The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16

TRANSISTOR BC 650 c Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor bc 146

Abstract: transistor bc 570 transistor bc 630
Text: FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package , 1.6° C /mW ELECTRICAL CHARACTERISTICS AT T A =25° C ' BC 148Y BC 146R PARAMETER Collector-Base , importance. The BC 146 is complementary to PNP BC 200. ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS , Dissipation atTA<4B° C Junction Temperature Storage Temperature Range 20V 'CBO 20V ' CEO 4V


Original
PDF BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630
transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
Text: AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , characteristics (Tam b = 25 ° C ) The transistors BC 160 and BC 161 are grouped at -Iq = 100 mA and -Vce = 1V , operating points quoted below, the following values apply: Type BC 160, BC 161 hft group ~! c mA 0.1 100 , SIEMENS AKTIEN6ESELLSCHAF BC160 BC 161 BC 161 10 «1 0 0 ) nA Static characteristics {Tam b = 25 ° C , CE = 1V) - / c es BC 160 10 «1 0 0 ) 10 «1 0 0 ) -/ c es 1 0 « Ì0 0 ) (iA ~V


OCR Scan
PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
Text: 2SC » ■û23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The , 6'6-IU C E B Approx. weight 1.5 g Dimensions In mm Maximum ratings BC 160 BC 161 Collector-base , mA) 'on 'off <500 < 650 ns ns 1) The transistor is overloaded to such an extent that the DC , transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 1601


OCR Scan
PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
2004 - 3BS transistor

Abstract: No abstract text available
Text: Characteristics per Transistor Transition frequency I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance , CEB = f (VEBO) BC 856.860 EHP00376 fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EBO 10 2 , BC856T PNP Silicon AF Transistor Preliminary data For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T 3 2 1 , 2=E 2=E 3= C 3= C Package SC75 SC75 Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 65


Original
PDF BC856T VPS05996 BC856AT BC856BT 3BS transistor
2006 - wabash relay

Abstract: 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
Text: OHMS 120 TO 650 87227-6 68683-313 99ZSPA45165 51-088 TYCO ELECTRONICS AMP FCI FRAMATOME BERG , .125W TF TC=0+-100 5053HD10K00F CMF-551002FT-1 NK4H.125W1%+/100PPM1002 VISHAY BC COMPONENTS , =0+-100 5053HD5K620F CMF-555621FT-1 NK4H.125W1%+/100PPM5621 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R12 , -551001FT-1 NK4H.125W1%+/100PPM1001 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R13, 25, 26, 41, 45, 50 , =0+-100 5053HD464R0F CMF-554640FT-1 NK4H.125W1%+/100PPM464R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R16


Original
PDF E1420B E1420B E1420-68006 E1420-68006 wabash relay 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
2005 - Not Available

Abstract: No abstract text available
Text: A VCB = 30 V, IE = 0 A, TA = 150 ° C h FE 250 290 75 250 700 850 650 - 0.015 5 475 mV 300 , C ) VCE = 5V, f = 120Hz BC 856.860 EHP00387 20 dB 20 dB F 15 F 15 R S = 1 M 100 k 10 , -2 10 -1 10 0 mA 10 1 C Noise figure F = (IC ) VCE = 5V, f = 1kHz 20 dB BC 856.860 EHP00388 Noise figure F = (I C ) VCE = 5V, f = 10kHz 20 dB BC 856.860 EHP00389 F 15 R S = 1 M 10 , BC857BF.BC860BF PNP Silicon AF Transistor · For AF input stages and driver applications · High


Original
PDF BC857BF. BC860BF BC847BF, BC848BF BC849BF, BC850BF BC857BF BC858BF BC859BF
2004 - BF860

Abstract: BC847BF BC848BF BC857BF BC858BF BC859BF BC860BF
Text: = (VEB0) EHP00378 10 3 C CB0 ( C EB0 ) MHz fT 5 12 pF BC 856.860 EHP00376 , figure F = (I C ) VCE = 5V, f = 120Hz IC = 0.2mA, VCE = 5V, RS = 2 k 20 BC 856.860 EHP00386 , BC857BF.BC860BF PNP Silicon AF Transistor · For AF input stages and driver applications 2 , Pin Configuration Package BC857BF 3Fs 1=B 2=E 3= C TSFP-3 BC858BF 3Ks 1=B 2=E 3= C TSFP-3 BC859BF 4Bs 1=B 2=E 3= C TSFP-3 BC860BF 4Fs 1=B 2


