The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
LT1057CN8 Linear Technology LT1057 - Dual JFET Input Precision High Speed Op Amps; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1122ACN8 Linear Technology LT1122 - Fast Settling, JFET Input Operational Amplifier; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1457CN8 Linear Technology LT1457 - Dual, Precision JFET Input Op Amp; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1792AIS8 Linear Technology LT1792 - Low Noise, Precision, JFET Input Op Amp; Package: SO; Pins: 8; Temperature Range: -40°C to 85°C
LT1055CN8#PBF Linear Technology LT1055 - Precision, High Speed, JFET Input Operational Amplifiers; Package: PDIP; Pins: 8; Temperature Range: 0°C to 70°C
LT1057S8#PBF Linear Technology LT1057 - Dual JFET Input Precision High Speed Op Amps; Package: SO; Pins: 8; Temperature Range: 0°C to 70°C

SiC jfet cascode Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
JFET siced

Abstract:
Text: applications. The lowest RDSon today is reached with a vertical JFET concept13 arranged in a cascode topology to overcome the normally-on characteristic of the SiC JFET . Fig. 10 shows a schematic of this , section of the used JFET structure is shown in Fig. 11. Source Gate SiC Schottky diode Drift , commutation current. Fig. 11: Cross section of the SiC JFET . n- 1600 8 I D Current (A) 4 , current flows via the gate of the JFET to the source electrode of the cascode . The low voltage MOSFET


Original
PDF
2011 - IJW120R070T1

Abstract:
Text: potential relative to its gate and keeping the JFET hence in the off-state. In this conventional cascode , SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C ™ 1200 V CoolSiCâ , ulti m ark et 1200 V Silicon Carbide JFET IJW120R070T1 Description CoolSiC™ is Infineon’s , properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher , . 2.0, <2013-09-11> Silicon Carbide JFET IJW120R070T1 Description Table of Contents Description


Original
PDF IJW120R070T1 IJW120R070T1 IJW120R silicon carbide
2011 - Not Available

Abstract:
Text: keeping the JFET hence in the off-state. In this conventional cascode , the LV MOSFET will be switched on , SiC - JF ET Silicon Carbide- Junction Field Effect Transistor Cool Si C ™ 1200 V CoolSiCâ , ulti m ark et 1200 V Silicon Carbide JFET IJW120R100T1 Description CoolSiC™ is Infineon’s , properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher , . 2.0, <2013-09-11> Silicon Carbide JFET IJW120R100T1 Description Table of Contents Description


Original
PDF IJW120R100T1
2014 - SiC JFET

Abstract:
Text: xJ SiC Series. 45mW - 1200V SiC Normally-On JFET . UJN1205K. Features CASE Low , high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON) and gate , 1200V SiC Normally-On JFET . UJN1205K. Electrical Characteristics (TJ = +25°C unless otherwise , Sales@unitedsic.com xJ SiC Series. 45mW - 1200V SiC Normally-On JFET . UJN1205K. Typical Performance - , SiC Normally-On JFET . UJN1205K. 10000 100 Drain Current, ID (A) Ciss 1000


Original
PDF UJN1205K. UJN1205K O-247 SiC JFET SiC jfet cascode ujn120
SiC-JFET

Abstract:
Text: combine a normally "on" high voltage SiC JFET in series with a low voltage normally "off" Si MOSFET. A , SBD SiC -4H GaN PIN Diode SiC -4H NA JFET / SIT NA SiC -4H, GaN MESFET SiC -4H NA BJT SiC , Gallium Nitride (GaN) versus Silicon Carbide ( SiC ) In The High Frequency (RF) and Power Switching , Carbide ( SiC ). There is a great deal of ongoing discussion and questions about Gallium Nitride (GaN) versus Silicon Carbide ( SiC ) material, the semiconductor devices which are possible and which device


Original
PDF
2008 - westinghouse transistors

Abstract:
Text: such as the 10-kV SiC MOSFET, JBS diodes, p-i-n diodes, 7-kV GTO thyristors, and an all-SiC cascode , IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 55, NO. 8, AUGUST 2008 1807 A 10-kV Large-Area 4H- SiC , presents the development and demonstration of large-area 10-kV 4H- SiC DMOSFETs that maintain a classically , interest for high-voltage (10+ kV) switching applications is the 4H- SiC DMOSFET because it combines the high-breakdown low specific on-resistance of the 4H- SiC drift region with the majority carrier operation of the


Original
PDF 10-kV westinghouse transistors
SJEP120R125

Abstract:
Text: device technology behind SemiSouth's enhancement-mode SiC JFET . The document also describes recommended , (EM) silicon carbide ( SiC ) Vertical Junction Field Effect Transistor ( JFET ) is a wide bandgap , architecture, the EM SiC JFET developed by SemiSouth Laboratories delivers best-inclass performance in both hard-switching and soft-switching applications. The EM SiC JFET is designed to be a replacement for MOSFETs and , body diode in the JFET structure. A SiC SBD can be copacked as required by the application to enable


