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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR K 135 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - BFU510

Abstract: SiGe POWER TRANSISTOR
Text: SiGe wideband transistor BFU510 90° handbook, full pagewidth 1.0 +1 135 ° +0.5 10 , transistor BFU510 90° handbook, full pagewidth 135 ° 45° 1 GHz 0.25 180° 0.2 0.15 , DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product , NPN SiGe wideband transistor BFU510 FEATURES PINNING · Very high power gain PIN · , transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE


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PDF M3D124 BFU510 SCA75 613516/03/pp16 BFU510 SiGe POWER TRANSISTOR
2003 - BFU540

Abstract: SiGe POWER TRANSISTOR
Text: Product specification NPN SiGe wideband transistor BFU540 90° handbook, full pagewidth 135 , DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU540 NPN SiGe wideband transistor Product , NPN SiGe wideband transistor BFU540 FEATURES PINNING · Very high power gain PIN · , wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK , wideband transistor BFU540 LIMITING VALUES In accordance with the Absolute Maximum Rating System


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PDF M3D124 BFU540 SCA75 613516/04/pp16 BFU540 SiGe POWER TRANSISTOR
2011 - Not Available

Abstract: No abstract text available
Text: CM PA K -4 BFG325W/XR NPN 14 GHz wideband transistor Rev. 2 - 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4 , GHz wideband transistor [1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG , GHz wideband transistor 90° +1 135 ° + 0.5 +2 45° 1.0 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 , NXP Semiconductors BFG325W/XR NPN 14 GHz wideband transistor 90° 135 ° 45° 3 GHz 0.5


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PDF BFG325W/XR OT343R BFG325W
2001 - 10GHz oscillator

Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RCS9 RF TRANSISTOR 2.5 GHZ s parameter RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ LC marking code transistor 6 pins IC cbe
Text: Preliminary specification NPN SiGe wideband transistor BFU510 90° 1.0 +1 135 ° +0.5 10 GHz , Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 90° 45° 135 , DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary , transistor BFU510 PINNING FEATURES · Very high power gain PIN · Very low noise figure 1 , Fig.1 Simplified outline SOT343R. NPN SiGe wideband transistor for low voltage applications in a


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PDF M3D124 BFU510 SCA73 125104/00/04/pp12 10GHz oscillator 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RCS9 RF TRANSISTOR 2.5 GHZ s parameter RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ LC marking code transistor 6 pins IC cbe
2005 - TRANSISTOR Q2

Abstract: DI-102 DPA423GN "Power over Ethernet" POWER INTEGRATIONS DI-102
Text: minimum current gain K = 10 This is the ratio of transistor bias versus collector current (larger K , . Above the OV-off threshold ( 135 A), the DPA-Switch is disabled and below the OV-on threshold (131 A), the DPA-Switch becomes operational again. At start-up, transistor Q2 is pulled low (off) via resistor R5, so as not to interfere with the under-voltage detection threshold. Transistor Q2 is pulled high , turn-on level, at the defined threshold voltage (VIN(th) = 60 VDC). When turned-on, transistor Q2


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PDF DI-102 DPA423GN DI-102 TRANSISTOR Q2 DPA423GN "Power over Ethernet" POWER INTEGRATIONS DI-102
2002 - 5bb1

Abstract: C11531E
Text: DATA SHEET COMPOUND TRANSISTOR BB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching The BB1 Series is an N type small signal transistor and enables the reduction of component counts and downsizing of sets due to on-chip resistors. This transistor is , R1 ( K ) Electrode Connection 1. Emitte (E) 2. Collector (C) 3. Base (B) R2 ( K ) BB1A4A - , additional information. Document No. D11739EJ2V0DS00 (2nd edition) Date Published April 2002 N CP( K


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PDF C11531E) 5bb1 C11531E
2010 - bfp640f

Abstract: transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ
Text: Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Low Noise Amplifier (LNA), with reduced external component , Silicon-Germanium Transistor as 5 -6 GHz Single-Stage 1 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 , Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Summary Achieved 10 dB gain, 1.3 dB Noise Figure over the , Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Summary of Data T = 25 °C, network analyzer source power = , Application Note No. 126 BFP640F Low-Noise Silicon-Germanium Transistor as 5 -6 GHz Single-Stage Schematic


