The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1057IS8#TRPBF Linear Technology LT1057 - Dual JFET Input Precision High Speed Op Amps; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1122DS8#TRPBF Linear Technology LT1122 - Fast Settling, JFET Input Operational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1792ACS8#PBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C
LT1792IS8#TRPBF Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1793IN8#PBF Linear Technology LT1793 - Low Noise, Picoampere Bias Current, JFET Input Op Amp; Package: PDIP; Pins: 8; Temperature Range: -40°C to 85°C
LT1122DS8#TR Linear Technology LT1122 - Fast Settling, JFET Input Operational Amplifier; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

Siliconix JFET Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2005 - Siliconix JFET

Abstract: "Siliconix" "JFET" AN105 VCR2N siliconix J-FET 41225 VCR7N
Text: VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number , Controlled Oscillator D AGC DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an ac , -Jun-04 www.vishay.com 1 VCR2N/4N/7N Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Gate-Source, Gate-Drain Voltage , -41225-Rev. F, 28-Jun-04 VCR2N/4N/7N Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE , Revision: 08-Apr-05 www.vishay.com 1 Vishay Siliconix


Original
PDF 08-Apr-05 Siliconix JFET "Siliconix" "JFET" AN105 VCR2N siliconix J-FET 41225 VCR7N
2009 - VCR2N

Abstract: jfet transistor for VCR AN105
Text: VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number , Controlled Oscillator D AGC DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an ac , -Jun-04 www.vishay.com 1 VCR2N/4N/7N Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Gate-Source, Gate-Drain Voltage , -41225-Rev. F, 28-Jun-04 VCR2N/4N/7N Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE , Revision: 18-Jul-08 www.vishay.com 1 Vishay Siliconix


Original
PDF 18-Jul-08 VCR2N jfet transistor for VCR AN105
1995 - Siliconix JFET

Abstract: Siliconix AN102 AN102 "Siliconix" "JFET" an102 siliconix 2N5484 J202 SST441 SST5484 matched pair JFET
Text: AN102 Siliconix JFET Biasing Techniques Introduction Self bias (also called source bias , where: , g fs RD AV + 1 ) R g , gos + JFET output conductance D os (1) In most applications , moves the load line horizontally. 1 AN102 Siliconix The transfer characteristic is a plot , from the vertical. The capacitor drop subtracts from eg. (08/11/94) AN102 Siliconix SelfBias , reasonably flat load line without sacrificing dynamic range. 3 AN102 Siliconix Biasing for Device


Original
PDF AN102 2N4338/9 SST/J201 SST/2N5485 SST/J202 Siliconix JFET Siliconix AN102 AN102 "Siliconix" "JFET" an102 siliconix 2N5484 J202 SST441 SST5484 matched pair JFET
transistor FN 1016

Abstract: siliconix fet siliconix FET DESIGN Siliconix FET Design Catalog Siliconix JFET Siliconix "fet" siliconix catalog ag2 transistor U311 Siliconix Application Note
Text: Siliconix incorporated 6-18 The following are representative ej»j, ¡n curves for Siliconix J-FET products , s Siliconix APPLICATION NOTE Audio-Frequency Noise Characteristics of Junction FETs INTRODUCTION , Hz. Therefore noise power due to Rq is ex2 _ 4kTRGB = 4kTB (2) © 1979 Siliconix incorporated 6-13 , followed in the © 1979 Siliconix incorporated 6-14 design of the Siliconix 2N4867A FET, and noise , © 1979 Siliconix incorporated 6-15 The curves in Figure 5 illustrate changes in eN as the operating drain


OCR Scan
PDF
siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: 5-25 2N5908 D N JFET 2N5908 3-41 5-29 © 1979 Siliconix incorporated 2-4 FET Cross Reference and Index , 2094M N JFET 2N3686 2-5 © 1979 Siliconix incorporated Cross Reference and Index (cont'd.) S Siliconix , -18 MPF970 P JFET J174 KE5105 N JFET K304-18 MPF971 P JFET J176 - © 1979 Siliconix , TD5911 D N JFET 2N5911 © 1979 Siliconix incorporated MO FET Cross Reference and Index , 2N5432 U424 D N JFET U424 3-64 5-23 © 1979 Siliconix incorporated 2-11 FET Cross Reference


