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Part Manufacturer Description Datasheet Download Buy Part
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ISW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C

TRANSISTOR 6019 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1995 - TTL 7400 national semiconductor

Abstract: TRANSISTOR 6019 CV2f AN-77 MM74C20 MM74C02 MM74C00 CD4016C CD4000A C1995
Text: N-channel type CMOS the Ideal Logic Family CMOS the Ideal Logic Family TL F 6019 ­ 1 FIGURE 2-1 , transistor has virtually no voltage drop across it if there is no current flowing through it and since the , C1995 National Semiconductor Corporation TL F 6019 RRD-B30M105 Printed in U S A If we try to , or N-channel transistor is conducting Now if we increase VCC and therefore VGS the inverter must , an MOS transistor is essentially capacitive looking like a 1012X resistor shunted by a 5 pF


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1998 - 2SC5408

Abstract: 2SC5408-T1 p1209
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) · High fT 17 GHz TYP. 2.1±0.1 · High gain C E E E B PACKING STYLE 0.15 +0.1 ­0 8-mm wide emboss taping, 6-pin (collector) feed hole direction 0 to 0.1 3 kpcs/reel 0.7 2SC5408-T1 QUANTITY , 8.988 8.510 8.017 7.572 7.203 6.876 6.569 6.225 6.019 5.728 5.541 5.326 5.112 4.951 4.761


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PDF 2SC5408 2SC5408-T1 2SC5408 2SC5408-T1 p1209
2SC5408

Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE · High fr PACKAGE DIMENSIONS (in mm) 17 GHzTYP. · High gain 2.1 ±0.1 |Szie|2 = 15.5 dB TYP. @ f = 2 GHz, V ce = 2 V, Ic = 7 mA · , 1.25+0.1 , NF = 1.1 dB, @ f = 2 GHz Vce = 2 V, Ic = 1 mA 6-pin Small Mini Mold Package 1F · jl m f CD ! , 8.017 7.572 7.203 6.876 6.569 6.225 6.019 5.728 5.541 5.326 5.112 4.951 4.761 4.602 S 21 ANG 169.5


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PDF 2SC5408 2SC5408-T1 50-pcs 2SC5408
2004 - ic 4518 applications

Abstract: 55GN01M ta 8227 CIRCUIT transistor mcp 6723 Sanyo 6324 IC 5276 8723 transistor
Text: 5Ordering number : ENN7541 55GN01M NPN Epitaxial Planar Silicon Transistor 55GN01M UHF Wide-band Low-noise Amplifier Applications Features · · Package Dimensions High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). unit : mm 2059B 0.3 0.2 0.425 [55GN01M] 0.15 3 0.425 2.1 1.250 0 to 0.1 1 2 0.65 0.65 2.0 0.3 0.6 0.9 1 , 3.379 66.41 0.134 67.71 0.252 -51.39 1200 0.401 172.13 2.862 60.19


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PDF ENN7541 55GN01M S21e2 2059B 55GN01M] ic 4518 applications 55GN01M ta 8227 CIRCUIT transistor mcp 6723 Sanyo 6324 IC 5276 8723 transistor
2008 - IC 7485

Abstract: IC 4511 55GN01S ENN7687 of IC 4511 IC 8898 transistor 7929
Text: 55GN01S Ordering number : ENN7687 NPN Epitaxial Planar Silicon Transistor 55GN01S UHF Wide-band Low-noise Amplifier Applications Features · · · High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Symbol Conditions , 53.63 0.312 - 60.19 800 0.522 -165.18 4.152 79.02 0.099 57.04 0.294


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PDF 55GN01S ENN7687 S21e2 IC 7485 IC 4511 55GN01S ENN7687 of IC 4511 IC 8898 transistor 7929
Not Available

Abstract: No abstract text available
Text: Ordering number : ENA1114A 55GN01MA RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single MCP Features · · http://onsemi.com High cut-off frequency : fT=5.5GHz typ High gain : S21e2=10dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage , 60.19 54.45 48.82 43.51 38.32 33.45 29.00 24.92 21.39 18.07 S12 0.026 0.037 0.060 0.084 0.109 0.134


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PDF ENA1114A 55GN01MA S21e2 250mm2 A1114-8/8
2N8491

Abstract: 2N648B 2N6491 equivalent TA8327 equivalent 2n6488 tektronix 454 TA8328 2n8491t 2N6486 equivalent 2n6490
Text: . is 5 5 5 A ' TRANSISTOR DISSIPATION: Pr At case temperatures up to 25°C 57 75 75 W At , , ANO iBj Igr AM) Iqj ARE: MEASIKEO WITH TEKTRONIX CURRENT PROBE P- 6019 ANO TYPE >34 AUPLIFIER.OR


