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TN2219A Fairchild Semiconductor Corporation Rochester Electronics 1,981 $0.34 $0.28
TN2219A National Semiconductor Corporation Bristol Electronics 726 $0.53 $0.16

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TN2219A datasheet (25)

Part Manufacturer Description Type PDF
TN2219A Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
TN2219A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
TN2219A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
TN2219A Fairchild Semiconductor NPN General Purpose Amplifier Original PDF
TN2219(A) Others Silicon NPN Transistor Original PDF
TN2219A Central Semiconductor Power Transistors TO-237 Case Scan PDF
TN2219A Continental Device India TO-237 Plastic Package Transistors Scan PDF
TN2219A Continental Device India Semiconductor Device Data Book 1996 Scan PDF
TN2219A Micro Electronics Medium Power Amplifiers and Switches Scan PDF
TN2219A Micro Electronics Semiconductor Device Data Book Scan PDF
TN2219A Others Semiconductor Master Cross Reference Guide Scan PDF
TN2219A Others Shortform Transistor Datasheet Guide Scan PDF
TN2219A Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
TN2219A Others Basic Transistor and Cross Reference Specification Scan PDF
TN2219A Others Shortform Transistor PDF Datasheet Scan PDF
TN2219A National Semiconductor NPN Transistors Scan PDF
TN2219A National Semiconductor General Purpose Amplifiers and Switches Scan PDF
TN2219A National Semiconductor General Purpose Amplifiers and Switches Scan PDF
TN2219A National Semiconductor NPN Transistors Scan PDF
TN2219A National Semiconductor NPN General Purpose Amplifier Scan PDF

TN2219A Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: TN2219A FAIRCHILD S E M IC O N D U C TO R ™ TN2219A NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA , TA = 25°C unless otherwise noted C h aracteristic M ax Units TN2219A Rejc Total , Fairchild Semiconductor Corporation TN2219A , Rev B (continued) Electrical Characteristics TA = , , Duty Cycle < 2.0% TN2219A NPN General Purpose Amplifier


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PDF TN2219A PN2222A
1N4548

Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: 2N1474A 2N1475 2N1491 2N1492 2N1505 2N1506 TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A PN2369A PN2369A PN2369A PN2369A PN2369A PN2369A TN2219A TN2219A TN2219A TN2219A , PN2907A PN2907A PN2907A PN2907A PN2907A PN2907A TN2219A TN2219A TN2219A TN2219A 2N1507 2N1508 , TN2219A TN3019A TN3019A TN2219A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN2219A TN3019A PN2907 TN2219A TN2219A TN2219A TN2219A PN2369A TN2219A TN2219A TN2219A TN2219A TN2219A


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PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
1997 - PN2222A

Abstract: TN2219A
Text: TN2219A C TO-226 BE NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted , TN2219A 1.0 8.0 125 mW mW/°C °C/W 50 °C/W TN2219A Discrete POWER & Signal , Test: Pulse Width 300 µs, Duty Cycle 2.0% TN2219A NPN General Purpose Amplifier Fairchild


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PDF TN2219A O-226 PN2222A TN2219A
SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: 2KBP06M 2KBP08M 2KBP10M TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A PN2369A PN2369A PN2369A PN2369A PN2369A PN2369A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A , Fairchild Closest Equivalent TN2907A TN2219A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN2219A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN2219A TN3019A TN2907A TN2219A TN2219A TN2219A TN2219A PN2369A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A


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PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
2002 - transistor 2N3563

Abstract: 2SK30 2n3819 cross reference 2sk41e 2SA726 transistor 2sc1417 2SC1026 2Sa1026 2SC2259 BC150 transistor
Text: 2N834A 2N847 2N858 2N859 2N860 2N861 2N862 Recommended Fairchild Device TN3019A TN2219A TN2219A , Recommended Fairchild Device PN2369A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A PN2369A PN2369A PN2369A PN2369A PN2369A PN2369A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN3019A TN3019A , TN2907A TN2907A TN2219A TN2219A TN2219A TN2219A TN2219A TN2219A TN3019A TN3019A TN2219A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN3019A TN2219A TN3019A TN2907A TN2219A TN2219A TN2219A TN2219A PN2369A


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PDF
1996 - PN2222A

Abstract: TN2219A
Text: N TN2219A C TO-226 BE NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See , Thermal Resistance, Junction to Ambient Max Units TN2219A 1.0 8.0 125 mW mW/°C °C/W 50 °C/W TN2219A Discrete POWER & Signal Technologies (continued) Electrical , Time I B1 = IB2 = 15 mA 60 ns *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% TN2219A


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PDF TN2219A O-226 PN2222A TN2219A
2002 - tn2219a

