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Part Manufacturer Description Datasheet Download Buy Part
LTC1177CSW Linear Technology IC BUF OR INV BASED MOSFET DRIVER, PDSO18, 0.300 INCH, PLASTIC, SO-18, MOSFET Driver
LTC1177IN-5 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDIP18, 0.300 INCH, PLASTIC, DIP-18, MOSFET Driver
LTC1177IN-12 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDIP18, 0.300 INCH, PLASTIC, DIP-18, MOSFET Driver
LTC1177CSW-5 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDSO28, 0.300 INCH, PLASTIC, SOP-28, MOSFET Driver
LTC1177ISW-5 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDSO28, 0.300 INCH, PLASTIC, SOP-28, MOSFET Driver
LTC1177CN-5 Linear Technology IC 0.62 A BUF OR INV BASED MOSFET DRIVER, PDIP18, 0.300 INCH, PLASTIC, DIP-18, MOSFET Driver

TRANSISTOR C 1177 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TRANSISTOR C 1177

Abstract: No abstract text available
Text: and reduced wafer costs. The transistor layout rules themselves are not ▼ A L C A , : -55° C to 125° C • Pow er Supply (operation): 4 .5 - 15 V digital 4 .5 - 18 - 4 0 V analog 100 V , : -55° C to + 125° C Operation of digital and analog functions at low supply voltage (e.g. 3V) is , (V ^ + 0 .5 V) Storage Temperature (Ceramic): -65° C to 150° C Note: Stresses above those listed , , which contains all the information necessary to design a circuit. C t w ill be determined by the


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PDF MTC-3200 TRANSISTOR C 1177
2011 - SUS603

Abstract: DPH-L100 DPC-L100 panasonic sensor ce dp transistor k 3562 sunx dp 80
Text: . (IEC) The DPC-L100 and DPH-L100 can accommodate media at temperatures of up to 125° C (10 MPa and 50 , . Product line System accuracy: ±1 % F.S. (at 23° C ) (Throughout operating ambient temperature range: ±2 , . Comparative output DPC-L101 NPN open-collector transistor * CN-66A-C2 (Connector attached cable 2 m 6.562 ft) is attached. DPC-L101-P PNP open-collector transistor Type without connector attached , ° C +73.4 ±35 °F) ±2.0 % F.S. (at -20 to 70 ° C -4 to +158 °F) (including linearity, hysteresis and


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PDF DPC-L100 DPH-L100 CN-66A-C2 CN-66A-C5 CE-DPHL100-5 SUS603 panasonic sensor ce dp transistor k 3562 sunx dp 80
2009 - 150w darlington transistor to3 package

Abstract: LE17 MJ4035 TRANSISTOR C 1177
Text: TRANSISTOR MJ4035 ELECTRICAL CHARACTERISTICS (TC = 25° C unless otherwise stated) Symbols Parameters , SILICON DARLINGTON NPN TRANSISTOR MJ4035 · Monolithic Darlington Configuration With , ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg , Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 100V 100V 5V 16A 0.5A 150W 0.86W/° C -65 to +200° C -65 to +200° C


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PDF MJ4035 300us, O-204AA) 150w darlington transistor to3 package LE17 MJ4035 TRANSISTOR C 1177
Not Available

Abstract: No abstract text available
Text: TRANSISTOR MJ4035 ELECTRICAL CHARACTERISTICS (TC = 25° C unless otherwise stated) Symbols Parameters , SILICON DARLINGTON NPN TRANSISTOR MJ4035 • Monolithic Darlington Configuration With , ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg , Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 100V 100V 5V 16A 0.5A 150W 0.86W/°C -65 to +200° C -65 to


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PDF MJ4035 300us, O-204AA)
MJ413

Abstract: MJ431 MJ450
Text: SILICON TRANSISTOR . designed for high-current switching and general purpose amplifier applications. • Low Saturation Voltage - VcE(sat) " 1 0 Vdc @ < C = 10 Adc • DC Current Gain - hpg = 20 (Min) @ Iq - , Collector Current - Continuous ic 30 Adc Ban Current 'B 5.0 Adc Total Device Dissipation 9 Tc " 25° C Derate above 25° C PD 150 0.86 Watts W/°C Operating and Storage Junction Temperature Range Tj.Tjtg -65 , 20 VC£, COLLECTOR-EMITTER VOLTAGE (VOLTS) 30 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 150


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PDF MJ431 MJ413 MJ450 40Vdc, MJ431 MJ450
2009 - 2N4915

Abstract: LE17 8302
Text: 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N4915 ELECTRICAL CHARACTERISTICS (TC = 25° C unless , SILICON EPITAXIAL NPN TRANSISTOR 2N4915 · Low Collector Saturation Voltage. · Hermetic , · Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated , Emitter ­ Base Voltage Continuous Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 80V 80V 5V 5A 1.0A 87.5W


