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Part Manufacturer Description Datasheet Download Buy Part
LT1216CN14 Linear Technology IC QUAD OP-AMP, 650 uV OFFSET-MAX, 23 MHz BAND WIDTH, PDIP14, Operational Amplifier
LT1215CJ8 Linear Technology IC DUAL OP-AMP, 650 uV OFFSET-MAX, 23 MHz BAND WIDTH, CDIP8, Operational Amplifier
LT1216CS16 Linear Technology IC QUAD OP-AMP, 650 uV OFFSET-MAX, 23 MHz BAND WIDTH, PDSO16, Operational Amplifier
LT2179AIS#TRPBF Linear Technology IC QUAD OP-AMP, 650 uV OFFSET-MAX, 0.085 MHz BAND WIDTH, PDSO14, 0.150 INCH, PLASTIC, SO-14, Operational Amplifier
LT2179AIS#PBF Linear Technology IC QUAD OP-AMP, 650 uV OFFSET-MAX, 0.085 MHz BAND WIDTH, PDSO14, 0.150 INCH, PLASTIC, SO-14, Operational Amplifier
LT2179AIS Linear Technology IC QUAD OP-AMP, 650 uV OFFSET-MAX, 0.085 MHz BAND WIDTH, PDSO14, 0.150 INCH, PLASTIC, SO-14, Operational Amplifier

TRANSISTOR BC 650 c Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor bc 146

Abstract: transistor bc 570 transistor bc 630
Text: FAX: (973) 376-8960 BC146 MINIATURE NPN AF LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR GENERAL DESCRIPTION The BC 146 isaNPNsilicon planar epitaxial transistor in miniature plastic package , 1.6° C /mW ELECTRICAL CHARACTERISTICS AT T A =25° C ' BC 148Y BC 146R PARAMETER Collector-Base , importance. The BC 146 is complementary to PNP BC 200. ALL DIMENSIONS IN mm ABSOLUTE MAXIMUM RATINGS , Dissipation atTA<4B° C Junction Temperature Storage Temperature Range 20V 'CBO 20V ' CEO 4V


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PDF BC146 BC146G transistor bc 146 transistor bc 570 transistor bc 630
transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
Text: AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , characteristics (Tam b = 25 ° C ) The transistors BC 160 and BC 161 are grouped at -Iq = 100 mA and -Vce = 1V , operating points quoted below, the following values apply: Type BC 160, BC 161 hft group ~! c mA 0.1 100 , SIEMENS AKTIEN6ESELLSCHAF BC160 BC 161 BC 161 10 «1 0 0 ) nA Static characteristics {Tam b = 25 ° C , CE = 1V) - / c es BC 160 10 «1 0 0 ) 10 «1 0 0 ) -/ c es 1 0 « Ì0 0 ) (iA ~V


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PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
TRANSISTOR BC 157

Abstract: BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
Text: 2SC » ■û23SbOS ooomoa tjusieô^ . PNP Silicon Transistors SIEMENS AKTIEN6ESELLSCHAF Bc 160 BC 161 BC160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN 41873). The , 6'6-IU C E B Approx. weight 1.5 g Dimensions In mm Maximum ratings BC 160 BC 161 Collector-base , mA) 'on 'off <500 < 650 ns ns 1) The transistor is overloaded to such an extent that the DC , transistors to BC 140 and BC 141 and are available upon request as matched pairs. Type Ordering code BC 1601


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PDF 23SbOS BC160 Q62702-C228 Q62702-C228-V6 Q62702-C228-V10 Q62702-C228-V16 Q62702-C228-P 160/BC140 Q62702-C228-S2 BC1611> TRANSISTOR BC 157 BC181 transistor bc160 TRANSISTOR "BC 157" transistor 2sc 1586 transistor BC 55 transistor BC SERIES transistor bc 102 BC161 transistor f15n
2004 - 3BS transistor

