The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
TK2R4A08QM TK2R4A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 100 A, 0.00244 Ohm@10V, TO-220SIS
XPN1300ANC XPN1300ANC ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF)
TK155U65Z TK155U65Z ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.155 Ohm@10V, TOLL
TK6R9P08QM TK6R9P08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
XPW4R10ANB XPW4R10ANB ECAD Model Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 70 A, 0.0041 Ω@10V, DSOP Advance(WF)L
TK5R1A08QM TK5R1A08QM ECAD Model Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS

TRANSISTOR LWW 17 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2001 - TRANSISTOR AS3

Abstract: TRANSISTOR LWW 20 transistor code AS3 On semiconductor date Code sot-223 AS3 SOT223 as3 Transistor transistor code LWW FR4 GLASS EPOXY AS3 MARKING TRANSISTOR LWW 40
Text: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power , Complement is BSP62T1 MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR COLLECTOR 2,4 , Assembly Location = Date Code = Specific Device Code LWW AS3 1. Device mounted on a FR-4 glass epoxy


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PDF BSP52T1 OT-223 BSP52T1 inch/1000 BSP62T1 TRANSISTOR AS3 TRANSISTOR LWW 20 transistor code AS3 On semiconductor date Code sot-223 AS3 SOT223 as3 Transistor transistor code LWW FR4 GLASS EPOXY AS3 MARKING TRANSISTOR LWW 40
2001 - TRANSISTOR LWW 20

Abstract: onsemi SOT-223 BSP52T1 BSP62T1 SMD310 transistor code AS3
Text: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power , http://onsemi.com MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR COLLECTOR 2,4 , Soldering Purposes Time in Solder Bath LWW AS3 L WW AS3 1. Device mounted on a FR-4 glass epoxy


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PDF BSP52T1 OT-223 BSP52T1 inch/1000 BSP62T1 r14525 BSP52T1/D TRANSISTOR LWW 20 onsemi SOT-223 BSP62T1 SMD310 transistor code AS3
2001 - TRANSISTOR LWW 20

Abstract: transistor code AS3 BSP52T1 aS3 DPAK On semiconductor date Code sot-223 TRANSISTOR LWW 23 BSP62T1 SMD310 TRANSISTOR AS3
Text: BSP52T1 Preferred Device NPN Small-Signal Darlington Transistor This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the SOT-223 package, which is designed for medium power , http://onsemi.com MEDIUM POWER NPN SILICON SURFACE MOUNT DARLINGTON TRANSISTOR COLLECTOR 2,4 , Soldering Purposes Time in Solder Bath LWW AS3 L WW AS3 1. Device mounted on a FR-4 glass epoxy


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PDF BSP52T1 OT-223 BSP52T1 inch/1000 BSP62T1 r14525 BSP52T1/D TRANSISTOR LWW 20 transistor code AS3 aS3 DPAK On semiconductor date Code sot-223 TRANSISTOR LWW 23 BSP62T1 SMD310 TRANSISTOR AS3
2006 - TRANSISTOR LWW 24

Abstract: marking codes transistors sot-223 5p03h TRANSISTOR LWW 31 dts circuit board TRANSISTOR LWW 17 ultra fast recovery time diode 318E-04 Amp. mosfet 800 watt soft start motor control diagram
Text: LWW 3 L WW = Location Code = Work Week PIN ASSIGNMENT 4 Drain 1 2 Gate , - 55 110 td(off) - 30 60 tf - 40 80 QT - 17 24 Q1 - 1.7 - Q2 - 6.3 - Q3 - 4.6 - - - 1.1 0.89 1.5 - trr - , current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak , , the stored energy from circuit inductance dissipated in the transistor while in avalanche must be


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PDF MMFT5P03HD OT-223 MMFT5P03HD MMFT5P03HD/D TRANSISTOR LWW 24 marking codes transistors sot-223 5p03h TRANSISTOR LWW 31 dts circuit board TRANSISTOR LWW 17 ultra fast recovery time diode 318E-04 Amp. mosfet 800 watt soft start motor control diagram
2006 - TRANSISTOR LWW 21

Abstract: TRANSISTOR LWW 24 TRANSISTOR LWW 17 TRANSISTOR LWW 18 MMFT3055VL TRANSISTOR LWW 20 tr/TRANSISTOR LWW 24
Text: case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID Value 60 60 ± 15 ± 20 1.5 1.2 5.0 2.1 1.7 0.94 6.3 , -261AA CASE 318E STYLE 3 TBD LWW 3 L WW = Location Code = Work Week PIN ASSIGNMENT 4 Drain , Area curves define the maximum simultaneous drain-to-source voltage and drain current that a transistor , dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating , shown in Figure 17 . http://onsemi.com 7 MMFT3055VL 160 R JA, Thermal Resistance, Junction to


