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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR C 5928 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2003 - gsm module 900

Abstract: delta v dcs B100 DLT3201 GSM900 NL-5928
Text: Heterojunction Bipolar Transistor (HBT) process and containing also internal components for input and output , +150 C Operating Temperature -25 +85 C Duty Cycle at Max. Power 50 % Output , Condition Max. 34.5dBm (Temp=+25 C , Vcc=3.5V, 4-slot) 880MHz to 915MHz @ saturated output power , FAX : 353-61-336240 INDUSTRIEGEBIED VENLO NR. 9031, COLUMBUSWEG 20, NL- 5928 LC VENLO, THE


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PDF DLT3201 GSM900 DCS1800/PCS1900 GSM900; DCS1800/PCS1900 DLT3201 NL-5928 FIN-00101, gsm module 900 delta v dcs B100
2008 - sanyo ic 7550

Abstract: IC 7458 Transistor C 4927 2SC5781 D2502 16451 ic 7522 ps
Text: Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 , at Ta=25° C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit 9 V , Collector Dissipation IC PC 100 mW Junction Temperature Tj 150 ° C Storage Temperature Tstg -55 to +150 ° C Collector Current Marking : NK Pay attention to handling , -100013 No.7321-1/7 2SC5781 Electrical Characteristics at Ta=25° C Parameter Symbol min typ


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PDF ENN7321 2SC5781 2SC5781] sanyo ic 7550 IC 7458 Transistor C 4927 2SC5781 D2502 16451 ic 7522 ps
2002 - sanyo ic 7550

Abstract: 5645 marking marking 12697 12904 6221 ic 12697 ic 14069 9109 DC D2502 2SC5781
Text: Ordering number : ENN7321 2SC5781 NPN Epitaxial Planar Silicon Transistor 2SC5781 , Ratings at Ta=25° C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage , ° C Storage Temperature Tstg -55 to +150 ° C Collector Dissipation Marking : NK , , TOKYO, 110-8534 JAPAN D2502 TS IM TA-100013 No.7321-1/7 2SC5781 Electrical Characteristics at Ta=25° C , Temperature, Ta - ° C 140 160 IT04850 No.7321-3/7 2SC5781 S Parameters (Common emitter) VCE


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PDF ENN7321 2SC5781 2SC5781] sanyo ic 7550 5645 marking marking 12697 12904 6221 ic 12697 ic 14069 9109 DC D2502 2SC5781
Not Available

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES LOW NOISE: NF = 1.3 , Storage Temperature UNITS V V V mA mW mW ° C ° C RATINGS 5 3 2 30 90 180 150 -65 t o +150 Ic Pt , VCE = 2 V / 0 50 100 150 0 0.5 1.0 Ambient Temperature, T a (° C ) DC Base Voltage, V , < E 200 nA 180 -1 6 0 140 mA mA mA C O o o 3 Ç < 0 3 o o o 120 pA Q ) 80 nA 60 , (mA) 3-289 UPA828TF TYPICAL PERFORMANCE CURVES (Ta = 25 c ) GAIN BANDWIDTH PRODUCT vs


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PDF NE687 UPA828TF UPA828TF mirror59 UPA828TF-T1
ha 13483

Abstract: j 6815 transistor transistor 9647 LS 7405 NEC IC 5020 098
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR UPA828TF FEATURES LOW NOISE , utline TS06 (Top View) HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic = 20 m A , . ELECTRICAL CHARACTERISTICS (Ta = 25 c ) PART NUM BER PACKAGE OUTLINE SYM BO LS ICBO Iebo hFE UPA828TF , 0.1 140 PARAM ETERS AND CO NDITIONS Collector Cutoff Current at V c b = 5 V , I e = 0 Emitter Cutoff Current at V eb = 1 V, Ic = 0 DC Current Gain1 at V c e = 2 V , Ic = 20 mA Gain Bandwidth at V c e


