The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SCT3030AR SCT3030AR ECAD Model ROHM Semiconductor 650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AR SCT3060AR ECAD Model ROHM Semiconductor 650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3105KL SCT3105KL ECAD Model ROHM Semiconductor 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3017AL SCT3017AL ECAD Model ROHM Semiconductor 650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3030KL SCT3030KL ECAD Model ROHM Semiconductor 1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3080AL SCT3080AL ECAD Model ROHM Semiconductor 650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

TRANSISTOR C 6090 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - TRANSISTOR C 6090 EQUIVALENT

Abstract: transistor C 6092 equivalent adns A6090 TRANSISTOR C 6090 ADNB-6092 adns 6090 ADNB-6091 ADNS-6090 A6090 transistor c 6091
Text: user. ADNB-6091 AND ADNB-6092 includes: Bundle Part Number ADNB-6091 The ADNS- 6090 sensor along , on the bundle set, followed by individual detailed information on ADNS- 6090 laser mouse sensor, ADNV-6340 VCSEL, ADNS-6120 and ADNS-6130001 lens and ADNS-6230-001 clip. Part Number ADNS- 6090 ADNV-6340 ADNS , Vertical-Cavity Surface Emitting Laser (VCSEL) Laser Mouse Trim Lens VCSEL Assembly Clip ADNB-6092 ADNS- 6090 , and Base Plate Customer Supplied VCSEL PCB ADNS- 6090 (sensor) ADNV-6340 (VCSEL) Customer Supplied PCB


Original
PDF ADNB-6091 ADNB-6092 ADNB-6092 ADNB-6091 ADNS-6090 ADNS-6120 ADNS-6230-001 TRANSISTOR C 6090 EQUIVALENT transistor C 6092 equivalent adns A6090 TRANSISTOR C 6090 adns 6090 A6090 transistor c 6091
2005 - TRANSISTOR C 6090 EQUIVALENT

Abstract: TRANSISTOR C 6090 adns A6090 transistor 6090 ADNS-6090 AN-5088 transistor uw DELAY 701 A6090
Text: ADNS- 6090 Gaming Laser Mouse Sensor Data Sheet Description The Avago Technologies ADNS- 6090 , sensitive user. There is no moving part in the complete assembly for ADNS- 6090 laser mouse system, thus it , pins · Laser fault detect circuitry on-chip Theory of Operation The ADNS- 6090 is based on , ) and mathematically determining the direction and magnitude of movement. ADNS- 6090 contains an Image , Figure 3. Assembly drawing of ADNS- 6090 (top, front and cross-sectional view) 2D Assembly Drawing


Original
PDF ADNS-6090 ADNS-6090 ADNS-6120 ADNS-6130-001 ADNS-6230-001 ADNV-6340 AV02-1362EN TRANSISTOR C 6090 EQUIVALENT TRANSISTOR C 6090 adns A6090 transistor 6090 AN-5088 transistor uw DELAY 701 A6090
2005 - TRANSISTOR C 6090 EQUIVALENT

Abstract: TRANSISTOR C 6090
Text: ADNS- 6090 Gaming Laser Mouse Sensor Data Sheet Description Features The Avago Technologies ADNS- 6090 sensor along with the ADNS-6120 or ADNS-6130-001 lens, ADNS-6230-001 clip and ADNV , 65ips and 20g There is no moving part in the complete assembly for ADNS- 6090 laser mouse system , Applications Theory of Operation The ADNS- 6090 is based on LaserStream technology, which measures changes in , and magnitude of movement. ADNS- 6090 contains an Image Acquisition System (IAS), a Digital Signal


Original
PDF ADNS-6090 ADNS-6090 ADNS-6120 ADNS-6130-001 ADNS-6230-001 ADNV-6340 AV02-1362EN TRANSISTOR C 6090 EQUIVALENT TRANSISTOR C 6090
TRANSISTOR C 6090

Abstract: TRANSISTOR C 6090 npn transistor pt 6020 NE687 S21E UPA808T UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS (Units in mm , epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage , +0.10 0.15 - 0.05 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 0 ~ 0.1 Note: Pin 3