Abstract: No abstract text available
Text: Characteristics per Transistor Transition frequency I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance , CEB = f (VEBO) BC 856.860 EHP00376 fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EBO 10 2 , BC856T PNP Silicon AF Transistor Preliminary data For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T 3 2 1 , 2=E 2=E 3= C 3= C Package SC75 SC75 Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 65


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PDF BC856T VPS05996 BC856AT BC856BT 3BS transistor
2006 - wabash relay

Abstract: 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
Text: OHMS 120 TO 650 87227-6 68683-313 99ZSPA45165 51-088 TYCO ELECTRONICS AMP FCI FRAMATOME BERG , .125W TF TC=0+-100 5053HD10K00F CMF-551002FT-1 NK4H.125W1%+/100PPM1002 VISHAY BC COMPONENTS , =0+-100 5053HD5K620F CMF-555621FT-1 NK4H.125W1%+/100PPM5621 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R12 , -551001FT-1 NK4H.125W1%+/100PPM1001 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R13, 25, 26, 41, 45, 50 , =0+-100 5053HD464R0F CMF-554640FT-1 NK4H.125W1%+/100PPM464R0 VISHAY BC COMPONENTS VISHAY E-SIL COMPONENTS R16


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PDF E1420B E1420B E1420-68006 E1420-68006 wabash relay 1820-3145 1826-0346 RK73H2BT1621F GRM3195C1H102JD01D 5053HD619K0F e1420 Caddell-Burns Manufacturing 1826-0180 tkf 28
2005 - Not Available

Abstract: No abstract text available
Text: A VCB = 30 V, IE = 0 A, TA = 150 ° C h FE 250 290 75 250 700 850 650 - 0.015 5 475 mV 300 , C ) VCE = 5V, f = 120Hz BC 856.860 EHP00387 20 dB 20 dB F 15 F 15 R S = 1 M 100 k 10 , -2 10 -1 10 0 mA 10 1 C Noise figure F = (IC ) VCE = 5V, f = 1kHz 20 dB BC 856.860 EHP00388 Noise figure F = (I C ) VCE = 5V, f = 10kHz 20 dB BC 856.860 EHP00389 F 15 R S = 1 M 10 , BC857BF.BC860BF PNP Silicon AF Transistor · For AF input stages and driver applications · High


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PDF BC857BF. BC860BF BC847BF, BC848BF BC849BF, BC850BF BC857BF BC858BF BC859BF
2004 - BF860

Abstract: BC847BF BC848BF BC857BF BC858BF BC859BF BC860BF
Text: = (VEB0) EHP00378 10 3 C CB0 ( C EB0 ) MHz fT 5 12 pF BC 856.860 EHP00376 , figure F = (I C ) VCE = 5V, f = 120Hz IC = 0.2mA, VCE = 5V, RS = 2 k 20 BC 856.860 EHP00386 , BC857BF.BC860BF PNP Silicon AF Transistor · For AF input stages and driver applications 2 , Pin Configuration Package BC857BF 3Fs 1=B 2=E 3= C TSFP-3 BC858BF 3Ks 1=B 2=E 3= C TSFP-3 BC859BF 4Bs 1=B 2=E 3= C TSFP-3 BC860BF 4Fs 1=B 2


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PDF BC857BF. BC860BF BC847BF, BC848BF BC849BF, BC850BF BC857BF BC858BF BC859BF BF860 BC847BF BC848BF BC857BF BC858BF BC859BF BC860BF
2001 - TRANSISTOR BC 560c

Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C , . -15 800 -300 - 650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2001 Fairchild Semiconductor Corporation Rev. A1, June


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
transistor AC 237

Abstract: silicon npn planar rf transistor sot 143 MARKING Pa TRANSISTOR bc238c sot-23 MARKING CODE GS 5 c10 g sot-23 sot-23 TRANSISTOR MARKING 76 Telefunken u 237 F-05 BFS62
Text: the taping-code to the order number. Example: aic d filEOOIb 0005153 b BC 238 C DU Order-No. of , , because box can be opened on top or bottom Example for order No.: BC 237 C DU Z Fig. 7.3 Dimensions of , Technologies BFS62 Silicon NPN Epitaxial Planar RF Transistor Applications: General up to the VHF range , . 40 25 4 25 2 200 260 175 -65.+ 175 Typ. V V V mA mA mW mW °C °C Max. 650 K/W 500 K/W , -20V Vce = 20V,r.mb-150- C Collector-base breakdown voltage / c "10(JA Collector-emitter breakdown voltage