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PDF UPA828TF NE687 UPA828TF UPA828TF-T1 24-Hour ha 13483 j 6815 transistor transistor 9647 LS 7405 NEC IC 5020 098
BA 7312

Abstract: ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 fr 3709 ha 13483
Text: PRELIMINARY DATA SHEET NEC FEATURES LOW NOISE: NPN SILICON EPITAXIAL TWIN TRANSISTOR , = 2 GHz, Vce = 2 V, Ic = 3 m A HIGH GAIN: |S 21 e |2 = 8.5 dB TYP at f = 2 GHz, V c e = 2 V, Ic , circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (Ta = 2 5 PART NUM BER PA C KA G E O UTLINE SY M B O LS ICBO I ebo hFE c ) UPA828TF TS06 UNITS HA HA 70 GHz GHz PF dB dB 7 6 1.3 1.3 0.85 , ce = 2 V, Ic = 20 mA Gain Bandwidth at V c e = 2 V, Ic = 20 mA, f = 2 GHz Gain Bandwidth at V c e = 1


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PDF UPA828TF NE856 UPA828TF PA828TF PA828TF-T1 24-Hour BA 7312 ba 3822 ls NEC IC 5020 098 BA 6688 L em 6695 6 pin ic 6628 j 6815 transistor BA 5977 fr 3709 ha 13483
ic 7809

Abstract: OF IC 7809 UPA828TF-T1 NE687 S21E UPA828TF 3699 npn electrical characteristics IC 7809
Text: PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS , read left to right. ELECTRICAL CHARACTERISTICS (TA = 25° C ) PART NUMBER PACKAGE OUTLINE SYMBOLS , Eastern Laboratories UPA828TF ABSOLUTE MAXIMUM RATINGS1 (TA = 25° C ) SYMBOLS PARAMETERS UNITS , Dissipation 1 Element 2 Elements mW mW 90 180 TJ Junction Temperature ° C 150 TSTG Storage Temperature ° C -65 to +150 Note: 1.Operation in excess of any one of these parameters


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PDF UPA828TF UPA828TF UPA828TF-T1 24-Hour ic 7809 OF IC 7809 UPA828TF-T1 NE687 S21E 3699 npn electrical characteristics IC 7809
2011 - soft start and stop circuit 555 timer

Abstract: BD8316GWL voltage to frequency converter using ic 555 timer bd8210
Text: P-board P N Parasitic element C Transistor (NPN) B N E GND P N P P N , -0Q1Q0AJ00170-1-2 2012.08.03 Rev. 003 BD8316GWL Pin Description Datasheet C B A 1 2 3 4 Fig.2 Pin assignment (Bottom view) Pin No. A-1 A-2 A-3 A-4 B-1 B-3 B-4 C -1 C -2 C -3 C -4 Pin Name VDD HS2L LX2 GND LX1 , -50 -50 3.7 3.7 1.2 1.2 -1 -1 -1 1.5 -0.3 500 - MAX 2.35 150 1.76 90 90 - 5.928 12.5 0.808 50 50 4.7 , -0Q1Q0AJ00170-1-2 2012.08.03 Rev. 003 BD8316GWL Typical Performance Characteristic (Unless otherwise specified, Ta = 25° C


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PDF BD8316GWL BD8316GWL 230m/22V 230m/15V soft start and stop circuit 555 timer voltage to frequency converter using ic 555 timer bd8210
2011 - soft start and stop circuit 555 timer

Abstract: soft start circuit 555 timer 3 pin FET smd 2300
Text: P-board Transistor (NPN) B C E GND P N P P N P N P-board P , Rev. 003 BD8316GWL Pin Description Datasheet C B A 1 2 3 4 Fig.2 Pin assignment (Bottom view) Pin No. A-1 A-2 A-3 A-4 B-1 B-3 B-4 C -1 C -2 C -3 C -4 Pin Name VDD HS2L LX2 GND LX1 , -50 -50 3.7 3.7 1.2 1.2 -1 -1 -1 1.5 -0.3 500 - MAX 2.35 150 1.76 90 90 - 5.928 12.5 0.808 50 50 4.7 , -0Q1Q0AJ00170-1-2 2012.08.03 Rev. 003 BD8316GWL Typical Performance Characteristic (Unless otherwise specified, Ta = 25° C


