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31NT391-3-C08 Honeywell Sensing and Control Allied Electronics & Automation - $22.21 $22.21
31NT391-3-C08 Honeywell Sensing and Control Allied Electronics & Automation - $26.71 $22.43
31NT391-3-C08 Honeywell Sensing and Control / MICRO SWITCH Sager - $22.24 $19.54
31NT391-3-C08 Honeywell Sensing and Control Master Electronics 21 $24.46 $17.79
31NT391-3-C08 Honeywell Sensing and Control Chip1Stop 15 $23.48 $19.71
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CGAT-39/13-0 TE Connectivity Ltd Allied Electronics & Automation - $10.31 $8.28
CGAT-39/13-0 TE Connectivity Ltd RS Components 344 £17.81 £16.03
CGAT-39/13-0-SP TE Connectivity Ltd Heilind Electronics - Asia - - -
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CGPT-39/13-0-SP TE Connectivity Ltd Heilind Electronics - Asia - - -
CGPT-39/13-0-SP TE Connectivity Ltd Chip1Stop 60 $8.61 $8.61
CGPT-39/13-0-SP TE Connectivity Ltd Interstate Connecting Components - - -
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CGPT-39/13-X-SP Littelfuse Inc Chip1Stop 12 $7.93 $7.91
CGPT-39/13-X-SP TE Connectivity Ltd Heilind Electronics - Asia - - -
CGPT-39/13-X-SP TE Connectivity Ltd Master Electronics 24 - -
CIR030-18-1SF80T39-13 ITT Interconnect Solutions PEI Genesis 38 $35.25 $26.96
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T-39-13 datasheet (2)

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T3913 Semicon Components 30A Iout, 400V Vrrm Fast Recovery Rectifier Scan PDF
T3913R Semicon Components 30A Iout, 400V Vrrm Fast Recovery Rectifier Scan PDF

T-39-13 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Not Available

Abstract: No abstract text available
Text: PHILIPS/DISCRETE ObE D ■bb53131 DOlHbSS 1 ■r T-39-13 RATINGS Limiting values in , N AM ER PHILIPS/DISCRETE ObE D ■^ ^ 53^ 31 DOmbSb 0 ■T-39-13 REVERSE DIODE , BUZ45A_ _ ' DbE D ■bb53T31 0014bS7 2 L T-39-13 - . ifc Fig.3 Typical output , T-39-13 PowerMOS transistor N AflER PHILIPS/DISCRETE _ _ BUZ45A_ DbE D ■bbSBTBl D014bST t ■[ 345 t T-39-13 PowerMOS transistor _ _


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PDF BUZ45A_ bb53T31 0014bS7 T-39-13 T-39-13 D014bST BUZ45A
Not Available

Abstract: No abstract text available
Text: _ _ T-39-13 RATINGS Limiting values in accordance with the Absolute Maximum System , _ BUZ14_ — _ ObE D ■bb53131 0014S7T f ■l T-39-13 1 REVERSE , _ N AMER PHILIPS/DISCRETE ObE D ■bb53^31 ODm i a O M ■T-39-13 100 A. h 80 , OL eT D ■bb53131 0014561 b . 267 T-39-13 PowerMOS transistor_ _ N AMER PHILIPS/DISCRETE QtE D ■BUZ14 hbS3^31 0014532 f ■l T-39-13' 268


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PDF BUZ14 bb53T31 bb53131 T-39-13 T-39-13' BUZ14---------------------------- 0D145f
transistor et 455

Abstract: transistor et 454
Text: PowerMOS transistor & bb53131 D0147b7 1 BUZ351 T-39-13 RATINGS Limiting values in accordance , /DISCRETE_ ObE D PowerMOS transistor ■bbS3T31 OD147ba 0 ■— BUZ351 T-39-13 REVERSE , 00147bT 2 ■> ™ T-39-13 Fig.3 K )S Typical output characteristics If) = f ( vDS , PowerMOS transistor □ bE D bfc.53131 0 0 1 4 7 7 0 1 BUZ351 T-39-13 456 N AMER PHI LI PS/ DI SCRETE PowerMOS transistor ObE D bbSBTBl D 0 m 7 7 1 0 BUZ351 T-39-13 457 N AMER


