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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR BC 109 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente equivalent of transistor bc212 bc 214 transistor A2222 SESCOSEM transistor BFw-11 terminals Brochage BCW91 equivalente transistor BC 141
Text: 300 § 297 * BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 BC 109 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 140 cl.6 TO , TPu 75 2N 3771 TPu 75 2N 5038 TPu 75 108 T2 TPu 75 2N 3772 TPu 75 2N 5039 TPu 75 109 T2 TPu 75 , 75 ►BC 109 297 ►BC 556 409 BD 138 TPu 75 ►BC 140 307 ►BC 557 409 BD 142 TPu 75 ►BC141 , 104 P TPu 75 BUX 45 TPu 75 ►ESM 269 749 BU 109 TPu 75 BUX 46 TPu 75 »ESM 282 751 BU 109 P


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transistor vergleichsliste

Abstract: Transistor Vergleichsliste DDR telefunken transistoren VALVO BSW69 vergleichsliste DDR vergleichsliste transistor BC-148 rft transistoren Transistoren DDR
Text: Eingangsstufen von NFV erstärkern sowie NF-Vor- und Treiberstufen Typ SC 112 . SC 207 BC 109 BC 149 BCY 56 BCY 57 BCW 49 B S Y 24 B SY 72 BC 107 BC 108 BC 109 BC 129 BC 130 BC 131 BC 147 BC 148 BC 149 BC 157 BC 158 , 309 BC 238 BC 239 BC 109 2 N 929 2 N 930 2 N 2483 2 N 2484 K C 509 KC 149 BC 109 2 N 929 2 N 930 BC 107 BC 108 BC 109 BC 171 BC 172 BC 173 BC 107 BC 108 BC 147 BC 148 2 SC 650 BC 157 BC 177 BC 158 BC 179 BC 107 BC 108 BC 109 SC 239 Seite 39 39 39 39 34 34 40 40 32 33 33 34 34 34 35 35/36 35 35 35


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BC 109 Transistor

Abstract: transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
Text: BC 109 20 30 5 200/800 2 5 200 300 0.02 0.25 300 2.5 4 TO-18 BC 109B 20 30 5 200/450 2 5 200 300 , -18 PNP DRIVER/PRE-AMPLIFIER TRANSISTOR - BC 177 45 50 5 75/260* 2 5 200 300 , DRIVER/PRE-AMPLIFIER TRANSISTORS BC 107 45 50 6 110/450 2 5 ' 200 300 0.02 0.25 300 2.5 TO-18 BC 107 A 45 50 6 110/220 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 107B 45 50 6 200/450 2 5 200 300 0.02 0.25 300 2.5 TO-18 BC 108 20 30 5 110/800 2 5 200 300 0.02 0.25 300


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PDF O-237 BC 109 Transistor transistor bc 107 TRANSISTOR BC 109 BC 108 BC 107 transistor CIL 108 transistor bc 325 BC 109C transistor bc 107b transistor BC 108 transistor
ICL8049

Abstract: transistor bc 103 anti-log TABLE antilog amplifier IL11 ICL8048 8048CC 8048BC bc 303 transistor D 8049 C
Text: 200 80 48 CC ( 0 C io 70 C) - - ■80 - 48 BC 1 0 C lo 0' C) 8048 CC (25 C) . 1 -j 4- -, : ; 8048 BC 125 Cl 1 1 r-t-i 1 Î ! 1 I H 10 ' 10 fi 10 5 10 ' INPUT , 70' C) 8048 BC 10 C to 70 "C) 8048 CC 125 C) 8048 BC 125 CI lOOmV î v. INPUT VOLTAGE SMALL , / / / / / !0-11 10"9 10-7 10-5 10-3 INPUT CURRENT (AMPS) SMALL SIGNAL VOLTAGE GAIN AS A FUNCTION OF INPUT VOLTAGE , and the base-emitter voltage of"a transistor : {e^T-J (1) For base-emitter voltages greater than


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PDF ICL8048, ICL8049 120dB ICL8049 transistor bc 103 anti-log TABLE antilog amplifier IL11 ICL8048 8048CC 8048BC bc 303 transistor D 8049 C
transistor eft 323

