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Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1158IN#TR Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1162CN Linear Technology IC 1.5 A FULL BRDG BASED MOSFET DRIVER, PDIP24, 0.300 INCH, PLASTIC, DIP-24, MOSFET Driver
LT1158IS#TR Linear Technology IC 15 A HALF BRDG BASED MOSFET DRIVER, PDSO16, SOIC-16, MOSFET Driver
LT1158IN#TRPBF Linear Technology IC HALF BRDG BASED MOSFET DRIVER, PDIP16, 0.300 INCH, PLASTIC, DIP-16, MOSFET Driver
LT1161CS Linear Technology IC 4 CHANNEL, BUF OR INV BASED MOSFET DRIVER, PDSO20, SO-20, MOSFET Driver
LT1160IS#TR Linear Technology IC 1.5 A HALF BRDG BASED MOSFET DRIVER, PDSO14, 0.150 INCH, PLASTIC, SO-14, MOSFET Driver

Simple test MOSFET Procedures Datasheets Context Search

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Not Available

Abstract: No abstract text available
Text: DRF12XX series of devices. The Hybrid consists of a MOSFET Driver and Power MOSFET . The control signal is , internally applied to the gate of the Power MOSFET . The logic diagram for the hybrid is shown in Table 1 , (pin 3) Invert/Non-invert IN (pin 4) Control MOSFET Function High High On , choice. It is initially configured as shown in Figure 2 allowing the user to evaluate the simple , Connected to MOSFET Source Table 2 Table 2 shows Evaluation board inputs and outputs and the highly


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PDF DRF12XX DRF12XX, DRF12XX
choke vk200

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at , N-CHANNEL BROADBAND RF POWER MOSFET · Typical Performance at 175 MHz, 50 V: Output Power - 150 W Gain - , ) !MD(d9-13) _ - NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference Each , . Copper Clad, 2 Sides, er = 5 Figure 1.30 MHz Test Circuit MOTOROLA RF DEVICE DATA MRF141 2-139


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PDF MRF141 choke vk200
2013 - supercap

Abstract: No abstract text available
Text: extra power dissipation. For many applications, SAB MOSFET automatic charge balancing offers a simple , MOSFET in balancing supercaps is basically simple . It is based on the natural threshold characteristics , /ALD910024/ALD910025/ ALD910026/ALD910027/ALD910028 DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET , connected two, three or four in series can be balanced with an ALD8100xx quad package. • Simple and , MOSFET provides regulation of the voltage across a supercap cell by increasing its drain current


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PDF ALD910023/ALD910024/ALD910025/ ALD910026/ALD910027/ALD910028 ALD8100xx ALD9100xx ALD910023, ALD910024, ALD910025, ALD910026, supercap
2014 - ALD810026SCL

Abstract: No abstract text available
Text: extra power dissipation. For many applications, SAB MOSFET automatic charge balancing offers a simple , the Supercap Auto Balancing MOSFET in balancing supercaps is basically simple . It is based on the , /ALD810024/ALD810025/ ALD810026/ALD810027/ALD810028 QUAD SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET , connected two, three or four in series can be balanced with an ALD8100xx quad package. • Simple and , SAB MOSFET provides regulation of the voltage across a supercap cell by increasing its drain current


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PDF ALD810023/ALD810024/ALD810025/ ALD810026/ALD810027/ALD810028 ALD8100xx ALD9100xx SOIC-16 ALD810023, ALD810024, ALD810025, ALD810026SCL
MRF151G

Abstract: BH Rf transistor mrf151g 300 MRF151G hf amplifier
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , , 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS Rating Drain-Source , details of T1 and T2. Test Circuit MRF151G 4.2-137 TYPICAL CHARACTERISTICS C, CAPACITANCE (pF , 4.2-139 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results


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PDF 16dBTyp) MRF151G BH Rf transistor mrf151g 300 MRF151G hf amplifier
application MOSFET transmitters fm

Abstract: TOROIDS Design Considerations mrf141g
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , , 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS Rating Drain-Source , Capacitors are ATC Type 100 or Equivalent. Figure 1.175 MHz Test Circuit TYPICAL CHARACTERISTICS , MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors


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MRF151G

Abstract: MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF151G RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military , Reliability 300 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · if G oGO-o S (FUNGE , output transformer. See Figure 6 for construction details of T1 and T2. Figure 1.175 MHz Test Circuit , Output Impedance MOTOROLA RF DEVICE DATA MRF151G 2-167 RF POWER MOSFET CONSIDERATIONS MOSFET