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PDF 0D147bb T0218AA; 00147bT T-39-13 BUZ351 001477E transistor et 455 transistor et 454
DIODE REDRESSEMENT

Abstract: 3909 diode byx diode byx 65 400 hacheur Thomson-CSF diode wj s6c thomson diodes BYX 98 uste 100
Text: discrets. 1N 3909^1 N 3913 , (R) BYX 64-600, (R) SUPERSWITCH 59C 02083 FAST RECOVERY RECTIFIER DIODES , 3fi2.im IN 3913 , IH! ■YXM M. 01) DC reverse voltage Tantion invernò continue Vr 50 100 200 300 400 , Teiax : 610560 F 93 July 1983 1/9 1\THOMSON S G S—THOMSON IN 3909 - IN 3913 ' ' ' - " " - " ' . ^ , 3909 -» IN 3913 BYX 64-600 FIGURE 5 S G S—THOMSON 1 Sic D I 7TETE37 aOQaOfl? 0 5 9C 0 2087 IN 3909 - IN 3913 BYX 64-600 FORWARD CHARACTERISTICS CARACTÉRISTIQUES DIRECTES lF (A) s 2 102 e 2


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PDF 1/4-28UNF 250cm 310cm CB-34) DIODE REDRESSEMENT 3909 diode byx diode byx 65 400 hacheur Thomson-CSF diode wj s6c thomson diodes BYX 98 uste 100
3713

Abstract: 3913
Text: Surface Illumination Type(Non-Diffused) SEL 3213 C SEL 3413 E SEL 3713 K SEL 3813 A SEL 3913 K , lv Intensity S E L 3713 K S E L 3813 A SEL 3913 K SEL 3 2 1 3 C Including Angle B etw een Half Intensity Points SEL 3413 E SEL 3713 K S E L 3813 A S E L 3913 K SEL 3 2 1 3 C SEL 3413 E Ap Peak Wavelength SEL 3713 K SEL 3813 A SEL 3913 K SEL 3213 C S E L 3413 E AA Spectral Line Halfwidth SEL 3 7 1 3 K S E L 3813 A SEL 3913 K SEL3213C SEL 3413 E Ad Dominant Wavelength SEL 3713 K S E L 3813 A SEL 3913 K


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PDF iD741 3713 3913
Not Available

Abstract: No abstract text available
Text: fransistor bbS3T31 □□14751 3 . T-39-13 RATINGS Limiting values in accordance with the Absolute , bb53131 0014782 5 BUZ331 T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C unless , PowerMOStransIstor DbE D ■bb53T31 0014763 7 uvzssi , T-39-13 A Fig.3 Typical output , – BUZ331 T-39-13 Fig. 6 Typical drain-source on-state resistance r DS(ON) = M d ) _ , . ■bb53c m 0014765 □ ■BUZ331 T-39-13 471 N AMER PHIL IP S/D IS CR ETE


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PDF T0218AA BUZ331 T-39-13 bb53c bb53T31 00147fib
BUZ54A

Abstract: t03 package transistor pin dimensions T-39-13 transistor BUZ54 IEC134 T3913 C413N 4-10N
Text: PIER PHILIPS/DISCRETE ObE D ■bfa53131 001M7E5 M ■PowerMOS transistor ~ BUZ54A ™ T-39-13 , /DISCRETE OLE I) ■b PowerMOS transistor BUZ54A T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb , transistor "" BUZ54A • T-39-13 "V \ k S , = 25 °C. 413 N AMER PHILIPS/DISCRETE PowerMOS transistor □ LE D bbSBTBl Q0147SS T BUZ54A T-39-13 , ImA. 414 N ANER PHILIPS/DISCRETE DhE D ■bbS3T31 0D14751 1 ■PowerMOS transistor BUZ54A T-39-13


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PDF BUZ54A 7Z63885 bbS3T31 0D14751 T-39-13 BUZ54A t03 package transistor pin dimensions T-39-13 transistor BUZ54 IEC134 T3913 C413N 4-10N
BUZ24

