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CC1190EM915-RD Texas Instruments CC1190EM 915MHz Reference Design
PMP7870 Texas Instruments Hot Swap Controller Design
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CC1100E-CC1190EM-RD Texas Instruments CC1100E-CC1190EM 480MHz Reference Design

Siliconix FET Design Catalog Datasheets Context Search

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transistor FN 1016

Abstract: siliconix fet siliconix FET DESIGN Siliconix FET Design Catalog Siliconix JFET Siliconix "fet" siliconix catalog ag2 transistor U311 Siliconix Application Note
Text: followed in the © 1979 Siliconix incorporated 6-14 design of the Siliconix 2N4867A FET , and noise , derived from it. Readers are invited to refer to the Siliconix FET catalog for full geometry performance , depends upon the basic design of the FET , and upon the proximity of the drain current operating point to , /Cjss ratio is required. Recommended Siliconix FET types for such applications are the 2N4416 (NH , of 20 MHz for i^ computed via direct measurement of Rp for the Siliconix FET Type2N4117A. For


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siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Text: FET Design Catalog © 1979 Siliconix incorporated Printed In U.S.A. Siliconix incorporated reserves , Siliconix how to use the FET Cross Reference and Index The following examples Illustrate how the FET Cross , (Gate) VMOS (Vertical MOSFET) 1-1 © 1979 Siliconix incorporated FET Cross Reference and Index H , © 1979 Siliconix incorporated 2-2 FET Cross Reference and Index (cont'd.) n Siliconix , 2N5019 3-31 5-39 © 1979 Siliconix Incorporated FET Cross Reference and Index (cont'd.) ff


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PDF J-23548 K24123 i39-40i NZ3766 53-C-03 siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet e300 bfq13 E112 jfet BFW10 JFET e420 dual jfet JFET TIS88 Siliconix FET Design Catalog Siliconix JFET catalog
Text: Incorporated Printed in U.S.A. Siliconix Introduction Design Alternatives Data Sheets Geometry , Resistance = Junction to Case Thermal Resistance Siliconix How to Use the Sm all-Signal FET Cross R , infringement. Warning Regarding Life Support Applications Siliconix products are not sold for applications , Siliconix . Such agreement will require the equipment manufacturer either to contract for additional reliability testing of the Siliconix parts and/or to commit to undertake such testing as a part of its


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PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet e300 bfq13 E112 jfet BFW10 JFET e420 dual jfet JFET TIS88 Siliconix FET Design Catalog Siliconix JFET catalog
siliconix FET DESIGN

Abstract: FETs in Mixers Ed Oxner FET U310 Ed Oxner oscillator U310 Siliconix "fet" Ed Oxner siliconix DESIGN idea
Text: Siliconix incorporated 6-55 Design of a VHF Oscillator The important design considerations for best oscillator performance include using a FET with high forward transconductance, maintaining the gate at ground , FET . The FET chosen was the Siliconix U310, which has a forward transconductance value higher than 18 , 0.081 = 3.20 cm (1.26 inches) (4) i 1979 Siliconix incorporated 6-56 In the completed FET coaxial , o lb DESIGN IDEA High-Performance FETs In Low-Noise VHF Oscillators Ed Oxner Most communications


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L144CJ

Abstract: FET Input Amplifiers siliconix FET DESIGN "FET Input Amplifiers" "DUAL N-Channel JFET" AN74-3 dual jfet vhf Siliconix Dual N-Channel JFETs transistor fet N-Channel RF Amplifier U401
Text: pages). FET Input Instrumentation Amplifier +15 v L144CJ Instrumentation Amplifier 3-62 > 1979 Siliconix , monolithic dual n-channel JFETs designed for. ■Low Noise FET Input Amplifiers ■Low and , – Comparators XT Siliconix Performance Curves NNR See Section 5 BENEFITS • Minimum System Error and , Design Output Conductance < 2 jumho • Low Noise Â¥n = 6 nVA/fiz at 10 Hz Typical TO-71 See Section 7 , duration « Ta. Tß and Tq. 300í¿s; duty cycle < 3%. 3. CMRR bsÄsr] NNR NRL-D > 1979 Siliconix


