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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR BJ 131-6 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1997 - transistor 131-6

Abstract: MPS1907A
Text: U U PIN FUNCTIONS SW (Pin 5): Collector of NPN Power Transistor . Keep traces at this pin as , transistor Q1 is cycled on and off by the oscillator forcing current through the inductor to alternately , Resistor Note: DC Current is the Peak Switch Current if the Power Transistor had Zero Turn-Off Delay , occur due to turn-off delay of the power transistor . This turn-off delay is approximately 300ns. Peak , , current overshoot due to power transistor turn-off delay will be a significant portion of peak current


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PDF LT1316 500mA 300mV 200mA LT1307 600kHz LTC1440/1/2 LTC1516 LT1521 434-0507q transistor 131-6 MPS1907A
1997 - transistor 131-6

Abstract: MPS1907A MBR0540LT1 LQH3C220K04 131-6 transistor LT1316CS8 LT1316CMS8 LQH3C470 Sanyo OS-CON capacitors LTCD MARKING
Text: 100 1316 G10 LT1316 U U U PIN FUNCTIONS SW (Pin 5): Collector of NPN Power Transistor , limited to 6.3µs. Power transistor Q1 is cycled on and off by the oscillator forcing current through the , Note: DC Current is the Peak Switch Current if the Power Transistor had Zero Turn-Off Delay LT1316 , due to turn-off delay of the power transistor . This turn-off delay is approximately 300ns. Peak , levels, current overshoot due to power transistor turn-off delay will be a significant portion of peak


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PDF LT1316 500mA 300mV 500mA LT1304 200mA LT1307 600kHz LTC1440/1/2 LTC1516 transistor 131-6 MPS1907A MBR0540LT1 LQH3C220K04 131-6 transistor LT1316CS8 LT1316CMS8 LQH3C470 Sanyo OS-CON capacitors LTCD MARKING
transistor f420

Abstract: transistor BJ 115 ZT 5551 t514 TRANSISTOR F420 transistor transistor bt 667 2SK67A T010 TCA561 TS80
Text:  Junction Field Effect Transistor 2SK67A ECM <4 > - X ^Mm N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter OlW^iTt. o ECM^f >t11-or-h • ir— Yi&iXfr' tH&T'è it , III f íí BJ E T I 1 * 9 ^Srfi^niTZTI 8 8* 6* i o trn, te ifi tò * T § 1 * 2 2 msvv^sy « ¡A rtr •P £ >* ai 2 T i 6 * ifeCti&Mft tr;U ff * í í BT E T I 1 * 2 *? [S] iti B 2. tb bj - i *jfe - 2 , * rfi E -|> » 2 T I 1 * «>.(/A'HitS/E t^U >* I il «r II i i 3(*it';u * m 'h Bj 3 * ^(^ftffi^-íp t';u


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PDF 2SK67A t11-or-h t1780 transistor f420 transistor BJ 115 ZT 5551 t514 TRANSISTOR F420 transistor transistor bt 667 2SK67A T010 TCA561 TS80
transistor 1Bs

Abstract: 1BS transistor STD-S83C
Text: SIEMENS HYB 51410Ü BJ /BT -50/-60/-70 4 194 304 x 1 - Bit Dynamic RAM HYB 51440Û BJ /BT -50/-60/-70 1 048 576 X 4 - Bit Dynamic RAM INFORMATION NOTE Electro Static Discharge (ESD) 9.92 lnlo4m1i , basic ESD protection is a fast operating input protection structure (field oxide transistor with punch , njie is applied tor the input protection device, the pass transistor and the output driver. ESD , Transistor ZVT Zero Voit Transistor Rriif Diffusion Resistor Layout of 4M-DRAM input protection circuit


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PDF HYB514100SJ/ST HYB5144 883C1 /-4000V transistor 1Bs 1BS transistor STD-S83C
transistor 1Bs

