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0TLN110.X Littelfuse Inc FUSE FST/A TELE-GARD 110A 170VDC

TLN110 datasheet (6)

Part Manufacturer Description Type PDF
TLN110 Toshiba Optical Semiconductor Devices Original PDF
TLN110 Toshiba Japanese - Optical Semiconductor Devices Original PDF
TLN110 Others The Optical Devices Data Book (Japanese) Scan PDF
TLN110 Others Infrared Lamp Scan PDF
TLN110 Toshiba Infrared Lamp Scan PDF
TLN110F Toshiba Infrared LED, GaAs Infrared Emitter Original PDF

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Not Available

Abstract: No abstract text available
Text: TOSHIBA TOSHIBA INFRARED LED TLN110 Ti m 'm n GaAs INFRARED EMITTER 11 n m m INFRARED LED FOR REMOTE CONTROL SYSTEM Unit in mm REMOTE CONTROL SYSTEM SMOKE SENSOR OPTO-ELECTRONIC SWITCH · High radiant intensity ; Ig - 30mW / sr (TYP.) · Excellent linearity of radiant intensity and , Handbook. 1997 09-08 - 1/5 TOSHIBA TLN110 PRECAUTION Please be careful of the followings , ) iD \o i 0 1 o TLN110 00 OJ TOSHIBA TLN110 WAVELENGTH CHARACTERISTIC


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PDF TLN110 TPS703
2007 - Not Available

Abstract: No abstract text available
Text: TLN110 (F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN110 (F) Lead Free Product , TLN110 (F) Precautions Please be careful of the followings. 1. Soldering temperature : 260°C max , ) 2 2004-02-06 TLN110 (F) IF ­ Ta 120 1000 IFP ­ VFP (typ.) 100 500 300 , 2004-02-06 TLN110 (F) Wavelength Characteristic 1.0 IF = 50mA Ta = 25°C 0.8 (typ.) 10 Relative , 2004-02-06 TLN110 (F) Distance Characteristics (long distance) 1000 100 IEP = 200mW / sr at IFP


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PDF TLN110 TPS703
2007 - Not Available

Abstract: No abstract text available
Text: .1 Switching time test circuit Input pulse Input TLN110 (F) VCC TPS611(F) Output R RL Output pulse 0 tr tf 10 , °C Light source = TLN110 (F) Directional Sensitivity Characteristics (typ.) (dB) 30° 40° 50° 60° 70° 80 , (typ.) Ta = 25°C Input TLN110 (F) VCC 10V R 200 tr (RL=10k) 100 50 30 tf (RL=10k) Output RL 50 Output pulse Input pulse td tr tf 30 Coupling Characteristics With TLN110 (F) Switching time (µs) (mA) 10 90% 10% Collector current IC TLN110 (F) IE = 50mW / sr 5 3 10 Ta = 25°C TPS611(F) Using


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PDF TPS611
2007 - TOSHIBA PHOTOTRANSISTOR SILICON NPN

Abstract: No abstract text available
Text: Input TLN110 (F) R VCC TPS610(F) Output RL Output pulse 0 tr tf 10% Input pulse 0 90% PC ­ Ta 160 10 , °C) 12 8 4 0 -4 -8 -12 Frequency Characteristics (typ.) VCC = 5 V Ta = 25°C Light source = TLN110 (F , (typ.) 30 Ta=25°C Input TLN110 (F) VCC 10V Output RL tr tf Output pulse Input pulse td 90% 10% Coupling Characteristics With TLN110 (F) TLN110 (F) IE = 50mW/sr (mA) Collector current IC Switching , 150A at VCE = 3V E = 0.1mW/cm2 0.5 0.3 TLN110 (F) d 30 tf (RL=10k) tr (RL=1k) 10 td (RL=10k) 3


