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104-PR-8A E-T-A CIRCUIT BREAKER HORZ PCB 8A
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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
DAT-33-292-1 Brady Worldwide Inc Farnell element14 - £87.55 £87.55
DAT-33-292-1 Brady Worldwide Inc Allied Electronics & Automation - $54.49 $54.49
DAT-33-292-1 Brady Worldwide Inc Master Electronics 4 $55.60 $53.40
DAT-33-292-1 Brady Worldwide Inc Future Electronics - $44.43 $38.89
DAT-33-292-10 Brady Worldwide Inc Bisco Industries 1 - -
DAT-33-292-10 Brady Worldwide Inc Allied Electronics & Automation - $382.49 $382.49
MIL-LT-3/32-9-SP-CS7223 TE Connectivity Ltd Sager - - -
MIL-LT-3/32-9-SP-CS7312 TE Connectivity Ltd Sager - - -
MIL-LT-3/32-9-STK Littelfuse Inc Chip1Stop 100 $0.51 $0.51
MIL-LT-3/32-9-STK TE Connectivity Ltd Master Electronics 199 $0.31 $0.16
MIL-LT-3/32-9-STK TE Connectivity Ltd Sager - - -
MIL-LT-3/32-9-STK-CS7227 TE Connectivity Ltd Sager - - -
RM12FT3329F SEI Stackpole Electronics Inc Bristol Electronics 5,000 - -
T 3329 501 Amphenol Corporation Avnet - $4.39 $3.79
T 3329 501 Amphenol Sine Systems Allied Electronics & Automation - $5.28 $5.28
T 3329 502 Amphenol Sine Systems Heilind Electronics - - -
T 3329 502 Amphenol Sine Systems Heilind Electronics - Asia - - -
T 3329 502 Amphenol Sine Systems Interstate Connecting Components - - -
T 3329 502 Amphenol Corporation Avnet - $5.59 $4.69
T 3329 502 Amphenol Corporation Avnet - €6.59 €5.49
T 3329 502 U Amphenol Sine Systems Heilind Electronics - Europe - - -
T 3329 504 Amphenol Sine Systems Interstate Connecting Components - - -
T 3329 504 Amphenol Sine Systems Heilind Electronics - Asia - - -
T 3329 504 Amphenol Sine Systems Heilind Electronics - - -
T 3329 504 U Amphenol Sine Systems Heilind Electronics - Europe - - -
T 3329 518 Amphenol Sine Systems Heilind Electronics - - -
T 3329 518 Amphenol Sine Systems Heilind Electronics - Asia - - -
T 3329 518 Amphenol Sine Systems Interstate Connecting Components - - -
T 3329 528 Amphenol Sine Systems Heilind Electronics - Asia - - -
T 3329 548 Amphenol Sine Systems Interstate Connecting Components - - -
T 3329 548 Amphenol Sine Systems Heilind Electronics - Asia - - -
T 3329 548 Amphenol Sine Systems Heilind Electronics - - -
T 3329 548 U Amphenol Sine Systems Heilind Electronics - Europe - - -
T 3329 551 Amphenol Sine Systems Heilind Electronics - Asia - - -
T 3329 551 Amphenol Corporation Avnet - $4.59 $3.89
T 3329 551 Amphenol Sine Systems Interstate Connecting Components - - -
T 3329 551 Amphenol Sine Systems Heilind Electronics - - -
T 3329 551 U Amphenol Sine Systems Heilind Electronics - Europe - - -
T 3329 552 Amphenol Corporation Avnet - $5.79 $4.99
T 3329 552 Amphenol Corporation Avnet - €6.89 €5.69
T 3329 552 Amphenol Sine Systems Heilind Electronics - Europe - - -
T 3329 554 U Amphenol Sine Systems Heilind Electronics - Europe - - -
VERSAFIT-3/32-9-SP TE Connectivity Ltd Master Electronics 1,642 $0.21 $0.10
VERSAFIT-3/32-9-SP TE Connectivity Ltd Powell Electronics 5,936 $0.14 $0.09
VERSAFIT-3/32-9-SP TE Connectivity Ltd Newark element14 5,904 $0.14 $0.14
VERSAFIT-3/32-9-SP-CS5438 TE Connectivity Ltd Sager - $0.18 $0.12
VERSAFIT-3/32-9-SP-CS7 TE Connectivity Ltd Heilind Electronics - - -
VERSAFIT-3/32-9-SP-CS7 TE Connectivity Ltd Interstate Connecting Components - - -
VERSAFIT-3/32-9-SP-CS7532 TE Connectivity Ltd Sager - $0.18 $0.12

