The Datasheet Archive

TC514101 datasheet (58)

Part Manufacturer Description Type PDF
TC514101AFT-10 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AFT-60 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AFT-70 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AFT-80 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AJ-10 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AJ-10 Toshiba 100 ns, 1-bit generation dynamic RAM Scan PDF
TC514101AJ-60 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AJ-60 Toshiba 4,194,304 WORD x 1 BIT DYNAMIC RAM Scan PDF
TC514101AJ-70 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AJ-70 Toshiba 70 ns, 1-bit generation dynamic RAM Scan PDF
TC514101AJ-80 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AJ-80 Toshiba 80 ns, 1-bit generation dynamic RAM Scan PDF
TC514101AP Toshiba 4,194,304 WORD x 1 BIT DYNAMIC RAM Scan PDF
TC514101AP-10 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AP-10 Toshiba 100 ns, 1-bit generation dynamic RAM Scan PDF
TC514101AP-60 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AP-60 Toshiba 4,194,304 WORD x 1 BIT DYNAMIC RAM Scan PDF
TC514101AP-70 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
TC514101AP-70 Toshiba 70 ns, 1-bit generation dynamic RAM Scan PDF
TC514101AP-80 Others Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

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LBIT 204

Abstract: TC514101AP
Text: Package TC514101AP TC514101AJ TC514101ASJ TC514101AZ BLOCK DIAGRAM DIP18-P-300E SOJ26-P-3ÖO SOJ26-P , SUBSTRATE I IAS GENERATOR A-185 TC514101AP /AJ/ASJ/AZ—70, TC514101 AP/AJ/ASJ/AZ-^80 TC514101AP /AJ/AS J , /AJ/ASJ/AZ—70, TC514101 AP/AJ/ASJ/AZ-^80 TC514101AP /AJ/AS J/AZ-10 DC ELECTRICAL CHARACTERISTICS , Voltage (Iqut« 4.2mA) - 0.4 V A-187 TC514101AP /AJ/ASJ/AZ—70, TC514101 AP/AJ/ASJ/AZ-^80 TC514101AP , €”70, TC514101 AP/AJ/ASJ/AZ-^80 TC514101AP /AJ/AS J/AZ-10 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC


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PDF TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/AZâ TC514101 TC514101AP/AJ/AS J/AZ-10 LBIT 204 TC514101AP
Z80 CRT

Abstract: 50n8 Z80 CRT controller Z80 application note dynamic ram
Text: : TC514101J Plastic ZIP: TC514101Z 26 25 24 23 22 18 17 16 15 14 IVSS Id o u t ids IN.C. >A9 1AS IA7 IA6 , Capacitance (RAS, CAS, WRITE) Output Capacitance (Dqut ) A-141 TC514101 J/Z-80 TC514101J /Z- 10 NOTES , A-142 TC514101 J/Z-80 TC514101J /Z-10 TIMING WAVEFORMS READ CYCLE `RAS VlH - ' VlL - , ^ | , | . ltDH OPEN V0H Dqut VOL ~ TC514101 J/Z-80 TC514101J /Z-10 NIBBLE MODE , NOTE: WRITE*"H" or "L" , A10-"H" or "L" A-147 TC514101 J/Z-80 TC514101J /Z-10 Cas before "E55


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PDF TC514101J/Z TC514101J/Z. TC514101J/Z-80 TC514101J/Z-10 Z80 CRT 50n8 Z80 CRT controller Z80 application note dynamic ram
TC514101J

Abstract: Z80 INTERFACING TECHNIQUES
Text: /16ms Package Plastic SOJ: TC514101J Plastic ZIP: TC514101Z JJ ■JO a fü is ¡öI m ï£ Sj 5 , (EAS=VIL, CAS, Address Cycling: tNC-tNC MIN.) TC514101 J/2-80 - 60 mA 3,4,5 TC514101J /2i-\ 0 - 50 , subject to change without notice. DESCRIPTION The TC514101J /Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101J /Z utilizes TOSHIBA'S CMOS Silicon gate process technology , system user. Multiplexed address inputs permit the TC514101J /Z to be packaged in a standard 26/20 pin


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PDF TC514101J/Z TC514101J/Z. TC514101 TC514101J Z80 INTERFACING TECHNIQUES
Not Available

