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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LTC2627CDE#TR Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I2C Interface; Package: DFN; Pins: 12; Temperature Range: 0°C to 70°C
LTC2627IDE-1#TRPBF Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I2C Interface; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C
LTC2627CDE-1 Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I2C Interface; Package: DFN; Pins: 12; Temperature Range: 0°C to 70°C
LTC2627CDE-1#TR Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I2C Interface; Package: DFN; Pins: 12; Temperature Range: 0°C to 70°C
LTC2627IDE Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I2C Interface; Package: DFN; Pins: 12; Temperature Range: -40°C to 85°C
LTC2627CDE#PBF Linear Technology LTC2627 - 12-Bit Dual Rail-to-Rail with I2C Interface; Package: DFN; Pins: 12; Temperature Range: 0°C to 70°C

TRANSISTOR D 2627 Datasheets Context Search

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SG3627

Abstract: TRANSISTOR D 2627 SG1627J SG1627 SG3627J constant current source with 500mA SG2627 SG1524 SG1627J/883B Scans-003836
Text: drivers which will either source or sink up to 500mA of current. The sink transistor is designed as a saturating switch while the source transistor can be used either as a switch or as a constant current , Collector Voltage SG1627, 2627 . 30V SG3627 , CONDITIONS (Note 2) Supply Voltage, Vcc SG1627, 2627 , Collector Voltage SG1627, 2627 . 5V to 30V SG3627


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PDF SG1627/SG2627/SG3627 SG1627 500mA 16-PIN SG1627J/883B SG1627J SG2627J SG3627J SG3627 TRANSISTOR D 2627 SG3627J constant current source with 500mA SG2627 SG1524 Scans-003836
TRANSISTOR D 2627

Abstract: No abstract text available
Text: processing available D E S C R IP T IO N The SG1627 series devices are monolithic, high-speed driver , two independent drivers which will either source or sink up to 500mA of current. The sink transistor is designed as a saturating switch while the source transistor can be used either as a switch or as a , the SG3627 for 0°C to 70°C. S C H E M A T IC (one-half of total device shown) B L O C K D IA G R , , 2627 . S G 362 7


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PDF SG1627ISG2627/SG3627 500mA 300ns SG1524 MIL-STD-883 SG1627 16-PIN SG1627J/883B SG1627J SG2627J TRANSISTOR D 2627
TRANSISTOR D 2627

Abstract: SG3627 20ii2 SG3627J SG1627J
Text: 500 2 0 0 n s / d lv ls io 20 0 - s / d ^ s i o COLLECTOR CURRENT - FIGURE 4. SINK TRANSISTOR , either source or sink up to 500mA of current. The sink transistor is designed as a saturating switch while the source transistor can be used either as a switch or as a constant current generator with , 20V Source or Sink Current, D C . 500mA Note 1. Exceeding these ratings could , 20V Source or Sink Current, D C .0mA to 500mA Note 2. Range over


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PDF SG1627/SG2627/SG3627 500mA 300ns SG1524 SG1627 MIL-STD-883 SG1627 500mA SG1627J/883B SG1627J TRANSISTOR D 2627 SG3627 20ii2 SG3627J
TRANSISTOR D 2627

Abstract: Silicon General SG1524
Text: SILICON GENERAL INC 11 D E ^ 0253000 DG01373 Q |~~I7-£ Z ~ !7 SiLifion BenBPaL LINEAR INTEÇRATED CIRCUITS SG1627 1SG2627 1SG3627 . DESCRIPTION D U A L HIGH-CURRENT O U TPU T DRIVER , source or sink up to 500 mA of current. The sink transistor Is designed as a saturating switch while the , Supply Voltage, V c c SG1627, 2627 20V . 3627 30V Output Collector Voltage SG1627, 2627 SG3627 20V 500 mA , output transistor , factored duty cycle. ELECTRICAL CHARACTERISTICS Unless otherwise stated


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PDF DG01373 SG1627 1SG2627 1SG3627 SG1524 TRANSISTOR D 2627 Silicon General SG1524
TRANSISTOR D 2627

