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BY509

Abstract: BY 509 diode BY509 z650 T0309
Text: _" -_u_ N AMER PHILIPS/DISCRETE QbE D ■^53=131 GOllGTS 4 "by ouy T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass envelope intended for use in high-voltage , /DISCRETE DbE D bbS3131 GOllCHb h BY509 T-03-09 RATINGS Limiting values in accordance with the , e.h.t. soft-recovery rectifier diode 'F(AV) ImA) 50 7Z82239 100 150 Tamb(°C) BY509 T-03-09 Fig , RE TÈ DbÈ~l> ■^53131 OOIÏÏÏTÎTT BY 509 T-03-09 7Z82240 200 ' F (mA) 100 0 0 50 100


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PDF T-03-09 7Z82240 BY509 BY 509 diode BY509 z650 T0309
BAS32

Abstract: diode bas32 IEC134 BAS32 sod80
Text: 41E D 711002b 00533bt. 0 eSPHIN PHILIPS INTERNATIONAL BAS32 T-03-09 HIGH-SPEED SILICON DIODE , 00233bô M ^IPHIN BAS32 T-03-09 input signal output signal Fig. 2 Forward recovery voltage test , Manufacturer PHILIPS INTERNATIONAL BAS32 200 F ( AV) (mA) 100 41E D 711002b 00533LT fe ^PHIN T-03-09 - , versus ambient temperature. 711002b) 0023370 2 ^IPHIN BAS32 T-03-09 300 ImA) 200 100 7Z72420.1 s , Manufacturer PHILIPS INTERNATIONAL BAS32 (V) 1,5 0,5 l MIE D m 7HGô2b 0023371 M EBPHIN T-03-09


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PDF 711002b 00533bt. BAS32 T-03-09 diode bas32 IEC134 BAS32 sod80
Not Available

Abstract: No abstract text available
Text: SMBD 7000 SIEMENS/ SPCLi SEMICONDS T-03-09 C h a ra c te ris tic s at T = 25 °C, unless , T-03-09 Reverse current /R = f{T&) mW 400 300 * 200 St V 100 A Et 0 , SIEMENS/ SPCL-, SEMICONDS SMBÜ 7000 T-03-09 Forward voltage Vf = f{TA) 0 50 100 150


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PDF 23b320 T-03-09 23b32Q
BY509

Abstract: diode BY509 GQ11G1S 7Z82239 T-03-09 T0309
Text: N AMER PHILIPS/DISCRETE QbE D mz_u_ 1,1=53^31 GQ11G1S 4 ■Bïoua T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass envelope intended for use in high-voltage , DOllOTb b BY509 T-03-09 RATINGS Limiting values in accordance with the Absolute Maximum System (I EC , . soft-recovery rectifier diode 'F(AV) (mA) 50 7Z82239 100 150 Tamb <°C) BY509 T-03-09 Fig. 3 Maximum , T-03-09 200 ImA) 100 7Z82240 H-4- -44-4- ■i- / V f- v \ , i


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PDF GQ11G1S T-03-09 BY509 7Z82240 BY509 diode BY509 7Z82239 T-03-09 T0309
BY509

Abstract: diode BY509
Text: _ U _ N AMER PHILIPS/DISCRETE QbE D ^53= 131 D 0H 01S 4 ■EJYDUa T-03-09 SILICON E.H.T. SOFT-RECOVERY RECTIFIER DIODE E.H.T. rectifier diode in a glass , 113 N AMER PHILIPS/DISCRETE ObE D bbS3131 DOllQTb b BY509 T-03-09 RATINGS Limiting , BY509 Silicon e.h.t. soft-recovery rectifier diode T-03-09 7Z82239 Fig. 3 Maximum permissible , bL53T31 OOllCHfl T BY 50 9 T-03-09 I 0 50 100 vF (V) 150 Fig. 6 -Tj = 25


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PDF T-03-09 0011CH7 BY509 7Z82239 bL53T31 BY509 diode BY509
BAW62

Abstract: 1970 oscilloscope T0309 T-03-09
Text: t-03-09 " ratings Limiting values in accordance with the Absolute Maximum System (IEC 134 , High-speed silicon diode IPHIN- 11 T-03-09 BAW62 PHILIPS INTERNATIONAL 5bE T> CHARACTERISTICS (continued , –Eb 0D4D322 ÖEb BAW62 j| PHILIPS INTERNATIONAL 5bE p PHIN t-03-09 CHARACTERISTICS (continued) Recovery charge , I)_ PHILIPS INTERNATIONAL_5bE D 300 PHIN t-03-09 7Z72419.1 'F(AV) T-03-09 BAW62 _IS_ PHILIPS INTERNATIONAL 2 "f r (V) 1,5 5bE D 7Z 10526.1


