The Datasheet Archive

Top Results (3)

Part Manufacturer Description Datasheet Download Buy Part
DP11V2020A20K (5-1879322-7) TE Connectivity (5-1879322-7) DP11 VER 20P 20DET 20K M7*5MM
DP11SVN15A15F (5-1879323-7) TE Connectivity (5-1879323-7) DP11S VER 15P NDET 15F M7*5MM
DP11V3015A20F (7-1879322-7) TE Connectivity (7-1879322-7) DP11 VER 15P 30DET 20F M7*5MM

T20 ver 2 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - PD45128163

Abstract: uPD45128163G5-A75I-9JF-E uPD45128163G5-A75LI-9JF-E
Text: µPD45128163G5-A75LI-9JF-E TA = -40 to + 85°C L EO t uc od Pr 2 Data Sheet E0729N10 ( Ver . 1.0 , Sheet E0729N10 ( Ver . 1.0) µPD45128163-I-E 2 . Commands Mode register set command Fig.1 Mode , level, × = High or Low level (Don't care) Data Sheet E0729N10 ( Ver . 1.0) t 2 . Must be legal , (MIN.) ­ 2 +tDPL (MIN.) t uc Data Sheet E0729N10 ( Ver . 1.0) 25 µPD45128163-I-E 11 , -bit synchronous dynamic random-access memory, organized as 2 ,097,152 × 16 × 4 (word × bit × bank). The


Original
PDF PD45128163-I-E 128M-bit PD45128163 728-bit 54-pin E0729N10 uPD45128163G5-A75I-9JF-E uPD45128163G5-A75LI-9JF-E
2003 - PD45128163

Abstract: uPD45128163G5-A10LT-9JF uPD45128163G5-A10T-9JF uPD45128163G5-A75LT-9JF uPD45128163G5-A75T-9JF uPD45128163G5-A80LT-9JF uPD45128163G5-A80T-9JF PD45128163-T
Text: -9JF TA = -20 to + 85°C 125 100 L EO t uc od Pr 2 Data Sheet E0348N10 ( Ver . 1.0 , level, × = High or Low level (Don't care) Data Sheet E0348N10 ( Ver . 1.0) t 2 . Must be legal , Read Write ­1 +tDPL (MIN.) ­ 2 +tDPL (MIN.) t uc Data Sheet E0348N10 ( Ver . 1.0 , dynamic random-access memory, organized as 2 ,097,152 × 16 × 4 (word × bit × bank). The synchronous , Programmable burst length (1, 2 , 4, 8 and full page) · Programmable /CAS latency ( 2 and 3) · Ambient


Original
PDF PD45128163-T 128M-bit PD45128163 728-bit 54-pin uPD45128163G5-A10LT-9JF uPD45128163G5-A10T-9JF uPD45128163G5-A75LT-9JF uPD45128163G5-A75T-9JF uPD45128163G5-A80LT-9JF uPD45128163G5-A80T-9JF PD45128163-T
2003 - uPD45128163G5-A75LT-9JF

Abstract: PD45128163 uPD45128163G5-A10LT-9JF uPD45128163G5-A10T-9JF uPD45128163G5-A75T-9JF uPD45128163G5-A80LT-9JF uPD45128163G5-A80T-9JF PD45128163-T
Text: output buffers. 8 Data Sheet E0348N10 ( Ver . 1.0) µPD45128163-T 2 . Commands Mode register , , BA0(13), BA1(A12) Mode Register Set 20 Data Sheet E0348N10 ( Ver . 1.0) /CAS latency R R 2 , 2 ­1 +tDPL (MIN.) 3 ­ 2 +tDPL (MIN.) Data Sheet E0348N10 ( Ver . 1.0) 25 , dynamic random-access memory, organized as 2 ,097,152 × 16 × 4 (word × bit × bank). The synchronous DRAM , and UDQM · Programmable Wrap sequence (Sequential / Interleave) · Programmable burst length (1, 2 , 4


Original
PDF PD45128163-T 128M-bit PD45128163 728-bit 54-pin M01E0107 uPD45128163G5-A75LT-9JF uPD45128163G5-A10LT-9JF uPD45128163G5-A10T-9JF uPD45128163G5-A75T-9JF uPD45128163G5-A80LT-9JF uPD45128163G5-A80T-9JF PD45128163-T
2005 - PD45128163