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T-33-29 datasheet (4)

Part Manufacturer Description Type PDF
T3329501 Amphenol Circular Connectors, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN Original PDF
T3329502 Amphenol Circular Connectors, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN Original PDF
T3329551 Amphenol Circular Connectors - Housings, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN CRIMP Original PDF
T3329552 Amphenol Circular Connectors - Housings, Connectors, Interconnects, CONN PLUG 4POS CABLE PIN CRIMP Original PDF

T-33-29 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2000 - T 3379 552

Abstract: No abstract text available
Text: DIN T 3279 502 T 3279 528 4) T 3279 552 4 IEC T 3329 502 T 3329 528 4) T 3329 , 3649 528 4) – 3 DIN T 3279 504 4) T 3279 548 4) T 3279 554 4) 4 IEC T 3329 504 4) T 3329 548 4) T 3329 554 4) 5 T 3379 504 4) T 3379 548 4) T 3379 554 4 , 2) T 3329 551 4) 7 1) T 3329 518 4) 6 DIN Male cable connector, max. cable outlet 6.5 mm, termination: solder or crimp, contact plating: silver or gold. T 3279 551 T 3329


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PDF
b0335

Abstract: B0337 b0333 OF IC 337 transistor 337 b0332 D 337 TRANSISTOR ICM 72131 BD335 tr 337
Text: 0D45aft7 171 MPHIN T-33-29 < j_ R1 R2 izwlü! Ri typ. 4 ki2 R2 typ. 100 fi _I Fig. 2 Circuit , otherwise specified SLE D BD331; 333 BD335; 337 ?iioaEL oo4Eflaa OOA mphin T-33-29 IE = VCB = vCBOmax , Manufacturer BD331; 333 T-33-29 BD335; 337 PHILIPS INTERNATIONAL SbE T> ■711D0Sb OOMBaaq TM4 7277489 5 T-33-29 , transistors J V. BD331; 333 BD335; 337 PHILIPS INTERNATIONAL SbE D m 711005b OQi+SßTG 7bb T-33-29 , SbE D 10' My 10 T-33-29 711002b ÜGMSÖTl bT5 HIPHIN ?z72225 - — - S B voltage


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PDF BD331; BD335; OT-82 BD332, BD334, BD336 BD338. BD331 b0335 B0337 b0333 OF IC 337 transistor 337 b0332 D 337 TRANSISTOR ICM 72131 BD335 tr 337
PHILIPS BDX65

Abstract: transistors ai 757 BDX65 PHILIPS BDX64 BDX64* darlington BDX65B 1981-R darlington transistor C 3300 BDX65C BDX64C
Text: /DISCRETE BDX65; 65A BDX65B; 65C 1/X.à V.ÎV Jl 2SE D bbS3T31 0011170 3 T-33-29 R1 typ. 5 kfì R2 , Turn-off time T-33-29 VF typ. 1,2 V ton typ. t0ff typ. 1 /us 6 us 90% ■B 10% 90% Fig. 3 , ; 65C I j ai A T-33-29 5mH vert, oscilloscope 0,1 il —I T.U.T. vcc7F hor. oscilloscope Fig , BDX65B; 65C J I T-33-29 " 'cMn lav 5 =o,c A )1 , DJJ 13 Jl T-33-29 7Z67930.1 Fig. 9 Safe Operating ARea at Tmb < 25 °C. I Region of permissible


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PDF BDX65; BDX65B; T-33-2? BDX64, BDX64A, BDX64B BDX64C. BDX65 PHILIPS BDX65 transistors ai 757 PHILIPS BDX64 BDX64* darlington BDX65B 1981-R darlington transistor C 3300 BDX65C BDX64C
Not Available

Abstract: No abstract text available
Text: packaging available (see page 61 for details) M odel 3329 /RJ50/RJR50 79® Trimming Potentiometer , ±100ppm/°C Seal Test. 85°C Fluorinert* Fiumidity (Commercial Model) 3329 , .(1 % ATR, 100 Megohms IR) Vibi ation 3329 . 30G (1 % ATR; 1%AVR) ft. 50 , . 200 cycles 3329 .(4% ATR; 4% CRV) R.50/RJR50 , . 5.0 oz-in. max. Stop Strength. 5.0 oz -in. min. Terminals 3329


