The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS

TRANSISTOR LWW 31 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - TRANSISTOR AS3

Abstract: TRANSISTOR LWW 20 transistor code AS3 On semiconductor date Code sot-223 AS3 SOT223 as3 Transistor transistor code LWW FR4 GLASS EPOXY AS3 MARKING TRANSISTOR LWW 40
Text: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power , Complement is BSP62T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR COLLECTOR 2,4 , Assembly Location = Date Code = Specific Device Code LWW AS3 1. Device mounted on a FR-4 glass epoxy


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PDF BSP52T1 OT-223 BSP52T1 inch/1000 BSP62T1 TRANSISTOR AS3 TRANSISTOR LWW 20 transistor code AS3 On semiconductor date Code sot-223 AS3 SOT223 as3 Transistor transistor code LWW FR4 GLASS EPOXY AS3 MARKING TRANSISTOR LWW 40
2001 - TRANSISTOR LWW 20

Abstract: onsemi SOT-223 BSP52T1 BSP62T1 SMD310 transistor code AS3
Text: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power , http://onsemi.com MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR COLLECTOR 2,4 , Soldering Purposes Time in Solder Bath LWW AS3 L WW AS3 1. Device mounted on a FR-4 glass epoxy


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PDF BSP52T1 OT-223 BSP52T1 inch/1000 BSP62T1 r14525 BSP52T1/D TRANSISTOR LWW 20 onsemi SOT-223 BSP62T1 SMD310 transistor code AS3
2001 - TRANSISTOR LWW 20

Abstract: transistor code AS3 BSP52T1 aS3 DPAK On semiconductor date Code sot-223 TRANSISTOR LWW 23 BSP62T1 SMD310 TRANSISTOR AS3
Text: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power , http://onsemi.com MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR COLLECTOR 2,4 , Soldering Purposes Time in Solder Bath LWW AS3 L WW AS3 1. Device mounted on a FR-4 glass epoxy


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PDF BSP52T1 OT-223 BSP52T1 inch/1000 BSP62T1 r14525 BSP52T1/D TRANSISTOR LWW 20 transistor code AS3 aS3 DPAK On semiconductor date Code sot-223 TRANSISTOR LWW 23 BSP62T1 SMD310 TRANSISTOR AS3
2006 - TRANSISTOR LWW 24

Abstract: marking codes transistors sot-223 5p03h TRANSISTOR LWW 31 dts circuit board TRANSISTOR LWW 17 ultra fast recovery time diode 318E-04 Amp. mosfet 800 watt soft start motor control diagram
Text: LWW 3 L WW = Location Code = Work Week PIN ASSIGNMENT 4 Drain 1 2 Gate , 3.1 V 2 VDS 10 V 8 6 4 TJ = 100°C 2 25°C 2.7 V 0 0 0.4 0.8 1.2 , current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak , , the stored energy from circuit inductance dissipated in the transistor while in avalanche must be


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PDF MMFT5P03HD OT-223 MMFT5P03HD MMFT5P03HD/D TRANSISTOR LWW 24 marking codes transistors sot-223 5p03h TRANSISTOR LWW 31 dts circuit board TRANSISTOR LWW 17 ultra fast recovery time diode 318E-04 Amp. mosfet 800 watt soft start motor control diagram
2000 - 5P03H

Abstract: TRANSISTOR LWW 24 TRANSISTOR LWW 43 TRANSISTOR LWW 17 Power MOSFET SOT-223 TRANSISTOR LWW 20 AN569 MMFT5P03HD MMFT5P03HDT3 TRANSISTOR LWW 31
Text: LWW 3 L WW = Location Code = Work Week PIN ASSIGNMENT 4 Drain 1 Gate 2 , 3.9 V 3.7 V 4 3.5 V 3.3 V 3.1 V 2 VDS 10 V 8 6 4 TJ = 100°C 2 2.7 V 0 , dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for , transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction


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PDF MMFT5P03HD MMFT5P03HD r14525 MMFT5P03HD/D 5P03H TRANSISTOR LWW 24 TRANSISTOR LWW 43 TRANSISTOR LWW 17 Power MOSFET SOT-223 TRANSISTOR LWW 20 AN569 MMFT5P03HDT3 TRANSISTOR LWW 31
2002 - TRANSISTOR LWW 20

