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TN3019A Fairchild Semiconductor Corporation Rochester Electronics 12,328 $0.18 $0.15
TN3019A ON Semiconductor Chip1Stop 4,766 $0.11 $0.09

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TN3019A datasheet (6)

Part Manufacturer Description Type PDF
TN3019A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
TN3019A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
TN3019A National Semiconductor NPN Medium Power Transistors Scan PDF
TN3019A National Semiconductor NPN General Purpose Amplifier Scan PDF
TN3019A_J05Z Fairchild Semiconductor TRANS GP BJT NPN 80V 1A 3TO-226 BULK Original PDF
TN3019A_NL Fairchild Semiconductor NPN General Purpose Amplifier Original PDF

TN3019A Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: 2N1474A 2N1475 2N1491 2N1492 2N1505 2N1506 TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A PN2369A PN2369A PN2369A PN2369A PN2369A PN2369A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A TN3019A PN2907 PN2222 PN2222 PN2222 PN2222 PN2222 PN2907A PN2907A , TN2219A TN3019A TN3019A TN2219A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN2219A TN3019A PN2907 TN2219A TN2219A TN2219A TN2219A PN2369A TN2219A TN2219A TN2219A TN2219A TN2219A


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PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
2002 - transistor 2N3563

Abstract: 2SK30 2n3819 cross reference 2sk41e 2SA726 transistor 2sc1417 2SC1026 2Sa1026 2SC2259 BC150 transistor
Text: 2N834A 2N847 2N858 2N859 2N860 2N861 2N862 Recommended Fairchild Device TN3019A TN2219A TN2219A TN3019A TN3019A PN2369A PN2369A PN2369A PN2907 PN2907 PN2222A PN2484 PN2484 PN2484 PN2484 PN2484 PN2484 , Recommended Fairchild Device PN2369A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A PN2369A PN2369A PN2369A PN2369A PN2369A PN2369A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A TN3019A , TN2907A TN2907A TN2219A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN2219A TN3019A TN3019A


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PDF
1996 - TN3019A

Abstract: No abstract text available
Text: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general , Thermal Resistance, Junction to Ambient Max Units TN3019A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN3019A N Discrete POWER & Signal Technologies (continued) Electrical , pF pF 400 400 pS 4.0 dB TN3019A NPN General Purpose Amplifier (continued , 60 40 Ceb 20 0 0.1 C cb 1 10 REVERSE BIAS VOLTAGE (V) P 12 50 TN3019A NPN


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PDF TN3019A O-226 TN3019A
Not Available

Abstract: No abstract text available
Text: H E M iQ Q N P U S T O R TN3019A TO-226 NPN General Purpose Amplifier This device is , TA = 25°C unless otherwise noted Characteristic Max Units TN3019A Rejc Total , Semiconductor Corporation w TN3019A Discrete POWER & Signal Technologies (continued) Electrical , 60 PF 400 400 pS 4.0 dB TN3019A NPN General Purpose Amplifier TN3019A TN3019A (continued) Test Circuit - 4 .0 V 50 V To Sampling Scope Rise Time < 5.0 ns Input Z


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PDF TN3019A O-226
1997 - TN3019A

Abstract: No abstract text available
Text: TN3019A C TO-226 BE NPN General Purpose Amplifier This device is designed for general , TN3019A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN3019A Discrete POWER & Signal Technologies , Cycle 1.0% MHz 12 60 80 pF pF 400 400 pS 4.0 dB TN3019A NPN General , ) 125 80 60 40 Ceb 20 0 0.1 C cb 1 10 REVERSE BIAS VOLTAGE (V) P 12 50 TN3019A , TEMPERATURE (o C) 125 150 TN3019A NPN General Purpose Amplifier (continued) Test Circuit -


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PDF TN3019A O-226 TN3019A
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: 2KBP06M 2KBP08M 2KBP10M TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A PN2369A PN2369A PN2369A PN2369A PN2369A PN2369A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A TN3019A TN2907A PN2222 PN2222 PN2222 PN2222 PN2222 TN2907A TN2907A TN2907A TN2907A TN2907A , Fairchild Closest Equivalent TN2907A TN2219A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN2219A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN2219A TN3019A TN2907A


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
1997 - Not Available

Abstract: No abstract text available
Text: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed , Semiconductor Corporation Max Units TN3019A 1.0 8.0 125 W mW/°C °C/W 50 °C/W , , Duty Cycle ≤ 1.0% MHz 12 80 pF 60 pF 400 400 pS 4.0 dB TN3019A NPN , BIAS VOLTAGE (V) 50 TN3019A NPN General Purpose Amplifier (continued) Typical , 75 100 TEMPERATURE (o C) 125 150 TN3019A NPN General Purpose Amplifier (continued