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PDF 2N4915 O-204AA) 2N4915 LE17 8302
2013 - Not Available

Abstract: No abstract text available
Text: NPN TRANSISTOR BUX10 ELECTRICAL CHARACTERISTICS (TC = 25° C unless otherwise stated) Symbols , SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX10 • High Current Capability. • Hermetic , Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEX VCEO VEBO , Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction , +200° C -65 to +200° C THERMAL PROPERTIES Symbols Parameters RθJC Max. Thermal


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PDF BUX10 O-204AA)
2009 - BUX11

Abstract: LE17
Text: NPN TRANSISTOR BUX11 ELECTRICAL CHARACTERISTICS (TC = 25° C unless otherwise stated) Symbols , SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 · High Current Capability. · Hermetic TO3 , Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM , Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 250V 250V 200V 7V 20A 25A 4A 110W 0.63W/° C -65 to +200° C -65 to


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PDF BUX11 O-204AA) BUX11 LE17
2009 - 2N4913

Abstract: LE17
Text: 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N4913 ELECTRICAL CHARACTERISTICS (TC = 25° C unless , SILICON EPITAXIAL NPN TRANSISTOR 2N4913 · Low Collector Saturation Voltage. · Hermetic , · Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated , Emitter ­ Base Voltage Continuous Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 40V 40V 5V 5A 1.0A 87.5W


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PDF 2N4913 O-204AA) 2N4913 LE17
Not Available

Abstract: No abstract text available
Text: SILICON EPITAXIAL NPN TRANSISTOR 2N4913 • Low Collector Saturation Voltage. â , Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise , Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 40V 40V 5V 5A 1.0A 87.5W 0.5W/°C -65 to +200° C -65 to +200° C THERMAL PROPERTIES Symbols Parameters


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PDF 2N4913 O-204AA)
Not Available

Abstract: No abstract text available
Text: SILICON EPITAXIAL NPN TRANSISTOR 2N4915 • Low Collector Saturation Voltage. â , Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise , Voltage Emitter – Base Voltage Continuous Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 80V 80V 5V 5A 1.0A 87.5W 0.5W/°C -65 to +200° C -65 to +200° C THERMAL PROPERTIES Symbols Parameters


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PDF 2N4915 O-204AA)
2010 - Not Available

Abstract: No abstract text available
Text: TRANSISTOR 2N6059 ELECTRICAL CHARACTERISTICS (TC = 25° C unless otherwise stated) Symbols ICEO ICEX IEBO V , SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 · · · High Current Capability. Hermetic TO3 Metal package. Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated , Voltage Continuous Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 100V 100V 5V 12A 0.2A 150W 1.00W/° C -55 to +175° C -55


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PDF 2N6059 O-204AA)
Not Available

Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BDY24 • High Power • Hermetic TO-3 Metal Package â , MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector , Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 100V 90V 10V 6A 3A 80W 0.45W/°C -65 to +200° C -65 to +200° C THERMAL PROPERTIES Symbols Parameters R1JC Max. Thermal Resistance, Junction To


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PDF BDY24 O-204AA)
2009 - 2N4914

Abstract: LE17
Text: 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR 2N4914 ELECTRICAL CHARACTERISTICS (TC = 25° C unless , SILICON EPITAXIAL NPN TRANSISTOR 2N4914 · Low Collector Saturation Voltage. · Hermetic , · Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated , Emitter ­ Base Voltage Continuous Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 60V 60V 5V 5A 1.0A 87.5W


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PDF 2N4914 O-204AA) 2N4914 LE17
2011 - BUX39

Abstract: transistor 110v
Text: SILICON EPITAXIAL NPN TRANSISTOR BUX39 · · · · High Current Capability. Hermetic TO3 Metal package , ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEX VCER VCEO VEBO IC ICM IB PD TJ Tstg , 7V 30A 40A 6A 120W 0.68W/° C -65 to +200° C -65 to +200° C tp = 10ms TC = 25° C Derate Above 25° C , Units ° C /W Semelab Limited reserves the right to change test conditions, parameter limits and , 3 Website: http://www.semelab-tt.com SILICON EPITAXIAL NPN TRANSISTOR BUX39 ELECTRICAL


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PDF BUX39 O-204AA) BUX39 transistor 110v
2009 - 2N4906

Abstract: No abstract text available
Text: SILICON EPITAXIAL PNP TRANSISTOR 2N4906 · · · Low Collector Saturation Voltage. Hermetic TO3 Metal , Available · ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ , Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range -80V -80V -5V -5A -1.0A 87.5W 0.5W/° C -65 to +200° C -65 to +200° C THERMAL , Units ° C /W Semelab Limited reserves the right to change test conditions, parameter limits and


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PDF 2N4906 O-204AA) 2N4906
Not Available

Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package â , MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector , Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 180V 120V 7V 12A 5A 60W 0.35W/°C -65 to +200° C -65 to +200° C THERMAL PROPERTIES Symbols Parameters R1JC Max. Thermal Resistance, Junction To


