The Datasheet Archive

Top Results (6)

Part ECAD Model Manufacturer Description Datasheet Download Buy Part
UJ3C065080T3S UJ3C065080T3S ECAD Model UnitedSiC Power Field-Effect Transistor
UF3C065080B7S UF3C065080B7S ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-7L
UF3C120150K4S UF3C120150K4S ECAD Model UnitedSiC 1200V-150mΩ SiC FET TO-247-4L
UF3SC120040B7S UF3SC120040B7S ECAD Model UnitedSiC 1200V-35mΩ SiC FET D2PAK-7L
UJ3C065080B3 UJ3C065080B3 ECAD Model UnitedSiC 650V-80mΩ SiC FET D2PAK-3L
UJ4C075023B7S UJ4C075023B7S ECAD Model UnitedSiC 750V-23mΩ SiC FET D2PAK-7L

TL 188 TRANSISTOR PIN DIAGRAM Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
TL 188 TRANSISTOR PIN DIAGRAM

Abstract: PEAK DETECTOR System on a chip TRANSISTOR CODE SA5
Text: chip. Power supply pin for the analog portion of the chip. Device digital ground pin . T TL output pin , YST Figure 2. Block Diagram 1998 Oct 07 188 , second stage, ami a matched rise/fall time T TL output buffer. The system is user-configurable to provide , below threshold. Additionally, the low signal condition forces the overall T TL output to a logical Low , standard 20- pin surface-mount package and typically consum es 42m A from a standard 5 V supply. The SA 5 2


OCR Scan
PDF SA5214 SA5214 SA5210, SA5211 SA5212 TL 188 TRANSISTOR PIN DIAGRAM PEAK DETECTOR System on a chip TRANSISTOR CODE SA5
2006 - SPB2026Z

Abstract: SPB-2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
Text: single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic , Thermal Resistance Package Power up/down control < 1s Robust Class 1C ESD Functional Block Diagram SZ , (junction - lead) Vcc = 5V ICQ = 445mA Typ. A °C/W TL = 25°C ZS = ZL = 50 Ohms The information , Temp. (TJ) Operating Temp. Range ( TL ) Max. Storage Temp. Absolute Limit 1500 mA 7V 6W 28 dBm 23 dBm , < (TJ - TL ) / RTH, j-l *Note: No RF Drive TL=TLEAD RFIN 2 RFOUT/ VCC Reliability &


Original
PDF SPB-2026Z 10mil EDS-105436 SPB-2026Z SPB2026Z TL 188 TRANSISTOR PIN DIAGRAM SPB-2026
1999 - TL 188 TRANSISTOR PIN DIAGRAM

Abstract: 470PF BA6438S AGC-24
Text: , V20P is the voltage applied to pin 20, and (TL­CSofs ) is the offset between the TL and CS pins. VM , reduce wow and flutter, and an output transistor saturation prevention circuit that provides superb , the detection of motor direction. 4) Output transistor (high-and low-sides) saturation prevention , detection. 7) Available in SDIP 24- pin power package (with radiation fins). !Absolute maximum ratings , voltage VM 3 12 23 V BA6438S Motor driver ICs !Block diagram SIGNAL VCC CONTROL


Original
PDF BA6438S BA6438S TL 188 TRANSISTOR PIN DIAGRAM 470PF AGC-24
1999 - TL 188 TRANSISTOR PIN DIAGRAM

Abstract: 470PF BA6438S
Text: , V20P is the voltage applied to pin 20, and (TL­CSofs ) is the offset between the TL and CS pins. VM , reduce wow and flutter, and an output transistor saturation prevention circuit that provides superb , the detection of motor direction. 4) Output transistor (high-and low-sides) saturation prevention , detection. 7) Available in SDIP 24- pin power package (with radiation fins). !Absolute maximum ratings , voltage VM 3 12 23 V BA6438S Motor driver ICs !Block diagram SIGNAL VCC CONTROL


Original
PDF BA6438S BA6438S 13pin) 51Min. SDIP-M24 TL 188 TRANSISTOR PIN DIAGRAM 470PF
2000 - TRANSISTOR MARKING A33

Abstract: 69A5 SGA-3363
Text: Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high , : VS = 5 V RBIAS = 68 Ohms °C/W ID = 35 mA Typ. TL = 25ºC 2.3 2.6 2.9 255 OIP3 , Return Loss dB 21.3 19.7 18.8 20.4 18.8 15.1 ORL Output Return Loss dB , Max. Junction Temp. (TJ) TL =+25ºC 0.5 1 1.5 2 Frequency (GHz) 2.5 +150°C , +85°C Max. Storage Temp. 1 +150°C Operating Temp. Range ( TL ) 2 Bias Conditions should


