|
TTC5886A
|
|
Toshiba Electronic Devices & Storage Corporation
|
NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
|
|
|
TTA2097
|
|
Toshiba Electronic Devices & Storage Corporation
|
PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
|
|
|
GRT31CC71E226ME13L
|
|
Murata Manufacturing Co Ltd
|
1206 (3216M) X7S (EIA) 25Vdc 22μF±20% |
|
|
|
GRT31CC71C226ME13L
|
|
Murata Manufacturing Co Ltd
|
1206 (3216M) X7S (EIA) 16Vdc 22μF±20% |
|
|
|
GRT31CC71C226ME13K
|
|
Murata Manufacturing Co Ltd
|
1206 (3216M) X7S (EIA) 16Vdc 22μF±20% |
|
|
|
GRT31CC71E226ME13K
|
|
Murata Manufacturing Co Ltd
|
1206 (3216M) X7S (EIA) 25Vdc 22μF±20% |
|
|