OCR Scan
PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet e300 bfq13 E112 jfet BFW10 JFET e420 dual jfet JFET TIS88 Siliconix FET Design Catalog Siliconix JFET catalog
Text: infringement. Warning Regarding Life Support Applications Siliconix products are not sold for applications , Siliconix . Such agreement will require the equipment manufacturer either to contract for additional reliability testing of the Siliconix parts and/or to commit to undertake such testing as a part of its manufacturing process. In addition, such manufacturer must agree to indemnify and hold Siliconix harmless from any claims arising out of the use of the Siliconix parts in life support equipment. Stresses


OCR Scan
PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet e300 bfq13 E112 jfet BFW10 JFET e420 dual jfet JFET TIS88 Siliconix FET Design Catalog Siliconix JFET catalog
1999 - FET J202

Abstract: siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent J112 2N4392 2N4393 j112 fet
Text: ) Figure 9. JFET Source Biased Drain-Current vs. Source Resistance 4 Siliconix 10-Mar-97 AN103 , . Cascade FET Current Source Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70596. Siliconix 10-Mar-97 1 AN103 JFET may have a typical goss = 4 mS at VDS = 20 V and VGS = 0. At VDS ­VGS(off) = 2 V, goss 100 mS , goss. The Siliconix 2N4340, J202, and SST202 exhibit typical goss = 2 mS at VDS = 20 V. These devices


Original
PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 siliconix fet data book J113 equivalent CR180 datasheet j201 jfet J201 equivalent J112 2N4392 2N4393 j112 fet
2N5088 equivalent

Abstract: siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393
Text: design-oriented and can vary from 5 kHz to 50 kHz. Siliconix 10-Mar-97 AN106 Defining the JFET Noise , "analog world." Common JFET amplifier applications Siliconix 10-Mar-97 Contemporary JFETs have noise , impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET amplifiers exhibit dramatically lower noise figures. A close examination of bipolar and JFET specification , Source impedance effect on circuit NF. Defining the JFET Noise Figure Figure 1 represents the basic


Original
PDF AN106 2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393
1996 - 2N4393

Abstract: FET J202 siliconix fet j112 fet pn4117a FET J506 siliconix fet data book J112 jfet transistor j201 2n4339
Text: with temperature. Siliconix 07-Jul-94 All industry JFET part types exhibit a significant , Siliconix 07-Jul-94 AN103 Table 1: Source Biasing Device Recommendations Choosing the Correct JFET , . JFET Source Biased Drain-Current vs. Source Resistance Siliconix 07-Jul-94 5 Temic , Siliconix 07-Jul-94 or RS + V GS(off) ID 1­ ID I DSS RS ­ + VDD (2) Figure 2. Cascade FET Current Source 1 AN103 JFET may have a typical goss = 4 mS at VDS = 20 V and


Original
PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A 2N4393 FET J202 siliconix fet j112 fet pn4117a FET J506 siliconix fet data book J112 jfet transistor j201 2n4339
1999 - N CHANNEL jfet Low Noise Audio Amplifier

Abstract: jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs 2N4338 SST404
Text: design-oriented and can vary from 5 kHz to 50 kHz. Siliconix 10-Mar-97 AN106 Defining the JFET Noise , impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET amplifiers exhibit dramatically lower noise figures. A close examination of bipolar and JFET specification , Source impedance effect on circuit NF. Defining the JFET Noise Figure Figure 1 represents the basic circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The


Original
PDF AN106 N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs 2N4338 SST404
FET J202

Abstract: transistor j201 high impedance current sources -rs j112 fet 2N4393 siliconix fet Transistor J304 Siliconix 2n Siliconix FET 2N4392 siliconix fet data book
Text: Source Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70596. Siliconix 10-Mar-97 1 AN103 JFET may have a , Recommendations Choosing the Correct JFET for Source Biasing Each of the Siliconix device data sheets include , Siliconix 2N4340, J202, and SST202 exhibit typical goss = 2 mS at VDS = 20 V. These devices in the circuit , greater than 2 MW at 0.2 mA. Other Siliconix part types such as the 2N4392, J112, and SST112 can provide