Original
PDF SGA-3363 SGA-3363 EDS-100634 TRANSISTOR MARKING A33 69A5
2000 - transistor tl 187

Abstract: transistor A62 transistor marking a62 high frequency transistor marking a62
Text: Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT , Return Loss Noise Figure Device Voltage Thermal Resistance VS = 8 V RBIAS = 51 Ohms ID = 75 mA Typ. TL = , dB dB dB dB 14.0 37.0 18.7 18.8 35.7 18.4 4.0 13.9 36.0 19.0 17.4 36.3 18.6 3.9 13.6 35.0 18.7 15.8 23.8 18.8 3.9 12.4 33.0 17.8 14.6 13.9 18.8 4.2 11.2 31.4 16.8 15.5 13.4 18.5 4.4 , 6V +16 dBm +150°C -40°C to +85°C +150°C TL =+25ºC Operating Temp. Range ( TL ) Max. Storage


Original
PDF SGA-6286 EDS-100613 transistor tl 187 transistor A62 transistor marking a62 high frequency transistor marking a62
2000 - transistor A62

Abstract: transistor marking a62 amplifier A62 marking Top Marking A62 SGA-6286 high frequency transistor GHz marking a62 high frequency transistor marking a62 85C80
Text: Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high , RBIAS = 51 Ohms °C/W ID = 75 mA Typ. TL = 25ºC 3.6 4.0 4.4 97 OIP3 Tone Spacing = 1 , 16.8 15.2 IRL Input Return Loss dB 18.8 17.4 15.8 14.6 15.5 20.6 ORL , dB 18.4 18.6 18.8 18.8 18.5 17.0 NF Noise Figure dB 4.0 3.9 3.9 , . RF Input Pow er 4.0 +16 dBm Max. Junction Temp. (TJ) TL =+25ºC 2.0 1.0 +150°C


Original
PDF SGA-6286 SGA-6286 DC-5500 EDS-100613 transistor A62 transistor marking a62 amplifier A62 marking Top Marking A62 high frequency transistor GHz marking a62 high frequency transistor marking a62 85C80
2006 - SPB2026Z

Abstract: SPB2026ZSR
Text: single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic , Si CMOS Si BJT GaN HEMT RF MEMS Functional Block Diagram SZ P-2026 SPB-2026 RFIN A c tiv e , Current VCC Leakage Current Test Conditions: VCC =5V, ICQ =445mA Typ., TL =25°C, ZS =ZL =50 RF MICRO , ) Operating Temp Range ( TL ) Storage Temp Power Dissipation (PDISS) ESD Rating - Human Body Model (HBM , Conditions should also satisfy the following expression: IDVD <(TJ - TL )/RTH, j-l and TL =TLEAD Simplified


Original
PDF SPB2026Z SPB2026Z SOF-26 SPB2026ZSQ SPB2026ZSR SPB2026ZPCK1
2006 - SPB2026Z

Abstract: SPB-2026Z SPB-2026 SPB-2026Z-EVB3 ML200D SOF-26 spb2026zevb3 0.7GHz to 2.2GHz InGaP AMPLIFIER 1805-1880MHz power amplifier EDS-105436
Text: 's SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier , c c = 5V Functional Block Diagram SiGe BiCMOS SZ P-2026 SPB-2026 Si BiCMOS SiGe HBT , =5V VPC =5V VCC =5V, VPC =0V Test Conditions: VCC =5V, ICQ =445mA Typ., TL =25°C, ZS =ZL =50 RF , Junction Temp (TJ) Operating Temp Range ( TL ) Storage Temp Power Dissipation (PDISS) ESD Rating - Human , following expression: IDVD <(TJ - TL )/RTH, j-l and TL =TLEAD Simplified Device Schematic GND VBIAS


Original
PDF SPB-2026Z SOF-26 SPB-2026Z SPB2026Z SPB-2026Z-EVB1 1805-1880MHz SPB-2026Z-EVB2 1930-1990MHz SPB-2026 SPB-2026Z-EVB3 ML200D SOF-26 spb2026zevb3 0.7GHz to 2.2GHz InGaP AMPLIFIER 1805-1880MHz power amplifier EDS-105436
2006 - SPB-2026Z

