape1 1 Additional marking for specialsa ) ') 06 * View on fiat side , , the transistor orientation on the tape is shown in Fig. 7.4 and Fig. 7.5. Additional marking " Z":Zigzag folded tape in spe cial box. Marking for orientation of transistor not necessary, because box can , lALââ -r- jy- 2. / S 763 T Silicon NPN Planar RF Transistor Applications: RF amplifier up to GHz , R JE B O ^CEm J 25 15 2.5 Min. Typ. Max. 50 nA V V V 250 150 mV 1 1.6 0.6 0.7


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PDF 000543Q 569-GS S763T JY marking transistor TRANSISTOR SOT-23 marking JE
TRANSISTOR BC 136

Abstract: TRANSISTOR SOT-23 marking JE
Text: transistor on tape1 1 Additional marking for specialsa ) ') 06 * View on flat side of transistor , view on gummed tape 05 « =View on round side of transistor , view on gummed tape Additional marking " 0 taping , . Marking for orientation of transistor not necessary, because box can be opened on top or bottom Example , G G BFR 96 T 'J /-U Silicon NPN Planar RF Transistor Applications: RF-ampllfier up to GHz , Typ. Max. V ^(B R JE B O " fe ^FE 3 25 25 50 52 25°C 4 5 1.0 1.3 5.0 1.4 GHz pF pF pF


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PDF JEDECTO50 569-GS TRANSISTOR BC 136 TRANSISTOR SOT-23 marking JE
sot-23 Transistor MARKING CODE ZG

Abstract: ZG SOT23 transistor marking zg
Text: SIEMENS NPN Silicon RF Transistor · For low noise, low-power amplifiers in mobile communication , BFR 280 ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Type Pin Configuration B FR 280 REs LU II C M Package SOT- 23 Q62702-F1298 1 =B 3 , (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 6.472 fA VAF = NE = VAR = NC = RBM = C JE = TF = ITF = V JC = TR = M JS = XTI = 25.609 1.6163 5.6909 1.0651 14.999 36.218 11.744 6.2179


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PDF 900MHz OT-23 Q62702-F1298 sot-23 Transistor MARKING CODE ZG ZG SOT23 transistor marking zg
JE180

Abstract: JE182
Text: SILICO N TRANSISTOR D E SIG N E D FOR LOW PO W ER A U D IO . AM PLIFIER A N D LOW CU RREN T HIGH SP , i Collector-Base Voltage: M J E 1 8 0 i : M JE 1 81 | : M JE182 f Collector-Emitter Voltage ' : M JE180 : M JE 181 : M JE182 Emitter-Base Voltage Collector Current (DC) Collector Current , Characteristic i t ! Collector Emitter Sustaining Voltage ; : M JE180 j : M JE 181 | : M J E 1 82 Collector Cutoff Current : M J E 1 8 0 iM J E 1 8 1 : M JE 1 82 : M JE180 : M JE 181 M JE182 Emitter


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PDF MJE180/181/182 JE182 JE180 GQG77fe JE180 JE182
transistor NPN 3D SOT 153

Abstract: BRY39 BCY87 TAG thyristor BFR49 si controlled tetrode switch BRY3 BCY88 BCY89 BR101
Text: transistor for amplifiers up to S—band frequencies AN 20 0.025 0.18 5 typ. - - ML15/2B \ ML15/4B ( J N-P-N , 275 <1.4 50 BRY39 Integrated p-n-p-n transistor pair Applications include controlled switch, programmable unijunction transistor and thyristor tetrode. TO-72 BA6 70 70 2.5 175 150 275 <1.4 100 BRY56 , JE DEC outline drawings. 56 57 2.54 1 2 P1 ci(.) k(-) P2 e c 0 2.51 max. SOD-42 , 1.42 , obtained from individual data sheets in the Technical Handbook or from standard B.S. or JE DEC outline


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PDF BFR49 ML15/2B ML15/4B 0-26V BCY87 BCY88 BCY89 h--22-> crt6-25 transistor NPN 3D SOT 153 BRY39 TAG thyristor si controlled tetrode switch BRY3 BR101
t636