Original
PDF BC857BF. BC860BF BC847BF, BC848BF BC849BF, BC850BF BC857BF BC858BF BC859BF BF860 BC847BF BC848BF BC857BF BC858BF BC859BF BC860BF
2001 - TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C , . -15 800 -300 - 650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2001 Fairchild Semiconductor Corporation Rev. A1, June


Original
PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
transistor AC 237

Abstract: silicon npn planar rf transistor sot 143 MARKING Pa TRANSISTOR bc238c sot-23 MARKING CODE GS 5 c10 g sot-23 sot-23 TRANSISTOR MARKING 76 Telefunken u 237 F-05 BFS62
Text: the taping-code to the order number. Example: aic d filEOOIb 0005153 b BC 238 C DU Order-No. of , , because box can be opened on top or bottom Example for order No.: BC 237 C DU Z Fig. 7.3 Dimensions of , Technologies BFS62 Silicon NPN Epitaxial Planar RF Transistor Applications: General up to the VHF range , . 40 25 4 25 2 200 260 175 -65.+ 175 Typ. V V V mA mA mW mW °C °C Max. 650 K/W 500 K/W , -20V Vce = 20V,r.mb-150- C Collector-base breakdown voltage / c "10(JA Collector-emitter breakdown voltage


OCR Scan
PDF DDD53m HAL66 BFS62 500WW ft-11 569-GS 000s154 if-11 transistor AC 237 silicon npn planar rf transistor sot 143 MARKING Pa TRANSISTOR bc238c sot-23 MARKING CODE GS 5 c10 g sot-23 sot-23 TRANSISTOR MARKING 76 Telefunken u 237 F-05 BFS62
2007 - bc857b infineon

Abstract: marking 3Fs
Text: EHP00386 Noise figure F = (I C ) VCE = 5V, f = 120Hz BC 856.860 EHP00387 20 dB 20 dB F 15 , BC857.BC860.B500x Noise figure F = (IC ) VCE = 5V, f = 1kHz 20 dB BC 856.860 EHP00388 Noise figure F = (I C , BC857.BC860.B500x PNP Silicon AF Transistor · For AF input stages and driver applications · , =E 2=E 3= C 3= C 3= C Package SOT23 SOT23 SOT23 * Automotive qualification ongoing Maximum Ratings , 119 ° C Junction temperature Storage temperature 1Pb-containing Symbol VCEO VCES VCBO VEBO IC ICM


Original
PDF BC857. BC860. B500x BC847, BC850 BC857B BC857C BC860C bc857b infineon marking 3Fs
Not Available

Abstract: No abstract text available
Text: /DISCRETE Product specification bC ,E ® BLU56 C H A R A C T E R IS T IC S Tj = 25 °C. SYM BOL , tM UHF power transistor bb53T31 002flfl5Q T25 N AKER H A P X P H ILIP S /IIS C R E TE , sheet Product specification status BLU56 UHF power transistor date of issue January 1991 , profile • Gold metallization ensures excellent reliability. Q U IC K R E F E R E N C E DATA R F , (MHz) V c e (V) PL (W) G p (dB) 470 M O D E O F O PERATIO N 12.5 1 > 12 Note 1


OCR Scan
PDF BLU56 bbS3T31 002AA53 MCB030 MC8027
2006 - PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Text: -272-1 PG-BGA-272-1 TE3-MUX: DS3 framer with M13 multiplexer, 0° C to 70° C , tray TE3-MUX: DS3 framer with M13 multiplexer, ­40° C to 85° C , tray PEF 3460 E V1.2-G SP000088005 PG-BGA-272-4 PEF 3452 H V1 , HDLC and PPP. Full duplex data rates on each channel up to 12.5 Mbit/s, 0° C to 85° C , tray SEROCCO-H , each channel up to 12.5 Mbit/s, ­40° C to 85° C , tape & reel SEROCCO-H: Two channel serial optimized communication controller for HDLC and PPP. Full duplex data rates on each channel up to 12.5 Mbit/s, ­40° C to