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PDF TPS610 TOSHIBA PHOTOTRANSISTOR SILICON NPN
TLN110

Abstract: TPS703 46C4
Text: TLN110 (F) GaAs LED TLN110 (F) : mm · : IE=30mW / sr() · · PIN , 1 2007-10-01 TLN110 (F) · 260°C5s() · · LED 1 : 1 I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN110 (F) IF ­ Ta IFP ­ VFP () 1000 100 , ) 2007-10-01 TLN110 (F) () 1.0 IE ­ Ta () 10 IF = 50mA Ta = 25°C 5 0.8 , 100 300500 1m 3 5 10m PW (s) 4 2007-10-01 TLN110 (F) () 100


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PDF TLN110 TPS703 100Hz 100mA 10kHz 500Hz 200Hz 46C4
TLN110

Abstract: c4060 TPS610
Text: 260°C5s 1 2007-10-01 TPS610(F) 1. VCC TLN110 (F) 0 TPS610(F) R , ) 2007-10-01 TPS610(F) () () 12 VCC = 5V Ta = 25°C 8 Ta = 25°C = TLN110 (F , ) TLN110 (F) () 100 30 Ta = 25°C RL td tr 10 tf 200 50 30 3 tf , ) TLN110 (F) TLN110 (F) IE = 50mW / sr VCC 10V 10 Ta = 25°C 1 TPS610(F) :IL = 150A at VCE = 3V E = 0.1mW / cm2 0.5 3V IC 0.3 TLN110 (F) 0.3 1 IC 3 10


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PDF TPS610 TLN110 c4060
2007 - Not Available

Abstract: No abstract text available
Text: TLN110 (F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN110 (F) Lead(Pb)-Free Remote-control , 20 940 45 ±8 Max 1.5 10 Unit V A mW / sr mW pF nm nm ° 1 2 1 2007-10-01 TLN110 (F , fluctuation in optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN110 (F , Forward current IF (mA) Forward current IF (mA) 3 2007-10-01 TLN110 (F) Wavelength , 300 1m 3m 10m Pulse width PW (s) 4 2007-10-01 TLN110 (F) Distance


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PDF TLN110 TPS703
"Smoke Sensor"

Abstract: TLN110 TPS703
Text: TOSHIBA TLN110 TOSHIBA INFRARED LED GaAs INFRARED EMITTER TLN110 INFRARED LED FOR REMOTE , TLN110 PRECAUTION Please be careful of the followings. 1. Soldering temperature : 260°C MAX , without notice. 1997-09-08 2/5 TOSHIBA TLN110 IF - Ta ifp - VFP (TYP.) 20 40 60 80 100 120 AMBIENT , °C 3 10 30 100 300 FORWARD CURRENT IF (mA) 1000 1997-09-08 3/5 TOSHIBA TLN110 880 WAVELENGTH , (NEAR DISTANCE) = 100 - 10 -1 —10.1 (mm) 1997-09-08 4/5 TOSHIBA TLN110 1000c DISTANCE


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PDF TLN110 TPS703 100Hz 200Hz 1000c 200mW/sr 300mA, 100//S "Smoke Sensor" TLN110
TLN110

Abstract: TPS703
Text: TOSHIBA TLN110 TOSHIBA INFRARED LED GaAs INFRARED EMITTER TLN110 INFRARED LED FOR , mA — 45 — nm Half Value Angle 0* Ip = 50 mA — ±8 — o 1 2002-03-20 TOSHIBA TLN110 , TLN110 IF - Ta ifp - VFP 0 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (°C) 140 IF - vf (typ.) Ta , °C 3 10 30 100 300 FORWARD CURRENT IF (mA) 1000 3 2002-03-20 TOSHIBA TLN110 WAVELENGTH , (mm) 4 2002-03-20 TOSHIBA TLN110 5 2002-03-20 TOSHIBA TLN110 RESTRICTIONS ON PRODUCT USE â


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PDF TLN110 30mW/sr TPS703 TLN110
2004 - TLN110

Abstract: TPS611
Text: TLN110 (F) 0 TPS611(F) 90% Output R RL Output pulse 10% 0 tr PC ­ Ta (typ , 5V Ta = 25°C Light source = TLN110 (F) 1 3 Frequency Relative sensitivity Output , 10V Input TLN110 (F) (µs) 1000 50 Ta = 25°C tf 200 Collector current Switching time 300 Coupling Characteristics With TLN110 (F) Switching Characteristics (typ.) tr (RL=10k) 100 50 50 100 30 10 5 tf (RL=10k) 30 tr (RL=1k) TLN110 (F) IE = 50mW