Abstract: a8811 rt 8800b TRANSISTOR SOT-23 marking JE TRANSISTOR LWW 31 8800S 0c sot-89 O A B C sot-89 TRANSISTOR D 2627 TRANSISTOR LWW 17
Text: O C A M E 8800IE E T A E Lww 3.4V S OT-23 -40 O C to + 85 O C A M E 8800JE E T , AME8800/8811 family of CMOS regulators contain a PMOS pass transistor , voltage reference, error amplifier , , high capacitance, and low overall cost. The P-channel pass transistor receives data from the error , 31 30 29 28 27 -45 -5 25 55 210 200 V OUT= 3 V 190 180 170 160 150 -45


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PDF AME8800 300mA AME8800/8811 OT-23, OT-25, OT-89 2006-DS8800/8811-F TRANSISTOR LWW 20 a8811 rt 8800b TRANSISTOR SOT-23 marking JE TRANSISTOR LWW 31 8800S 0c sot-89 O A B C sot-89 TRANSISTOR D 2627 TRANSISTOR LWW 17
2006 - TRANSISTOR LWW 21

Abstract: TRANSISTOR LWW 24 TRANSISTOR LWW 17 TRANSISTOR LWW 18 MMFT3055VL TRANSISTOR LWW 20 tr/TRANSISTOR LWW 24
Text: -261AA CASE 318E STYLE 3 TBD LWW 3 L WW = Location Code = Work Week PIN ASSIGNMENT 4 Drain , Area curves define the maximum simultaneous drain-to-source voltage and drain current that a transistor , dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating


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PDF MMFT3055VL OT-223 MMFT3055VL/D TRANSISTOR LWW 21 TRANSISTOR LWW 24 TRANSISTOR LWW 17 TRANSISTOR LWW 18 TRANSISTOR LWW 20 tr/TRANSISTOR LWW 24
2000 - TRANSISTOR LWW 20

Abstract: TRANSISTOR LWW 17 TRANSISTOR LWW 21 AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3
Text: /°C ­55 to 175 °C EAS 2 TO­261AA CASE 318E STYLE 3 TBD LWW 3 L WW = , energy from circuit inductance dissipated in the transistor while in avalanche must be less than the , drain­to­source voltage and drain current that a transistor can handle safely when it is forward biased. Curves


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PDF MMFT3055V r14525 MMFT3055V/D TRANSISTOR LWW 20 TRANSISTOR LWW 17 TRANSISTOR LWW 21 AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3
2000 - MMFT3055VLT1

Abstract: TRANSISTOR LWW 21 TRANSISTOR LWW 17 MMFT3055VLT3 TRANSISTOR LWW 20 MMFT3055VL AN569
Text: /°C ­55 to 175 °C EAS 2 TO­261AA CASE 318E STYLE 3 TBD LWW 3 L WW = , dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating , transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction


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PDF MMFT3055VL r14525 MMFT3055VL/D MMFT3055VLT1 TRANSISTOR LWW 21 TRANSISTOR LWW 17 MMFT3055VLT3 TRANSISTOR LWW 20 MMFT3055VL AN569
2000 - TRANSISTOR LWW 21

Abstract: MMFT3055VL TRANSISTOR LWW 20
Text: 2 3 TO­261AA CASE 318E STYLE 3 TBD LWW mW/°C °C mJ ­55 to 175 L WW = Location Code , Area curves define the maximum simultaneous drain­to­source voltage and drain current that a transistor , dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating


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PDF MMFT3055VL MMFT3055VLT1 MMFT3055VLT3 318E-04 OT-223 O-261) TRANSISTOR LWW 21 TRANSISTOR LWW 20
2008 - TRANSISTOR LWW 2O

Abstract: transistor l1w TRANSISTOR LWW 20 MAX667 54IH MAX666 MAX667CPA MAX667CSA MAX667EPA MAX667ESA
Text: FUNCTION DD Dropout Detector Output-the collector of a PNP pass transistor . Normally an open , . Low-Battery Output. An open-drain Nchannel transistor that sinks current to GND when LBI is less than 1.22V , reference, an error amplifier, a PNP pass transistor , and two comparators as the main elements of the , , that changes as the dropout voltage approaches its limit. DD is an open collector of a PNP transistor , output transistor . When the input voltage falls below the desired output voltage, the


