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Part Manufacturer Description Datasheet Download Buy Part
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR SMD 13W Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - TRANSISTOR SMD 13W

Abstract: CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL
Text: description is given of a 13W electronic CFL ballast ( SMD demo board PR38922 and leaded demo board PR39001), which is able to drive a standard Philips PLC 13W and similar lamps. The ballast is based on a Voltage , APPLICATION NOTE CFL 13W demo PCB with UBA2021 for integrated lamp-ballast designs AN99066 (replaces previous version AN98091) Philips Semiconductors Philips Semiconductors CFL 13W demo , - or other industrial or intellectual property rights. 2 Philips Semiconductors CFL 13W demo


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PDF UBA2021 AN99066 AN98091) PR38922 PR39001) 230Vrms PHU2N60 PHU2N50) TRANSISTOR SMD 13W CFL inverter circuit schematic diagram 230v CFL circuit diagram cfl circuit diagram cfl ballast philips cfl 13W 13w cfl circuit led lamp 230v circuit diagram schematic lamp ballast BALLAST CFL
68w Transistor smd

Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL kd smd transistor relay 12v 1c/o SGR642H
Text: Hermetic SMD PCB 85ºC Hermetic PCB 12.5 x 7.5 x 10 16.0 x 11.0 x 11.5 20.2 x 10 x 10.6 , , Alternate Pin Out Transistor Driver Willow Technologies Limited, Shawlands Court, Newchapel Rd , transient suppresion Transistor Driver, Metal Housing, Custom, Diode for coil mercury wetted , PCB 80ºC Random PCB 90ºC, 100ºC Zero Cross PCB 85ºC 85ºC PCB, SMD PCB, SMD , 1000Gohm 85ºC 85ºC 100ºC 100ºC 100ºC 85ºC 70ºC 70ºC PCB PCB, SMD PCB


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PDF HG4100 HG4516 HG4507 HG4078B SGR46G 125VAC 60VDC 150VDC 24VDC 68w Transistor smd bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL kd smd transistor relay 12v 1c/o SGR642H
1998 - Zener Diode 3v 400mW

Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Text: RF Wideband Transistor Selection Guide 791-180 UMA1021M Low-Voltage Frequency Synthesizer for , drive circuit would allow a lower voltage transistor , Q1, and capacitor, Cd, to be used. Base-emitter , Typical Application: 15 RF Wideband Transistor Selection Guide 16 RF Wideband Transistor


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PDF DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF BU2520AF 16kHz BY328 Zener Diode 3v 400mW transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
2009 - Not Available

Abstract: No abstract text available
Text: PH2729-8.5M Radar Pulsed Power Transistor 8.5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty M/A-COM , Thermal Resistance Vcc = 36V, Pin = 1.3W F = 2.7, 2.8, 2.9 GHz RTH(JC) - 2.2 °C/W Output Power Vcc = 36V, Pin = 1.3W F = 2.7, 2.8, 2.9 GHz POUT 8.5 - W Power Gain Vcc = 36V, Pin = 1.3W F = 2.7, 2.8, 2.9 GHz GP 8.15 - dB Collector Efficiency Vcc = 36V, Pin = 1.3W F = 2.7, 2.8, 2.9 GHz C 35 - % Pulse Droop Vcc = 36V, Pin =


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PDF PH2729-8
2003 - H11S

Abstract: RA13H8891MA RA13H8891MA-01 RA13H8891MA-E01
Text: Thermal Design of the Heat Sink: At Pout= 13W , VDD=12.5V and Pin=200mW each stage transistor operating , RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13 , Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 · Pout> 13W , T>30% @ VDD=12.5V, VGG=5V, Pin , =15.2V, Pin=200mW, Pout= 13W (VGG control), Load VSWR=20:1 mA No parasitic oscillation - No , T @Pout= 13W 10 40 5 20 in @Pout= 13W 0 875 0 885 895 905 FREQUENCY f(MHz


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PDF RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz H11S RA13H8891MA-01 RA13H8891MA-E01
2007 - transistor 13w

Abstract: No abstract text available
Text: PH2729-8.5M Radar Pulsed Power Transistor 8.5W, 2.7-2.9 GHz, 100µs Pulse, 10% Duty Features · · , Load Mismatch Stability VCE = 40V Vcc = 36V, Pin = 1.3W Vcc = 36V, Pin = 1.3W Vcc = 36V, Pin = 1.3W Vcc = 36V, Pin = 1.3W Vcc = 36V, Pin = 1.3W Vcc = 36V, Pin = 1.3W Vcc = 36V, Pin = 1.3W Vcc = 36V, Pin = 1.3W C Droop RL VSWR-T VSWR-S 1 ADVANCED: Data Sheets contain information regarding a product M , contained herein without notice. PH2729-8.5M Radar Pulsed Power Transistor 8.5W, 2.7-2.9 GHz, 100µs