Abstract: uPD45128163G5-A75-9JF-E
Text: output buffers. 8 Data Sheet E0728N10 ( Ver . 1.0) µPD45128163-E 2 . Commands Mode register , L L Op-Code MRS ILLEGAL Data Sheet E0728N10 ( Ver . 1.0) µPD45128163-E ( 2 /3 , 2 ­1 +tDPL (MIN.) 3 ­ 2 +tDPL (MIN.) Data Sheet E0728N10 ( Ver . 1.0) 25 , as 2 ,097,152 × 16 × 4 (word × bit × bank). The synchronous DRAM achieved high-speed data transfer , sequence (Sequential / Interleave) · Programmable burst length (1, 2 , 4, 8 and full page) · Programmable


Original
PDF PD45128163-E 128M-bit PD45128163 728-bit 54-pin M01E0107 uPD45128163G5-A75-9JF-E
2003 - PD45128163

Abstract: uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I
Text: output buffers. 8 Data Sheet E0346N10 ( Ver . 1.0) µPD45128163-I 2 . Commands Mode register , , BA0(13), BA1(A12) Mode Register Set 20 Data Sheet E0346N10 ( Ver . 1.0) /CAS latency R R 2 , 2 ­1 +tDPL (MIN.) 3 ­ 2 +tDPL (MIN.) Data Sheet E0346N10 ( Ver . 1.0) 25 , dynamic random-access memory, organized as 2 ,097,152 × 16 × 4 (word × bit × bank). The synchronous DRAM , and UDQM · Programmable Wrap sequence (Sequential / Interleave) · Programmable burst length (1, 2 , 4


Original
PDF PD45128163-I 128M-bit PD45128163 728-bit 54-pin M01E0107 E0346N10 uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I
2005 - PD45128163

Abstract: uPD45128163G5-A75I-9JF-E uPD45128163G5-A75LI-9JF-E
Text: µPD45128163G5-A75LI-9JF-E 2 TA = -40 to + 85°C Data Sheet E0729N10 ( Ver . 1.0) µPD45128163-I-E Part , output buffers. 8 Data Sheet E0729N10 ( Ver . 1.0) µPD45128163-I-E 2 . Commands Mode register , ­ 2 +tDPL (MIN.) Data Sheet E0729N10 ( Ver . 1.0) 23 µPD45128163-I-E 10. Auto Precharge , dynamic random-access memory, organized as 2 ,097,152 × 16 × 4 (word × bit × bank). The synchronous DRAM , and UDQM · Programmable Wrap sequence (Sequential / Interleave) · Programmable burst length (1, 2 , 4


Original
PDF PD45128163-I-E 128M-bit PD45128163 728-bit 54-pin M01E0107 E0729N10 uPD45128163G5-A75I-9JF-E uPD45128163G5-A75LI-9JF-E
2003 - uPD45128441G5-A75T-9JF

Abstract: uPD45128441G5-A80T-9JF PD45128441-T PD45128441 uPD45128441G5-A10T-9JF uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF
Text: PD45128841G5-A10LT-9JF 100 L t uc od Pr 2 Data Sheet E0347N10 ( Ver . 1.0) PD45128441-T, 45128841 , buffers. Data Sheet E0347N10 ( Ver . 1.0) t uc DQ0 - DQ8 9 PD45128441-T, 45128841-T 2 , Write ­1 +tDPL (MIN.) ­ 2 +tDPL (MIN.) t uc 24 Data Sheet E0347N10 ( Ver . 1.0 , (Sequential / Interleave) · Programmable burst length (1, 2 , 4, 8 and full page) · Programmable /CAS latency ( 2 and 3) · Ambient temperature (TA): -20 to + 85°C · Automatic precharge and controlled


Original
PDF PD45128441-T, 45128841-T 128M-bit PD45128441, 728-bit 54-pin uPD45128441G5-A75T-9JF uPD45128441G5-A80T-9JF PD45128441-T PD45128441 uPD45128441G5-A10T-9JF uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF
2003 - PD45128441

Abstract: PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF
Text: od Pr 2 Data Sheet E0343N10 ( Ver . 1.0) PD45128441, 45128841 Part Number [ x4, x8 , E0343N10 ( Ver . 1.0) t uc DQ0 - DQ8 9 PD45128441, 45128841 2 . Commands Mode register set , E0343N10 ( Ver . 1.0) t uc PRE/PALL REF/SELF 15 PD45128441, 45128841 ( 2 /3) Current state , Read Write ­1 +tDPL (MIN.) ­ 2 +tDPL (MIN.) t uc 24 Data Sheet E0343N10 ( Ver , /CAS latency = 2 , 3 DQ od T0 CLK Burst length = X Data Sheet E0343N10 ( Ver . 1.0


