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TPT5609 datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
TPT5609 TPT5609 ECAD Model Others TRANSISTOR (NPN) Original PDF

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TPT5609

Abstract: TPT560
Text: TPT5609 TPT5609 TO-92L TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25) 3. BASE Collector current ICM: 1 A Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=10µA, IE=0 25 V


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PDF TPT5609 O-92L 500mA 800mA, TPT5609 TPT560
TO-92L

Abstract: TPT5609 TPT5610 TO 92L NPN Transistor
Text: TPT5609 TO-92L Transistor (NPN) 1. EMITTER TO-92L 4.700 5.100 2. COLLECTOR 3. BASE 7.800 8.200 0.600 0.800 Features 1 2 3 Excellent linearity of Current Gain Low saturation voltage Complementary to TPT5610 Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage , 60-120 B 85-170 C 120-240 TPT5609 TO-92L Transistor (NPN) Typical Characteristics -


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PDF TPT5609 O-92L O-92L TPT5610 500mA 800mA, TO-92L TPT5609 TPT5610 TO 92L NPN Transistor
2006 - TPT5609

Abstract: TPT5610 TO-92L
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5609 TO-92L TRANSISTOR (NPN) 1. EMITTER FEATURES Excellent linearity of Current Gain Low saturation voltage Complementary to TPT5610 2. COLLECTOR 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 25 VCEO , hFE A B C 60-120 85-170 120-240 Typical Characteristics TPT5609 Jiangsu


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PDF O-92L TPT5609 O-92L TPT5610 500mA 800mA, TPT5609 TPT5610 TO-92L
2006 - TPT5609

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# TPT5609 Features x x Excellent linearity of Current Gain Low saturation voltage NPN Epitaxial Silicon Transistor Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current , .104 NOTE www.mccsemi.com Revision: 1 1 of 3 2007/12/14 MCC TPT5609 TM Micro


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PDF TPT5609 O-92L TPT5609
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5609 TRANSISTOR (NPN) TO-92L FEATURES Excellent Linearity of Current Gain Low saturation voltage Complementary to TPT5610 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC


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PDF O-92L TPT5609 O-92L TPT5610 500mA 800mA,
2006 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5610 TO-92L TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent linearity of Current Gain Low saturation voltage Complementary to TPT5609 MAXIMUM RATINGS 2. COLLECTOR 3. BASE (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -25 VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current


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PDF O-92L TPT5610 O-92L TPT5609 -500mA -800mA, -80mA
TPT5610

Abstract: 85170 TPT5609 3700 transistor TO-92L IC 7800
Text: TPT5610 TO-92L Transistor (PNP) TO-92L 1. EMITTER 4.700 5.100 2. COLLECTOR 3. BASE 7.800 8.200 0.600 0.800 Features 1 2 3 Excellent linearity of Current Gain Low saturation voltage Complementary to TPT5609 (TA=25 unless otherwise noted) Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -25 -20 -5 -1 0.75 150 -55-150 Units V V V A W 3.700 4.100 0.350


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PDF TPT5610 O-92L O-92L TPT5609 -500mA -800mA, -80mA TPT5610 85170 TPT5609 3700 transistor TO-92L IC 7800
2004 - Not Available

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5609 TO-92L TRANSISTOR (NPN) 1. EMITTER FEATURES Power dissipation PCM: 2. COLLECTOR 1 W (Tamb=25℃) 3. BASE Collector current 1 A ICM: Collector-base voltage 25 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN TYP


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PDF O-92L TPT5609 O-92L 500mA 800mA,
2006 - TPT5609

Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# TPT5609 Features x x · Excellent linearity of Current Gain Low saturation voltage Halogen free available upon request by adding suffix "-HF" NPN Epitaxial Silicon Transistor Unit V V V A W O C O C Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating Collector-Emitter Voltage , 1 of 3 2013/01/01 TPT5609 MCC TM Micro Commercial Components www.mccsemi.com


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PDF TPT5609 10Adc, TPT5609
2006 - TPT5610

Abstract: TPT5609
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5610 TO-92L TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent linearity of Current Gain Low saturation voltage Complementary to TPT5609 MAXIMUM RATINGS 2. COLLECTOR 3. BASE (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -25 VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current


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PDF O-92L TPT5610 O-92L TPT5609 -500mA -800mA, -80mA TPT5610 TPT5609
2006 - TPT5610

Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TPT5610 TO-92L TRANSISTOR (PNP) 1. EMITTER FEATURES Excellent Linearity of Current Gain Low saturation voltage Complementary to TPT5609 MAXIMUM RATINGS 2. COLLECTOR 3. BASE (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector- Base Voltage -25 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC


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PDF O-92L TPT5610 O-92L TPT5609 -500mA -800mA, -80mA TPT5610
TPT5609

Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Text: S8050 S8550 S9012 S9013 S9014 S9015 S9018 SS8050 SS8550 ZTX450 TPT5609 2SA1585S 2SA933AS 2SC1740S


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PDF 2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
2014 - MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Text: No file text available


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PDF MJD31C MJD32C MJD42C MMJD2955 MMJD3055 MMS8050-L 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
2014 - diac kr 206

Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Text: No file text available


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PDF element14 diac kr 206 BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
2008 - Green

Abstract: SMBJ11CA BAS70WT S1B40 UF5406T MTZJ10A SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA
Text: No file text available


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PDF 5KE10-TP/AP/BP DO-201AE 5KE100-TP/AP/BP 5KE100A-TP/AP/BP 5KE100C-TP/AP/BP 5KE100CA-TP/AP/BP Green SMBJ11CA BAS70WT S1B40 UF5406T MTZJ10A SMBJ14CA SMBJ16CA SMBJ160CA SMBJ13CA
2SA733AP

Abstract: 2N3055B 2sc945b 2SA733A S8550D sa15tp TPT5609 MP1010B s8050d S9012H
Text: No file text available


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PDF 5KE10-TP/AP/BP DO-201AE 5KE100-TP/AP/BP 5KE100A-TP/AP/BP 5KE100C-TP/AP/BP 5KE100CA-TP/AP/BP 2SA733AP 2N3055B 2sc945b 2SA733A S8550D sa15tp TPT5609 MP1010B s8050d S9012H
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