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PDF BFP640F transistor cross reference chart AN082 BFP640 amplifier TRANSISTOR 12 GHZ
2001 - 4 pin dual-emitter

Abstract: BFU510 TRANSISTOR FOR 10GHz oscillator RF TRANSISTOR 10GHZ low noise RF TRANSISTOR 10GHZ RF NPN power transistor 2.5GHz RF TRANSISTOR 2.5 GHZ s parameter RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ transistor bf 520
Text: transistor BFU540 90° 1.0 +1 135 ° 45° +0.5 10 GHz 5 GHz 0.8 +2 0.6 5 GHz , NPN SiGe wideband transistor BFU540 90° 45° 135 ° 1GHz 180° 0.25 0.20 0.15 , DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary , transistor BFU540 PINNING FEATURES · Very high power gain PIN · Very low noise figure 1 , Fig.1 Simplified outline SOT343R. NPN SiGe wideband transistor for low voltage applications in a


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PDF M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU510 TRANSISTOR FOR 10GHz oscillator RF TRANSISTOR 10GHZ low noise RF TRANSISTOR 10GHZ RF NPN power transistor 2.5GHz RF TRANSISTOR 2.5 GHZ s parameter RF POWER TRANSISTOR NPN RF NPN POWER TRANSISTOR 2.5 GHZ transistor bf 520
2001 - 4 pin dual-emitter

Abstract: BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
Text: wideband transistor BFU540 90° 45° 135 ° 1GHz 180° 0.25 0.20 0.15 0.10 0.05 , DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary , transistor BFU540 PINNING FEATURES · Very high power gain PIN · Very low noise figure 1 , Fig.1 Simplified outline SOT343R. NPN SiGe wideband transistor for low voltage applications in a , Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 LIMITING VALUES In


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PDF M3D124 BFU540 SCA73 125104/00/04/pp12 4 pin dual-emitter BFU540 10GHz oscillator MARKING A4 transistor o-50 RF NPN POWER TRANSISTOR 2.5 GHZ RF TRANSISTOR 10GHZ low noise transistor D 587
2005 - DI-102

Abstract: DPA423G POWER INTEGRATIONS DI-102 "Power over Ethernet"
Text: IOV_OFF Control-pin voltage Assumptions: VQ1(BE) = 0.7 VDC = 100 K = 10 Transistor base-emitter , via the current in L-pin resistor RLS. Above the OV-off threshold ( 135 µA), the DPA-Switch is , , transistor Q2 is pulled low (off) via resistor R5, so as not to interfere with the under-voltage detection threshold. Transistor Q2 is pulled high (on) via resistor R4 and will turn on once the input voltage , turned-on, transistor Q2 connects the Control pin (C) voltage (VC) to the L-pin via R6, thus adding a fixed


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PDF DI-102 DPA423G DI-102 DPA423G POWER INTEGRATIONS DI-102 "Power over Ethernet"
2005 - transistor marking codes list

Abstract: BFG325W
Text: /XR Philips Semiconductors NPN 14 GHz wideband transistor 90° 1.0 +1 135 ° +0.5 0.8 , Semiconductors NPN 14 GHz wideband transistor 90° 135 ° 45° 3 GHz 180° 0.5 0.4 0.3 , BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 - 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter , ] BFG325W/XR Philips Semiconductors NPN 14 GHz wideband transistor Table 1: Quick reference data


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PDF BFG325W/XR OT343R transistor marking codes list BFG325W
2006 - DRO lnb

Abstract: BFG424W
Text: GHz wideband transistor 90° 1.0 +1 135 ° +0.5 12 GHz 0.8 45° +2 0.6 +0.2 , transistor 90° 135 ° 45° 100 MHz 180° 50 40 30 20 10 0 0° 12 GHz - 135 , BFG424W NPN 25 GHz wideband transistor Rev. 01 - 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for , dissipation Tsp 103 °C [1] 25 30 mA - - 135 mW BFG424W Philips


