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L70MO5

Abstract:
Text: , +150 0, +150 -55. +150 0. +150 -55, +150 0.+150 SP C L TO-220 T O -220 TO -126 (1) TO-3 TO-3, TO- 22C TO -3 TO-3, TO- 22C TO -220 TO -3 TO-3, TQ-22C TO -3 TO-3. TO- 22C TO -220 TO-220 T O -3 TO-3, TO- 22C TO -3 TO-3. TO- 22C T0-220 T0-220 TO-3 TO-3. TO-22( T O -3 rO-3, TO- 22C 28a 35* 35 20 35 35 35 35 35


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PDF L2605 L70MO5 L7805 L7805C L78S05 L76S05C O-220 O-22C TQ-22C L7875 L261
AXS10DS21

Abstract:
Text: 2010 9 1. 2. 4 3. 4. () 5. RoHS AXS 1 0 10 : DS : DS TQ : TQ 22c 44c 1 :/ 2 : DS21 AXS10DS21 BOTTOM VIEW 25 300 2c 8 25 300 4c 20 300 2c DS DS22 TQ41 AXS10DS22 AXS10TQ41 10 16 TQ ) 1. 2. All Rights Reseved Copyright Panasonic Electric Works, Ltd. 2010 9 (AXS1) 1. 2A AC1,000V 1 1mA DC 500V


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PDF AXS10DS21 AXS10DS22 AXS10TQ41 HP4338B 75kgf} 19kgf} 20kgf} AXS10DS21 7621 AXS10DS DS21 TQ41 DS22 HP4338B
2SK725

Abstract:
Text: 340 TO- 22C ) 2SK1105R 800 3 80 4:00 1400 140 90 340 TO-3PF 2SK1663L.S 800 3 80 4.00 1400 140 90 340 , -3P 2SK960MR 900 3 40 5.00 1400 130 90 340 TO-220F15 2SK961 900 3 80 5.00 1400 130 90 340 TO- 22C ) FAP-I , 10 80 0.40 860 210 90 225 TO- 22C ) 2SK2051L.S 250 10 80 0.40 860 120 90 225 T-PACK L,S 2SK1019 450


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PDF 2SK905 2SK906 2SK900 T0-220 2SK947MR T0-220F15 2SK901 2SK1549R K949MR O-220F15 2SK725 K949 90-340 2SK960 2sk899 2SK903MR SK955 k902 k952
NPN Transistor isolated T0-220

Abstract:
Text: °C Operating and Storage Temperature Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c , Isolation Test Number 2 Figure 22c . Screw Mounting Position for Isolation Test Number 3 ' Measurement


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PDF BUL44/D BUL44/BUL44F T0-220 T0-220 BUL44 21A-06 O-220AB 221D-01 221D-02. BUL44F NPN Transistor isolated T0-220
marking 4FW

Abstract:
Text: INCH-POUND IQualification requirements I 38510/ 22C I have been removed.-[ ^LFEBRGAR? 1989 , . This Material Copyrighted By Its Respective Manufacturer MIL-M-38510/ 22C 1.3 Absolute maximum ratings , Its Respective Manufacturer MIL-M-38510/ 22C (Copies of the specification and standard required by , . 3 This Material Copyrighted By Its Respective Manufacturer MIL-M-38510/ 22C TABLE I. Electrical , Respective Manufacturer MIL-M-38510/ 22C TABLE I. Electrical perforwance characteristics - Continued. 1


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PDF 38510/22C MIL-M-38510/22B MIL-M-38510/22C marking 4FW smd diode marking LOB smd ic marking 1ft JL-01 smd diode marking codes 2U smd diode marking KC 54H103 smd marking LOB Z8 ITT Diode BFT smd
BUL148

Abstract:
Text: . < 30%, Test No. 2 Per Fig. 22b Tq » 25°C) Test No. 3 Per Fig. 22c VlSOL — 4500 3500 1500 V Total , heatsink with all leads shorted together. Figure 22c . Screw Mounting Position for Isolation Test Number 3


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PDF BUL146/BUL146F AN1040. BUL148 NH 20AB BUL14GF iQ30 bipolar power transistor transistor Ic3A NPN BUL146 3-336 motorola BUL44 BUL44F
JT-3500

Abstract:
Text: °C) Test No. 1 Per Fig. 22c VlSOL — 4500 3500 1500 Volts Total Device Dissipation (Tc = 25°C) Derate , 22b. Clip Mounting Position for Isolation Test Number 1 for Isolation Test Number 2 Figure 22c . Screw


