The Datasheet Archive

TC55VBM416 datasheet (2)

Part ECAD Model Manufacturer Description Type PDF
TC55VBM416AFTN TC55VBM416AFTN ECAD Model Toshiba SRAM - Low Power Original PDF
TC55VBM416AFTN55 TC55VBM416AFTN55 ECAD Model Toshiba Original PDF

TC55VBM416 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
RC39F

Abstract: b20 p03 MB91F469GB SW1S JP41 MAX3232CSE T 512Kx32x4 r40a RC41E Y20 100N
Text: MCU_Y2 10k VDD35 GND VCC3V3 VCC2V5 X13A CSX0 CSX1 CSX6 RDX TC55VBM416 CE1 CE2 , TC55VBM416 SRAM 16MBit (1Mx16) MBM29DL640E GND A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13


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PDF P00/D24-31 P01/D16-23 P02/D8-15 4MBx16 VDD35 16MBit 1Mx16) SK-91469G-256BGA RC39F b20 p03 MB91F469GB SW1S JP41 MAX3232CSE T 512Kx32x4 r40a RC41E Y20 100N
Pin100

Abstract: SK-96380 6110R
Text: TC55VBM416 SRAM 16MBit (1Mx16) GND GND A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13


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PDF Pin10 Pin11 Pin12 Pin13 Pin14 Pin15 Pin16 Pin17 Pin18 Pin19 Pin100 SK-96380 6110R
AMIS30663

Abstract: 8j1a al p06
Text: VCC5V VCC3V3 VCC2V5 10k TC55VBM416 CE1 CE2 OE R/W VCC5V VCC3V3 CSX3 CSX4 RDX


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PDF SK-96380-120PMT SK-96380-120PMT VPin69 MB96F387-LQFP AMIS30663 8j1a al p06
AMIS30663

Abstract: SK9633 sub-d 9 pin
Text: A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 n/c VDD U14 TC55VBM416 4


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PDF Pin10 Pin11 Pin12 Pin13 Pin14 Pin15 Pin16 Pin17 Pin18 Pin19 AMIS30663 SK9633 sub-d 9 pin
TC55VBM416

Abstract: No abstract text available
Text: TC55VBM416 SRAM 16MBit (1Mx16) GND GND A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13


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PDF Pin10 Pin11 Pin12 Pin13 Pin14 Pin15 Pin16 Pin17 Pin18 Pin19 TC55VBM416
PIER00

Abstract: MB96348 ACE FLASH MB96348R MB86276 SK-96380 TC55VBM416 seq555 MCU-AN-300208-E
Text: can be seen from above diagram, CSX3 is used for MBM29DL640E and CSX4 is used for TC55VBM416. Some , TC55VBM416 is configured for 16-bit data bus with the help of jumper JP50 and JP53. BYTEX pin selects byte


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PDF MCU-AN-300208-E-V14 MC-16FX 16-BIT PIER00 MB96348 ACE FLASH MB96348R MB86276 SK-96380 TC55VBM416 seq555 MCU-AN-300208-E
lcd color monitor p15-1

Abstract: JP100 C107 C108 MAX3232CSE 16c72 TDA00
Text: Pin48 Pin49 Pin50 Pin43 VCC5V VCC3V3 VCC2V5 TC55VBM416 GND 15 12 47 14 VCC5V


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PDF Pin10 Pin11 Pin12 Pin13 Pin14 Pin15 Pin16 Pin17 Pin18 Pin19 lcd color monitor p15-1 JP100 C107 C108 MAX3232CSE 16c72 TDA00
RC39F

Abstract: SK9164 vg96 RC41C P2SC RC39D Open17 C920r tle6250gv33 RC41E
Text: -96 GND WRX0/WRX1 (SolderJP) Default 2-3 VDD35 R68 10k B VCC2V5 X13B TC55VBM416 26


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PDF CON36 VDD35 Pin143 Pin142 Pin141 Pin140 Pin139 Pin138 Pin137 Pin136 RC39F SK9164 vg96 RC41C P2SC RC39D Open17 C920r tle6250gv33 RC41E
MCU-AN-300208-E-V15