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PDF BFG424W OT343R MSC895 BFG424W DRO lnb
2009 - FSEB30

Abstract: sdars BFP640 SMC-02 uhf amplifier design Transistor amplifier TRANSISTOR 12 GHZ LNA SiGe transistor
Text: R2 51 k Various 0402 Bring bias current / voltage into base of transistor R3 68 , endangered. Application Note No. 135 Application Note No. 135 Revision History: 2007-12-19, Rev. 1.2 , Note No. 135 Low Noise Amplifier (LNA) for 2.3 - 2.5 GHz Applications using the SiGe 1 Low Noise Amplifier (LNA) for 2.3 - 2.5 GHz Applications using the SiGe BFP640 Transistor Applications · 2.3 , BFP640 transistor , is 12. Achieved 15 dB gain, 0.96 dB Noise Figure at 2400 MHz from a 3.0 V supply


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2006 - DRO lnb

Abstract: mbb159 BFG424F SOT343F
Text: transistor 90° 1.0 +1 135 ° +0.5 12 GHz 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 , BFG424F NPN 25 GHz wideband transistor Rev. 01 - 21 March 2006 Product data sheet 1. Product profile 1.1 General description NPN double polysilicon wideband transistor with buried layer for , dissipation Tsp 90 °C [1] 25 30 mA - - 135 mW BFG424F Philips Semiconductors NPN 25 GHz wideband transistor Table 1: Quick reference data .continued Symbol


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PDF BFG424F OT343F MSC895 BFG424F DRO lnb mbb159 SOT343F
2011 - transistor l2

Abstract: transistor bf 194
Text: transistor 90° +1 135 ° + 0.5 +2 45° 1.0 0.8 0.6 0.4 0.2 180° 0 0.2 0.5 1 2 5 10 0° 0 + 0.2 3 GHz , Semiconductors BFG325/XR NPN 14 GHz wideband transistor 90° 135 ° 45° 3 GHz 0.5 0.4 0.3 0.2 0.1 0 , BFG325/XR NPN 14 GHz wideband transistor Rev. 2 - 15 September 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter , BFG325/XR NPN 14 GHz wideband transistor Quick reference data .continued Conditions IC = 15 mA; VCE =


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PDF BFG325/XR OT143R BFG325 transistor l2 transistor bf 194
2004 - transistor cq 1565 rt

Abstract: smd transistor 337 P-TO263-5-1 TLE4275GV33 Q67000-A9342 Q67006-A9343 Q67006-A9354 CQ 1565 RT
Text: voltage that is proportional to the output voltage and drives the base of the series transistor via a , Rthjc Rthj-a Rthj-a Rthj-a ­ 4 K /W ­ ­ 53 K /W TO2631) ­ 78 K /W TO2521) ­ 65 K /W TO220 Thermal Resistance Junction case Junction ambient Junction , Table 4 Characteristics VI = 13.5 V; -40 °C < Tj < 150 °C (unless otherwise specified) Parameter , ) VI = 13.5 V; -40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values


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PDF P-TO220-5-11 P-TO252-5-1 transistor cq 1565 rt smd transistor 337 P-TO263-5-1 TLE4275GV33 Q67000-A9342 Q67006-A9343 Q67006-A9354 CQ 1565 RT
2004 - smd transistor 337

Abstract: CQ 1565 RT transistor cq 1565 rt Q67006-A9343 TO252 rthjc P-TO263-5-1 Q67000-A9342 Q67006-A9354 TLE4275D
Text: voltage that is proportional to the output voltage and drives the base of the series transistor via a , Rthjc Rthj-a Rthj-a Rthj-a ­ 4 K /W ­ ­ 53 K /W TO2631) ­ 78 K /W TO2521) ­ 65 K /W TO220 Thermal Resistance Junction case Junction ambient Junction , Table 4 Characteristics VI = 13.5 V; -40 °C < Tj < 150 °C (unless otherwise specified) Parameter , ) VI = 13.5 V; -40 °C < Tj < 150 °C (unless otherwise specified) Parameter Symbol Limit Values