Abstract: transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor BU546 transistor BC RH T0126 12A3 Telefunken Electronic
Text: transistor orientation on the tape is shown in Fig. 7.4 and Fig. 7.5. 2517 E-06 A 27 I 17E D â , DQQRMÔ? - BU 546 Silicon NPN Power Transistor Applications; Switching mode power supply Features: â , BU 546 I?E D ■öTsoo'ib Doomaa s malgg T-33-13 I Characteristics ■25 0 C, unless otherwise , time 0.5 ijs "^•S0.01,fp=0.1 ms 104 2625 F-02 1?E D fi^EOORb DOOmfi6) 4 ' BU 546 T-33-13 - . , 2627 F-04 fci I - -. TELEFUNKEN ELECTRONIC 2628 F-Û5 TELEFUNKEN ELECTRONIC BU 546 °CB


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PDF r-33-13 T0126 15A3DIN TRANSISTOR D 2627 transistor D 2624 transistor k 2628 TRANSISTOR 1300 3B on 2518 transistor BU546 transistor BC RH T0126 12A3 Telefunken Electronic
AVANTEK transistor

Abstract: No abstract text available
Text: Silicon Bipolar Transistor Avantek 70 mil Package Features • Q0Db472 • Low Noise Figure: 1.6 d B typical at 2.0 G Hz 3.0 d B typical at 4.0 G Hz High A ssociated Gain: 14.5 d B typical at 2.0 GHz 10.5 d B typical at 4.0 GHz High Gain-Bandwidth Product: 8.0 G Hz typical fr â , ance N PN silicon bipolar transistor housed in a hermetic, high reliability package. This device is , F and micro­ w ave frequencies. (unless otherwise specified) 1. D im ensions are ^ 2


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PDF AT-41470 Q0Db472 000b474 AVANTEK transistor
12 volt smps Circuit diagram

Abstract: tea2029c 24 volt smps power supply 6V SMPS circuit diagram 3 phase smps circuit diagram TEA2261 SMPS Transformer Symbol pulse width modulator for smps smps circuit diagram of 12 volt smps power supply
Text: are. possible : - D Class : Pow er stage using an external thyristor. - B Class : Power stage using an , , independent of Vcc and any delay in switching off the scanning transistor . Video Identification The horizontal , line frequency. The power transistor is turned off by the falling edge of the horizontal saw-tooth. The , Symbol Supply Current (pin 8, frame, line and SMPS output without load) Icc SYNCH SEPARATOR (Pins 26-27 , (c o n t in u e d ) Parameter Positive Current Negative Current Output Current Output Saturation


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PDF TEA2029C 500kHz TEA2261) TDA8172 TEA2261 12 volt smps Circuit diagram tea2029c 24 volt smps power supply 6V SMPS circuit diagram 3 phase smps circuit diagram SMPS Transformer Symbol pulse width modulator for smps smps circuit diagram of 12 volt smps power supply
Not Available

Abstract: No abstract text available
Text: What HEW LETT 1"UM P A C K A R D Up to 6 GHz Low N oise Silicon Bipolar Transistor Technical , geometry yields an intermediate sized transistor with impedances that are easy to m atch for low noise and , transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is , bipolar transistor that offers excellent high frequency performance. The AT-41470 is housed in a hermetic , this transistor to be used in many different functions. The 14 emitter 2 AT-41470 A bsolute


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PDF AT-41470 5965-8927E 5966-4946E
2006 - Not Available

Abstract: No abstract text available
Text: advanced InGaP Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the , 0454 http://www.rfmd.com 2-627 RF5263 Preliminary Please contact RF Micro Devices


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PDF RF5263 11b/g/n RF5263 11g/n 16-pin, 2400MHz 2500MHz RF5263PCBA-41X
Not Available

Abstract: No abstract text available
Text: The SD2941-10 is a gold metallized N-Channel MOS field-effect RF power transistor , intended for use , 50 UA 'GSS VGS = 20 V VDS = 0 V 250 nA VGS(Q) (2) V D S =10V ID = 250mA , P 3.3-3.4 BB 1.6- 1.7 F 2.5-2.6 Q 3.4 - 3.5 CC 1,7- 1.8 G 2.6-2.7 , 3.9 - 4.0 C 2.2-2.3 M 3.1 -3.2 D 2.3-2.4 N 3.2-3.3 SD2941-10 Mechanical , . 5.584 TYP. 0.219 MAX A B 5.56 3.18 C D 6.22 E 18.28 0.125 6.48