Abstract: 1BS transistor siemens elektronik
Text: SIEMENS HYB 51410Ü BJ /BT -50/-60/-70 4 194 304 x 1 - Bit Dynamic RAM HYB 51440Û BJ /BT -50/-60/-70 1 048 576 X 4 - Bit Dynamic RAM INFORMATION NOTE Electro Static Discharge (ESD) 9.92 lnlo4m1i , basic ESD protection is a fast operating input protection structure (field oxide transistor with punch , njie is applied tor the input protection device, the pass transistor and the output driver. ESD , 2 SIEMENS 4M-DRAM input protection circuit: FOX Field Oxide Transistor ZVT Zero Volt Transistor


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PDF HYB514100SJ/ST HYB5144 883C1 /-4000V transistor 1Bs 1BS transistor siemens elektronik
TRANSISTOR BJ 121

Abstract: characteristical do transistor 2sd2553 2SD2553 2SC2482 2-16E3A
Text: TOSHIBA 2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV Unit in mm HIGH SPEED SWITCHING APPLICATIONS High Voltage : VcbO = 1700 v Low Saturation Voltage : Vqe (sa^) = 5 V (Max.) High Speed : tf = 0.3 jus (Typ , 0.1 0.3 1 3 COLLECTOR CURRENT IQ (A) 10 H O > O < H J O > BJ H H H H O > O < H J O > BJ H H H H O > O < H J O > BJ H H H 0 0.4 0.8 1.2 1.6 2.0 2.4 BASE CURRENT IB (A) VCE - IB


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PDF 2SD2553 TRANSISTOR BJ 121 characteristical do transistor 2sd2553 2SD2553 2SC2482 2-16E3A
power supply for magnetron

Abstract: Magnetron 1.5 kW magnetron 60 kw diode M4 J055 G7L-2A-TUB G7L-2A-P magnetron* -coaxial r9051158 T-12
Text: -2A-T G7L-2A-B - SPST-NO G7L-1A-TJ G7L-1A- BJ - DPST-NO G7L-2A-TJ G7L-2A- BJ , -1A-B Yes Yes No Yes Yes No G7L-2A-B Yes Yes No G7L-2A- BJ Screw terminals P7LF-06 Front-con necting Socket G7L-1A- BJ DPST-NO P7LF-D DIN Track Mounting Adapter , Yes No Applicable Relay Name Model G7L-1A-T/G7L-1A-TJ/G7L-1A-B/G7L-1A- BJ E-bracket R99-07 G7L-2A-T/G7L-2A-TJ/G7L-2A-B/G7L-2A- BJ Adapter P7LF-D G7L-1A-T/G7L-1A-TJ/G7L


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PDF UL94V-0-qualifying) J055-E1-3A power supply for magnetron Magnetron 1.5 kW magnetron 60 kw diode M4 J055 G7L-2A-TUB G7L-2A-P magnetron* -coaxial r9051158 T-12
ti5a

Abstract: MQ 6 SENSOR pin diagram details LZ23H3 906H LZ23H3V1 NHII
Text: transistor drain OS Output signals 0RS Reset transistor clock H1A, 0V1B, 0V2, 0V3A, 0V3B, Vertical shift , connection ABSOLUTE MAXIMUM RATINGS (Ta = +25 C) PARAMETER SYMBOL RATING UNIT NOTE Output transistor drain , Topr 25.0 °C Output transistor drain voltage Vod 14.55 15.0 15.45 V Overflow drain clock p-p , 500 11 Output transistor drain current lod 4.0 8.0 mA Line crawling LCR 3.0 % 12 NOTES : â


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PDF LZ23H3V1 LZ23H3V1 ti5a MQ 6 SENSOR pin diagram details LZ23H3 906H NHII
GT8Q102

Abstract: No abstract text available
Text: TOSHIBA GT8Q102(SM) TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE G T 8 Q 1 0 2 (S M) HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. MAXIMUM RATINGS (Ta , VOLTAGE VQE (V) w u > o < H J O > BJ Kl H H 12 10 COMMON EMITTER Tc = - 40 , 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE V(jE (V) H U > M O < H J O > BJ H H H 12 , ) w u > w o < H J O > BJ Kl H H 1000 800 600 400 200 VCE, VGE - QG / > y CE


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PDF GT8Q102 2-10S2C
2002 - Not Available