Abstract: 557 sot143 T636 A S 223 858 015 636
Text: VCOs operating at 5 volts or less. Because this transistor family was specifically designed to operate , MA4T6365 series transistors are available in hermetic Micro-X packages, the SOT- 23 , the SOT-143, and in , reel. All of M/A-COM's silicon bipolar transistor families use silicon dioxide and silicon nitride passivation to assure low 1/F noise for amplifier and oscillator applications. SOT- 23 SOT-143 S , 10 V 6V 1.5 V 65 mA 200°C C Û LU > TS -65°C to + 200°C -65°C to +125°C Chip (MA4T636500) SOT- 23


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PDF MA4T6365 MA4T6365 OT-143 MA4T636539 t636 557 sot143 T636 A S 223 858 015 636
2002 - TRANSISTOR LWW 20

Abstract: a8811 rt 8800b TRANSISTOR SOT-23 marking JE TRANSISTOR LWW 31 8800S 0c sot-89 O A B C sot-89 TRANSISTOR D 2627 TRANSISTOR LWW 17
Text: voltage, making them ideal for battery applications. The space-saving SOT- 23 , SOT-25, SOT-89 and TO , Current Fold-back l Space-Saving SOT- 23 , SOT-25, SOT-89 and TO-92 Package The AME8800/8811 is , n Pin Configuration TO-92 Front View AME8800 1. GND 2. VIN 3. VOUT 1 SOT- 23 Top View , P a cka ge Op e ra ting Te m p. A M E 8800A E E T A A A ww 3.3V S OT- 23 -40 O C to + 85 O C A M E 8800B E E T A A B ww 3.0V S OT- 23 -40 O C to + 85 O C A M E 8800CE E T


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PDF AME8800 300mA AME8800/8811 OT-23, OT-25, OT-89 2006-DS8800/8811-F TRANSISTOR LWW 20 a8811 rt 8800b TRANSISTOR SOT-23 marking JE TRANSISTOR LWW 31 8800S 0c sot-89 O A B C sot-89 TRANSISTOR D 2627 TRANSISTOR LWW 17
Not Available

Abstract: No abstract text available
Text: regulator housed in a small SOT-23-3 package, rated at 350 mW. An internal PN P transistor is used to , °C. N ote 2: R e fe r to “ D e fin itio n o f T e rm s .” N ote 3: R ip p le re je c tio n a n , a p a c ito r use d. N ote 4: R ip p le re je c tio n is m e a s u re d a t V R = 2 0 0 m V rm s , 25 °C. N ote 2: R e fe r to “ D e fin itio n o f T e rm s .” N ote 3: R ip p le re je c tio n , e c a p a c ito r use d. N ote 4: R ip p le re je c tio n is m e a s u re d a t V R = 2 0 0 m V rm


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PDF TK715XX OT-23-3) TK715xx OT-23-3
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMMT491A NPN BISS transistor Preliminary , Philips Semiconductors Preliminary specification NPN BISS transistor FEATURES · High current (max , DESCRIPTION NPN BISS (Breakthrough In Small Signal) transistor in a SOT23 plastic package. PNP complement: PMMT591 A. base emitter collector PMMT491A DESCRIPTION 3 2 1 2 MAM255 MARKING Top View TYPE NUMBER PMMT491A MARKING CODE Fig. 1 Simplified outline (SOT23) and symbol. 9Ap QUICK


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PDF PMMT491A PMMT591 PMMT491A MAM255 115104/650/01/pp8
Not Available

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 2 EMITTER CASE 318-08, STYLE 6 SOT- 23 (TO-236AB) MAXIMUM RATINGS Symbol Value Unit VCEO 25 Vdc VCBO 30 Vdc v EBO Rating 3.0 Vdc C ollector-Em itter Voltage Collector-Base Voltage Em itter-Base Voltage DEVICE MARKING , 100 - 1.0 S '-2 .0 E .£= jE jo a -3 .o 700 -4 .0 1000 MHz 100 200 300


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PDF MMBTH10LT1 OT-23 O-236AB)
BAV46

Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
Text: Microwave transistors will be found in the transistor section of this guide 44 OUTLINES and DIMENSIONS , JE DEC outline drawings. 56 57 2.54 1 2 P1 ci(.) k(-) P2 e c 0 2.51 max. SOD-42 , 1.42 , obtained from individual data sheets in the Technical Handbook or from standard B.S. or JE DEC outline , SOT- 23 1 2 3 X1 b e c X2 s d q X3 ne a k X4 al a2 k X5 k1 k2 a X6 k1 02 common X7 e b c r'-M , sheets in the Technical Handbook or from standard B.S. or JE DEC outline drawings. 60 19 (*Z). XDUl 9


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PDF AAY34 S0D-42 BAT10 SAT11 BAT39 CV7762) BAT39A OD-42 BAT50R SO-26 BAV46 bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAW96 BAV71
PMBT4401

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4401 NPN switching transistor Product specification , Product specification NPN switching transistor FEATURES · High current (max. 600 mA) · Low voltage , emitter collector PMBT4401 DESCRIPTION DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT4403. MARKING TYPE NUMBER PMBT4401 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig. 1 Simplified outline (SOT23) and symbol. MARKING CODE«1) *2X T o p view


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PDF PMBT4401 PMBT4401 PMBT4403. 115002/00/03/pp8
PMBT2369

Abstract: 10 SP 025
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT2369 NPN switching transistor Product , Semiconductors Product specification NPN switching transistor FEATURES · Low current (max. 200 mA) · Low , . 3 base emitter collector PMBT2369 DESCRIPTION DESCRIPTION NPN switching transistor in a SOT23 plastic package. 3 MARKING TYPE NUMBER PMBT2369 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig. 1 Simplified outline (SOT23) and symbol. MARKING CODE«1) *1 J Top View MAM255


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PDF PMBT2369 PMBT2369 MAM255 115002/00/03/pp8 10 SP 025
PDTA124ET

Abstract: No abstract text available
Text: resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC124ET. MARKING TYPE NUMBER PDTA124ET MARKING CODE«1) *05 PINNING PIN 1 2 3 Note DESCRIPTION base/input emitter/ground (+ , resistor-equipped transistor FEATURES · Built-in bias resistors R1 and R2 (typ. 22 k£2 each) · Simplification of , em iconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In , dissipation storage temperature junction temperature operating ambient temperature Note 1. Transistor


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PDF PDTA124ET PDTC124ET. 115002/00/05/pp8 PDTA124ET
EW NPN

Abstract: PDTC123ET PDTA123ET
Text: resistor-equipped transistor FEATURES · Built-in bias resistors R1 and R2 (typ. 2.2 k£2 each) · Simplification of , resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA123ET. Fig. 1 Simplified outline (SOT23) and symbol. PINNING PIN 1 2 3 base/input emitter/ground collector/output DESCRIPTION MARKING TYPE NUMBER PDTC123ET MARKING CODE«1) *26 Note 1. * = p : Made in Hong Kong. * = t : Made in , resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).


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PDF PDTC123ET MAM097 PDTA123ET. 115002/00/03/pp8 EW NPN PDTC123ET PDTA123ET
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BSV52 NPN switching transistor Product specification , Product specification NPN switching transistor FEATURES · Low current (max. 100 mA) · Low voltage (max , portable equipment. 3 base emitter collector DESCRIPTION BSV52 DESCRIPTION NPN switching transistor in a SOT23 plastic package. 3 _ 3 MARKING TYPE NUMBER BSV52 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig. 1 Simplified outline (SOT23) and symbol. MARKING CODE«1) B2


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PDF BSV52 BSV52 115002/00/03/pp8
PDTA143

Abstract: No abstract text available
Text: PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC143ET. MARKING TYPE NUMBER PDTA143ET MARKING CODE«1) *01 PINNING PIN 1 2 3 Note DESCRIPTION base/input , resistor-equipped transistor FEATURES · Built-in bias resistors R1 and R2 (typ. 4.7 k£2 each) · Simplification of , 2 Philips S em iconductors Product specification PNP resistor-equipped transistor , Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS


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PDF PDTA143ET PDTC143ET. 115002/00/04/pp8 PDTA143
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBTA92 PNP high-voltage transistor Product , Semiconductors Product specification PNP high-voltage transistor FEATURES · Low current (max. 100 mA) · , equipment. 3 base emitter collector PMBTA92 DESCRIPTION DESCRIPTION PNP high-voltage transistor in a SOT23 plastic package. NPN complement: PMBTA42. MARKING TYPE NUMBER PMBTA92 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig. 1 Simplified outline (SOT23) and symbol. MARKING CODE