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PDF MAX667 250mA 200mA 150mV. MAX667 TRANSISTOR LWW 2O transistor l1w TRANSISTOR LWW 20 54IH MAX666 MAX667CPA MAX667CSA MAX667EPA MAX667ESA
2000 - 5p03h

Abstract: TRANSISTOR LWW 21 ultra low level FET TO-236 sot363 ON Marking DS to247 pcb footprint TRANSISTOR LWW 20
Text: ) = 100 m P­Channel D G S MARKING DIAGRAM 4 TO­261AA CASE 318E STYLE 3 5P03H LWW L , 8V 6V TJ = 25°C 4.5 V 4.3 V 4.1 V 3.9 V 3.7 V 3.5 V 3.3 V 3.1 V 2.7 V VDS 10 V 25°C 0 , Area curves define the maximum simultaneous drain­to­source voltage and drain current that a transistor , dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for , 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800


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PDF MMFT5P03HD MMFT5P03HD 5p03h TRANSISTOR LWW 21 ultra low level FET TO-236 sot363 ON Marking DS to247 pcb footprint TRANSISTOR LWW 20
2000 - TRANSISTOR LWW 20

Abstract: TRANSISTOR LWW 17
Text: 3.5 V 3.7 V 3.3 V TJ = 25°C 3.1 V 2.9 V 2.7 V 2.5 V 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 4 , the maximum simultaneous drain-to-source voltage and drain current that a transistor can handle safely , max. reliable operation, the stored energy from circuit inductance dissipated in the transistor , 318E STYLE 3 FT960 LWW 3 FT960 L WW = Device Code = Location Code = Work Week 1. Device


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PDF MMDF3N02HD TRANSISTOR LWW 20 TRANSISTOR LWW 17
2000 - TRANSISTOR LWW 20

Abstract: TRANSISTOR LWW 24 marking MH TSSOP8
Text: ­261AA CASE 318E STYLE 3 TBD LWW mW/°C °C mJ ­55 to 175 L WW = Location Code = Work Week PIN , Area curves define the maximum simultaneous drain­to­source voltage and drain current that a transistor , dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating , 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1 6.5 2.8 3.2 INCHES MIN MAX 1.102 1.142 0.760 0.800


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PDF MMFT3055V TRANSISTOR LWW 20 TRANSISTOR LWW 24 marking MH TSSOP8
2000 - MMFT3055VL

Abstract: TRANSISTOR LWW 21 TRANSISTOR LWW 43 TRANSISTOR LWW 20
Text: 2 3 TO­261AA CASE 318E STYLE 3 TBD LWW mW/°C °C mJ ­55 to 175 L WW = Location Code , drain­to­source voltage and drain current that a transistor can handle safely when it is forward biased. Curves , operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be , 1.9 2.1 2.2 2.4 5.45 BSC 2.6 3.0 0.43 0.78 17.6 18.8 11.0 11.4 3.95 4.75 2.2 2.6 3.1 3.5 2.15 2.35 6.1


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PDF MMFT3055VL TRANSISTOR LWW 21 TRANSISTOR LWW 43 TRANSISTOR LWW 20
Not Available

Abstract: No abstract text available
Text: Hold Time 20 - ns lWW WP High to WE Falling Edge 100 - ns tRR Ready to RE , are activated so that the transistor array is connected to the bit line and disconnected from the , applied to the unselected word lines. (3) The bit line tied to cell transistor TR1 is biased to 0V and , transistor as shown in Figure 20. The threshold voltage of a transistor with “0” data falls within the “plus” distribution while the threshold voltage of a transistor with “1” data falls within the


OCR Scan
PDF TC5816ADC 16Mbit TC5816 NV16030496
2001 - Not Available

Abstract: No abstract text available
Text: low VCEsat NPN/PNP transistor NOTES PBSS2515VPN 2001 Aug 31 11 Philips Semiconductors ­ , DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCEsat NPN/PNP transistor Preliminary specification 2001 Aug 31 Philips Semiconductors Preliminary specification 15 V low VCEsat NPN/PNP transistor FEATURES · 300 mW total power dissipation · Very small 1.6 x 1.2 mm ultra thin , 5 4 TR2 TR1 DESCRIPTION NPN/PNP low VCEsat transistor pair in a SOT666 plastic package


