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LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR AF 416 pnp Datasheets Context Search

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2013 - TRANSISTOR AF 416 pnp

Abstract:
Text: Item Transistor output units I/O mixed unit (output side) Source type ( PNP open collector) 32 , words approx. k words approx. 234 k approx. 256 k 64 k words 64 k steps 120 k 416 k approx. 128 145 k , k steps approx. 416 k words approx. 145 k steps approx. 512 k words approx. 32 k steps approx , AFP7Y64P 2013.06 32 points, Transistor output (Source) 64 points, Transistor output (Source) panasonic.net/id/pidsx/global AFP7XY64D2P 32 points, 24 V DC input 32 points, Transistor output (Source


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PDF AFP7Y32P AFP7Y64P AFP7XY64D2P LCE-FP71R5-3 TRANSISTOR AF 416 pnp
Not Available

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Text: output> NPN open-collector transistor PNP open-collector transistor • Maximum sink current: 100 mA , protection diode ZD1, ZD2: Surge absorption zener diode Tr1: NPN output transistor Tr2: PNP output , : Surge absorption zener diode Tr1: NPN output transistor Tr2: PNP output transistor – Black , Blue * 1 Non-voltage contact or PNP open-collector transistor or • External test input , Appearance 3 inch or larger semiconductor wafer Model No. M-DW1 Output NPN output / PNP output


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power transistor mrc 438

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Text: transistors for com plem entary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP , - ESC D ñ23SbQS 0Q043bfl 3 « S I E G 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase , for use in push-pull output stages, driver stages and for general AF applications. Their complementary , " Approx. weight O.S g Dimensions in mm Transistor fixing with M 3 screw Starting torque max. 0 .8 Nm , <0; V = parameter BD 434, BD436, BD438, BO 440. BO 442 416 - 1793 B -10 2SC D


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PDF 23SbQS 0Q043bfl BD434 BD440 BD442 434/BD 436/BD BD434. BD438. fl23SbO power transistor mrc 438 mrc 436 mrc 438 transistor mrc 439 mrc 442 mrc 437 transistor bd 370 siemens d213 mrc 439 transistor BD 370 b
bo434

Abstract:
Text: complementary AF stages The transistors BO 434, BD 436, BD 438, BD 440 and BD 442 are PNP silicon epibase power , - ESC D ■ÖSBSbOS 00043bfl 3 «SIEG 8236320 SIEMENS/ SPCL. SEMICONDS PNP Silicon Epibase , stages, driver stages and for general AF applications. Their complementary types are the NPN transistors , ■LSI ~IO.7sO.2- T is ¡Q totojK- Approx. weight O.S g Dimensions in mm Transistor fixing with M , IO4 io"1 10"! 10"' 10° 416 _- - 1793 B—10 2SC D ■Ô235bQ5 Q00M371 Permissible operating


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PDF 00043bfl BD434 BD440 BD442 BD441. t25mn 434/BD 436/BD 023SbOS G00437H bo434 TRANSISTOR BD 437 BD 434 b0436 DIN137 BD436 transistor BD 141 80442 Q62702-D202 transistor AF 11 BD
NKT677

Abstract:
Text: direction. 8 -1 8m V /degC AC113 GERMANIUM ALLOY TRANSISTOR p-n-p AF Amplifier or Driver Yellow , ) GERMANIUM ALLOY TRANSISTOR p-n-p Class B push-pull AF Output Yellow Sleeve Line on sleeve indicates , TRANSISTOR p-n-p AF Amplifier or Oscillator Red Sleeve Line on sleeve indicates collector lead Charac , AC 154 5-97 m m 0 -235irv max GERMANIUM ALLOY TRANSISTOR p-n-p Class B push-pull AF , ALLOY TRANSISTOR p-n-p AF Amplifier or Driver Pink Sleeve Line on sleeve indicates collector lead