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PDF PH2729-8 transistor 13w
2007 - Not Available

Abstract: No abstract text available
Text: PH1214-80M Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Features · · · , 40V Vcc = 40V, Pin = 13W Vcc = 40V, Pin = 13W Vcc = 40V, Pin = 13W Vcc = 40V, Pin = 13W Vcc = 40V, Pin = 13W Vcc = 40V, Pin = 13W Vcc = 40V, Pin = 13W C RL VSWR-T VSWR-S 1 ADVANCED: Data Sheets , Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Typical RF , contained herein without notice. PH1214-80M Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse


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PDF PH1214-80M
2001 - AAAG

Abstract: AAAK making aaaj MAX1806EUA08 MAX1806EUA15 MAX1806EUA MAX1806EUA25 MAX1806EUA33 MAX1806 MAX1806EUA18
Text: with 0.8V Output Fits in 1.3W µ MAX Package FOR PRODUCT RELATED INFORMATION CONTACT THE BUSINESS , transistor allows low 210µA supply current, making this device ideal for portable equipment such as personal , protection. The MAX1806 comes in a miniature 1.3W , 8-pin power-µMAX package with a metal pad on the , internal PMOS pass transistor allows low 210µA supply current, making this device ideal for portable , thermal shutdown protection. The MAX1806 comes in a miniature 1.3W , 8-pin power-µMAX package with a


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PDF MAX1806 500mA MAX1806 175mV AAAG AAAK making aaaj MAX1806EUA08 MAX1806EUA15 MAX1806EUA MAX1806EUA25 MAX1806EUA33 MAX1806EUA18
2006 - RA13H8891MA-101

Abstract: RA13H8891MA
Text: Pout= 13W , VDD=12.5V and Pin=200mW each stage transistor operating conditions are: Pin IDD @ T , RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The , (VGG), Power Control Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 · Pout> 13W , T>30% @ , ), Load VSWR=3:1 VDD=15.2V, Pin=200mW, Pout= 13W (VGG control), Load VSWR=20:1 mA No parasitic , VDD=12.5V Pin=200mW 20 -30 80 15 60 T @Pout= 13W 10 40 5 20 in


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PDF RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz RA13H8891MA-101
2008 - Not Available

Abstract: No abstract text available
Text: Part Number: Integra IB2226M80 (Preliminary) TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2226M80 , , DF=DF1. PW=PW1, DF=DF1, TF=25°C. Vcc= tbd V, PW=200µs, DF=10%, TF=30±5°C, PIN= 13W , F , =30±5°C, PIN= 13W , F=2.25-2.40-2.55GHz. Screen 'BD' = parameter qualified By Design. PROCESSING , =16.4W - Vcc=38 V, PW=200µs, DF=10%, TF=30±5°C, PIN= 13W , F=2.25-2.40-2.55GHz. Rotate 2:1 output VSWR


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PDF IB2226M80 IB2226M80 IB2226M80-REV-PR1-DS-REV-NC
2009 - PH1214-80M

Abstract: No abstract text available
Text: PH1214-80M Radar Pulsed Power Transistor 80W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM , Thermal Resistance Vcc = 40V, Pin = 13W F = 1.2, 1.3, 1.4 GHz RTH(JC) - 0.8 °C/W Output Power Vcc = 40V, Pin = 13W F = 1.2, 1.3, 1.4 GHz POUT 80 - W Power Gain Vcc = 40V, Pin = 13W F = 1.2, 1.3, 1.4 GHz GP 7.9 - dB Collector Efficiency Vcc = 40V, Pin = 13W F = 1.2, 1.3, 1.4 GHz C 50 - % Input Return Loss Vcc = 40V, Pin =


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PDF PH1214-80M PH1214-80M
M57744

Abstract: No abstract text available
Text: , 12.5V, 13W , FM MOBILE RADIO O U T U N E DRAWING Dimensions in mm BLOCK DIAGRAM © H r- Iâ , - - MITSUBISHI RF POWER MODULE Gül7a03 2 flM M57744 889-915MHz, 12.5V, 13W , FM MOBILE , 5 ^ 0017204 110 ■MITSUBISHI RF POWER MODULE M57744 889-915MHz, 12.5V, 13W , FM MOBILE , the o u tp u t power o f 13W below 90°C. 1. Junction temperature of incorporated transis­ tors , transistor ,h(° ' a) c) Final stage transistor Rth (;— )3 = 2.5°C/W (Typ.) c (2) Junction


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PDF M57744 889-915MHz, M57744
transistor p02