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PDF DDD53m HAL66 BFS62 500WW ft-11 569-GS 000s154 if-11 transistor AC 237 silicon npn planar rf transistor sot 143 MARKING Pa TRANSISTOR bc238c sot-23 MARKING CODE GS 5 c10 g sot-23 sot-23 TRANSISTOR MARKING 76 Telefunken u 237 F-05 BFS62
2007 - bc857b infineon

Abstract: marking 3Fs
Text: EHP00386 Noise figure F = (I C ) VCE = 5V, f = 120Hz BC 856.860 EHP00387 20 dB 20 dB F 15 , BC857.BC860.B500x Noise figure F = (IC ) VCE = 5V, f = 1kHz 20 dB BC 856.860 EHP00388 Noise figure F = (I C , BC857.BC860.B500x PNP Silicon AF Transistor · For AF input stages and driver applications · , =E 2=E 3= C 3= C 3= C Package SOT23 SOT23 SOT23 * Automotive qualification ongoing Maximum Ratings , 119 ° C Junction temperature Storage temperature 1Pb-containing Symbol VCEO VCES VCBO VEBO IC ICM


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PDF BC857. BC860. B500x BC847, BC850 BC857B BC857C BC860C bc857b infineon marking 3Fs
Not Available

Abstract: No abstract text available
Text: /DISCRETE Product specification bC ,E ® BLU56 C H A R A C T E R IS T IC S Tj = 25 °C. SYM BOL , tM UHF power transistor bb53T31 002flfl5Q T25 N AKER H A P X P H ILIP S /IIS C R E TE , sheet Product specification status BLU56 UHF power transistor date of issue January 1991 , profile • Gold metallization ensures excellent reliability. Q U IC K R E F E R E N C E DATA R F , (MHz) V c e (V) PL (W) G p (dB) 470 M O D E O F O PERATIO N 12.5 1 > 12 Note 1


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PDF BLU56 bbS3T31 002AA53 MCB030 MC8027
2006 - PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Text: -272-1 PG-BGA-272-1 TE3-MUX: DS3 framer with M13 multiplexer, 0° C to 70° C , tray TE3-MUX: DS3 framer with M13 multiplexer, ­40° C to 85° C , tray PEF 3460 E V1.2-G SP000088005 PG-BGA-272-4 PEF 3452 H V1 , HDLC and PPP. Full duplex data rates on each channel up to 12.5 Mbit/s, 0° C to 85° C , tray SEROCCO-H , each channel up to 12.5 Mbit/s, ­40° C to 85° C , tape & reel SEROCCO-H: Two channel serial optimized communication controller for HDLC and PPP. Full duplex data rates on each channel up to 12.5 Mbit/s, ­40° C to


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PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
1999 - transistor bc556

Abstract: transistor bc 558 application transistor B 560 bc557 fairchild TRANSISTOR C 557 B transistor 557 b pnp bc559 transistor information of BC558 BC 557 PNP TRANSISTOR BC556
Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER · HIGH VOLTAGE: BC556, VCEO= -65V · LOW NOISE: BC559, BC560 · Complement to BC546 . BC 550 TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25° C ) ° Characteristic Symbol Collector-Base Capacitance : BC556 : BC557/560 , -50 -30 V V V -65 -45 -30 -5 -100 500 150 -65 ~ 150 V V V V mA mW ° C ° C , CHARACTERISTICS (TA=25° C ) ° Characteristic Symbol Collector Cut-off Current DC Current Gain Collector