Original
PDF PD45128441, 128M-bit 728-bit 54-pin PD45128441 PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF
2003 - PD45128441

Abstract: uPD45128441G5-A10T-9JF uPD45128441G5-A75T-9JF uPD45128441G5-A80T-9JF PD45128441-T uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF uPD45128841G5-A80LT-9JF
Text: µPD45128841G5-A10LT-9JF 100 2 Data Sheet E0347N10 ( Ver . 1.0) Package Note 54-pin Plastic TSOP (II , ILLEGAL Data Sheet E0347N10 ( Ver . 1.0) 3 15 µPD45128441-T, 45128841-T ( 2 /3) Current state , ­1 +tDPL (MIN.) 3 26 Read ­ 2 +tDPL (MIN.) Data Sheet E0347N10 ( Ver . 1.0 , length (1, 2 , 4, 8 and full page) · Programmable /CAS latency ( 2 and 3) · Ambient temperature (TA): -20 , local Elpida Memory, Inc. for availability and additional information. Document No. E0347N10 ( Ver . 1.0


Original
PDF PD45128441-T, 45128841-T 128M-bit PD45128441, 728-bit 54-pin M01E0107 PD45128441 uPD45128441G5-A10T-9JF uPD45128441G5-A75T-9JF uPD45128441G5-A80T-9JF PD45128441-T uPD45128841G5-A10T-9JF uPD45128841G5-A75T-9JF uPD45128841G5-A80T-9JF uPD45128841G5-A80LT-9JF
2005 - PD45128163

Abstract: uPD45128163G5-A75-9JF-E
Text: 2 Data Sheet E0728N10 ( Ver . 1.0) PD45128163-E Part Number [ x16 ] PD45128163G5 - A75L , Sheet E0728N10 ( Ver . 1.0) t uc 14 3 PD45128163-E ( 2 /3) Current state /CS /RAS /CAS , Read Write ­1 +tDPL (MIN.) ­ 2 +tDPL (MIN.) t uc Data Sheet E0728N10 ( Ver . 1.0 , , organized as 2 ,097,152 × 16 × 4 (word × bit × bank). The synchronous DRAM achieved high-speed data , and UDQM · Programmable Wrap sequence (Sequential / Interleave) · Programmable burst length (1, 2


Original
PDF PD45128163-E 128M-bit PD45128163 728-bit 54-pin uPD45128163G5-A75-9JF-E
2003 - PD45128163

Abstract: PD45128163G5-A10-9JF PD45128163G5-A75-9JF PD45128163G5-A75A-9JF PD45128163G5-A75L-9JF PD45128163G5-A80-9JF PD45128163G5-A80L-9JF
Text: µPD45128163G5-A80L-9JF 125 2 Data Sheet E0344N10 ( Ver . 1.0) µPD45128163 Part Number [ x16 , output buffers. 8 Data Sheet E0344N10 ( Ver . 1.0) µPD45128163 2 . Commands Mode register set , L Op-Code MRS ILLEGAL Data Sheet E0344N10 ( Ver . 1.0) µPD45128163 ( 2 /3) Current , , BA0(13), BA1(A12) Mode Register Set 20 Data Sheet E0344N10 ( Ver . 1.0) /CAS latency R R 2 , 2 ­1 +tDPL (MIN.) 3 ­ 2 +tDPL (MIN.) Data Sheet E0344N10 ( Ver . 1.0) 23


Original
PDF PD45128163 128M-bit PD45128163 728-bit 54-pin M01E0107 PD45128163G5-A10-9JF PD45128163G5-A75-9JF PD45128163G5-A75A-9JF PD45128163G5-A75L-9JF PD45128163G5-A80-9JF PD45128163G5-A80L-9JF
2003 - PD45128163

Abstract: PD45128163G5-A10-9JF PD45128163G5-A75-9JF uPD45128163G5-A75A-9JF uPD45128163G5-A75L-9JF PD45128163G5-A80-9JF uPD45128163G5-A80L-9JF
Text: -9JF 133 PD45128163G5-A80L-9JF 125 L EO t uc od Pr 2 Data Sheet E0344N10 ( Ver . 1.0 , Read Write ­1 +tDPL (MIN.) ­ 2 +tDPL (MIN.) t uc Data Sheet E0344N10 ( Ver . 1.0 , , organized as 2 ,097,152 × 16 × 4 (word × bit × bank). The synchronous DRAM achieved high-speed data , and UDQM · Programmable Wrap sequence (Sequential / Interleave) · Programmable burst length (1, 2 , 4, 8 and full page) · Programmable /CAS latency ( 2 and 3) · Automatic precharge and controlled