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PDF SD2941-10 175MHz SD2941-10
2009 - TLP181GR

Abstract: BAV756S ZR431 BAV756S/SG115 TLP181-GR transistor bc846 PF600-1 BC846 BAV99W 333G
Text: off the receive transistor , registering a "fail". Figure 1: AC Power Fail Warning Circuit , transistor of an optoisolator. In the typical connection shown above, it produces a low logic level during , receive transistor , this logic can be inverted. www.murata-ps.com ACAN-11.A01 Page 1 of 3 PF600 , PC1 Optoisolator Toshiba TLP181GR Q1 NPN transistor BC846 R1, R2 Resistor 33k , 2.76 0.64 2.6-2.7 14 265 3.08 0.86 2.85-2.95 11 www.murata-ps.com ACAN


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PDF PF600-1 PF600-1 PF600-1. PF600-1, ACAN-11 TLP181GR BAV756S ZR431 BAV756S/SG115 TLP181-GR transistor bc846 BC846 BAV99W 333G
Not Available

Abstract: No abstract text available
Text: P h ilip ^ e m ic o n d u c to r^ ^ ^ ■b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a , wideband transistor BFQ135 N AMER PHILIPS/DISCRETE b5E D CHARACTERISTICS Tj = 25 °C unless , transistor - N AUER PHILIPS/DISCRETE BFQ135 b5E D Table 1 Common emitter


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PDF BFQ135 OT172A1
TRANSISTOR D 2627

Abstract: D 4206 TRANSISTOR BFQ135 transistor 224-1 base collector emitter bfq135 scattering 1817 transistor DIN45004B 1348 transistor TRANSISTOR C 2570 c 2570 transistor
Text: wideband transistor BFQ135 N AMER PHILIPS/DISCRETE blE D DESCRIPTION NPN transistor in a 4 , transistor BFQ135 - N A PIER PHILIPS/DISCRETE blE D CHARACTERISTICS T, = 25 °C unless otherwise specified , – APX 'roduct specification NPN 6.5 GHz wideband transistor BFQ135 - N AMER PHILIPS/DISCRETE b^E D L2 , transistor BFQ135 N AMER PHILIPS/DISCRETE b'ÌE D -30 dlm (dB) -40 -50 -70 -80 50 : 18 V. 160 . , wideband transistor BFQ135 - N AHER PHILIPS/DISCRETE b'lE D Table 1 Common emitter scattering parameters


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PDF BFQ135 OT172A1 OT172A1. SYMB69 TRANSISTOR D 2627 D 4206 TRANSISTOR BFQ135 transistor 224-1 base collector emitter bfq135 scattering 1817 transistor DIN45004B 1348 transistor TRANSISTOR C 2570 c 2570 transistor
1998 - at-41470

Abstract: Silicon Bipolar Transistor Hewlett-Packard
Text: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41470 Features · Low Noise , , Gold-ceramic Microstrip Package finger interdigitated geometry yields an intermediate sized transistor with , . The AT-41470 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT , a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT , emitter-to-emitter pitch enables this transistor to be used in many different functions. The 14 emitter 2 AT


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PDF AT-41470 AT-41470 5965-8927E 5966-4946E Silicon Bipolar Transistor Hewlett-Packard
1994 - eht transformer used in color tv

Abstract: TDA8172 500Khz resonator philips tv flyback transformer data pin 3 phase smps circuit diagram flyback transformer philips TV smps 12 volt fly back transformer 6 PIN smps control ic flyback transformer tv
Text: Frame scanning processor. Two applications are possible : - D Class : Power stage using an external , and any delay in switching off the scanning transistor . Video Identification The horizontal , frequency. The power transistor is turned off bythe falling edge of the horizontal saw-tooth. The "soft , /9 Vpp µA µA 2029C-03.TBL SYNCH SEPARATOR (Pins 26-27 ) TEA2029C ELECTRICAL OPERATING , nA µA SYNCH SEPARATOR (Pins 26-27 ) (continued) ­ I26 I26 Positive Current Negative Current