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PDF U401-04) 200tiA L144CJ FET Input Amplifiers siliconix FET DESIGN "FET Input Amplifiers" "DUAL N-Channel JFET" AN74-3 dual jfet vhf Siliconix Dual N-Channel JFETs transistor fet N-Channel RF Amplifier U401
L144CJ

Abstract: siliconix FET DESIGN Dual Comparators fet input FET Input Amplifiers u402 CR043 FET-Input Operational Amplifiers AN743 VHF Op Amp U401-04
Text: monolithic dual n-channel JFETs designed for. ■Low Noise FET Input Amplifiers ■Low , – Comparators XT Siliconix Performance Curves NNR See Section 5 BENEFITS • Minimum System Error and , Amplifier Design Output Conductance < 2 jumho • Low Noise Â¥n = 6 nVA/fiz at 10 Hz Typical TO-71 See , . Tß and Tq. 300í¿s; duty cycle < 3%. 3. CMRR bsÄsr] NNR NRL-D > 1979 Siliconix incorporated 3-61 APPLICATIONS General Purpose FET Input Op Amp +15 V CR043 -15 V Typical Specs for General


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PDF U401-04) AN74-3) L144CJ L144CJ siliconix FET DESIGN Dual Comparators fet input FET Input Amplifiers u402 CR043 FET-Input Operational Amplifiers AN743 VHF Op Amp U401-04
2004 - Not Available

Abstract: No abstract text available
Text: SI7456DP FET , SILICONIX 100V, 25m 2 SI7456DP FET , SILICONIX 100V, 25m Q 3 SI7852DP FET , SILICONIX 80V, 17m Q 4 SI7852DP FET , SILICONIX 80V, 17m Q 5 SI7858DP FET , SILICONIX 12V, 3m Q 6 SI7858DP FET , SILICONIX 12V, 3m Q 7 SI7858DP FET , SILICONIX 12V, 3m Q 8 SI7858DP FET , SILICONIX 12V, 3m Q 9 SI7858DP FET , SILICONIX 12V, 3m Q 10 SI7858DP FET , SILICONIX 12V, 3m Q 11


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PDF SNVA074A AN-1299 LM5041 LM5101
PLUGGING BRAKING DIAGRAM

Abstract: Si9600EY SQFP-48 Complementary MOSFET Half Bridge si9600 PWM and Sense FET
Text: delayed to coincide with the FET saturation voltage detection delay. Siliconix 03-Dec-96 The current , complementary FET switching. 10 Pre-Release Information Siliconix 03-Dec-96 Si9600EY Reset zeroes , Lower Left D G S FET Lower Right Figure 4. Lower Recirculation Siliconix 03-Dec-96 11 , Path B FET Lower Right Figure 6. 12 Pre-Release Information Siliconix 03 , . Siliconix 03-Dec-96 13 Pre-Release Information Si9600EY FET Upper Right FET Upper Left


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PDF Si9600EY 03-Dec-96 PLUGGING BRAKING DIAGRAM SQFP-48 Complementary MOSFET Half Bridge si9600 PWM and Sense FET
siliconix FET DESIGN

Abstract: Siliconix FET Siliconix "fet" high voltage constant current source siliconix DESIGN idea 2N4340 high impedance current sources -rs 2N4869 2N4341 Siliconix design
Text: Siliconix DESIGN IDEA The FET Constant Current Source INTRODUCTION The combination of low associated operating voltage and high output impedance make the FET attractive as a constant current source. An adjustable current source may be built with a FET , a variable resistor and a small battery, Figure 1. For good thermal stability, the FET should be biased near the zero T.C. point.1 Field-Effect , shown in Figure 2. Cascade FET Current Source Figure 2 © 1979 Siliconix incorporated 6-49 Now, ID is


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PDF 2N4340 2N4341 siliconix FET DESIGN Siliconix FET Siliconix "fet" high voltage constant current source siliconix DESIGN idea high impedance current sources -rs 2N4869 Siliconix design
FET U310