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PDF MIL-R-22097 RJR50 MIL-R-39035 3329/RJ50/RJR50 3329H RJ/RJR50 3329P-DK9-RC)
3329/03

Abstract: burr-brown 3329/03 3329 power booster circuit diagram 3329/03 / IC Burr-Brown IC 3329/03
Text: BURR-BROWN® 3329 /03 HYBRID IC POWER BOOSTER FEATURES • ±100mA OUTPUT • SHORT CIRCUIT PROTECTED • NO HEAT SINK REQUIRED • DUAL-IN-LINE PACKAGE DESCRIPTION The Model 3329 /03 is a power , .300" (7.62) Pin Spacing 0.1 (2.5mm) APPLICATIONS Power Supply Requirements The Model 3329 /03 is , the 3329 /03 is approximately 1.0. The accuracy of this gain is relatively unimportant, since the , stable under all conditions of capacitive loading. Because of it's very low output impedance, the 3329 /03


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PDF 100mA 10VDC 3329/03 burr-brown 3329/03 3329 power booster circuit diagram 3329/03 / IC Burr-Brown IC 3329/03
BU724A

Abstract: No abstract text available
Text: fafaS3*131 QDlflbSD a 2SE D N AMER PHIL IPS/ DISC RE TE BU724 BU724A T-33-29 RATINGS , BU724A Silicon diffused power transistors T-33-29 CHARACTERISTICS Tj = 25 °C unless otherwise , / DISC RE TE 2SE D bb53*m BU724 BU724A QQlflbSS T-33-29 (1) For adjustment o f lg = 1 , BU724 BU724A T-33-29 3 Q IZ Ul 5 a. O -I UJ 6 a I Region o f permissible DC , T-33-29 r N AMER PH ILI PS/ DI SC R ETE ESE D bbS3T31 Q01fifeiS5 7 ■BU724 BU724A


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PDF bbS3T31 BU724 BU724A T-33-29 Q01fifeiS5 BU724A
BDX67

Abstract: transistor bdx67 BDX66B BDX66A BDX66 BDX67B BDX66B TRANSISTOR BDX66B BDX66A TO3 philips PHILIPS 1980 darlington power transistor 10a
Text: Dômifi 1 BDX67; 67A 11 BDX67B; 67C II J V_ T-33-29 c RI typ. 3 ki2 R2 typ. 80 fi Fig. 2 Circuit , lF = 10 A IJi UUJil I BC |bc T-33-29 •cbo < 1 mA 'cbo < 5 mA 'ceo < 1 mA >ebo < 5 mA hfe , ; turn-on time turn-off time T-33-29 lon typ. 1 us t0ff tYP- 3,5 ¡is 7Z77499.S 90% >B 10%- 90 , ) ESE D ■b 1353131 0Q5Q0Q1 3 ■BDX67; 67A BDX67B; 67C 313JI I Jl T-33-29 TIM 0—I ru 5mH , Q02DQQ2 5 T-33-29 ioa (A) 1Q to -1 10 -2 CMmax Cmax 6 = :d) à io 0,01 N ii 5 i 0,5


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PDF BDX67; BDX67B; T-33-H? BDX66, BDX66A, BDX66B BDX66C. BDX67 transistor bdx67 BDX66B BDX66A BDX66 BDX67B BDX66B TRANSISTOR BDX66A TO3 philips PHILIPS 1980 darlington power transistor 10a
AUR aktiv

Abstract: 4xAWG24 MTA-100 7 pin female connector mta soldering pressure sensor for hydraulics ISO-228 14532 MTA-100 MTA100 ISO228
Text: : Fax: e-mail: Internet: +49 (0) 3329 / 6068 -16/-17/-30 +49 (0) 3329 / 6068 -15 , Ruhlsdorfer Str. 95, Geb.4 D-14532 Stahnsdorf Phone: Fax: e-mail: Internet: +49 (0) 3329 / 6068 -16/-17/-30 +49 (0) 3329 / 6068 -15 info@aktiv-sensor.de http://www.aktiv-sensor.de CAU-T precision , ] +49 (0) 3329 / 6068 -16/-17/-30 +49 (0) 3329 / 6068 -15 info@aktiv-sensor.de http , , Geb.4 D-14532 Stahnsdorf Phone: Fax: e-mail: Internet: +49 (0) 3329 / 6068 -16/-17/-30 +49