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor bc556 transistor bc 558 application transistor B 560 bc557 fairchild TRANSISTOR C 557 B transistor 557 b pnp bc559 transistor information of BC558 BC 557 PNP TRANSISTOR BC556
2005 - BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No , _Katalog_Umschl_RZ03 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o , Q67230-H1753 Q67230-H1775 - - SHDSL on-chip rate adaptive transceiver with embedded start-up, ­40° C to 85° C operating temperature, (SOCRATES), mini dry pack SHDSL on-chip rate adaptive transceiver with embedded start-up, ­40° C to 85° C operating temperature, tape & reel dry pack (SOCRATES


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PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
2010 - CCM PFC inductor analysis

Abstract: AN3276 STTH16BC065CT CCM PFC bc2 STTH10BC065C STTH16BC065C SLUA146 17975 STTH8BC060D TRANSISTOR T4 ST
Text: transistor turn-on by improving component performance only. Doc ID 17975 Rev 1 3/22 Existing , transistor as shown in Figure 3. Figure 3. Switch-on losses in current soft switching behavior L , global ZVT efficiency because conduction times in the transistor should increase and a dissipative , be recovered in the main boost inductor when the transistor turns on. Since the mains input voltage , the transistor turns off. The reflected voltage across NS2 is also a function of the input voltage


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PDF AN3276 CCM PFC inductor analysis AN3276 STTH16BC065CT CCM PFC bc2 STTH10BC065C STTH16BC065C SLUA146 17975 STTH8BC060D TRANSISTOR T4 ST
2008 - 5004L1

Abstract: No abstract text available
Text: Polarity Protection Diode = Without Transistor Driver = Without Coil Resistance (?) = 650 MOSFET Driver = , -Size Relay Series Input Voltage = 18 VDC Contact Arrangement = 2 Form C , DPDT, 2 C /O Contact Current Rating = , 3S BC 5004L1 Active Documentation & Additional Information Product Drawings: RELAY (PDF, English , Range ( C ) = -65 +125 Other: Brand = CII Contact Related Features: Mounting Options = PC Board Enclosure = Hermetically Sealed Configuration Related Features: Contact Arrangement = 2 Form C , DPDT, 2 C /O


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PDF 3SBC5004L1 5004L1 3000Hz 5004L1
2002 - transistor BC 458

Abstract: transistor BC 557 BC 458 transistor
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C , . -15 800 -300 - 650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 transistor BC 557 BC 458 transistor
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 300 § 297 * BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO , 200-480 2 0,6 100/5 250 357 BC 238 C F 139 B 300 20 400-850 2 0,6 100/5 250 357 BC 239 B F 139 B 300 20 200-480 2 0,6 100/5 250 357 BC 239 C F 139 B 300 20 400-850 2 0,6 100/5 250 357 * BC 337 cl 16 F 1398 , 547 B TO-92 500 45 200-450 2 0,25 10/0,5 300 § 399 * BC 547 C TO-92 500 45 420-800 2 0,25 10/0,5 300


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PDF
2002 - of transistor bc558

Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
Text: , VCEO= -65V · Low Noise: BC559, BC560 · Complement to BC546 . BC 550 1 TO-92 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25° C unless otherwise , Units V V V V V V V mA mW ° C ° C VCEO VEBO IC PC TJ TSTG Electrical Characteristics Ta=25° C , . -15 800 -300 - 650 mV mV mV mV mV mV MHz pF dB dB dB dB Units nA hFE Classification Classification hFE A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 ©2002 Fairchild Semiconductor Corporation Rev. A2


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PDF BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 of transistor bc558 bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
BF173

Abstract: BF173 Transistor BF 145 transistor 569-GS transistor bc 7-40
Text: dissipation 7.mb= 4 5 ° C Junction temperature Storage temperature range Thermal resistances Junction ambient DC characteristics ^CBO ^CEO ^EBO ^ c 40 25 4 25 2 200 175 -6 5 .+ 1 7 5 Min. Typ. Max. 650 V V V mA mA mW ° C ° C P.o. ri thJA K/W Colleotor-basebreakdown voltage / C , bottom Example for order No.: BC 237 C DU Z DU 06 'Z 7.1.2 Quantity of devices 1000 devices per reel 2000 , fiRSDGTb OOGSlbM 0 IAL6G BF173 Silicon NPN Epitaxial Planar RF Transistor Applications