Original
PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
1999 - transistor bc556

Abstract: transistor bc 558 application transistor B 560 bc557 fairchild TRANSISTOR C 557 B transistor 557 b pnp bc559 transistor information of BC558 BC 557 PNP TRANSISTOR BC556
Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER · HIGH VOLTAGE: BC556, VCEO= -65V · LOW NOISE: BC559, BC560 · Complement to BC546 . BC 550 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C ) ° Characteristic Symbol Collector-Base Capacitance : BC556 : BC557/560 , -50 -30 V V V -65 -45 -30 -5 -100 500 150 -65 ~ 150 V V V V mA mW ° C ° C , CHARACTERISTICS (TA=25° C ) ° Characteristic Symbol Collector Cut-off Current DC Current Gain Collector


Original
PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor bc556 transistor bc 558 application transistor B 560 bc557 fairchild TRANSISTOR C 557 B transistor 557 b pnp bc559 transistor information of BC558 BC 557 PNP TRANSISTOR BC556
2005 - BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No , _Katalog_Umschl_RZ03 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o , Q67230-H1753 Q67230-H1775 - - SHDSL on-chip rate adaptive transceiver with embedded start-up, ­40° C to 85° C operating temperature, (SOCRATES), mini dry pack SHDSL on-chip rate adaptive transceiver with embedded start-up, ­40° C to 85° C operating temperature, tape & reel dry pack (SOCRATES


Original
PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
2010 - CCM PFC inductor analysis

Abstract: AN3276 STTH16BC065CT CCM PFC bc2 STTH10BC065C STTH16BC065C SLUA146 17975 STTH8BC060D TRANSISTOR T4 ST
Text: transistor turn-on by improving component performance only. Doc ID 17975 Rev 1 3/22 Existing , transistor as shown in Figure 3. Figure 3. Switch-on losses in current soft switching behavior L , global ZVT efficiency because conduction times in the transistor should increase and a dissipative , be recovered in the main boost inductor when the transistor turns on. Since the mains input voltage , the transistor turns off. The reflected voltage across NS2 is also a function of the input voltage


Original
PDF AN3276 CCM PFC inductor analysis AN3276 STTH16BC065CT CCM PFC bc2 STTH10BC065C STTH16BC065C SLUA146 17975 STTH8BC060D TRANSISTOR T4 ST
2008 - 5004L1

Abstract: No abstract text available
Text: Polarity Protection Diode = Without Transistor Driver = Without Coil Resistance (?) = 650 MOSFET Driver = , -Size Relay Series Input Voltage = 18 VDC Contact Arrangement = 2 Form C , DPDT, 2 C /O Contact Current Rating = , 3S BC 5004L1 Active Documentation & Additional Information Product Drawings: RELAY (PDF, English , Range ( C ) = -65 +125 Other: Brand = CII Contact Related Features: Mounting Options = PC Board Enclosure = Hermetically Sealed Configuration Related Features: Contact Arrangement = 2 Form C , DPDT, 2 C /O


Original
PDF 3SBC5004L1 5004L1 3000Hz 5004L1
2002 - transistor BC 458

Abstract: transistor BC 557 BC 458 transistor
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C , . -15 800 -300 - 650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2


Original
PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 transistor BC 557 BC 458 transistor
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 300 § 297 * BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO , 200-480 2 0,6 100/5 250 357 BC 238 C F 139 B 300 20 400-850 2 0,6 100/5 250 357 BC 239 B F 139 B 300 20 200-480 2 0,6 100/5 250 357 BC 239 C F 139 B 300 20 400-850 2 0,6 100/5 250 357 * BC 337 cl 16 F 1398 , 547 B TO-92 500 45 200-450 2 0,25 10/0,5 300 § 399 * BC 547 C TO-92 500 45 420-800 2 0,25 10/0,5 300


OCR Scan
PDF
2002 - of transistor bc558

Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C , . -15 800 -300 - 650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2


Original
PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 of transistor bc558 bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
BF173

Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
Text: dissipation 7.mb= 4 5 ° C Junction temperature Storage temperature range Thermal resistances Junction ambient DC characteristics ^CBO ^CEO ^EBO ^ c 40 25 4 25 2 200 175 -6 5 .+ 1 7 5 Min. Typ. Max. 650 V V V mA mA mW ° C ° C P.o. ri thJA K/W Colleotor-basebreakdown voltage / C , bottom Example for order No.: BC 237 C DU Z DU 06 'Z 7.1.2 Quantity of devices 1000 devices per reel 2000 , fiRSDGTb OOGSlbM 0 IAL6G BF173 Silicon NPN Epitaxial Planar RF Transistor Applications


OCR Scan
PDF BF173 569-GS BF173 BF173 Transistor BF 145 transistor transistor bc 7-40
transistor bc 7-40

Abstract: BF 163 TRANSISTOR transistor BF 164 bc 238c transistor transistor marking ac transistor B 722 FS transistor marking
Text: transistor not necessary, because box can be opened on top or bottom Example for order No.: BC 237 C DU Z , IQ R Silicon NPN Epitaxial Planar RF Transistor Applications: General in thick and thin film , current Total power dissipation B FS 19 R CBO CEO EBO 30 V V V mA mW ° C ° C Max. 20 5 30 W 25 « C 200 150 -65.+150 Min. Typ. Junction temperature Storage temperature range , 19 R D C characteristics Min. 7 Typ. Max. r,m b« 25 ° C , unless otherwise specified Collector


OCR Scan
PDF 000S3D1 569-GS transistor bc 7-40 BF 163 TRANSISTOR transistor BF 164 bc 238c transistor transistor marking ac transistor B 722 FS transistor marking
2008 - transistor BC SERIES

Abstract: TRANSISTOR BC 650 c
Text: Without Transistor Driver = Without Coil Resistance (?) = 650 MOSFET Driver = Without Coil Power , : 3SBC 1/5-Size Relay Series Input Voltage = 18 VDC Contact Arrangement = 2 Form C , DPDT, 2 C /O Contact , Products 3S BC 2022A2 Active Documentation & Additional Information Product Drawings: None Available , Configuration Related Features: Contact Arrangement = 2 Form C , DPDT, 2 C /O Coil Magnetic System = Non Polarized , Solder Processes = Not suitable for lead free processing Conditions for Usage: Temperature Range ( C ) =


Original
PDF 3SBC2022A2 2022A2 M39016 M39016/13-077P transistor BC SERIES TRANSISTOR BC 650 c
2008 - Not Available

Abstract: No abstract text available
Text: Protection Diode = Without Transistor Driver = Without Coil Resistance (?) = 650 MOSFET Driver = Without Coil , -Size Relay Series Input Voltage = 18 VDC Contact Arrangement = 2 Form C , DPDT, 2 C /O Contact Current Rating = , 3S BC 1778A2 Active Documentation & Additional Information Product Drawings: None Available , Level Configuration Related Features: Contact Arrangement = 2 Form C , DPDT, 2 C /O Coil Magnetic , : Temperature Range ( C ) = -65 +125 Other: Brand = CII Provide Website Feedback | Contact Customer Support


Original
PDF 3SBC1778A2 1778A2 M39016 M39016/13-112L
2008 - Not Available

Abstract: No abstract text available
Text: Without Transistor Driver = Without Coil Resistance (?) = 650 MOSFET Driver = Without Coil Power , : 3SBC 1/5-Size Relay Series Input Voltage = 18 VDC Contact Arrangement = 2 Form C , DPDT, 2 C /O Contact , Products 3S BC 1551A2 Active Documentation & Additional Information Product Drawings: None Available , Configuration Related Features: Contact Arrangement = 2 Form C , DPDT, 2 C /O Coil Magnetic System = Non Polarized , Solder Processes = Not suitable for lead free processing Conditions for Usage: Temperature Range ( C ) =


Original
PDF 3SBC1551A2 1551A2 M39016 M39016/13-077M
2004 - Not Available

Abstract: No abstract text available
Text: f (VEBO) BC 856.860 EHP00376 fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EBO 10 2 6 , BC856U PNP Silicon AF Transistor Array For AF input stages and driver applications High current , , TS = 118 ° C Junction temperature Storage temperature mA mW ° C Thermal Resistance Junction - , Resistance 1 Nov-29-2001 BC856U Electrical Characteristics at TA=25° C , unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage


Original
PDF BC856U VPW09197 EHA07175
Supplyframe Tracking Pixel