Abstract: IEC134
Text: envelopes. 284 This Material Copyrighted By Its Respective Manufacturer PowerMOS transistor BUZ24 T-39-13 , transistor BUZ24 T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °c unless otherwise specified , PHILIPS/DISCRETE OLE D 1^53131 oomtDi a T-39-13 140 w p 120 m) | 100 80 60 40 20 0 Fig , Respective Manufacturer PowerMOS transistor BUZ24 N AI1ER PHILIPS/DISCRETE ObE D fc.bS3T31 OOlMbOS T T-39-13 , AMER PHILIPS/DISCRETE ObE D ■b (353^31 DD14tD3 1 ■T-39-13 Fig. 10 Typical capacitances C=f(Vpg


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PDF 00145T6 BUZ24 T-39-13 BUZ24 IEC134
BUZ54

Abstract: No abstract text available
Text: /DISCRETE OfaE D ■LbS3131 001M71Ô 7 T-39-13 RATINGS Limiting values in accordance with the Absolute , transistor_ BUZ54_ _| "¡Tamer phi lips/ discrete otE d ■tbSB^Bi o oi4 i ■_ T-39-13 REVERSE DIODE , BUZ54 T-39-13 140 w 120 100 80 60 40 20 0 V v s V V V Sk , D ^53^31 0014721 ? PowerMOS transistor BUZ54 T-39-13 RDS(ON , PowerMOS transistor ObE D ¡3^53^31 0D1M7EE 1 JBUZ54 T-39-13 Fig. 10 Typical capacitances C=f( Vds


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PDF BUZ54 bhS3T31 D014717 JBUZ54 T-39-13 BUZ54
buz357

Abstract: Transistor 5331 MC 140 transistor
Text: PowerMOS transistor ^53^31 DQIMÖMM 1 BUZ357 T-39-13 RATINGS Limiting values in accordance with the , REVERSE DIODE RATINGS AND CHARACTERISTICS ObE D bbSBTBl GGlMfiHS 3 BUZ357 T-39-13 SYMBOL PARAMETER , transistor BUZ357 T-39-13 140 w 120 100 80 60 40 20 0 , Manufacturer N AI1ER PHILIPS/DISCRETE PowerMOS transistor □ LE D fc,b53^31 0014047 7 BUZ357 T-39-13 , PowerMOS transistor "- BUZ3S7 — T-39-13 S L


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PDF BUZ357^ T0218AA; bbSBT31 BUZ357 T-39-13 buz357 Transistor 5331 MC 140 transistor
Not Available

Abstract: No abstract text available
Text: ObE D ■bfc.S3T31 0D147SS 4 BUZ54A ™ T-39-13 RATINGS Limiting values in , BUZ54A T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C unless otherwise specified , “ ■(^53131 001^727 f l BUZ54A T-39-13 Fig. 3 Fig.4 Typical output , /DISCRETE PowerMOS transistor DtE D ■LhSBTBl 0014726 T H BUZ54A “ T-39-13 w 0 , PHILIPS/DISCRETE PowerMOS transistor • DL.E D ■bbS3T31 0D1472T 1 ■BUZ54A T-39-13


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PDF 00147BH BUZ54A T-39-13 bbS3T31 0D1472T bb53131
buz350

Abstract: No abstract text available
Text: – bb53T31 0Q147S3 T ■BUZ350 ~ T-39-13 I I UNIT V V V A A A W °C TYP. 3,0 20 , FowerMOS transistor — ■^^53=131 D014754 □ ■BUZ350 ~* T-39-13 REVERSE DIODE , ObE D ■BUZ350 (^53131 0D14755 2 ™ T-39-13 Fig.3 Typical output characteristics , T-39-13 N AMER PHILIPS/DISCRETE PowerMOS transistor - OLE D ■bbS3^31 0014757 b ■BUZ350 ' T-39-13 443 N AMER PHILIPS/PISCRETE OLE D PowerMOS transistor ■bbSSTBl


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PDF fabS3131 T0218AA; 001475L BUZ350 T-39-13 00147SS buz350
IRFM040