Abstract: SPB-2026ZSR ER39 spb2026z s-parameters
Text: Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic encapsulated package , pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Functional Block Diagram SZ P-2026 SPB-2026 RFOUT RFIN , ., TL =25°C, ZS =ZL =50 RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless , ) Junction Temp (TJ) Operating Temp Range ( TL ) Storage Temp Power Dissipation (PDISS) ESD Rating - Human Body , table on page one. Bias Conditions should also satisfy the following expression: IDVD <(TJ - TL )/RTH, j-l


Original
PDF SPB2026Z SPB2026Z SOF-26 SPB2026ZSQ SPB2026ZSR SPB2026ZPCK1 SPB-2026Z SPB-2026ZSR ER39 s-parameters
2006 - Not Available

Abstract: No abstract text available
Text: linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a , and WEEE compliant.  p  InGaP HBT Functional Block Diagram DE SI SZ P , lead VCC =5V VPC =5V VCC =5V, VPC =0V Test Conditions: VCC =5V, ICQ =445mA Typ., TL =25°C, ZS , ) Operating Temp Range ( TL ) Storage Temp Power Dissipation (PDISS) The information in this publication is , expression: IDVD <(TJ - TL )/RTH, j-l and TL =TLEAD NE W Simplified Device Schematic NO T FO R


Original
PDF SPB2026Z SOF-26 SPB2026Z SPB2026ZSQ SPB2026ZSR 1805MHz
photo transistor til 78

Abstract: Transistor AC 187 transistor tl 187 TL 187 TRANSISTOR NPN TIL188-4 AC 187 npn transistor TO 1 E65085 Til 160 Phototransistor Til 78 TIL187-4
Text: ' 55 v Min • UL Recognized - File #E65085 • IMo Base Lead Connection on TIL 188 for High-EMI Environment description The TIL187 and TIL 188 Optocouplers are designed for use in AC applications that , installed. B Pin 1 identified Dy inde* dot. C Terminal connections. 1 Input ) 2 Input J 3 No internal , 7 V On-state 'C{onJ collector current Photo- transistor operation TIL 187-1. TIL188-1 Vce - 1 v. IF , Transistor static hpE forward currenl transfer ratio VCE " 1 v- 'C ' 10 mA- iF = o 25000 + Input diode


OCR Scan
PDF TIL188-4 SOOSQ12A D29BO. E65085 TIL187 photo transistor til 78 Transistor AC 187 transistor tl 187 TL 187 TRANSISTOR NPN AC 187 npn transistor TO 1 E65085 Til 160 Phototransistor Til 78 TIL187-4
Not Available

Abstract: No abstract text available
Text: NPN POWER TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . HIGH VOLTAGE CAPABILITY . NPN TRANSISTOR , monitors. 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sym bol V CBO V CEO , * V ce = 5 V lc = 6 A = -3 A 11 3.9 280 \is ts tl ts tl V ce = 400 V I b i = 1-5 A Ib 2 , = 1200 sin 5 \ / IF = 5 A lc = 6 A Ibi = 1.5 A ns ts tl IN D U C T IV E LO AD S to ra g e T im e , 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 TYP. MAX. 5.65 3.8 3.1


OCR Scan
PDF BUH615D ISOWATT218 BUH615D ISOWATT218
2005 - HLB121D

Abstract: TO126ML hlb121
Text: . : 1/4 MICROELECTRONICS CORP. HLB121D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121D is a medium power transistor designed for use in switching applications. TO , for pb-free packing 3 Pin Style: 1.Emitter 2.Collector 3.Base F H Material: · Lead , 1.28 3.50 2.61 13 1.18 2.88 0.68 3.44 1.88 0.50 Max. 8.24 11.37 1.12 1.52 3.75 3.37 , : Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS


Original
PDF HD200205 HLB121D HLB121D O-126ML 183oC 217oC 260oC TO126ML hlb121
2005 - HLB122D

Abstract: TP 1322 Transistor C G 774 6-1 transistor k 2837
Text: . : 1/4 MICROELECTRONICS CORP. HLB122D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122D is a medium power transistor designed for use in switching applications. Features , packing 3 Pin Style: 1.Emitter 2.Collector 3.Base F H Material: · Lead solder plating: Sn60 , 13 1.18 2.88 0.68 3.44 1.88 0.50 Max. 8.24 11.37 1.12 1.52 3.75 3.37 1.42 3.12 0.84 , Critical Zone TL to TP TP Ramp-up TL tL Temperature Tsmax Tsmin tS Preheat Ramp-down