Original
PDF PD45128163 128M-bit PD45128163 728-bit 54-pin PD45128163G5-A10-9JF PD45128163G5-A75-9JF uPD45128163G5-A75A-9JF uPD45128163G5-A75L-9JF PD45128163G5-A80-9JF uPD45128163G5-A80L-9JF
2003 - PD45128441

Abstract: uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
Text: µPD45128841G5-A10LI-9JF 100 2 Data Sheet E0345N10 ( Ver . 1.0) Package Note 54-pin Plastic TSOP (II , ILLEGAL Data Sheet E0345N10 ( Ver . 1.0) 3 15 µPD45128441-I, 45128841-I ( 2 /3) Current state , ­1 +tDPL (MIN.) 3 26 Read ­ 2 +tDPL (MIN.) Data Sheet E0345N10 ( Ver . 1.0 , length (1, 2 , 4, 8 and full page) · Programmable /CAS latency ( 2 and 3) · Ambient temperature (TA): -40 , local Elpida Memory, Inc. for availability and additional information. Document No. E0345N10 ( Ver . 1.0


Original
PDF PD45128441-I, 45128841-I 128M-bit PD45128441, 728-bit 54-pin M01E0107 E0345N10 PD45128441 uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
2003 - PD45128441

Abstract: PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF
Text: -9JF 125 4M × 8 × 4 µPD45128841G5-A80L-9JF 2 133 133 125 Data Sheet E0343N10 ( Ver . 1.0 , ­1 +tDPL (MIN.) 3 24 Read ­ 2 +tDPL (MIN.) Data Sheet E0343N10 ( Ver . 1.0 , (1, 2 , 4, 8 and full page) · Programmable /CAS latency ( 2 and 3) · Automatic precharge and , and additional information. Document No. E0343N10 ( Ver . 1.0) Date Published February 2003 (K) Japan , Minimum cycle time 4 : x4 8 : x8 75A 75 80 10 : 7.5 ns (133 MHz @CL= 2 ) : 7.5 ns (133 MHz


Original
PDF PD45128441, 128M-bit 728-bit 54-pin M01E0107 PD45128441 PD45128441G5-A10-9JF PD45128441G5-A75-9JF uPD45128441G5-A75A-9JF PD45128441G5-A80-9JF PD45128841G5-A10-9JF PD45128841G5-A75-9JF uPD45128841G5-A75A-9JF PD45128841G5-A80-9JF
2003 - PD45128163

Abstract: uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I
Text: L EO t uc od Pr 2 Data Sheet E0346N10 ( Ver . 1.0) µPD45128163-I Part Number , Sheet E0346N10 ( Ver . 1.0) µPD45128163-I 2 . Commands Mode register set command Fig.1 Mode , level, × = High or Low level (Don't care) Data Sheet E0346N10 ( Ver . 1.0) t 2 . Must be legal , (MIN.) ­ 2 +tDPL (MIN.) t uc Data Sheet E0346N10 ( Ver . 1.0) 25 µPD45128163-I 11 , -bit synchronous dynamic random-access memory, organized as 2 ,097,152 × 16 × 4 (word × bit × bank). The


Original
PDF PD45128163-I 128M-bit PD45128163 728-bit 54-pin E0346N10 uPD45128163G5-A10I-9JF uPD45128163G5-A10LI-9JF uPD45128163G5-A75I-9JF uPD45128163G5-A75LI-9JF uPD45128163G5-A80I-9JF uPD45128163G5-A80LI-9JF PD45128163-I
2003 - PD45128441

Abstract: uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
Text: PD45128841G5-A10LI-9JF 100 L t uc od Pr 2 Data Sheet E0345N10 ( Ver . 1.0) PD45128441-I, 45128841 , buffers. Data Sheet E0345N10 ( Ver . 1.0) t uc DQ0 - DQ8 9 PD45128441-I, 45128841-I 2 , Write ­1 +tDPL (MIN.) ­ 2 +tDPL (MIN.) t uc 24 Data Sheet E0345N10 ( Ver . 1.0 , (Sequential / Interleave) · Programmable burst length (1, 2 , 4, 8 and full page) · Programmable /CAS latency ( 2 and 3) · Ambient temperature (TA): -40 to + 85°C · Automatic precharge and controlled


