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Part ECAD Model Manufacturer Description Datasheet Download Buy Part
SCT3030AR SCT3030AR ECAD Model ROHM Semiconductor 650V, 70A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3060AR SCT3060AR ECAD Model ROHM Semiconductor 650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3105KL SCT3105KL ECAD Model ROHM Semiconductor 1200V, 24A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3017AL SCT3017AL ECAD Model ROHM Semiconductor 650V, 118A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3030KL SCT3030KL ECAD Model ROHM Semiconductor 1200V, 72A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET
SCT3080AL SCT3080AL ECAD Model ROHM Semiconductor 650V, 30A, THD, Trench-structure, Silicon-carbide (SiC) MOSFET

TRANSISTOR C 4460 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2006 - C4620

Abstract: TRANSISTOR C 4460 BTC4620D3
Text: : 2006.04.21 Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTC4620D3 Features · High , EEmitter EC B Absolute Maximum Ratings (Ta=25° C ) Parameter Collector-Base Voltage Collector-Emitter , Tstg mA W ° C ° C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C210D3 Issued Date : 2004.09.01 Revised Date : 2006.04.21 Page No. : 2/4 Characteristics (Ta=25° C , , Duty Cycle2% Classification Of hFE Rank Range BTC4620D3 C 40~80 D 60~120 E 100~200


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PDF C210D3 BTC4620D3 10mA/1mA. BTA1776D3 O-126ML UL94V-0 C4620 TRANSISTOR C 4460 BTC4620D3
2006 - B1424

Abstract: TRANSISTOR C 4460 TO126ML b142 BTB1424AD3 BTD2150AD3
Text: Page No. : 1/4 Low VCE(sat) PNP Epitaxial Planar Transistor BTB1424AD3 Features · Excellent , EEmitter EC B Absolute Maximum Ratings (Ta=25° C ) Parameter Collector-Base Voltage Collector-Emitter , W ° C ° C Note 1: Single pulse, Pw10ms, Duty Cycle30%. BTB1424AD3 CYStek Product , :2006.04.21 Page No. : 2/4 Characteristics (Ta=25° C ) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat , 0.026 0.034 0.046 0.054 0.018 0.024 0.307 0.323 0.425 0.441 DIM A A1 b b1 c D E


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PDF C817D3 BTB1424AD3 -100mA. BTD2150AD3 O-126ML UL94V-0 B1424 TRANSISTOR C 4460 TO126ML b142 BTB1424AD3 BTD2150AD3
2006 - D1805

Abstract: TRANSISTOR C 4460 TO126ML BTD1805 btd1805d3
Text: Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1805D3 Description The device is manufactured in NPN planar technology by using a "Base Island" layout. The resulting transistor shows , EEmitter BTD1805D3 TO-126ML E C B CYStek Product Specification CYStech Electronics Corp , Maximum Ratings (Ta=25° C ) Parameter Collector-Base Voltage (IE=0) Collector-Emitter Voltage (IB , Unit V V V A A W ° C /W ° C /W ° C ° C Note : 1. Single Pulse , Pw380µs,Duty2


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PDF C820D3 BTD1805D3 UL94V-0 D1805 TRANSISTOR C 4460 TO126ML BTD1805 btd1805d3
2009 - PLC Communication cables pin diagram

Abstract: RF amplifier antenna 125khz dpmr PMR446 circuit diagram of RF based voice communication RF 125khz receiver DE6181 circuit diagram of usb fm transmitter limiter-discriminator ATB010
Text: 446.0 to 446.2 MHz at 500mW Tx operation · Compact footprint: RF area = 45mm x 50mm · , diode and transistor to provide sufficient current to the PA control pins. Tx/Rx switch Circuitry is , transceiver Example Performance Specification Frequency range 446.0 to 446.2 MHz Channel spacing


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PDF ATB010 dPMR/PMR446 446MHz PMR446) DE6181 CMX7141) PE0002 500mW ATB010 PLC Communication cables pin diagram RF amplifier antenna 125khz dpmr PMR446 circuit diagram of RF based voice communication RF 125khz receiver DE6181 circuit diagram of usb fm transmitter limiter-discriminator
2008 - GSM repeater circuit using transistor

Abstract: No abstract text available
Text: Power Transistor RT243 Product Features Application • Frequency Range = 50MHz ~ 4GHz , Power Transistor RT243 Typical Specifications (Ta=+25℃) PARAMETER Symbol Specifications , rfsales@rfhic.com ▪ Version 5.3 Power Transistor RT243 Application Circuit for RT243(2500MHz , ▪ Version 5.3 Power Transistor RT243 S-Parameter @ VDS = +28V, IDq = 600mA, ZL=ZS , 5.181 77.7 0.009 -11.4 0.749 -178.3 0.7 0.948 -179.3 4.460 74.6 0.008