Abstract: TN2222
Text: TN2219A TN2219A (TN2222A) C B TO-226 E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO , Max TN2219A 1.0 8.0 125 50 Units W W/°C °C/W °C/W ã 1997 Fairchild Semiconductor Corporation 3-36 TN2219A NPN General Purpose Amplifier Electrical Characteristics Symbol Parameter TA = 25


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PDF TN2219A TN2222A) O-226 PN2222A tn2219a TN2222
1997 - PN2222A

Abstract: TN2219A
Text: TN2219A TN2219A C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless , TN2219A 1.0 8.0 125 W mW/°C °C/W 50 °C/W TN2219A , Rev B (continued) Electrical , 60 ns *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% TN2219A NPN General Purpose


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PDF TN2219A O-226 PN2222A TN2219A
1997 - TN2222

Abstract: TN2219A CBVK741B019 F63TNR PN2222A PN2222N TN2222A transistor A1 HB
Text: TN2219A TN2219A (TN2222A) C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25 , Corporation Max Units TN2219A 1.0 8.0 125 W W/°C °C/W 50 °C/W (continued , IB2 = 15 mA 60 ns *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% TN2219A NPN


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PDF TN2219A TN2222A) O-226 PN2222A TN2222 TN2219A CBVK741B019 F63TNR PN2222N TN2222A transistor A1 HB
Not Available

Abstract: No abstract text available
Text: TN2219A m m -jm t t p P i ' L J | 1 f^| ^ y i C Q N P U C T O R -m Discrete POWER & Signal Technologies TN2219A C B E ' TO-226 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch req jiring collector currents up to 500 mA. Sourced from Process 19 , °C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TN2219A T- Units , ucto r C orporation TN2219A NPN General Purpose Amplifier (continued) Electrical


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PDF TN2219A O-226 PN2222A
TN2219A

Abstract: PN2222A
Text: < o> CM CS Discrete POWER & Signal National Technologies Semiconductor" TN2219A NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* TA - 25*C unless otherwise noted Symbol Parameter Value Units VcEO Collector-Emitter Voltage 40 , . Thermal Characteristics TA = 25'C unless otherwise noted Symbol Characteristic Max Units TN2219A Pd


OCR Scan
PDF TN2219A PN2222A b5D113D TN2219A
CENW64

Abstract: 2n6722
Text: Power Transistors TO-237 Case O z PNP 2N6726 2N6727 2N6728 2N6729 2N6730 TYPE ic PD BVCBO BVCEO *BVggg hFE ® ic V CE(SAT) ® IC ft (MHz) MIN (A) NPN 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722 2N6723 2N6724 2N6725 2N6731 2N6733 2N6734 2N6735 2N6737* CENW01 CENW01A CENW05 CENW06 CENW07 CENW10 CENW13 CENW14 CENW42 TN2102 TN2219A TN2905A TN3019 TN3020 TN3053 TN3724* TN3725" CENW51 CENW 51A CENW55 CENW56 CENW57 CENW60 CENW63 CENW64 CENW92 2N6732 MAX (W


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PDF O-237 2N6726 2N6727 2N6728 2N6729 2N6730 2N6714 2N6715 2N6716 2N6717 CENW64 2n6722
1997 - TN2222

Abstract: No abstract text available
Text: TN2219A TN2219A (TN2222A) C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings* Symbol TA = 25 , Semiconductor Corporation Max Units TN2219A 1.0 8.0 125 W W/°C °C/W 50 °C/W , ≤ 2.0% TN2219A NPN General Purpose Amplifier TO-226AE Tape and Reel Data TO -226AE


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PDF TN2219A TN2222A) O-226 PN2222A TN2222
MMBT4402

Abstract: 2N2907 SOT-23 tn2905 TIS97 PN4121 TN2219A pn4122 MARKING FY T0-92 2N2907 TO-92
Text: bflE ]> ■bS01130 □□3TS2D lb? «NSCS General Purpose Amplifiers and Switches (continued) NATL SENICOND (DISCRETE) VCEO(sutt) (Volts) Min Devices lc (mA) Max t»FE@'c fT@lc NF (dB) Max Package P0 (Amb) (mW> @25°C HPN PNP Min Max mA (MHz) Min mA 40 PN3567 500 40 120 150 60 50 T0-92(92) 625 PN3569 500 100 300 150 60 50 TO-92(92) 625 TIS97 200 250 700 0.1 200 10 T0-92(97) 625 TN2219A 500 100 300 150 300 20 T0-237(91) 850 2N2904 600 40 120 150 200 50 TO-39 600 2N2905 600


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PDF bS01130 PN3567 T0-92 PN3569 TIS97 TN2219A T0-237 2N2904 2N2905 MMBT4402 2N2907 SOT-23 tn2905 TIS97 PN4121 TN2219A pn4122 MARKING FY 2N2907 TO-92
Not Available