Abstract: MB86276 TC55VBM416 96380_ext_bus MB86276 fujitsu
Text: MBM29DL640E and CSX4 is used for TC55VBM416. Some external memories may also need the UBX and LBX signal , of jumper JP49 and JP52. Similarly RAM chip TC55VBM416 is configured for 16-bit data bus with the


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PDF MCU-AN-300208-E-V15 MC-16FX 16-BIT 0x000C00; MCU-AN-300208-E-V15 MB86276 TC55VBM416 96380_ext_bus MB86276 fujitsu
K4S5111632-U75

Abstract: TLE6250 MB91F46 R38A-B TLE6250GV33 lcd color monitor p15-1 PIN160 GS 220P RC39A r40b
Text: A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 A18 A19 n/c TC55VBM416 26 12 28 11


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PDF CON44 Pin175 Pin174 Pin173 Pin172 Pin171 Pin170 Pin169 Pin168 Pin167 K4S5111632-U75 TLE6250 MB91F46 R38A-B TLE6250GV33 lcd color monitor p15-1 PIN160 GS 220P RC39A r40b
MB91F465P

Abstract: 680r P0C62 PPG24 PIN76 r40a
Text: 27P0U21027 GND 46P0U21046 GND GND C GND R61 1k TC55VBM416 JP96 SRAM Enable Default


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PDF P0J1029 P0J1030 P0J1031 P0J1032 P0J1033 P0J1034 P0J1035 P0J1036 P0J1037 P0J1038 MB91F465P 680r P0C62 PPG24 PIN76 r40a
AMIS30663

Abstract: R40A TLE6250 P0JP6002 T679 P0C8802 P0U21020 P0D3302
Text: A21 27P0U21027 GND 46P0U21046 GND GND C GND R61 1k TC55VBM416 JP96 SRAM Enable


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PDF P0J1029 P0J1030 P0J1031 P0J1032 P0J1033 P0J1034 P0J1035 P0J1036 P0J1037 P0J1038 AMIS30663 R40A TLE6250 P0JP6002 T679 P0C8802 P0U21020 P0D3302
2003 - TSOP48-P-1220-0

Abstract: TC55VBM416AFTN TC55VBM416AFTN55
Text: TC55VBM416AFTN55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416AFTN is a 16,777,216 , guaranteed operating extreme temperature range of -40° to 85°C, the TC55VBM416AFTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM416AFTN is available in a plastic 48 , GND BYTE /A-1 2003-08-13 48 A16 1/14 TC55VBM416AFTN55 BLOCK DIAGRAM ROW ADDRESS


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PDF TC55VBM416AFTN55 576-WORD 16-BIT/2 152-WORD TC55VBM416AFTN 216-bit TSOP48-P-1220-0 TC55VBM416AFTN55
tsop-56 samsung

Abstract: TC58DVM72A1FTI0 tc58fvm5t2atg THNCF1G02DG TSOP1-48 THNCF1G02DGI THNCF128MMG toshiba Nand flash bga TC58NVG0S3AFTI5 SD-M512
Text: TC55VBM316AFTN TC55VBM316ASTN TC55VEM316AXGN TC55YEM316AXGN TC55VBM416AFTN TC55VEM416AXGN TC55YEM416AXGN


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PDF 576Mb 256Mb tsop-56 samsung TC58DVM72A1FTI0 tc58fvm5t2atg THNCF1G02DG TSOP1-48 THNCF1G02DGI THNCF128MMG toshiba Nand flash bga TC58NVG0S3AFTI5 SD-M512
2004 - Not Available

Abstract: No abstract text available
Text: TC55VBM416AFTN55 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416AFTN is a 16,777,216 , guaranteed operating extreme temperature range of −40° to 85°C, the TC55VBM416AFTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM416AFTN is available in a plastic 48 , 45 46 47 I/O16 GND BYTE /A-1 2003-12-25 48 A16 1/14 TC55VBM416AFTN55 BLOCK DIAGRAM


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PDF TC55VBM416AFTN55 576-WORD 16-BIT/2 152-WORD TC55VBM416AFTN 216-bit
TC55VBM416ATGN