Abstract: No abstract text available
Text: SOJ: TC514101J Plastic ZIP: TC514101Z •1 — 9 .JJ Ä . CAS VSS BLOCK DIAGRAM .S d i , / Z -1 0 DESCRIPTION The TC514101J /Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101J /Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as , . Multiplexed address inputs permit the TC514101J /Z to be packaged in a standard 26/20 pin plastic SOJ and 20 , cRAC tAA cCAC tRC cNC TC514101J /Z-80/-10 80ns 100ns RAS Access Time Column Address Access


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PDF TC514101J/Z MST-W-0030
Not Available

Abstract: No abstract text available
Text: output TTL compatible 1024 refresh cycles/16ms Package Plastic SOJ: TC514101J Plastic ZIP: TC514101Z , /Z-80 - 105 TC514101J /2-10 - 90 NIBBLE MODE CURRENT TC514101 J/Z-80 Average Power , Column Address Set-Up Time A-139 TC514101 J/Z— 80 TC514101J /Z-10 ELECTRICAL CHARACTERISTICS , TC514101J /Z-80 TC514101 J/Z— 10 APPLICATION INFORMATION ADDRESSING The 22 address bits required to , subject to change without notice. DESCRIPTION The TC514101J /Z is the new generation dynamic RAM


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PDF TC514101J/Z TC514101J/Z. TC514101
A101

Abstract: TC514101AP V313
Text: 1024 refresh cycles/16ms Package TC514101AP : DIP18-P-300E TC514101AJ : SOJ26-P-350 TC514101ASJ , to change without notice. DESCRIPTION The TC514101AP /AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP /AJ/ASJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process , the system "user. Multiplexed address inputs permit the TC514101AP /AJ/ASJ/AZ to be packaged in a , capability with high performance logic families such as Schottky TTL. The special feature of TC514101AP /AJ


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PDF TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/AZ-60 A101 TC514101AP V313
Not Available

Abstract: No abstract text available
Text: outputs TTL compatible 1024 refresh cycles/16ms Package TC514101AP DIP18-P-300E TC514101AJ SOJ26-P-350 TC514101ASJ SOJ26-P-300A TC514101AZ ZIP20-P-400A BLOCK DIAGRAM < PIN CONNECTION (TOP VIEW) Haiti« SOJ , ) - 0.4 V A-187 TC514101AP /AJ/ASJ/AZ- 70, TC514101 AP/AJ/ASJ/AZ-80 TC514101 AP/AJ/ASJ/AZ , 11 'os 12 A-188 TC514101AP /AJ/ASJ/AZ-70, TC514101 AP/AJ/ASJ/AZ-80 TC514101 AP/AJ/ASJ/AZ , , TC514101AP /AJ/ASJ/AZ-80 TC514101 AP/AJ/ASJ/AZ-10 A-193 TC514101AP /AJ/ASJ/AZ- 70, TC514101AP /AJ/ASJ


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PDF TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/A2-70, TC514101AP/AJ/ASJ/AZ-80 TC514101AP/AJ/ASJ/AZ-10
Not Available

Abstract: No abstract text available
Text: -300E TC514101A J : SO J26-P-350 TC514101A SJ : SO J26-P-300A TC514101AZ : ZIP20-P-400A BLOCK DIAGRAM TC514101AP /AJ/ASJ/AZ-70, TC514101AP /AJ/ASJ/AZ-80 TC514101 AP/AJ/ASJ/AZ-10 ABSOLUTE M A X IM U M RATINGS , TC514101AP /AJ/ASJ TC514101 AP/AJ/ASJ /AZ-80 /AZ-10 /AZ-70 UNIT MIN. MIN. MAX. MAX. MIN , Time 0 - 0 - 0 - ns A-188 12 TC514101AP /AJ/ASJ/AZ— TC514101 AP/AJ/ASJ , -70, TC514101 AP/AJ/ASJ/AZ-80 TC514101AP /AJ/ASJ/AZ-10 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATION


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PDF C514101A TC514101A 300/350mil) TC514101AP/A TC514101AP/AJ/ASJ/AZâ TC514101AP/AJ/ASJ/AZ-80 TC514101
A100COLUMN