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PDF MMFT3055VL OT-223 MMFT3055VL/D TRANSISTOR LWW 21 TRANSISTOR LWW 24 TRANSISTOR LWW 17 TRANSISTOR LWW 18 TRANSISTOR LWW 20 tr/TRANSISTOR LWW 24
2000 - 5P03H

Abstract: TRANSISTOR LWW 24 TRANSISTOR LWW 43 TRANSISTOR LWW 17 Power MOSFET SOT-223 TRANSISTOR LWW 20 AN569 MMFT5P03HD MMFT5P03HDT3 TRANSISTOR LWW 31
Text: LWW 3 L WW = Location Code = Work Week PIN ASSIGNMENT 4 Drain 1 Gate 2 , ­ 40 80 QT ­ 17 24 Q1 ­ 1.7 ­ Q2 ­ 6.3 ­ Q3 ­ 4.6 , dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for , transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction


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PDF MMFT5P03HD MMFT5P03HD r14525 MMFT5P03HD/D 5P03H TRANSISTOR LWW 24 TRANSISTOR LWW 43 TRANSISTOR LWW 17 Power MOSFET SOT-223 TRANSISTOR LWW 20 AN569 MMFT5P03HDT3 TRANSISTOR LWW 31
2000 - TRANSISTOR LWW 20

Abstract: TRANSISTOR LWW 17 TRANSISTOR LWW 21 AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3
Text: Current ­ Single Pulse (tp 10 µs) ID ID IDM 1.7 1.4 6.0 Adc Total PD @ TA = 25°C mounted , case for 10 seconds G S MARKING DIAGRAM Apk 4 1.7 0.94 1 6.3 TJ, Tstg mW/°C ­55 to 175 °C EAS 2 TO­261AA CASE 318E STYLE 3 TBD LWW 3 L WW = , Vdc, ID = 0.85 Adc) (Cpk 2.0) (Note 3.) Drain­to­Source On­Voltage (VGS = 10 Vdc, ID = 1.7 Adc , Transconductance (VDS = 8.0 Vdc, ID = 1.7 Adc) Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output


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PDF MMFT3055V r14525 MMFT3055V/D TRANSISTOR LWW 20 TRANSISTOR LWW 17 TRANSISTOR LWW 21 AN569 MMFT3055V MMFT3055VT1 MMFT3055VT3
2002 - TRANSISTOR LWW 20

Abstract: a8811 rt 8800b TRANSISTOR SOT-23 marking JE TRANSISTOR LWW 31 8800S 0c sot-89 O A B C sot-89 TRANSISTOR D 2627 TRANSISTOR LWW 17
Text: O C A M E 8800IE E T A E Lww 3.4V S OT-23 -40 O C to + 85 O C A M E 8800JE E T , AME8800/8811 family of CMOS regulators contain a PMOS pass transistor , voltage reference, error amplifier , , high capacitance, and low overall cost. The P-channel pass transistor receives data from the error , 0 Temperature ( C) 17 AME, Inc. 300mA CMOS LDO AME8800 / 8811 n Package Dimension


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PDF AME8800 300mA AME8800/8811 OT-23, OT-25, OT-89 2006-DS8800/8811-F TRANSISTOR LWW 20 a8811 rt 8800b TRANSISTOR SOT-23 marking JE TRANSISTOR LWW 31 8800S 0c sot-89 O A B C sot-89 TRANSISTOR D 2627 TRANSISTOR LWW 17
2000 - MMFT3055VLT1

Abstract: TRANSISTOR LWW 21 TRANSISTOR LWW 17 MMFT3055VLT3 TRANSISTOR LWW 20 MMFT3055VL AN569
Text: case for 10 seconds G S MARKING DIAGRAM Apk 4 1.7 0.94 1 6.3 TJ, Tstg mW/°C ­55 to 175 °C EAS 2 TO­261AA CASE 318E STYLE 3 TBD LWW 3 L WW = , dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating , transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction , mount technology. A graph of RJA versus drain pad area is shown in Figure 17 . TJ(max) ­ TA RJA


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PDF MMFT3055VL r14525 MMFT3055VL/D MMFT3055VLT1 TRANSISTOR LWW 21 TRANSISTOR LWW 17 MMFT3055VLT3 TRANSISTOR LWW 20 MMFT3055VL AN569
2000 - TRANSISTOR LWW 21

