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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR C 557 B Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - TRANSISTOR C 557 B

Abstract: operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 transistor 557 b B 557 PNP TRANSISTOR free BC557 of pnp transistor BC557 transistor bc558 features transistor c 557 transistor c 558
Text: Assignment 1 2 3 C B E C B E C B E C B E C B E C B E Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk 1 of 4 QW-R201-051. B BC556/ 557 /558 PNP SILICON TRANSISTOR , TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-051. B 3 of 4 BC556/ 557 /558 PNP SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD BC556/ 557 /558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER , 800 2 of 4 QW-R201-051. B Current Gain-Bandwidth Product,fT (MHz) Capacitance, C (pF


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PDF BC556/557/558 BC556, BC556L/BC557L/BC558L BC556G/BC557G/BC558G BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K TRANSISTOR C 557 B operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 transistor 557 b B 557 PNP TRANSISTOR free BC557 of pnp transistor BC557 transistor bc558 features transistor c 557 transistor c 558
2012 - transistor c 557

Abstract: TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR
Text: © 2012 Fairchild Semiconductor Corporation BC556/ 557 /558/559/560 Rev. B0 1 A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 www.fairchildsemi.com BC556/ 557 /558/559/560 - PNP Epitaxial Silicon Transistor , BC556/ 557 /558/559/560 - PNP Epitaxial Silicon Transistor October 2012 BC556/ 557 /558/559/560 PNP Epitaxial Silicon Transistor Features · Switching and Amplifier · High Voltage: BC556, VCEO = , . Emitter Absolute Maximum Ratings Symbol VCBO Ta = 25° C unless otherwise noted Parameter


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor c 557 TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR
2010 - operation of BC557 TRANSISTOR

Abstract: TRANSISTOR C 557 B BC557 SWITCHING TRANSISTOR transistor c 557 transistor 557 b B 557 PNP TRANSISTOR transistor bc558 features free BC557 of pnp transistor BC557 BC556
Text: -92 TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 C B E C B E C B E C B E C B E C B E Packing Tape Box Bulk Tape Box Bulk Tape Box Bulk 1 of 4 QW-R201-051. C BC556/ 557 /558 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Ta=25° C , unless otherwise specified , TRANSISTOR TYPICAL CHARACTERISTICS QW-R201-051. C 3 of 4 BC556/ 557 /558 PNP SILICON TRANSISTOR , UNISONIC TECHNOLOGIES CO., LTD BC556/ 557 /558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER


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PDF BC556/557/558 BC556, BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K BC556L-x-T92-B BC556L-x-T92-K operation of BC557 TRANSISTOR TRANSISTOR C 557 B BC557 SWITCHING TRANSISTOR transistor c 557 transistor 557 b B 557 PNP TRANSISTOR transistor bc558 features free BC557 of pnp transistor BC557 BC556
2004 - TRANSISTOR C 557 B

Abstract: transistor c 557 B 557 PNP TRANSISTOR transistor 557 b bc556 transistor Transistor Bc556 transistor c 558 ic 558 of pnp transistor BC557 PNP BC558
Text: UTC BC556/ 557 /558 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS , BC556/ 557 /558 PARAMETER Noise Figure NF PNP EPITAXIAL SILICON TRANSISTOR SYMBOL TEST CONDITIONS , RANK hFE A 110 - 220 B 200 ­ 450 C 420 - 800 UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-051,A UTC BC556/ 557 /558 TYPICAL CHARACTERISTICS PNP EPITAXIAL SILICON TRANSISTOR UTC , MAXIMUM RATINGS (Ta=25° C , unless otherwise specified) PARAMETER Collector-base voltage : BC556 : BC557


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PDF BC556/557/558 BC556, BC556 BC557 BC558 QW-R201-051 TRANSISTOR C 557 B transistor c 557 B 557 PNP TRANSISTOR transistor 557 b bc556 transistor Transistor Bc556 transistor c 558 ic 558 of pnp transistor BC557 PNP BC558
1999 - transistor bc556