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PDF P-TO220-5-11 P-TO252-5-1 smd transistor 337 CQ 1565 RT transistor cq 1565 rt Q67006-A9343 TO252 rthjc P-TO263-5-1 Q67000-A9342 Q67006-A9354 TLE4275D
2009 - transistor cross reference chart

Abstract: BFP405F to4 88 TO4 45
Text: . 148 BFP405F RF Transistor as Low Cost, Low Current (2.5 mA) 3 to4 GHz UWB Tx 1 BFP405F RF Transistor as Low Cost, Low Current (2.5 mA) 3 to4 GHz UWB Tx Amplifier with 2.2 - 3.6 V Operation , Infineon BFP405F SIEGET RF Transistor in TSFP-4 package is shown in a low-cost transmit amplifier circuit , - - 3500 13.1 13.5 21.6 7.6 - - - -4.5 +9.1 4000 8.8 , Application Note No. 148 BFP405F RF Transistor as Low Cost, Low Current (2.5 mA) 3 to4 GHz UWB Tx Schematic


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PDF BFP405F transistor cross reference chart to4 88 TO4 45
2005 - TRANSISTOR L2

Abstract: transistor bf 194 E C B
Text: Philips Semiconductors NPN 14 GHz wideband transistor 90° 1.0 +1 135 ° +0.5 0.8 45 , wideband transistor 90° 135 ° 45° 3 GHz 180° 0.5 0.4 0.3 0.2 0.1 0 40 , BFG325/XR NPN 14 GHz wideband transistor Rev. 01 - 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter , wideband transistor Table 1: Quick reference data .continued Symbol Parameter Conditions


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PDF BFG325/XR OT143R TRANSISTOR L2 transistor bf 194 E C B
1999 - thyristor capacitive discharge ignition

Abstract: insect killer sensor FLC 100 thyristor pin diagram circuit diagram ignitor capacitor discharge ignition thyristor ignitor FAST SWITCHING THYRISTOR ST igniter Ignition Transformer
Text: igniting threshold voltage. D: Diode for the reverse conduction. R: 2 k resistor. DEVICE TYPE APPLICATION FLC21- 135 BATTERY OPERATION FLC22- 135 FLC21-65 100V Mains FLC22-65 FUNCTIONAL , Value 150 Junction to ambient Unit °C/W ORDERING INFORMATION FLC 2 x - 135 A PACKAGE A: TO92 FIRE LIGHTER CIRCUIT LOW POWER (75A) 135 VRM = 135V 65 VRM = 65V CONNECTIONS , = 25°C 65 85 135 tp 1ms Tj = 25°C 500 500 µA Tj = 25°C Without


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PDF FLC21/22 FLC21 FLC22 thyristor capacitive discharge ignition insect killer sensor FLC 100 thyristor pin diagram circuit diagram ignitor capacitor discharge ignition thyristor ignitor FAST SWITCHING THYRISTOR ST igniter Ignition Transformer
2008 - 30RF35

Abstract: VJ1206Y104KXB smd transistor equivalent table
Text: BLF6G27- 135 ; BLF6G27LS- 135 WiMAX power LDMOS transistor Rev. 01 - 21 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base , frequency range NXP Semiconductors BLF6G27- 135 ; BLF6G27LS- 135 WiMAX power LDMOS transistor 2 , BLF6G27LS- 135 Typ 0.5 0.45 Unit K /W K /W 2 of 12 BLF6G27- 135 _BLF6G27LS-135_1 © NXP B.V. 2008. All , BLF6G27- 135 ; BLF6G27LS- 135 WiMAX power LDMOS transistor 6. Characteristics Table 6. Characteristics


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PDF BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table
2007 - PG-TO252-5-11

Abstract: PG-TO263-5-1 ceramic capacitor 103 aec CQ 1565 RT P-TO263-5-1 AEP02580 IEP02527
Text: output voltage and drives the base of the series transistor via a buffer. Saturation control as a , -40 150 °C ­ Rthjc Rthj-a Rthj-a Rthj-a ­ 4 K /W ­ ­ 53 K /W TO2631) ­ 78 K /W TO2521) ­ 65 K /W TO220 Thermal Resistance Junction case , , 2007-02-19 TLE 4275 Table 4 Characteristics VI = 13.5 V; -40 °C < Tj < 150 °C (unless otherwise , Temperature output voltage drift dVQ/dT ­ 0.5 ­ mV/ K Data Sheet 6 ­ Rev. 1.7


