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Part Manufacturer Description Datasheet Download Buy Part
LTC2656CIFE-L16#TRPBF Linear Technology LTC2656 - Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/°C Max Reference; Package: TSSOP; Pins: 20; Temperature Range: -40°C to 85°C
LTC1450LIG Linear Technology IC PARALLEL, WORD INPUT LOADING, 14 us SETTLING TIME, 12-BIT DAC, PDSO24, 0.209 INCH, PLASTIC, SSOP-24, Digital to Analog Converter
LTC2636CDE-LMI10#TRPBF Linear Technology LTC2636 - Octal 12-/10-/8-Bit SPI VOUT DACs with 10ppm/°C Reference; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C
LTC2636HDE-HZ10#TRPBF Linear Technology LTC2636 - Octal 12-/10-/8-Bit SPI VOUT DACs with 10ppm/°C Reference; Package: DFN; Pins: 14; Temperature Range: -40°C to 125°C
LTC2636IDE-HMX10#TRPBF Linear Technology LTC2636 - Octal 12-/10-/8-Bit SPI VOUT DACs with 10ppm/°C Reference; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C
LTC2636HMS-LMI10#PBF Linear Technology LTC2636 - Octal 12-/10-/8-Bit SPI VOUT DACs with 10ppm/°C Reference; Package: MSOP; Pins: 16; Temperature Range: -40°C to 125°C

TO-126 fairchild Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2008 - LM49830

Abstract:
Text: , TO-126 Fairchild Semiconductor BD13916STU Q1, Q3 200V, 12A N-Channel MOSFET, 150W , -35 Fairchild Semiconductor 1N5242BTR DG1, DG2, DG3, DG4, DG5, DG6, DG7, DG8 10V 5% 1W Zener diode, DO-41 Fairchild Semiconductor 1N4740A National Semiconductor LME49830TB U1


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PDF LME49830 EF125WT1 AN-1850 LM49830 Audio Power Amplifier MOSFET TOSHIBA high power fet audio amplifier schematic 300w power amplifier circuit diagram 150w audio amplifier circuit diagram class AB lm4702 OUTPUT STAGE INFORMATION 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM high power fet amplifier schematic
2008 - LM49830

Abstract:
Text: , TO-126 Fairchild Semiconductor BD13916STU Q1, Q3 200V, 12A N-Channel MOSFET, 150W , -35 Fairchild Semiconductor 1N5242BTR DG1, DG2, DG3, DG4, DG5, DG6, DG7, DG8 10V 5% 1W Zener diode, DO-41 Fairchild Semiconductor 1N4740A National Semiconductor LME49830TB U1


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PDF LME49830 EF125WT1 AN-1850 LM49830 150w audio amplifier circuit diagram class AB 2sk1058 2SJ162 12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM AN-1850 lm4702 OUTPUT STAGE INFORMATION transistor 2sj162 AN1645 450w power supply schematic diagram
2015 - 400w pfc

Abstract:
Text: capability of 110%, Mg_max is increased to 1.15 × 110% = 1.26 . TIDU789 – March 2015 Submit , Mg_ap = 1.3, which is greater than Mg_max = 1.26 . Any other Ln curve which is not shown in Figure 3


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PDF TIDA-00355 UCC28180 UCC25600 UCC27714 UCC28722 TLV70450 ISO/TS16949 400w pfc 230V ac to 36V dc converter circuit diagram rr 681k- 1kv capacitor UCC25600
2000 - QBD135

Abstract:
Text: BD136, BD138 and BD140 respectively 1 TO- 126 2.Collector 3.Base 1. Emitter NPN Epitaxial , Base-Emitter ON Voltage hFE Classification Classification hFE3 ©2000 Fairchild Semiconductor International , 150 175 TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD135/137/139 Package Demensions TO- 126 ±0.10 3.90 8.00 , ±0.20 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International


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PDF BD135/137/139 BD136, BD138 BD140 O-126 BD135 BD137 BD139 QBD135 bd139 bd135 to-126 BD13916S transistor cross reference TO-126 fairchild Cross-Reference DATE bd139 cross reference BD135 transistor BD135 NPN transistor
2000 - TO126

Abstract:
Text: BD135, BD137 and BD139 respectively 1 TO- 126 2.Collector 3.Base 1. Emitter PNP Epitaxial , hFE3 6 40 ~ 100 10 63 ~ 160 16 100 ~ 250 ©2000 Fairchild Semiconductor International Rev. A , TC[ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD136/138/140 Package Demensions TO- 126 ±0.10 3.90 8.00 ±0.30 , 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A


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PDF BD136/138/140 BD135, BD137 BD139 O-126 BD136 BD138 BD140 TO126 of ic BD140 bd135 to-126 BD138 10 BD139 pspice BD13610S bd140 Complement BD140 pnp transistor BD140 pspice BD136
2000 - BD37525STU