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PDF BAW62 DO-35 OD-27 DO-35) 1970 oscilloscope T0309 T-03-09
Not Available

Abstract: No abstract text available
Text: Ÿ23b320 OOlfc.S'm 1 H S I P SM B D 2835/36 SIEMENS/ SPCL-, SEMICONDS T-03-09 Characteristics at 7^ = 25 °C , SIEMENS/ SPCLi SEMICONDS SM B D 2835/36 T-03-09 Total pow er dissipation P10t = ^ ( 7a ) Reverse , / SPCLi SEM ICONDS I SM B D 2835/36 T-03-09 k h Forward voltage Vf = f(T^) 0 50 100


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PDF E3b32Q 23b32Q T-03-09 23b320
Not Available

Abstract: No abstract text available
Text: « S I P BAL 74 SIEMENS/ SPCLi SEMICONPS T-03-09 Electrical characteristics at 7X = 25 °C , S I P BAL 74 SIEMENS/ SPCL, SEMICONDS T-03-09 Total pow er dissipation P t0i = í(Ta) R e , 150 °C Siemens T-03-09


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PDF 001b4 Q62702-A614 Q62702-A718 QQlb474 T-03-09 23b320 QQlb475
Not Available

Abstract: No abstract text available
Text: D m fl23b320 O D lbSO ? 2 « S I P B A S 28 SIEMENS/ SPCLi SEMICONDS T-03-09 , Siemens 32E D ■Û23b320 OOlbSOÔ 4 m Z I P B A S 28 SIEMENS/ SPCLi SEMICONDS T-03-09 T , ”23b320 Q ü lb S G S h « S IP SPCL-i SEMICONDS B A S 28 SIEMENS/ T-03-09 Forw ard v o lta


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PDF 23b320 Q62702-A163 Q62702-A77 T-03-09 23b320
Q62702-A471

Abstract: No abstract text available
Text: -. MSIP 7 SEM ICON DS BAW56 - T-03-09 , - BAW56 T-03-09 Reverse current /n = A(7X) Total power dissipation Ptot ” f {Ta ) m W , - BAW56 T-03-09 Forward voltage Ve » f ( h ) 0 50 100 — 150 °C -rA


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PDF 023b35Q Q62702-A471 Q62702-A688 BAW56 T-03-09 23b320 Q62702-A471
SIEMENS VF 100

Abstract: GS7070
Text: on alumina 15 mm x 16.7 mm x 0.7 mm Siemens 51 32E D Ô23b320 001^477 ñ « S I P T-03-09 , 99 SIEMENS/ SPCLi SEMICÔNDS T-03-09 Total power dissipation P tBt ·f { T a) mW 400 Reverse , 001^47^ 1 H S I P T-03-09 BAL 99 SIEMENS/ SPCL, SEMICONDS F o rw a rd v o lta g e V f = f (Ta


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PDF BAL99 fl23fc Q62702-A611 Q62702-A687 23b320 G01bM7û T-03-09 fl23fei32Q SIEMENS VF 100 GS7070
Not Available

Abstract: No abstract text available
Text: 6100 SIEMENS/ SPCLi SEMICONDS T-03-09 C h a ra c te ris tic s at 7^ = 25 °C, unless otherwise , ) SMBD6100 T-03-09 Reverse current fn = f[TA) mW Forward current /F = f (Vfc) 7Á = 25°C Peak , S I P i SIEMENS/ SPCL-. SEMICONDS SMBD 6100 T-03-09 Forward voltage Vf = f{TA) 0 50


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PDF 23b32Ã 23L32Q SMBD6100 T-03-09 fl23b320
Diode BAY 68

Abstract: diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode Diode BAY ODOT747 marking 69
Text: OClOWfe, 5 ■BAY 68 • BAY 69 T-03-09 Characteristics Min. Typ. Max. 7j = 25 °C, unlei Forward , 11-^-=0.01, fp = 0.3 ms 36 AEG CORP 17E D ■0D2TM2b ODOT747 4 ■BAY 68 • BAY 69 _ T-03-09 37


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PDF rLS25Â T-03-09 ODOT747 Diode BAY 68 diode bay 69 Diode BAY 45 diode I-35 L aeg diode bay 68 diode Diode BAY marking 69
Not Available

Abstract: No abstract text available
Text: t SEMICONDS T-03-09 Characteristics at 7 = 25 °C, unless otherwise specified ^ DC , T-03-09 R everse current /r = f( T A ) Total p ow er d issip a tion Pxox^ f ( 7Ä) mW Forw , SEMICONDS SMBD 2837/38 T-03-09 Forward voltage Vr = f(7 a ) 0 SO 100 150 °C -