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PDF AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 1/equivalent transistor ac127 OC171 equivalent AD149 ORP12 ac128 NKT275 sft353 GEX34
8ch pnp DARLINGTON TRANSISTOR ARRAY

Abstract:
Text: Transistor Array 657 TD62M3600F 3-ch Low-Saturation PNP Transistor Array 607 TD62M8604AF 8-ch Low-Saturation PNP Transistor Array 659 TD62M3601F 3-ch Low-Saturation PNP Transistor Array 610 , Driver 495 TD62M4600F 4-ch Low-Saturation PNP Transistor Array 635 TD62S353AFM* Low-Input-Active Darlington Source-Current Driver 499 TD62M4601F 4-ch Low-Saturation PNP Transistor , -ch Low-Saturation PNP Transistor Array 651 ULQ2003AP/AFW* 7-ch Darlington Driver 135 TD62M8601F 8


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PDF TD62S× TD62M× TD62C× TB62/TD/ULN/ULQ D62598AP TD62601P TD62602P TD62603P TD62604P TD62703P 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp DARLINGTON TRANSISTOR ARRAY ULN* PNP transistor array PNP DARLINGTON SINK DRIVER pnp darlington array m54586p pnp darlington array ULN uln2803 to drive 7 segment display ULS2003H nec pa2003c
sop18 footprint

Abstract:
Text: , SOP8, SIP8 Page BA10324A/ AF /AFV BA10358/F/N Ground sensing Ground sensing Phase compen sation , BU2302/F BU2305/F Supply voltage (V) 4-16 4-16 4-16 4-16 1. 8 - 6 1. 8- 6 Set pin: Reset when LOW, timer , . Transistor array Part no. Max Output output current voltage (mA) (V) 24 11 27 6 BA13002F BA12001 BA12002 , register 410 416 423 429 435 441 445 450 Low power DIP14, consumption SOP14 High input impedance High , . Built-in output current control and HSIP-B12 thermal overload circuit. Low saturation PNP output 516


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PDF DIP14, SSOP-B14 BA10324A/AF BA10358/F/N BA14741/ltage sop18 footprint ba3930 DIP18 3-channel switching regulator ba9221 BP5020 DC-DC CONVERTER DIP16 DIODE FS 607 SOP8 PNP Transistor Package
Not Available

Abstract:
Text: transistor TH-12CS NPN open-collector transistor TH-12CPS PNP open-collector transistor 40  , sink current) 1 0.4 V or less (at 16 mA sink current) PNP open-collector transistor • Maximum , output PNP output FA COMPONENTS Long sensing range ENERGY CONSUMPTION VISUALIZATION , °C +185 °F or more, under ambient temperature of +25 °C +77 °F (Note 2) Ambient temperature Visible targeting 0 to +50 °C +32 to +122 °F (No dew condensation), Storage: –10 to +60 °C +14 to


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PDF TH-12CPS TH-12CPS)
2011 - 0118 transistor

Abstract:
Text: GX-F6AI 24.5 0.965 Normally closed PNP open-collector transistor Normally open GX-H6AI-P , SIMPLE WIRE-SAVING UNITS PNP open-collector transistor WIRE-SAVING SYSTEMS Normally open , 0.315 Output operation GX-F/H PNP open-collector transistor GXL Normally open GL , GX-FL15BI-P GX-HL15A-P Normally closed PNP open-collector transistor Normally open GX-HL15AI-P , Standard sensing object PARTICULAR USE SENSORS 15 mA or less NPN open-collector transistor PNP


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PDF MS-GXL15 GX-15 MS-A15F MS-A15H MS-A15H: 0118 transistor
SCR 131-6