Abstract: G-641 G640 transistor 4 pin TRANSISTOR G639 100-C Diode Gfg 45 G641
Text: GOCHb^ 1 | IRFM040 Device T-39-13 Absolute Maximum Ratings Rarameter IRFM040 Units Iq @ TC = , | IRFM040 Device T-39-13 Source-Drain Diode Ratings and Characteristics Parameter Min. Typ. Max. Units , .5 S | IRFM040 Device T-39-13 z 111 tr Ö.0 0.5 1.0 1.5 2.0 a.5 VDS, DRAIN-TO-SOURCE VOLTAGE , -642 INTERNATIONAL RECTIFIER HE D J 4fl5S455 GOGñt.fe.b 7 | IRFM040 Device T-39-13 25 20 IRFM040 Device T-39-13 5000 4000 OV, f = 1MHz cgs + cgd- cds


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PDF 4A55M52 IRFM040 G-644 IRFM040 T-39-13 G-645 G-646 G-641 G640 transistor 4 pin TRANSISTOR G639 100-C Diode Gfg 45 G641
BUZ356

Abstract: No abstract text available
Text: PowerMOS transistor — ■bbSBTBl 0D14fi23 4 BUZ356 “* T-39-13 RATINGS Limiting , 0014325 f ■l m BUZ356 T-39-13 Fig. 2 — - TC Po wer dissipation Pd = f(T m f,). Fig , BUZ356 T-39-13 512 N ANER P H I L I P S / D I S C R E T E PowerMOS transistor - ~ ObE D _ ■tbS3T31 0014537 1 ■B U Z J55 ■T-39-13 513 ObE D N AUER P H I L I P S / D I S C R E T E PowerMOS transistor ■bb53c 131 0014626 3 BUZ356 T-39-13


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PDF bbS3T31 BUZ356 T0218AA; 0D14flEb T-39-13 tbS3T31 bb53c BUZ356
Not Available

Abstract: No abstract text available
Text: ■bbSB^ai 00147T5 3 BUZ385 T-39-13 RATINGS Limiting values in accordance with the , – BUZ38S T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C unless otheiwise specified , oomTTT BUZ385 T-39-13 485 o N AMER PHI LI PS/ DI SCRETE QbE D PowerMOS transistor , m bbS3TBi oumi'n i > N AMER PHI LI PS/ DI SCR ET E PowerMOS transistor BU Z385 T - 39-13 , b b 5 3 c]31 0 0 1 4 7 ^ 6 1 BUZ385 T - 39-13 0 Fig. 7 Tjznx,iz&ax -cijsrwwsjKGSSSO


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PDF tbS3T31 00147T4 Fig25Â BUZ385 T-39-13 bb53TBl
siemens 230 98 O

Abstract: siemens 230 siemens EC 230 98 siemens 230 98 a1105 T-39-13
Text: SIEMENS AKTIEN6ESELLSCHAF T-39-13 Electrical Characteristics at T| = 25 °C, unless otherwise specified , dissipation Ptot = f(Tc) T-39-13 TVp, output characteristics I0 = f(V0S) parameter; tp = 80 us W 120 100 , 1059 fl23Sfc,05 OÜSITST M ■SIEG BUZ 230 T-39-13 M7E D I SIEMENS AKTIENGESELLSCHAF Typ , |=25°C (98%)- 7p150°C (98%) 0 0.4 0.8 1.2 1.6 2.0 2.4 V -^SD BUZ 230 T-39-13 Drain current I0 = f , SIEG BUZ 230 T-39-13 TVp. gate charge VQS = f(Qaaie) parameter: I0 puts = 8.0 A SIL00742


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PDF E35b05 O-204AA C67078-A1105-A2 T-39-13 siujq740 Q0217bl SIL00742 siemens 230 98 O siemens 230 siemens EC 230 98 siemens 230 98 a1105 T-39-13
BUZ24

Abstract: No abstract text available
Text: \ N Af1ER PHILIPS/DISCRETE ObE D bbS^Bl BUZ24 PowerMOS transistor ODmSTl 3 ■T-39-13 , transistor BUZ24 T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C unless otherwise , BUZ24 PowerMOS transistor nr^rTER^PHILTpS/DISCRETE OLE D ■^ 5 3 ^ 3 1 OOlMbOl A T-39-13 , N AUER PHILIPS/DISCRETE _ BUZ24 Qb~ D ■_ bbS3T31 Q014bD2 T ■t T-39-13 k , _ BUZ24_ ■bbSBTBl 0D14b03 1 ■[ T-39-13 . 289 PowerMOS