Abstract:
Text: =25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : BD375 : BD377 : BD379 1 TO- 126 , =2% Pulsed hFE Classification Classification hFE1 ©2000 Fairchild Semiconductor International 6 40 , Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 VCEO MAX. 100 BD379 BD377 BD375 BD375/377/379 Package Demensions TO- 126 ±0.10 3.90 , ±0.20 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International


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PDF BD375/377/379 BD376, BD378 BD380 BD375 BD377 BD379 O-126 BD37525STU BD376 BD377-10 bd379 BD37916STU
2000 - Not Available

Abstract:
Text: KSC2688 KSC2688 Color TV Chroma Output & Video Output 1 TO- 126 2.Collector 3.Base 1 , Classification hFE R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 G 160 ~ 250 ©2000 Fairchild Semiconductor International , TEMPERATURE Figure 3. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2688 Package Demensions TO- 126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX , Dimensions in Millimeters ©2000 Fairchild Semiconductor International Rev. A, February 2000 TRADEMARKS


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PDF KSC2688 O-126 KSC2688YSTSSTU KSC2688YSTU KSC2688OSTU KSC2688YS KSC2688OS
2000 - D882Y

Abstract:
Text: TO- 126 3 RAIL * Fairchild 1,000 piece Budgetary Pricing * A sample button will appear if , TO- 126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings , Fairchild Semiconductor International Rev. A, February 2000 KSD882 Typical Characteristics 2.0 , Fairchild Semiconductor International Rev. A, February 2000 KSD882 Typical Characteristics , Operating Areas Figure 8. Power Derating ©2000 Fairchild Semiconductor International Rev. A


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PDF KSD882 KSB772 O-126 PW10ms, Cycle50% KSD882 KSD882OS KSD882RS KSD882YS D882Y D882-y D882R TRANSISTOR D882-y KSD882YSTU D882-R
2000 - KSE340

Abstract:
Text: Fairchild Semiconductor International Rev. A1, December 2000 KSE340 Package Demensions TO- 126 , /A TO- 126 3 RAIL Line 1: $Y ( Fairchild logo) &3 (3-Digit Date Code) Line 3: KSE340 , Voltage · Suitable for Transformer · Complement to KSE350 1 TO- 126 2.Collector 3.Base 1. Emitter , , IC = 0 VCE = 10V, IC = 50mA 30 Min. 300 Max. 100 100 240 Units V µA µA ©2000 Fairchild , ] 13.06 16.10 ±0.20 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild


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PDF KSE340 KSE350 O-126 KSE340 KSE340S KSE340STSTU KSE340STU
2000 - bd677as

Abstract:
Text: Medium Power Darlington TR · Complement to BD676A, BD678A, BD680A and BD682 respectively TO- 126 2 , ) * Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed ©2000 Fairchild Semiconductor International Rev. A , [ C], CASE TEMPERATURE Figure 5. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD675A/677A/679A/681 Package Demensions TO- 126 ±0.10 3.90 8.00 , ±0.20 0.50 ­0.05 +0.10 Dimensions in Millimeters ©2000 Fairchild Semiconductor International


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PDF BD675A/677A/679A/681 BD676A, BD678A, BD680A BD682 O-126 BD675A BD677A BD679A bd677as BD681 cross reference 679a BD679AS
2008 - c3503d

Abstract:
Text: Complement to 2SA1381/KSA1381. Absolute Maximum Ratings* Symbol TO- 126 1 1. Emitter 2 , E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 © 2008 Fairchild Semiconductor , 2SC3503C TO- 126 TUBE hFE1 C grade 2SC3503DSTU 2SC3503D TO- 126 TUBE hFE1 D grade 2SC3503ESTU 2SC3503E TO- 126 TUBE hFE1 E grade 2SC3503FSTU 2SC3503F TO- 126 TUBE hFE1 F grade KSC3503CSTU C3503C TO- 126 TUBE hFE1 C grade KSC3503DSTU C3503D TO- 126


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PDF 2SC3503/KSC3503 150MHz 2SA1381/KSA1381. O-126 2SC3503/KSC3503 c3503d C3503-D 2SC3503 2SC3503D c3503 C3503C C3503E 2sc3503 spice KSA1381 spice model KSC3503
2000 - KSC2690A

Abstract:
Text: KSA1220/KSA1220A 1 TO- 126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor , Classificntion Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 ©2000 Fairchild Semiconductor , Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area ©2000 Fairchild , Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2690/2690A Package Demensions TO- 126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10


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PDF KSC2690/2690A KSA1220/KSA1220A O-126 KSC2690 KSC2690A PW10ms, Cycle50% KSC2690AYS
2000 - TO-126 fairchild