Original
PDF PD45128441-I, 45128841-I 128M-bit PD45128441, 728-bit 54-pin PD45128441 uPD45128441G5-A10I-9JF uPD45128441G5-A75I-9JF uPD45128441G5-A80I-9JF PD45128441-I uPD45128841G5-A10I-9JF uPD45128841G5-A75I-9JF uPD45128841G5-A80I-9JF
2001 - Not Available

Abstract: No abstract text available
Text: EDL1216CASA-10 8M × 16 4 100 3 54-ball FBGA Data Sheet E0195E20 ( Ver . 2.0) 2 , VDDQ + 1.5V (pulse width 5ns). 2 . VIL (min.) = ­1.5V (pulse width 5ns). Data Sheet E0195E20 ( Ver , 2 -1 +tDPL(min.) 3 - 2 +tDPL(min.) Data Sheet E0195E20 ( Ver . 2.0) 25 , Q2 D1 Hi-Z is necessary Read to Write Command Interval 2 Data Sheet E0195E20 ( Ver . 2.0 , Configurations The EDL1216CA is a 128M bits Mobile RAM organized as 2 ,097,152 words × 16 bits × 4 banks. The


Original
PDF EDL1216CASA EDL1216CA 54-ball M01E0107 E0195E20
2002 - Not Available

Abstract: No abstract text available
Text: : VDD = 2.5V, VDDQ = 2.5V, LVCMOS Die Rev. Data Sheet E0255E20 ( Ver . 2.0) 2 EDL1216BASA , 1.5V (pulse width 5ns). 2 . VIL (min.) = ­1.5V (pulse width 5ns). Data Sheet E0255E20 ( Ver . 2.0 , Interval 2 Data Sheet E0255E20 ( Ver . 2.0) 29 EDL1216BASA Burst Termination There are two , Configurations The EDL1216BA is a 128M bits Mobile RAM organized as 2 ,097,152 words × 16 bits × 4 banks. The , packaged in 54-ball FBGA (µBGA). /xxx indicates active low signal. 54-ball FBGA ( BGA) 1 2 3


Original
PDF EDL1216BASA EDL1216BA 54-ball M01E0107 E0255E20
2003 - EDL6416BABH-75-E

Abstract: edl6416
Text: Rev. Preliminary Data Sheet E0421E30 ( Ver . 3.0) 2 EDL6416BABH CONTENTS Description , 2 . VIL (min.) = ­1.0V (pulse width 5ns). Preliminary Data Sheet E0421E30 ( Ver . 3.0) 4 , ( Ver . 3.0) 5 EDL6416BABH DC Characteristics 2 (TA = ­25 to +85°C, VDD = 2.5V ± 0.2V, VDDQ = , Sheet E0421E30 ( Ver . 3.0) WT = 1 1 2 4 8 R R R R A0 Partial Array Self Refresh , 2 -1 +tDPL(min.) 3 - 2 +tDPL(min.) Preliminary Data Sheet E0421E30 ( Ver . 3.0) 24


Original
PDF EDL6416BABH EDL6416BABH 54-ball M01E0107 E0421E30 EDL6416BABH-75-E edl6416
2004 - Not Available

Abstract: No abstract text available
Text: , VDDQ = 1.8V, LVCMOS Preliminary Data Sheet E0490E20 ( Ver . 2.0) 2 EDL5132CBMA CONTENTS , (pulse width 5ns) 2 . VIL (min.) = ­1.0V (pulse width 5ns) Preliminary Data Sheet E0490E20 ( Ver . 2.0 , . Preliminary Data Sheet E0490E20 ( Ver . 2.0) 5 EDL5132CBMA DC Characteristics 2 (TA = ­25 to +85°C, VDD , ACT PRE/PALL REF MRS/EMRS 2 2 2 2 2 2 2 2 2 2 , 8 2 Preliminary Data Sheet E0490E20 ( Ver , . /CAS latency 2 3 Read -1 - 2 Write +tDPL(min.) +tDPL(min.) Preliminary Data Sheet E0490E20 ( Ver . 2.0


Original
PDF 256Mb EDL5132CBMA EDL5132CBMA 90-ball M01E0107 E0490E20
2002 - Not Available