Abstract: EFT 323 transistor BC-108 6001-015 service-mitteilungen bc149 EFT323 TRANSISTOR BC 187 bauelemente DDR OA1180
Text: ZF-Spule L5/6 M-ZF-Spule L9 FH-ZF-Spule L8 FU-ZF-Spule L12 FH-ZF-Spule L13 3573-092-1 Transistor BC 528 Or. II Transistor AC 180 K Transistorpaar AC 180 K/181 K Blko 4700 uF, 25 V Ferritkern UKW ROÍ a 4x0 , Transistor BC 108 C entspricht 100 kOhm 2-1-25H1-665 TGL wird vom Zentrallager Erfurt 9100 der Typ BC 149 C , spricht TNM 100 Das Importlager in Potsdam liefert statt des Transistors T 413 C den Typ BC 109 C oder BC , Ferritstab 10x180 entspricht EFD 107 entspricht GA 100 10x180 MAN 360 2 EFD 115 entspricht 2GA 109


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APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 800 CIRCUIT diagram UPS APC rs 1000 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: PLANAR NPN BC 107 BC 108 BC 109 LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and , temperature Junction temperature BC 107 BC 108 BC 109 50 V 45 V 6V 30 V 20 V 30 V 20 V 5V 5V 100 mA 0.3 , BC 107 BC 108 BC 109 THERMAL DATA Rth ¡_case Thermal resistance junction-case max max 200 500 °C/W , 40V T am b = 150 °C for BC 108 - BC 109 VCb = 20 V VCb = 20 V T am b = 150 °C 15 nA 15 (j,A 15 nA , BC 108 for BC 109 50 30 30 V V V V(BR)CEO'Collector-em itter breakdown voltage dB = o) lc =


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PDF AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 800 CIRCUIT diagram UPS APC rs 1000 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
BC 109C transistor

Abstract: bc 106 transistor BC 107 npn transistor pin configuration TR BC 237 B transistor BC 368 transistor BC 108C transistor BC 106 CIL TRANSISTOR BC 177A bc 107b transistor
Text: -18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 BC 109 BC 109B BC 109C 300 300 J300 · PNP D R IV E R /P R E -A M P L IF IE R T R A N SIST O R BC 177 BC 177A BC 177B BC 178 BC 178A BC 178B BC 179 BC 179A BC 179B 45 45 45 25 25 25 20 20 · 20 50 50 50 30 30 30 25 25 25 5 5 5 5 5 5 5 5 5 75 , 0.050 .050 0.05 60 NPN D R IV E R /P R E -A M P L IF IE R T R A N S IS T O R S BC 107 BC 107 A BC 107B BC BC BC BC 108 108A 108B 108C 45 45 45 20 20 20 20 20 20 20 50 50 50 30 30 30 30 30 30 30 6 6 6 5


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PDF QQDDD13 lo-32 BC 109C transistor bc 106 transistor BC 107 npn transistor pin configuration TR BC 237 B transistor BC 368 transistor BC 108C transistor BC 106 CIL TRANSISTOR BC 177A bc 107b transistor
Not Available

Abstract: No abstract text available
Text: : NPN Open Collector Transistor , VOH = 40 VDC max.; 100 mA max. current. incremental - two square waves , . INDEX: NPN Open Collector Transistor , VOH = 40 VDC max.; 100 mA max. current. Once per revolution , mm) 3. RADIAL SHAFT LOAD: 80 lbs. max. Rated load of 20 to 40 lbs. for bearing life of 1.5 X 109 revolutions. 4. AXIAL SHAFT LOAD: 80 lbs. max. Rated load of 20 to 40 lbs. for bearing life of 1.5 X 109 , inches (mm) ZDH ZNH 6-32 UNC-2B 0.25 (6.35) DEEP 4X 90° ∅2.00 (50.8) B.C . â


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PDF LP0732 Ahmedabad-382480
D 8049 C

Abstract: an 8049 IC 8048 application note 8048 8049 ICL8049 pin diagram of 8048 8048 ir ic 8049 specification of transistor bc 107
Text: 200 80 48 CC ( 0 C io 70 C) - - ■80 - 48 BC 1 0 C lo 0' C) 8048 CC (25 C) . 1 -j 4- -, : ; 8048 BC 125 Cl 1 1 r-t-i 1 Î ! 1 I H 10 ' 10 fi 10 5 10 ' INPUT , 70' C) 8048 BC 10 C to 70 "C) 8048 CC 125 C) 8048 BC 125 CI lOOmV î v. INPUT VOLTAGE SMALL , / / / / / !0-11 10"9 10-7 10-5 10-3 INPUT CURRENT (AMPS) SMALL SIGNAL VOLTAGE GAIN AS A FUNCTION OF INPUT VOLTAGE , and the base-emitter voltage of"a transistor : {e^T-J (1) For base-emitter voltages greater than


