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t2721

Abstract: BFX88 transistor BFX88 BFX87 IEC134 silicon planar epitaxial transistors
Text: Absolute Maximum System (IEC134) SbE T> m 7110öSb GOMSSST All T-27-21 IPHIN Collector-base voltage , 1990 This Material Copyrighted By Its Respective Manufacturer Silicon planar epitaxial transistors T-27-21 , Manufacturer BFX87 BFX88 PHILIPS INTERNATIONAL test circuits SbE D T-27-21 7110ÖSb ÜDMSSbl 47T BIPHIN , Respective Manufacturer Silicon planar epitaxial transistors PHILIPS INTERNATIONAL T-27-21 m iL BFX87 , SbE D T-27-21 711002b QGM22b3 5>42 ■7Z22S» IPHIN Fig.6 Typical variation of collector cut-off


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PDF BFX87 BFX88 0D4225Ã BFX87 T-27-21 DCm2270 t2721 BFX88 transistor BFX88 IEC134 silicon planar epitaxial transistors
T2721

Abstract: BFX87 BFX88 1N916 199Q silicon planar epitaxial transistors 2721
Text: ¶Sb DQ45SSC1 811 T-27-21 IPHIN Collector-base voltage (open emitter) Collector-emitter voltage (open base , . Silicon planar epitaxial transistors T-27-21 BFX87 BFX88 IPS INTERNATIONAL SbE ]> ■711D02b 00452bD S33 , Copyrighted By Philips Semiconductors. BFX87 BFX88 PHILIPS INTERNATIONAL TEST CIRCUITS SbE D T-27-21 TllOßSb , transistors philips international Ptot (mW) 600 400 200 o T-27-21 H A BFX87 BFX88 SbE D 711002b 0G4E2b2 3□ t , PHILIPS INTERNATIONAL -ICBO SbE D T-27-21 TllDaSb D0425b3 242 ■7222SM IPHIN -50 0 50 100 150 Fig


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PDF BFX87 BFX88 GM225Ã T2721 BFX88 1N916 199Q silicon planar epitaxial transistors 2721
Ja101

Abstract: JA100 JC500 JC501 T2721
Text: accordance with the Absolute Maximum System {IEC 134) SbE ]> 7HD65b 0042447 «ibi BIPHIN T-27-21 , SbE D fT Ccb Ceb NF T-27-21 JA100 JA101 711DâSb 00M24MÛ BTfl I IPHIN typ. < typ. < 130 6.0


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PDF JA100 JA101 7110fl2b 004244b JC500 JC501 MBB01S Ja101 T2721
T2721

Abstract: BFX29 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1
Text: Manufacturer Silicon planar epitaxial transistor T-27-21 ±L BFX29 ■^[^SwNTERNÄTIONAL ShE D ■711005b , collector-emitter voltages. 7Z22S23 (- August 1990 335 BFX29 PHILIPS INTERNATIONAL SbE D ~~ T-27-21 Tll0à , ) (V) 1-5 1'0 ~5bE » ■711002b 0042215 STT «PHIN T-27-21 7222911 , INTERNATIONAL Ctc (PF) 15 10 5'0 5bE D T-27-21 711002b G042217 3b2 HPHIN , transistor T-27-21 BFX29 'HILIPS INTERNATIONAL hie (kil) h r« (xl<54) 10 1-0 0-1 0-1 SbE D â


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PDF BFX29 T2721 CTC 880 transistor d0422 bfx29 transistor IEC134 Silicon Epitaxial Planar Transistor philips 5BE1
2SD1665

Abstract: 2FK transistor T2721 2SB1130AM 2SD1665AM 2FK 638 transistor
Text: 100 £L 80 <2 40 cc LU S o a. 20 25 50 75 100 125 150 AMBIENT TEMPERATURE: Ta ('0) Fig-1 ^ftiMfl*! T-27-21 , ! !c (A) Fig. 7 3b? 2 •xvyii HiSinlE—3 2 ■t'S^tt t-27-21 0.01 0.01 0.02 0.05 0,1 0.2 0,5 1 2 5


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PDF 2SD1665Ã 2SB1130AM 2SB1130AM. 2SD1665AM -T-27-Zl ti31i t-27-21 2SD1665 2FK transistor T2721 2FK 638 transistor
2SD1225M

Abstract: 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
Text: K /Transistors ROHM CO LTD 2SD1225M 2SD1858 • «ft 2) Vce (sat )= 150mV (at 500mA) 3) 2SB909M/2SB12371 3 > 7 >J 0 • Features 1) Large power in a compact ATR package: PC-1W 2) Low saturation voltage: VCE(sa.)=150mV (Typ.) (at 500mA) 3) Complementary pair with 2SB909M, 2SB1237. 2SD1225M/2SD1858 4GE D ■DG0SÖ3S fl HRHH 1$ * y T 7V- -f M N PN vU □ > h 7 >V * $ "fS^Jililffl/Medium Power Amp. T-27-21 , -1 —2 -5 -10 -20 -50 EMITTER CURRENT i IE (mA) Fig.7 5 >y -100 T-27-21 Ta=25 (=1MH


