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Part Manufacturer Description Datasheet Download Buy Part
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16

TRANSISTOR BC 181 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
transistor BC 157

Abstract: TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
Text: Piot = f (7); i?th = parameter BC 181 -VCP'O to 8 ,5V. * ^ t o t / 'to t 10V 13V_ =c 30V , AKTIENGESELLSCHAF BC160 BC 161 BC 160 and BC 161 are epitaxial PNP silicon transistors in TO 39 case (5 C 3 DIN , complementary transistors to BC 140 and BC 1 4 1and are available upon request as matched pairs. Type BC160') BC 160-6 BC 160-10 BC 160-16 BC 160 paired BC 160/BC140 paired BC 161 BC 161-6 BC 161-10 BC 161-16 BC 161 , Dimensions In mm BC 160 40 40 5 1 0.1 175 -55 to +175 3.7 BC 161 60 60 5 1 0.1 175 -55 to +175 3.7 V V


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PDF BC160 BC160' 160/BC140 BC161/BC141 8C161 transistor BC 157 TRANSISTOR BC 181 BC181 transistor 2sc 1586 transistor BC SERIES TRANSISTOR "BC 157" TRANSISTOR BC 650 c BC161-10 BC transistor series TRANSISTOR
transistor eft 323

Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 TRANSISTOR BC 187 bauelemente DDR OA1180
Text: ZF-Spule L5/6 M-ZF-Spule L9 FH-ZF-Spule L8 FU-ZF-Spule L12 FH-ZF-Spule L13 3573-092-1 Transistor BC 528 Or. II Transistor AC 180 K Transistorpaar AC 180 K/ 181 K Blko 4700 uF, 25 V Ferritkern UKW ROÍ a 4x0 , Transistor BC 108 C entspricht 100 kOhm 2-1-25H1-665 TGL wird vom Zentrallager Erfurt 9100 der Typ BC 149 C , V geändert in 323 u BC 108 A geändert in TBC 108 A BC 108 C geändert in TBC 108 C Äquivalente , spricht TNM 100 Das Importlager in Potsdam liefert statt des Transistors T 413 C den Typ BC 109 C oder BC


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Transistor SJ 2517

Abstract: transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 SJ 2517 top marking b3a buv70
Text: . Example: Order-No. of Type BC 238 C DU Code for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51 •I 06 «■View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on gummed tape S) Additional marking "0": Taping , transistor not necessary, because box can be opened on top or botton. Example for order No.: BC 237 C DU Z , 3 6 6 V V A A A A A T1.2/1447.0888 E 2702 0-09 181 TELEFUNKEN ELECTRONIC 17E D â


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PDF BUV70 T-33-13 T0126 15A3DIN Transistor SJ 2517 transistor SJ 2518 marking code SJ transistors sj 2518 sj 2517 transistor BF 184 NPN transistor TRANSISTORS CASE X01 SJ 2517 top marking b3a buv70
TRANSISTOR BC 256

Abstract: TRANSISTOR BC 181
Text: ,00 LO,394] 3,50 [0.138], g f r ),26 [0,010] - 1,20 [0,047] (2 RLS,) 4,60 [0, 181 ] n 0,40 [0,016] 0,50 , PHOTOOOUPUER, TRANSISTOR OUTPUT WITHOUT EXTERNAL BASE CONNECTION. confidential information the information , ROAD PALATINE, ILLINOIS 60067 PHONE: 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED , , TRANSISTOR OUTPUT WITHOUT EXTERNAL BASE CONNECTION. confidential information the information contained in , , ILLINOIS 60067 PHONE: 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED BY: APPROVED BY


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bcw 95 transistor

Abstract: transistor NPN 3474 transistor bc 209 npn bc 301 transistor
Text: and am plification. 3 DESCRIPTION NPN transistor in a S O T23 plastic package. PNP com plem ents: BCW61 series. MARKING TYPE NUMBER BC W 60B B C W 60C BC W 60D MARKING CODE«1) AB* AC* AD , DC cu rre n t gain BCW 60B BC W 60C BCW 60D DC cu rre n t gain BCW 60B BC W 60C BCW 60D DC cu rre n t gain BCW 60B BC W 60C BCW 60D lc = 0; V eb = 4 V lc = 10 jliA; V ce = 5 V 20 40 100 lc = 2 mA; V , ., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, T e l.+44 181 730 5000, F a x .+44 181 754 8421 United States


