The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C

TOSHIBA DIODE Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
toshiba diode 3D

Abstract: HN2S01F HN2S01FU
Text:  TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE HN2S01FU LOW , Temperature Range Topr -40-100 °C * : This is the Maximum Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. US6 Unit , . ANODE 5. ANODE 6. ANODE 3d 36 3 5 3 4 JEDEC EIAJ TOSHIBA 1-2T1C Weight : 6.2mg ELECTRICAL , ASSIGNMENT (TOP VIEW) MARKING 6 5 4 6 5 4 1997-08-18 1/2 TOSHIBA HN2S01FU If - VF IR - VR 0.1 0.2 0.3


OCR Scan
PDF HN2S01 HN2S01FU HN2S01F toshiba diode 3D HN2S01FU
TOSHIBA "ULTRA HIGH SPEED" DIODE

Abstract: 015G
Text: HN1D02F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D02F Ultra High Speed Switching , Maximum (peak) reverse voltage Surge current (10ms) 1-3K1B JEDEC EIAJ TOSHIBA Weight: 0.015g (*) This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Maximum Ratings per diode is 75% of the single diode one. Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C) ° Symbol Test Circuit


Original
PDF HN1D02F HN1D02F 961001EAA2' TOSHIBA "ULTRA HIGH SPEED" DIODE 015G
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F H mN'm n n i F mm w LOW VOLTAGE HIGH SPEED SWITCHING APPLICATION · · HN2S01F is composed of 3 , -100 Operating Temperature Range °C Topr * : This is the Maximum Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one , 4 1997 08-18 1/2 - TOSHIBA HN2S01F If - Vf IR - Vr REVERSE VOLTAGE V r (V) Ct


OCR Scan
PDF HN2S01F HN2S01F 100mA
1SS348

Abstract: No abstract text available
Text:  TOSHIBA 1SS348 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS348 LOW VOLTAGE , Capacitance Ct VR = 0, f = 1MHz — 45 100 pF MARKING _B_ K 9 ^-ET _961001EAA2 0 TOSHIBA is continually , stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss , TOSHIBA products are used within specified operating ranges as set forth in the most recent products


OCR Scan
PDF 1SS348 100mA 961001EAA2 1SS348
HN2D02FU

Abstract: No abstract text available
Text: HN2D02FU TOSHIBA Diode Silicon Epitaxial Planar Type HN2D02FU Ultra High Speed Switching , single diode one. 1-2T1E TOSHIBA Weight: 6.8mg Electrical Characteristics (Q1, Q2, Q3 Common , Maximum (peak) reverse Voltage Surge current (10ms) * : This is maximum rating of single diode (Q1 , V µA 961001EAA2 · TOSHIBA is continually working to improve the quality and the reliability , buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which


Original
PDF HN2D02FU HN2D02FU 961001EAA2'
Not Available

Abstract: No abstract text available
Text: 1SV313 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SV313 VCO FOR UHF BAND RADIO Unit in mm , −55~125 °C Storage Temperature Range JEDEC EIAJ TOSHIBA ELECTRICAL CHARACTERISTICS , Ω — VR = 1 V, f = 470 MHz MARKING 000707EAA2 · TOSHIBA is continually working to , the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of , failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In


Original
PDF 1SV313
Not Available

Abstract: No abstract text available
Text: HN1D01F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01F Ultra High Speed Switching , current (10ms) (*) This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Maximum Ratings per diode is 75% of the single diode one. JEDEC EIAJ TOSHIBA Weight: 0.015g SC-74 1-3K1A Electrical , Test Condition Unit V µA 961001EAA2 · TOSHIBA is continually working to improve the


Original
PDF HN1D01F
Not Available

Abstract: No abstract text available
Text: 1SS397 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS397 High Voltage, High Speed Switching , Surge current (10ms) Storage temperature range JEDEC SC-70 EIAJ 1-2P1D TOSHIBA , · TOSHIBA is continually working to improve the quality and the reliability of its products , TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In


Original
PDF 1SS397 SC-70 961001EAA2'
Not Available

Abstract: No abstract text available
Text: 1SS399 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS399 High Voltage, High Speed Switching , rating × 1.5 JEDEC EIAJ SC-61 TOSHIBA 2-3J1A Weight: 0.013g Electrical , voltage Reverse current Test Condition (Fig.1) Unit V µA 961001EAA2 · TOSHIBA is , to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA


Original
PDF 1SS399 SC-61 10msditions 961001EAA2'
1SS398

Abstract: No abstract text available
Text: 1SS398 TOSHIBA Diode Silicon Epitaxial Planar Diode 1SS398 High Voltage, High Speed Switching , rating × 0.7 TO-236MOD JEDEC SC-59 EIAJ 1-3G1G TOSHIBA Weight: 0.012g Electrical , voltage Reverse current Test Condition (Fig.1) Unit V µA 961001EAA2 · TOSHIBA is , to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA


Original
PDF 1SS398 SC-59 961001EAA2' 1SS398
HN2S01F

Abstract: HN2S01FU 12T1
Text:  TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE HN2S01FU LOW , Temperature Range Topr -40-100 °C * : This is the Maximum Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. ELECTRICAL , . CATHODE 1 c 3. CATHODE 2 c 4. ANODE 5. ANODE 3C: US6 6. ANODE 36 3 5 -3 4 JEDEC EIAJ TOSHIBA , (TOP VIEW) 6 5 4 MARKING 6 5 4 1997-08-18 1/2 TOSHIBA HN2S01FU If - VF IR - VR


OCR Scan
PDF HN2S01 HN2S01FU HN2S01F HN2S01FU 12T1
toshiba diode 3D

Abstract: HN2S01F
Text:  TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE H N 2 S 0 1 F LOW , Temperature Range Topr -40-100 °C * : This is the Maximum Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. ELECTRICAL , JEDEC EIAJ SC-74 TOSHIBA 1-3K1C Weight : 0.015g CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX , — 20 40 pF PIN ASSIGNMENT (TOP VIEW) MARKING 6 5 4 6 5 4 1997-08-18 1/2 TOSHIBA HN2S01F If


OCR Scan
PDF HN2S01F HN2S01F toshiba diode 3D
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F HN2S01F LO W VOLTAGE , Topr * : This is the Maximum Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. ELECTRICAL CHARACTERISTICS (Q1 Q2 Q3 COM M ON, Ta = 25°C) - 3s i_Ll SM6 JEDEC EIAJ SC-74 TOSHIBA 1-3K1C Weight : 0.015g 1. 2. 3 , TOSHIBA CAPACITANCE O r (pF) FORWARD CURRENT Ip- (A) O P3 < 33 33 P3 P3 33 P3


OCR Scan
PDF HN2S01F HN2S01F 100mA
Not Available

Abstract: No abstract text available
Text: TOSHIBA HN1D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 F ULTRA HIGH SPEED , Tstg -55-125 °C (*) This is the Maximum Ratings of single diode (Qi or Q2 or q3 or q4). In the case of using Unit 1 and Unit 2 independently or simultaneously, the Maximum Ratings per diode is 75% of the single diode one. ELECTRICAL CHARACTERISTICS (Q1# Q2, Q3, Q4 COMMON, Ta = 25°C) + 0.2 i - 0.3 + 0.2 , C 3 1* m- ZI6 □ 5 □ 4 JEDEC EIAJ SC-74 TOSHIBA 1-3K1A Weight : 0.015g CHARACTERISTIC SYMBOL TEST


OCR Scan
PDF HN1D01F
HN1D01F

Abstract: cd3m
Text:  TOSHIBA HN1D01F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 F ULTRA HIGH SPEED , °C Storage Temperature Tstg -55-125 °C (*) This is the Maximum Ratings of single diode (Qi or Q2 , Ratings per diode is 75% of the single diode one. ELECTRICAL CHARACTERISTICS (Q1# Q2, Q3, Q4 COMMON, Ta = , CATHODE ANODE ) o 1 c: 2d 3d 5 i* Am- zi6 □ 5 □ 4 JEDEC EIAJ SC-74 TOSHIBA 1-3K1A , VIEW) MARKING 1997-08-18 1/2 TOSHIBA HN1D01F Fig. 1 REVERSE RECOVERY TIME (trr) TEST CIRCUIT INPUT


OCR Scan
PDF HN1D01F HN1D01F cd3m
Not Available

Abstract: No abstract text available
Text: TOSHIBA HN2S01 FU TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE H N 2 S 0 1 FU , of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. J 1. 2. 3. 4. 5. 6. CATHODE CATHODE 1 c CATHODE 2 c ANODE 3C ANODE ANODE US6 JEDEC EIAJ TOSHIBA 1-2T1C Weight : 6.2mg -H- ELECTRICAL , TOSHIBA CAPACITANCE O r (pF) HN2S01FU 2/2