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PDF TN3019A O-226
2002 - CEB120

Abstract: No abstract text available
Text: TN3019A TN3019A C B TO-226 E NPN General Purpose Amplifier This device is designed , Max TN3019A 1.0 8.0 125 50 Units W mW/°C °C/W °C/W ã 1997 Fairchild Semiconductor Corporation 3-58 TN3019A NPN General Purpose Amplifier Electrical Characteristics Symbol Parameter TA = 25 , *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0% 3-59 TN3019A NPN General Purpose Amplifier , TN3019A NPN General Purpose Amplifier Typical Characteristics (continued) (continued) Small


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PDF TN3019A O-226 CEB120
si167

Abstract: No abstract text available
Text: TN3019A i= > E \I P 3 G H l I- O Discrete POWER & Signal Technologies ggM C O N O U C TO R TN3019A NPN General Purpose Amplifier This device is designed for general purpose medium , Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TN3019A 1.0 8.0 125 50 Units w m W /°C °C/W °C/W < s) 1997 Fairchild S em ico nd ucto r C orporation TN3019A NPN , dB * P u ls e T e st: P ulse W idth <300 p s , D uty C ycle < 1.0% TN3019A NPN General


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PDF TN3019A si167
1997 - bc337 cross-reference

Abstract: bc337-16 bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings , New products collector currents to 500 mA. Sourced from Product selection and Process 12. See TN3019A , and Process 12. See TN3019A for characteristics. parametric search Cross-reference back to top search


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PDF BC337-16 BC337-25 TN3019A BC337 BC33716TA BC33716BU bc337 cross-reference bc337 fairchild bc337-25 BC-337-16 bc33716 BC33725 BC33716 cross
1997 - transistor TD-100 le

Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
Text: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed , Corporation Max Units TN3019A 1.0 8.0 125 W mW/°C °C/W 50 °C/W (continued , 1.0% MHz 12 80 pF 60 pF 400 400 pS 4.0 dB TN3019A NPN General , - AMBIENT TEMPERATURE (° C) 125 0 0.1 1 10 REVERSE BIAS VOLTAGE (V) 50 TN3019A , TN3019A NPN General Purpose Amplifier (continued) Test Circuit 50 V - 4.0 V IC Rb


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PDF TN3019A O-226 transistor TD-100 le pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
common collector amplifier circuit designing

Abstract: bd113 npn 4111 25CC TN3019A
Text: tß Discrete POWER & Signal National „ ■, . Technologies Semiconductor'" TN3019A NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings* ta = 25*C unless otherwise noted Symbol Parameter Value Units VcEO , TN3019A Po Total Device Dissipation 1.0 w Derate above 25 C 8.0 mW/°C R»jc Thermal Resistance


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PDF TN3019A LS01130 00MQL37 D113a 00M0b3Ã common collector amplifier circuit designing bd113 npn 4111 25CC TN3019A
1997 - Not Available

Abstract: No abstract text available
Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0


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PDF BC337-16 BC337-25 BC337-16 TN3019A
1285_TN3019A

Abstract: No abstract text available
Text: F = A in C H I L .D S Ê M (C O N D U C T O R im 1285_ TN3019A (WAFER SALES) NPN GENERAL PURPOSE AMPLIFIER B vceo . . . . 80 V (Mfn) @ Ic = 10 mA H f e . 100 (Min) - 300 (Max) @ Ic = 150 mA, VCE = 10 V 30.0 mils (762.0 urn) 30.0 mils (762.0 urn) ABSOLUTE MAXIMUM RATINGS (0 P rocess 1 2 TEMPERATURES Operating Junction Temperature VOLTAGES & CURRENTS V c e o Collector-Emitter Voltage V c b o Collector-Base Voltage Vebo Emitter-Base Voltage Ic Collector Current (Continuous) -55


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PDF TN3019A 300us, 1285_TN3019A
1997 - C 337-25

Abstract: C 33725 BC337-25 NPN general purpose transistor BC337 BC337-16 BC337 NPN transistor datasheet bc33716 BC337 BC33725 BC-337-16
Text: BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0 V IC


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PDF BC337-16 BC337-25 TN3019A BC337-16 C 337-25 C 33725 BC337-25 NPN general purpose transistor BC337 BC337 NPN transistor datasheet bc33716 BC337 BC33725 BC-337-16
mpsa06 539