Original
PDF UPA808T NE687 UPA808T TRANSISTOR C 6090 TRANSISTOR C 6090 npn transistor pt 6020 S21E UPA808T-T1 UPA808T-T1-A ic 4790 A 7440 pin transistor
2005 - TRANSISTOR 3358

Abstract: transistor 9527 LB 4890 NE685 S21E UPA806T UPA806T-T1 UPA806T-T1-A of IC 9290 transistor k 4110
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS (Units in mm , small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for , . Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package


Original
PDF UPA806T NE685 UPA806T TRANSISTOR 3358 transistor 9527 LB 4890 S21E UPA806T-T1 UPA806T-T1-A of IC 9290 transistor k 4110
1998 - TRANSISTOR C 6090 npn

Abstract: TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 NE685 S21E
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA806T OUTLINE DIMENSIONS (Units in mm , small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for , . Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package


Original
PDF UPA806T NE685 UPA806T 24-Hour TRANSISTOR C 6090 npn TRANSISTOR C 6090 transistor 9527 BJT 5240 bf 9804 A 3120 0532 8 pin 901 704 16 08 55 UPA806T-T1 S21E
TRANSISTOR C 6090

Abstract: transistor pt 6020 TRANSISTOR C 6090 npn Transistor 17567 transistor 5910 transistor 9740 Bf 148 TRANSISTOR 13270 transistor
Text: SILICON TRANSISTOR UPA808T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · SMALL , . Each transistor is independently mounted and easily configured for either dual transistor or cascode , +0.10 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25° C ) PART NUMBER PACKAGE OUTLINE SYMBOLS


Original
PDF UPA808T NE687 UPA808T 24-Hour TRANSISTOR C 6090 transistor pt 6020 TRANSISTOR C 6090 npn Transistor 17567 transistor 5910 transistor 9740 Bf 148 TRANSISTOR 13270 transistor
transistor K 2937

Abstract: TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor
Text: SILICON TRANSISTOR NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES · · · · SMALL PACKAGE STYLE , package. Each transistor is independently mounted and easily configured for either dual transistor or , hand-held wireless applications. 0.9 ± 0.1 0.7 0 ~ 0.1 0.15 - 0.05 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 +0.10 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL


Original
PDF NE685 UPA806T UPA806T 24-Hour transistor K 2937 TRANSISTOR C 6090 transistor 9527 transistor 9740 TRANSISTOR C 6090 npn BJT 5240 transistor k 4110 TRANSISTOR c 8050 1865-4 k 3531 transistor
1999 - TRANSISTOR C 6090

Abstract: TRANSISTOR C 6090 npn NE687 S21E UPA808T UPA808T-T1 7440 pin transistor lb 7610
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA808T OUTLINE DIMENSIONS (Units in mm , in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make , 0.7 +0.10 0.15 - 0.05 PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 0 ~ 0.1 Note: Pin 3


Original
PDF UPA808T NE687 UPA808T 24-Hour TRANSISTOR C 6090 TRANSISTOR C 6090 npn S21E UPA808T-T1 7440 pin transistor lb 7610
cd 0765 rt

Abstract: IC 7440 SG 5010 08/bup 3110 transistor
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES SMALLPACKAGE STYLE: 2 NE687 Die in a 2 mm x 1.25 , transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily config ured for either dual transistor or cascode operation. The high It , low voltage bias and , . C o lle cto rT ra n sisto rl 2. E m itte rT ra n sisto rl 3. C o lle ctorT ra n sisto r2 4. E m itte rT ra n sisto r2 5. Base Transistor 2 6. Base Transistor 1 Note: Pin 3 is identified with a circle on


OCR Scan
PDF NE687 UPA808T UPA808T 24-Hour cd 0765 rt IC 7440 SG 5010 08/bup 3110 transistor
2005 - TRANSISTOR C 6090 EQUIVALENT