Abstract: No abstract text available
Text: /16ms Package TC514101AP : DIP18-P-300E TC514101AJ : SOJ26-P-350 TC514101ASJ : SOJ26-P-300A TC514101AZ , specifica tions are subject to change without notice. DESCRIPTION The TC514101AP /AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP /AJ/ASJ/AZ utilizes TOSHIBA'S CMOS , , both internally and to the system user. Multiplexed address inputs perm it the TC514101AP /AJ/ASJ/AZ to , special feature of TC514101AP /AJ/ASJ/AZ is nibble mode, allowing the user to serially access 4 bits of


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PDF TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/AZ-60 A100COLUMN
az60

Abstract: No abstract text available
Text: utput TTL compatible 1024 refresh cycles/16ms Package TC514101AP : DIP18-P-300E TC514101AJ : SOJ26-P-350 TC514101ASJ : SOJ26-P-300A TC514101AZ : ZIP20-P-400A No C o n n ectio n DOUT RAS , specifica­ tions are subject to change w ithout notice. D ESC R IPT IO N The TC514101AP /AJ/ASJ/AZ is the new generation dynam ic RAM organized 4,194,304 words by 1 bit. The TC514101AP /AJ/ASJ/AZ utilizes , TC514101AP /AJ/ASJ/AZ to be packaged in a stan d ard 18 pin plastic DIP, 26/20 pin plastic S0j(300/350m il


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PDF TC514101AP/AJ/ASJ/AZ 300/350m TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/AZ-60 az60
toshiba 7 pin a215

Abstract: No abstract text available
Text: /16ms Package Plastic SOJ: TC514101J Plastic ZIP: TC514101Z Single power supply of 5V±10% with a t , TOSHIBA MOS MEMORY PRODUCTS TC51401J/Z-80, TC514101J /Z-1Ü DESCRIPTION The TC514 LOIJ/Z is the new generation dynamic RAM organized A, 194,304 words by 1 bit. The TC514101J /Z utilizes TO S H I B A , operating margins, both internally and to the system user. Multiplexed address inputs permit the TC514101J /Z , CAS Access Time Cycle Time Nibble Mode Cvcle Time TC514101J /Z-80/-10 100ns 80ns 40ns 20ns 150ns 40ns


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PDF TC51401J/Z-80, TC514101J/Z-1Ü TC514 TC514101J/Z TC514101J/Z-10 TC51401 J/Z-80. TC514101 toshiba 7 pin a215
KMM5362000

Abstract: DYNAMIC RAM CROSS REFERENCE TC514400 KMM53220 MC-422000A36 KMM591000 TC514100 THMS361020 KMM532200 HB56A48
Text: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 Mod« F. Page Nibble S. Column Samsung KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 Toshiba TC514100 TC514101 TC514102 TC514400 TC514402 Hitachi HM514100 HM514101 HM514102 HM514400 HMS14402 Fu|ttsu MB814100 MB814101 MB814102 MB814400 MB814402 NEC MPD424100 MPD424101 MPD424102 MPD424400 MP0424402 Okl MSM514100 MSM514101 MSM514102 MSM514400 MSM514402 X4 F. Page S. Column 3.2 Dynamic RAM Module Organization 1M X 8


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PDF KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 TC514100 TC514101 TC514102 TC514400 TC514402 KMM5362000 DYNAMIC RAM CROSS REFERENCE KMM53220 MC-422000A36 KMM591000 THMS361020 KMM532200 HB56A48
circular 945

Abstract: TC51 TC514101J
Text: cycles/16ms Package Plastic SOJ: TC514101J Plastic ZIP: TC514101Z 1A9 I a8 I A7 1 a6 15 J a5 ] A4 , : tNC=tNC MIN.) TC514101J /2-80 - 60 mA 3,4 TC514101 J/2-10 - 50 ICC5 STANDBY CURRENT Power Supply , TOSHIBA Electronic Components Business Sector 4,194,304 WORD X 1 BIT DYNAMIC RAM TC514101J /Z-80 TC514101J /Z-10 DESCRIPTION The TC514101J /Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101J /Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well as advanced


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PDF TC514101J/Z-80 TC514101J/Z-10 TC514101J/Z MST-W-0030 circular 945 TC51 TC514101J
toshiba 32k*8 sram