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PDF BD8316GWL BD8316GWL 230m/22V 230m/15V soft start and stop circuit 555 timer soft start circuit 555 timer 3 pin FET smd 2300
2011 - soft start and stop circuit 555 timer

Abstract: MLP2520S TSZ2211114001 soft start circuit 555 timer NR3012T4R7M
Text: Terminal A Terminal B P N P-board C Transistor (NPN) B E GND P N P P N , -0Q1Q0AJ00170-1-2 2012.12.01 Rev.001 BD8316GWL Pin Description C B A 1 2 3 4 Fig.2 Pin No. A-1 A-2 A-3 A-4 B-1 B-3 B-4 C -1 C -2 C -3 C -4 Pin Name VDD HS2L LX2 GND LX1 STB1 STB2 DIS1 VREF NON1 INV2 Pin , 3.7 1.2 1.2 -1 -1 -1 1.5 -0.3 500 - MAX 2.35 150 1.76 90 90 - 5.928 12.5 0.808 50 50 4.7 4.7 480 160 , -0Q1Q0AJ00170-1-2 2012.12.01 Rev.001 BD8316GWL Typical Performance Characteristic (Unless otherwise specified, Ta = 25° C


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PDF BD8316GWL BD8316GWL 230m/22V 230m/15V soft start and stop circuit 555 timer MLP2520S TSZ2211114001 soft start circuit 555 timer NR3012T4R7M
2011 - GRM21BB31A

Abstract: GRM155B11A104K soft start and stop circuit 555 timer soft start circuit 555 timer GRM155B11A104 NR3015T4R7M GRM21BB31A475K INV21 555 for boost converter
Text: P-board P N Parasitic element C Transistor (NPN) B N E GND P N P P N , Rev. 003 BD8316GWL Pin Description Datasheet C B A 1 2 3 4 Fig.2 Pin assignment (Bottom view) Pin No. A-1 A-2 A-3 A-4 B-1 B-3 B-4 C -1 C -2 C -3 C -4 Pin Name VDD HS2L LX2 GND LX1 , -50 -50 3.7 3.7 1.2 1.2 -1 -1 -1 1.5 -0.3 500 - MAX 2.35 150 1.76 90 90 - 5.928 12.5 0.808 50 50 4.7 , -0Q1Q0AJ00170-1-2 2012.08.03 Rev. 003 BD8316GWL Typical Performance Characteristic (Unless otherwise specified, Ta = 25° C


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PDF BD8316GWL BD8316GWL 230m/22V 230m/15V GRM21BB31A GRM155B11A104K soft start and stop circuit 555 timer soft start circuit 555 timer GRM155B11A104 NR3015T4R7M GRM21BB31A475K INV21 555 for boost converter
2009 - CGH40006

Abstract: f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
Text: electron mobility transistor (HEMT). The CGH40006, operating from a 28 volt rail, offers a general , amplifier circuits. The transistor is available in Package Type s: 440109 PN's: CGH40 006P , notice. www.cree.com/wireless 1 Absolute Maximum Ratings (not simultaneous) at 25° C Case , Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -55, +150 ° C Operating Junction Temperature TJ 225 ° C Maximum Forward Gate Current mA IGMAX 2.1 Soldering


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PDF CGH40006P CGH40006 CGH40006, CGH40 f 14019 amplifier CGH40006P-TB transistor j352 cgh40006p 006P RO5880 J352 16649
carrier chiller

