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LP2985AITP-3.0/NOPB Texas Instruments Micropower 150-mA Low-Noise Ultra-Low-Dropout Regulator in SOT-23 and DSBGA Packages 5-DSBGA -40 to 125
LP2985ITP-3.0/NOPB Texas Instruments Micropower 150-mA Low-Noise Ultra-Low-Dropout Regulator in SOT-23 and DSBGA Packages 5-DSBGA -40 to 125

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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
LP2985AITP-3.0/NOPB National Semiconductor Corporation Rochester Electronics 2,294 $0.51 $0.41
LP2985AITP-3.0/NOPB Texas Instruments Rochester Electronics 750 $0.45 $0.37
MTP30N06VL Motorola Semiconductor Products Bristol Electronics - -
NTP30N06LG ON Semiconductor Rochester Electronics 73 $0.76 $0.62
STP30N06EL ON Semiconductor Rochester Electronics - -
STP30N10F7 STMicroelectronics Avnet 0 $0.74 $0.63
STP30N10F7 STMicroelectronics Future Electronics 0 $1.03 $0.79
STP30N10F7 STMicroelectronics Future Electronics 0 $0.87 $0.69
STP30N65M5 STMicroelectronics Chip1Stop 50 $4.62 $2.63
STP30N65M5 STMicroelectronics Future Electronics 2,650 $6.89 $6.81
STP30N65M5 STMicroelectronics Farnell element14 7 £6.71 £4.01
STP30N65M5 STMicroelectronics Future Electronics 0 $4.36 $4.36
STP30N65M5 STMicroelectronics Future Electronics 0 $7.40 $4.84
STP30N65M5 STMicroelectronics Schukat electronic 0 €3.15 €2.45
STP30N65M5 STMicroelectronics Avnet 650 $4.99 $4.29
STP30N65M5 STMicroelectronics element14 Asia-Pacific 7 $9.91 $5.64
STP30N65M5 STMicroelectronics Chip1Stop 1,567 $7.14 $4.94
STP30N65M5 STMicroelectronics Rutronik 0 $3.20 $3.05
STP30NE06 STMicroelectronics Bristol Electronics 650 $1.65 $0.58
STP30NF10 STMicroelectronics RS Components 2,685 £0.95 £0.65
STP30NF10 STMicroelectronics Farnell element14 816 £0.92 £0.60
STP30NF10 STMicroelectronics Newark element14 674 $1.54 $0.70
STP30NF10 STMicroelectronics TME Electronic Components 3,303 $0.98 $0.40
STP30NF10 STMicroelectronics element14 Asia-Pacific 670 $1.90 $0.86
STP30NF10 STMicroelectronics ComS.I.T. - -
STP30NF10 STMicroelectronics Future Electronics 0 $1.83 $1.50
STP30NF10 STMicroelectronics Avnet 4,658 $0.72 $0.47
STP30NF10 STMicroelectronics Rutronik 0 $0.42 $0.42
STP30NF10 STMicroelectronics Schukat electronic 7,040 €0.76 €0.30
STP30NF10 STMicroelectronics Avnet - -
STP30NF10 STMicroelectronics Chip1Stop 3,750 $2.25 $0.55
STP30NF10 STMicroelectronics RS Components 1,850 £1.20 £0.65
STP30NF20 STMicroelectronics Chip1Stop 422 $2.04 $1.61
STP30NF20 STMicroelectronics ComS.I.T. - -
STP30NF20 STMicroelectronics TME Electronic Components 67 $2.05 $1.28
STP30NF20 STMicroelectronics RS Components 510 £1.63 £1.27
STP30NF20 STMicroelectronics Future Electronics 925 $2.67 $2.03
STP30NF20 STMicroelectronics Avnet 0 $1.28 $1.09
STP30NF20 STMicroelectronics New Advantage Corporation 6,540 $4.45 $4.11
STP30NM50N STMicroelectronics Chip1Stop 950 $8.59 $6.99

No Results Found

TP30N Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
HI SPEED, HI CURRENT, TO-220, TRANSISTOR

Abstract:
Text: SGS-THOMSON IIL IIO T ® *! STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP30N 05 S TP30N 05FI V dss 50 V 50 V RDS(on) 0 .0 5 n 0 .0 5 Q Id ' 30 A 18 A . . . . . AVALANCHE RU G G EDN ESS TECHNOLOG Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C LOW G ATE CHARGE HIGH CURR ENT CAPABILITY 175°C O PERATING TEM PERATURE FOR STANDARD PACKAGE . , AXIM UM RATINGS Sym bol P a ra m e te r STP30N 05 V V ds V a lu e S TP30N 05FI 50 50 ± 20 30 22


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PDF STP30N05 STP30N05FI TP30N ATT220 STP30N05/FI HI SPEED, HI CURRENT, TO-220, TRANSISTOR
Not Available