Abstract: TRANSISTOR C 6090 5989-1584EN adns 6090 ADNS-6090 3d laser sensor ADNS-6010 ADNS-6000 ADNS6130-001 ADNS-7010
Text: Laser Mouse Sensor Eye Safety Calculations ADNS-6000, ADNS-6010, ADNS- 6090 and ADNS , the Avago Technologies ADNS-6000, ADNS-6010, ADNS- 6090 and ADNS-7050 laser mouse sensor when use , x 10 4 C 4 C 7 W 3.9 x 10 4 C 4 C 7 W If t > T2 and 1.5mrad 7 x 0 -4 C 4 C 6 C 7 T2-0.5 W 7 x 0 -4 C4 C 6 C 7 T2-0.5 W 3.9 x 10 4 4 7 W -4 -0.75 7 and C 4C 6 C 7 If t > T2x 0 T >1.5 mrad J 7 x 0 -4 T -0.75 C 4T 6 CW x 0 -4 C C C C -0.5 7 J Or 7 4 6 7 2 (1) (2) (3


Original
PDF ADNS-6000, ADNS-6010, ADNS-6090 ADNS-7010 ADNS-7050 ADNS-6120 ADNS6130-001 TRANSISTOR C 6090 EQUIVALENT TRANSISTOR C 6090 5989-1584EN adns 6090 3d laser sensor ADNS-6010 ADNS-6000 ADNS-7010
TRANSISTOR C 6090 npn

Abstract: RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
Text: =:25° C and Tc^100° C to provide limit values for worst-case design • Controlied-lifetime production , -A types (2N6671-2N6673) are performedl at 125° C ; on 10-A and 15-A types (2N6674-2N6678) at 100° C , , ultrasonic, and rf circuits RCA Family Structure " C Max. A PT Max. W vCEO 60-90 0.75-1.2 20-25 15 0.5 2 2 N 3263 n-p-n 25 125 60-90 0.75-1.2 20-25 15 0.5 2 , amplifiers RCA Family Structure > C Max. A Pt Max. W VcEO(sus) Range V VcE(sat) Range V Beta


OCR Scan
PDF O-22Q RCS683 2N6537 2N6530 2N6388 2N6666 2N6650 RCA8766 2N6284 2N6287 TRANSISTOR C 6090 npn RCA Power Transistor TO-3 4 225 TRANSISTOR C 6090 2n6675 rca pnp transistor beta values 2N62* rca to3 transistor 6090 audio output TRANSISTOR NPN driver transistor hfe 60-100 2N5415
TRANSISTOR C 6090 npn

Abstract: transistor 9527 BJT 5240 k 3531 transistor CD 14603
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ · · · . · SMALL PACKAGE , pin SMT package. Each transistor is independently mounted and easily config ured for either dual transistor or cascode operation. The high ft, low voltage bias and small size make this device suited for , CollectorTransistor2 EmitterTransistor2 Base Transistor 2 Base Transistor 1 Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS c ) PART NUMBER PACKAGE OUTLINE


OCR Scan
PDF NE685 UpA806T UPA806T 24-Hour TRANSISTOR C 6090 npn transistor 9527 BJT 5240 k 3531 transistor CD 14603
impatt

Abstract: ka band transistor IAFM-10 impatt diode impatt diode datasheet IAFM-28 ELVA-1 30030040 iafm
Text: , Ka Q U V E GHz 26.5-40 33-50 40-60 50-75 60-90 Maximum Power Output* 150 150 120 100 50 , environments. The operating temperature range: minus 50 to plus 70 ° C and life time is equal to 50000 hours , . Transistor oscillator stabilised by the dielectric resonator (DRO). 6-8 GHz, 10 mW output, 10-6 frequency , . Transistor power amplifier that provides 6-8 GHz power sufficient for the normal operation of IAFM-XX. 3


Original
PDF
2003 - TRANSISTOR C 6090

Abstract: No abstract text available
Text: DIODE ° C /kW i DIODE ms 1 0.292 0.109 0.467 0.099 2 1.615 3.136 2.633 3.206 3 6.090 45.600 , , n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide , Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol , Continuous collector current Peak collector current Max. transistor power dissipation Diode I t value (IGBT , . 1700 ±20 Units V V A A W kA S V pC 2 Tcase = 85° C 1ms, Tcase =105° C Tcase = 25° C , T j = 150