Abstract: No abstract text available
Text: Power Transistors TO-237 Case TYPE NO. ic PD BVCBO BVCEO *b v c e s (A) NPN 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722 2N6723 2N6724 2N6725 2N6731 2N6733 2N6734 2N6735 2N6737* CENW01 CENW01A CENW05 CENW06 CENW07 CENW10 CENW13 CENW14 CENW42 TN2102 TN2219A TN2905A TN3019 TN3020 TN3053 TN3724" TN3725* CENW51 CENW51A CENW55 CENW56 CENW57 CENW60 CENW63 CENW64 CENW92 2N6732 PNP 2N6726 2N6727 2N6728 2N6729 2N6730 MAX hRE ® Ic VCE(SAT) @ IC fT m 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0


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PDF O-237 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722
1501A50

Abstract: National Pn2907 pN3638A transistors tn2905 2N4403 NATIONAL SEMICONDUCTOR T0237
Text: bôE ]> b S ü ll3 G High Speed Saturated Switching Transistors (continueai 3 WATI Ü D B 'lsaD flüb rrH T/-Akin /n INSCS Devices VGEO(SKt) (Volts) Min 40 NPN TN2219A PNP hpE @ lc VC£(*at) ®(C 4 *» W@»c to# (MHz) (ns) (Volts) (ns) Max Max mA Min fflA Max mA mA Min 35 285 90 260 300 255 255 300 255 100 150 150 100 60 150 170 170 18 18 70 18 150 500 10 10 150 150 10 150 150 50 50 150 500 50 300 300 10 10 10 10 100 40 50 100 50 100 100 100 100 70 150 100 60 150 30 100 40 40 30 40


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PDF TN2219A T0-237 T0-39 T0-92 O-236* 1501A50 National Pn2907 pN3638A transistors tn2905 2N4403 NATIONAL SEMICONDUCTOR T0237
2010 - npn 100n 1a

Abstract: KT922A 2N2650 2S01733 STXB 2SC34210 2S0774 2n697a 750M10 2n3253
Text: RF POWER SILICON NPN Item Number Part Number Manufacturer Ic Max (A) fT (Hz) V(BR)CEO (V) PD Max (W) hFE Min Max ICBO Max (A) t, Max (8) tf Max Toper Max .eC) is) Package Style I(C) < 1 A, (Co nt' d) Natl Semi See Index Micro Elecs Natl Semi See Index V/O Electro Elec Trans Solid Stlnc Sanyo Elect PhilipsElec Philips~!ec 5 10 TN221BA 2N55B1 TN2219A TN2219A 2N55B2 KT922A 2SCB22 2SC822 2SC37BO BLX97 2N697A BUY11 BUY11 BLV20 2N3375 2N3375 2N3375 ~t


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PDF TN221BA 2N55B1 TN2219A 2N55B2 KT922A 2SCB22 2SC822 2SC37BO BLX97 npn 100n 1a 2N2650 2S01733 STXB 2SC34210 2S0774 2n697a 750M10 2n3253
TIS90

Abstract: MPS6566 TIS97
Text: NATL SEMICOND (DISCRETE) 22E D bS01130 D03777M 7 NPN General Purpose Transistors by Ascending Vceo (continued) Part Type PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 2N2270 2N2586 2N3827 2N5962 2N930 2N930A BCF81 BCW66F BCW72 BCW81 BCX70G BCX70H BCX70J MMBT100 MMBT100A MMBT3642 MMBT3693 MMBT3694 MMBT5962 MMBT930A MMBTA18 MPS3693 M PS3694 MPS3826 MPS3827 MPS6564 MPS6565 MPS6566 MPS6575 MPS6576 MPSA18 PN100 PN100A PN3642 PN3693 PN3694 PN930 2N3053 2N3416 2N3417 2N4409 2N5209 2N5210


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PDF bS01130 D03777M PN5816 TIS90 TIS92 TIS97 TN2218A TN2219A 2N2270 2N2586 MPS6566
2N2210

Abstract: transistor 2N2210 TN2218A TIS92 PN3694 2N3827 TIS90 MPS6564 2N2586 2N5962
Text: NATL SEMICOND (DISCRETE) 5SE D ■bS01130 D037774 7 ■T-2~7~QI NPN General Purpose Transistors by Ascending Vceo (continued) Part Type Vceo(V) Vcbo (V) ■Ufo Ic/Vce Ft (MHz) Package Min Min Min Max (mA/V) Min PN5816 40 50 100 200 2/2.0 100 TO-92 TIS90 40 40 100 300 50/2.0 TO-92 TIS92 40 40 100 300 50/2.0 TO-92 TIS97 40 250 700 0.1/5.0 TO-92 TN2218A 40 75 40 120 150/10 250 TO-237 TN2219A 40 75 100 300 150/10 60 TO-237 2N2270 45 60 50 200 150/10 100 TO-39 2N2586 45 60 120 360 0.01