Original
PDF AN103 PN4117A SST4117 2N4117A PN4118A SST4118 2N4118A PN4119A SST4119 2N4119A FET J202 transistor j201 high impedance current sources -rs j112 fet 2N4393 siliconix fet Transistor J304 Siliconix 2n Siliconix FET 2N4392 siliconix fet data book
1995 - siliconix - j201

Abstract: j201 jfet 2N4392 jfet cascade SST304 SST202 SST4119 J304 J202 J112
Text: ) AN103 Siliconix Choosing the Correct JFET for Source Biasing Table 1: Source Biasing Device , AN103 Siliconix The FET ConstantCurrent Source/Limiter Introduction The combination of , (2) RL RS - VDD + Figure 2. Cascade FET Current Source 1 AN103 Siliconix , goss. The Siliconix 2N4340, J202, and SST202 exhibit typical goss = 2 mS at VDS = 20 V . These , internal impedance greater than 2 MW at 0.2 mA. Other Siliconix part types such as the 2N4392, J112, and


Original
PDF AN103 SST112 2N4392 2N4393 SST/J113 2N4392, SST/J112 2N4393, SST/J113 siliconix - j201 j201 jfet 2N4392 jfet cascade SST304 SST202 SST4119 J304 J202 J112
1999 - P-Channel Depletion Mosfets

Abstract: shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
Text: junction formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reverse-biased the gate current is practically zero, whereas the base current of the bipolar transistor is always some value greater than zero. The JFET is a , Figure 1. FET Family Tree Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70594. Siliconix 10-Mar-97 1 AN101


Original
PDF AN101 P-Channel Depletion Mosfets shockley diode P-Channel Depletion Mode FET shockley diode application shockley diode datasheet n channel depletion MOSFET list of n channel fet jfet idss 10 ma vp -3 diode shockley P-Channel Depletion Mode Field Effect Transistor
1995 - transistor 2n5088 equivalent

Abstract: transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs siliconix fet transistor j201 Siliconix "low noise jfet"
Text: . (07/26/94) AN106 Siliconix Defining the JFET Noise Figure A noise factor (F) is a figure of , AN106 Siliconix LowNoise JFETs Superior Performance to Bipolars Introduction D , transducers, the JFET amplifiers exhibit dramatically lower noise figures. A close examination of bipolar and JFET specification and typical curves, along with circuit breadboarding, will startle most designers. Many currently available JFET devices offer ultralow noise performance over a wide range of


Original
PDF AN106 transistor 2n5088 equivalent transistor fn 1016 2N5088 equivalent N CHANNEL jfet Low Noise Audio Amplifier 2N5088 SIMILAR 2n930 equivalent JFETs Junction FETs siliconix fet transistor j201 Siliconix "low noise jfet"
P-Channel Depletion Mosfets

Abstract: DG189BP 0g190 CMJB DG189AR P-Channel Depletion JFET dg190
Text: SILICONIX INC Uül 89/190/19T 33E D ÔE54735 0Qlb3ö2 S High-Speed Drivers with Dual SPDT JFET , . JFET transistors and a bipolar driver (TTL compatible) to achieve fast and accurate swltch performance , St IN, V-Vr 5-34 DS XXIC 10530 9003 - SILICONIX INC _ll!conix incorporated 33E D ■à , 300 mA 5 DS XXIC 10530 9003 - 5-35 SILICONIX INC 33E D ■6554735 001b304 «SIX DG189/190/191 , Room Hot 0.06 t 100 5 100 5-36 DS XXIC 10530 9003 - SILICONIX INC 33E D ■Ö25M735 0Dlb3ÔS Q