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PDF M3D744 PBSS2515VPN SC75/SC89 SCA73 613514/1000/01/pp12
2003 - PCF7952

Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Text: transistor 934021580699 T C 3 30-sep-04 31 -dec-04 2N3906 Standard Discontinuation. See , 2PB709AR PNP general purpose transistor 934026650185 N M 3 30-jun-04 31 , transistor 934026650195 N M 3 30-jun-04 31 -dec-04 2PB709AR Standard Discontinuation. See , 2PB710AS PNP general purpose transistor 934028620185 N M 3 30-jun-04 31 , transistor 934031760185 N M 3 30-jun-04 31 -dec-04 2PC4081R Standard Discontinuation. See


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PDF VP22480-3 VP22480-5 VP22530-2 PCF7952 pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
2014 - Not Available

Abstract: No abstract text available
Text: MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs , MAGX-003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse , -003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev , -003135-120L00 GaN on SiC HEMT Pulsed Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev , Power Transistor 120 W Peak, 3.1 to 3.5 GHz, 300 μs Pulse, 10% Duty Rev. V2 Typical Performance


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PDF MAGX-003135-120L00 EAR99 MAGX-003135-120L00
Not Available

Abstract: No abstract text available
Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10 , -003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 , -003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 , information contained herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak


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PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00
2009 - SMD PNP TRANSISTOR

Abstract: TRANSISTOR SMD MARKING CODES
Text: PMBT3946VPN 40 V, 200 mA NPN/PNP switching transistor Rev. 01 - 31 August 2009 Product data sheet 1. Product profile 1.1 General description NPN/PNP double switching transistor in a SOT666 , PNP/PNP complement PMBT3906VS 1.2 Features I Double general-purpose switching transistor I , transistor ; for the PNP transistor with negative polarity VCEO collector-emitter voltage IC open , PMBT3946VPN NXP Semiconductors 40 V, 200 mA NPN/PNP switching transistor 2. Pinning information


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PDF PMBT3946VPN OT666 OT666 PMBT3904VS PMBT3906VS PMBT3946VPN SMD PNP TRANSISTOR TRANSISTOR SMD MARKING CODES
2004 - OF4455

Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
Text: PNP general purpose transistor 934000080412 T M 3 31 -Dec-04 30-Jun-05 BC557B , purpose transistor 934000120126 T M 3 31 -Dec-04 30-Jun-05 BC547B Inactive part. See Replacement. 5 2PC945P NPN general purpose transistor 934000120412 T M 3 31 , BF420L NPN high-voltage transistor 934037420126 T M 3 31 -Dec-04 30-Jun-05 BF420 , transistor 934036860126 T M 3 31 -Dec-04 30-Jun-05 BF422 Inactive part. See


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PDF Code357A3 30-Jun-04 VY27357A3 OF4455 OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
2011 - MAGX-003135-120L00

Abstract: 003135 EAR99
Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10 , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak


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PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 003135
2011 - HEMT 36 ghz transistor

Abstract: No abstract text available
Text: MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10 , Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Absolute Maximum Ratings Table (1, 2, 3) Supply , Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Electrical Specifications: TC = 25 ± 5 , Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10% Duty Production V1 02 Dec 11 4 ADVANCED , herein without notice. MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak


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PDF MAGX-003135-120L00 300us EAR99 MAGX-003135-120L00 HEMT 36 ghz transistor
1997 - NPN planar RF transistor

Abstract: BFG10 SOT143 C9 XN-71 transistor K 2937
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10; BFG10/X NPN 2 GHz RF power transistor Product specification Supersedes data of 1995 Mar 07 File under Discrete Semiconductors, SC14 1995 Aug 31 Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10 , 2 emitter DESCRIPTION Fig.1 SOT143. MARKING NPN silicon planar epitaxial transistor , temperature at the soldering point of the collector pin. 1995 Aug 31 2 Philips Semiconductors


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PDF BFG10; BFG10/X BFG10 NPN planar RF transistor BFG10 SOT143 C9 XN-71 transistor K 2937
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