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PDF ICL8048, ICL8049 120dB D 8049 C an 8049 IC 8048 application note 8048 8049 ICL8049 pin diagram of 8048 8048 ir ic 8049 specification of transistor bc 107
lm 7803

Abstract: "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
Text: transistor may operate in quasi-saturation. Due to the Kirk effect the internal b-c junction voltage is then , is shown. The model will be part of the bipolar compact transistor model Mextram 504, but also can be used separately. 1 Introduction In a bipolar transistor near the breakdown voltage avalanche currents , known that the collector current modulates the maximum electric field in the b-c depletion layer , critical electric field. We use for an NPN transistor an = 7.05 • 107 m_1 and bn = 1.23 • 108V/m and


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PDF 30GHZ, 60GHZ ED-42 ED-39 lm 7803 "BJT Transistors" TRANSISTOR as BC 158 BJT Transistors bipolar BC transistor AVALANCHE TRANSISTOR 60GHz transistor ED-36 two bjt bc 107 30GHZ
TRANSISTOR MARKING CODE R2A

Abstract: din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor transistor BU 705 ZS20 TRANSISTOR BC 5 transistor BC 238
Text: DOCHMTB b BU 705 Silicon NPN Power Transistor Applications: Horizontal deflection circuits in black and , -07 109 LI . . —— . TELEFUNKEN ELECTRONIC BU 705 17E D ■ä'iSOCHb QOOm^M 6 MkLGG T-33-13 " , the taping-code to the order number. Example: Order-No. of Type BC 238 C DU Code for TO-92 Transistors 06 ¡Z Orientation of transistor on tape11 Additional marking for specials51 •I 06 «■View on flat side of transistor , view on gummed tape 05 = View on round side of transistor , view on


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PDF DIN41 T-33-/S T0126 15A3DIN TRANSISTOR MARKING CODE R2A din 74 F5 TRANSISTOR MARKING 705 transistor 81 110 w 85 transistor BU 109 705 transistor transistor BU 705 ZS20 TRANSISTOR BC 5 transistor BC 238
2004 - 3BS transistor

Abstract: No abstract text available
Text: BC856T PNP Silicon AF Transistor Preliminary data For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T 3 2 1 , , TS = 109 °C Junction temperature Storage temperature mA mA mW °C Thermal Resistance Junction - , specified Symbol Values Parameter min. DC Characteristics per Transistor Collector-emitter breakdown voltage , Characteristics per Transistor Transition frequency I C = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance


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PDF BC856T VPS05996 BC856AT BC856BT 3BS transistor
1996 - 4148 zener diode

Abstract: 4148 zener C106L bc 107 colpitts oscillator zener T 4148 Zener Diode 4148 colpitts oscillator bc 107 transistor c-111 Siemens ofw 5B smd transistor data
Text: emitter resistors (R 104 and R 109 ) have to be changed if the front end is to work with a different , amplified RF signal is fed to the base of the mixer transistor , T 104. If no wide transmission range is , tolerances - 2% to 5% - are used for C 108, C 109 and C 111, a fixed SMD inductance might be used for L , type and a 3.3-V supply voltage, it may be necessary to increase C 108 to 6.8 pF. Eventually C 109 , oscillator is fed via C 111 to the emitter of the mixer transistor (T 104). At the collector of this


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PDF d1-A0-10X 4148 zener diode 4148 zener C106L bc 107 colpitts oscillator zener T 4148 Zener Diode 4148 colpitts oscillator bc 107 transistor c-111 Siemens ofw 5B smd transistor data
1995 - 4148 ZENER DIODE

Abstract: Zener Diode 4148 zener T 4148 C106L TRANSISTOR C-111 4148 ZENER eurosil bc 107 colpitts oscillator ZENER DIODE 47 transistor SMD 104
Text: emitter resistors (R 104 and R 109 ) have to be changed if the front end is to work with a different , amplified RF signal is fed to the base of the mixer transistor , T 104. If no wide transmission range is , tolerances - 2% to 5% - are used for C 108, C 109 and C 111, a fixed SMD inductance might be used for L , type and a 3.3-V supply voltage, it may be necessary to increase C 108 to 6.8 pF. Eventually C 109 , oscillator is fed via C 111 to the emitter of the mixer transistor (T 104). At the collector of this


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PDF d1-A0-10X 4148 ZENER DIODE Zener Diode 4148 zener T 4148 C106L TRANSISTOR C-111 4148 ZENER eurosil bc 107 colpitts oscillator ZENER DIODE 47 transistor SMD 104
1996 - bc237 smd