Abstract:
Text: 1 TO- 126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum , O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A , Gain Bandwidth Product Figure 6. Safe Operating Area ©2000 Fairchild Semiconductor International , ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB772 Package Demensions TO- 126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20


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PDF KSB772 KSD882 O-126 PW10ms, Cycle50% KSB772 TO-126 fairchild
2000 - d1691

Abstract:
Text: ( Fairchild logo) &3 (3-Digit Date Code) Line 3: D1691-Y N/A KSD1691OS Full Production $0.316 TO- 126 , High Power Dissipation: PC = 1.3W (Ta=25°C) · Complementary to KSB1151 1 TO- 126 2.Collector 3 , % Pulsed hFE Classificntion Classification hFE 2 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400 ©2000 Fairchild , . Derating Curve of Safe Operating Areas ©2000 Fairchild Semiconductor International Rev. A, February , . Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD1691


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PDF KSD1691 KSB1151 O-126 PW10ms, Cycle50% KSD1691 KSD1691GS KSD1691OS KSD1691YS d1691 d1691-y D1691-G
2007 - A1381E

Abstract:
Text: Full thermal and electrical Spice models are available Complement to 2SC3503/KSC3503 1 TO- 126 2 , Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A 1 www.fairchildsemi.com 2SA1381/KSA1381 - , A1381E A1381F Package TO- 126 TO- 126 TO- 126 TO- 126 TO- 126 TO- 126 TO- 126 TO- 126 Packing Method TUBE , character as packing method. © 2007 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A 2 , . Base-Emitter On Voltage © 2007 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A 3


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PDF 2SA1381/KSA1381 -300V 150MHz 2SC3503/KSC3503 O-126 A1381E 2SA1381 pnp transistor crt high definition 2SC3503 A1381D KSA1381FSTU
2007 - Not Available

Abstract:
Text: FQA13N80_F109 N-Channel QFET® MOSFET 800 V, 12.6 A, 750 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar , electronic lamp ballasts. • 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A • Low , Continuous (TC = 25°C) 12.6 A IDM Drain Current - Pulsed VGSS Gate-Source Voltage , Avalanche Energy (Note 2) 1100 mJ IAR Avalanche Current (Note 1) 12.6 A EAR


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PDF FQA13N80
2007 - C3503D

Abstract:
Text: Full thermal and electrical Spice models are available Complement to 2SA1381/KSA1381. 1 TO- 126 2 , Classification Classification hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 © 2007 Fairchild , 2SC3503D 2SC3503E 2SC3503F C3503C C3503D C3503E C3503F Package TO- 126 TO- 126 TO- 126 TO- 126 TO- 126 TO- 126 TO- 126 TO- 126 Packing Method TUBE TUBE TUBE TUBE TUBE TUBE TUBE TUBE Remarks hFE1 C grade , "TU" could be replaced to other suffix character as packing method. © 2007 Fairchild Semiconductor


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PDF 2SC3503/KSC3503 150MHz 2SA1381/KSA1381. O-126 C3503D 2sc3503 c3503e C3503C 2SC3503D 2sc3503 spice 2SC3503F c3503-d
2000 - C3503D

Abstract:
Text: ( Fairchild logo) KSC3503DSTSSTU Full Production $0.153 TO- 126 3 RAIL &3 (3-Digit Date , KSC3503ESTU Full Production $0.153 TO- 126 3 RAIL N/A * Fairchild 1,000 piece Budgetary , Capacitance : Cre=1.8pF @ VCB=30V 1 TO- 126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon , hFE C 40 ~ 80 D 60 ~ 120 E 100 ~ 200 F 160 ~ 320 ©2000 Fairchild Semiconductor International Rev , Figure 5. Base-Emitter On Voltage Figure 6. Collector Output Capacitance ©2000 Fairchild


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PDF KSC3503 O-126 KSC3503 KSC3503CS KSC3503DS KSC3503DSTSSTU KSC3503DSTSTU KSC3503DSTU KSC3503ESTU C3503D c3503-d
2011 - TRANSISTOR BD435

Abstract:
Text: Silicon Transistor Physical Dimension TO- 126 Dimensions in Millimeters © 2011 Fairchild , Applications · Complement to BD434, BD436 and BD438 respectively TO- 126 1 1. Emitter 2 , BD433 TO- 126 BULK BD435S BD435 TO- 126 BULK BD435STU BD435 TO- 126 RAIL BD437S BD437 TO- 126 Remarks BULK * The suffix "S" of FSID denotes TO126 package , Storage Temperature - 65 to 150 °C © 2011 Fairchild Semiconductor Corporation BD433/435/437 Rev