Abstract:
Text: (10-16) (pp) V( 4-16 ) V( 4-16 ) V( 4-16 ) Synchro Separator Input Voltage Noise Separators Input Voltage Control Voltage of the Output Pulse Switching Circuit t = 7 us (thyristor) t = 14 (js + td ( transistor ) t , Current ai Pins 2 and 3 (with thyristor) Current ai Pins 2 and 3 (with transistor ) Current to Pin 4 , Voltage t = 7 ^ (thyristor) t = 14 us + td ( transistor ) t = 0 ( V 3 - 1 6 = 0) (note 2) Input Current t = 7 jis (thyristor) t = 14 us + tj ( transistor ) t = 0 (V3 -1 6 = 0) Video Recorder Switch (Pin 11


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PDF TDA2593 V11-16 SCR 131-6 tda2593 tda2593 application
2009 - PEMD6

Abstract:
Text: . MAX. UNIT Per transistor ; for the PNP transistor with negative polarity VCBO collector-base , K/W SOT666 625 K/W SOT363 416 K/W SOT666 416 K/W Per transistor Rth , PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ; for the PNP transistor with , DISCRETE SEMICONDUCTORS DATA SHEET PEMD6; PUMD6 NPN/ PNP resistor-equipped transistors; R1 , Semiconductors Product data sheet NPN/ PNP resistor-equipped transistors; R1 = 4.7 k, R2 = open PEMD6


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PDF R75/04/pp8 PEMD6 nxp marking code SOT363 PEMB3 PEMH7 PNP TRANSISTOR SOT363 PNP TRANSISTOR SOT666 PUMB3 sot363
Not Available

Abstract:
Text: HUMAN MACHINE INTERFACES PM-F24P PNP open-collector transistor NPN open-collector transistor NPN open-collector transistor PNP open-collector transistor PM-R24-R NPN open-collector transistor NPN open-collector transistor PM-U24P PNP open-collector transistor PM-U24-R 6 , 0.472 LASER MARKERS PM-R24 10.5 0.413 PNP open-collector transistor PM-F24-R 5 mm , PM-L24-R 10.5 0.413 NPN open-collector transistor PM-L24P 10.5 0.413 PNP open-collector


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PDF PM-24 PM-K24 PM-K24-R PM-64 PM-24 PM-44/ PM-54
2009 - PNP TRANSISTOR "SOT363"

Abstract:
Text: ; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter - , MIN. TYP. MAX. UNIT Per transistor ; for the PNP transistor with negative polarity ICBO , DISCRETE SEMICONDUCTORS DATA SHEET PEMD9; PUMD9 NPN/ PNP resistor-equipped transistors; R1 , Semiconductors Product data sheet NPN/ PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k FEATURES , mA TR1 NPN - - - APPLICATIONS TR2 PNP - - - · Low current


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PDF R75/05/pp9 PNP TRANSISTOR "SOT363" PUMD9 PNP TRANSISTOR SOT666 nxp marking code SOT363
2009 - PEMB10

Abstract:
Text: CONDITIONS MIN. MAX. UNIT Per transistor ; for the PNP transistor with negative polarity VCBO , specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ; for the PNP , DISCRETE SEMICONDUCTORS DATA SHEET PEMD10; PUMD10 NPN/ PNP resistor-equipped transistors , Semiconductors Product data sheet NPN/ PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k FEATURES , current (DC) - 100 mA TR1 NPN - - - APPLICATIONS TR2 PNP - - -


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PDF PEMD10; PUMD10 R75/05/pp9 PEMB10 nxp marking code SOT363 PUMH10 PUMD10 PUMB10 PNP TRANSISTOR SOT666 PEMH10 PEMD10 PEMB1 SOT666
2004 - PEMB10

Abstract:
Text: transistor ; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter , PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ; for the PNP transistor with , DISCRETE SEMICONDUCTORS DATA SHEET PEMD10; PUMD10 NPN/ PNP resistor-equipped transistors , Philips Semiconductors Product specification NPN/ PNP resistor-equipped transistors; R1 = 2.2 k, R2 , PNP - - - · Low current peripheral driver R1 bias resistor 2.2 - k ·