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PDF 23b320 T-03-09
Diode BAY 54

Abstract: 68W35 telefunken diodes 914 Diode BAY 12 BAY69 AL6G Diode BAY 45 Diode BAY 69 Scans-0014926 marking 69
Text: – fl^OCnb QODTTMb T ■AL6G BAY 68 • BAY 69 T-03-09 Characteristics Min. Typ. Max. 7j = 25 °C, unless , / / / 0 10 20 30 40 V 1?E D ■fl^SGOIb Q0GT74? C BAY 68 • BAY 69 _ T-03-09 100 PA 50 10 5 BAY


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PDF r-03-Ã Q0GT74? T-03-09 Ij-100Â Diode BAY 54 68W35 telefunken diodes 914 Diode BAY 12 BAY69 AL6G Diode BAY 45 Diode BAY 69 Scans-0014926 marking 69
aaf marking sot23-5

Abstract: No abstract text available
Text: - T-03-09 Maximum Ratings per Diode Symbol Value Unit 40 Parameter Reverse , Q lbSlE b H S I P BAS 40 SIEMENS/ SPCLi SEMICONDS T-03-09 Characteristics per Diode at 7X =


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PDF aa3b32Q OT-23 62702-D 10kHz 23b35Q T-03-09 aaf marking sot23-5
BAV99

Abstract: No abstract text available
Text: SIEMENS/ SPCLi SE MICÔNDS T-03-09 Electrical characteristics per diode at 7a = 25 °C, unless , I P BAV99 SIEMENS/ SPCL-. SEMICONDS T-03-09 T o t a l p o w er d is s ip a tio n P tot =


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PDF Q68000-A1185 Q68000-A549 fl23b32G BAV99 T-03-09 23b320 0QlbS42 BAV99
bav 27 v

Abstract: BAV100 ir 0588 BAV103 aeg diode S906 diode bav
Text: – BAV100. BAV103 T-03-09 Min. Typ. Max. Characteristics = 25 °C, unless otherwise specified Forward , = 0.3 ms AEG CORP 17E I) 005T45b 0001737 1 ■BAV100. BAV103 _ T-03-09 1.6 V 1.2 0.8 0.4


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PDF BAV100. BAV103 mmx50 D0CH73b BAV103 T-03-09 bav 27 v BAV100 ir 0588 aeg diode S906 diode bav
BAV45

Abstract: No abstract text available
Text: switched from lF = 10 mAto Ir = 10 mA; R|_= 100 ft; measured at lp = 1 mA i'iijijiliülu tfemuflflj T-03-09 , Philips Semiconductors. 5bE D ■711Qfl2b QOHQEÖb Tb5 «PHIN BAV45 jj PHILIPS INTERNATIONAL SbE D T-03-09


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PDF BAV45 711002b 711Qfl2b T-03-09
ir 0588

Abstract: LL4150
Text: 7 ■LL4150 T-03-09 Characteristics Min. Typ. Max. 7"j = 25 °C, unless otherwise specified


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PDF G02T42b 11LIPMK LL4150 mmx50 G0Q1fl72 LL4150 T-03-09 ir 0588
Not Available

Abstract: No abstract text available
Text: - T-03-09 Electrical characteristics at 7a = 25 °C, unless otherwise specified DC


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PDF Q62702-A3444 Q62702-A712
baw 92

Abstract: No abstract text available
Text: Electronic-Library Service CopyRight 2003 TELEFUNKEN ELECTRONIC BAW 24. B AW 27 17E D ■flISOOSb OOCmHO 6 T-03-09


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PDF r-03-oi baw 92
Not Available

Abstract: No abstract text available
Text: ”23b320 0QlbS3ü Ô « S I P BAT 64 SIEMENS/ SPCLi SEMICONDS T-03-09 Electrical Characteristics at Ta -


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PDF 23b32Ã 2702-A OT-23 25K/W 23b320 T-03-09
Not Available

Abstract: No abstract text available
Text: / / // 0,5 1.0 1,5 V ►'f V 178 T-03-09 R e v e rse cu rren t In = f { T^) Total pow


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PDF 23b320 53b3S0 T-03-09
Diode BAY 93

Abstract: 0588 ir 0588
Text: °C K/W T1.2/916.0588 E 43 E G CORP 17E D ■0021421= 000=1754 1 ■BAY 93 T-03-09


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PDF 0QSei42b T-03-09 Diode BAY 93 0588 ir 0588
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