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PDF BD433/435/437 BD434, BD436 BD438 O-126 BD433S BD433 BD435S BD435 TRANSISTOR BD435 TRANSISTOR 435 BD435 BD433S BD434 BD433 BD435S BD435STU BD437S
2000 - Not Available

Abstract:
Text: KSC2682 KSC2682 Audio Frequency Power Amplifier · Complement to KSA1142 1 TO- 126 2 , Classification hFE2 O 100 ~ 200 Y 160 ~ 320 ©2000 Fairchild Semiconductor International Rev. A, February , Fairchild Semiconductor International VCEOMAX Rev. A, February 2000 KSC2682 Typical , Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSC2682 Package Demensions TO- 126 ±0.10 3.90 8.00 ±0.30 3.25 ±0.20 14.20MAX ø3.20 ±0.10 11.00 ±0.20


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PDF KSC2682 KSA1142 O-126
2000 - KSA1156YS

Abstract:
Text: Breakdown Voltage · Low Collector Saturation Voltage · High Speed Switching 1 TO- 126 2.Collector 3 , 1 V V µs µs µs Max. Units V V µA µA µA mA hFE Classification Classification hFE ©2000 Fairchild , Fairchild Semiconductor International Rev. A, February 2000 KSA1156 Typical characteristics , 150 200 TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSA1156 Package Demensions TO- 126 ±0.10 3.90 8.00 ±0.30


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PDF KSA1156 O-126 O-126-3 /new/html/KSA1156 KSA1156YS to-126 pnp switching transistor -400v
2001 - BD436 cross reference

Abstract:
Text: BD433, BD435 and BD437 respectively 1 TO- 126 2.Collector 3.Base 1. Emitter PNP Epitaxial , Value Units VCEO VEBO IC ICP IB PC TJ TSTG ©2001 Fairchild Semiconductor Corporation Rev. A1 , Test: PW=300µs, duty Cycle=1.5% Pulsed ©2001 Fairchild Semiconductor Corporation Rev. A1, June , TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 BD434/436/438 Package Demensions TO- 126 ±0.10 3.90 8.00


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PDF BD434/436/438 BD433, BD435 BD437 O-126 BD434 BD436 BD438 BD436 cross reference IC 0247
2008 - TO126 package

Abstract:
Text: available • Complement to 2SA1381/KSA1381. Absolute Maximum Ratings* Symbol TO- 126 1 1 , C D E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 © 2008 Fairchild , * Marking Package Packing Method Remarks 2SC3503CSTU 2SC3503C TO- 126 TUBE hFE1 C grade 2SC3503DSTU 2SC3503D TO- 126 TUBE hFE1 D grade 2SC3503ESTU 2SC3503E TO- 126 TUBE hFE1 E grade 2SC3503FSTU 2SC3503F TO- 126 TUBE hFE1 F grade KSC3503CSTU


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PDF 2SC3503/KSC3503 150MHz 2SA1381/KSA1381. O-126 2SC3503/KSC3503 TO126 package 2SC3503
2000 - ksd 150 full safe

Abstract:
Text: Current High Power Dissipation : PC=1.3W (Ta=25°C) Complement to KSD 1691 1 TO- 126 2.Collector 3 , Classification hFE2 R 100 ~ 200 O 160 ~ 320 Y 200 ~ 400 ©2000 Fairchild Semiconductor International Rev. A , Safe Operating Area Figure 6. Derating Curve of Safe Operating Areas ©2000 Fairchild , TC[ C], CASE TEMPERATURE Figure 7. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSB1151 Package Demensions TO- 126 ±0.10 3.90 8.00 ±0.30 3.25


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PDF KSB1151 O-126 PW10ms, Cycle50% ksd 150 full safe K*D1691 ksd 75
2008 - KSA1381 spice model

Abstract:
Text: Complement to 2SC3503/KSC3503 Absolute Maximum Ratings* Symbol TO- 126 1 1. Emitter 2 , E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 © 2008 Fairchild Semiconductor , Number* Marking Package Packing Method Remarks 2SA1381CSTU 2SA1381C TO- 126 TUBE hFE1 C grade 2SA1381DSTU 2SA1381D TO- 126 TUBE hFE1 D grade 2SA1381ESTU 2SA1381E TO- 126 TUBE hFE1 E grade 2SA1381FSTU 2SA1381F TO- 126 TUBE hFE1 F grade


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PDF 2SA1381/KSA1381 -300V 150MHz 2SC3503/KSC3503 O-126 2SA1381/KSA1381 KSA1381 spice model A1381E 2SA1381 pnp transistor crt high definition 2SA1381 transistor 2SC3503 TO126 transistor 2SA1381CSTU 2SA1381ESTU 2SA1381FSTU
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