Original
PDF DIM1200FSM17-A000 DS5456-3 LN24177) DIM1200FSM17-A000 TRANSISTOR C 6090
2003 - Not Available

Abstract: No abstract text available
Text: mounting grease) Transistor Diode - - 8 ° C /kW Tj Junction temperature -40 - - , 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide , . Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise , voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I t , 0V Max. 1700 ±20 Units V V A A W kA S V pC 2 Tcase = 85° C 1ms, Tcase =105° C Tcase = 25° C


Original
PDF DIM1200FSM17-A000 DS5456-3 LN24544) DIM1200FSM17-A000
2001 - of la 7830 pin

Abstract: DO-123 DO126 HD 11310 DO116 DO85 DO-77 d 317 transistor DO121 ups 2581 v
Text: level. The driver output transistor is turned ON and OFF when the latch data is at "H" level and at "L" , Maximum Junction Temperature Tjmax 125 ° C Operating Temperature Range Topr -10 to +80 ° C Storage Temperature Range Tstg -40 to +125 ° C Power Supply Voltage Seiko , Table 3 DC Electrical Characteristics VDD = 5.0 V ± 10%, Ta = -10 to +80 ° C unless otherwise specified , ELECTRICAL CHARACTERISTICS Table 4 AC Electrical Characteristics VDD = 5.0 V ± 10%, Ta = -10 to +80 ° C


Original
PDF 128-bit S-4670A S-4670A 128-bit of la 7830 pin DO-123 DO126 HD 11310 DO116 DO85 DO-77 d 317 transistor DO121 ups 2581 v
npq2222

Abstract: TRANSISTOR C 6090 npn TRANSISTOR C 6090 2N2222 MHQ2222 ic 4510 MOTOROLA 2n2218 TRANSISTOR PQ2222 2N2218 MOTOROLA 2n2222 plastic
Text: 2N2222 Series Size Compatible With IC .< u c u B lU u E u u E MHQ2221 .3;Q:.;, , .,.,. " Transistor *"{.*"$:Y> .s .*,",. Total Device Dissipation @TA = 25° C Derate above 25° C MHQ2221, MPQ2221, `":<~$"~D !Sf!$> .<,.? "<,.;,. " MH$22~$ `" , 10.88 mW/° C 19 .,$. 1 . . Operating 3.72 6.5 c CERAMIC Device 1.9 0,65 , W,qh, . 091 I gram DIM A B c D E F G H J K L M N P I INCHES Ml N MAX 0110


Original
PDF 2N2218 2N2222 MHQ2221 15mAdc) 30mAdc) IN916 npq2222 TRANSISTOR C 6090 npn TRANSISTOR C 6090 2N2222 MHQ2222 ic 4510 MOTOROLA 2n2218 TRANSISTOR PQ2222 2N2218 MOTOROLA 2n2222 plastic
BA6791

Abstract: 2SB1132 BA6790FP BA6791FP HSOP28
Text: single attached resistor. 6) Internal 5V regulator, (requires attached PNP transistor ) 7) Internal , transistor base 19 VIN3 Driver CH3 input 6 REG OUT Constant voltage output, connects to external transistor , dissipation Pd 1.7*1 W Operating temperature Topr -35-85 " C Storage temperature Tstg -55-150 * 1 When , over 25' C . ►Recommended operating conditions Parameter Symbol Limits Unit Power supply voltage Vcc 6.0-9.0 * 2 V * 2. 4.5-9 V when regulator not used (pins 5 and 6 may be opened) noHm 343 Optical disc


OCR Scan
PDF BA6790FP/BA6791FP BA6790FP BA6791 28-pin BA6791FP HSOP28 2SB1132 BA6791FP HSOP28
2007 - EG 8010

Abstract: transistor 9018 NPN
Text: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF , : gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25° C ) Characteristics , Rating 10 5 2 40 10 100 125 -55~125 Unit V V V mA mA mW ° C ° C Note: Using continuously under heavy , Marking Microwave Characteristics (Ta = 25° C ) Characteristics Transition frequency Symbol fT (1) fT (2 , 25° C ) Characteristics Collector cut-off current Emitter cut-off current DC current gain Reverse