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PDF RT243 50MHz 43dBm 14GHz 45dBm 900MHz IMT-2000 WP-12 GSM repeater circuit using transistor
2006 - TRANSISTOR C 4460

Abstract: d2150a TO126ML D2150 BTD1857AD3 126ML
Text: Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD1857AD3 Description · High BVCEO · , BTD1857AD3 TO-126ML BBase CCollector EEmitter E C B Absolute Maximum Ratings (Ta=25° C ) Parameter , 20 150 -55~+150 V V V A A W W ° C ° C PD Tj Tstg CYStek Product Specification , No. : 2/4 Characteristics (Ta=25° C ) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on , c D E Millimeters Min. Max. 3.000 3.400 1.800 2.200 0.660 0.860 1.170 1.370 0.450


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PDF C855D3 BTD1857AD3 BTB1236AD3 O-126ML UL94V-0 TRANSISTOR C 4460 d2150a TO126ML D2150 BTD1857AD3 126ML
2005 - d2150a

Abstract: TRANSISTOR C 4460 D2150 BTB1424AD3 BTD2150AD3
Text: : 2005.11.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features · Low VCE , EEmitter E C B Absolute Maximum Ratings (Ta=25° C ) Parameter Collector-Base Voltage Collector-Emitter , ° C ° C Note : Pulse test, pulse width380µs, duty cycle2%. BTD2150AD3 CYStek Product , CYStech Electronics Corp. Characteristics (Ta=25° C ) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat , 0.441 DIM A A1 b b1 c D E Millimeters Min. Max. 3.000 3.400 1.800 2.200 0.660 0.860


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PDF C848D3 BTD2150AD3 200mA BTB1424AD3 O-126ML UL94V-0 d2150a TRANSISTOR C 4460 D2150 BTB1424AD3 BTD2150AD3
TRANSISTOR C 4460

Abstract: No abstract text available
Text: Temperature “R” Series Burn-In Temperature Maximum +17 Volts +13 dBm -55 to +125° C -62 to +150° C +125° C Thermal Characteristics1 9j c Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AU @ 90° C ) F 70/75° C /W2 90/321 mW2 7/22°C2 1,276,000 , Guaranteed Specifications Tc = 25° C Tc = 0 to 50° C Tc = -5 5 to +85° C Unit Characteristic 5-500 , q u en cy , M H z Pow er O utput 300 400 F re q u e n c y , M H z Input V SW R O


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PDF 001072b TRANSISTOR C 4460
C 4804 transistor

Abstract: No abstract text available
Text: +125° C 0j o . 7 5 W C /W Active Transistor Power , otherwise noted) — NF Pi dB — — IPs IPs - HP* Id Tc = 0° to 50“ C To = -5 5 “ to +85° C 5-500 23.0 ±1.0 7.0 +12.0 2.0:1 2.0:1 5-500 23,0 ±1.0 7.0 +12.0 2.0:1 , Specifications Typical To = 2S« C Characteristic Symbol — — — Unit MHz dB dB dB dBm , noted)_ ._ SCHEMATIC KEY: +25” C — -+85°C-— 55° C


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PDF 50-ohm C 4804 transistor
1996 - C 4804 transistor

Abstract: HP2 6500 teledyne cougar uto 104
Text: +13 dBm ­55 to +125° C ­62 to +150° C +125 ° C RFIN RFOUT Thermal Characteristics1 JC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90 ° C ) 70/75° C /W2 90/321 mW2 7/22° C 2 1,276,000 Hrs. Notes: 1. Values refer to first and second stages , Guaranteed Specifications TC = 25° C TC = 0 to 50° C TC = ­55 to +85° C 5-500 25.5 ± 0.5 3.5 +13.5 <1.2:1 <1.5:1 , (@ +15 VDC unless otherwise noted) Noise Figure, dB Key: +25° C +85° C -55 ° C Gain, dB Gain 27


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1995 - Not Available

Abstract: No abstract text available
Text: +125° C –62 to +150° C +125° C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90° C ) 70/75° C /W2 90/321 mW 2 , Specifications TC = 25° C TC = 0 to 50° C TC = –55 to +85° C Characteristic 5-500 23.0 ±1.0 7.0 , €” — Typical Performance Over Temperature (@ +15 VDC unless otherwise noted) Key: +25° C +85° C -55° C Gain Noise Figure 4.0 Noise Figure, dB Gain, dB 27 26 25 24 3.5 3.0 2.5 2.0


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PDF 500MHz 5963-2518E
1996 - Not Available

