The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR 612 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
str 5707

Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN TRANSISTOR J 5804 str 6709 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Text: TO-220/TO-3P fast-recovery rectifier SFPB SMD Schottky diode FN NPN transistor SFPL SMD ultra-fast recovery rectifier FP PNP transistor SFPM SMD rectifier HVR , ­ Sanken switching power supply SSB Sanken Schottky barrier diode STA Sanken transistor array STR Sanken transistor regulator SUM Sanken switching power supply TF Thyristor, reverse , rectifier 2SA EIAJ-registered PNP transistor 2SB EIAJ-registered PNP Darlington transistor


Original
PDF MS-001, MS-010, MS-011) MS-010) MS-018) str 5707 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN TRANSISTOR J 5804 str 6709 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
2011 - Not Available

Abstract: No abstract text available
Text: 540ESD RF transistor . BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and , 460 RF transistor . BFP460 board This board shows BFR 360L3 in different ISM-band applications , TSFP package. Please specify the applications and the transistor in your order. BFR360L3 board BFR380F board BFR360F board BFR340F board RF transistor BFR 460L3 BFR 460L3 Evalboard RF transistor BFP 460 BFP 460 Evalboard RF transistor BFR 300 Family BFR 360L3 Evalboard RF


Original
PDF 540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3
TORX1950

Abstract: TOTX1952 todx2950 TOTX1950 TORX195 tcm9200md TORX1951 TCD2565BFG TCD2916BFG TCD2712DG
Text: 130 630 644 Transparent 50 4760 15000 605 612 Transparent 50 4760 10000 605 612 Transparent 50 2720 7500 605 612 Transparent 50 1530 5000 605 612 Transparent 50 1530 4500 605 612 Transparent 50 1530 3500 605 612 Orange transparent 50 850 2300 605 612 Transparent 50 850 2100 605 612 Orange transparent 50 850 2000 605 612 Transparent 50 476


Original
PDF 2010/9SCE0004K TLRMHGH48T TLRMHGH48M TORX1950 TOTX1952 todx2950 TOTX1950 TORX195 tcm9200md TORX1951 TCD2565BFG TCD2916BFG TCD2712DG
BSH204

Abstract: No abstract text available
Text: Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor , mode MOS transistor in a SOT23 SMD package. CAUTION The device is supplied in an antistatic package , Semiconductors Objective specification P-channel enhancement mode MOS transistor , enhancement mode . .~ o + - * MOS transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified. . , = -0.4 A; Rgen = 6 £i V GS = 0 to -6 V; V DD = -6 V; Id = - 0.4 A; Rgen = 612 V GS = 0 to -6 V; V


OCR Scan
PDF BSH204 BSH204
1996 - transistor on 4409

Abstract: transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA 2SC5180
Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD , Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor , including static electricity. Document No. P12104EJ2V0DS00 (2nd edition , 0.602 0.575 ­21.2 ­26.2 ­32.8 ­39.3 ­44.5 ­49.2 ­54.7 ­58.2 ­ 61.2 VCE = 1 V, IC = 3 mA , 0.071 0.090 0.109 0.125 0.143 0.150 0.157 0.167 54.8 56.3 56.8 61.7 61.4 61.2 62.1 60.3


Original
PDF 2SC5180 2SC5180 transistor on 4409 transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA
NEC IC D 553 C

Abstract: ic 723 cn NEC JAPAN 3504 transistor on 4409
Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD , T, T sig 1. 2. 3 4. Collector Emitter Base Emitter Caution; This transistor uses figh-frequency technology. Be careful not to allow excessive current to tow through the transistor , including , ANG -21.2 -26.2 -32.8 -39.3 -44.5 -49.2 - 54.7 -58.2 - 61.2 Ic = 3 mA, Z o = 50 Cl S11 MAG , 0.143 0.150 0.157 0.167 S12 ANG 54.8 56.3 56.8 61.7 61.4 61.2 62.1 60.3 57.2 MAG 0.603 0.516 0.449 0.431


OCR Scan
PDF 2SC5180 2SC5180-- 2SC5180-T2 NEC IC D 553 C ic 723 cn NEC JAPAN 3504 transistor on 4409
1997 - lm 9805