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PDF PEMD10; PUMD10 SCA76 R75/05/pp9 PEMB10 PEMB1 PEMD10 PEMH10 PUMB10 PUMD10 PUMH10
2009 - PEMD6

Abstract:
Text: transistor ; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter , K/W SOT666 625 K/W SOT363 416 K/W SOT666 416 K/W Per transistor Rth , PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor ; for the PNP transistor with , DISCRETE SEMICONDUCTORS DAT PEMD6; PUMD6 NPN/ PNP resistor-equipped transistors; R1 = 4.7 , Semiconductors Product data sheet NPN/ PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PEMD6


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PDF R75/04/pp8 PEMD6 PEMB3 PEMH7 PUMB3
2004 - PEMD6

Abstract:
Text: CONDITIONS MIN. MAX. UNIT Per transistor ; for the PNP transistor with negative polarity VCBO , transistor ; for the PNP transistor with negative polarity ICBO collector-base cut-off current VCB = 50 , DISCRETE SEMICONDUCTORS DATA SHEET PEMD6; PUMD6 NPN/ PNP resistor-equipped transistors; R1 , Semiconductors Product specification NPN/ PNP resistor-equipped transistors; R1 = 4.7 k, R2 = open PEMD6; PUMD6 FEATURES DESCRIPTION · Built-in bias resistors NPN/ PNP resistor-equipped transistors


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PDF SCA76 R75/04/pp8 PEMD6 MARKING D6 SOT363 PEMB3 PEMH7 PUMB3
2003 - PEMB1

Abstract:
Text: and 2 - - - MAX. UNIT Per transistor ; for the PNP transistor with negative polarity VCBO VCEO VEBO , /W 416 416 K/W K/W 1. Transistor mounted on an FR4 printed-circuit board, single-sided , . UNIT Per transistor ; for the PNP transistor with negative polarity ICBO ICEO IEBO hFE VCEsat Vi(off , DISCRETE SEMICONDUCTORS DATA SHEET PEMD10; PUMD10 NPN/ PNP resistor-equipped transistors; R1 = , Semiconductors Product specification NPN/ PNP resistor-equipped transistors; R1 = 2.2 k, R2 = 47 k FEATURES


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PDF PEMD10; PUMD10 PEMD10 SCA75 R75/04/pp9 PEMB1 PEMB10
HA12003

Abstract:
Text: / AF /AFV BA10358/F/N BA14741/F B A4558/F/N B A728/F/N BA15I218/F/N BA15532/F/N BA4510F B A4560/F/N , 4.5-16 4 -16 4 -16 4-16 4-16 1.8-6 1.8-6 Timing range from microseconds to hours Maximum load , possible.Differential current output. Package DIP18 DIP22/SOP22 DIP2Q/SOP22 12 I, } in um Transistor array , temperature protection circuit. HSIP-B12 Low saturation PNP output. I ·System power supply BA392X/BA393X , ·Switching regulator Part No. BA6122A/ AF BA6149LS BA6161N/F BA9700A/ AF BA9701/F BA9702FS BA9703K Supply


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PDF BA103MA/ BA10358/F/N BA14741/F A4558/F/N A728/F/N BA15I218/F/N BA15532/F/N BA4510F A4560/F/N IPI4/S0P14/SSOP-B HA12003 6x40 lcd BU45584 transistor a226 BU4558 A226 transistor 8ch pnp DARLINGTON TRANSISTOR ARRAY monostable multivibrator using cmos ba3916 diode A226
2004 - PUMD9

Abstract:
Text: transistor ; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter , MIN. TYP. MAX. UNIT Per transistor ; for the PNP transistor with negative polarity ICBO , DISCRETE SEMICONDUCTORS DATA SHEET PEMD9; PUMD9 NPN/ PNP resistor-equipped transistors; R1 , Semiconductors Product specification NPN/ PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k FEATURES , mA TR1 NPN - - - APPLICATIONS TR2 PNP - - - · Low current