Original
PDF HD200206 HLB122D HLB122D O-126ML 183oC 217oC 260oC TP 1322 Transistor C G 774 6-1 transistor k 2837
2005 - OC 140 germanium transistor

Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor
Text: . : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For , a germanium transistor . · Small saturation voltage can bring less power dissipation and flashing , 2 Control Code Note: Green label is used for pb-free packing 3 Pin Style: 1.Emitter 2 , J N Min. 7.74 10.87 0.88 1.28 3.50 2.61 13 1.18 2.88 0.68 3.44 1.88 0.50 Max , surface-mount devices Figure 1: Temperature profile tP Critical Zone TL to TP TP Ramp-up TL tL


Original
PDF HD200203 HSD879D O-126ML 183oC 217oC 260oC OC 140 germanium transistor germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor
2000 - NGA-589

Abstract: marking n5 amplifier 6.0 GHZ marking n5 amplifier
Text: Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process , 19.0 18.8 OIP3 Output Third Order Intercept Point dBm dBm 850 M Hz 1950 M Hz 39.0 , : VS = 8 V RBIAS = 39 Ohms °C/W ID = 80 mA Typ. TL = 25ºC 4.5 4.9 5.3 111 OIP3 , P1dB Output Pow er at 1dB Compression dBm 18.3 19.0 19.0 18.8 17.6 15.4 IRL , VS = 8 V Test Conditions: RBIAS = 39 Ohms ID = 80 mA Typ. TL = 25ºC OIP3 Tone Spacing = 1


Original
PDF NGA-589 NGA-589 EDS-100376 marking n5 amplifier 6.0 GHZ marking n5 amplifier
2008 - C3310

Abstract: FX 501 smd smd transistor 501 FX-401 FX-501 G218B SMD MARKING CODE 501
Text: ://www.vectron.com Vectron International·267 LowellRoad, Hudson, New Hampshire 03051·Tel:+ 1-88 -VECTRON-1 Vectron , ·Tel:+ 1-88 -VECTRON-1 Vectron International GmbH & Co. KG · Landstraße, 74924 Neckarbischofsheim, Germany · Tel: +49 , ) Output : Single ended HCMOS Height "H" Pin Length "L" 5.9 NA Dimensions : mm Pin , or observance 6 Vs Power Supply Pin Marking FX-501 Frequency AYYWW Parameter , , Hudson, New Hampshire 03051·Tel:+ 1-88 -VECTRON-1 Vectron International GmbH & Co. KG · Landstraße, 74924


Original
PDF FX-501 C3310 FX-401 1-88-VECTRON-1 FX-501 C3310 FX 501 smd smd transistor 501 FX-401 G218B SMD MARKING CODE 501
2006 - Not Available

Abstract: No abstract text available
Text: Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT , RoHS and WEEE compliant. V c c = 5V Functional Block Diagram SZ P-2026 SPB-2026 RoHS Compliant , Resistance (junction - lead) Vcc = 5V TL = 25°C 445 485 2.1 10 °C/W ICQ = 445mA Typ , . Junction Temp. (TJ) 23 dBm Operating Temp. Range ( TL ) -40°C to +85°C Max. Storage Temp , : IDVD < (TJ - TL ) / RTH, j-l *Note: No RF Drive 5 TL=TLEAD Reliability & Qualification


Original
PDF SPB-2026Z SPB-2026Z 10mil EDS-105436
2006 - SPB-2026Z

Abstract: SPB-2026 2W High Linearity Amplifier spb2026z
Text: class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a surface-mountable plastic , Thermal Resistance Package Power up/down control < 1s Robust Class 1C ESD Functional Block Diagram SZ , 5V, Vpc = 0V) Thermal Resistance (junction - lead) Vcc = 5V ICQ = 445mA Typ. A °C/W TL = 25 , long term operation) Max. Junction Temp. (TJ) Operating Temp. Range ( TL ) Max. Storage Temp. Absolute , satisfy the following expression: IDVD < (TJ - TL ) / RTH, j-l *Note: No RF Drive TL=TLEAD RFIN 2