Original
PDF D-14532 AUR aktiv 4xAWG24 MTA-100 7 pin female connector mta soldering pressure sensor for hydraulics ISO-228 14532 MTA-100 MTA100 ISO228
automotive ignition tip162

Abstract: tipi transistor equivalent 369-41 equivalent to tip162 369-42 tektronix p6019 TIP160 P6020 P6019 TIP162
Text: High-Voltage, High-Forward and Reverse Energy Designed for Automotive Ignition Applications T-33-29 device , ) 62C 36939 D f ' T-33-29 ■s TIPI 60, TIPI 61, TIPI 62 N-P-N DARLINGTON-CONNECTED SILICON POWER , POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION T-33-29 VBB1 «31 V ADJUST FOR Von = 29VAT INPUT , TRANSISTORS T-33-29 PARAMETER MEASUREMENT INFORMATION J-^J^ VCE MONITOR IC MONITOR -T TEST CIRCUIT , SILICON POWER TRANSISTORS FUNCTIONAL TEST INFORMATION T-33-29 TEST CIRCUIT INPUT VOLTAGE VCE -16.6


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PDF T-33-29 218AA TIP160 TIP161 TIP162 TIP160, TIP161, TIP162 automotive ignition tip162 tipi transistor equivalent 369-41 equivalent to tip162 369-42 tektronix p6019 P6020 P6019
BD646F

Abstract: BD649F BD650F BD643F BD648F BD652F 651F
Text: . TLc IPHIN T-33-29 L. R1 R2 R1 typ. 4kfi R2 typ. 100kfi _I Fig. 2 Darlington circuit diagram , T-33-29 ~~~ 0.1 mA max. 1 mA max. 0.2 mA max. 5 mA BD643F 645F 647F 649 F 651F , INTERNATIONAL v|m-0 SbE D [L-c! 711005b □Q4HC13C) 3TT »PHIN T-33-29 V|M = 12V RB = 270 fi L =5 mH 'CC = , This Material Copyrighted By Its Respective Manufacturer Silicon Darlington power transistors T-33-29 , SbE D ■711Gfi5b □□42141 T5Ö «PHIN 7Z8101B ! T-33-29 100 „ „„ 150 tmb l°c> Fig. 7


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PDF BD643F BD649F: 65-1F_ 711002b OT186 areBD644F, BD646F, BD648F, BD650F BD652F. BD646F BD649F BD648F BD652F 651F
BU724A

Abstract: BU724 BC107 Characteristic curve BC107 OA-28 OA28
Text: BU724A 2se d bbSH^i QGiatso a T-33-29 ratings Limiting values in accordance with the Absolute , mA;Tmb=100°C vBEsat 'cp JL T-33-29 VCE=VCESM max.'VBE = 0.3 V 'CES max. 0.1 mA VCE = VcES max , BU724 BU724A ESE D bb53^31 OQlflbSS 1 T-33-29 + 8V JUL BIO Si BC107 r&r<) 120 pF 220 -VEe {1 , 5SE D ■bb53131 0Q10b53 3 BU 724 BU724A T-33-29 § Q I-Z lu S a. O -i uj S a VCE IV) I , 724 BU724A 10" 102 2SE D ■bbS3131 OOiatSM S I T-33-29 10 1 1 /Al 10 Fig. 6 Typical DC


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PDF BU724 BU724A bbS3131 T-33-29 BU724A BC107 Characteristic curve BC107 OA-28 OA28
TIP662

Abstract: P6019 TIP660 TIP661 tektronix p6019 1N914 2N6127 524I transistor tip662
Text: device schematic 80Wat 100° C Case Temperature T-33-29 10 A Rated Continuous Collector Current MAX , , TIP661, TIP662 T-33-29 N-P-N DARLINGTON-CONNECTED . SILICON POWER TRANSISTORS electrical , POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION -M- 1N914 H—N—K- INPUT MONITOR T-33-29 , 62c 36985 T-33-29 7 FUNCTIONAL TEST INFORMATION j-^^ VCE MONITOR INPUT BOO (oj-VW lC , TRANSISTORS FUNCTIONAL TEST INFORMATION T-33-29 24 V Set damp for I CM - 7 m A TEST CIRCUIT INPUT