Abstract:
Text: „¢ Data Sheet M TP30N 06VL TMOS V Power Field Effect Transistor Motorola Preferred Device , for future use and best overall value. REV 4 M O TO RO LA © M otorola, Inc. 1996 M TP30N , temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data M TP30N06VL TYPICAL ELECTRICAL , Motorola TMOS Power MOSFET Transistor Device Data 3 M TP30N 06VL POWER MOSFET SWITCHING Switching , ) Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data M TP30N06VL


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PDF MTP30N06VL/D TP30N 21A-06
Not Available

Abstract:
Text: bol Param eter S TP30N 06 V ds V dgr V gs Id Id I d m (») Value STP30N 06FI 60 60 ± 20 30 22 120


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PDF STP30N06 STP30N06FI STP30N O-220 ISOWATT220 STP30N06/FI
IRFZ30

Abstract:
Text: Tl 1.67 62.5 300 °C/W °C S ee th e M TP30N 05E D e s ig n e r's D ata S heet fo r a co m p


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PDF IRFZ30 IRFZ32 IRFZ30. IRFZ32
7N90FI

Abstract:
Text: TP30N 06FI STK20N 06 STP25N 06 S TP25N 06FI STLT30 STLT30FI STP20N 06 S TP20N 06FI STK16N 06 STP19N , U Z11 BU Z11FI S TP30N 05 S TP30N 05FI B U Z11A STK22N 05 STP25N 05 STP25N 05FI BUZ10 STLT29


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PDF TP40N STP45N 05LFI Z11FI TP30N STK22N STP25N 7N90FI 4N80FI 8n80 9N80FI 8N80F 4N90F TP20N y 4m STK12N STK3055E
Not Available

Abstract:
Text: MAXIMUM RATINGS Sym bol Param eter Value S TP30N E06 V ds V dgr V gs Unit STP30N E06FP


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PDF STP30NE06 STP30NE06FP T0-220/T0-220FP STP30NE06/FP O-22QFP
Not Available

Abstract:
Text: ¿57 TYP E SGS-THOMSON ¡m era©«® N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss STP30N05 S TP30N05FI STP30N05 STP30N05FI RDS(on) Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RD s(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY ■100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW GATE CHARGE . HIGH CURRENT CAPABILITY â , .) ABSOLUTE MAXIMUM RATINGS Symbol P aram eter V alue S TP30N 05 V ds V dgr V gs Unit STP30N


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PDF STP30N05 TP30N05FI STP30N05FI STP30N05/FI ISQWATT220
Not Available

Abstract:
Text: ¿57 SGS-THOMSON ¡m era©«® STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V dss STP30N06 S TP30N06FI RDS(on) Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RD s(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY ■100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW GATE CHARGE . HIGH CURRENT CAPABILITY â , .) ABSOLUTE MAXIMUM RATINGS Symbol P aram eter V alue S TP30N 06 V ds V dgr V gs Unit STP30N


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PDF STP30N06 STP30N06FI TP30N06FI STP30N06/FI ISQWATT220
Not Available

Abstract:
Text: a ra m e te r V a lu e S TP30N E06 V ds Un it STP30N E06FP 60 60 ± 20 V V V 17 12 68 30 0.2


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PDF STP30NE06 STP30NE06FP T0-220/T0-220FP STP30N
Not Available

Abstract:
Text: *57 TYPE SGS-THOMSON ilLiCTIIMDe® s tp 3 0 n 0 5 STP30N 05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss R DS(on) Id STP30N 05 S TP30N 05FI 50 V 50 V < 0.05 a < 0.05 a 30 A 19 A · . . T Y P IC A L RDS(on) = 0.045 Q A V A LA N C H E R U G G ED T E C H N O LO G Y 100% A V A LA N C H E TE S TE D R E P E T IT IV E A V A LA N C H E D ATA A T 100°C LO W G A TE C H A R G E HIGH C U R R E N T C A P A B ILIT Y 175°C O P E R A T IN G T E M P E R A T U R E A


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PDF STP30N TP30N
Kelvin KM 300 resistor

Abstract:
Text: TP30N 08M TYPICAL CHARACTERISTICS Figure 2. Gate Threshold Voltage Variation with Temperature


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PDF b3b7254 Kelvin KM 300 resistor
12N60FI

Abstract:
Text: M T P 2 N 60E M TP2N 90 M T P 3 055 E M TP3055EL M TP30N 06EL M TP33N 10E M TP36N 06E M TP3N 100E M


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PDF 2SK1021 2SK1023 2SK1081 2SK1082 2SK1117 2SK1118 2SK1119 2SK1120 2SK1154 2SK1156 12N60FI K791 a4n50e 2N60E k2n50 p3n90 2SK1118 cross reference p3n60 P6N60 TP3055EL
M143206EVK