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PDF bb53c BUZ24 bbS3T31 Q014bD2 T-39-13 BUZ24_ 0D14b03 BUZ24
Not Available

Abstract: No abstract text available
Text: s is to r DbE D : ■bbSBTBl O Q m T B T 4 BUZ348 _ ~ T-39-13 RATINGS Limiting , 001474D 0 BUZ348 Pow erM O S tra n sisto r T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb , €” T-39-13 Fig.3 Typical output characteristics I q =f(V£)s) Parameter: Vq s >80 ps pulse test , □□ 1 4 7 4 2 4 BUZ348 P o w e rM O S tra n sisto r T-39-13 -4 0 0 40 80 120 , OD14743 L BUZ348 T-39-13 429 N AMER PHI LIP S/ DI SCR ET E ObE D ■^53131 0014744


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PDF BUZ348 TQ218AA; T-39-13 LLS3T31 OD14743
buz349

Abstract: No abstract text available
Text: FowerMUS transistor ^ ■bbSBTBl 00147Mb 1 BUZ349 T-39-13 RATINGS Limiting values in , T E PowerMos transisfor 7 " ObE D — ■BUZJ49 bbS3T31 Q014747 3 ■T-39-13 , ANER PHILIPS / D I S CR E T E PowerMOS transistor b b S a ^ l 0014743 S BUZ349 T-39-13 Fig , O O m ? ^ T-39-13 Tj(°C) Fig. 7 Drain-source on-state resistance r DS(ON) =f(Tj , ■fc,b53131 D0147SQ 3 U U ZiW T-39-13 436 ObE D N AMER PHILIPS / D I S CR E T E


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PDF bb53T31 BUZ349 TQ218AA; bbS3131 T-39-13 b53131 D0147SQ buz349
Not Available

Abstract: No abstract text available
Text: H E 0 I MÖSS4SE INTERNATIONAL ÜGDÖ74S 3 | Data Sheet No. PD-9.588A T-39-13 , Devices 4555452 0000743 5 I ■INTERNATIONAL RECTIFIER T-39-13 Absolute Maximum , 4 Ö5 5 4 5 2 INTERNATIONAL DQQÔ744 IRFP244, IRFP245 Devices 7 | RECTIFIER T-39-13 , ) PEH T-39-13 Fig. 4 — Maximum Safe Operating Area THERMAL RESPONSE (Z,.hj C) Fig. 3 , aOGfl?4t 0 | IRFP244, IRFP245 Devices INTERNATIONAL r e c t i f i e r T-39-13 z < K


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PDF T-39-13 IRFP244 IRFP245 O-247AC C-497 IRFP244, IRFP245 C-498
Not Available

Abstract: No abstract text available
Text: *î I IRF440, IRF441, IRF442, IRF443 Devices ‘ I N T E RNATIONAl, RECTIFIER T-39-13 , Devices INTERNATIONAL RECTIFIER ‘ T-39-13 Source-Drain Diode Ratings and Characteristics , | INTERNATIONAL RECTIFIER i d. drain current ( mperes) a T-39-13 t VDg, DRAIN-TO-SOURCE VOLTAGE , ONAL RE CT IF IER T-39-13 ID. DRAIN CURRENT (AMPERES) Flg. 6 — Typlcal Transconductance Vs , , IRF441, IRF442, IRF443 Devices INTERNATIONAL RECTIFIER ' T-39-13 Fig. 10 — Typical


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PDF M5SS45S IRF44Q IRF441 IRF442 IRF443 O-204Ã T-39-13 G-166
IRF G40