Original
PDF MT3S04AT EG 8010 transistor 9018 NPN
2003 - 4317 0215 transistor

Abstract: MT3S04AT IB 6415
Text: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF , Unit: mm High gain: gain = 12.5dB (at f = 1 GHz) Maximum Ratings (Ta = 25° C ) Characteristics , 125 ° C Tstg -55~125 ° C Storage temperature range JEDEC JEITA Marking TOSHIBA 2-1B1A Weight: 0.0022 g (typ.) Microwave Characteristics (Ta = 25° C ) Characteristics , MT3S04AT Electrical Characteristics (Ta = 25° C ) Characteristics Symbol Test Condition Min Typ


Original
PDF MT3S04AT 4317 0215 transistor MT3S04AT IB 6415
MT3S04T

Abstract: NF 924
Text: TO SHIBA TENTATIVE MT3S04T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF , 1.2 ±0.05 0.8 ± 0.05 : Gain = 12.5 dB (at f = 1 GHz) MAXIMUM RATINGS (Ta = 25° C ) CHARACTERISTIC , Power Dissipation Junction Temperature Storage Temperature Range UNIT V V V mA mA mW ° C ° C JEDEC EIAJ , CHARACTERISTICS (Ta = 25° C ) CHARACTERISTIC Transition Frequency SYMBOL f*r (i) f*T (2) TEST CONDITION Iq = 5 mA Ic - 7 mA Ic = 5 mA, Ic - 20 mA, Ic = 5 mA, I c -? mA, MIN. TYP. MAX. UNIT 2 Insertion


OCR Scan
PDF MT3S04T CHARACTER89 IS21I2 MT3S04T NF 924
2493 transistor

Abstract: marking 9721 IC 7109
Text: TO SH IBA TENTATIVE MT3S04AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VH F-U H , MAXIMUM RATINGS (Ta = 25° C ) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base , 2 5 UNIT V V V mA mA mW ° C ° C JEDEC EIA J TOSHIBA 2-1B1A 1. BASE 2. EMITTER 3. COLLECTOR MICROWAVE CHARACTERISTICS (Ta = 25° C ) CHARACTERISTIC Transition Frequency SYMBOL fx d ) f*T (2) TEST , - 5 7 9.5 12.5 1.3 1.2 - - - dB - 2.2 Insertion Gain Noise Figure V c e = 1 V, VCE = 3


OCR Scan
PDF MT3S04AT IS21I2 2493 transistor marking 9721 IC 7109
2003 - TRANSISTOR C 6090

Abstract: DIM1200FSS12-A000
Text: . transistor power dissipation Tcase = 25° C , T j = 150° C 10400 W 2 It Visol 2 2 , Continuous dissipation ­ junction to case Junction temperature Transistor - - 150 ° C - , 0.01 0.1 1 10 Pulse width, tp - (s) i Ri IGBT ° C /kW 2 1.615 3 6.090 4 , 1200V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a , Absolute Maximum Ratings may affect device reliability. Tcase = 25° C unless stated otherwise Symbol


Original
PDF DIM1200FSS12-A000 DS5834-1 LN24178) DIM1200FSS12-A000 TRANSISTOR C 6090
2009 - TRANSISTOR C 6090

Abstract: bi-directional switches IGBT DIM1200FSS12-A000 DS5834-1
Text: =115° C 2400 A Pmax Max. transistor power dissipation Tcase = 25° C , Tj = 150° C 10400 , 0.1 1 10 Pulse width, tp - (s) i Ri IGBT ° C /kW 1 0.292 2 1.615 3 6.090 4 , enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10 s short circuit withstand. 1 ( C ) 2 ( C ) 7 ( C ) 9 (G) 8 (E , 25° C unless stated otherwise Parameter Symbol VCES Collector-emitter voltage VGES


Original
PDF DIM1200FSS12-A000 DS5834-1 LN26321) DIM1200FSS12-A000 TRANSISTOR C 6090 bi-directional switches IGBT
Supplyframe Tracking Pixel