Abstract:
Text: No file text available


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PDF 2PHX14226-31 M143206EVK hall marking code A04 S/BIP/SCB345100/B/30/10/ferrite ei core 33A MPX4250 motorola transistor sj 5812 M68HC705X16 toshiba satellite laptop battery pinout differences uc3842a uc3842b BC413 ABB inverter motor fault code
8N60 equivalent

Abstract:
Text: No file text available


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PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N 8N60 equivalent IRFD1Z3 equivalent TP8N20 2N6823 TP8N10 smps cook circuit siemens semiconductor manual MTM5N90 designers datasheet irf8408 8N08
2007 - INFINEON marking

Abstract:
Text: ., Dynamic resistance ( tp=30ns ) RD ESD8V0L1B-02LRH - 0.3 - ESD8V0L2B. - 0.6


Original
PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 INFINEON marking BAR90-02LRH BFR193L3 diode Marking Code b3 ESD8V0L1B-02LRH ESD8V0L2B-03L IEC61000-4-4 TSLP
2009 - ESD0P2RF-02LRH

Abstract:
Text: - 1 - Dynamic resistance ( tp=30ns ) RD Series inductance LS nH ESD0P2RF


Original
PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD0P2RF-02LRH ESD0P2RF-02LS ESD0P2RF-02LRH ESD0P2RF-02LS BAR90-02LRH C125T-A IEC61000-4-4
MTM13N50E

Abstract:
Text: MTP50N05E MTP36N06E MTP50N06E MTP36N06E M TD3055EL MTD3055EL1 MTP3055EL M TP15N06EL M TP30N06EL M TP50N06EL , MTP12N10E MTP12N10EL MTP3055E M TP15N05EL M TP15N06EL M TP30N06EL ` In d ic a te s lh a t tw o d e v ic e , M TP15N05EL M TP15N05EL M TP15N06EL MTP36N06E M TP30N06EL M TP30N06EL M TP5N08L MTP3N50E MTP3N50E M


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PDF BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 p50n05 8n50e 24N40 motorola 20n50e Power MOSFET Cross Reference Guide TP50N05E IRF510 mosfet irf640 33N10E
2009 - Not Available

Abstract:
Text: ., Dynamic resistance ( tp=30ns ) RD Ω ESD8V0L1B. - 0.3 - ESD8V0L2B. - 0.6


Original
PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5
2000 - 220v AC voltage stabilizer schematic diagram

Abstract:
Text: No file text available


Original
PDF P390-ND P465-ND P466-ND P467-ND LNG901CF9 LNG992CFBW LNG901CFBW LNG91LCFBW 220v AC voltage stabilizer schematic diagram BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
BUV52

Abstract:
Text: =1.7Q tp=30ns See fig. 1 0.3 1 0.15 0.6 1.6 0.3 lis US US INDUCTIVE LOAD Symbol Parameter Test Conditions


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PDF BUV52 100-C A6W 08
2009 - ESD8V0L1B-02EL

Abstract:
Text: connected Dynamic resistance ( tp=30ns ) ESD8V0L1B. ESD8V0L2B. 1V - - ESD according to


Original
PDF IEC61000-4-2 IEC61000-4-4 IEC61000-4-5 ESD8V0L1B-02EL
2007 - BGF127

Abstract:
Text: between the 8 channels - 0.01 - - 1 - Dynamic resistance ( tp=30ns ) RD 1I


Original
PDF BGF127 IEC61000-4-2 BGF127 IEC61000
P50N05

Abstract:
Text: TP3055EL 60 M TP30N06EL 135 150 2 -4 12 40 180 1 -2 12 40 50 1 -2


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PDF BUZ11 BUZ11A BUZ20 BUZ21 BUZ71 BUZ71A TP50N06E MTP50M P50N05 P50N06 P50N05 p50n06 TP3055EL tp50n05e MTP36N06E
BUT60

Abstract:
Text: Rc=20n I b 1 =-Ibs =3 A Vbb = - 5 V tp=30ns see fig. 1 0.1 0.7 2.5 0.5 us tis us us ts tf tc


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PDF 2N6933/34/35 O-218 2N6933 2N6934 2N6935 BUT60 BD243 BD244 BYW100 2N6933/2N6934/2N6935 BUT60 BD243 2n693 BYW100 BD244 forte bd243 rise time
MTP n-channel mosfet to 220

Abstract:
Text: 0.18 0.05 0.028 15 25 M TP30N06EL M TP50N06EL ' Tc = 25 c '* P o w e r ra tin g w h e n m o


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PDF O-220 221D-02 T0-220AB 21A-06 O-251* O-252 69A-09 O-22QAB) TP12N10EL TA11N10ELSÙ MTP n-channel mosfet to 220 MTP3055EL TD3055EL 221A-06 motorola TO-252 Power MOSFETs Cross Reference Guide TP12N10 TP25N10
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