Abstract: No abstract text available
Text: 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S !Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) !External dimensions (Units : mm) 2SD2654 (1) (2) 0.2 0.5 0.5 0.3 (3) 0.8 1.6 0.15 0.2 0.55 !Absolute , Basic ordering unit (pieces) EMT3 VW BJ TL 3000 UMT3 VW BJ T106 3000 SMT3 VW BJ T146 3000


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PDF 2SD2654 2SD2351 2SD2226K 2SD2227S 50mA/5mA) 2SD2654
GT25G102

Abstract: No abstract text available
Text: TOSHIBA GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 STROBE FLASH APPLICATIONS • High Input Impedance • Low Saturation Voltage • Enhancement-Mode â , O > BJ H H H 0 4 8 12 16 20 24 GATE-EMITTER VOLTAGE VQE (V) VCE - VGE VCE - VGE 10 , VOLTAGE VQE (V) 24 H O > w o < H J O > BJ H H H 10 COMMON EMITTER Tc = 125 , / / 0 4 8 12 16 GATE-EMITTER VOLTAGE VQE (V) 20 H O > w o < H J O > BJ H H H 500 400 300


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PDF GT25G102 GT25G102
GT15Q101

Abstract: TRANSISTOR BJ 001
Text: TOSHIBA GT15Q101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15Q101 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf , VOLTAGE VQE (V) H ü > M O < H J O > BJ Kl H H 16 12 COMMON EMITTER Te = — 40 , 12 COMMON EMITTER Te = 25°C 15 IC = 30A 12 16 20 H O > M Ü < H J O > BJ Kl H H VCE - , < H J O > BJ Kl H H 800 600 400 200 VCE, VGE - QG V( :E=Oi V


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PDF GT15Q101 2-16C1C GT15Q101 TRANSISTOR BJ 001
TRANSISTOR BJ 001

Abstract: 2SD2500 2-16E3A
Text: TOSHIBA 2SD2500 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2 S D 2 5 0 0 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV High Voltage : VcBO = !500 V Low Saturation Voltage : VqE (sat) â , O > BJ H H H 0.4 0.8 1.2 1.6 2.0 2.4 BASE CURRENT IB (A) hfe - ic VCE - IB COMMON EMITTER VCE = 5V 0.01 0.03 0.1 0.3 1 3 10 30 COLLECTOR CURRENT IQ (A) H O > w o < H J O > BJ H H H 0.4 , / / / / / 0.2 0.4 0.6 0.8 1.0 1.2 BASE-EMITTER VOLTAGE VBE (V) 1.4 H O > w o < H J O > BJ H H H 0.4


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PDF 2SD2500 95MAX TRANSISTOR BJ 001 2SD2500 2-16E3A
2SD2537

Abstract: 2SD2227 T106 T100 marking bj 2SD2171S 2SD2351 2SD2227S 2SD2226K T146
Text: Transistors 2SD2537 / 2SD2171S 2SD2351 / 2SD2226K / 2SD2227S I Medium Power Transistor (25V, 1.2A) 2SD2537 / 2SD2171S •Features 1 ) High DC current gain. 2) High emitter-base voltage. (Vcbo=12V Min.) 3) Low Vce(ml). (Max, 0.3V at lc/le=500/10mA) •Packaging specifications and Fife , . (94L-1061-D212) I General Purpose Transistor (50V, 0.15A) 2SD2351 / 2SD2226K / 2SD2227S •Features 1 , 2SD2226K 2SD2227S Package UMTS SMT3 SPT tlfe VW VW W Marking BJ * BJ * — Code T106 T146 TP Basic


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PDF 2SD2537 2SD2171S 2SD2351 2SD2226K 2SD2227S 2SD2171S 500/10mA) 2SD2227 T106 T100 marking bj 2SD2227S T146
2004 - vmt3

Abstract: No abstract text available
Text: 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) zExternal , 0.3 (3) 1.25 package hFE Marking Code Basic ordering unit (pleces) VW BJ T106 3000 BJ T2L 8000 BJ TL 3000 BJ T146 3000 - TP 5000 0~0.1 0.9 2SD2707 VMT3 VW 2SD2654 EMT3