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PDF TPS611 TLN110
2007 - Not Available

Abstract: No abstract text available
Text: .1 Switching time test circuit Input TLN110 (F) R VCC TPS610(F) Output RL Output pulse 0 tr tf 10% Input pulse , = 25°C Light source = TLN110 (F) 20° 30° 40° 50° 60° 70° 80° 90° 1.0 0.8 0.6 0.4 10° 0 , Characteristics (typ.) 30 Ta=25°C Input TLN110 (F) VCC 10V Output RL tr tf Output pulse 90% 10% Coupling Characteristics With TLN110 (F) (µs) R td (mA) Input pulse TLN110 (F) IE = 50mW/sr 10 Collector , =100,1k) tf (RL=100) tr (RL=100) 1 0.1 0.3 0.02 5 tf (RL=1k) 0.5 0.3 TLN110 (F) d IC 3V TPS610


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PDF TPS610
2009 - TLN110

Abstract: TPS703
Text: TLN110 (F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN110 (F) Remote-control Systems , ° Half value angle 1 2007-10-01 TLN110 (F) Precautions Please be careful of the , optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 TLN110 (F) IF ­ Ta , Forward current IF (mA) 3 2007-10-01 TLN110 (F) Wavelength Characteristic 1.0 (typ , 1m 3m 10m (s) 4 2007-10-01 TLN110 (F) Distance Characteristics (long distance


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PDF TLN110 TPS703
2004 - TLN110

Abstract: TPS610
Text: 2004-02-09 TPS610(F) Fig.1 Switching time test circuit VCC Input TLN110 (F) Input pulse 0 , Radiation Angle (dB) Light source = TLN110 (F) 30° 30° 40° 40° 50° 50° 60° 60 , Switching Characteristics (typ.) 300 1000 f (kHz) Coupling Characteristics With TLN110 (F) 30 VCC Output pulse 10V TLN110 (F) 10% td Output RL tr 200 tf Collector current IC Switching time (µs) R TLN110 (F) IE = 50mW/sr 90% Input pulse (mA) Ta


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PDF TPS610 TLN110
TLN110

Abstract: TLN205 TPS611
Text: €¢ High sensitivity :Il = 120^A(TYP.) • Half value angle : 0* = ± 8° (TYP.) • The TLN110 in the , °C LIGHT SOURCE = TLN110 (GaAs LED , CHARACTERISTICS _(TYP.) Ta = 25°C INPUT TLN110 (i (GaAs LED) OUTPUT PULSE _ Vrr = INPUT y (D PULSE - f-o , '5- 0.030.05 0.1 0.3 0.5 1 3 5 10 COLLECTOR CURRENT Iq (mA) COUPLING CHARACTERISTICS WITH TLN110 , -i_> \—I- TLN110 Lì TPS611 5 10 30 50 100 DISTANCE d (mm) 200 1997-09-08 4/5


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PDF TPS611 TLN110 TLN205 TLN110 TPS611 IL-99
2007 - Not Available

Abstract: No abstract text available
Text: .1 Switching time test circuit Input TLN110 (F) R VCC TPS610(F) Output RL Output pulse 0 tr tf 10% Input pulse , V Ta = 25°C Light source = TLN110 (F) 30° 40° 50° 60° 70° 80° 90° 1.0 0.8 0.6 0.4 0.2 0 30° 40 , Frequency f (kHz) Switching Characteristics (typ.) 30 Ta=25°C Input TLN110 (F) VCC 10V Output RL tr tf Output pulse Input pulse td 90% 10% Coupling Characteristics With TLN110 (F) TLN110 (F) IE = , =10k) 5 3 10 Ta = 25°C TPS610(F) Using sample 1 :IL = 150A at VCE = 3V E = 0.1mW/cm2 0.5 0.3 TLN110 (F) d


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PDF TPS610
2007 - Toshiba phototransistor

