The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT5568EUF Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LT5568EUF#TR Linear Technology RF/Microwave Modulator/Demodulator, 700 MHz - 1050 MHz RF/MICROWAVE I/Q MODULATOR, 4 X 4 MM, PLASTIC, MO-220WGGC, QFN-16
LT5534ESC6PBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LTC5508ESC6-#PBF Linear Technology RF/Microwave Detector, 300 MHz - 7000 MHz RF/MICROWAVE LINEAR DETECTOR, 12 dBm INPUT POWER-MAX, PLASTIC, SC6, SC-70, 6 PIN
LT5534ESC6TRPBF Linear Technology RF/Microwave Detector, 50 MHz - 3000 MHz RF/MICROWAVE LINEAR DETECTOR, LEAD FREE, PLASTIC, SC-70, MO-203AB, 6 PIN
LT3743EFE#TRPBF Linear Technology LT3743 - High Current Synchronous Step-Down LED Driver with Three-State Control; Package: TSSOP; Pins: 28; Temperature Range: -40°C to 85°C

Solid State Microwave Datasheets Context Search

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thomson microwave transistor

Abstract: thomson rf power transistor
Text: S G S- THOMSON Q4C D | 752=1237 000141 3 ( j 7^- _ SOLID STATE MICROWAVE SD1544 THOMSON-CSF COMPONENTS CORPORATION I Montgomeryville, PA 18936 (215}362-8500 » T W X 51Q 661-7299 _ , - · · ~ j 2 GHz MICROWAVE POWER TRANSISTOR DESCRIPTION The SSM SD1544 is a gold metalized, silicon NPN transistor. It is primarily designed for class A, B and C, VHF/UHF and microwave amplifier or oscillator applications. The device is particularly suitable for use in microwave communication


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PDF SD1544 SD1544 thomson microwave transistor thomson rf power transistor
2015 - Not Available

Abstract: No abstract text available
Text: The MILMEGA Series 2000 Broadband Class A Solid State Microwave Amplifier Modules & Kits High reliability combined with compact size and low weight make the MILMEGA amplifier and kit family ideal for use in commercial applications where space is at a premium and portability can be used to advantage. Broadband Solid State Maximum Power Other models available in a range of bandwidths from 800MHz - , 01.07.2014 Designers and Manufacturers of High Power Microwave and RF Amplifiers MILMEGA Ltd Park Road


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PDF 800MHz
2014 - AS0104-700/300

Abstract: No abstract text available
Text:   The MILMEGA ‘AS’ Series 2000 Dual Band Class A Solid State Microwave Amplifier Range  Model: AS0104-700/300 700 Watt & 300 Watt 1.0 GHz - 4.0 GHz Dual Band Broadband Amplifier Two bands (1.0-2.0GHz and 2.0 to 4.0 GHz)    The AS0104 series of solid state power amplifiers follows the MILMEGA tradition for compact, upgradeable microwave power amplifier solutions with field proven reliability. Developed to cover the frequency band 1.0 - 4.0 GHz in two bands (1.0 GHz to


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PDF AS0104-700/300 AS0104 RS232, RS232 7/16th 800mm AS0104-700/300
SD1451

Abstract: transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave
Text: S G S—THOMSON_OMC D JTTETEB? aoaaQ7â 0 SOLID STATE MICROWAVE THOMSON-CSF COMPONENTS CORPORATION ; MontgomeryvKIe, PA 18936 ■(215) 362-8500 ■TWX510-661-7299 SD1451 2-30 MHz, 12.5 V SSB POWER TRANSISTOR DESCRIPTION The SD1451 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. FEATURES • 15 dB gain at 30 MHz and 50 W (PEP or CW) â


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PDF TWX510-661-7299 SD1451 SD1451 transistor sd1451 CQ 730 SD1451-2 TWX510-661-7299 Solid State Microwave
2014 - AS0860A-100/50

Abstract: No abstract text available
Text:   The MILMEGA ‘AS’ Series 2000 Dual Band Class A Solid State Microwave Amplifier Range  The AS0860 series of solid state power amplifiers follows the MILMEGA tradition for compact, upgradeable microwave power amplifier solutions with field proven reliability. Developed to cover the frequency band 0.8 6.0 GHz in two bands (0.8 GHz to 2.7 GHz and 2.0 GHz to 6.0 GHz). Model: AS0860A-100/50 100 Watt & 50 Watt 1.0 GHz - 6.0 GHz Dual Band Broadband Amplifier Two bands (0.8 to 2.7 and