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PDF MRF151G MRF151G MRF151G hf amplifier testing of mosfet gain control rf amplifier circuit mrf151g RF TOROIDS Design Considerations
arco 406

Abstract: mrf141g transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , Reliability MRF141G 300 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS , Equivalent. Figure 1.175 MHz Test Circuit TYPICAL CHARACTERISTICS I q , DRAIN CURRENT (AMPS , MOTOROLA RF DEVICE DATA MRF141G 2-239 RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The physical


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PDF MRF141G MRF141G arco 406 transistor fet N-Channel RF Amplifier RF TOROIDS Design Considerations
MRF151G

Abstract: application MOSFET transmitters fm rf amplifier circuit mrf151g MRF151G hf amplifier
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , Reliability 300 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET · · · MAXIMUM RATINGS Rating , details of T1 and T2. Figure 1.175 MHz Test Circuit MRF151G 2-258 M O T O R O L A R F D E V IC E DATA , 2-260 M O T O R O L A R F D E V IC E DATA RF POWER MOSFET CONSIDERATIONS MOSFET CAPACITANCES The


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DEIC-515

Abstract: DEIC515 transformer 12V Ampere output mosfet HF amplifier 1 ampere 15v transformer "RF MOSFETs" trifilar "RF MOSFET" RF MOSFET Driver transformer 12V 2 Ampere
Text: DEIC515 15 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description · Built using , DEIC515 15 Ampere Low-Side Ultrafast RF MOSFET Driver Absolute Maximum Ratings Parameter Value , measurements with respect to DGND. DEIC515 configured as described in Test Conditions. Symbol Parameter VIH , input voltage Low input voltage Input voltage range IIN VOH VOL ROH Test Conditions 45 , MOSFET Driver Lead Description - DEIC515 SYMBOL VCC VCCIN IN OUT PGND INGND FUNCTION


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PDF DEIC515 TheDEIC515 45MHz, DEIC515 DEIC-515 transformer 12V Ampere output mosfet HF amplifier 1 ampere 15v transformer "RF MOSFETs" trifilar "RF MOSFET" RF MOSFET Driver transformer 12V 2 Ampere
2006 - 6535CBZ

Abstract: 6535CRZ
Text: range. The ISL6535 provides simple , single feedback loop, voltagemode control with fast transient , ISL6535's overcurrent protection monitors the current by using the rDS(ON) of the upper MOSFET which , Over the Industrial Temperature Range · Simple Single-Loop Control Design - Voltage-Mode PWM Control · , from 50kHz to Over 1.5MHz · 12V High Speed MOSFET Gate Drivers - 2.0A Source/3A Sink at 12V Low Side , Overcurrent Fault Monitor - High-Side MOSFET 's rDS(ON) Sensing - Reduced ~120ns Blanking Time · Converter can


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PDF ISL6535 FN9255 ISL6535 50kHz STD-020. 1-888-INTERSIL 6535CBZ 6535CRZ
MOSFET TEST SIMPLE Procedures

Abstract: mosfet HF amplifier Simple test MOSFET Procedures AN211A MRF175LU hf amplifier 100w 100W zener diode mosfet vhf power amplifier
Text: MRF175LU The RF MOSFET Line 100W, 400MHz, 28V M/A-COM Products Released - Rev. 07.07 , samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve , information contained herein without notice. MRF175LU The RF MOSFET Line 100W, 400MHz, 28V M/A-COM , been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc , . changes to the product(s) or information contained herein without notice. MRF175LU The RF MOSFET Line


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PDF MRF175LU 400MHz, MOSFET TEST SIMPLE Procedures mosfet HF amplifier Simple test MOSFET Procedures AN211A MRF175LU hf amplifier 100w 100W zener diode mosfet vhf power amplifier
2003 - ISL6526

Abstract: Intersil dc-dc buck converter MO-220 ISL6526IB ISL6526CR ISL6526CB ISL6526ACR ISL6526ACB ISL6526A voltage-mode pwm
Text: ) Controller Features · Operates from 3.3V to 5V Input The ISL6526 makes simple work out of implementing , , monitoring and protection functions into a single package. The ISL6526 provides simple , single feedback , the upper MOSFET to inhibit PWM operation appropriately. This approach simplifies the implementation , Internal Reference - ±1.5% Over Load, Line Voltage and Temperature · Drives N-Channel MOSFETs · Simple , MOSFET 's rDS(on) · Converter can Source and Sink Current · Small Converter Size - Internal Fixed