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PDF P-TO220-5-11 PG-TO220-5-11 P-TO252-5-11 PG-TO252-11 PG-TO252-5-11 PG-TO263-5-1 ceramic capacitor 103 aec CQ 1565 RT P-TO263-5-1 AEP02580 IEP02527
2000 - TLE4276DV

Abstract: P-TO220-5-122 TLE4276V 4276DV Q67000-A9273 Q67000-A9271 Q67000-A9267 Q67000-A9265 Q67000-A9264 Q67000-A9262
Text: the base of the series transistor via a buffer. Saturation control as a function of the load current , ­ 65 K /W TO220 ­ 70 K /W TO2521), TO263 ­ 4 K /W ­ Thermal Resistance , Version 2 6 2000-02-14 TLE 4276 Characteristics VI = 13.5 V; ­ 40 °C < Tj < 150 °C (unless , V R2 < 50 k VQ + 1 V VI 40 V VI > 4.5 V 5 mA IQ 400 mA Output current limitation1) IQ , 100 mV from the nominal value obtained at VI = 13.5 V. Data Sheet Version 2 7 2000-02-14


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PDF Q67000-A9262 P-TO220-5-3 Q67000-A9263 Q67000-A9264 Q67000-A9267 P-TO220-5-43 Q67000-A9269 TLE4276DV P-TO220-5-122 TLE4276V 4276DV Q67000-A9273 Q67000-A9271 Q67000-A9267 Q67000-A9265 Q67000-A9264 Q67000-A9262
Motorola Bipolar Power Transistor Data

Abstract: PACKAGE DIMENSIONS CASE 751-05 R8X0
Text: . - ! ù k DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.60 5.00 3.60 4.00 1.35 1.75 0.35 0.49 0.40 , J3P03B JT M otorola Preferred Device · DUAL BIPOLAR POWER TRANSISTOR PNP SILICON 30 VOLTS 3 , < 300 |xs, Duty Cycle < 2%. (2) f r = I^FE1* ftest Cob - C|b - PF 100 150 pF 135 - h - MHz 110 - 2 Motorola Bipolar Power Transistor Device Data M M DJ3P03BJT 1.0 10 , CURRENT (A) Figure S. "On" Voltages Figure 6. "On" Voltages Motorola Bipolar Power Transistor


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PDF MMDJ3P03BJT/D J3P03B Base-21 ----------------------------MMDJ3P03BJT/D Motorola Bipolar Power Transistor Data PACKAGE DIMENSIONS CASE 751-05 R8X0
2004 - to220 pcb footprint

Abstract: SMD TRANSISTOR B-37 smd transistor 512 smd transistor code 622 Q67006-A9369 TLE4276V TLE4276DV SV50 j 6 smd transistor GV10
Text: the base of the series transistor via a buffer. Saturation control as a function of the load current , Rthj-a Rthj-a Rthj-c ­ 65 K /W TO220 ­ 80 K /W TO252, TO2631) 4 K /W ­ Thermal , TLE 4276 Table 4 Characteristics VI = 13.5 V; -40 °C < Tj < 150 °C (unless otherwise , tolerance VQ -4 ­ 4 % V-Version 1 R2 < 50 k VQ + 1 V VI 40 V VI > 4.5 V 5 mA IQ , . 2.4, 2004-01-01 TLE 4276 Table 4 Characteristics (cont'd) VI = 13.5 V; -40 °C < Tj < 150


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PDF P-TO220-5-43 P-TO220-5-122 P-TO220-5-3 P-TO252-5-1 P-TO252-5-11 Q67000-A9262 P-TO220-5-3, P-TO220-5-11 Q67000-A9263 to220 pcb footprint SMD TRANSISTOR B-37 smd transistor 512 smd transistor code 622 Q67006-A9369 TLE4276V TLE4276DV SV50 j 6 smd transistor GV10
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