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PDF 2SD2707 2SD2654 2SD2351 2SD2226K 2SD2227S vmt3
2006 - m4 Screw Terminal pcb

Abstract: specifications of screw drivers omron G7L-2A-T J055 m4 Screw Terminal power supply for magnetron E41643 IEC417 LR35535
Text: -2A-B ­ E-bracket (with test button) SPST-NO G7L-1A-TJ G7L-1A- BJ ­ DPST-NO G7L-2A-TJ G7L-2A- BJ ­ Upper bracket SPST-NO G7L-1A-TUB G7L-1A-BUB General Purpose Relays , Yes Yes G7L-2A-TJ Yes Yes Yes G7L-1A-B DPST-NO Yes Yes No G7L-1A- BJ Yes Yes No G7L-2A-B Yes Yes No G7L-2A- BJ Yes Yes No Applicable Relay Name Model G7L-1A-T/G7L-1A-TJ/G7L-1A-B/G7L-1A- BJ G7L-2A-T/G7L-2A-TJ/G7L-2A-B/G7L-2A- BJ


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PDF UL94V-0- m4 Screw Terminal pcb specifications of screw drivers omron G7L-2A-T J055 m4 Screw Terminal power supply for magnetron E41643 IEC417 LR35535
TRANSISTOR BJ 003

Abstract: MG150J1JS50 60A4
Text: €” 0.08 0.15 /us Thermal Resistance Rth (j-c) Transistor Stage — — 0.16 °C/W Diode Stage — â , 320 < O 240 Ic - VCE 63 o > w Ü < H J O > BJ H H H W U > M O < H J O > BJ H e 160 , (V) £ < in w 55 H & 33 e H jb S w £ < BJ 0.03 400 < £ 300 200 100 10 10 1 PULSE


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PDF MG150J1JS50 150J1JS50 VCEVQE--10V TRANSISTOR BJ 003 MG150J1JS50 60A4
TOSHIBA MG300J2YS50

Abstract: L20A MG300J2YS50 TRANSISTOR BJ 040
Text: 400A/ jus — 0.08 0.15 /us Thermal Resistance Rth O'-c) Transistor Stage — — 0.096 °C/W , (V) (H U > W o < H J O > BJ H H H 640 480 320 160 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE , ) 20 (H O > M O < H J o > ai H H H W U > M O < H J O > BJ H e 16 12 vce - vge 16 , J O > BJ H H H 400 300 200 100 COMMON EMITTER RL = lfì Tc = 25°C VCE =ov


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PDF MG300J2YS50 300J2 2-109C1A TOSHIBA MG300J2YS50 L20A MG300J2YS50 TRANSISTOR BJ 040
906H

Abstract: LZ23H3V1
Text: SYMBOL OD PIN NAME Output transistor drain OS ØRS Output signals ØV1A, ØV1B, ØV2, ØV3A , transistor clock OFD Overflow drain PW GND P-well Ground NC No connection ABSOLUTE , PARAMETER Output transistor drain voltage Overflow drain voltage Reset gate clock voltage Ambient , transistor drain voltage Overflow drain clock p-p level VOD 14.55 15.0 15.45 V VØOFD , 10 AI Blooming suppression ratio Output transistor drain current MAX. 10 DSNU


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PDF LZ23H3V1 LZ23H3V1 16-pin WDIP016-N-0500C) 906H
2004 - 2SD2351

Abstract: 2SD2226K VEBO-12V 2SD2227SW T146 T106 SC-75A 2SD2707 2SD2654 2SD2227S
Text: 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S External dimensions (Unit : mm) Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ , (pleces) VMT3 EMT3 UMT3 SMT3 2.1 2SD2227S SPT VW VW VW VW VW BJ T2L BJ TL BJ T106 BJ T146 - TP 8000 3000 3000 3000 5000 0.2 2SD2654


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PDF 2SD2707 2SD2654 2SD2351 2SD2226K 2SD2227S VEBO-12V 2SD2227SW T146 T106 SC-75A 2SD2227S
SARS diode