Abstract: MMFT3055VL TRANSISTOR LWW 20
Text: case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ± 15 ± 20 1.5 1.2 5.0 2.1 1.7 , 2 3 TO­261AA CASE 318E STYLE 3 TBD LWW mW/°C °C mJ ­55 to 175 L WW = Location Code , Area curves define the maximum simultaneous drain­to­source voltage and drain current that a transistor , dissipated in the transistor while in avalanche must be less than the rated limit and adjusted for operating , of RJA versus drain pad area is shown in Figure 17 . http://onsemi.com 7 MMFT3055VL 160 R JA


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PDF MMFT3055VL MMFT3055VLT1 MMFT3055VLT3 318E-04 OT-223 O-261) TRANSISTOR LWW 21 TRANSISTOR LWW 20
2008 - TRANSISTOR LWW 2O

Abstract: transistor l1w TRANSISTOR LWW 20 MAX667 54IH MAX666 MAX667CPA MAX667CSA MAX667EPA MAX667ESA
Text: )@@@@@@@@@? ? L@@@&W?W ? ?@@@@@@7J? ?X)@@@@@@@@? ? 1@@@@@@@@@@7 ? K6@@@@@@@@@@@@@@@? ?@@@@@@J X)@@@@@@ , FUNCTION DD Dropout Detector Output-the collector of a PNP pass transistor . Normally an open , . Low-Battery Output. An open-drain Nchannel transistor that sinks current to GND when LBI is less than 1.22V , reference, an error amplifier, a PNP pass transistor , and two comparators as the main elements of the , , that changes as the dropout voltage approaches its limit. DD is an open collector of a PNP transistor


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PDF MAX667 250mA 200mA 150mV. MAX667 TRANSISTOR LWW 2O transistor l1w TRANSISTOR LWW 20 54IH MAX666 MAX667CPA MAX667CSA MAX667EPA MAX667ESA
2000 - TRANSISTOR LWW 20

Abstract: TRANSISTOR LWW 24 marking MH TSSOP8
Text: seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ± 20 ± 25 1.7 1.4 6.0 2.1 1.7 0.94 6.3 TJ, Tstg , ­261AA CASE 318E STYLE 3 TBD LWW mW/°C °C mJ ­55 to 175 L WW = Location Code = Work Week PIN , (VGS = 10 Vdc, ID = 0.85 Adc) Drain­to­Source On­Voltage (VGS = 10 Vdc, ID = 1.7 Adc) (VGS = 10 Vdc, ID = 0.85 Adc, TJ = 150°C) Forward Transconductance (VDS = 8.0 Vdc, ID = 1.7 Adc) DYNAMIC , .) Turn­On Delay Time Rise Time Turn­Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 1.7 Adc, VGS =


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PDF MMFT3055V TRANSISTOR LWW 20 TRANSISTOR LWW 24 marking MH TSSOP8
2000 - TRANSISTOR LWW 20

Abstract: TRANSISTOR LWW 17
Text: 0.79 0.72 23 18 5.0 0.025 1.3 - - - - - µC Vdc ns - - - - - - - - - - - - 11 58 17 20 7.0 32 27 21 12.5 , the maximum simultaneous drain-to-source voltage and drain current that a transistor can handle safely , max. reliable operation, the stored energy from circuit inductance dissipated in the transistor , Volts mAdc Watts mW/°C °C 1 4 http://onsemi.com 300 mA 60 VOLTS RDS(on) = 1.7 W N-Channel D G , 318E STYLE 3 FT960 LWW 3 FT960 L WW = Device Code = Location Code = Work Week 1. Device


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PDF MMDF3N02HD TRANSISTOR LWW 20 TRANSISTOR LWW 17
Not Available

Abstract: No abstract text available
Text: / 0 5 . 8 I/O Port 17 NC 18 GND Ground Input 19 R/B Ready/Busy 20 21 , ) The TC5816 includes unusable blocks. Refer to notification ( 17 ) toward the end of this document. DC , Hold Time 20 - ns lWW WP High to WE Falling Edge 100 - ns tRR Ready to RE , ^□*17246 D D 2 t17D2 747 NV16030496 17 /38 TC5816ADC Device Operation Read Mode (1 , follow­ ing timing conditions: C L E / I oo- Figure 17 . ID read timing Table 5. Code