Abstract: No abstract text available
Text: circuit Input pulse Input TLN110 (F) VCC TPS611(F) Output R RL Output pulse 0 tr tf 10% 90% 0 PC ­ Ta , 2007-10-01 TPS611(F) Frequency Characteristics (typ.) 12 VCC = 5V Ta = 25°C Light source = TLN110 (F , sensitivity Frequency f (kHz) Switching Characteristics (typ.) Ta = 25°C Input TLN110 (F) VCC 10V R , Characteristics With TLN110 (F) Switching time (µs) (mA) 10 90% 10% Collector current IC TLN110 (F , =100) 1 0.03 0.05 0.1 0.3 0.5 5 TLN110 (F) 1 3 5 10 0.1 1 3 TPS611(F) 10 30 50 100 200 Collector


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PDF TPS611 Toshiba phototransistor
2009 - SP900

Abstract: TLN110 TPS611 TOSHIBA PHOTOTRANSISTOR SILICON NPN
Text: 2007-10-01 TPS611(F) Fig.1 Switching time test circuit Input pulse Input VCC TLN110 (F) 0 , 25°C Light source = TLN110 (F) 8 -20 1 3 Frequency f Relative sensitivity 1000 , Input TLN110 (F) 30 Collector current IC Ta = 25°C Switching time (µs) 300 Coupling Characteristics With TLN110 (F) Switching Characteristics (typ.) tf 200 tr (RL=10k) 100 50 50 100 30 10 5 tf (RL=10k) 30 tr (RL=1k) 10 TLN110 (F) IE = 50mW / sr 5 30 3 10


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PDF TPS611 SP900 TLN110 TOSHIBA PHOTOTRANSISTOR SILICON NPN
2004 - TLN110

Abstract: TPS703
Text: TLN110 (F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN110 (F) Lead Free Product Unit: mm , 1 2 IF = 50mA ±8 ° Half value angle 1 2004-02-06 TLN110 (F , TLN110 (F) IF ­ Ta IFP ­ VFP (typ.) 1000 100 500 300 (mA) 80 100 IFP 60 , 10 30 Forward current IF 3 100 300 1000 (mA) 2004-02-06 TLN110 (F , TLN110 (F) Distance Characteristics (long distance) 100 1000 IEP = 200mW / sr at IFP ~300mA


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PDF TLN110 TPS703
2007 - Not Available

Abstract: No abstract text available
Text: .1 Switching time test circuit Input pulse Input TLN110 (F) VCC TPS611(F) Output R RL Output pulse 0 tr tf 10 , = 5V Ta = 25°C Light source = TLN110 (F) Directional Sensitivity Characteristics (typ.) (dB) 30 , ) Switching Characteristics (typ.) Ta = 25°C Input TLN110 (F) VCC 10V R 200 tr (RL=10k) 100 50 30 tf (RL=10k) Output RL 50 Output pulse Input pulse td tr tf 30 Coupling Characteristics With TLN110 (F) (µs) (mA) 10 90% 10% Switching time Collector current IC TLN110 (F) IE = 50mW / sr 5 3 Ta


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PDF TPS611
TLN110

Abstract: TLN205 TPS610 TPS611
Text: High sensitivity : II = 250/^A (TYP.) Half value angle : 0*= ±8° (TYP.) The TLN110 in the same size , CHARACTERISTICS _(TYP.) Ta = 25°C INPUT , OUTPUT PULSE . _ VCC INPUT ■ft'ZX 10V PULSE -\ TLN110 (GaAs LEdT , (TYP.) v CC = 5V a = 25°C IGHT SOURCE = TLN110 jaAs LED) T , FREQUENCY f (kHz) 300 1000 COUPLING CHARACTERISTICS WITH TLN110 0.5 0.3 0.1


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PDF TPS610 TLN110 TLN205 TLN110 TPS610 150//A TPS611 TPS611
Not Available