Abstract: TSOP48-P-1220-0 TC55VBM416 TSOP48-P-1220
Text: TC55VBM416ATGN40 ,55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416ATGN is a , required. And, with a guaranteed operating extreme temperature range of -40° to 85°C, the TC55VBM416ATGN can be used in environments exhibiting extreme temperature conditions. The TC55VBM416ATGN is , (maximum): 3.6 V TC55VBM416ATGN 40 55 Access Time 40 ns 55 ns CE1 Access Time ·


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PDF TC55VBM416ATGN40 576-WORD 16-BIT/2 152-WORD TC55VBM416ATGN 216-bit TSOP48-P-1220-0 TC55VBM416 TSOP48-P-1220
RM17

Abstract: MJ179P mj-179p HWW-4PW-G S1S65010 CP45 TMS DASP M21A-50PD-SF upc2933t BRPG1201W
Text: 4 CP32 12 U8 SRAM TC55VBM416AFTN U7 DiskOnCHIP MD15 MD14 MD13 MD12 MD11 MD10


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PDF CHS-06B BR24L16RFVM-W 10K-4 CHS-08B pin13 pin14 SP3232ECY RM17 MJ179P mj-179p HWW-4PW-G S1S65010 CP45 TMS DASP M21A-50PD-SF upc2933t BRPG1201W
TH58NVG2S3

Abstract: TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits TC58FVM6T2AFT65 AFT 181 AFT85 AFT-70L
Text: TC55VBM416AFTN55 * TC55VCM416BTGN40 * TC55VCM416BSGN40 16 Mbits * TC55VCM416BTGN55 , * * * * * * * * TC55VBM416AFTN55 * * * * 16 Mbits * * * * TC55VCM416BTGN40 TC55VCM416BTGN55


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PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 TC59LM836DMB-30 TH58NVG2S3 TC554161AFT-70L 69-206 TC55VCM316BSGN55 TSOP 48 Package nand memory toshiba toshiba sram 2 mbits TC58FVM6T2AFT65 AFT 181 AFT85 AFT-70L
TH50VPF5783

Abstract: th50vpf TC554161AFT-70L th58nvg TC55VEM208ASTN55 TC58NVG0S3AFT00 tc58128aft TC55VD1636FFI-150 TC55V8512JI-12 TC554161AFT-70
Text: TC55W1600FT-55 TC55W1600FT-70 * TC55VBM416AFTN40 * TC55VBM416AFTN55 TC55W1600XB7 TC55W1600XB8


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PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M TH50VPF5783 th50vpf TC554161AFT-70L th58nvg TC55VEM208ASTN55 TC58NVG0S3AFT00 tc58128aft TC55VD1636FFI-150 TC55V8512JI-12 TC554161AFT-70
2002 - TC55VBM416AFTN55

Abstract: TC55VBM416AFTN
Text: TC55VBM416AFTN55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55VBM416AFTN is a , required. And, with a guaranteed operating extreme temperature range of -40° to 85°C, the TC55VBM416AFTN can be used in environments exhibiting extreme temperature conditions. The TC55VBM416AFTN is , -1 I/O13 I/O6 I/O14 I/O7 I/O15 I/O8 2002-08-29 48 A16 1/14 TC55VBM416AFTN55 BLOCK


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PDF TC55VBM416AFTN55 576-WORD 16-BIT/2 152-WORD TC55VBM416AFTN 216-bit TC55VBM416AFTN55
2005 - BC547 B11

Abstract: BC547 b20 FES311-181 LM317t circuit MP5 A14 LM317T PIN152 PIN176 power supply lm317t PIN163
Text: 12 LED green D4 Pin90 PM3 TC55VBM416AFTN55 SRAM_16MBit(1Mx16) (connected directly to


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PDF Pin20 Pin21 Pin22 Pin23 Pin24 Pin25 Pin26 Pin27 Pin28 Pin29 BC547 B11 BC547 b20 FES311-181 LM317t circuit MP5 A14 LM317T PIN152 PIN176 power supply lm317t PIN163
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