Abstract: transistor bc 558 application transistor B 560 bc557 fairchild TRANSISTOR C 557 B transistor 557 b pnp bc559 transistor information of BC558 BC 557 PNP TRANSISTOR BC556
Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/ 557 /558/559/560 SWITCHING AND AMPLIFIER · HIGH VOLTAGE , CLASSIFICATION Classification A B C hFE 110-220 200-450 420-800 Rev. B ©1999 Fairchild Semiconductor Corporation BC556/ 557 /558/559/560 PNP EPITAXIAL SILICON TRANSISTOR , reasonably expected to cause the failure of the life the body, or ( b ) support or sustain life, or ( c ) whose , MAXIMUM RATINGS (TA=25° C ) ° Characteristic Symbol Collector-Base Capacitance : BC556 : BC557/560


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor bc556 transistor bc 558 application transistor B 560 bc557 fairchild TRANSISTOR C 557 B transistor 557 b pnp bc559 transistor information of BC558 BC 557 PNP TRANSISTOR BC556
1998 - IDG 600

Abstract: STMicroelectronics Krypton ST952 "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST75951 ST952TQF7 TQFP32 VTAC 4
Text: SEATING PLANE c Dimensions A A1 A2 B C D D1 D3 e E E1 E3 L L1 K Min. 0.05 1.35 , : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , external transistor switches and are sent to the internal transmit demodulator and receive modulator , hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton "caller ID" "type 2" hybrid BC 547 PIN DIAGRAM ST952TQF7 TQFP32 VTAC 4
1998 - IDG 600

Abstract: STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 ST75951 ST952 Krypton isolation D6510
Text: 24 17 E3 E1 E B 1 c Dimensions A A1 A2 B C D D1 D3 e E E1 E3 L L1 , : ST952TQF7 If CLID external transistor switch is enabled, a limited amount of current, less than 1mA, is , barrier, ST952 activates the off-hook or the CLID external transistor switch. LIM2 19 NC Ring , off-hook and CLID external transistor switches and are sent to the internal transmit demodulator and , phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP


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PDF ST952 TQFP32 ST952TQF7 ST952 ST75951 IDG 600 STMicroelectronics Krypton clid applications transistor 547 TQFP32 ST952TQF7 Krypton isolation D6510
1998 - BC 547 PIN DIAGRAM

Abstract: IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton ST952 pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557 TQFP32
Text: THIN QUAD FLAT PAQ (TQFP) A A1 A2 B C D D1 D3 e E E1 E3 L L1 Min. 0.05 1.35 0.30 , activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When


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PDF ST952 56Kbps TQFP32 ST952TQFP ST952 56Kbps ST75951 TQFP32 BC 547 PIN DIAGRAM IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557
2001 - TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2001 Fairchild Semiconductor Corporation Rev. A1, June , BC556/ 557 /558/559/560 BC556/ 557 /558/559/560 Switching and Amplifier · High Voltage: BC556 , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C , Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Noise Figure : BC556/ 557 /558 : BC559


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
2002 - of transistor bc558

Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2 , surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform when , BC556/ 557 /558/559/560 BC556/ 557 /558/559/560 Switching and Amplifier · High Voltage: BC556 , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 of transistor bc558 bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
2002 - BC557

Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2 , surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform when , BC556/ 557 /558/559/560 BC556/ 557 /558/559/560 Switching and Amplifier · High Voltage: BC556 , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC557 transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
2002 - BC559CTA

Abstract: bc560
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2 , surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform when , BC556/ 557 /558/559/560 BC556/ 557 /558/559/560 Switching and Amplifier · High Voltage: BC556 , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC559CTA bc560
2002 - transistor BC 458

Abstract: transistor BC 557 BC 458 transistor
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2 , surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform when , BC556/ 557 /558/559/560 BC556/ 557 /558/559/560 Switching and Amplifier · High Voltage: BC556 , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 transistor BC 557 BC 458 transistor
2002 - TRANSISTOR C 557 B

Abstract: bc560 transistor BC 458 Transistor B C 458 BC559 PSpice transistor BC559 transistor bc558 features BC558 PNP transistor download datasheet
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2 , surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose failure to perform when , BC556/ 557 /558/559/560 BC556/ 557 /558/559/560 Switching and Amplifier · High Voltage: BC556 , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR C 557 B bc560 transistor BC 458 Transistor B C 458 BC559 PSpice transistor BC559 transistor bc558 features BC558 PNP transistor download datasheet
2002 - transistor BC 458