Abstract: M57704M transistor 60 13w p02 transistor
Text: MITSUBISHI RF POWER MODULE M57704M 430-450MHz, 12.5V, 13W , FM MOBILE RADIO OUTLINE DRAWING , M57704M 430-450MHZ, 12.5V, 13W , FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER TOTAL EFFICIENCY , 430-450MHZ, 12.5V, 13W , FM MOBILE RADIO DESIGN CONSIDERATION OF HEAT RADIATION Please refer to following , transistor Rth(j-e)i = 15°C/W (Typ.) b) Second stage transistor Rth(j-c)2 =6°C/W (Typ.) c) Final stage transistor Rth(i-C)3 =2.5°C/W (Typ.) (2) Junction temperature of incorporated transistors at standard


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PDF M57704M 430-450MHz, transistor p02 M57704M transistor 60 13w p02 transistor
2011 - Not Available

Abstract: No abstract text available
Text: the Heat Sink: At Pout= 13W , VDD=12.5V and Pin=200mW each stage transistor operating conditions are , RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 , electronic Ceramic parts. RA13H8891MA-101 3 4 P > 13W , T>30% @ VDD=12.5V, VGG=5V, Pin , RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase , =15.2V, Pin=200mW, Pout= 13W (VGG control), Load VSWR=20:1 All parameters, conditions, ratings, and limits


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PDF RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz
2004 - RA13H8891MA

Abstract: RA13H8891MA-01
Text: Thermal Design of the Heat Sink: At Pout= 13W , VDD=12.5V and Pin=200mW each stage transistor operating , RA13H8891MA 889-915MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H8891MA is a 13 , Drain Voltage (VDD), Battery 4 RF Output (Pout) 5 · Pout> 13W , T>30% @ VDD=12.5V, VGG=5V, Pin , =10.0-15.2V, Pin=100-300mW, Pout=1 to 20W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=200mW, Pout= 13W (VGG , FREQUENCY 100 VDD=12.5V Pin=200mW 20 -30 80 15 60 T @Pout= 13W 10 40 5 20


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PDF RA13H8891MA 889-915MHz RA13H8891MA 13-watt 915-MHz RA13H8891MA-01
2011 - RF MODULE 435Mhz

Abstract: MOSFET MODULE - 400-470MHz
Text: Design of the Heat Sink: At Pout= 13W , VDD=12.5V and Pin=50mW each stage transistor operating conditions , the input power. FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout> 13W , .Lead in electronic Ceramic parts. BLOCK DIAGRAM 2 3 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE , Power Modules > RA13H4047M RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO , VSWR=3:1 VDD=15.2V, Pin=50mW, Pout= 13W (VGG control), Load VSWR=20:1 No parasitic oscillation No


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PDF RA13H4047M RA13H4047M 13-watt 470-MHz RF MODULE 435Mhz MOSFET MODULE - 400-470MHz
Not Available

Abstract: No abstract text available
Text: , 12.5V, 13W , FM MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dim ensions in m m 56 ± 1 50 ± 1 , 7TS ) M57747 144-148MHZ, 12.5V, 13W , FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT POWER , M57747 144-148MHZ, 12.5V, 13W , FM MOBILE RADIO DESIGN CONSIDERATION OF HEAT RADIATION 2. Please , transistors ( 1) of 13W below 9 0 < C. at standard operation. The thermal resistance Rth(c-a)(5 , : incorporated transistors. _ Tc - T ._9 0 - 6 0 a) First stage transistor Rth


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PDF M57747 144-148MHZ,
Not Available

Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57747 144-148MHz, 12.5V, 13W , FM MOBILE RADIO BLOCK DIAGRAM  , MITSUBISHI RF POWER MODULE M57747 144-148MHz, 12.5V, 13W , FM MOBILE RADIO TYPICAL PERFORMANCE DATA , I E L E C T R IC 14 MITSUBISHI RF POWER MODULE M57747 144-148MHZ, 12.5V, 13W , FM MOBILE , and package of this : of 13W below 9 0 ‘C. incorporated transistors. Tc - T» a) First stage transistor Rth(j-c)! = lO'C/WCTyp.) = 2.8CC/W) b) Final stage transistor Rth(j-c)2 =


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PDF M57747 144-148MHz,
2011 - MARKING CODE 13w

Abstract: 13W MARKING
Text: < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp , =0V) PACKAGE CODE: H11S · Pout> 13W , T>35% @ VDD=12.5V, VGG=5V, Pin=1mW · Broadband Frequency Range: 880-915MHz , Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W 12.5V, 3 Stage Amp. For MOBILE RADIO , VSWR=3:1 VDD=15.2V, Pin=1mW, Pout= 13W (VGG control), Load VSWR=20:1 No parasitic oscillation No , . Publication Date : Oct2011 2 < Silicon RF Power Modules > RA13H8891MB RoHS Compliance, 880-915MHz 13W


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PDF RA13H8891MB 880-915MHz RA13H8891MB 13-watt 915-MHz Oct2011 MARKING CODE 13w 13W MARKING
Not Available