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PDF BCW60 BCW61 SCA63 115002/00/03/pp8 bcw 95 transistor transistor NPN 3474 transistor bc 209 npn bc 301 transistor
10L0

Abstract: 2950 transistor
Text: ,00 LO,394] 3,50 [0.138], g f r ),26 [0,010] - 1,20 [0,047] (2 RLS,) 4,60 [0, 181 ] n 0,40 [0,016] 0,50 , PHOTOOOUPUER, TRANSISTOR OUTPUT WITHOUT EXTERNAL BASE CONNECTION. CONFIDENTIAL INFORMATION THE INFORMATION , ROAD PALATINE, ILLINOIS 60067 PHONE: 1-847-359-2790 WEB: HTTP://WWW.LUMEX.COM DRAWN BY: TM/ BC CHECKED


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47 microfarad 26v capacitor

Abstract: sk181 SK 3050 R
Text: this example, worst case TA-+50°C 4.) Rajc - 1, B°C /W from MSK 181 Data Sheet 5.) Rees 0.15'C/W for most , Isolated Case DESCRIPTION: The MSK 181 Is a high output current operational amplifier designed to drive , Min. M SK 181 Typ. Max. Units ; -f o ' ( 1 .1 Î V mA mA Supply Voltage Rang» ® Quiescent , obtained from the base emitter voltage drop of a bipolar transistor ; the equation only holds true for , opamps, such as the MSK 181 , to place a 30-50 microfarad nonelectrolytlc oapaoltor with a low effective


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PDF MSK-161 MSK-161B MII-H-38534 47 microfarad 26v capacitor sk181 SK 3050 R
tbc857c

Abstract: TBC857B
Text: and am plification especially in portable equipm ent. 3 DESCRIPTION PNP transistor in an S C , collector-base voltage B C 8 5 6 A T ; B C 856B T B C 8 5 7 A T ; BC 857B T; BC 857C T CONDITIONS open em , A T ; B C 856B T B C 8 5 7 A T ; BC 857B T; BC 857C T open base -6 5 -4 5 open co lle cto r - , 5BX , T e l. +4 4 181 730 5000, F a x .+ 4 4 181 754 8421 United S tates: 811 East Arques A venue, S U


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PDF BC856T; BC857T BC847T. BC856AT BC857AT MAM362 115002/00/02/pp8 tbc857c TBC857B
2006 - PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Text: No file text available


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PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
2005 - BCM 4336

Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Text: No file text available


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PDF B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
transistor BC 339

Abstract: marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
Text: DISCRETE SEMICONDUCTORS BC859; BC860 PNP general purpose transistor Product specification , PHILIPS PHILIPS Philips Semiconductors Product specification PNP general purpose transistor , ent. 3 DESCRIPTION PNP transistor in a S O T23 plastic package. NPN com plem ents: BC849 and BC850. MARKING TYPE NUMBER BC859 B0859A BC859B BC 859C MARKING CODE 4D p 4A p 4B p 4C p TYPE , specification PNP general purpose transistor LIMITING VALUES In accordance with the A bsolute M axim um


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PDF BC859; BC860 BC860 BC849 BC850. BC859 B0859A BC859B transistor BC 339 marking code 4D 301 marking code PNP transistor low noise transistor bc 234 transistor BC 536 SOT23 NPN marking 4d marking 4d npn l43 transistor
transistor ZA 22

Abstract: PNP TRANSISTOR marking pr BC 251 transistor BCV65
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BCV65 NPN/PNP general purpose transistor Product , Semiconductors Product specification NPN/PNP general purpose transistor FEATURES · Low curren t (max. 100 , BC V 65 MARKING CODE 97p LIMITING VALUES In accordance w ith the A bsolute M axim um Rating System (IEC 134). SYMBOL Per transistor VcBO VcE O PARAMETER CONDITIONS MIN. MAX , purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a BCV65 PARAMETER therm al resistance