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PDF TEA2029C 500kHz 50/60Hz TEA2029C eht transformer used in color tv TDA8172 500Khz resonator philips tv flyback transformer data pin 3 phase smps circuit diagram flyback transformer philips TV smps 12 volt fly back transformer 6 PIN smps control ic flyback transformer tv
eht transformer used in color tv

Abstract: circuit diagram of 12 volt smps power supply circuit diagram of smps 220v philips tv flyback transformer data pin TEA2029C flyback transformer philips TV smps 12 volt TDA8172 3 phase smps circuit diagram 24 volt smps power supply
Text: Frame scanning processor. Two applications are possible : - D Class : Power stage using an external , and any delay in switching off the scanning transistor . Video Identification The horizontal , frequency. The power transistor is turned off bythe falling edge of the horizontal saw-tooth. The "soft , /9 Vpp µA µA 2029C-03.TBL SYNCH SEPARATOR (Pins 26-27 ) TEA2029C ELECTRICAL OPERATING , nA µA SYNCH SEPARATOR (Pins 26-27 ) (continued) ­ I26 I26 Positive Current Negative Current


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PDF TEA2029C 500kHz 50/60Hz TEA2029C eht transformer used in color tv circuit diagram of 12 volt smps power supply circuit diagram of smps 220v philips tv flyback transformer data pin flyback transformer philips TV smps 12 volt TDA8172 3 phase smps circuit diagram 24 volt smps power supply
2001 - 8807AEHA

Abstract: TRANSISTOR D 2627 aeha 8807 AME8807AEHA 831 SO8 MARKING 203-1 8807 AEHA AME8807 AME8807BEHA ame 1064
Text: Description n Enable The AME8807 family of CMOS regulators contain a PMOS pass transistor , voltage , high. When actively, pulled low, the PMOS pass transistor shuts off, and all internal circuits are , electronic switch. The P-channel pass transistor receives data from the error amplifier, over-current , =2.2µF 25 O C 20 IL(200mA/DIV) Ground Current (µA) µ 40 15 10 5 IL o a d 0 0 0 , . Output Voltage Power Supply Rejection Ratio 0 -10 0.25 IL O A D = 6 0 0 m A -20 0.2


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PDF AME8807 600mA AME8807 2006-DS8807-C 8807AEHA TRANSISTOR D 2627 aeha 8807 AME8807AEHA 831 SO8 MARKING 203-1 8807 AEHA AME8807BEHA ame 1064
Not Available

Abstract: No abstract text available
Text: ) THROUGH A LOW COST TRANSFORMER DIP28 (Plastic Package) O R D ER C O D E : TEA2029C PIN , : - D Class : Power stage using an external thyristor. - B Class : Power stage using an external , , independent of Vcc and any delay in switching off the scanning transistor . Video Identification The , voltage of 1.26V and a phase modulator operating at the line frequency. The power transistor is turned , . Unit 80 mA S Y N C H SEPA RA TO R (Pins 26-27 ) Positive Video Input A C Coupled (output


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PDF TEA2029C 500kHz TEA2029C TDA8172 TEA2261
2002 - 8807AEHA

Abstract: AME8807AEHA TRANSISTOR D 2627 8807 AEHA 8807B 8807BEHA 831 SO8 AME8807BEHA AME8807 ADJ- 537
Text: Enable The AME8807 family of CMOS regulators contain a PMOS pass transistor , voltage reference, error , actively, pulled low, the PMOS pass transistor shuts off, and all internal circuits are powered down. In , . The P-channel pass transistor receives data from the error amplifier, over-current shutdown, and , 2.73 2.63 2.54 2.45 2.37 2.30 2.23 2.16 2.10 2.04 1.99 1.93 57.18 36.00 26.27 20.68 , 0.05 y e 10 0.19 L 7o(4X) B 0.01299 0.02008 D ? 0.51 C D 0.33


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PDF 600mA AME8807 AME8807 2006-DS8807-H 8807AEHA AME8807AEHA TRANSISTOR D 2627 8807 AEHA 8807B 8807BEHA 831 SO8 AME8807BEHA ADJ- 537
MA4F004