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PDF 00174S0 ---01M7450--D 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 RCA-2N6486â 2N6491 2N8491 2N648B 2N6491 equivalent TA8327 equivalent 2n6488 tektronix 454 TA8328 2n8491t 2N6486 equivalent 2n6490
2008 - ic 4518 applications

Abstract: 55GN01M transistor 7089 TRANSISTOR 6019 ic 8705 am
Text: 5Ordering number : ENN7541 55GN01M NPN Epitaxial Planar Silicon Transistor 55GN01M UHF Wide-band Low-noise Amplifier Applications Features · · Package Dimensions High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). unit : mm 2059B 0.3 0.2 0.425 [55GN01M] 0.15 3 0.425 2.1 1.250 0 to 0.1 1 2 0.650.65 2.0 0.3 0.6 0.9 1 , 67.71 0.252 -51.39 1200 0.401 172.13 2.862 60.19 0.159 66.77 0.255


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PDF ENN7541 55GN01M S21e2 2059B 55GN01M] ic 4518 applications 55GN01M transistor 7089 TRANSISTOR 6019 ic 8705 am
2004 - ic 7485

Abstract: enn7687 4868 TRANSISTOR 6019
Text: 55GN01S Ordering number : ENN7687 NPN Epitaxial Planar Silicon Transistor 55GN01S UHF Wide-band Low-noise Amplifier Applications Features · · · High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit , 53.63 0.312 - 60.19 800 0.522 -165.18 4.152 79.02 0.099 57.04 0.294


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PDF 55GN01S ENN7687 S21e2 ic 7485 enn7687 4868 TRANSISTOR 6019
TA8724

Abstract: 2N6248 transistor 2n6246 2N6469
Text: N T . IB ` TRANSISTOR DISSIPATION: A t case temperatures , MEASURED FOR X g , AND I g g I g | ANO I e 2 ARE MEASURED WITH TEKTRONIX CURRENT PROBE P- 6019 AND TYPE 134


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PDF 2N6246, 2N6247, 2N6248, 2N6469 O-204AA 2N6246 2N6469 P-6019 TA8724 2N6248 transistor 2n6246
1997 - nec 473

Abstract: p1209 NEC 596 nec 646 nec 1299 662 nec 731
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE · High fT 17 GHz TYP. · High gain |S21e|2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA · NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA · 6-pin Small Mini Mold Package PACKAGE DIMENSIONS (in mm) 2.1±0.1 1.25±0.1 0.2 +0.1 ­0 0.15 +0.1 ­0 1.3 0.65 0.65 , 8.017 7.572 7.203 6.876 6.569 6.225 6.019 5.728 5.541 5.326 5.112 4.951 4.761 4.602 S 21 ANG 169.5 160.4


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PDF 2SC5408 2SC5408-T1 50-pcs nec 473 p1209 NEC 596 nec 646 nec 1299 662 nec 731
2008 - 55GN01MA

Abstract: ic 4518 applications 491 marking transistor SANYO DC 303 temperature control IM 314 IM 304 zo 103 ma A1114
Text: 55GN01MA Ordering number : ENA1114 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features · · High cut-off frequency : fT= 5.5GHz typ. High gain : S21e2 =10dB typ (f=1GHz). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage , 0.134 67.71 0.252 -51.39 1200 0.401 172.13 2.862 60.19 0.159 66.77


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PDF 55GN01MA ENA1114 S21e2 250mm20 A1114-6/6 55GN01MA ic 4518 applications 491 marking transistor SANYO DC 303 temperature control IM 314 IM 304 zo 103 ma A1114
1998 - IR2132 APPLICATION NOTE

Abstract: IR2130 IR2130 APPLICATION NOTE power supply IRF830 APPLICATION Mosfet driver IR2130 igbt driver ir2130 circuit AN ir2130 ir2132 datasheet irf840 mosfet ir2130 application
Text: Data Sheet No. PD- 6.019 -G IR2130/IR2132 3-PHASE BRIDGE DRIVER Features · · · · · · · · Product Summary Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V Undervoltage , Transistor Count Die Size Die Outline Thickness of Gate Oxide Connections First Layer Second , 10 Data Sheet No. PD- 6.019 -G IR2130/IR2132 IR2130/IR2132 3-PHASE BRIDGE DRIVER Graphs