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PDF BDY54 O-204AA)
Not Available

Abstract: No abstract text available
Text: MULTI-EPITAXIAL NPN TRANSISTOR BUX11 ELECTRICAL CHARACTERISTICS (TC = 25° C unless otherwise stated) Symbols , SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX11 • High Current Capability. • Hermetic , Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEX VCEO VEBO , Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction , +200° C -65 to +200° C THERMAL PROPERTIES Symbols Parameters R1JC Min. Typ. Thermal


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PDF BUX11 O-204AA)
2012 - NPN Transistor 500V to3

Abstract: NPN Transistor 10A 400V to3
Text: POWER SWITCHING TRANSISTOR BUX45X ELECTRICAL CHARACTERISTICS (TC = 25° C unless otherwise stated , SILICON NPN POWER SWITCHING TRANSISTOR BUX45X · · · High Voltage, High Power, Fast Switching , Available · ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEX VCEO VEBO IC ICM , Voltage Emitter ­ Base Voltage Continuous Collector Current Peak Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 500V


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PDF BUX45X O-204AA) NPN Transistor 500V to3 NPN Transistor 10A 400V to3
2010 - TRANSISTOR BDX

Abstract: pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR BDX66C Transistor 150w darlington transistor to3 package BDX66B Darlington Silicon Power Transistor
Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C · Hermetic Metal TO3 Package. · , 1 of 3 PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C ELECTRICAL CHARACTERISTICS (TC , DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C MECHANICAL DATA Dimensions in mm (inches) 25.15 , ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCEO VCBO VEBO ICM IB PD TJ Tstg , Current TC = 25° C Total Power Dissipation at De-rate Linearly Above 25° C Junction Temperature Range


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PDF BDX66 -100V -120V O-204AA) TRANSISTOR BDX pnp 150w darlington transistor to3 package BDX66 BDX66C transistor bdx66 BDX66B TRANSISTOR BDX66C Transistor 150w darlington transistor to3 package BDX66B Darlington Silicon Power Transistor
Not Available

Abstract: No abstract text available
Text: PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C • Hermetic Metal TO3 Package. â , Number 8760 Issue 1 Page 1 of 3 PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C , Document Number 8760 Issue 1 Page 2 of 3 PNP DARLINGTON SILICON POWER TRANSISTOR BDX 66, A, B, C , ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCEO VCBO VEBO ICM IB PD TJ Tstg , Base Current TC = 25° C Total Power Dissipation at De-rate Linearly Above 25° C Junction


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PDF BDX66 -100V -120V O-204AA)
Not Available

Abstract: No abstract text available
Text: SILICON EPITAXIAL NPN TRANSISTOR BUX39 • High Current Capability. • Hermetic TO3 , €¢ Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEX , = 10ms TC = 25° C Derate Above 25° C TJ Tstg Junction Temperature Range Storage Temperature Range 120V 120V 110V 90V 7V 30A 40A 6A 120W 0.68W/°C -65 to +200° C -65 to +200° C , Document Number 9312 Issue 1 Page 1 of 3 SILICON EPITAXIAL NPN TRANSISTOR BUX39 ELECTRICAL


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PDF BUX39 O-204AA)
2009 - BUX12

Abstract: LE17
Text: MULTI-EPITAXIAL NPN TRANSISTOR BUX12 ELECTRICAL CHARACTERISTICS (TC = 25° C unless otherwise stated) Symbols , SILICON MULTI-EPITAXIAL NPN TRANSISTOR BUX12 · High Current Capability. · Hermetic TO3 , Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEX , Peak Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 300V 300V 250V 7V 20A 25A 4A 110W 0.63W/° C


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PDF BUX12 O-204AA) BUX12 LE17
Not Available

Abstract: No abstract text available
Text: SILICON EPITAXIAL PNP TRANSISTOR 2N5883 • High Voltage, Low Saturation Voltages. â , €¢ Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEO , €“ Base Voltage Continuous Collector Current Peak Collector Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range -60V -60V -5V -25A -50A -7.5A 200W 1.14W/°C -65 to +200° C -65 to +200° C THERMAL PROPERTIES


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PDF 2N5883 O-204AA)
2013 - Not Available

Abstract: No abstract text available
Text: SILICON NPN TRANSISTOR BDY54 • High Power • Hermetic TO-3 Metal Package â , MAXIMUM RATINGS (TC = 25° C unless otherwise stated) VCBO VCEO VEBO IC IB PD TJ Tstg Collector , Current Base Current TC = 25° C Total Power Dissipation at Derate Above 25° C Junction Temperature Range Storage Temperature Range 180V 120V 7V 12A 5A 60W 0.35W/°C -65 to +200° C -65 to +200° C THERMAL PROPERTIES Symbols Parameters RθJC Max. Thermal Resistance, Junction To


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PDF BDY54 O-204AA)
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