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PDF ISL6526 ISL6526 redu26A 1-888-INTERSIL Intersil dc-dc buck converter MO-220 ISL6526IB ISL6526CR ISL6526CB ISL6526ACR ISL6526ACB ISL6526A voltage-mode pwm
2002 - AN799 Matching MOSFET Drivers to MOSFETs

Abstract: an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application MOSFET TEST SIMPLE Procedures TC4420 die TC4469
Text: AN799 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. TC4424 MOSFET DIE SIZES Unlike bipolar transistors in which die size is , simple numeric indicators 0 through 6. Thus, a Hex 0 is the smallest die, while a Hex 6 is the largest in standard MOSFET offerings. Some other manufacturers (IXYS) are offering sizes as large as Hex 9


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PDF AN799 TC4424 D-81739 DS00799A* DS00799A-page AN799 Matching MOSFET Drivers to MOSFETs an799 an799 microchip IRF450A TC4424 motor driver Matching MOSFET Drivers to MOSFETs TC4431 application MOSFET TEST SIMPLE Procedures TC4420 die TC4469
2001 - on ic 4148 details

Abstract: 9974 mosfet HIP6005 HIP6007 ISL6430 RFP25N05 RFP45N06 dc-dc converter 12v to 5v 3a ic 9974
Text: voltage-mode controller with many functions needed for high-performance processors. Figure 1 shows a simple , two MOSFET drivers for use in synchronous-rectified buck converters. A more complete description of , to higher MOSFET switching losses and is displayed in Figure 2. OCSET SS The ISL6430EVAL1 is , voltages. Simple resistor value changes allow for outputs as low as 1.3V. The schematic and , are sensitive to electrostatic discharge; follow proper IC Handling Procedures . 1-888-INTERSIL or


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PDF ISL6430 AN9974 ISL6430 CH-1009 on ic 4148 details 9974 mosfet HIP6005 HIP6007 RFP25N05 RFP45N06 dc-dc converter 12v to 5v 3a ic 9974
2001 - Matching MOSFET Drivers to MOSFETs

Abstract: IRF450 application IRF450A mosfet IRF450 matching mosfet TC4420-29 TC4431 application TC4420 die TC170 TC426
Text: AN30 Matching MOSFET Drivers to MOSFETs INTRODUCTION V+ Microchip offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/ MOSFET to the application. MOSFET DIE SIZES TC4424 Input Unlike bipolar transistors in which die , , they have used simple numeric indicators 0 through 6. Thus, a Hex 0 is the smallest die, while a Hex 6 is the largest in standard MOSFET offerings. Some other manufacturers (IXYS) are offering sizes as


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PDF TC4424 DS00799A Matching MOSFET Drivers to MOSFETs IRF450 application IRF450A mosfet IRF450 matching mosfet TC4420-29 TC4431 application TC4420 die TC170 TC426
2006 - 74397

Abstract: steinel HG3002LCD steinel "air gun" APR-5000 AR5000 SiE802DF AN828 PolarPAK WEIGHT reflow profile
Text: By Kandarp Pandya INTRODUCTION ® PolarPAK , a new-generation Vishay Siliconix power MOSFET , soldering iron is one of the most detrimental mistakes, resulting in catastrophic damage to the MOSFET . This , soldering procedures closely matching the production reflow profile, while in turn insuring a reliable , the electrical functionality of the part is verified after both soldering and re-works procedures , is connected to pins 1, 5, 6, and 10 Figure 1d. Pin Configuration (2) Test PCB used for this


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PDF AN828 SiE802DF 21-Aug-06 74397 steinel HG3002LCD steinel "air gun" APR-5000 AR5000 AN828 PolarPAK WEIGHT reflow profile
2007 - Not Available

Abstract: No abstract text available
Text: applications. The ISL6420BMAEP provides simple , single feedback loop, voltage mode control with fast transient , from overcurrent conditions is provided by monitoring the rDS(ON) of the upper MOSFET to inhibit the , Fabrication Site and One Assembly/ Test Site · Full Homogeneous Lot Processing in Wafer Fab · No Combination of Wafer Fabrication Lots in Assembly · Full Traceability Through Assembly and Test by Date/Trace Code , Output Can Sink or Source Current · Lossless, Programmable Overcurrent Protection - Uses Upper MOSFET