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PDF SCA76 R75/05/pp9 PUMD9
2003 - PUMD9

Abstract:
Text: -65 Tamb 25 °C; note 1 note 1 notes 1 and 2 - - - MIN. MAX. UNIT Per transistor ; for the PNP , UNIT 625 625 K/W K/W 416 416 K/W K/W 1. Transistor mounted on an FR4 printed-circuit , 10 4.7 MAX. UNIT Per transistor ; for the PNP transistor with negative polarity ICBO ICEO , DISCRETE SEMICONDUCTORS DATA SHEET PEMD9; PUMD9 NPN/ PNP resistor-equipped transistors; R1 = , Semiconductors Product specification NPN/ PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k FEATURES


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PDF OT666 SCA75 R75/04/pp9 PUMD9
2003 - PEMD6

Abstract:
Text: -65 Tamb 25 °C; note 1 note 1 notes 1 and 2 - - - MAX. UNIT Per transistor ; for the PNP transistor , UNIT 625 625 K/W K/W 416 416 K/W K/W 1. Transistor mounted on an FR4 printed-circuit , - 200 - 3.3 TYP. - - - - - - 4.7 MAX. UNIT Per transistor ; for the PNP transistor with negative , DISCRETE SEMICONDUCTORS DATA SHEET PEMD6; PUMD6 NPN/ PNP resistor-equipped transistors; R1 = , Semiconductors Product specification NPN/ PNP resistor-equipped transistors; R1 = 4.7 k, R2 = open FEATURES


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PDF SCA75 R75/03/pp8 PEMD6 PEMB3 PEMH7 PUMB3
5252 0.9V 1.5V led driver

Abstract:
Text: 2SA1832FT 2SC4738F 2SA1832F 2SC4738 2SA1832 400 12 PNP SSM (SOT- 416 , SC-75) 500 12 NPN , PNP NPN PNP General-Purpose Type 50 100 SSM USM S-MINI (SOT- 416 , SC-75) (SOT-323, SC , feeding direction 0.6 0.5 0.5 (SOT- 416 ) (SC-75) 0.55 1.6 ± 0.2 0.7 ± 0.1 4 0.5 , High-speed switching 200 50 High withstand voltage capability 300 100 Strobe 10 PNP 150 Muting NPN 300 High hFE PNP 800 High withstand voltage capability NPN


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PDF BCE0030A 5252 0.9V 1.5V led driver 5252 F 0.9V 1.5V led driver 5252 F 0.9V - 1.5V led driver 5-pin sot 353 Voltage Regulators lm2804 TAH8N401K 2SK3376TT 5252 solar cell chip e 420 dual jfet 1SS408
2010 - PUMZ1

Abstract:
Text: UNISONIC TECHNOLOGIES CO., LTD PUMZ1 Preliminary NPN/ PNP SILICON TRANSISTOR NPN/ PNP GENERAL PURPOSE TRANSISTORS DESCRIPTION The UTC PUMZ1 is a NPN/ PNP transistor , specially used in , www.unisonic.com.tw 2 of 4 QW-R218-011.a PUMZ1 Preliminary NPN/ PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Per Transistor ; For The PNP Transistor With Negative , Transistor ; For The PNP Transistor With Negative Polarity VCB =30V, IE =0 Collect Cut-off Current ICBO


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PDF OT-363 100mA QW-R218-011 PUMZ1 switch transistor pnp or npn
2011 - weight sensor circuit

Abstract:
Text: SQ4-A21-P For standard liquid Type PNP open-collector transistor SQ4-A21-N NPN open-collector transistor SQ4-A22-P PNP open-collector transistor SQ4-A22-N NPN open-collector , -13 < PNP output type> PNP open-collector transistor NPN open-collector transistor â , leakage or wrong installation < PNP output type> PNP open-collector transistor NPN , mA or less PNP open-collector transistor / NPN open-collector transistor (switch method)


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