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PDF AS0860 AS0860A-100/50 RS232, RS232 AS0860A-100/50
2014 - AS0860A-200/100

Abstract: No abstract text available
Text:   The MILMEGA ‘AS’ Series 2000 Dual Band Class A Solid State Microwave Amplifier Range  Model: AS0860A-200/100 200 Watt & 100 Watt 1.0 GHz - 6.0 GHz Dual Band Broadband Amplifier Two bands (0.8 to 2.7 and 2.0 to 6.0 GHz)    The AS0860 series of solid state power amplifiers follows the MILMEGA tradition for compact, upgradeable microwave power amplifier solutions with field proven reliability. Developed to cover the frequency band 0.8 6.0 GHz in two bands (0.8 GHz


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PDF AS0860A-200/100 AS0860 RS232, RS232 AS0860A-200/100
2014 - AS0860A-200/50

Abstract: No abstract text available
Text:   The MILMEGA ‘AS’ Series 2000 Dual Band Class A Solid State Microwave Amplifier Range  Model: AS0860A-200/50 200 Watt & 50 Watt 1.0 GHz - 6.0 GHz Dual Band Broadband Amplifier Two bands (0.8 to 2.7 and 2.0 to 6.0 GHz)    The AS0860 series of solid state power amplifiers follows the MILMEGA tradition for compact, upgradeable microwave power amplifier solutions with field proven reliability. Developed to cover the frequency band 0.8 6.0 GHz in two bands (0.8 GHz


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PDF AS0860A-200/50 AS0860 RS232, RS232 AS0860A-200/50
Not Available

Abstract: No abstract text available
Text: recommended. 50 100 Cas« Temp. ( ° C ) Litton Solid State Microwave Semiconductor Products 150 , LITTON IND/LITTON SOLID SbE D ■S£L»4EOO DQ0G533 S l l ■L I T T ff Hton_ LF3850 Solid State 2 Watt Power GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■+33 dBm Typical Output Power @ 8GHz ■6 dB Typical Compressed Gain @ 8GHz - 900 , = 1 mA 1400 LITTON IND/LITTON SOLID SbE D ■S544E00 DD0D534 114 ■LITT


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PDF DQ0G533 LF3850 2285-C
2N3924

Abstract: 2N3927 2N3926 THOMSON-CSF MICROWAVE TRANSISTORS N3924
Text: S G S-THO MSON SOLID STATE MICROWAVE THQMSON-CSF COMPONENTS CORPORATION ;Montgomeryvilie, P A 18936 (215) 362-8500 » TWX 510-661-7299 2N 3924 2N 3926 2N3927 VHF COMMUNICATIONS TRANSISTORS DESCRIPTION: These SSM devices are silicon epitaxial NPN-planar transistors which employ a multi-emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling capability, high power gain, low base resistance and low output


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PDF 2N3927 metall926 2N3927 N3924 2N3926 2N3924 2N3926 THOMSON-CSF MICROWAVE TRANSISTORS N3924
multi-emitter transistor

Abstract: 2N5090 Thomson-CSF amplifier N5090
Text: S G S-THOMSON □ SC D | 7^237 DGOOnt b | SOLID STATE MICROWAVE THOMSON-CSF COMPONENTS CORPORATION . Montgomery ville,. PA 18936" (215) 362-8500 "TWX 510-661-7299 2 N5090 1.2 W, 28 V, VHF-UHF POWER TRANSISTOR DESCRIPTION: •The 2N5090 is a silicon epitaxial NPN planar transistor that employs a multi-emitter electrode design. This feature together with a heavily diffused base, matrix located between the individual emitters result in high RF current handling capability, high power gain, low base


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PDF N5090 2N5090 400mHz 100mHz 400mHz, multi-emitter transistor Thomson-CSF amplifier N5090
SD1089

Abstract: vk 200
Text: S G S-TH O M SG N SC D I SOLID STATE MICROWAVE THOMSON-CSF COMPONENTS CORPORATION I 7 ^ 2 3 ? QODQltiM M D T '- Montgomery ville, PA 18936 · (215) 362-8500 TWX 510-661-7299 SD1089 40 W, 12.5 V, UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1089 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes "Tuned Q" technology which employs a matching network on the input to optimize gain and maximize bandwidth. FEATURES ·


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PDF SD1089 SD1089 VK-200 vk 200
Not Available