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PDF MJE18008/D MJE/MJF18008 O-220 O-220 MJF18008, 221D-02 E69369 JT-3500 221A-06 221D MJE18008 MJF18008 MPF930 MTP8P10 MUR105
ATIC 164 D2 44 pin

Abstract:
Text: No file text available


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PDF XC5200 PQ100 VQ100 XC5202 XC5204 XC5206 XC5210 XC5215 TQ144 PG156 ATIC 164 D2 44 pin ATIC 164 D2 48 pin ATIC 164 D3
bdw 51 52

Abstract:
Text: POWER TRANSISTORS, Epitaxial-base for linear and switching applications (continued) TYPE POLARITY (A)oaoA (A) 033A < o an c E UJ u_ JZ d > X < u o 0 in CNJ II u 1- <§) ? □ a. PACKAGE BDW 22B* PIMP 80 80 12 15 1 4 90 TO-3 BDW 21C* NPN 100 100 12 15 1 4 90 TO-3 BDW 22C * PNP 100 100 12 15 1 4 90 TO-3 BDW 51 NPN 45 45 15 20 1 5 125 TO-3 BDW 52 PIMP 45 45 15 20 1 5 125 TO-3 BDW 51A NPN 60 60 15 20 1 5 125 TO-3 BDW 52A PNP 60 60 15 20 1 5 125 TO-3 BDW 51B NPN 80 80 15 20 1 5


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PDF BDW52C O-126 TQ-220 O-220 T0-220 bdw 51 52 5A pnp to 220 t 5877
AMP catalog 82074

Abstract:
Text: . 188A.31S 447647-6 SET, passivated M2252C/2-0I M22520/ 2-2C 4 M22520/5-01 M22520/5-35 B '42, I42A, 1426 447647-7 SST, passivated M22520/2-01 V 22520/ 2-2C 7 M22520/5-0Ã


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PDF M22520/2-01 M22520/2-20 M22520/5-01 M25520/5-11 142/V P/122520/2-01 M22520/2-70 M22520/5 AMP catalog 82074
quadrant detector

Abstract:
Text: 0.8-1.8 (mm) 10 x 10 5x5 (Mm) 5 5 (n ) - 100 ~ 100 0.6 0.6 22°C 22°C T03 T08 Device O ptions


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PDF J16PS quadrant detector detector active area size nep J16QUAD-8D6-R05M-HS
2SK2277

Abstract:
Text: O P - 3 o .45 12 13 2SK2571 TOP3E o.4 5 2SK2032 TOP-3Fo45 2SK2659 2SK2575 22C Eo i3S


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PDF 2SK2277 2SK2014 2SK2047 2SK2538 220Fz 2SK1834 220Fro 2SK1980 A2SK2128 220E-0 220E4 2SK2015 2SK2580
Not Available

Abstract:
Text: 22c 23 -3 A 13 22 □ A i 2 21 □ a h 20 □ A 10 19 □ NC 83Y L-79B 1A 60206 NEC , l + 200 mV and VqH - 200 mV w ith the !oad shown {n figure , 22c NEC JUPD434008 Figure , Timing Waveforms Address Access Cycle Chip Select Access Cycle 22c ^ a c -5 A/PD434008 , 83JH6777B NEC JHPD434008 Timing Waveforms (cont) 22c 7


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PDF JJPD434008 JUPD434008 -8842A /JPD434008 /PD434008 83JH6777B JHPD434008
221A-06

Abstract:
Text: °C) Test No. 1 Per Fig. 22c vISOL — 4500 3500 1500 Volts Total Device Dissipation (Tq = 25°C) Derate , Isolation Test Number 2 Figure 22c . Screw Mounting Position for Isolation Test Number 3 * Measurement made


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PDF MJE18006/D MJE/MJF18006 O-220 O-220 MJF18006, 221D-02 E69369 221A-06 221D 327J MJE18006 MJF18006 MPF930 MTP8P10
BDW73

Abstract:
Text: ïfiAHSYS ELECTRON ICS ^^ LIMITED BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D 80 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3 V, 3 A TO- 22C ) PACKAGE (TOP VIEW) B C C C E C o Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDW74 -45 BDW74A -60


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PDF BDW74, BDW74A, BDW74B, BDW74C, BDW74D BDW73, BDW73A, BDW73B, BDW73C BDW73D BDW73 BDW74C BDW74B BDW74A BDW74 bdw73d BDW73B BDW73A BDW74D
transistor bd650