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PDF ISL6420BM FN6574 ISL6420BMAEP ISL6420description
2007 - ISL6420BMAEP

Abstract: TB347
Text: applications. The ISL6420BMAEP provides simple , single feedback loop, voltage mode control with fast , monitoring the rDS(ON) of the upper MOSFET to inhibit the PWM operation appropriately. This approach , from -55°C to +125°C · Controlled Baseline with One Wafer Fabrication Site and One Assembly/ Test Site , Assembly · Full Traceability Through Assembly and Test by Date/Trace Code Assignment · Enhanced Process , Output Can Sink or Source Current · Lossless, Programmable Overcurrent Protection - Uses Upper MOSFET


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PDF ISL6420BMAEP ISL6420BMAEP FN6574 TB347
Not Available

Abstract: No abstract text available
Text: control. Based on the proven technology of our BASIC Stamp 1 microcontroller, this product is both simple to use and incredibly versatile in its capabilities. Features  Simple to program with PBASIC  Two programmable I/O ports  Five high power outputs ( MOSFET )  Adjustable voltage sensor , /2013 Page 1 of 8 Description The Light Commander has five high-power MOSFET outputs available to , have a push button switch available that can be programmed for anything from simple On/Off functions


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RF MOSFET CLASS AB

Abstract: AN211-A motorola bipolar transistor data manual
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at , POWER MOSFET · · · · CASE 2 11 -1 t, STYLE 2 MAXIMUM RATINGS Rating Drain-Source Voltage , -7 5 - dB - - NOTE: 1. To MIL-STD-1311 Version A, Test Method 2204B, Two Tone, Reference , Sides, E r = 5 Figure 1. 30 MHz Test Circuit (Class AB) MOTOROLA RF DEVICE DATA MRF141 2-231


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2009 - "RF MOSFET"

Abstract: mosfet HF amplifier MRF175GV AN211A MRF175GU MOSFET TEST SIMPLE Procedures
Text: MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V M/A-COM Products Released - Rev , samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve , information contained herein without notice. MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V , typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM , . MRF175GU MRF175GV The RF MOSFET Line 200/150W, 500MHz, 28V M/A-COM Products Released - Rev. 07.07


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PDF MRF175GU MRF175GV 200/150W, 500MHz, "RF MOSFET" mosfet HF amplifier MRF175GV AN211A MRF175GU MOSFET TEST SIMPLE Procedures
STO-175

Abstract: MRF151 MOSFET RF POWER TRANSISTOR VHF
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET D e s ig n e d fo r b ro a d b a n d co m m e rc ia l a n d m ilita ry a , 150 W, 50 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFET MAXIMUM RATINGS R ating D rain-Source , -1 311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. C1 - 470 pF Dipped Mica C2 , " Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, er = 5 Figure 1. 30 MHz Test Circuit MOTOROLA WIRELESS


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PDF MRF151 STO-175 MOSFET RF POWER TRANSISTOR VHF
2012 - EH4295

Abstract: energy-harvesting EH4200
Text: . in. • Simple and easy to use - just connect a 2-wire input source and 2-wire output load â , high-efficiency energy conversion • Unique custom on-board EPAD® MOSFET arrays • Optional user-installed , Energy Harvesting Modules, offers a simple and efficient solution when used with a low-voltage , Micropower Step Up Low Voltage Booster Module is a simple but sophisticated development that thrives on ultra low power operation as well as ultra low voltage operation. At its core is an ALD EPAD® MOSFET


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PDF EH4295 EH4295 EH4200 EH301 energy-harvesting
2012 - EH4200

Abstract: No abstract text available
Text: energy-harvesting applications, the EH4205, combined with EH300 Series Energy Harvesting Modules, offers a simple , Nominal input impedance of 50 Ω@VIN=0.25V Small footprint and volume less than 1 cu. in. Simple and , ® Unique custom on-board EPAD MOSFET arrays Optional user-installed full wave rectifier on board to , Step Up Low Voltage Booster Module is a simple but sophisticated development that thrives on ultra low power operation as well as ultra low voltage operation. At its core is an ALD EPAD® MOSFET array that


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PDF EH4205 EH4205 EH4200 EH301
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