Abstract: uhf amplifier design U310 U310 fet siliconix FET DESIGN Ed Oxner siliconix DESIGN idea u310 siliconix fet 652 h siliconix fet
Text: H Siliconix DESIGN IDEA Wideband UHF Amplifier with High-Performance FETs Ed Oxner INTRODUCTION A new freedom in UHF amplifier design is possible with high-performance "Super FETs" such as the Siliconix U310 Junction FET . Typical advantages include a closely-matched 75 ohm input for extremely low , /¿mho maximum) makes it possible to design an amplifier with wide bandwidth and good gain, since the figure of merit (gm/C) of the FET is 2.35 x 109 typical — higher than any other known UHF Junction FET


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1999 - application note jfet J111 transistor

Abstract: datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N
Text: dictated by the geometry of the FET . A device with a channel of small cross-sectional area will exhibit a high rDS(on) and a low IDSS. Thus a FET with high IDSS should be chosen where design requirements , is reduced to a point where the FET is no longer conductive, the maximum resistance is reached. The , Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70598. Siliconix 10-Mar-97 1 AN105 VGS = 0 V ID (mA) 3 Siliconix offers a family of n-channel FETs specifically intended


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PDF AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 application note jfet J111 transistor datasheet jfet J111 transistor fet vcr compatible jfet transistor for VCR VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs VCR2N
2N5088 equivalent

Abstract: siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393
Text: performance is a design requirement. The process geometry inherent to the FET governs the noise characteristics of product types derived from it. Readers are invited to refer to the Siliconix FET data sheet , . D S VIN Operating point considerations and minimizing noise figure. FET Under Test , amplifier Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70599. Siliconix 10-Mar-97 1 AN106 10­13 1/f n or


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PDF AN106 2N5088 equivalent siliconix FET AUDIO AMPLIFIER 2N5088 SIMILAR siliconix fet siliconix FET DESIGN transistor 2n5088 equivalent Siliconix AN106 Siliconix "low noise jfet" transistor FN 1016 transistor pn4393
1999 - bq2903

Abstract: schematic diagram 12V battery charger regulator TIP42 Application Note rayovac aaa rechargeable diode 1N4001 specifications rechargeable battery DOD alkaline battery charger 2N4403 diagram Rayovac aa nimh
Text: improve cycle life n Optional external FET drive, allowing higher current loads (bq2903 only) n , monitored cells VOP (Max) Status outputs External FET drive (DRV pin) 2 5.5V 1 No Charging , provide a DRV pin for external discharge FET control. The charging current can be extended to above , drop across R5. Low efficiency limits the suitability of this design to low-rate charging. R2, R3 , Load While Charging." Design example: Constant Current Charging: 300mA Given: VIN =12V, ICHG


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PDF U-512 bq2902/3 bq2902 bq2903 bq2902 schematic diagram 12V battery charger regulator TIP42 Application Note rayovac aaa rechargeable diode 1N4001 specifications rechargeable battery DOD alkaline battery charger 2N4403 diagram Rayovac aa nimh
Siliconix VMOS

Abstract: vmos vmos fet Siliconix Application Note AN76-3 VN46AF mosfet vn66af VMOS Transistor VN66AF AN79-31
Text: H Siliconix APPLICATION NOTE Driving VMOS Power FETs INTRODUCTION Using VMOS Power FETs you can , and suggests design methods to be used in order to obtain the performance from VMOS that you need , kept in mind while designing. With improper circuit design VMOS can oscillate. This oscillation can be , possible, especially leads associated with the gate of the FET . If it is not possible to have short leads , design of the circuit. +25 V A Typical VMOS Switching Circuit Figure 1 Dave Hoffman January 1979 When


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PDF AN79-3. AN76-3. Siliconix VMOS vmos vmos fet Siliconix Application Note AN76-3 VN46AF mosfet vn66af VMOS Transistor VN66AF AN79-31
1999 - N CHANNEL jfet Low Noise Audio Amplifier

Abstract: jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs 2N4338 SST404
Text: . Readers are invited to refer to the Siliconix FET data sheet curves for full device performance data , . D S VIN Operating point considerations and minimizing noise figure. FET Under Test , SST404/SST406 Updates to this app note may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70599. Siliconix 10-Mar-97 1 AN106 10­13 1/f n or , 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction


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PDF AN106 N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix JFET Dual Siliconix AN106 transistor equivalent table chart 2n930 equivalent JFETs Junction FETs 2N4338 SST404
fet vcr compatible

Abstract: jfet transistor for VCR 2N5486 vcr application note jfet J111 transistor JFETs Junction FETs N-Channel JFET FETs PN4119A application note Siliconix JFET application note AN105 SST4119
Text: dictated by the geometry of the FET . A device with a channel of small cross-sectional area will exhibit a high rDS(on) and a low IDSS. Thus a FET with high IDSS should be chosen where design requirements , is reduced to a point where the FET is no longer conductive, the maximum resistance is reached. The , Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70598. Siliconix 10-Mar-97 1 AN105 VGS = 0 V ID (mA) 3 Siliconix offers a family of n-channel FETs specifically intended


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PDF AN105 10-Mar-97 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible jfet transistor for VCR 2N5486 vcr application note jfet J111 transistor JFETs Junction FETs N-Channel JFET FETs PN4119A application note Siliconix JFET application note AN105 SST4119
fet third quadrant operation

Abstract: jfet transistor for VCR fet vcr compatible siliconix FET AUDIO AMPLIFIER n-channel jfet amplitude control 647 "photomultiplier" N-Channel JFET FETs sherwin VCR7N P channel Junction FET
Text: ., 1965. (7) J.S. Sherwin, "Voltage Controlled Resistors ( FET )," Solid State Design , pp. 12-14, Aug. 1965 , s Siliconix APPLICATION NOTE FETs As Voltage-Controlled Resistors INTRODUCTION The Nature of VCRs A , where the FET is no longer conductive, the maximum resistance is reached. The voltage at this point is , (on)> occurs at VGS = 0 and is dictated by the geometry of the FET . A device with a channel of small cross-sectional area will exhibit a high rpg(on) and a low Ipss- Thus a FET with High Iqss should be chosen where


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PDF AU-13, fet third quadrant operation jfet transistor for VCR fet vcr compatible siliconix FET AUDIO AMPLIFIER n-channel jfet amplitude control 647 "photomultiplier" N-Channel JFET FETs sherwin VCR7N P channel Junction FET
1995 - fet vcr compatible

Abstract: 2N5486 jfet idss 10 ma vp -3 jfet J111 transistor SST5486 SST4119 SST111 PN4119A J111 AN105
Text: = 0 and is dictated by the geometry of the FET . A device with a channel of small crosssectional area will exhibit a high rDS(on) and a low IDSS. Thus a FET with high IDSS should be chosen where design requirements indicate the need for a low rDS(on). 1 AN105 Siliconix ID (mA , AN105 Siliconix FETs As VoltageControlled Resistors A voltagecontrolled resistor (VCR) may , where the FET is no longer conductive, the maximum resistance is reached. The voltage at this point is


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PDF AN105 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible 2N5486 jfet idss 10 ma vp -3 jfet J111 transistor SST5486 SST4119 SST111 PN4119A J111 AN105
1996 - fet vcr compatible

Abstract: application note jfet J111 transistor jfet transistor for VCR SST111 PN4119A J111 AN105 2N5486 VCR4N 2N5486 vcr
Text: dictated by the geometry of the FET . A device with a channel of small cross-sectional area will exhibit a high rDS(on) and a low IDSS. Thus a FET with high IDSS should be chosen where design requirements , reduced to a point where the FET is no longer conductive, the maximum resistance is reached. The voltage , ) Figure 1. Typical NChannel JFET Operating Characteristics Siliconix 11-Jul-94 Figure 1 details , FET VCR is shown in Figure 4, the circuit for a voltage divider attenuator. 200 ID ID (mA


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PDF AN105 11-Jul-94 SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible application note jfet J111 transistor jfet transistor for VCR SST111 PN4119A J111 AN105 2N5486 VCR4N 2N5486 vcr
2003 - SI3456DV