Abstract:
Text: e TfiANSYS BD646, BD648, BD650, BD652 fUCTRONICS PNP SILICON POWER DARLINGTONS LIMITED • Designed for Complementary Use with BD645, BD647, BD649 and BD651 • 62.5 W at 25°C Case Temperature • 8 A Continuous Collector Current • Minimum hFE of 750 at 3 V, 3 A TO- 22C ) PACKAGE (TOP VIEW) B C C C E C 1 2 3 O c c c Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL


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PDF BD646, BD648, BD650, BD652 BD645, BD647, BD649 BD651 O-22C) BD646 transistor bd650 b0648 BD646 b0652 BD650 BD648 BD652 BD645 BD647
ballast electronic hps

Abstract:
Text: ) Test No. 1 Per Fig. 22c VlSOL — 4500 3500 1500 Volts Total Device Dissipation (Tc ■25 °C) Derate , shorted together MOUNTED FULLY ISOLATED PACKAGE 0.107* LEADS S/Pk*— HEATSINK I Figure 22c . Screw , Per Fig. 22b Tq - 25 °C) Test No. 1 Per Fig. 22c VlSOL — 4500 3500 1500 Volts Total Device , leads shorted together Figure 22c . Screw Mounting Position for Isolation Test Number 3 MOUNTING


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PDF MJE/MJF18006 O-220 O-220 MJF18006, ballast electronic hps TRANSISTOR TC 100 mje1800b hps electronic ballast AMD 754 740 data sheat AN1040 jf18008 MJE18006 MJF18006
CQ220I-8B

Abstract:
Text: mounted in a TO- 22C ) case with an isolated mounting tab. MAXIMUM RATINGS (Tc = 25°C unless otherwise


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PDF CQ220I-8B CQ220I-8D CQ220I-8M CQ220I-8N O-22QAB CQ220I-8B O-22C) CQ220I CQ220I CQ220I-8N
toroid FT10

Abstract:
Text: °C) Test No. 3 Per Fig. 22c VlSOL — 4500 3500 1500 Volts Total Device Dissipation (Tq - 25°C) Derate , heatsink with all leads shorted together. Figure 22c . Screw Mounting Position for Isolation Test Number 3


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PDF BUL45F, E69369 BUL45 BUL45F toroid FT10 1000 watt hf transistor 12 volt 150 watt hf transistor 12 volt 221A-06 221D MJE18006 MJF18006
L146 IC

Abstract:
Text: Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (Tc - 25"C) Symbol v CEO VCES Ve b O ic , Figure 22c . Screw Mounting Position for Isolation Test Number 3 · Measurement made between leads and


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PDF BUL146/BUL146F L146 IC L146F L146B
221A-06

Abstract:
Text: °C) Test No. 3 Per Fig. 22c VlSOL 4500 3500 1500 Volts Total Device Dissipation (Tc - 25'C) Derate above , Position Figure 22b. Clip Mounting Position Figure 22c . Screw Mounting Position for Isolation Test Number 1


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PDF BUL147/BUL147F T0-220 T0-220 BUL147F AN1040, 221A-06 221D BUL147 BUL44 BUL44F npn transistor w20
312oc

Abstract:
Text: . Test No. 2 Per Fig. 22b <30%,Ta»25°C) Test No. 3 Per Fig. 22c V|SOL — 4500 3500 1500 Volts Total , shorted together heatsink | Figure 22c . Screw Mounting Position for Isolation Test Number 3 MOUNTING


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PDF MJE/MJF18004 O-220 AN1040. 312oc mjf*8004 MJF18004 transistor mjf18004 221A-06 221D 2C230 MJE18004
MB81C71

Abstract:
Text: etal Seal) Dual In-Line Package (Case No.: DIP- 22C -A02) 22-Lead P lastic Dual In-Line Package (Case , ) Leadless Chip C arrier (Case No.: LCC- 22C -A01 ) PIN NQ 1 INDEX j .195(4.95)TYR . .045(1.14) 150(3J1)TYR


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PDF 536-Bit MB81C71 00Q3Eb7 MB81C71-45 MB81C71-S5 22-Pad LCC-22C-A01 MB81C71-55 374T7L
F18002

Abstract:
Text: 22c . Screw Mounting Position for Isolation Test Number 3 MOUNTING INFORMATION* Figure 23a


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PDF MJE/MJF18002 O-220 O-220 MJF18002, 15to20 AN1040. F18002 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 L 3705 MJE18002 221D 221A-06 MJF18002
2009 - SCR 30A 400V

Abstract:
Text: , Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.2°C /W Note 1


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PDF NTE5424 NTE5424 25kHz. Repeti50 300mA, 00V/s, -10A/s, 100mA SCR 30A 400V SCR 30A 100V
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