Abstract: IR sensor using LM385
Text: ADC0833CJ, CCJ Minimum Total Ladder Resistance (Note 9) ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN Maximum Total Ladder Resistance (Note 9) ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN Minimum Common-Mode Input Range (Note 10) ADC0833BCJ /CCJ / BJ /CJ ADC0833BCN /CCN Maximum Common-Mode Input Range (Note 10) ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN DC Common-Mode Error ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN Change In Zero Error From V c c = 5V To Internal Zener Operation (Note 3) ADC0833BCJ/CCJ/ BJ /CJ ADC0833BCN/CCN 15mA Into V + VCC = N.C. V


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PDF ADC0833 ADC0833 ADC0833BCJ ADC0833BCN ADC0833BJ ADC0833CCJ ADC0833CCN ADC0833CJ SARS diode IR sensor using LM385
2004 - bUTTON PCB

Abstract: G7L-2A-TUB power supply for magnetron J055-E1-04A controlling heater with triac J055 P7LF-06 TRANSISTOR BJ 185 120LRA magnetron* -coaxial
Text: G7L-1A-TJ G7L-1A- BJ - DPST-NO G7L-2A-TJ G7L-2A- BJ - SPST-NO G7L , G7L-2A-B Yes Yes No G7L-2A- BJ SPST-NO Yes Yes G7L-1A- BJ Screw terminals , Model G7L-1A-T/G7L-1A-TJ/G7L-1A-B/G7L-1A- BJ G7L-2A-T/G7L-2A-TJ/G7L-2A-B/G7L-2A- BJ E-bracket , P7LF-06 G7L-1A-B/G7L-1A- BJ /G7L-1A-BUB/G7L-1A-BUBJ G7L-2A-B/G7L-2A- BJ /G7L-2A-BUB/G7L , for coil Four, M4 screws for contact G7L-1A- BJ with Test Button Two, M3.5 screws for coil


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PDF UL94V-0-qualifying) J055-E1-04A bUTTON PCB G7L-2A-TUB power supply for magnetron J055-E1-04A controlling heater with triac J055 P7LF-06 TRANSISTOR BJ 185 120LRA magnetron* -coaxial
2000 - AN562

Abstract: SD1565
Text: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor , discrete or distributed circuitry (microstrip). 2. PROCEDURE. First, one must select a transistor , then the Q requirement(s) must be determined. Then, the transistor 's input and output imaginary terms, if , . STMicroelectronics' SD1565 transistor has been selected for its broad bandwidth, low thermal resistance and , . Step 3. The inductance presented to the input of the transistor is resonated out by shunting with a


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PDF AN562 425MHz, 50MHz 50Ohms, AN562 SD1565
2000 - TRANSISTOR 7059

Abstract: AN562 SD1565
Text: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor , discrete or distributed circuitry (microstrip). 2. PROCEDURE. First, one must select a transistor , then the Q requirement(s) must be determined. Then, the transistor 's input and output imaginary terms, if , . STMicroelectronics' SD1565 transistor has been selected for its broad bandwidth, low thermal resistance and , . 2.3. Step 3. The inductance presented to the input of the transistor is resonated out by shunting


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PDF AN562 425MHz, 50MHz 50Ohms, TRANSISTOR 7059 AN562 SD1565
2SC3225

Abstract: No abstract text available
Text: TOSHIBA 2SC3225 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2 S C 3 2 2 5 SWITCHING APPLICTIONS SOLENOID DRIVE APPLICATIONS • High DC Current Gain : hFE = 500 (Min.) (Iq = 400 mA) • Low Saturation Voltage : V^E (sat) = v (Max.) (Ic = 300 mA) Unit in mm MAXIMUM RATINGS (Ta = 25 , (V) H O > w o < H J O > BJ H H H 1.2 1.0 0.6 0.4 0.2 COMMON EMITTER Ta = 25 , CURRENT IQ (A) H O > w o < H J O > BJ H H H 2; o H H _ < 03 wg OS < OH Eh J OO j o o 0


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PDF 2SC3225 75MAX. O-92MOD 2SC3225
Supplyframe Tracking Pixel