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PDF 0PT03- 0Tbl72b TIP660, TIP661, TIP662 80Wat T-33-29 TIP660 TIP661 P6019 tektronix p6019 1N914 2N6127 524I transistor tip662
transistor 31104

Abstract: TIPL775 TIPL775A 2j50
Text: 1984 T-33-29 . 7 device schematic Specifically Designed For Low-Loss, High-Current, High-Speed , , TIPL775A N-P-N MONOLITHIC DARLINGTON-CONNECTED SILICON POWER TRANSISTORS 62C 37100 ^ T-33-29 ~ . , switching characteristics T-33-29 PARAMETER TEST CONDITIONS TIPL775 TIPL775A UNIT MIN TYP MAX MIN .-TYP , DARLINGTON-CONNECTED SILICON POWER TRANSISTORS 62 C 37102 ^ T-33-29 ä I 0.4 0.1 TYPICAL CHARACTERISTICS , TC = 25°C 1 1 T-33-29 STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 10 k


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PDF -C0PT03- 37Dcn TIPL775, TIPL775A T-33-29 TIPL775 TIPL775A TIPL77S DDB71DM transistor 31104 TIPL775 2j50
FE10E

Abstract: 8d679 BD676 BD680 BD675 BD678 BD679 BD682 BD684
Text: D ■711062b 0042^3 bll BIPHIN T-33-29 r' R1 -1—c f r Î k 1 Ri typ. 3 kii ' R2 typ , Collector cut-off current ■711Gê2b 0042TbM SSS ■PHIN for BD675 read lc = 2 A. T-33-29 IE =°; VCB , INTERNATIONAL CHARACTERISTICS (continued) 5bE D MM 0—1 ru T-33-29 711Dfl2b QQMSTbS MTl MPHI^ Vim- 12 V , BD679; 681 683 J PHILIPS INTERNATIONAL 4 T-33-29 ShE » ■711Q05tj DDMSTb? 2b4 -th J-mb (K/W) 3 , transistors Jl PHILIPS INTERNATIONAL io2 T-33-29 BD675; 677 _ J^ BD679; 681; 683 5bE D ■711Gfl2b


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PDF BD675; BD679; 711005b OT-32 BD676, BD678, BD680, BD682 BD684. BD675 FE10E 8d679 BD676 BD680 BD678 BD679 BD684
TIP642

Abstract: TIP641 TIP640 tlp641 lN914 TIP645 TIP646 TIP647 TIP64 TIP-640
Text: Rated Collector Current MinhFEof 1000 at 4 V, 5 A 100 mJ Reverse Energy Rating TO-3 PACKAGE T-33-29 , Notes 5 and 6 3.5 3.5 3.5 v 62c 36971 d T-33-29 NOTES: 5. These parameters iriust be measured using , , TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION T-33-29 , (OPTO) 62c 36973 TIP640, TIP641, TIP642 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS T-33-29 , TRANSISTORS D TYPICAL CHARACTERISTICS T-33-29 STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT


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PDF TIP640, TIP641, TIP642 TIP645, TIP646, TIP647 T-33-29 TIP640 TIP641 TIP642 tlp641 lN914 TIP645 TIP646 TIP64 TIP-640
WF VQE 13

Abstract: BDX63B wf vqe 14 e BDX63 WF VQE 11 E WF vqe 13 D BDX62 Wf vqe 14 WF VQE 12 wf vqe 13 E
Text: ; 63A BDX63B; 63C S5E D bbss^i aamsa a T-33-29 r" i_ R1 R2 O- _i R1 typ. 8 kil R2 typ , power transistors S5E D ■^53=131 Gomsi T ■BDX63; 63A BDX63B; 63C - T-33-29 characteristics , times (between 10% and 90% levels) 'Con = 3 'Bon = "Wf = 12 mA turn-on time turn-off time T-33-29 ton , OOniLl fi ■BDX63; 63A BDX63B;63C 3 il I Diode, forward voltage lp = 3 A T-33-29 VF typ. 1,2 V IM , ;63C T-33-29 A 7Z67327.1 'CMn tax 5 = 0,01


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PDF BDX63; BDX63B; BDX62, BDX62A, BDX62B BDX62C. BDX63 bfaS313L WF VQE 13 BDX63B wf vqe 14 e WF VQE 11 E WF vqe 13 D BDX62 Wf vqe 14 WF VQE 12 wf vqe 13 E
TIPL773