Abstract: M5M23C100 M5M5265 seeq DQ2816A HITACHI 64k DRAM MB832001 M5M23C400 TC511000 KM41C464 TC51464
Text: C511002 TC514256 TC514258 TC514100 TC514101 TC514102 TC514400 TC514402 HM511000 HM511001 HM511002 HM514256


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PDF KM4164 KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 toshiba 32k*8 sram M5M23C100 M5M5265 seeq DQ2816A HITACHI 64k DRAM MB832001 M5M23C400 TC511000 TC51464
al 232 nec

Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 NM9307 HN28C256 TC5116100 oki cross reference
Text: MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 CROSS REFERENCE GUIDE Mode F.Page Nibble S. Column Samsung KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 KM48C512 KM49C512 KM416C256 KM418C256 KM41C16000 KM44C4000 KM48C2000 KM416C1000 Toshiba TC51256 TC51257 TC51258 TC51464 TC51466 TC511000 TC511001 TC511002 TC514256 TC514258 TC514100 TC514101 TC514102 TC514400 TC514402 TC514800A


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PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 NM9307 HN28C256 TC5116100 oki cross reference
41C1000

Abstract: fujitsu 814100 TC 55464 toshiba 816b 658128 hn623257 HN62304 M7202A 41c464 hn62324
Text: TC514101 TC 514102 TC 514400 TC 514402 H M 51 256 M B 81256 M B 81257 r MP D 4 1 2 5 6 M SM


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PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba 816b 658128 hn623257 HN62304 M7202A hn62324
TC55B8128

Abstract: KM23C4000AG TC534000AF hitachi cross TC551632 HN62308BP m5m23c100 TC55B4256 CAT28C16A 68512U
Text: TC514101 TC 5 14102 TC 514400 TC 514402 TC 5 14 8 0 0A T C 5 14 9 0 0A T C 514170B T C 514280B T C 5 116100


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PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF hitachi cross TC551632 HN62308BP m5m23c100 TC55B4256 CAT28C16A 68512U
41C1000

Abstract: 41C464 424170 NEC TC55B8128 CY70199 44C1000 TC5116100 HN62404P KM41C1000 TC511000
Text: MEM ORY ICs 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 CRO SS REFERENCE GUIDE M ode F. Page N ibble S. C o lu m n Sa m su n g KM 41C256 KM 41C257 KM 41C258 KM 41C464 KM 41C466 KM 41C1000 K M 41C 10 01 KM 41C1002 KM 44C256 KM 44C258 KM 41C4000 K M 41C 40 01 KM 41C4002 KM 44C1000 KM 44C1002 KM 48C512 KM 49C512 KM 416C256 KM 418C256 KM 41C16000 KM 44C4000 Toshiba TC 51256 TC 51257 TC 51258 TC51464 TC 51466 TC511000 TC511001 TC511002 T C 514256 TC 514258 T C 51 4100 TC514101


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PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 424170 NEC TC55B8128 CY70199 44C1000 TC5116100 HN62404P KM41C1000 TC511000
ASJ-10

Abstract: ATR10 ATR80
Text: TC514101AP /AJ/ASJ-10 TOSHIBA 0—70 100 180 25 20 70 180 20 210 4. 5—5. 5 75 2/1 0.8 2.4 7 0. 4/4. 2 2. 4/5 IK/16 TC514101AP /AJ/ASJ-60 TOSHIBA 0-70 60 110 20 15 40 110 15 135 4. 5—5. 5 120 2/1 0.8 2.4 7 0. 4/4. 2 2. 4/5 IK/128 TC514101AP /AJ/ASJ-70 TOSHIBA 0—70 70 130 20 15 50 130 15 155 4. 5—5. 5 100 2/1 0.8 2.4 7 0. 4/4. 2 2. 4/5 IK/16 TC514101AP /AJ/ASJ-80 TOSHIBA 0-70 80 150 20 15 60 150 15 175 4.5—5.5 85 2/1 0.8 2.4 7 0. 4/4. 2 2.4/5 IK/16 TC514101AZ /AFT/ATR-10 TOSHIBA 0-70 100 180 25


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PDF IK/16 TC514100AP/AJ/ASJ-80 TC514100MVAJL/ASJL-10 TC514102J/Z-10 IK/16 TC514102J/Z-80 TMS44100-10 ASJ-10 ATR10 ATR80
c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: No file text available


Original
PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
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