Abstract: No abstract text available
Text: Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect , 26-27 dBm devices are ideal as drivers in power amplifiers or as a basis for broadband power am plifier , -918 NOTE: D erating curves are a vailable fo r o th er m odels. Model Number MA4F004-918 Symbol f PldB , , V d s = 10V> f = 6 GHz Gain at 1dB Compression Point V d s = 10V, f = 6 GHz Power Added Efficiency V , Gm Saturated Drain Current at = 4V, v g s = o Pinch-Off Voltage at V d s = 4V, IDS = 1mA mA ( -


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PDF MA4F004 Number4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300
2004 - AME8807AEHA

Abstract: 8807 AEHA
Text: pass transistor , voltage reference, error amplifier, over-current protection, and thermal shutdown. The Enable pin normally floats high. When actively, pulled low, the PMOS pass transistor shuts off , This pin behaves much like an electronic switch. The P-channel pass transistor receives data from , 2.30 2.23 2.16 2.10 2.04 1.99 1.93 57.18 36.00 26.27 20.68 17.05 14.51 12.62 11.17 , REF B L Front View 0.01299 0.02008 0.19 0.25 0.00748 0.00984 D c £ 0.51


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PDF 600mA AME8807 AME8807 2006-DS8807-K AME8807AEHA 8807 AEHA
three phase pulse generator

Abstract: tda2172 TEA2026C sawtooth generator cq90 modulator VCR constant current smps circuit diagram VB11 DIP28 TEA2026
Text: AND START-UP PROCESSOR ■SWITCHING POWER TRANSISTOR IS TURNED OFF BY LINE FLY BACK SIGNAL TEA2026C , D Class Power stage using an external thyr-istor. _ B Class Power stage using an external power , scanning transistor . VIDEO IDENTIFICATION The horizontal synchronization signal is sampled by a 2 |as , V and a phase modulator operating at the line frequency. The power transistor is turned off by the , without 50 80 mA load) Synch. Separator (pins 26-27 ) Positive video input AC coupled (ouput


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PDF TEA2026C three phase pulse generator tda2172 TEA2026C sawtooth generator cq90 modulator VCR constant current smps circuit diagram VB11 DIP28 TEA2026
FET transistors with s-parameters

Abstract: MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918 ma4f004
Text: Gallium Arsenide Field Effect Transistor Description The MA4F004 series of gallium arsenide fieldeffect , as amplifiers, oscillators and switches with high reliability and low energy consumption. These 26-27 , tstg CASE TEMPERATURE, Tc (°C) FIGURE 1. Power Derating Curve for MA4F004-918 NOTE: D erating , Test Conditions OA = 25°C) Frequency Range of Operation Power Output at 1dB Compression Point, V d s = 10V, f = 6 GHz Gain at 1dB Compression Point Vd s = 10V, f = 6 GHz Power Added Efficiency V d s = 10V


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PDF 000Db25 MA4F004 4701B MA-4F001 MA-4F004 MA-4F600 MA-4F200 MA-4F300 FET transistors with s-parameters MICROWAVE ASSOCIATES MA4F600 f TIP 122 transistor MA4F004-918
2006 - GSC2156

Abstract: 6EAD GSC215 ma 709 TRANSISTOR D 2627 adj- 537
Text: REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 , Detailed Description The GSC2156 of COMS regulator contain a PMOS pass transistor , voltage reference, error amplifier, over-current protection, and thermal shutdown. The P-channel pass transistor receives , floats high. When actively, pulled low, the PMOS pass transistor shuts off, and all internal circuits , 19.70 26.27 32.84 39.41 45.97 52.54 59.11 65.68 1.45 5.17 10.34 15.51


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PDF GSC2156 GSC2156 600mA 6EAD GSC215 ma 709 TRANSISTOR D 2627 adj- 537
2006 - GSC2176

Abstract: No abstract text available
Text: REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 , Detailed Description The GSC2176 of COMS regulator contain a PMOS pass transistor , voltage reference, error amplifier, over-current protection, and thermal shutdown. The P-channel pass transistor receives , floats high. When actively, pulled low, the PMOS pass transistor shuts off, and all internal circuits , 19.70 26.27 32.84 39.41 45.97 52.54 59.11 65.68 1.45 5.17 10.34 15.51


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PDF GSC2176 GSC2176 600mA
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