Abstract: smd transistor marking DK smd transistor marking B3 transistor SMD DK Transistor lm 358 transistor smd marking dk BST120 BP317 SMD Transistor 6f mumbai
Text: transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BST120 QUICK REFERENCE DATA DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended , Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BST120 , From junction to ambient (note 1) Note 1. Transistor mounted on ceramic substrate: area = 2,5 cm2 and


Original
PDF BST120 SC13b SCA54 137107/00/01/pp12 lm 9805 smd transistor marking DK smd transistor marking B3 transistor SMD DK Transistor lm 358 transistor smd marking dk BST120 BP317 SMD Transistor 6f mumbai
1999 - 301 marking code PNP transistor

Abstract: BCV65 2108 npn transistor BP317 Philips MARKING CODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV65 NPN/PNP general purpose transistor , specification NPN/PNP general purpose transistor FEATURES BCV65 PINNING · Low current (max. 100 mA , , halfpage 4 3 An NPN/PNP matched pair transistor in a SOT143B plastic package. 4 2 MARKING , (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor VCBO , 25 °C 2 Philips Semiconductors Product specification NPN/PNP general purpose transistor


Original
PDF M3D071 BCV65 OT143B MAM333 OT143B) SCA63 115002/00/03/pp8 301 marking code PNP transistor BCV65 2108 npn transistor BP317 Philips MARKING CODE
1999 - transistor npn U8

Abstract: 2108 npn transistor marking code 10 sot23 Philips MARKING CODE BCX17 BCX19 BP317
Text: transistor Product specification Supersedes data of 1997 Mar 04 1999 Apr 12 Philips Semiconductors Product specification NPN general purpose transistor BCX19 FEATURES PINNING · High current , . handbook, halfpage DESCRIPTION 3 3 NPN transistor in a SOT23 plastic package. PNP complement , 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 12 2 50 V Philips Semiconductors Product specification NPN general purpose transistor BCX19 THERMAL


Original
PDF M3D088 BCX19 BCX17. MAM255 SCA63 115002/00/03/pp8 transistor npn U8 2108 npn transistor marking code 10 sot23 Philips MARKING CODE BCX17 BCX19 BP317
1999 - Not Available

Abstract: No abstract text available
Text: transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 27 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 FEATURES PINNING · Low current (max , , halfpage 1 DESCRIPTION 2 3 1 TR1 PNP Darlington transistor in a TO-92; SOT54 plastic , +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 27 2 Philips Semiconductors Product specification PNP Darlington transistor MPSA64 THERMAL


Original
PDF M3D186 MPSA64 MPSA14. MAM253 SCA63 115002/00/04/pp8
1999 - BC368

Abstract: BC369 BC369-16 BC369-25 BP317
Text: transistor Product specification Supersedes data of 1997 Feb 28 1999 Apr 26 Philips Semiconductors Product specification PNP medium power transistor BC369 FEATURES PINNING · High current , transistor in a TO-92; SOT54 plastic package. PNP complement: BC368. 3 MAM285 Fig.1 Simplified , operating ambient temperature -65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit , transistor BC369 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal


Original
PDF M3D186 BC369 BC368. MAM285 SCA63 115002/00/03/pp8 BC368 BC369 BC369-16 BC369-25 BP317
1999 - BF483

Abstract: BF485 BF487 BF488 BP317
Text: transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 27 Philips Semiconductors Product specification PNP high-voltage transistor BF488 PINNING FEATURES · Low feedback , 1 handbook, halfpage PNP transistor in a TO-92; SOT54 plastic package. NPN complements: BF483 , ; note 1 Note 1. Transistor mounted on a printed-circuit board. 1999 Apr 27 2 Philips Semiconductors Product specification PNP high-voltage transistor BF488 THERMAL CHARACTERISTICS


Original
PDF M3D186 BF488 BF483, BF485 BF487. MAM285 SCA63 115002/00/03/pp8 BF483 BF487 BF488 BP317
1999 - transistor d 2333

Abstract: 2108 npn transistor transistor NPN 3474 ic str 6707 NPN transistor 5344 BFV420 Transistor B 886 IC str 6752 5344 TRANSISTOR 04123
Text: transistor Product specification Supersedes data of 1997 Apr 22 1999 Apr 23 Philips Semiconductors Product specification NPN high-voltage transistor BFV420 FEATURES PINNING · Low current , handbook, halfpage NPN high-voltage transistor in a TO-92; SOT54 plastic package. PNP complement , . Transistor mounted on an FR4 printed-circuit board. 1999 Apr 23 2 Philips Semiconductors Product specification NPN high-voltage transistor BFV420 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER


Original
PDF M3D186 BFV420 BFV421. MAM259 SCA63 115002/00/02/pp8 transistor d 2333 2108 npn transistor transistor NPN 3474 ic str 6707 NPN transistor 5344 BFV420 Transistor B 886 IC str 6752 5344 TRANSISTOR 04123
1997 - BF199

Abstract: BF 234 transistor BP317 data bf199 transistor NPN BF199
Text: DATA SHEET book, halfpage M3D186 BF199 NPN medium frequency transistor Product specification , Semiconductors Product specification NPN medium frequency transistor BF199 FEATURES PINNING · , handbook, halfpage NPN medium frequency transistor in a TO-92; SOT54 plastic package. 3 2 3 1 , Philips Semiconductors Product specification NPN medium frequency transistor BF199 LIMITING , °C Tamb 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL


Original
PDF M3D186 BF199 SCA55 117047/00/02/pp8 BF199 BF 234 transistor BP317 data bf199 transistor NPN BF199
1994 - UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
Text: 1N5266B 6-12 1N5339B 6-39 1N4757A 6-24 1N5267B 6-12 1N5340B 6-39 1N4758A 6-24 1N5268B 6-12 1N5341B 6-39 1N4759A 6-24 1N5269B 6-12 1N5342B 6-39 1N4760A 6-24 1N5270B 6-12 1N5343B 6-39 1N4761A 6-24 1N5271B 6-12 1N5344B 6-39 1N4762A 6-24 1N5272B 6-12 1N5345B 6-39 1N4763A 6-24 1N5273B 6-12 1N5346B 6-39 1N4764A 6-24 1N5274B 6-12 1N5347B 6-39 1N5221B 6-11 1N5275B


Original
PDF
1997 - diode SOT89 smd marking B

Abstract: b3 smd transistor D-MOS transistor p-channel BST122 transistor smd marking LN transistor SMD DK SMD TRANSISTOR MARKING BR SOT89 smd marking 13 SMD Transistor 6f smd 4814
Text: transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor BST122 QUICK REFERENCE DATA DESCRIPTION P-channel vertical D-MOS transistor in SOT89 envelope and intended , Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor , to ambient (note 1) Note 1. Transistor mounted on a ceramic substrate: area = 2,5 cm2; thickness =


Original
PDF BST122 SC13b SCA54 137107/00/01/pp12 diode SOT89 smd marking B b3 smd transistor D-MOS transistor p-channel BST122 transistor smd marking LN transistor SMD DK SMD TRANSISTOR MARKING BR SOT89 smd marking 13 SMD Transistor 6f smd 4814
1998 - AN 6752

Abstract: msc925 AN 6752 japan
Text: epilayer substrate MSC319 base emitter base collector Existing advanced bipolar transistor , process makes use of an advanced, self-aligned transistor technology that is vastly superior to existing , emitter on transition frequency. · Higher power gain The self-aligned transistor structure significantly , collector MSC317 n+ p Self-aligned double-polysilicon buried npn transistor Fig.1 In the advanced , frequency and low feedback capacitance increase the transistor 's input impedance, simplifying matching to


Original
PDF NIJ004 SCS60 AN 6752 msc925 AN 6752 japan
1997 - BFV469

Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D100 BFV469 NPN high-voltage transistor , Product specification NPN high-voltage transistor BFV469 FEATURES PINNING · High transition , emitter 2 base · Buffer transistor in monitors. DESCRIPTION handbook, halfpage 2 NPN high-voltage transistor in a TO-126; SOT32 plastic package. 3 1 1 Fig.1 2 3 Top view , Jun 20 2 Philips Semiconductors Product specification NPN high-voltage transistor


Original
PDF M3D100 BFV469 O-126; MAM254 SCA54 117047/00/01/pp8 BFV469 BP317
1999 - BFV469

Abstract: transistor NPN 3474 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D100 BFV469 NPN high-voltage transistor , specification NPN high-voltage transistor BFV469 FEATURES PINNING · High transition frequency , 2 base · Buffer transistor in monitors. DESCRIPTION handbook, halfpage 2 NPN high-voltage transistor in a TO-126; SOT32 plastic package. 3 1 1 Fig.1 2 3 Top view , temperature -65 +150 °C Tamb 25 °C; note 1 Note 1. Transistor mounted on an FR4