Abstract: BC 458 transistor transistor bc557 TRANSISTOR BC 560 ic 558 BC558 PNP transistor TRANSISTOR BC 550 b BC559 BC560 transistor bc 558 pnp
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 , , (a) are intended for surgical implant into the body, or ( b ) support or sustain life, or ( c ) whose , BC556/ 557 /558/559/560 BC556/ 557 /558/559/560 Switching and Amplifier · High Voltage: BC556 , ) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ° C


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 BC 458 transistor transistor bc557 TRANSISTOR BC 560 ic 558 BC558 PNP transistor TRANSISTOR BC 550 b BC559 BC560 transistor bc 558 pnp
2001 - BC559

Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 , BC556/ 557 /558/559/560 BC556/ 557 /558/559/560 Switching and Amplifier · High Voltage: BC556 , ) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 ° C TSTG Storage Temperature -65 ~ 150 ° C Electrical Characteristics Ta=25° C unless otherwise


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC559 transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
2000 - transistor BC 458

Abstract: BC 458 transistor bc546 fairchild BC546 BC556 BC559 BC560 BC558 PNP transistor
Text: . Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , hFE Classification Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 , ( b ) support or sustain life, or ( c ) whose failure to perform when properly used in accordance with , BC556/ 557 /558/559/560 BC556/ 557 /558/559/560 Switching and Amplifier · High Voltage: BC556 , ) -100 mA PC Collector Dissipation 500 mW TJ Junction Temperature 150 ° C


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 BC 458 transistor bc546 fairchild BC546 BC556 BC559 BC560 BC558 PNP transistor
bc556

Abstract: No abstract text available
Text: : BC559, BC560 · C om plem ent to BC546 . BC 550 PNP EPITAXIAL SILICON TRANSISTOR TO -92 , ollector Base C apacitance N oise Figure : BC556/ 557 /558 : BC559/560 : BC559 : BC560 NF Sym bol IcBO h FE , 1.2 10 4 4 2 NF hF ECLASSIFICATION Classification A 110-220 B 200-450 C 420-800 h FE FAIRCHILD S E M IC O N D U C T O R TM © 19 99 Fairchild Sem iconductor Corporation BC556/ 557 /558/559 , P R O D U C T S H E R E IN T O IM P R O V E R E L IA B IL IT Y , F U N C T IO N O R D E S IG N . F A


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 bc556
C557B

Abstract: C558 transistor C556B c 557 b transistors BC 557C transistor BC 557B transistor C558 c558c BC 557 PNP TRANSISTOR circuits BC557C
Text: , lB = 0) V ( B R ) C E O B C 556 BC 557 BC558 C o llecto r-B ase Breakdown Voltage (IC = - 1 0 0 nAdc) BC 556 BC 557 B C 558 E m itte r-B a s e Breakdown Voltage (lg = - 1 0 0 iiAdc, Iq - 0) BC556 B C 557 B C 558 ' C E S B C 556 B C 557 BC 558 BC 556 BC 557 BC558 - - - - -2 .0 - 2 .0 - 2 .0 - - , C 557 B C 558 c ob IT 280 320 3 60 - MHz - Output Capacitance (V C B = - 1 0 V , lc = 0 , f , C 556 B C 557 /558 BC557A BC 556B /557B/558B BC557C 3.0 6.0 PF NF - - dB 2.0 2 .0


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PDF BC556 BC557 BC558B BC556 BC557 BC558 C557B C558 transistor C556B c 557 b transistors BC 557C transistor BC 557B transistor C558 c558c BC 557 PNP TRANSISTOR circuits BC557C
2000 - ic 7912

Abstract: 7912 transistor K 1352 TRANSISTOR C 557 B SCT595 BGB550 TRANSISTOR 7912 Ic D 1708 ag DATA SHEET OF IC 7912 7912 ic datasheet
Text: ®-45 technology 5 3 2 1 VPW05980 C , 4 Bias, 3 B ,1 5, E E ,2 Bias ,3 E, 2, 5 4, C B , 1 Description The BGB 550 is a silicon mirror biased RF transistor . The RF transistor is , in ar Mirror Biased Transistor P re MMIC W ir e le ss S i l ic o n D is c r e t e , soldering point to the PCB IBias IC Bias,3 C ,3 VCE IB B ,1 VEB E,2 Fig. 1: Symbol , 1 B 2 E 3 Bias E R Bias 5 C 4 Top View V Bias Bias-T