Original
PDF SPB-2026Z 10mil EDS-105436 SPB-2026Z SPB-2026 2W High Linearity Amplifier spb2026z
2011 - C3310

Abstract: No abstract text available
Text: ://www.vectron.com Vectron International·267 LowellRoad, Hudson, New Hampshire 03051·Tel:+ 1-88 -VECTRON-1 Vectron , ·267 LowellRoad, Hudson, New Hampshire 03051·Tel:+ 1-88 -VECTRON-1 Vectron International GmbH & Co. KG · Landstraße , Input : Single ended (HCMOS or Sinewave) Output : Single ended HCMOS Height "H" 5.9 Pin Length "L" NA Dimensions : mm Pin Connections 1 2 3 4 5 6 Ref. Frequency in VCXO Control GND RF-OUT Lock , observance Power Supply Pin Marking FX-501 Frequency AYYWW Absolute Maximum Ratings Min Typ Max


Original
PDF FX-501 C3310 10opside FX-501 1-88-VECTRON-1
2007 - SPB-2026

Abstract: zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB-2026Z SPB2026 0722 ER39 SOF-26 ML200D
Text: -2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed , WEEE compliant. V c c = 5V Functional Block Diagram SZ P-2026 SPB-2026 RoHS Compliant & Green , lead) Vcc = 5V TL = 25°C 445 500 2.1 100 °C/W ICQ = 445mA Typ. 6.2 12 ZS = , Temp. (TJ) 23 dBm Operating Temp. Range ( TL ) -40°C to +85°C Max. Storage Temp. +150°C , < (TJ - TL ) / RTH, j-l *Note: No RF Drive 5 TL=TLEAD Reliability & Qualification Information


Original
PDF SPB-2026Z SPB-2026Z SOF-26 EDS-105436 SPB-2026 zo 107 TL 188 TRANSISTOR PIN DIAGRAM SPB2026Z SPB2026 0722 ER39 ML200D
TL 188 TRANSISTOR PIN DIAGRAM

Abstract: transistor BU 189 3639
Text: DIAGRAM In SG3638 I 0 0 SG3639 I 0 0 0 Enable O/l I 0 O/l I 1 t 6 Sink Source O ff O ff On On On O ff O ff O ff On On On O ff On O ff CONNECTION D IG R A M (Top View ) Pin 1 2 ORDER , E ) 40V 50V 40V 50V Package 12 12 12 12 pin pin pin pin SIP SIP SIP SIP 187 ADVANCED DATA , g o ^ g ^TH sense 2 to 5 0 % Vsjnk t Ds on t DS o ff 188 ADVANCED DATA SG3638/SG3638A SG3639/SG3639A FUNCTIONAL DESCRIPTION SG3638 (non-chop drive) The state of the INPUT pin directly


OCR Scan
PDF SG3638/SG3638A SG3639/SG3639A SG3638and SG3639are SG3638 SG3639 3639/SG3639A TL 188 TRANSISTOR PIN DIAGRAM transistor BU 189 3639
Not Available

Abstract: No abstract text available
Text: 1504 ls/b tp = 1s nonrep. fr 1.88 _ 150c U Ibi = Ib2 150° tl Ibi — Ib2 , > 4302271 High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor 004D725 747 « H A , JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor features , . .-65 to + 200 Tl At distances £ 1/32 in. (0.8 mm , 0.6 1.5 _ A — 1 MHz 0 -5 2 4 hF E VB (sat) E VcE(sat) 1.88 0.8


OCR Scan
PDF 004D725 O-204AA RCA-BUX11A T0-204AA BUX11A
2006 - Not Available

Abstract: No abstract text available
Text: SGA9189Z Medium Power Discrete SiGe Transistor SGA9189Z Medium Power Discrete SiGe Transistor Package: SOT-89 Product Description RFMD's SGA9189Z is a high performance transistor designed for , on a silicon germanium heterostructure bipolar transistor (SiGe HBT) process. The SGA9189Z is , Operating Current 155 180 195 Test Conditions: VCE = 5V, ICQ = 180mA (unless otherwise noted), TL = 25°C. [1 , (TJ) Operating Temp Range ( TL ) Max Storage Temp Rating 5 200 7 20 4.8 +150 See Graph +150 Unit


Original
PDF SGA9189Z SGA9189Z OT-89 39dBm, SGA9189ZSQ SGA9189ZSR SGA9189Z-EVB1
Supplyframe Tracking Pixel