Abstract: microwave sensor microwave distance sensors ne 556 timer bc237 equivalent SMD microwave RADAR motion sensors microwave motion sensors motion sensor doppler motion sensor doppler effect motion DOPPLER
Text: also be supplied as SMDs. The BC 237 transistor with the base voltage divider (2 10 k) is also , frequency in Hz (9.35 109 ) The SMX-1 microwave sensor utilizes both silicon Schottky diodes and a GaAs fieldeffect transistor . These SMD components are automatically placed on an RF multilayer teflon board. This , consists of a preamplifier, Schmitt trigger, timer circuit and drive transistor . The range can be set , used to drive the post-triggered timer. An output transistor controls either a switching relay or


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3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK TI Small Signal FET Catalogue BC547E transistor bc 564 SESCO bcw 91 transistor SESCOSEM
Text: ) C ata lo g u e 183 T2 184T2 185T2 BC 107 ec 108 BC BC BC BC BC 109 140 141 160 161 TPu 75 TPu , page V o lr p tg t *B C 108 A *B C 108 B *B C 108 C BC 109 B BC 109 C TO-18 TO-18 TO-18 TO-18 TO , TPu 75 TPu 75 767 771 2N6111 71 T2 72 T2 73 T2 74 T2 108 109 180 181 182 T2 T2 T2 T2 T2 » 'D a , 849 367 367 367 373 373 379 379 385 385 391 391 395 395 BC 546 BC 547 BC 548 BC 549 BC 550 BC 556 BC 557 BC 558 BC 559 BC 560 BC 635 BC 636 BC 637 BC 638 BC 639 BC 640 BCW 29 BCW 30 BCW 31 BCW 32 BCW


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2006 - PEF 24628

Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Text: No file text available


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PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 PEF 22628 Pmb7725 PMB6610 psb 50505 PMB 6819
Not Available

Abstract: No abstract text available
Text: , there is a very short period of time when both the upper transistor and the lower transistor in a leg , 0 0 0 0 1.56 1.56 0.052 0.078 10.9 10.9 0.363 0.547 38.4 25.6 0 0 0 0 100 100 0 0 0 0 0.78 1.56 0.078 0.156 5.5 10.9 0.547 1.094 25.6 , 0.156 0.156 0.312 2.7 5.5 5.5 10.9 0.547 1.094 1.094 2.188 25.6 12.8 12.8 6.4 1 , 0.195 0.391 0.391 0.781 2.7 5.5 5.5 10.9 1.367 2.734 2.734 5.469 10.24 5.12 5.12


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PDF IXDP610 18-pin IXDP610
intel 8088 microprocessor

Abstract: intel 8051 microcontroller IXSE501 8088 microprocessor block diagrammed with direction dc motor interface with 8051 IXDP610
Text: both the upper transistor and the lower transistor in a leg could be on. If both transistors are on , 1.56 0.052 10.9 0.363 38.4 0 0 200 0 0 1.56 0.078 10.9 0.547 25.6 0 0 100 0 0 0.78 0.078 5.5 0.547 25.6 1 0 100 0 0 1.56 0.156 10.9 1.094 12.8 0 0 50 0 0 0.39 0.078 2.7 0.547 25.6 1 1 50 0 0 0.78 0.156 5.5 1.094 12.8 1 0 50 0 0 0.78 0.156 5.5 1.094 12.8 0 1 50 0 0 1.56 0.312 10.9 2.188 6.4 0 0 20 , 2.734 5.12 0 1 20 0 0 1.56 0.781 10.9 5.469 2.56 0 0 5 0 0 0.39 0.781 2.7 5.469 2.56 1 1 5 0 0 0.78


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PDF IXDP610 18-pin IXDP610 intel 8088 microprocessor intel 8051 microcontroller IXSE501 8088 microprocessor block diagrammed with direction dc motor interface with 8051
2001 - common cathode 7-segment display

Abstract: 0 to 99 led display using two 7 segment displays common cathode 7 segment display two digit decimal counter using 7-segment led introduction of bcd 7 segment three and half digit 7 SEGMENT LCD DISPLAY BP71 S03 pnp two digit anode 7-segment display 0 to 99 digit sx1 lcd
Text: the Driving Software: ­ bc ­ ab­d abcd ­ bc ­ a­cd a­cd abc­ abcd abcd abcd a 3 BP00 , 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 , common anode device must be driven by a PNP transistor whereas the segment lines are driven directly , (depending on LED panel used). The integrated NMOS transistor of the M44C510 which sinks the segment current in common anode operation has a voltage drop of 0.8 V at 20 mA. The PNP transistor of the common