Abstract: B 773 transistor TIPL773A
Text: lê 1 W 7 2 b C D 37D 78 D f ~ 8961726 TEXAS IN S T R (O P T O ) 62C 37078 T-33-29 , 0.1 MHz 185 PF See Notes 3 and 4 2 2.2 2 .5 2.5 3 3.5 4 4 2 V T-33-29 TIPL773A TYP MAX UNIT V V MA , ) 62C 37080 T-33-29 TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER DARLINGTON electrical , -COPTO} t.5 DE | flìtilTEL 00370A1 0 ^ T-33-29 8961726 TEXAS IN S T R (O P T O , 1 |~ 8961726 TEXAS IN S T R COPTO) 62C 3 7 0 8 2 * Z "' T-33-29 _D_ TIPL773


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PDF TIPL773, TIPL773A, TIPL773B TIPL773 T-33-29 B 773 transistor TIPL773A
Transistor 337

Abstract: BD335 c 337 25 BD337 IM 337 BD331 12 v transistors 337 BD334 OF IC 337 T3329
Text: INTERNATIONAL n L. SbE D i 7110flEb 0042887 171 MPHIN T-33-29 H-. < R1 R2 R-| typ. 4kß R2 typ. 100 Sl , SbE 1> 90% 10% 90% 10% I 711062b QQMBaaq m iphin 7277499 5 T-33-29 un u 'Bon Boff 'Con - , ; 333 BD335; 337 PHILIPS INTERNATIONAL sbE D ■7iiofl2b ocmsaTG ?bb T-33-29 IPHIN , ) Second-breakdown limits. July 1988 177 BD331; 333 BD335; 337 PHILIPS INTERNATIONAL 5bE P 10' My 10 T-33-29 , Silicon Darlington power transistors T-33-29 PHILIPS INTERNATIONAL 10 , BD331; 333 J ^_ BD335; 337


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PDF BD331; BD335; OT-82 BD332, BD334, BD336 BD338. BD331 Transistor 337 BD335 c 337 25 BD337 IM 337 12 v transistors 337 BD334 OF IC 337 T3329
BDX63

Abstract: No abstract text available
Text: – Lh53T31 Q D m S f l a . T-33-29 R1 typ. 8 kSl R2 typ. 1 0 0 fi Fig. 2 Circuit diagram. R A T , BDX63; 63A BDX63B; 63C T-33-29 C H A R A C T E R IS T IC S (continued) Switching times (between 10 , ; 63C silicon uarimgton power transistors T-33-29 Diode, forward voltage Ip = 3 A Vp typ , 1 10 102 . T-33-29 V C E (V ) Fig. 8 Safe Operating ARea, T mb < 25 °C. I II (1 , power transistors • 1 10 102 T-33-29 V C E (V ) Fig, 9 Safe Operating ARea, T mb


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PDF 0D111S7 BDX63; BDX63B; BDX62, BDX62C. T-33-29 bbS3T31 BDX63
lg bd645

Abstract: BD649 philips darlington bd 645 bd649 PNP transistor BD649 BD645 B0645 BD643 BD646 BD647
Text: ; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL n L. SbE D R1 711DÖ2b ODMSIS? bflâ MPHIN T-33-29 , 0042^20 514 ■PHIN T-33-29 max. 0.1 mA 'CBO 'ceo >EBO hFE hFE hFE VßE vCEsat vCEsat vBEsat , SbE T> 711Dfl5b DDMSTSI MSD »¡PHIN ton toff T-33-29 typ. 1.0 MS max. 2.0 H3 typ- 5.0 lis max , – PHIN 7ZS2093.1 _ T-33-29 Fig. 6 BD643; BD645 Safe Operating Area, Tmb = 25 °C. I , 7iioasb ocmsiai □□«=] biphin T-33-29 Fig. 7 BD647, BD649, BD651 Safe Operating Area, Tmb = 25 °C


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PDF BD643; BD645; BD647; BD649; BD651 7110fl2b T0-220 BD644, BD646, BD648, lg bd645 BD649 philips darlington bd 645 bd649 PNP transistor BD649 BD645 B0645 BD643 BD646 BD647
Not Available