Abstract: No abstract text available
Text: Test Conditions Process No. TO-92 (92) 150 150 1.0 500 12 12 (5-39) 120 I TN3019A


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PDF PN3568 MPS80S MPSA05 MPSA06 TN5320A TN3440A TN6714A O-226 mpsa06 539
PN3568

Abstract: TN6705A TN5320A TN3440A TN3019A TN6715A MPSA06 MPSA05 MPS805 TO-226
Text: NPN Transistors Discrete POWER & Signal MLÊ National Technologies Semiconductor1" ^ ^¡^ powe|p Device No. Case Style V cbo (V) Min V ceo (V) Min V ebo (V) Min 'cbo y (nA)@ " Max hfe @ 'c & vce Min Max (mA) (V) V V yce(sat) be(sat) i (V) & (V) 0 c Max Min Max c* (PF) Max *t , (MHz) @ C Min Max '(ol) (us) Max Test Conditions Process No. PN3568 TO-92 (92) 80 60 5 50 40 40 30 1 40 120 150 1 0.25 150 20 60 600 50 12 TN3019A TO-226 (99) 140 80 7 10 90 50 1 10 90 10 10 100


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PDF PN3568 TN3019A O-226 MPS805 MPSA05 MPSA06 TN5320A TN3440A TN6705A TN6715A TO-226
1997 - Not Available

Abstract: No abstract text available
Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0


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PDF BC337-16 BC337-25 BC337-16 TN3019A
2002 - PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor PNP 2N3904 2n3904 TRANSISTOR PNP 2N3906 NPN Transistor TRANSISTOR 3182 PNP switching transistor 2N3906 transistor 338 switching transistor
Text: . 3-52 TN3019A NPN GPA


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PDF PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor PNP 2N3904 2n3904 TRANSISTOR PNP 2N3906 NPN Transistor TRANSISTOR 3182 PNP switching transistor 2N3906 transistor 338 switching transistor
1997 - C 337-25

Abstract: BC337-16 BC337-25 C 33725 bc33716 TN3019A BC-337-16 bc337 fairchild transistor BC337 BC33725
Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0


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PDF BC337-16 BC337-25 BC337-16 TN3019A C 337-25 BC337-25 C 33725 bc33716 BC-337-16 bc337 fairchild transistor BC337 BC33725
1997 - OF TRANSISTOR BC337

Abstract: TRANSISTOR BC337-25 transistor 33725 TN3019A bc337 m transistor BC337-16 F63TNR CBVK741B019 BC337-25 BC337-16
Text: BC337-16 / BC337-25 BC337-16 BC337-25 E B TO-92 C NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 12. See TN3019A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 45 V VCES Collector-Base Voltage 50 V VEBO Emitter-Base Voltage 5.0


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PDF BC337-16 BC337-25 BC337-16 TN3019A OF TRANSISTOR BC337 TRANSISTOR BC337-25 transistor 33725 bc337 m transistor BC337-16 F63TNR CBVK741B019 BC337-25
2N5769

Abstract: 2N3704 pN2369 national MPS805 2N4124 2n5306 NPN 2N3391A 2N5210 national tn3725a TN67
Text: Signal Technologies NPN Medium Power Device No. PN3568 TN3019A MPS805 Case Style VCBO


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PDF 2N5769 PN2369 PN2369A PN4275 PN5134 TN3725A O-226 D44C8 O-220 D44H1 2N5769 2N3704 pN2369 national MPS805 2N4124 2n5306 NPN 2N3391A 2N5210 national tn3725a TN67
2002 - MPSA92(KSP92) equivalent

Abstract: BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
Text: 0.25 100 10 TN3019A 80 140 7 1 100 300 10 150 0.5 500 50


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PDF OT-223 BCP68 FZT649 NZT6714 PZT3904 PZT2222A NZT6715 BCP54 KSC2785 KSC2784 MPSA92(KSP92) equivalent BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
2002 - TRANSISTORS BJT bc548

Abstract: jfet selection guide J210 D2 PAK TN2102A PN4302 FJN965 BJT BC546 MPF102 JFET data sheet ks3302 KSP13
Text: FPN660 TN2102A TN5320A MPSW06 MPSW56 TN3019A TN4033A TN6729A TN6717A TN6707A ZTX614 TN6718A


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PDF OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK TN2102A PN4302 FJN965 BJT BC546 MPF102 JFET data sheet ks3302 KSP13
1999 - ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
Text: No file text available


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PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 DIODE 1N4148 LL-34 MPSA92(KSP92) equivalent
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