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PDF BF173 569-GS BF173 BF173 Transistor BF 145 transistor transistor bc 7-40
transistor bc 7-40

Abstract: BF 163 TRANSISTOR transistor BF 164 bc 238c transistor transistor marking ac transistor B 722 FS transistor marking
Text: transistor not necessary, because box can be opened on top or bottom Example for order No.: BC 237 C DU Z , IQ R Silicon NPN Epitaxial Planar RF Transistor Applications: General in thick and thin film , current Total power dissipation B FS 19 R CBO CEO EBO 30 V V V mA mW ° C ° C Max. 20 5 30 W 25 « C 200 150 -65.+150 Min. Typ. Junction temperature Storage temperature range , 19 R D C characteristics Min. 7 Typ. Max. r,m b« 25 ° C , unless otherwise specified Collector


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PDF 000S3D1 569-GS transistor bc 7-40 BF 163 TRANSISTOR transistor BF 164 bc 238c transistor transistor marking ac transistor B 722 FS transistor marking
2008 - transistor BC SERIES

Abstract: TRANSISTOR BC 650 c
Text: Without Transistor Driver = Without Coil Resistance (?) = 650 MOSFET Driver = Without Coil Power , : 3SBC 1/5-Size Relay Series Input Voltage = 18 VDC Contact Arrangement = 2 Form C , DPDT, 2 C /O Contact , Products 3S BC 2022A2 Active Documentation & Additional Information Product Drawings: None Available , Configuration Related Features: Contact Arrangement = 2 Form C , DPDT, 2 C /O Coil Magnetic System = Non Polarized , Solder Processes = Not suitable for lead free processing Conditions for Usage: Temperature Range ( C ) =


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PDF 3SBC2022A2 2022A2 M39016 M39016/13-077P transistor BC SERIES TRANSISTOR BC 650 c
2008 - Not Available

Abstract: No abstract text available
Text: Protection Diode = Without Transistor Driver = Without Coil Resistance (?) = 650 MOSFET Driver = Without Coil , -Size Relay Series Input Voltage = 18 VDC Contact Arrangement = 2 Form C , DPDT, 2 C /O Contact Current Rating = , 3S BC 1778A2 Active Documentation & Additional Information Product Drawings: None Available , Level Configuration Related Features: Contact Arrangement = 2 Form C , DPDT, 2 C /O Coil Magnetic , : Temperature Range ( C ) = -65 +125 Other: Brand = CII Provide Website Feedback | Contact Customer Support


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PDF 3SBC1778A2 1778A2 M39016 M39016/13-112L
2008 - Not Available

Abstract: No abstract text available
Text: Without Transistor Driver = Without Coil Resistance (?) = 650 MOSFET Driver = Without Coil Power , : 3SBC 1/5-Size Relay Series Input Voltage = 18 VDC Contact Arrangement = 2 Form C , DPDT, 2 C /O Contact , Products 3S BC 1551A2 Active Documentation & Additional Information Product Drawings: None Available , Configuration Related Features: Contact Arrangement = 2 Form C , DPDT, 2 C /O Coil Magnetic System = Non Polarized , Solder Processes = Not suitable for lead free processing Conditions for Usage: Temperature Range ( C ) =


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PDF 3SBC1551A2 1551A2 M39016 M39016/13-077M
2004 - Not Available

Abstract: No abstract text available
Text: f (VEBO) BC 856.860 EHP00376 fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EBO 10 2 6 , BC856U PNP Silicon AF Transistor Array For AF input stages and driver applications High current , , TS = 118 ° C Junction temperature Storage temperature mA mW ° C Thermal Resistance Junction - , Resistance 1 Nov-29-2001 BC856U Electrical Characteristics at TA=25° C , unless otherwise specified Parameter Symbol Values min. DC Characteristics per Transistor Collector-emitter breakdown voltage


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PDF BC856U VPW09197 EHA07175
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