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PDF M44C510 M44C510 M44C510. common cathode 7-segment display 0 to 99 led display using two 7 segment displays common cathode 7 segment display two digit decimal counter using 7-segment led introduction of bcd 7 segment three and half digit 7 SEGMENT LCD DISPLAY BP71 S03 pnp two digit anode 7-segment display 0 to 99 digit sx1 lcd
transistor BC 308

Abstract: transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
Text: MPN SILICON TRANSISTOR , EPITAXIAL PLANAR rRANSISTOR NPN SILICIUM, PLANAR EPITAXIAL * BC 307 BC , voltage Tension basa-émetteur Iq =-2 mA VCE =-5V VBE -0,55 0,62 -0,7 \ *The transistor BC 307 is grouped in two classes of OC gain VI - A La transistor BC 307 est subdivisé en deux classes de gain statique VI - A The transistor BC 308 is grouped in three classes of OC gain VI - A - B Le transistor BC 308 ast subdivisé en trois classes da gain statique V! - A - B The transistor BC 309 is grouped in


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PDF BC307 CB-76 307ast 308ast transistor BC 308 transistor sc 308 transistor BC 307 bc 106 transistor transistor 307 bc 309 b transistor transistor BC 55 transistor da 307 SC 309 transistor CB 308
transistor 1102

Abstract: inverter block diagram 1102SA 1102B ALD1102 TRANSISTOR a 1102 1102
Text: DESCRIPTION The ALD 1102 is a monolithic dual P-channel matched transistor pair intended for a broad range of , temperature coefficient. The transistor pair is matched for minimum offset voltage and differential thermal , current (Ids) temperature coefficient • Enhancement-mode (normally off) • DC current gain 109 , TEMPERATURE 0 +25 +50 +7$ +100 TEMPERATURE ( BC ) 6.6 Advanced Linear Devices


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PDF G25bQÃ 000DE13 ALD1102 /ALD1102B/ALD1102 transistor 1102 inverter block diagram 1102SA 1102B TRANSISTOR a 1102 1102
transistor BC 236

Abstract: bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
Text: 000^30^ AL GG BC 635 · BC 637 · BC 639 r - a i -33 Silicon NPN Epitaxial Planar Transistors , available Dimensions In mm · Complementary to BC 636, BC 638, BC 640 2.8 «QB i 1 IS .2 i 1 -2 &2 , 125 °C Collector-base breakdown voltage B C 635 BC 637 BC 639 T1.2/508.0888 E B C 637 60 1 1.5 1 150 5 5 .+ 150 BC 639 80 V A A ·a W °C °C 45 ^ C M P .o , T\ ^thJA 156 125 55 Min , 000^310 7 BC 635 · BC 637 · BC 639 Min. Collector-emitter breakdown voltage lc = 20 mA BC 635 BC 637 B


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PDF BC635 15A3DIN transistor BC 236 bc 106 transistor transistors marking HK transistors BC 23 transistor C 639 W bc 569 A27 637 A27 639 transistor bc 33 transistor 639
transistor BC 236

Abstract: transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
Text: IAL66 electronic BC 636 · BC 638 · BC 640 Creata« léchnofogtes Silicon PNP Epitaxial Planar , pairs available Dimensions in mm · Complementary to BC 635, BC 637, BC 639 tccanfng 19 O M l^eftnom , Collector-base breakdown voltage -/c = 1 mA BC636 BC 638 BC 640 RthJA r .g ` ^CEO B C 636 45 BC 638 60 1 1.5 1 150 BC 640 80 V A A W °C «C s « ^c ^ CM ~ , P .o , - 5 5 . .+ 150 , TELEFUNKEN E L E C T R O N IC 17E P ê'iEQ cn b o c m a 'is d IAL6G BC 636 * BC 638 · BC


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PDF IAL66 15A3DIN transistor BC 236 transistor bf 425 transistor bc 237c TRANSISTOR 636 bc638 transistor transistors BC 23 bc 640 transistor bc 238 b D-636 transistor
kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Text: BC 10 92 BC 109 B 2 BC 109 C2 N K T 10419 N K T 105182 N K T 10519 2N 9 2 9 2 2N 930-3 2N 2 4 , modern semiconductor technology. All Newmarket Transistor circuits use chip transistors, diodes , transistor packages. It also restricts design freedom to those types available in SOT-23, 'matchstick', and , used in the prototypes as over-specification increases cost. If biasing a transistor from a , 200 200 200 200 — PN 107 BC 107 45 PN 107 A BC 107 A 45 PN PN PN PN


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