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PDF 019-G IR2130/IR2132 IR2130) IR2132) IR2130/IR2132 IRF830) IRF450) IR2132 APPLICATION NOTE IR2130 IR2130 APPLICATION NOTE power supply IRF830 APPLICATION Mosfet driver IR2130 igbt driver ir2130 circuit AN ir2130 ir2132 datasheet irf840 mosfet ir2130 application
2002 - 5271 sanyo

Abstract: Ic 9148 TRANSISTOR C 5857 AN 7323 IC 2SC5647 D2502 ma 8630 marking nh
Text: Ordering number : ENN7326 2SC5647 NPN Epitaxial Planar Silicon Transistor 2SC5647 UHF to S Band Low-Noise Amplifier and OSC Applications · · · Package Dimensions Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2106A : fT=11.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). [2SC5647] 0.75 0.6 0.3 3 , 0.257 -93.26 3.758 77.71 0.138 60.19 0.519 -49.35 1800 0.227 -97.38


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PDF ENN7326 2SC5647 S21e2 2SC5647] 5271 sanyo Ic 9148 TRANSISTOR C 5857 AN 7323 IC 2SC5647 D2502 ma 8630 marking nh
Not Available

Abstract: No abstract text available
Text: 55GN01MA Ordering number : ENA1114A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01MA UHF Wide-band Low-noise Amplifier Applications Features • • High cut-off frequency : fT=5.5GHz typ High gain : ⏐S21e⏐2=10dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions , 1.574 1.472 1.387 1.321 ∠S21 123.28 104.33 89.00 80.60 73.14 66.41 60.19 54.45 48.82


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PDF 55GN01MA ENA1114A 250mm2Ã A1114-8/8
2012 - TLE 4984

Abstract: transistor mcp 6723
Text: Ordering number : ENA1114A 55GN01MA SANYO Semiconductors DATA SHEET 55GN01MA Features · · NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications High cut-off frequency : fT=5.5GHz typ High gain : S21e2=10dB typ (f=1GHz) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage , 60.19 54.45 48.82 43.51 38.32 33.45 29.00 24.92 21.39 18.07 S12 0.026 0.037 0.060 0.084 0.109 0.134


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PDF ENA1114A 55GN01MA S21e2 250mm2 023A-009 A1114-8/8 TLE 4984 transistor mcp 6723
2008 - ma 8630

Abstract: Ic 9148 2SC5647 D2502 FT115 TA-3664 2SC564
Text: Ordering number : ENN7326 2SC5647 NPN Epitaxial Planar Silicon Transistor 2SC5647 UHF to S Band Low-Noise Amplifier and OSC Applications · · · Package Dimensions Low noise : NF=2.6dB typ (f=2GHz). unit : mm High cutoff frequency : fT=9.0GHz typ (VCE=1V). 2106A : fT=11.5GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=10.5dB typ (f=2GHz). [2SC5647] 0.75 0.6 0.3 3 , 77.71 0.138 60.19 0.519 -49.35 1800 0.227 -97.38 3.421 72.32 0.152


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PDF ENN7326 2SC5647 S21e2 2SC5647] ma 8630 Ic 9148 2SC5647 D2502 FT115 TA-3664 2SC564
2008 - functions of ic 4528

Abstract: A1115 TRANSISTOR 6019 transistor 7929 55GN01SA A11156
Text: 55GN01SA Ordering number : ENA1115 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 55GN01SA UHF Wide-band Low-noise Amplifier Applications Features · · · High cutoff frequency : fT= 5.5GHz typ. High gain : S21e2=10dB typ (f=1GHz). Ultrasmall package permitting applied sets to be small and slim. Specifications Absolute Maximum Ratings at Ta , -154.82 5.405 87.15 0.081 53.63 0.312 - 60.19 800 0.522 -165.18 4.152


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PDF 55GN01SA ENA1115 S21e2 A1115-6/6 functions of ic 4528 A1115 TRANSISTOR 6019 transistor 7929 55GN01SA A11156
1997 - 2SC5408

Abstract: nec 772 2SC5408-T1
Text: . PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE , 10.151 9.573 8.988 8.510 8.017 7.572 7.203 6.876 6.569 6.225 6.019 5.728 5.541 5.326 5.112