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PDF D-81541 BGB550 10max ic 7912 7912 transistor K 1352 TRANSISTOR C 557 B SCT595 TRANSISTOR 7912 Ic D 1708 ag DATA SHEET OF IC 7912 7912 ic datasheet
transistor NEC D 586

Abstract: transistor 3504 nec la 4628 nec 3504 ic nec 3504 transistor NEC D 587 Transistor C 4927 NEC JAPAN 3504 transistor on 4409 R/NEC 2505
Text: tg 5 3 2 10 30 150 -6 5 to +150 V V V mA mW ° C PIN CONNECTIONS 1. 2. 3. 4. Collector Emitter Base Emitter ° c Caution; This transistor uses high-frequency technology. Be careful not , DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD , i e | 2 = 12 d B T Y P . @ Vce = 2 V, Ic = 7 mA, f = 2 GHz PACKAGE DIMENSIONS (Units : mm) I , 25 ° C ) C ollector to Base Voltage C ollector to Em itter Voltage Em itter to Base Voltage C ollector


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PDF 2SC5180 2SC5180-T1 2SC5180-T2 transistor NEC D 586 transistor 3504 nec la 4628 nec 3504 ic nec 3504 transistor NEC D 587 Transistor C 4927 NEC JAPAN 3504 transistor on 4409 R/NEC 2505
1995 - "OPTIMUM SNUBBERS FOR POWER SEMICONDUCTORS"

Abstract: william mcmurray optimum snubbers power semiconductors McMurray SELECTION OF SNUBBERS AND CLAMPS TO OPTIMIZE THE DESIGN OF TRANSISTOR SWITCHING CONVERTERS Ultrafast RECTIFIER DIODES national FRP820 Designing RC snubbers fast recovery epitaxial diodes transistor RECTIFIER DIODES NATIONAL DIODE 10B3
Text: Rectifier Voltage Waveforms b ) Transistor and Rectifier Current Waveforms c ) Transistor Power Dissipation , transistor failure if they are not selected correctly One would assume that by now this rectifier diode , Input Voltage VIN National Semiconductor Application Note 557 Ralph E Locher January 1989 , in Figure 1a The solid lines in Figure 2a depict the switching behavior of the transistor switch , collector current of the transistor switch (IT in Figure 2a ) at the end of turn-on (time t2) has been


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transistor NEC D 587

Abstract: 3181 R33 transistor c 3181
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed , transistor has been applied small mini mold package. PACKAGE DIMENSIONS in millimeters 2.1 ± 0.1 , |S2ie|2 = 12 dBTYP . @ f = 1 GHz, Vce = 3 V, Ic = 7 mA C M d CO +i o o 00+ T c v J _L Small , CONNECTIONS 1. Emitter 2. Base 3. Collector 2S C 4227-T2 3 Kpcs/Reel. Embossed tape 8 mm wide. Pin 1


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PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 transistor NEC D 587 3181 R33 transistor c 3181
1994 - Power Semiconductor Applications Philips Semiconductors

Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
Text: transistor . Ptot maxK = 75 W Tjmax = 175 ° C Rthj-mb 2 K/W The maximum permissible power dissipation for , rectangular pulse loads: (a) short pulse duration ( b ) long pulse duration ( c ) single-shot pulse 8 , prolonged operation of a power transistor above its junction temperature rating is liable to result in , is not exceeded. Fig. 1 Heat transport in a transistor with power dissipation constant with , Tmb K 2 or by the maximum junction temperature Tjmax (Tmb K is usually 25° C and is the value of


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Not Available

Abstract: No abstract text available
Text: frequency at f = 100 MHz lg = 5 mA; —V q b = 10 V M E C H A N IC A L D A T A *T Dimensions in mm , SOT-23. B F 6 6 0 = LEp Pinning: 1 = base 2 = emitter 3 = collector 0.150 c MBB018 e TOP VIEW See also Soldering recommendations. April 1991 557 I 0 0 2 ^ 7 2 lb2 B A P X , PLANAR TRANSISTOR P-N-P transistor , in a microminiature plastic envelope; intended for use as , thin-film circuits. Q U IC K R E F E R E N C E D A T A Collector-base voltage (open emitter) “ v CBO


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PDF 0Q24b71 BF660
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