OCR Scan
PDF 89/190/19T E54735 DG189-191 DG180 P-Channel Depletion Mosfets DG189BP 0g190 CMJB DG189AR P-Channel Depletion JFET dg190
P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
Text: n-channel JFET with the gate short-circuited to the source. The 12-2 Siliconix 10-Mar-97 AN101 In , junction formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reverse-biased the gate current is practically zero, whereas the base current of the bipolar transistor is always some value greater than zero. The JFET is a , Figure 1. FET Family Tree Updates to this app note may be obtained via facsimile by calling Siliconix


Original
PDF AN101 P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion mosFET n channel depletion MOSFET N-Channel JFET FETs Siliconix JFET application note list of n channel fet shockley diode p channel depletion mosfet
1996 - N CHANNEL jfet Low Noise Audio Amplifier

Abstract: transistor fn 1016 siliconix fet JFET APPLICATIONS JFETs Junction FETs jfets Siliconix AN106 jfet to 92 2n5088 transistor transistor equivalent table chart
Text: and can vary from 5 kHz to 50 kHz. Siliconix 26-Jul-94 AN106 Defining the JFET Noise Figure A , impedances as low as 5 kW . With higher source impedances, common in sensitive transducers, the JFET amplifiers exhibit dramatically lower noise figures. A close examination of bipolar and JFET specification , Source impedance effect on circuit NF. Defining the JFET Noise Figure Figure 1 represents the basic circuit identifying the equivalent noise sources en and in found in a JFET (or bipolar transistor). The


Original
PDF AN106 N CHANNEL jfet Low Noise Audio Amplifier transistor fn 1016 siliconix fet JFET APPLICATIONS JFETs Junction FETs jfets Siliconix AN106 jfet to 92 2n5088 transistor transistor equivalent table chart
1999 - application note jfet J111 transistor

Abstract: datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N
Text: field-effect transistor ( JFET ) under certain operating conditions, the resistance of the drain-source channel is a function of the gate-source voltage alone and the JFET will behave as an almost pure ohmic , nchannel JFET . Most amplification or switching operations of FETs occur in the constant-current (saturated , JFET Operating Characteristics Figure 2 shows an extension of the operating characteristics into the third quadrant for a typical n-channel JFET . While such devices are normally operated with a


Original
PDF AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 application note jfet J111 transistor datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N
1995 - P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
Text: . FET Family Tree (07/11/94) 1 AN101 Siliconix In addition to the channel material, a JFET , AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldeffect , formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reversebiased the gate current is practically zero, whereas the base current of the bipolar transistor is always some value greater than zero. The JFET is a


Original
PDF AN101 P-Channel Depletion Mode FET p channel depletion mosfet an101 siliconix N-Channel JFET FETs n channel depletion MOSFET JFETs Junction FETs list of n channel fet Junction FETs JFETs depletion Depletion MOSFET
jfet

Abstract: 2N4303 2N4381 Siliconix JFET Dual 2N4302 n channel 2n4393 to92 jfet p channel 2N3994 2n4267 dual P-Channel JFET
Text: ENH 5.0 300 3.0 30 30 2.5 0.7 MRA MFE823 18 ENH 6.0 - 3.0 - 20 25 6.0 1.5 MRA 7-14 Siliconix , Data Sheet Page Geometry Page 2N3909 P JFET 2N2IÌ08 2N4340 N JFET 2N4340 2N3909A P JFET 2N3909 2N4341 N JFET 2N4341 2N3921 D N JFET 2N3921 2N4352 P MOS ENH 3N163 2N3922 D N JFET 2N3922 2N4381 P JFET 2N2609 2N3954 D N JFET 2N3954 2N4382 P JFET 2N5115 2N3954A D N JFET 2N3954A 2N4391 N JFET 2N4391 2N3955 D N JFET 2N3955 2N4392 N JFET 2N4392 2N3955A D N JFET 2N3955A 2N4393 N JFET 2N4393


OCR Scan
PDF DPAD10 DPAD20 DPAD50 DPAD100 JPAD10 JPAD20 JPAD50 JPAD100 JPAD200 JPAD500 jfet 2N4303 2N4381 Siliconix JFET Dual 2N4302 n channel 2n4393 to92 jfet p channel 2N3994 2n4267 dual P-Channel JFET
1996 - p channel depletion mosfet

Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
Text: junction formed along the channel. Implicit in this description is the fundamental difference between JFET and bipolar devices: when the JFET junction is reverse-biased the gate current is practically zero, whereas the base current of the bipolar transistor is always some value greater than zero. The JFET is a , Figure 1. FET Family Tree Siliconix 11-Jul1­94 1 AN101 In addition to the channel material, a JFET contains two ohmic (non-rectifying) contacts: the source and the drain. These are shown in


Original
PDF AN101 p channel depletion mosfet list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor P-Channel Depletion Mosfets depletion p mosfet
1999 - J111 spice model

Abstract: Siliconix AN104 U310 2n4416 jfet datasheet jfet J111 transistor GASFET Siliconix J310 application note jfet J111 transistor PSpice 2N4416 Siliconix
Text: MODEL statement is the GASFET; otherwise it is the JFET . Introduction SPICE is the de facto , represents typical models of Siliconix FETs. However, we make no warranty, implied, expressed or otherwise , / 2 U421 2N5116 J176 Notes: a. These parameters are only important when modeling the JFET , negative VTO. When ALPHA and CDS are offered, the PSPice model used is the GASFET, not the JFET model , obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70597


Original
PDF AN104 2N5116 10-Mar-97 J111 spice model Siliconix AN104 U310 2n4416 jfet datasheet jfet J111 transistor GASFET Siliconix J310 application note jfet J111 transistor PSpice 2N4416 Siliconix
fet vcr compatible

Abstract: jfet transistor for VCR 2N5486 vcr application note jfet J111 transistor JFETs Junction FETs N-Channel JFET FETs PN4119A application note Siliconix JFET application note AN105 SST4119
Text: field-effect transistor ( JFET ) under certain operating conditions, the resistance of the drain-source channel is a function of the gate-source voltage alone and the JFET will behave as an almost pure ohmic , n-channel JFET . Most amplification or switching operations of FETs occur in the constant-current (saturated , JFET Operating Characteristics Figure 2 shows an extension of the operating characteristics into the third quadrant for a typical n-channel JFET . While such devices are normally operated with a


Original
PDF AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible jfet transistor for VCR 2N5486 vcr application note jfet J111 transistor JFETs Junction FETs N-Channel JFET FETs PN4119A application note Siliconix JFET application note AN105 SST4119
1995 - fet vcr compatible

Abstract: 2N5486 jfet idss 10 ma vp -3 jfet J111 transistor SST5486 SST4119 SST111 PN4119A J111 AN105
Text: AN105 Siliconix FETs As VoltageControlled Resistors A voltagecontrolled resistor (VCR) may , ( JFET ) under certain operating conditions, the resistance of the drainsource channel is a function of the gatesource voltage alone and the JFET will behave as an almost pure ohmic resistor. Maximum , nchannel JFET . Most amplification or switching operations of FETs occur in the constantcurrent (saturated , ) Figure 1. Typical NChannel JFET Operating Characteristics Figure 2 shows an extension of the


Original
PDF AN105 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible 2N5486 jfet idss 10 ma vp -3 jfet J111 transistor SST5486 SST4119 SST111 PN4119A J111 AN105
1996 - fet vcr compatible

Abstract: application note jfet J111 transistor jfet transistor for VCR SST111 PN4119A J111 AN105 2N5486 VCR4N 2N5486 vcr
Text: ) Figure 1. Typical NChannel JFET Operating Characteristics Siliconix 11-Jul-94 Figure 1 details typical operating characteristics of an nchannel JFET . Most amplification or switching operations of , fieldeffect transistor ( JFET ) under certain operating conditions, the resistance of the drainsource channel is a function of the gatesource voltage alone and the JFET will behave as an almost pure ohmic , characteristics into the third quadrant for a typical n-channel JFET . While such devices are normally operated


Original
PDF AN105 11-Jul-94 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible application note jfet J111 transistor jfet transistor for VCR SST111 PN4119A J111 AN105 2N5486 VCR4N 2N5486 vcr
Supplyframe Tracking Pixel