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3N60A4D

Abstract: TA49369 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 5LEC A9688
Text: anti-parallel is the development type TA49369. This IGBT is ideal for many high voltage switching applications , TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 = VDD =


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PDF HGT1S3N60A4DS HGTP3N60A4D TA49327. TA49369. 3N60A4D TA49369 HGT1S3N60A4DS9A 5LEC A9688
2001 - 3n60a4d

Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3N60A4
Text: development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is , DIODE TA49369 VGE 90% 10% E0N2 EOFF L = 1mH ICE RG = 50 ICE 90% DUT VCE + -


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PDF HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3N60A4
2001 - 3N60A4

Abstract: No abstract text available
Text: development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is , Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% E0N2 EOFF L = 1mH ICE


Original
PDF HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3N60A4
2001 - 3N60A4D

Abstract: 3n60a4 HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D N-Channel mosfet 400v 25A
Text: development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is , , JUNCTION TO CASE Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% E0N2 EOFF


Original
PDF HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3N60A4D 3n60a4 HGT1S3N60A4DS9A N-Channel mosfet 400v 25A
2000 - 3n60a4d

Abstract: HGT1S3N60A4DS HGT1S3N60A4DS9A HGTP3N60A4D 3n60
Text: development type TA49327. The diode used in anti-parallel is the development type TA49369. This IGBT is , THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90


Original
PDF HGT1S3N60A4DS, HGTP3N60A4D HGT1S3N60A4DS HGTP3N60A4D 150oC. TA49327. TA49369. 3n60a4d HGT1S3N60A4DS9A 3n60
2003 - 3N60A4

Abstract: HGTP3N60A4 HGTD3N60A4S HGTP3N60A4D LD26 TB334 45A-150
Text: Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% EON2 EOFF L = 1mH ICE RG = 50 ICE 90


Original
PDF HGTD3N60A4S, HGTP3N60A4 HGTD3N60A4S HGTP3N60A4 150oC. 100kHz 200kHz 3N60A4 HGTP3N60A4D LD26 TB334 45A-150
2001 - 3N60A4

Abstract: HGTD3N60A4S HGTP3N60A4 HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334 transistor equivalent 3N60A4
Text: HGTP3N60A4D DIODE TA49369 VGE 90% 10% EON2 EOFF L = 1mH ICE RG = 50 ICE 90% DUT VCE


Original
PDF HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3N60A4 HGTD3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334 transistor equivalent 3N60A4
2001 - 3n60a4

Abstract: 3N60 HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 HGTP3N60A4D TB334
Text: TA49369 VGE 90% 10% EON2 EOFF L = 1mH ICE RG = 50 ICE 90% DUT VCE + - 10


Original
PDF HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3n60a4 3N60 HGTD3N60A4S HGT1S3N60A4S9A HGTP3N60A4D TB334
1999 - 3N60A4

Abstract: HGTD3N60A4S HGT1S3N60A4S HGT1S3N60A4S9A HGTP3N60A4 TB334
Text: Test Circuit and Waveforms HGTP3N60A4D DIODE TA49369 VGE 90% 10% EON2 EOFF L = 1mH ICE


Original
PDF HGTD3N60A4S, HGT1S3N60A4S, HGTP3N60A4 HGT1S3N60A4S HGTP3N60A4 150oC. 100kHz 3N60A4 HGTD3N60A4S HGT1S3N60A4S9A TB334
2000 - 65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d emerson three phase dc motor driver service note transistor 76121D
Text: No file text available


Original
PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d emerson three phase dc motor driver service note transistor 76121D
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