Abstract: CM23 F-2101 F-2105 sot transistor
Text: P.O. Box 5928 Greenville, SC 29606 Phone (864) 963-6300 Fax (864) 963-66521 www.kemet.com , of the board are the resisttor chips, ceramic capacitor chips, and SOT transistor packages , "Surface Mount - Mounting Pad Dimensions and Considerations" F2100. C . Circuit Pad Orientation: For the , material has a glass transition temperature (approximately 125° C ) nearer the preheat and wave solder , solutions, making removal very difficult. 5 C . Cleaning methods and materials: A recent trend in the


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PDF F2105A F-2101 carrier chiller CM23 F-2105 sot transistor
Mn2O3

Abstract: Ta2O5 MnO2
Text: by John D. Prymak KEMET Electronics Corp. P. O. Box 5928 Greenville , same time as the invention of the transistor , in the same Bell Laboratories in 1948. It has grown in , pellets are then sintered in a vacuum at temperatures approaching 2,000° C , to expand the bond areas of , material dramatically. Typically this conversion process takes place at a temperature range of 400° C to 480° C . The cathode plate in a solid tantalum capacitor is created by a successive series if dip and


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2001 - RETICON photodiode array 512

Abstract: AMPLI DUAL CV 60 reticon photodiode array RL1505LFQ-711 RETICON Reticon photodiode array 1024 pixel RL1202LGQ-711 RL1502LFQ-711 RL1201LGQ-711 RL1205
Text: forward diode voltage drop at 25° C is 592.8 mV. The equation for computing junction temperature from the , Aperture Response Function N-1 N N+1 2.5 mm A C C 25 µm 50 µm A 19 µm 44 µm B 6 µm 6 , Sensor Characteristics (contd.) Table 1. Electrical Characteristics (25° C ) Interference effects in , . The dark current of an L-series sensor at 25° C is typically 0.2 pA for the 25 µm models or 0.4 pA for the 50 µm, doubling for every 7° C increase in temperature. See Table 2 for detailed


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PDF sil5-0703 D-65199 DSP-106 8/2001W RETICON photodiode array 512 AMPLI DUAL CV 60 reticon photodiode array RL1505LFQ-711 RETICON Reticon photodiode array 1024 pixel RL1202LGQ-711 RL1502LFQ-711 RL1201LGQ-711 RL1205
2001 - RETICON photodiode array 512

Abstract: RL1202LGQ-711 RL1205LGQ-711 RETICON RL1210LGQ-711 RETICON 128 RL1201LGQ-711 RETICON TB series sensors Reticon photodiode array 1024 pixel photodiode 256 elements silicon
Text: shown in Figure 5. The forward diode voltage drop at 25° C is 592.8 mV. The equation for computing , Figure 2. Sensor Geometry and Aperture Response Function N-1 N N+1 2.5 mm A C 25 µm 50 µm A 19 µm 44 µm B 6 µm 6 µm B C Silicon Dioxide N-Silicon 0.5 mm Response The , µm models. The dark current of an L-series sensor at 25° C is typically 0.2 pA for the 25 µm models or 0.4 pA for the 50 µm, doubling for every 7° C increase in temperature. See Table 2 for detailed


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PDF sil-0703 D-65199 DSP-106 10/2001W RETICON photodiode array 512 RL1202LGQ-711 RL1205LGQ-711 RETICON RL1210LGQ-711 RETICON 128 RL1201LGQ-711 RETICON TB series sensors Reticon photodiode array 1024 pixel photodiode 256 elements silicon
nec 16312

Abstract: ha 13463 SN 16880 8377 om 7082 B ic audio amplifier TRANSISTOR C 5706 sn 7456 nec 8039 9522 transistor sm 4205
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 x 2SC5184) THIN-TYPE SMALL MINI MOLD FEATURES , perforation side of the tape. o C O ^ J3 " n - iI & _i_ i H- 1 J _ 1 ' i in dl i -r 1 1 _ _ C M QO ! I C D 1 _ I - co Remark If you require an evaluation sample, please contact an , MAXIMUM RATINGS (T a = 25° C ) Parameter Collector to Base Voltage Collector to Emitter Voltage Em itter to