Abstract: No abstract text available
Text: Reserved Locations . 3-329 3.3 Interrupts. 3-329 3.4 Shutdown and Malt . 3-329 3.5 LOCK Operations. 3-329 4.0 PROTECTED MODE ARCHITECTURE .3-330 4.1 Addressing M echanism


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PDF Intel386TM 386TM l386TM
J50 O 26

Abstract: RJr50 tic 260
Text: part numbers_ Model 3329 /FtJ50/RJR50 Trimming Potentiometer E le c tric , Model) 3329 .MIL-STD-202 M ethod 106 96 hours (3% ATR, 10 M egohm s IR) R J5 0 .(1% ATR, 10 M egohm s IR) R J R 5 0 .(1% ATR. 100 M egohm s IR) Vibration 3329 , . 200 cycles 3329 . (4% ATR; 4% CRV) R J 50/R JR 5 0 , values listed In boldface. Special resistances available. HOW TO ORDER .24 ( 6 .10) 3329 H Model


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PDF MIL-R-22097 RJR50 MIL-R-39035 RJ50/RJR50 3329/FtJ50/RJR50 J50 O 26 tic 260
TIP 122

Abstract: texas instruments tip122 T1P120 TEXAS INSTRUMENTS TIP120 TIP 122 transistor TIP122 texas instrument TRANSISTOR tip122 TIP122 TIP121 TEXAS TIP127
Text: MinhfEof 1000 at 3 V, 3 A 50 mJ Reverse Energy Rating T-33-29 device schematic to-22qab package the , - —-— I TIP120, TIP121, TIP122 T-33-29 ì N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS , MEASUREMENT INFORMATION T-33-29 1N914 H—M- 1N914 1N914 1N914 270 pF VBB1 «32V ADJUST FOR Von - 30 , SILICON POWER TRANSISTORS 62C 36897 T-33-29 ¿v , PARAMETER MEASUREMENT INFORMATION INPUT TEST , SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS T-33-29 STATIC FORWARD CURRENT TRANSFER RATIO vs


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PDF TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 T-33-29 to-22qab TIP120 TIP121 TIP 122 texas instruments tip122 T1P120 TEXAS INSTRUMENTS TIP120 TIP 122 transistor TIP122 texas instrument TRANSISTOR tip122 TIP121 TEXAS
transistor BD6

Abstract: bd645 transistor BD643 H 649 A transistor
Text: BD643; BD645; BD647; BD649; BD651 PHILIPS INTERNATIONAL 5bE D 711Dfl2b ODMS'IS? bflB M P H I N T-33-29 , CB0 max; Tj = 150 °C 5bE D BD643; BD645; BD647; BD649; BD651_ 711002b 0042*120 514 IPHIN T-33-29 , time 5bE D 711Dfl2b O O M S ^ typ . max. ty p . max. 4SD BIPHIN T-33-29 1.0 2.0 5.0 10 ms , TllQBEb QDMS^ai OQT BIPHIN T-33-29 iA ) 'CMmax 5 -0 .0 1 10 'C m a x . I id 100 ms N L , . 218 July 1988 Silicon Darlington power transistors T-33-29 SbE D - Il . I BD643


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PDF BD643; BD645; BD647; BD649; BD651 7110fi2b BD644, BD646, BD648, BD650 transistor BD6 bd645 transistor BD643 H 649 A transistor
TIPL773A

Abstract: TIPL773B TRANSISTOR tipl773A TIPL773 NPN Transistor 1.5A 600V D037 7626S transistor BC 185 texas instruments transistor
Text: Specified at 100°C T-33-29 device schematic < -w- t0-3 package E-J ■emitter the collector is , characteristics at 25°C case temperature (unless otherwise noted) T-33-29 PARAMETER TEST CONDITIONS TIPL773A , DARLINGTON 62C 37080 T-33-29 J electrical characteristics at 25°C case temperature (unless otherwise , 37081 T-33-29 D f TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR ADVANCED POWER , ) TIPL773, TIPL773A, TIPL773B N-P-N SILICON TRIPLE TRANSISTOR -ADVANCED POWER DARLINGTONS 62c 37082 d T-33-29


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PDF Q037D77 TIPL773, TIPL773A, TIPL773B T-33-29 TIPL773 TIPL773A TIPL773B TRANSISTOR tipl773A NPN Transistor 1.5A 600V D037 7626S transistor BC 185 texas instruments transistor
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