OCR Scan
PDF TC5816ADC 16Mbit TC5816 NV16030496
2000 - MMFT3055VL

Abstract: TRANSISTOR LWW 21 TRANSISTOR LWW 43 TRANSISTOR LWW 20
Text: case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ± 15 ± 20 1.5 1.2 5.0 2.1 1.7 , 2 3 TO­261AA CASE 318E STYLE 3 TBD LWW mW/°C °C mJ ­55 to 175 L WW = Location Code , drain­to­source voltage and drain current that a transistor can handle safely when it is forward biased. Curves , operation, the stored energy from circuit inductance dissipated in the transistor while in avalanche must be , of RJA versus drain pad area is shown in Figure 17 . http://onsemi.com 643 MMFT3055VL 160 R


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PDF MMFT3055VL TRANSISTOR LWW 21 TRANSISTOR LWW 43 TRANSISTOR LWW 20
2000 - 5p03h

Abstract: TRANSISTOR LWW 21 ultra low level FET TO-236 sot363 ON Marking DS to247 pcb footprint TRANSISTOR LWW 20
Text: ) = 100 m P­Channel D G S MARKING DIAGRAM 4 TO­261AA CASE 318E STYLE 3 5P03H LWW L , 17 1.7 6.3 4.6 24 48 94 92 38 110 60 80 24 ­ ­ ­ ns nC SOURCE­DRAIN DIODE CHARACTERISTICS , Area curves define the maximum simultaneous drain­to­source voltage and drain current that a transistor , dissipated in the transistor while in avalanche must be less than the rated limit and must be adjusted for


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PDF MMFT5P03HD MMFT5P03HD 5p03h TRANSISTOR LWW 21 ultra low level FET TO-236 sot363 ON Marking DS to247 pcb footprint TRANSISTOR LWW 20
2009 - ultra low noise transistor

Abstract: amplifier TRANSISTOR 12 GHZ transistor cross reference chart BFR740L3 transistor cross reference transistor amplifier 3 ghz C 114 transistor SiGe Infineon
Text: Transistor as 1.7 - 2.3 GHz 1 Investigation of BFR740L3 Ultra Low Noise SiGe:C Transistor as 1.7 - 2.3 , characterized for the 1.7 - 2.3 GHz frequency range. Transistor package size is 1 x 0.6 x 0.39 mm (leadless , Application Note No. 114 Investigation of BFR740L3 Ultra Low Noise SiGe:C Transistor as 1.7 - 2.3 GHz , Noise SiGe:C Transistor as 1.7 - 2.3 GHz Details on TSLP-3-8 Leadless Package, dimensions in , , 2007-08-22 Application Note No. 114 Investigation of BFR740L3 Ultra Low Noise SiGe:C Transistor as 1.7 -


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PDF BFR740L3 ultra low noise transistor amplifier TRANSISTOR 12 GHZ transistor cross reference chart transistor cross reference transistor amplifier 3 ghz C 114 transistor SiGe Infineon
2006 - Buck-Boost Converter advantages

Abstract: SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
Text: topology and switching transistor * Only available in ISODRAIN package 8 PWM+CCM PFC CoolSET TM , Power Supplies SMPS Controller with very few peripheral components, using MOS Transistor , . 10.5 V ­ 17 V ­ 14 V ­ min. ­ ­ 150 µA 20 kHz ­ 100 kHz Run , Soft-start management C Topologies are forward or fly back C 50% maximum duty cycle 17 CoolSET TM , magnetic coupling C Cheap solution Disadvantages C Power transistor drain-source voltage VDS = VO > VI


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PDF B152-H8202-G4-X-7600 Buck-Boost Converter advantages SPA11N80C3 ice1qs02 tda16846 CoolMOS Power Transistor tda4605 application note TDA4605-3 TDA16888 ICE1QS01 equivalent transistor
2004 - PIR based human motion DETECTOR CIRCUIT DIAGRAM

Abstract: NPN transistor BC547 temperature sensor BC557 BC547 working APPLICATION TRANSISTOR security system using ir and pir sensor circuit diagram of IR SENSOR to detect heart rate PIR motion DETECTOR CIRCUIT DIAGRAM ACTIVE INFRARED MOTION DETECTOR infrared based security alarm IR SENSOR to detect heart rate automatic door infrared sensor
Text: into the following modules: 1. Transistor circuit used as an amplifier. 2. Transistor biasing controlled through the microcontroller. 3. Software-controlled transistor output. Figure 1. Block Diagram PIR sensor RC Integrator Transistor Amplifier ST7 Microcontroller Biasing Signal 2/ 17 , Systems. ­ Automatic lighting Systems ­ Automatic Door Openers Rev. 1.0 AN1828/0304 1/ 17 1ddd , DESCRIPTION Transistor Q3 is biased in the active region and amplifies the signal from the PIR sensor. The