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PDF uPA828TF 2SC5184) /xPA828TF /xPA828TF-T1 nec 16312 ha 13463 SN 16880 8377 om 7082 B ic audio amplifier TRANSISTOR C 5706 sn 7456 nec 8039 9522 transistor sm 4205
2011 - BD9355

Abstract: BD9355MWV DE2815 HX33
Text: ), should be avoided. Resistance (Terminal A) (Terminal B) C Transistor (NPN) B E , (internal node) monitor OVP:VO7 monitor Conditions condition L=4.3µH (TOKO:DE4518C) C =22µF R1=390, R2=75k L=4.7µH (TOKO:DE2815) C =10µF R1=440, R2=200k Cc=12pF L=4.7µH (TOKO:DE2815) C =10µF R1=300, R2=600k L=4.7µH (TOKO:DE2815) C =10µF R1=300, R2=240k Vo (V) Vin (V) 2.5 3.6 4.2 5.0 2.5 Io_max (mA) 100 100 100 100 30 40 50 50 25 40 40 40 30 40 40 40 condition L=4.7µH (TOKO:DE2815) C =10µF R1=156k, R2=30k Cc


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PDF BD9355MWV R1120A BD9355 BD9355MWV DE2815 HX33
2011 - DE2815

Abstract: BD9355
Text: ), should be avoided. Resistance (Terminal A) (Terminal B) C Transistor (NPN) B E (TerminalA , ) monitor OVP:VO7 monitor Conditions condition L=4.3µH (TOKO:DE4518C) C =22µF R1=390, R2=75k L=4.7µH (TOKO:DE2815) C =10µF R1=440, R2=200k Cc=12pF L=4.7µH (TOKO:DE2815) C =10µF R1=300, R2=600k L=4.7µH (TOKO:DE2815) C =10µF R1=300, R2=240k Vo (V) Vin (V) 2.5 3.6 Io_max (mA) 100 100 100 100 30 40 50 50 25 40 40 40 30 40 40 40 condition L=4.7µH (TOKO:DE2815) C =10µF R1=156k, R2=30k Cc=1000pF L


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PDF BD9355MWV R1120A DE2815 BD9355
2011 - a56 transistor smd datasheet

Abstract: No abstract text available
Text: (Terminal A) + ~ ~ C ~ Transistor (NPN) B Resistor (Terminal Bï , -0Q1Q0AJ00170-1-2 2012.08.03 Rev. 003 Datasheet BD8316GWL ●Pin Description C B A 1 2 3 4 Fig.2 Pin , Ground connection B-1 LX1 B-3 STB1 B-4 STB2 C -1 DIS1 C -2 VREF C -3 NON1 C -4 INV2 PchPowerMOS drain of boost channel. Connect to diode and inductor Enable pin of , -6.072 -6.000 - 5.928 V DVLi VINV INON1 IINV2 TSS1 TSS2 0.792 -50 -50 3.7 3.7


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PDF BD8316GWL BD8316GWL a56 transistor smd datasheet
Replacing MnO2 with Conductive Polymer in Tantalum Capacitors

Abstract: F2116 Ta2O5 TANTALUM capacitor ESR vs frequency T495D tantalum capacitor dip MnO2 materials T495
Text: Replacing MnO2 with Polymers 1999 CARTS by John Prymak Applications Manager P.O. Box 5928 , approaching 2000° C , and in a vacuum. This porous metal pellet is then dipped into an electrolyte solution , the same time the transistor was discovered. Dipping the pellet structure in manganese nitrate , tantalum ca- Reduced Capacitance Roll-off -55° C +125° C Capacitance (uFd) 100 Capacitance (uFd , dry process introduces multiple thermal cycle exposures (+23° C to +270° C ) to the combination of


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PDF F2116 Replacing MnO2 with Conductive Polymer in Tantalum Capacitors Ta2O5 TANTALUM capacitor ESR vs frequency T495D tantalum capacitor dip MnO2 materials T495
2003 - transistor nec 8772