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PDF BCV65 T143B 115002/00/03/pp8 transistor ZA 22 PNP TRANSISTOR marking pr BC 251 transistor BCV65
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 2N 3773 TPu 75 ►2N 5090 273 180 T2 TPu 75 •2N3819 767 »2N 5109 277 181 T2 TPu 75 ►2N , 333 ►BCW 29 904 BD 181 TPu 75 ►BC 211 341 ►BCW 30 904 BD 182 TPu 75 ►BC 211 A 341 , ►BF 167 481 ►BF 459 609 ►BF 173 ►BF 179 C ►BF 180 ►BF 181 ►BF 182 ►BF 183 ►BF 198 , 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 * BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page * BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 * BC 108 B TO-18 300 20 240-500 2 0,95 100/5


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Bc807SOT-23

Abstract: No abstract text available
Text: purpose transistor FEATURES · High current (max. 500 mA) · Low voltage (max. 45 V). BC807 PINNING , am plification. 3 DESCRIPTION PNP transistor in a S O T23 plastic package. NPN com plem ents: BC817. 3 MARKING 2 TYPE NUMBER B C 807 B C 80 7-16 BC 807-25 BC 807-40 MARKING CODE < 1 , specification PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. T ran sisto r m , V lE = 0; V CB = - 2 0 V; Tj = 150 °C Iebo hFE em itter cut-off current DC current gain BC 807 B C


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PDF BC807 BC817. MAM256 115002/00/03/pp8 Bc807SOT-23
2000 - transistor BC 945

Abstract: TRANSISTOR BC 413 b BC 945 transistor SGA-9289
Text: Preliminary Preliminary Product Description Stanford Microdevices' SGA-9289 is a high performance amplifier designed for operation from DC to 3500 MHz. With optimal matching at 2GHz, TOI=41.5dBm and P1dB=28.6dBm. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor , |S21|2 P 1dB OIP3 V BC EO ICES hFE Rth Device Characteristics, T = 25ºC VCE = 5V, ICQ=340mA (unless , Min. Typ. 20.6 13.1 18.1 11.0 29.1 28.6 41.3 41.5 Max. 7.5 8.5 * 100 ºC/W 180 24


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PDF SGA-9289 SGA-9289 DC-3500 EDS-101498 transistor BC 945 TRANSISTOR BC 413 b BC 945 transistor
transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
transistor bc 564

Abstract: TRANSISTOR 131-6 BJ 946 transistor Bc 949 datenblatt TRANSISTOR BC 545 transistor bc 207 npn bft99 DIODE smd marking 22-16 TRANSISTOR SMD MARKING CODE bc ru mmic SMD amplifier marking code 19s siemens datenbuch
Text: –¡ BFR 181 12 20 175 8 1.4 18 0.9 SOT-23 953 18 0.9 SOT-23 961 , -143 594 □ BFP 181 12 20 175 8 1.5 20 0.9 SOT-143 602 □ BFP 182 12 , 181 12 20 175 8.0 1.8 - BFQ 182 12 35 250 8.3 1.7 16 1.75 , 280 BFR 181 Low-noise front-end BFR 182 BFR 183 N BFP 180 BFP 280 BFP181 BFP 182 , Packages TO-72 Pager low current SMD-Cerec TO-117 100/140/200 mil BFQ 181 1c < 10 mA


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PDF B3-B3715 B3715-X-X-7600 transistor bc 564 TRANSISTOR 131-6 BJ 946 transistor Bc 949 datenblatt TRANSISTOR BC 545 transistor bc 207 npn bft99 DIODE smd marking 22-16 TRANSISTOR SMD MARKING CODE bc ru mmic SMD amplifier marking code 19s siemens datenbuch
3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK TI Small Signal FET Catalogue BC547E transistor bc 564 SESCO bcw 91 transistor SESCOSEM
Text: TPu 75 TPu 75 767 771 2N6111 71 T2 72 T2 73 T2 74 T2 108 109 180 181 182 T2 T2 T2 T2 T2 » 'D a , ) C ata lo g u e 183 T2 184T2 185T2 BC 107 ec 108 BC BC BC BC BC 109 140 141 160 161 TPu 75 TPu , 849 367 367 367 373 373 379 379 385 385 391 391 395 395 BC 546 BC 547 BC 548 BC 549 BC 550 BC 556 BC 557 BC 558 BC 559 BC 560 BC 635 BC 636 BC 637 BC 638 BC 639 BC 640 BCW 29 BCW 30 BCW 31 BCW 32 BCW , 138 142 157 158 159 165 166 167 168 169 170 181 182 183 233 234 235 236 237 238 2 4 1 ,A , B, C 242, A