Abstract: G37 IRF IRF1401 IRF142 IRF141 IRF143 IRF140 IOR IRF140 IRF140 ir irf 044 mosfet
Text: Dissipation Linear Derating Factor VGS eas * T-39-13 IRF140, IRF141 28 20 110 150 1.2 ±20 100 (See Fig , 4055455 GOOTGbO 4 | IRF140, IRF141, IRF142, IRF143 Devices T-39-13 INTERNATI ON AL RECTIFIER , b I IRF140, IRF141, IRF142, IRF143 Devices " INTERNATIONAL RECTIFIER T-39-13 QOpS PUL SE 1 , -38 11E D^jjj 4 0 5 5 4 5 5 GGQTQti5 fl IRF140, IRF141, IRF142, IRF143 Devices T-39-13 , , IRF142, IRF143 Devices H E D I 4855452 000^01,3 0 | INTERNATIONAL RECTIFIER T-39-13


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PDF 5S455 00QTQ5Ô O-204AE IRF140, IRF141, IRF142, IRF143 S54S2 T-39-13 IRF G40 G37 IRF IRF1401 IRF142 IRF141 IRF140 IOR IRF140 IRF140 ir irf 044 mosfet
BUZ211

Abstract: T-39-13 IEC134 T2113
Text: accordance with the Absolute Maximum System (IEC134) T-39-13 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vds , 150°C - 15 - A 356 PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ211 QbE D bfa53«131 aomfc.71 7 T-39-13 , /DISCRETE ObE 3T31_Q01Mt.7 T-39-13 Fig. 6 Typical drain-source on-state resistance rDS(ON) = f(ID) Parameter , ¡D ~ 1mA- 358 PowerMOS transistor_BUZ211 N AMER PHILIPS/DISCRETE ObE 1> m ^53131 00141,73 0 T-39-13 , D BUZ211 ^£3=131 0014b74 2 T-39-13 Fig.13 Transient thermal impedance Ztf, f.mj, = f(t) Parameter


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PDF BUZ211 0014bbà T-21-13 BUZ211 0014b74 T-39-13 IEC134 T2113
IRF 244 MOSFET

Abstract: FOR G-243 G-243 International Rectifier MOSFET 443 irfae52 LF 71A diode LF 71A
Text: llE ° I MaSSM5a a00^t2 5 I Data Sheet No. PD-9.574A INTERNATIONAL RECTIFIER T-39-13 INTERNATIONAL , INTERNATIONAL RECTIFIER Absolute Maximum Ratings T-39-13 fórameter IRRAE50 IRFÄE52 Units ID @ TC = 25 , -241 IRFAE50, IRFAE52 Devices HE 0 | MflS5452 QQO^atS a | internatiqnal^rectifier T-39-13 10 tr UJ a < u z m , RECTIFIER IRFAE50, IRFAE52 Devices T-39-13 15 tn g 12 UJ u z < 3 a z o u in z < Œ vDS > 100V BOus PULSE , 10000 UE D I 4055452 OOO^Sb? M | INTERNATIONAL RECTIFIER T-39-13 1 2 5 io 2 5 io2 VDS, DRAIN-TO-SOURCE


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PDF T-39-13 O-204AA G-245 IRFAE50, IRFAE52 G-246 IRF 244 MOSFET FOR G-243 G-243 International Rectifier MOSFET 443 LF 71A diode LF 71A
BUZ64

Abstract: MC 331 transistor transistor d 331
Text: 0G14b41 1 T-39-13 RATINGS SYMBOL PARAMETER VDS VdGR ±vgs id id 1dm Ptot Tstg 3_ Drain-source , RATINGS AND CHARACTERISTICS Tmb = 25 °C unless otherwise specified « T-39-13 SYMBOL PARAMETER , \ \ \ 3 50 100 °C 150 ■- T0 "g.2 Power dissipation Pp = f(Tmi,). ¡0 25 T-39-13 , Respective Manufacturer PowerMOS transistor BUZ64 N AMER PHILIPS/DISCRETE ObE D ^1.53131 0D14t>M4 M T-39-13 , _BUZ64_ N AMER PHILIPS/DISCRETE ObE D ■bb53T31 DDmt.45 ■«■■^■■■■■MHM T-39-13 M Fig


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PDF BUZ64 bb53T31 T-39-13 T-39-13 BUZ64 MC 331 transistor transistor d 331
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