Abstract: No abstract text available
Text: Case Temp. ( c C) Litton Solid State Microwave Semiconductor Products 2285-C Martin Avenue , LITTON IND/LITTON SOLID SbE ] > ■5S44SDD 0GDG524 275 ■LITT Litton LF6872 Solid State 1/4 W att, Low Distortion GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■+24 dBm Typical Output Power @ 18GHz ■6 dB Typical Compressed Gain @ 18GHz ■Low 2nd Harmonic Distortion ■Sharp Limiting Characteristics ■0.5 X 720 Micron Ti/Pt/Au Recessed Gate ■MBE Grown


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PDF 5S44SDD 0GDG524 LF6872 18GHz LF6872 2285-C
MT59

Abstract: 2N4428 MT 59 2N4429 2N4430 THOMSON-CSF MICROWAVE TRANSISTORS MT-59
Text: S G S - T H OMS ON 05C D SOLID STATE MICROWAVE THOMSONCSF COMPONENTS CORPORATION Montgomeryville, PA 18936" (215) 362-8500 TW X 510-661-7299 2N4428 2N4430 2N4429 2N4431 .75 W/1 W/2,5 W/5 W, 28 V, UHF PO W ER T R A N S IS T O R DESCRIPTION: This family o f single chip silicon transistors was designed for reliable operation in the l GHz region, Precise epitaxial growth, diffusion, photoengraving and injection molding techniques are employed to fabri cate each device. The family is intended


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PDF 2N4428 2N4430 2N4429 2N4431 2N4431 2N4430 400mA 750mW MT59 MT 59 THOMSON-CSF MICROWAVE TRANSISTORS MT-59
SD1007

Abstract: SD1007 transistor thomson microwave transistor
Text: S -THOMSON SOLID STATE MICROWAVE SD1007 THOMSON-CSF COMPONENTS CORPORATION Montgomery vilje, PÀ 18936 (215) 362-8500 JW X .510-661-7299 . . . CATV/MATV AMPLIFIER TRANSISTOR DESCRIPTION SSM device type SD 1007-1 is a silicon epitaxial NPN-planar transistor which employs a m ulti-em itter electrode design. The SD1007-1 was designed for high frequency- CATV, MATV amplifier applications. It is suitable for driver or o utput stages. It employs dual electrically m atched interdigited chips for equal


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PDF SD1007 SD1007-1 SD1007 SD1007 transistor thomson microwave transistor
2N5016

Abstract: transistor 2n5016 att1100 multi-emitter transistor
Text: s G S-THOMSON Q4C D | 7=12^37 Q0GQ120 b " J~ ° *f SOLID STATE MICROWAVE 2N5016 THOMSON-CSF COMPONENTS CORPORATION Montgomeryviìie, P A 18936 (215) 855-8400 » TWX 510-661-7299 1 . VHF-UHF SILICON NPN POWER TRANSISTOR DESCRIPTION: The SSS 2N5016 is a silicon epitaxial NPN planar transistor which employs a multi-emitter electrode design. This feature together with a heavily diffused base matrix located between the individual emitters result in high RF current handling


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PDF Q0GQ120 2N5016 2N5016 700mHz. transistor 2n5016 att1100 multi-emitter transistor
2N3553

Abstract: 2N3375 2N3733 2N 3375
Text: s 'G S-THOMSON ÜSC D | 7T2TE37 GOQanQ 5 Ì o T ~ ? $ r 0 ? SOLID STATE MICROWAVE THOMSON-CSF COMPONENTS CORPORATION `Montgomeryville, PA 1893Ç (215) 362-8500 TWX 510-661-7299 2N 3375 2N 3632 2N3553 2N 3733 2.5 W /3.0 W /1 0 W /l 3.5 W, 28 V, DESCRIPTIO N: VHF-UHF POWER TRANSISTORS This line o f silicon ep itaxial N PN planar high freq u en cy transistors em p lo y s a m u lti em itter electrod e design. T h is feature togeth er w ith a heavily d iffu


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PDF 7T2TE37 2N3553 2N3733 2N3375 2N3733 2N 3375
2014 - ATP10K100M

Abstract: 100w1000 Amplifier Research LA250
Text: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers , Instrumentation is the world-class source for broadband high power solid state RF and microwave amplifiers; TWT , , 10kHz–400MHz 1500W1000 Solid State Amplifier: 1500 watt CW, 80 - 1000 MHz 2000W1000C Solid State Amplifier: 2000 Watt CW, 80 - 1000 MHz 3000W1000B Solid State Amplifier: 3000 Watt CW, 80 - 1000 MHz