Abstract: No abstract text available
Text: TOSHIBA TLN110 TOSHIBA INFRARED LED GaAs INFRARED EMITTER T L N 1 10 Unit in mm INFRARED LED FOR REMOTE CONTROL SYSTEM REMOTE CONTROL SYSTEM SMOKE SENSOR OPTO-ELECTRONIC SWITCH â , lia b ility H a n d b o o k . 1997 - 09-08 1/5 TOSHIBA TLN110 PRECAUTION Please be , re in is su b je c t t o c han ge w ith o u t notice. 1997 - 09-08 2/5 TOSHIBA TLN110 TOSHIBA TLN110 WAVELENGTH CHARACTERISTIC î* RELATIVE Ie - Ta (TYP.) a EH 53 z g


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PDF TLN110 TPS703
JAPAN P832

Abstract: TLP1214A TLP910 p832 TLP1230 tps604 toshiba TLN108 78/JAPAN P832 TPS608A tps607
Text: 8 TPS853 11 TLN110 (F) 8 TPS601A(F) 10 TPS856 11 TLN115A(F) 8 TPS610 , (F) TLN119(F) TLN238(F) TLN105B(F) TLN110 (F) TLN115A(F) TLN231(F) TLN233(F , ±8 TLN105B(F) 5 ­ 12 ­ 50 ­ ­ ­ 950 ±23.5 TLN110 (F) 5 ­ , . 7.65±0.2 10.4 TLN115A(F)/ TLN231(F) 8.65±0.2 12.15 +0.4 TLN110 (F) ­0.1 11.5 +0.4 ­0.1 +0.4 , (F) TLN108(F) TPS601A(F) TLN119(F), TLN238(F) TPS615(F), TPS616(F) TLN110 (F), TLN231(F


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PDF BCJ0028F BCJ0028E JAPAN P832 TLP1214A TLP910 p832 TLP1230 tps604 toshiba TLN108 78/JAPAN P832 TPS608A tps607
led 5050

Abstract: TLN100 p832 TLN1050 photo sensor TLN1000 TLN231 TLN115A TLN110 tps852t
Text: ) TLN1108 7 TPS851(E 10 7 TLOH9204 7 TPS852(T)/TPS852(K) 10 TLN110 (F) 7 , LED TLN1050 / TLN1108 TLN1050/ TLN1108 LED TLN1050: 3.6 mm .5.2 Lx 5.2 Wx 4.0 Hmm TLN1108 : PLCC-4 .3.5 Lx 2.9 Wx 1.9 Hmm : 40100° : 40110° C C , -40110 °C (mW/sr) (V) (nm) (°) TLN1050 50 2.3 870 40 TLN1108 , ) TLN110 (F) TLN115A(F) TLN231(F) TLN233(F) TPS610(F) TPS611(F) TLN117(F) IC TPS601A(F


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PDF BCJ0028G BCJ0028F led 5050 TLN100 p832 TLN1050 photo sensor TLN1000 TLN231 TLN115A TLN110 tps852t
Not Available

Abstract: No abstract text available
Text: NPN Photo Transistor TPS611 A pplications • Photo Sensor • Photoelectric Counter • Various Kinds of Readers • Position Detection • Remote Controls Features • 05mm Epoxy Resin Package • High Sensitivity: lL= 120pA (Typ.) • Half Value Angle: 012= ± 8° (Typ.) / • Spectrally and Mechanically Compatible with the TLN110 and TLN205 Emitters MAXIMUM RATINGS (Ta = 25 , INPUT PULSE 0 TLN110 (GaAs LED) « OUTPUT — 90% OUTPUT PULSE 10% 0 T P S 611


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PDF TPS611 120pA TLN110 TLN205 98-4LEDS
Not Available

Abstract: No abstract text available
Text: NPN Photo Transistor TPS610 A pplications • PhotoSensor • Photoelectric Counter • Various Kinds of Readers * Position Detection • Remote Controls Features • 05mm Epoxy Resin Package » High Sensitivity: lL= 250|iA (Typ.) • Half Value Angle: QVi = ± 8° (Typ.) • Spectrally and Mechanically Compatible with the TLN110 and TLN205 Emitters M A XIM U M RATINGS (Ta = 25 , Photo Transisto r TP S 610 Sw itching T im e T est C ircu it INPUT Vcc * TLN110 (GaAs LED


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PDF TPS610 TLN110 TLN205 98-4LED
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