Abstract: No abstract text available
Text: ( Ver . 4.0) 2 EDL1216BASA CONTENTS Description , 1.5V (pulse width 5ns). 2 . VIL (min.) = ­1.5V (pulse width 5ns). Data Sheet E0255E40 ( Ver . 4.0 , Configurations The EDL1216BA is a 128M bits Mobile RAM organized as 2 ,097,152 words × 16 bits × 4 banks. The , packaged in 54-ball FBGA (µBGA). /xxx indicates active low signal. 54-ball FBGA ( BGA) 1 2 3 , (CL) = 2 , 3 · Automatic precharge and controlled precharge · Auto refresh and self refresh · ×16


Original
PDF EDL1216BASA EDL1216BA 54-ball M01E0107 E0255E40
2001 - Not Available

Abstract: No abstract text available
Text: MHz (max.) 133 /CAS latency 3 Package 54-ball FBGA Preliminary Data Sheet E0198E10 ( Ver . 1.0) 2 , 2 2 2 2 2 , 8 2 Preliminary Data Sheet E0198E10 ( Ver . 1.0) 16 EDL6416AA Current state , to Write Command Interval 2 Preliminary Data Sheet E0198E10 ( Ver . 1.0) 29 EDL6416AA Burst , STANDBY [Burst Length = 4, /CAS Latency = 2 ] Preliminary Data Sheet E0198E10 ( Ver . 1.0) 41 , DQ0 VDD 2 3 4 5 6 7 8 9 B DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 Features · Low


Original
PDF EDL6416AA EDL6416 54-ball M01E0107 E0198E10
2002 - Not Available

Abstract: No abstract text available
Text: E0330E41 ( Ver . 4.1) 2 EDL1216CASA-10L CONTENTS Description , (pulse width 5ns). 2 . VIL (min.) = ­1.0V (pulse width 5ns). Data Sheet E0330E41 ( Ver . 4.1) 4 , surface temperature. Data Sheet E0330E41 ( Ver . 4.1) 5 EDL1216CASA-10L DC Characteristics 2 (TA , 5, 6 2 3 3 2 4 2 2 Notes Data Sheet E0330E41 ( Ver . 4.1) 15 EDL1216CASA-10L Current , . /CAS latency 2 3 Read -1 - 2 Write +tDPL(min.) +tDPL(min.) Data Sheet E0330E41 ( Ver . 4.1) 25


Original
PDF EDL1216CASA-10L EDL1216CA 54-ball M01E0107 E0330E41
2001 - Not Available

Abstract: No abstract text available
Text: : VDD = 1.8V, VDDQ = 1.8V, LVCMOS Die Rev. Data Sheet E0195E30 ( Ver . 3.0) 2 EDL1216CASA , VDDQ + 1.5V (pulse width 5ns). 2 . VIL (min.) = ­1.5V (pulse width 5ns). Data Sheet E0195E30 ( Ver , 2 -1 +tDPL(min.) 3 - 2 +tDPL(min.) Data Sheet E0195E30 ( Ver . 3.0) 25 , Q2 D1 Hi-Z is necessary Read to Write Command Interval 2 Data Sheet E0195E30 ( Ver . 3.0 , Configurations The EDL1216CA is a 128M bits Mobile RAM organized as 2 ,097,152 words × 16 bits × 4 banks. The


Original
PDF EDL1216CASA EDL1216CA 54-ball M01E0107 E0195E30
2002 - Not Available

Abstract: No abstract text available
Text: Power Speed 75: 133MHz/CL3, 100MHz/CL2 Package SA: µBGA Die Rev. Data Sheet E0329E20 ( Ver . 2.0) 2 , 2 2 2 2 2 , 8 2 Data Sheet E0329E20 ( Ver . 2.0) 16 EDL1216BASA-75L Current state Write , Interval 2 Data Sheet E0329E20 ( Ver . 2.0) 29 EDL1216BASA-75L Burst Termination There are two , ) SUSPENDED at the end of burst [Burst Length = 4, /CAS Latency = 2 ] Data Sheet E0329E20 ( Ver . 2.0 , STANDBY [Burst Length = 4, /CAS Latency = 2 ] Data Sheet E0329E20 ( Ver . 2.0) 41 EDL1216BASA


Original
PDF EDL1216BASA-75L EDL1216BA 54-ball M01E0107 E0329E20
Supplyframe Tracking Pixel