Abstract: SI4420DY SI4874DY SUD50N03 lmt zener
Text: Application Report SLVA135 - MAY 2003 A Step-By-Step Design Approach to TPS2300/01/11/20/21/30 , much more easily than other hotswap controllers. This report uses a simple step-by-step design , the design procedure demonstrated in this report, the solutions with TPS23xx become simple. Contents 1 Design Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . 2 1.2 Design Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


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PDF SLVA135 TPS2300/01/11/20/21/30/31 TPS2300/01/10/11/20/21/30/31 TPS23xx SI3456DV SI4420DY SI4874DY SUD50N03 lmt zener
2011 - Not Available

Abstract: No abstract text available
Text: High-Speed GaAs FET Driver that Saves Power Vishay Siliconix maintains worldwide manufacturing capability , DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches , performance, the DG611, DG612, DG613 are built on the Vishay Siliconix proprietary D/CMOS process. This , capacitor filters GaAs FET drivers Satellite receivers FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION , , 31-Jan-11 www.vishay.com 1 DG611, DG612, DG613 Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM AND


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PDF DG611, DG612, DG613 DG613 DG611
2N4339

Abstract: sherwin 2N4339 Siliconix siliconix FET DESIGN rdbq
Text: s Siliconix TECHNICAL ARTICLE FET Biasing James Sherwin INTRODUCTION Engineers often design FET , room temperature. Then the design would take all types of variation into account. © 1979 Siliconix , turns out to be the same as that generally used with bipolar transistors, but its operation and design , used to establish a FET 's operating point (Q-point) and then see how two of them can be combined to , output voltage swings of ±7.0 V — a voltage gain of 35. Reprinted From ELECTRONIC DESIGN . May 24, 1970


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Not Available

Abstract: No abstract text available
Text: Figure 7. A High-Speed GaAs FET Driver that Saves Power Vishay Siliconix maintains worldwide , DG611, DG612, DG613 Vishay Siliconix High-Speed, Low-Glitch D/CMOS Analog Switches , Vishay Siliconix proprietary D/CMOS process. This process combines n-channel DMOS switching FETs with , capacitor filters GaAs FET drivers Satellite receivers FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION , -0154-Rev. I, 31-Jan-11 www.vishay.com 1 DG611, DG612, DG613 Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM


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PDF DG611, DG612, DG613 DG613 2011/65/EU
2012 - si4812b

Abstract: w11b VJ0402Y102KXACW1BC C25-12 TNPW0402100RBEED A 0412 MOSFET SiP12108 IHLP2525DZER1R0M01 SIP12107DB VJ0402A680
Text: SiP12107 www.vishay.com Vishay Siliconix 5 V, 3 A Current-Mode Constant On-Time Synchronous , FORTH AT www.vishay.com/doc?91000 SiP12107 www.vishay.com Vishay Siliconix CONDITIONS Reference , www.vishay.com Vishay Siliconix TEST CONDITION UNLESS OTHERWISE SPECIFIED VIN = AVIN = 3.3 V, TA = - 40 °C to , V 56 33 m Guaranted by design Guaranted by design VOUT = 1.2 V, RON = 100 k VFB TA = 0 °C to + 70 °C , www.vishay.com/doc?91000 SiP12107 www.vishay.com FUNCTIONAL BLOCK DIAGRAM Vishay Siliconix 7 2 6


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PDF SiP12107 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4812b w11b VJ0402Y102KXACW1BC C25-12 TNPW0402100RBEED A 0412 MOSFET SiP12108 IHLP2525DZER1R0M01 SIP12107DB VJ0402A680
2014 - Not Available

Abstract: No abstract text available
Text: SiP12109 www.vishay.com Vishay Siliconix 4 A, 4.5 V to 15 V Input Synchronous Buck , ?91000 SiP12109 www.vishay.com Vishay Siliconix ORDERING INFORMATION PART NUMBER PACKAGE MARKING , : Siliconix Logo + ESD Symbol Line 4: Factory Code + Year Code + Work Week Code + LOT Code ABSOLUTE , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiP12109 www.vishay.com Vishay Siliconix , ?91000 SiP12109 www.vishay.com Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM COMP VCC PGOOD EN VIN


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PDF SiP12109 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
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