OCR Scan
PDF HN2S01 HN2S01F 100mA HN2S01FU
JP303

Abstract: No abstract text available
Text: TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01F Unit in , Operating Temperature Range -4 0 -1 0 0 °C Topr * : This is the Maximum Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. - ooi + - - 3s JLU 1. 2. 3. 4. 5. 6. CATHODE CATHODE CATHODE ANODE ANODE ANODE ■'i 1 c -K2C 3d SM6 JEDEC EIAJ SC-74 TOSHIBA 1-3K1C Weight


OCR Scan
PDF HN2S01F HN2S01F 100mA JP303
toshiba diode 3D

Abstract: 015G HN2S01F
Text:  TOSHIBA HN2S01F TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE H N 2 S 0 1 F LOW , Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. Unit in mm CHARACTERISTIC SYMBOL RATING UNIT Maximum (Peak , ANODE ANODE ANODE <-; CS Ö Ö + I 1 C 2 C 3d D 6 =] 5 =3 4 JEDEC EIAJ SC-74 TOSHIBA 1-3K1C , = 0, f = 1MHz — 20 40 pF PIN ASSIGNMENT (TOP VIEW) MARKING 6 5 4 6 5 4 1997-08-18 1/2 TOSHIBA


OCR Scan
PDF HN2S01F HN2S01F toshiba diode 3D 015G
33P33

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE HN2S01 FU H N 2 S 0 1 FU LO W , is the Maximum Ratings of single diode (Q1 or Q2 or Q3). In the case of using 2 or 3 diodes, the Maximum Ratings per diode is 75% of the single diode one. ELECTRICAL CHARACTERISTICS (Q1, Q2, Q3 CO M M ON Ta = 25°C) J 1. 2. 3. 4. 5. 6. US6 JEDEC EIAJ TOSHIBA 1-2T1C Weight : 6.2mg CA TH O D E , > 1997 08-18 - 1/2 TOSHIBA CAPACITANCE O r (pF) FORWARD CURRENT Ip- (A) O


OCR Scan
PDF HN2S01 HN2S01F 100mA HN2S01FU 33P33
JDV2S05E

Abstract: No abstract text available
Text: JDV2S05E TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S05E VCO for UHF band · Small , temperature range Weight: 0.0014 g 000707EAA1 · TOSHIBA is continually working to improve the quality , responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a , TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in


Original
PDF JDV2S05E 000707EAA1 JDV2S05E
forth

Abstract: MARKING toshiba TOSHIBA DIODE 1SS315
Text: 1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer , TOSHIBA Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics 1-1E1A , 2003-03-24 1SS315 2 2003-03-24 1SS315 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA , vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to , situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily


Original
PDF 1SS315 forth MARKING toshiba TOSHIBA DIODE 1SS315
1SS322

Abstract: No abstract text available
Text:  TOSHIBA 1SS322 TOSHIBA DIODE SILICON EPITAXIAL SC H OTT KY BARRIER TYPE 1SS322 LOW VOLTAGE , Temperature 125 EIAJ SC-70 Storage Temperature Range -55-125 TOSHIBA 1-2P1D Weight : 0.006g , A 9 B-H 961001EAA2 # TOSHIBA is continually working to improve the quality and the reliability of , , when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to


OCR Scan
PDF 1SS322 SC-70 25are 1SS322
1SV311

Abstract: No abstract text available
Text:  TOSHIBA 1SV311 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 S V 3 1 1 VCO FOR UHF BAND , °C MARKING 4 V 1 □ ESC JEDEC EIAJ TOSHIBA 1-1G1A ELECTRICAL CHARACTERISTICS (Ta = 25 , = 1V, f= 470MHz — 0.28 0.4 n 961001EAA1 • TOSHIBA is continually working to improve the , the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human


OCR Scan
PDF 1SV311 470MHz 1SV311
1SV237

Abstract: No abstract text available
Text:  TOSHIBA 1SV237 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE 1 S V 2 3 7 VHF-UHF BAND RF , EIAJ TOSHIBA 1-3J1A Weight : 0.013g ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL , 961001EAA2 # TOSHIBA is continually working to improve the quality and the reliability of its products , TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In


OCR Scan
PDF 1SV237 1SV237
Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1SS322 1 Unit in mm 2.1 ± 0.1 , EIAJ SC-70 TOSHIBA 1-2P1D Weight : 0.006g I. M I\ I\ JL /C ELECTRICAL CHARACTERISTICS (Ta = 25 , - TYP. MAX. UNIT 0.28 - V 0.36 - 0.54 0.60 - 5 M 18 25 pF 961001EAA2 TOSHIBA is continually , to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA


OCR Scan
PDF 1SS322 SC-70 SC-70
Supplyframe Tracking Pixel