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PDF 250T1G3, 200T2G8A 250T8G18 January/3500 ATP10K100M 100w1000 Amplifier Research LA250
1996 - 130-082

Abstract: IC TB 1237 AN amplifier simulation circuit NEC 7812 s2p n34018h C band FET transistor s-parameters AN1022 CS 5609 transistor NEC 7812 Transistor LM 7812
Text: . Ha, " Solid State Microwave Amplifier Design," John Wiley and Sons. Chapter 2. [2] R.E. Collins , the process by which microwave amplifier designers choose their designs based on performance , important RF and microwave techniques that can be applied to other digital applications. The device , general microwave two port network theory [1], [2], the maximum gain is defined as: 2 2 2 (1 , beyond the scope of this article, however, the results are of importance in the design of microwave


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PDF AN1022 24-Hour 130-082 IC TB 1237 AN amplifier simulation circuit NEC 7812 s2p n34018h C band FET transistor s-parameters AN1022 CS 5609 transistor NEC 7812 Transistor LM 7812
2003 - 130-082

Abstract: Transistor LM 7812 NEC 7812 34018 NEc hemt 2052-1215 IC LM 7812 CS 5609 transistor NEC 7812 NE34018 equivalent
Text: applications. AN1022 REFERENCES [1] Tri T. Ha, " Solid State Microwave Amplifier Design," John Wiley and , the process by which microwave amplifier designers choose their designs based on performance , important RF and microwave techniques that can be applied to other digital applications. The device , matching. conjugatively matched (Figure 1). From general microwave two port network theory [1], [2], the , design of microwave amplifiers. The maximum gain is found to be achieved when the device is


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PDF AN1022 130-082 Transistor LM 7812 NEC 7812 34018 NEc hemt 2052-1215 IC LM 7812 CS 5609 transistor NEC 7812 NE34018 equivalent
2006 - Not Available

Abstract: No abstract text available
Text: Honeywell Solid State Electronics Center 12001 State Highway 55 Plymouth, Minnesota 55441-4799 , Honeywell Solid State Electronics Center 12001 State Highway 55 Plymouth, Minnesota 55441-4799 , Honeywell Solid State Electronics Center 12001 State Highway 55 Plymouth, Minnesota 55441-4799 , Honeywell Solid State Electronics Center 12001 State Highway 55 Plymouth, Minnesota 55441-4799 , Honeywell Solid State Electronics Center 12001 State Highway 55 Plymouth, Minnesota 55441-4799


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PDF HRF-AT4510 HRF-AT4510
2007 - Solid State Switches

Abstract: pin diode switch up to 10 GHz N1810TL Solid State Microwave PIN Diode Switch for frequencies up to 10 GHz microwave fet IC
Text: Agilent Solid State Switches Application Note Selecting the right switch technology for your , technologies in use today, namely solid state and electro-mechanical (EM), will be discussed. The primary , . b) Solid state switches. There are two main types of solid state switches: field-effect transistors , material. 2 Solid State Switch Overview FETs and PIN diodes have long been used for switching , comparison of electro-mechanical versus solid state switches. Table 1. Mechanical and solid state switch


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PDF the848 5989-5189EN Solid State Switches pin diode switch up to 10 GHz N1810TL Solid State Microwave PIN Diode Switch for frequencies up to 10 GHz microwave fet IC
2006 - Not Available

Abstract: No abstract text available
Text: Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , . Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , ) Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , ) Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State


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PDF HRF-AT4511 HRF-AT4511
2006 - HRF-AT4611-AU

Abstract: No abstract text available
Text: Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , . Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , . Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , ) Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , ) Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State


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PDF HRF-AT4611 HRF-AT4611 HRF-AT4611-AU
2006 - AN-310

Abstract: No abstract text available
Text: Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , . Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , . Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , ) Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , ) Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State


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PDF HRF-AT4610 HRF-AT4610 AN-310
2006 - DIGITAL ATTENUATOR up to 31 dB

Abstract: HRF-AT4521-AU
Text: Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , . Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , . Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , ) Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State , ) Web Site: www.honeywell.com/ microwave Honeywell Solid State Electronics Center 12001 State


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PDF HRF-AT4521 HRF-AT4521 DIGITAL ATTENUATOR up to 31 dB HRF-AT4521-AU
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