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PDF 2SD1225M 2SD1858 150mV 500mA) 2SB909M/2SB12371 2SB909M, 2SB1237. 2SD1225M/2SD1858 2SD1225M Q TRANSISTORS sec 537 2SD1858 2SB909M 2sd1225 T2721 2SB1237 DU 9
2sb1238pqr

Abstract: LC07A T2721 2SB910M 2SD1226M 2SD1859 r272 2SB1238 tcam EE-19 N
Text: ®Ã›lJfëfÉftÎI/'Electrical Characteristic Curves T-27-21 2 z o w Q DC , Respective Manufacturer ROHM CO LTD /Transistors 4GE J> m 7fl20cHci QDOSSGÖ 4 BRHF1 2SB910M/2SB1238 T-27-21


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PDF 2SB910M/2SB1238 2SB910M 2SB1238 2SD1226M/2SD18591 2SD1226M, 2SD1859. 7fl20cHci T-27-21 Ti-25 2sb1238pqr LC07A T2721 2SB910M 2SD1226M 2SD1859 r272 2SB1238 tcam EE-19 N
D1226M

Abstract: D1226 T2721 2SD1226M 2SB1238 2SD1859 2SB910M 251C L0oa 80-V1
Text: ) Fig.1 t-27-21 ; i J a=2SC / / CE- =bV , ¶'icn 0Û05Ô40 1 irhm 2SD1226M/2SD1859 T-27-21 Ta=25C f=1MHz If=OA COLLECTOR TO BASE VOLTAGE: VcB IVI Flg


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PDF 2SD1226M/2SD1859 D1226M 700mA 2SB910M/2SB12381 2SD1226M 2SD1859 700mA 2SB910M, 2SB1238. D1226 T2721 2SD1226M 2SB1238 2SD1859 2SB910M 251C L0oa 80-V1
V272

Abstract: T2721 transistor Z 0102 UM 2721 2SB1130A 2SD1665AM 2SD1665 2SB1130AM 100C 2SB1130
Text: BRHM 2SB1130AM T-27-21 100 2SB1130AM T-27-21 10 - 5 -2 - I -0.5 -0.2 -0.1 -0.05 -0.02 -0.01 -0.01-0.02 -0.05 -


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PDF 2SB1130AM 2S31130ASVÃ -160V 2SD1665 -160V 2SD1665AM. V272 T2721 transistor Z 0102 UM 2721 2SB1130A 2SD1665AM 2SB1130AM 100C 2SB1130
T2721

Abstract: 2SD1226 uo208
Text: ROHM CO LTD 4QE ì > - - -7ÖSÄW QOQSSQb Q S R H M h 7 > v 7 £ /Transistors 2SB910M/2SB1238 T=27-21 2SEE 2SB 1233 1) pc = 1 W i : * è t ' o 2 )® U OE , V céo = - 80V, lc = -0.7A PNP yU=i> h 7 > v ^ ^ /Medium Power Amp. Epitaxial Planar PNP Silicon Transistors · W f Î ^ ï È 0 / D imensiôns (Unit : mm) 3) 2SD1226M/2SD1859 1 = 1> 7 y * · Features 1) High power: P c , /Transistors Characteristic Curves 2SB910M/2SB1238 T-27-21 · ^ / ' E l e c t r i c a l / / 1 I


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PDF 2SB910M/2SB1238 2SD1226M/2SD1859 2SD1226M 2SD1859. T2721 2SD1226 uo208
n4403

Abstract: 2N4402 2N4403 2N4402 philips
Text: 15 mA -lc = 500 mA; -I b = 50 mA SbE » ■711002b 0D42b71 TM2 «PHIN T-27-21 2N4403 Absolute


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PDF 2N4402 2N4403 7111302b D042b70 N4402 N4403 711002b D042b75 n4403 2N4402 2N4403 2N4402 philips
MPS6519

Abstract: MPS6517 MPS6518 MPS6513 MPS6515
Text: Maximum System (IEC 134) SbE D 711055b 00M25D1 7Mfi HIPHIN T-27-21 MPS6517 6518 6519


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PDF MPS6517 MPS6518 MPS6519 MPS6513 MPS6515. U9B01S NECC-C-002 10iiA MPS6519 MPS6515
MPS6513

Abstract: LG IC 621 5bti MPS6519 MPS6517 MPS6515 MPS6514 MPS65 6515 transistor T2721
Text: 134) 711Dôab □aM54cicl 5bT I T-27-21 ÎPHIN THERMAL RESISTANCE From junction to ambient in free


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PDF MPS6513 MPS6514 MPS65Ã 711002t T-27-Z/ MPS6517 MPS6519. NECC-C-002 LG IC 621 5bti MPS6519 MPS6515 MPS65 6515 transistor T2721
bc461