Abstract: No abstract text available
Text: “R” Series Burn-In Temperature Maximum +17 Volts +13 dBm –55 to +125° C –62 to +150° C +125° C Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90° C ) 70/75° C /W2 90/321 mW2 7/22° C 2 1,276,000 , Guaranteed Specifications TC = 25° C TC = 0 to 50° C TC = –55 to +85° C Characteristic Frequency Range , : +25° C +85° C -55 °C Gain Noise Figure 4.0 Noise Figure, dB Gain, dB 27 26 25 24


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1999 - y6 smd transistor

Abstract: y4 smd y1 smd transistor e2 smd transistor smd code Y1 si 4460 SMD Transistor Y6 transistor smd Y2 Y1 smd 5962F9853501VEC
Text: -INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 1 File Number 4460 ACTS138MS , Case Density: <2.0 x 105 A/cm2 Transistor Count: 256 SUBSTRATE POTENTIAL: Unbiased Insulator


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PDF ACTS138MS MIL-PRF-38535 ACTS138MS 25Micron 100MeV/ y6 smd transistor y4 smd y1 smd transistor e2 smd transistor smd code Y1 si 4460 SMD Transistor Y6 transistor smd Y2 Y1 smd 5962F9853501VEC
2011 - MGF4953B

Abstract: MGF4953B-70
Text: super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in K band amplifiers , .1 APPLICATION C to K band low noise amplifiers QUALITY GRADE GG MITSUBISHI Proprietary Not to be , temperature (Ta=25C ) Ratings -3 -3 60 50 125 -55 to +125 (Ta=25C ) Unit V V mA mW C C ELECTRICAL , Leadless ceramic package TYPICAL CHARACTERISTICS (Ta=25° C ) ID vs. V DS 50 Ta=25 V GS=-0.1V /STEP , -2.2 -12.5 -22.5 (mag) 4.537 4.502 4.472 4.460 4.431 4.394 4.311 4.230 4.094 3.943 3.826 3.740 3.622


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PDF MGF4953B MGF4953B 20GHz 000pcs/reel 000pcs/reel MGF4953B-01) MGF4953B-70) MGF4953B-70
2006 - TRANSISTOR C 4460

Abstract: InGaAs HEMT mitsubishi MGF4953B MGF495
Text: Mobility Transistor ) is designed for use in K band amplifiers. The lead-less ceramic package assures , associated gain @ f=20GHz Gs = 10.5dB (Typ.) APPLICATION C to K band low noise amplifiers Fig , VGSO Parameter Gate to drain voltage (Ta=25° C ) Ratings Unit -4 V Gate to source , Channel temperature 125 ° C Tstg Storage temperature -65 to +125 Mitsubishi Electric , , (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. ° C


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PDF MGF4953B MGF4953B 20GHz 3000pcs TRANSISTOR C 4460 InGaAs HEMT mitsubishi MGF495
2005 - STR W 5753 a

Abstract: str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015 CGH27015F 44019
Text: ) high electron mobility transistor designed specifically for high efficiency, high gain and wide , applications. The transistor is available in both screwdown, flange and solder-down, pill packages. Package , Parameter (TC = 25° C ) 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units Small Signal , Absolute Maximum Ratings (not simultaneous) at 25° C Case Temperature Parameter Symbol Rating , Volts Power Dissipation PDISS 7 Watts Storage Temperature TSTG -55, +150 ° C


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PDF CGH27015 CGH27015 CGH2701 27015P STR W 5753 a str w 5753 str 5753 CGH27015-TB 10UF 470PF CGH27015F 44019
2006 - Not Available

Abstract: No abstract text available
Text: Electron Mobility Transistor ) is designed for use in K band amplifiers. The lead-less ceramic package , associated gain @ f=20GHz Gs = 10.5dB (Typ.) APPLICATION C to K band low noise amplifiers Fig , VGSO Parameter Gate to drain voltage (Ta=25° C ) Ratings Unit -4 V Gate to source , ELECTRICAL CHARACTERISTICS Synbol Parameter (Ta=25° C ) Test conditions Limits Unit MIN , Package) TYPICAL CHARACTERISTICS (Ta=25° C ) ID vs. VDS ID VS. VGS 50 50 Ta=25℃ V DS


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PDF MGF4953B MGF4953B 20GHz 3000pcs June/2006
2011 - Not Available

Abstract: No abstract text available
Text: super-low noise InGaAs HEMT (High Electron Mobility Transistor ) is designed for use in K band amplifiers , .) Fig.1 APPLICATION C to K band low noise amplifiers QUALITY GRADE MITSUBISHI Proprietary , Storage temperature -55 to +125 C PT Tch Tstg Parameter (Ta=25 C ) ELECTRICAL CHARACTERISTICS Symbol Parameter Ratings Unit -3 V (Ta=25 C ) Test conditions Limits , =25° C ) ID vs. V DS ID VS. V GS 50 50 Ta=25 V DS=2V 40 40 Drain Current ID(mA