Abstract: No abstract text available
Text: 430-450MHZ, 12.5V, 13W , FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM © —I , 430-450MHZ, 12.5V, 13W , FM MOBILE RADIO TYPICAL PERFORMANCE DATA O U T P U T P O W E R TO TAL E F F IC IE , MODULE ■ô s ■î M57704M 430-450MHZ, 12.5V, 13W , FM MOBILE RADIO DESIGN CONSIDERATION OF , ju n ctio n and package o f incorporated transistors. a) First stage transistor R th U -d i = 15°C/W (Typ.) b) Second stage transistor R th (i-c )2 = 6 ° c /w (Typ.) c) Final stage transistor


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PDF 1710b M57704M 430-450MHZ,
2011 - 13w marking code

Abstract: Code 13w marking code 13W MOSFET Power Amplifier Module 900Mhz rf MARKING "13W"
Text: Design of the Heat Sink: At Pout= 13W , VDD=12.5V and Pin=200mW each stage transistor operating , the input power. FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout> 13W , .Lead in electronic Ceramic parts. BLOCK DIAGRAM 2 3 889-915MHz 13W 12.5V, 2 Stage Amp. For , RA13H8891MA RoHS Compliance , 889-915MHz 13W 12.5V, 2 Stage Amp. For , =100-300mW, Pout=1 to 20W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=200mW, Pout= 13W (VGG control), Load VSWR=20:1


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PDF RA13H8891MA RA13H8891MA 13-watt 915-MHz 13w marking code Code 13w marking code 13W MOSFET Power Amplifier Module 900Mhz rf MARKING "13W"
transistor tc 144

Abstract: M57747 Mitsubishi transistor rf final Transistor - CL 100 rf transistor s parameters
Text: MITSUBISHI RF POWER MODULE M57747 144-148MHz, 12.5V, 13W , FM MOBILE RADIO OUTLINE DRAWING , MITSUBISHI RF POWER MODULE M57747 144-148MHz, 12.5V, 13W , FM MOBILE RADIO TYPICAL PERFORMANCE DATA OUTPUT , MITSUBISHI RF POWER MODULE M57747 144-148MHZ, 12.5V, 13W , FM MOBILE RADIO DESIGN CONSIDERATION OF HEAT , incorporated transistors. a) First stage transistor Rth(j-c)i = 10"C/W(Typ.) b) Final stage transistor Rth , €¢ Conditions for standard operation. Po = 13W , Vcc = 12.5V, Pin = 0.2W, 7?T = 48 % (minimum rating). p0,


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PDF M57747 144-148MHz, 113X1, transistor tc 144 M57747 Mitsubishi transistor rf final Transistor - CL 100 rf transistor s parameters
2011 - 741C op amp

Abstract: C741C 741C DC CHARACTERISTICS 13w marking code
Text: transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout= 13W , VDD , the input power. FEATURES · Enhancement-Mode MOSFET Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout> 13W , . BLOCK DIAGRAM 2 3 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO 1 4 5 1 2 3 4 5 , > RA13H1317M RoHS Compliance , 135-175MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase , control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout= 13W (VGG control), Load VSWR=20:1 40 - Harmonic


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PDF RA13H1317M RA13H1317M 13-watt 175-MHz 741C op amp C741C 741C DC CHARACTERISTICS 13w marking code
2011 - 13W MARKING

Abstract: No abstract text available
Text: Design of the Heat Sink: At Pout= 13W , VDD=12.5V and Pin=50mW each stage transistor operating conditions , RA13H3340M RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For , Transistors (IDD0 @ VDD=12.5V, VGG=0V) · Pout> 13W , T>40% @ VDD=12.5V, VGG=5V, Pin=50mW · Broadband Frequency , > RA13H3340M RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO MAXIMUM RATINGS (Tcase , =25-70mW, Stability Pout<20W (VGG control), Load VSWR=3:1 VDD=15.2V, Pin=50mW, Pout= 13W (VGG control), No parasitic


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PDF RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz 13W MARKING
Not Available

Abstract: No abstract text available
Text: MITSUBISHI RF POWER MODULE M57704M 430-450MHz, 12.5V, 13W , FM MOBILE RADIO (D Pin ©VCCI ® VC , ELECTRIC MITSUBISHI RF POWER MODULE M57704M 430-450MHZ, 12.5V, 13W , FM MOBILE RADIO TYPICAL , ) MITSUBISHI RF POWER MODULE M57704M 430-450MHZ, 12.5V, 13W , PM MOBILE RADIO DESIGN CONSIDERATION OF , operating am bient tem perature (no rm ally T a = 60°C ) and at the o u tp u t power o f 13W below 90°C. The , incorporated transistors. a) F irst stage transistor R t h ( ] - c ) i = 15°C/W (T yp.) b) Second stage


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PDF M57704M 430-450MHz,
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