Abstract: c460
Text: 3GE D Rth j-case Rth j-amb m 7=^537 O O SC m H 5 T^27-21 M ax M ax 17.5 175 °C/W °C


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PDF BC460 BC461 BC461 BC440 BC441. c460
MPS6534

Abstract: MPS6531 MPS6532 MPS6535
Text: 134) 711DflEb 00M2SCH T3^ HIPHIN T-27-21 Collector-emitter voltage (open base) Collector-base


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PDF MPS6534 MPS6535 MPS6531 MPS6532. 100mA MPS6534 MPS6532 MPS6535
ic tms 1000

Abstract: 2SB1130M 2SB1236 2SD1665M 2SD1857 CLZ80
Text: &m 000SSS5 2 MRHfl 2SB1130M/2SB1236 • fiSiflUfStettH/Electrical Characteristic Curves T-27-21 100 a. CL z


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PDF -120V 2SD1665M/2SD1857i: 2SD1665M, 2SD1857. Q00S554 2SB1130M/2SB1236 2SB1130M 2SB1236 ic tms 1000 2SD1665M 2SD1857 CLZ80
MPS6531

Abstract: 455gb MPS6532 MPS6534 MPS6535
Text: 134) 711005b 0045507 Ibb T-27-21 IPHIN CHARACTERISTICS Tj = 25 °C unless otherwise specified


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PDF MPS6531 MPS6532 455Gb T-27-Z/ MPS6534 MPS6535. 100mA; MPS6531 100mA MPS6532 MPS6535
T2721

Abstract: MPS3702 BR v 610 MPS3703
Text: } 711005b Q0MBM67 SMfl ■T-27-21 IPHIN" Collector-emitter voltage (open base) Collector-base voltage


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PDF MPS3702 MPS3703 7110flSb D45Mflb MPS3702 T2721 BR v 610 MPS3703
Not Available

Abstract: No abstract text available
Text: ”23b32û 0 01 7 3 3 b SIEMENS/ SPCLn b H SIP S X T A 92 S X T A 93 SEMICONDS T-27-21 E le c


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PDF 23b320 QQ1733S SXTA93 0Q1733Ã SXTA92
T272i

Abstract: 2SC 5802 R2713 2SD1961 c 5802 transistor T103 2SD2098 2SD2097 2SD1962M mrrr
Text: /2SD2098 T-27-21 .1000


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PDF 2SD1S81 2SD2C97/2SD2093 2SD1961 /2SD1962M/2SD2097/2SD2098 r-27-13 O-92L/ty/r-i-- T-27-13 O-92L T272i 2SC 5802 R2713 c 5802 transistor T103 2SD2098 2SD2097 2SD1962M mrrr
iskaa

Abstract: chip die npn transistor
Text: OPERATION DATA 3-259 4bE D b3b?25M O G ^ S b 5 «MOTb T-27-21 M O T O R O L A SC (X ST R S


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PDF b3b72S4 2C3501HV iskaa chip die npn transistor
2SD1857

Abstract: 2SB1130M 2SB1236 2SD1665M
Text: /2SD1857 T-27-21 0.01 0.02 0.05 0.1 0.2 0.5 1 2 COLLECTOR CURRENT : lo (A) Fig.7 ¿F«3S&iIl«E Fig.8 0.01


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PDF 2SD1665M/2SD1857 --r-27-11 2SD1665Mxt 2SB1130M/2SB123613 2SB1130M, 2SB1236. 2SD1665M 2SD1857 T-27-21 2SB1130M 2SB1236
T2721

Abstract: No abstract text available
Text: R&JC R0JA 17.5 175 °C/W 118 MOTOROLA SC CXSTRS/R F) 4bE D ■b3b?2S4 0012S10 b «flOTb MM5682 T-27-21


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PDF b3b72SM MM5682 MIL-S-19500/xxx O-205AD T2721
2SB1237

Abstract: 2SB909M 2SD1225M 2SD1225 10X10 2SD1858 P01W l10x10
Text: Characteristic Curves 7fl2anei 000S504 7 MRHM 2SB909M/2SB1237 ~ T-27-21 g, g 100 s o 80 O 60 a ce g 20 O IL


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PDF G00S5G3 2SB909M/2SB1237 2sd1225m/2sd1858 2SB909M 2SB1237 2SD1225M, 2SD1858. 270Hz 10X10 2SB1237 2SB909M 2SD1225M 2SD1225 2SD1858 P01W l10x10
2N4401

Abstract: transistor 2n4401 philips 2N4400 philips 2N4400 2N4401 2N4400 N4400
Text: . min. max. min. max. max. max. 40 60 6 600 625 t-27-21 2N4401 V V v mA mW -65 to+150 °C


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PDF 2N4400 2N4401 711Dfl2b 0042bbb 711002b 0Q42bbà 2N4401 transistor 2n4401 philips 2N4400 philips 2N4400 2N4401 N4400
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