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PDF bS01130 D037774 PN5816 TIS90 TIS92 TIS97 TN2218A O-237 TN2219A 2N2210 transistor 2N2210 PN3694 2N3827 MPS6564 2N2586 2N5962
MPSD05

Abstract: PN2906 PN2221A PN2221 MSB492 MPSD55 MPSA56 MPSA55 MPSA06 TN4032
Text: 10 TN4036 TN2219 N TO-237A 2000 □ 0.8 30 100 300 150 10 0.4 0.15 250 8 TN2219A N TO-237A 2000 â


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PDF MPSA05 O-92A MPSA55 MPSA06 MPSA56 MPSA55 MPSA05 MPSA56 MPSD05 PN2906 PN2221A PN2221 MSB492 MPSD55 TN4032
TN393

Abstract: TN391 TN3742 TN368 TN3053 TN3020 TN3019 TN2270 TN2219A TN2219
Text: TN2219A 75 40 6 Ô.75 0.6 0.01 60 40 500 10 0.3 0.6 1.2 150 8 300 20 TO-237-2 50 150 1 1 2


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PDF TN2219 O-237-2 TN2219A TN391 O-237 TN392 TN393 TN3742 TN368 TN3053 TN3020 TN3019 TN2270
2N2369 SOT-23

Abstract: pn4122 2N708 2N3905 2N3906 2N3467 2N4403 MMBT3906 MMBT4403 TN2219A
Text: bflE ]> t.S0113Ü 0031530 ÖOb «NSCS VcEO(snst) (Volts) Min Devices "en (ns) Max VC£(sat) @'c & 'b fx (MHz) Min Package PD(Amfc> (mW) @25°C NPN PMP (US) Max mA Min mA (Volts) Max mA mA 40 TN2219A 35 285 150 100 150 0.3 150 15 300 T0-237(91) 850 2N3467 40 90 500 40 500 0.5 500 50 175 TO-39 1000 2N3905 70 260 10 50 10 0. 25 10 1.0 200 T0-92(92) 625 2N3906 70 300 10 100 10 0.25 10 1.0 250 T0-92(92) 625 2N4402 35 255 150 50 150 0.4 150 15 150 T0-92(92) 625 2N4403


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PDF S0113Ã TN2219A T0-237 2N3467 2N3905 T0-92 2N3906 2N4402 2N2369 SOT-23 pn4122 2N708 2N4403 MMBT3906 MMBT4403 TN2219A
2n3904 TO-92

Abstract: No abstract text available
Text: (Note 2) Process No. 19 h^hOhOO TN2219A 150 500 300 Obi 2N3903 TO-92 (92) 60


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PDF O-226 TN2219A 2N3903 MPS6515 00fiA 2n3904 TO-92
2002 - PNP 3-224

Abstract: NPN Transistor PN100A 2N3906 Darlington transistor PNP 2N3904 2n3904 TRANSISTOR PNP 2N3906 NPN Transistor TRANSISTOR 3182 PNP switching transistor 2N3906 transistor 338 switching transistor
Text: . 3-29 TN2219A NPN GPA


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PDF PN100 PN100A MMBT100 MMBT100A PN200 PN200A MMBT200 MMBT200A FPN330 FPN330A PNP 3-224 NPN Transistor PN100A 2N3906 Darlington transistor PNP 2N3904 2n3904 TRANSISTOR PNP 2N3906 NPN Transistor TRANSISTOR 3182 PNP switching transistor 2N3906 transistor 338 switching transistor
2n6722

Abstract: No abstract text available
Text: Power Transistors TO-237 Case TYPE NO. iC PD BVCBO BVCEO *b v c e s (A) NPN 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722 2N6723 2N6724 2N6725 2N6731 2N6733 2N6734 2N6735 2N6737* CENW01 CENW01A CENW05 CENW06 CENW07 CENW10 CENW13 CENW14 CENW42 TN2102 TN2219A TN2905A TN3019 TN3020 TN3053 TN3724* TN3725" CENW51 CENW51A CENW55 CENW56 CENW57 CENW60 CENW63 CENW64 CENW92 2N6732 PNP 2N6726 2N6727 2N6728 2N6729 2N6730 MAX 2.0 2.0 2.0 2.0 2.0 0.5 1.0 1.0 1.0 1.0 1.5 1.5 1.0 0.5 0.5 0.5 1.5 1.0


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PDF O-237 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722
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