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PDF MGF4953B MGF4953B 20GHz 000pcs/reel MGF4953B-01) MGF4953B-70al
2006 - elna capacitor 22uf

Abstract: No abstract text available
Text: Spectrum @ 400 kHz @ 600 kHz All published data at TCASE = 25° C unless otherwise indicated Symbol Gps , Temperature Total Device Dissipation Above 25° C derate by Storage Temperature Range Thermal Resistance (TCASE = 70° C , 100 W CW) TSTG RJC Symbol VDSS VGS TJ PD Value 65 ­0.5 to +12 200 487 2.78 ­40 to +150 0.36 Unit V V ° C W W/° C ° C ° C /W Ordering Information Type PTFA041001E PTFA041001F , VDD = 28 V, IDQ = 750 mA, = 470 MHz TCASE = 25° C TCASE = 90° C 24 25 23 21 70 60 IDQ = 1000


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PDF PTFA041001E PTFA041001F 100-watt, H-30248-2 PTFA041001FT H-31248-2 elna capacitor 22uf
2007 - cgh40045

Abstract: str 5 q 0765
Text: 's CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high , , LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a , 2.35 28.3 10.0 (TC = 25° C ) of Demonstration Amplifier 2.6 GHz 14.3 2.13 26.7 7.0 2.7 GHz 14.5 , simultaneous) at 25° C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage , Volts ° C ° C mA A ° C in-oz ° C /W ° C Conditions 25° C 25° C 25° C 25° C RJC TC 85° C 30 seconds


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PDF CGH27060F CGH27060F CGH2706 cgh40045 str 5 q 0765
2007 - Not Available

Abstract: No abstract text available
Text: is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high , , 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a , 2.3-2.7GHz Parameter (TC = 25˚ C ) of Demonstration Amplifier 2.3 GHz 2.4 GHz 2.5 GHz 2.6 , change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚ C Case , Volts 25˚ C Gate-to-Source Voltage VGS -10, +2 Volts 25˚ C Storage Temperature


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PDF CGH27060F CGH27060F CGH2706
2007 - CGH27060

Abstract: str 16006 CGH40045F CGH27015 CGH27060F JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw
Text: 's CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for , , Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is , Performance Over 2.3-2.7GHz Parameter (TC = 25° C ) of Demonstration Amplifier 2.3 GHz 2.4 GHz , Maximum Ratings (not simultaneous) at 25° C Case Temperature Parameter Symbol Rating Units , Temperature TSTG -65, +150 ° C Operating Junction Temperature TJ 225 ° C Maximum Forward


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PDF CGH27060F CGH27060F CGH2706 CGH27060 str 16006 CGH40045F CGH27015 JESD22 tRANSISTOR 2.7 3.1 3.5 GHZ cw
2007 - str 5 q 0765

Abstract: No abstract text available
Text: is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high , , LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a , 2.35 28.3 10.0 (TC = 25° C ) of Demonstration Amplifier 2.6 GHz 14.3 2.13 26.7 7.0 2.7 GHz 14.5 , without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25° C Case , Rating 84 -10, +2 -65, +150 225 15 6 245 80 2.8 -40, +150 Units Volts Volts ° C ° C mA A ° C in-oz ° C /W


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PDF CGH27060F CGH27060F CGH2706 str 5 q 0765
2007 - str 16006

Abstract: 44019
Text: 's CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high , , LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is supplied in a , 2.35 28.3 10.0 (TC = 25° C ) of Demonstration Amplifier 2.6 GHz 14.3 2.13 26.7 7.0 2.7 GHz 14.5 , simultaneous) at 25° C Case Temperature Parameter Drain-Source Voltage Gate-to-Source Voltage Storage , Rating 84 -10, +2 -65, +150 225 15 245 80 2.8 -40, +150 Units Volts Volts ° C ° C mA ° C in-oz ° C /W ° C


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PDF CGH27060F CGH27060F CGH2706 str 16006 44019
2007 - str 5 q 0765

Abstract: CGH27060 str 16006 CGH27060F 10UF 470PF CGH27015 JESD22
Text: 's CGH27060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for , , Comms, 3G, 4G, LTE, 2.3-2.9GHz WiMAX and BWA amplifier applications. The unmatched transistor is , Performance Over 2.3-2.7GHz Parameter (TC = 25° C ) of Demonstration Amplifier 2.3 GHz 2.4 GHz , Maximum Ratings (not simultaneous) at 25° C Case Temperature Parameter Symbol Rating Units , Temperature TSTG -65, +150 ° C Operating Junction Temperature TJ 225 ° C Maximum Forward


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PDF CGH27060F CGH27060F CGH2706 str 5 q 0765 CGH27060 str 16006 10UF 470PF CGH27015 JESD22
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