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PDF PMBTA92 PMBTA42. PMBTA92 115002/00/04/pp8
PDTA143Z

Abstract: PDTC143Z PDTA143
Text: resistor-equipped transistor FEATURES · Built-in bias resistors R1 and R2 (typ. 4.7 k£2 and 47 k£2 respectively) · , external resistors. I1 T O p V ie w DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic , . MARKING TYPE NUMBER PDTC143ZT MARKING CODE«1) *18 Note 1. * = p : Made in Hong Kong. * = t : Made , iconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with , operating ambient temperature Pfot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit


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PDF PDTC143ZT 115002/00/03/pp8 PDTA143Z PDTC143Z PDTA143
Not Available

Abstract: No abstract text available
Text: resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC114ET. MARKING TYPE NUMBER PDTA114ET MARKING CODE«1) *03 PINNING PIN 1 2 3 DESCRIPTION base/input emitter/ground (+ , resistor-equipped transistor FEATURES · Built-in bias resistors R1 and R2 (typ. 10 k£2 each) · Simplification of , Philips S em iconductors Product specification PNP resistor-equipped transistor LIMITING VALUES In , dissipation storage temperature junction temperature operating ambient temperature Note 1. Transistor


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PDF PDTA114ET PDTC114ET. 115002/00/05/pp8
Not Available

Abstract: No abstract text available
Text: NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA143ET. MARKING TYPE NUMBER PDTC143ET MARKING CODE«1) *02 PINNING PIN 1 2 3 Note DESCRIPTION base/input , resistor-equipped transistor FEATURES · Built-in bias resistors R1 and R2 (typ. 4.7 k£2 each) · Simplification of , 2 Philips S em iconductors Product specification NPN resistor-equipped transistor , Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL R f h j


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PDF PDTC143ET PDTA143ET. 115002/00/04/pp8
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET PMBT4403 PNP switching transistor Product , Semiconductors Product specification PNP switching transistor FEATURES · High current (max. 600 mA) · Low , emitter collector PMBT4403 DESCRIPTION DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT4401. MARKING TYPE NUMBER PMBT4403 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. MARKING CODE«1) *2T Top 1 view MA M256 Fig. 1 Simplified outline


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PDF PMBT4403 PMBT4401. PMBT4403 115002/00/03/pp8
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT3904 NPN switching transistor Product , Semiconductors Product specification NPN switching transistor FEATURES · Low current (max. 100 mA) · Low , emitter collector PINNING PMBT3904 DESCRIPTION DESCRIPTION NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT3906. 3 _ 3 MARKING TYPE NUMBER PMBT3904 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig. 1 Simplified outline (SOT23) and symbol. MARKING CODE


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PDF PMBT3904 PMBT3906. PMBT3904 MAM255 115002/00/03/pp8
Not Available

Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBT3906 PNP switching transistor Product , Semiconductors Product specification PNP switching transistor FEATURES · Low current (max. 100 mA) · Low , base emitter collector PMBT3906 DESCRIPTION DESCRIPTION PNP switching transistor in a SOT23 plastic package. NPN complement: PMBT3904. MARKING TYPE NUMBER PMBT3906 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. Fig. 1 Simplified outline (SOT23) and symbol. MARKING CODE«1) *2A T o


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PDF PMBT3906 PMBT3904. PMBT3906 115002/00/03/pp8
Not Available

Abstract: No abstract text available
Text: purpose transistor FEATURES · Low current (max. 100 mA) · Low voltage (max. 40 V). PINNING PIN 1 2 , equipment. 3 base emitter collector PMBS3906 DESCRIPTION DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: PMBS3904. 3 MARKING 1 2 MA M256 2 TYPE NUMBER PMBS3906 Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. MARKING CODE«1) *0 6 Top view Fig , S em iconductors Product specification PNP general purpose transistor THERMAL CHARACTERISTICS


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PDF PMBS3906 PMBS3904. PMBS3906 115002/00/04/pp8
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