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1997 - transistor NEC D 587

Abstract: transistor NEC D 986 marking R13 R13* MARKING TC-2365 transistor NEC D 586 P10410EJ2V0DS00 230 624 533 392 741 vtvm TC236
Text: DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS (Units: mm) FEATURES · Excellent Low NF in Low Frequency Band 2.1±0.1 · Low Voltage Use 1.25±0.1 · Low Cob : 0.9 pF TYP. V VEBO 3.0 V Collector Current IC 50 mA Total Power Dissipation PT 120 mW Junction Temperature Tj , 128.8 126.2 123.7 121.0 118.4 116.0 113.4 MAG 8.180 7.303 6.019 5.080 4.275 3.666 3.212


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PDF 2SC4885 transistor NEC D 587 transistor NEC D 986 marking R13 R13* MARKING TC-2365 transistor NEC D 586 P10410EJ2V0DS00 230 624 533 392 741 vtvm TC236
2000 - BC558 transistor

Abstract: 433.92 Antenna design PIC projects using transmitter and receiver SAW 433MHZ PCB 433 mhz RECEIVER basic fm transmitter and receiver ic 7435 antenna 433MHZ whip 433.92 transmitter, pcb layout TXM-433-RM
Text: simple circuit. This circuit works by taking advantage of the BC558 transistor 's characteristics. The transistor , as with many PNP transistors, will turn "on"when its base is more than .7V below the collector , ) and the transistor is "off" forcing the "detect" output low through the 47K resistor. When a carrier is not present, the base voltage is .8V below VCC, and the transistor will turn "on", causing the , external components may require a driving transistor .) Page 10 ACHIEVING A SUCCESSFUL RF


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PDF RXM-418/433-RM BC558 transistor 433.92 Antenna design PIC projects using transmitter and receiver SAW 433MHZ PCB 433 mhz RECEIVER basic fm transmitter and receiver ic 7435 antenna 433MHZ whip 433.92 transmitter, pcb layout TXM-433-RM
70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: SEMI-CONDUCTOR/ TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL , 2SC1815 70401815 NPN TRANSISTOR 2878 2SC2878 2SC2878 70402878 5550 2N5550 , -126 TRANSISTOR SJE-5331 SJE-360, SJE-5919 MJE-243 CASE 77 70405331 LEAD CONFIG. MAY DIFFER SJE , -5331 SEE ABOVE SJE-6018 355-1 70405331 70406018 MJE-350 SJE- 6019 MJE-340, SJE , IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-220 TRANSISTOR 2005M


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PDF 2N3391 SPS-953 MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919 2N4249 SPS-690, PN-2907A 70413080 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
1997 - NEC D 586

Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm NT 407 F power transistor transistor NEC D 986 R13* MARKING 2SC4885 NEC D 882 p TC236
Text: . DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC4885 uc t NPN SILICON EPITAXIAL TRANSISTOR 3 , 6.019 5.080 4.275 3.666 3.212 2.847 2.567 2.344 2.156 1.999 1.871 1.755 1.659 1.574 1.501


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TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 MC 151 transistor CD 1691 CB nec 2501 Le 629 tfr 586 nec 2501 LD 325 567/triac ZO 410 MF
Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS FEATURES · · · · · Excellent Low NF in Low Frequency Band Low Voltage Use Low C o b : 0.9 p F T Y P . Low Noise Voltage : 90 mV TYP. Super Mini Mold Package. EIAJ : SC-70 (Units: mm) 2.1 ± 0.1 1,25±0.1 3 25 13 3.0 50 120 125 -5 5 to +125 V V V mA mW °C °C - , 116.0 113.4 MAG 8.180 7.303 6.019 5.080 4.275 3.666 3.212 2.847 2.567 2.344 2.156 1.999 1.871 1.755


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PDF 2SC4885 SC-70 TRANSISTOR J 5804 NPN nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 MC 151 transistor CD 1691 CB nec 2501 Le 629 tfr 586 nec 2501 LD 325 567/triac ZO 410 MF
2002 - 421-5

Abstract: 1 307 329 082 217-2 2SC5436 43ga
Text: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA808TC NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES · Built-in high-gain transistor fT = 9.0 GHz TYP., S21e2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz · Built-in 2 transistors (2 × 2SC5436) · Flat-lead 6-pin thin-type ultra super minimold package BUILT-IN TRANSISTORS Q1 , 7.853 7.186 6.625 6.019 5.572 5.141 4.776 4.426 4.130 3.884 3.641 3.444 3.246 3.072 2.923


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PDF PA808TC S21e2 2SC5436) 2SC5436 PA808TC-T1 421-5 1 307 329 082 217-2 2SC5436 43ga
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