Original
PDF M3D100 BFV469 O-126; MAM254 SCA63 115002/00/02/pp8 BFV469 transistor NPN 3474 BP317
1999 - 2108 npn transistor

Abstract: BFS19
Text: transistor Product specification Supersedes data of 1997 Jul 02 1999 Apr 15 Philips Semiconductors Product specification NPN medium frequency transistor BFS19 FEATURES PINNING · Low current , handbook, halfpage 3 3 NPN medium frequency transistor in a SOT23 plastic package. 1 MARKING 1 , temperature -65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 15 2 Philips Semiconductors Product specification NPN medium frequency transistor


Original
PDF M3D088 BFS19 MAM255 SCA63 115002/00/03/pp8 2108 npn transistor BFS19
1997 - MAR 745 TRANSISTOR

Abstract: 2N4124 2N4126 BP317 transistor 2N4126
Text: transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors , transistor 2N4126 PINNING FEATURES · Low current (max. 200 mA) PIN · Low voltage (max. 25 V). , 3 2 PNP transistor in a TO-92; SOT54 plastic package. NPN complement: 2N4124. 3 MAM280 , transistor 2N4126 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). , temperature -65 +150 °C Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL


Original
PDF M3D186 2N4126 2N4124. MAM280 SCA53 117047/00/02/pp8 MAR 745 TRANSISTOR 2N4124 2N4126 BP317 transistor 2N4126
1997 - BC516 equivalent

Abstract: str 6707 datasheet str 6707 str 6707 datasheet bc517 StR 40000 darlington pnp DATASHEET OF IC 733 transistor BC516 PO 903
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC516 PNP Darlington transistor , Apr 16 Philips Semiconductors Product specification PNP Darlington transistor BC516 , PNP Darlington transistor in a TO-92; SOT54 plastic package. NPN complement: BC517. TR2 3 1 , Semiconductors Product specification PNP Darlington transistor BC516 LIMITING VALUES In accordance , . Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER


Original
PDF M3D186 BC516 BC517. MAM303 SCA54 117047/00/02/pp8 BC516 equivalent str 6707 datasheet str 6707 str 6707 datasheet bc517 StR 40000 darlington pnp DATASHEET OF IC 733 transistor BC516 PO 903
1999 - BP317

Abstract: MPSA44
Text: transistor Product specification Supersedes data of 1998 Nov 26 1999 Apr 27 Philips Semiconductors Product specification NPN high-voltage transistor MPSA44 FEATURES PINNING · Low current , high-voltage transistor in a TO-92; SOT54 plastic package. 1 2 3 2 3 MAM279 Fig , -65 +150 °C Tamb 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit , transistor MPSA44 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS VALUE UNIT


Original
PDF M3D186 MPSA44 MAM279 SCA63 115002/00/04/pp8 BP317 MPSA44
1999 - transistor marking 44 sot23

Abstract: 2108 npn transistor BP317 PMBTA06 PMBTA56 254-D transistor marking code SP Transistor B 886 transistor t 04 sot23
Text: transistor Product specification Supersedes data of 1998 Jul 20 1999 Apr 29 Philips Semiconductors Product specification NPN general purpose transistor PMBTA06 FEATURES PINNING · High , professional communication equipment. DESCRIPTION handbook, halfpage 3 3 NPN transistor in a SOT23 , temperature -65 +150 °C Tamb 25 °C; note 1 Note 1. Transistor mounted on an FR4 , purpose transistor PMBTA06 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS


Original
PDF M3D088 PMBTA06 PMBTA56. SCA63 115002/00/04/pp8 transistor marking 44 sot23 2108 npn transistor BP317 PMBTA06 PMBTA56 254-D transistor marking code SP Transistor B 886 transistor t 04 sot23
1999 - BC368

Abstract: BC369 BP317
Text: transistor Product specification Supersedes data of 1997 Feb 28 1999 Apr 26 Philips Semiconductors Product specification NPN medium power transistor BC368 FEATURES PINNING · High current (1 , output stages. 1 handbook, halfpage DESCRIPTION 2 2 3 1 NPN medium power transistor in , Tamb 25 °C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 26 2 Philips Semiconductors Product specification NPN medium power transistor BC368 THERMAL


Original
PDF M3D186 BC368 BC369. MAM259 SCA63 115002/00/03/pp8 BC368 BC369 BP317
Supplyframe Tracking Pixel