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transistor bc 649

Abstract: No abstract text available
Text: and am plification. 3 DESCRIPTION PNP transistor in a S O T23 plastic package. NPN com plem ents: B C 846 and BC847. 3 MARKING TYPE NUMBER B C856 B C 856A BC 856B B C 857 MARKING CODE , nA Iebo hFE em itte r cut-off current DC cu rre n t gain BC856 BC857 BC856A; BC 857A BC856B , United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, T e l.+44 181 730 5000, F a x .+44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1


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PDF BC856; BC857 BC847. BC857B BC857C SCA63 115002/00/03/pp8 transistor bc 649
transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
1999 - bc 301 transistor

Abstract: transistor BC 209 BCW61 BCW61B BCW60 BCW61C BCW61D BP317
Text: transistor in a SOT23 plastic package. NPN complement: BCW60. handbook, halfpage 3 3 MARKING 1 MARKING CODE(1) TYPE NUMBER BCW61B BCW61C BC BCW61D 2 BB BD 1 2 Top view , temperature -65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr , resistance from junction to ambient VALUE UNIT 500 K/W note 1 Note 1. Transistor mounted , UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue


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PDF M3D088 BCW61 BCW60. BCW61B BCW61C BCW61D MAM256 SCA63 115002/00/03/pp8 bc 301 transistor transistor BC 209 BCW61B BCW60 BCW61C BCW61D BP317
transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , pairs available Dimensions in mm · Complementary to BC 635, BC 637, BC 639 tccanfng 19 O M l^eftnom , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 1.5 1 150 BC 640 80 V A A W °C «C s « ^c ^ CM ~ , P .o , - 5 5 . .+ 150 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC


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PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
1998 - 2907A PNP bipolar transistors

Abstract: BC 148 TRANSISTOR DATASHEET diode S6 78A transistors bf 517 TRANSISTOR BC 450 pnp BFG sot89 BC 327 SOT 23 BAS20 SOT23 bcp 846 DIODE TA 70/04
Text: mA Double Transistor Arrays w BC 846PN N/P 65 200 330 250 15 30 110 - 450* 2 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 RF-Dual Transistor , . . . . . . . . . . . . . 17 Double Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . , applications 0.45 3.0 1.89 27 27 MW-12 CGY 181 PA for PCN/PCS applications 1.2 , 7.00 2.25 1 5 1800 11.5 1 5 1800 SOT-343 1 BFP 181 N 12 20 175 8.00 1.8


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PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET diode S6 78A transistors bf 517 TRANSISTOR BC 450 pnp BFG sot89 BC 327 SOT 23 BAS20 SOT23 bcp 846 DIODE TA 70/04
transistor D613 equivalent

Abstract: TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567
Text: 3.9V Possibility to put an external bypass transistor for high temperature requirements Very low , o o o o o 4 programmable 16bit PWM modules for external transistor full bridge applications , relay and DC motor control EAE8E BC 8 Order Code [1] MLX81150 LLQ-xAA-000-TU MLX81150 , ), external blocking capacitors 26 39 1 RTG Ana LV Output for external bipolar transistor in , transistor in the voltage regulator path is obligatory. The extended temperature range is only allowed for a


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PDF MLX16x8 J2602, ISO/TS16949 ISO14001 MLX81150 transistor D613 equivalent TRANSISTOR D613 41e hall sensor transistor marking 9D transistor bc 567
1998 - BC 547 PIN DIAGRAM

Abstract: IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton ST952 pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557 TQFP32
Text: activates the off-hook or the CLID external transistor switch. 6 NC Ring LIM2 19 NC , Digital AIN . . . . . . . . . . . If CLID external transistor switch is enabled, a , . These signals control the off-hook and CLID external transistor switches and is sent to the internal , signal in opposite phase, this pin puts ON the hook switch external Q1/Q2 transistor stage. IDC When D5 input a 5VPP/Fmod signal, this pin puts ON the CLID external Q3/Q4 transistor stage. R2 limits


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PDF ST952 56Kbps TQFP32 ST952TQFP ST952 56Kbps ST75951 TQFP32 BC 547 PIN DIAGRAM IDG 600 TRANSISTOR C 557 B STMicroelectronics Krypton pin diagram of BC 547 "caller ID" "type 2" hybrid gyrator impedance modem transistor BC 557
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