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PDF AN1828 ST7FLITE05/09/SUPERLITE ST7FLITE05 AN1827 AN1828/0304 PIR based human motion DETECTOR CIRCUIT DIAGRAM NPN transistor BC547 temperature sensor BC557 BC547 working APPLICATION TRANSISTOR security system using ir and pir sensor circuit diagram of IR SENSOR to detect heart rate PIR motion DETECTOR CIRCUIT DIAGRAM ACTIVE INFRARED MOTION DETECTOR infrared based security alarm IR SENSOR to detect heart rate automatic door infrared sensor
2006 - S 170 MOSFET TRANSISTOR

Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
Text: t i M O S ® - P, S t a n d a r d M O S ) Co m p l e m e n t a r y P / N E n h a n ce m e n t 17 , 3.8 1.2 . 2.0 50 31 IPD04N03LA G 5.2 1.2 . 2.1 50 17 IPDH5N03LA G , . 2.0 8.5 1.2 . 2.0 50 17 IPD06N03LA G 6 1.2 . 2.1 50 14 , Reverse D-PAK 1.2 . 2.0 10.4 1.2 . 2.0 50 17 IPF06N03LA G 6.2 1.2 . 2.1 , 1.2 . 2.0 50 17 IPU06N03LA G 6.2 1.2 . 2.1 50 14 IPUH6N03LA G 8.8


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PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
2012 - SMD TRANSISTOR MARKING 2e

Abstract: 2e SMD PNP TRANSISTOR
Text: 4 / 17 NXP Semiconductors PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor , 9 / 17 NXP Semiconductors PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor , 15 / 17 NXP Semiconductors PBSS5130PAP 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor No , PBSS5130PAP 12 December 2012 30 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a


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PDF PBSS5130PAP DFN2020-6 OT1118) PBSS4130PANP. PBSS4130PAN. AEC-Q101 SMD TRANSISTOR MARKING 2e 2e SMD PNP TRANSISTOR
2012 - NPN TRANSISTOR SMD MARKING CODE B2

Abstract: DFN2020-6
Text: 2012 8 / 17 NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor , 15 / 17 NXP Semiconductors PBSS4230PAN 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor No , PBSS4230PAN 14 December 2012 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a , Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = 1 A; IB


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PDF PBSS4230PAN DFN2020-6 OT1118) PBSS4230PANP. PBSS5230PAP. AEC-Q101 NPN TRANSISTOR SMD MARKING CODE B2 DFN2020-6
2012 - TRANSISTOR SMD MARKING CODE 2s

Abstract: TRANSISTOR SMD MARKING CODE QR PBSS5112PAP transistor 103
Text: 2012 8 / 17 NXP Semiconductors PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor , 12 / 17 NXP Semiconductors PBSS5112PAP 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor 8 , PBSS5112PAP 30 November 2012 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor Product data , (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic , reference data Table 1. Symbol Per transistor VCEO IC ICM VEBO Per transistor RCEsat collector-emitter


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PDF PBSS5112PAP DFN2020-6 OT1118) PBSS4112PANP. PBSS4112PAN. AEC-Q101 TRANSISTOR SMD MARKING CODE 2s TRANSISTOR SMD MARKING CODE QR PBSS5112PAP transistor 103
2012 - npn transistor footprint

Abstract: No abstract text available
Text: 2012 8 / 17 NXP Semiconductors PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor , 15 / 17 NXP Semiconductors PBSS4260PAN 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor No , PBSS4260PAN 12 December 2012 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a , Per transistor VCEO IC ICM Per transistor RCEsat collector-emitter saturation resistance IC = 1 A; IB


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PDF PBSS4260PAN DFN2020-6 OT1118) PBSS4260PANP. PBSS5260PAP. AEC-Q101 npn transistor footprint
2012 - TRANSISTOR SMD MARKING CODE 2P

Abstract: DFN2020 transistor marking codes 2P transistor footprint
Text: 2012 8 / 17 NXP Semiconductors PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor , 11 / 17 NXP Semiconductors PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor 103 , 12 / 17 NXP Semiconductors PBSS5260PAP 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor 11 , PBSS5260PAP 12 December 2012 60 V, 2 A PNP/PNP low VCEsat (BISS) transistor Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a


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PDF PBSS5260PAP DFN2020-6 OT1118) PBSS4260PANP. PBSS4260PAN. AEC-Q101 TRANSISTOR SMD MARKING CODE 2P DFN2020 transistor marking codes 2P transistor footprint
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