Abstract: transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
Text: NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES · · HIGH BREAKDOWN VOLTAGE SiGe , only 0.59 mm Flat lead style for better RF performance Pb Free Available (-A) NPN SiGe RF TRANSISTOR , frequency performance for compact wireless designs. DESCRIPTION ELECTRICAL CHARACTERISTICS (TA = 25° C , ABSOLUTE MAXIMUM RATINGS1 (TA = 25° C ) SYMBOLS VCBO VCEO VEBO IC PT2 TJ TSTG PARAMETERS UNITS V V V mA mW ° C ° C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector


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PDF NESG2031M05 OT-343 NESG2031M05 transistor nec 8772 transistor BR 8772 nec 8772 transistor NEC transistor 8772 8772 nec transistor br 8772 transistor MJE 15004 transistor BR 8772 nec 8772 9622 transistor
transistor nec 8772

Abstract: nec 8772 transistor BR 8772 transistor BR 8772 MJE 15004 transistor MJE 4302 NESG2031M05 S21E rf ic 3358 NESG2031M05-T1-A
Text: NPN SiGe RF TRANSISTOR NESG2031M05 NEC's NPN SiGe HIGH FREQUENCY TRANSISTOR FEATURES · , CHARACTERISTICS (TA = 25° C ) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NESG2031M05 , ABSOLUTE MAXIMUM RATINGS1 (TA = 25° C ) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to , Rth j-c Junction to Case Resistance ° C /W TBD Collector Current mA 35 PT2 Total Power Dissipation mW 175 TJ Junction Temperature ° C 150 TSTG Storage Temperature


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PDF NESG2031M05 OT-343 NESG2031M05 transistor nec 8772 nec 8772 transistor BR 8772 transistor BR 8772 MJE 15004 transistor MJE 4302 S21E rf ic 3358 NESG2031M05-T1-A
transistor nec 8772

Abstract: nec 8772 transistor BR 8772 transistor BR 8772 nec 8772 NEC transistor 8772 MJE 4302 8772 nec transistor NESG2031M05-T1 C 5074 transistor
Text: NEC's NPN SiGe NESG2031M05 HIGH FREQUENCY TRANSISTOR FEATURES · HIGH BREAKDOWN VOLTAGE SiGe , performance for compact wireless designs. ELECTRICAL CHARACTERISTICS (TA = 25° C ) PART NUMBER PACKAGE , Eastern Laboratories NESG2031M05 ABSOLUTE MAXIMUM RATINGS1 (TA = 25° C ) THERMAL RESISTANCE , Collector to Base Voltage V 13.0 Rth j-c Junction to Case Resistance ° C /W TBD VCEO , mA 35 PT2 Total Power Dissipation mW 175 TJ Junction Temperature ° C 150


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PDF NESG2031M05 OT-343 NESG2031M05 642e-15 751e-3 06e-3 4e-15 transistor nec 8772 nec 8772 transistor BR 8772 transistor BR 8772 nec 8772 NEC transistor 8772 MJE 4302 8772 nec transistor NESG2031M05-T1 C 5074 transistor
2011 - BD9355

Abstract: DE2815
Text: ), should be avoided. Resistance (Terminal A) (Terminal B) C Transistor (NPN) B E , (internal node) monitor OVP:VO7 monitor Conditions condition L=4.3µH (TOKO:DE4518C) C =22µF R1=390, R2=75k L=4.7µH (TOKO:DE2815) C =10µF R1=440, R2=200k Cc=12pF L=4.7µH (TOKO:DE2815) C =10µF R1=300, R2=600k L=4.7µH (TOKO:DE2815) C =10µF R1=300, R2=240k Vo (V) Vin (V) 2.5 3.6 4.2 5.0 2.5 Io_max (mA) 100 100 100 100 30 40 50 50 25 40 40 40 30 40 40 40 condition L=4.7µH (TOKO:DE2815) C =10µF R1=156k, R2=30k Cc


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PDF BD9355MWV R1120A BD9355 DE2815
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