Original
PDF
2008 - Not Available

Abstract:
Text: iGBt/PiN Diode Si GtO Si thyristor SiC MOSFet/ JFet /Schottky SiC PiN/iGBt/thyristor FIGURE 2 â , theoretical performance limitations of Si is the 5-kV SIAFET [11]. The SiC JFET is a majority carrier device , oxide reliability challenges of the SiC MOSFETs. The highest voltage SiC-based JFET demonstrated in a , © artville Opportunities and Challenges in Realizing the Full Potential of SiC Power Devices , effort is now underway to exploit the excellent properties of silicon carbide ( SiC ) for the realization


Original
PDF r1996, XVI-14.
2010 - JFET semisouth

Abstract:
Text: ADVANCED INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET , ADVANCED INFORMATION SiC JFET ASJD1200R085 ELECTRICAL CHARACTERISTICS Parameter OffCharacteristics , INFORMATION SiC JFET ASJD1200R085 Figure 1. Typical Output Characteristics ID = f(VDS); Tj = 25 , INFORMATION SiC JFET ASJD1200R085 Figure 13. Transient Thermal Impedance Zth(jc) = f(tP); parameter: Duty , specifications without notice. 5 ADVANCED INFORMATION SiC JFET ASJD1200R085 MECHANICAL DRAWING


Original
PDF ASJD1200R085 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R085 O-247 ASJD1200R085 JFET semisouth SEMISOUTH SiC JFET semisouth JFET
2011 - ASJD1200R085

Abstract:
Text: ADVANCE INFORMATION SiC JFET ASJD1200R085 Normally-ON Trench Silicon Carbide Power JFET , ADVANCE INFORMATION SiC JFET ASJD1200R085 ELECTRICAL CHARACTERISTICS Parameter OffCharacteristics , INFORMATION SiC JFET ASJD1200R085 Figure 1. Typical Output Characteristics ID = f(VDS); Tj = 25 , INFORMATION SiC JFET ASJD1200R085 Figure 13. Transient Thermal Impedance Zth(jc) = f(tP); parameter: Duty , specifications without notice. 5 ADVANCE INFORMATION SiC JFET ASJD1200R085 MECHANICAL DRAWING


Original
PDF ASJD1200R085 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R085 O-247 ASJD1200R085 SiC JFET JFET semisouth SEMISOUTH silicon carbide j-fet JFET semisouth Semisouth, SJDP120R085 silicon carbide JFET SJDP
2011 - ASJE1700R550

Abstract:
Text: ADVANCE INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET , ADVANCE INFORMATION SiC JFET ASJE1700R550 ELECTRICAL CHARACTERISTICS Parameter OffCharacteristics , without notice. 2 ADVANCE INFORMATION SiC JFET ASJE1700R550 Figure 1. Typical Output , the right to change products or specifications without notice. 3 ADVANCE INFORMATION SiC JFET , products or specifications without notice. 4 ADVANCE INFORMATION SiC JFET ASJE1700R550 Figure 13


Original
PDF ASJE1700R550 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 O-257 SiC JFET 3E05 JFET semisouth SEMISOUTH silicon carbide j-fet silicon carbide JFET SJEP170 SJEP
2010 - SJEP170R550

Abstract:
Text: ADVANCED INFORMATION SiC JFET ASJE1700R550 Normally-OFF Trench Silicon Carbide Power JFET , ADVANCED INFORMATION SiC JFET ASJE1700R550 ELECTRICAL CHARACTERISTICS Parameter OffCharacteristics , without notice. 2 ADVANCED INFORMATION SiC JFET ASJE1700R550 Figure 1. Typical Output , the right to change products or specifications without notice. 3 ADVANCED INFORMATION SiC JFET , products or specifications without notice. 4 ADVANCED INFORMATION SiC JFET ASJE1700R550 Figure


Original
PDF ASJE1700R550 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP170R550 O-247 ASJE1700R550 3E05 semisouth JFET JFET semisouth SEMISOUTH
2006 - Not Available

Abstract:
Text: limitations of Silicon, is the 5 kV SIAFET [10]. The SiC JFET is a majority carrier device type that does not , challenges of the SiC MOSFETs. The highest voltage SiC-based JFET demonstrated in a practical circuit , JFET region through, for example, n-type ion implantation. For very high voltage SiC DMOSFETs (>2 kV , Invited Paper Reliability and performance limitations in SiC power devices Ranbir Singh , and reliability issues unique to SiC discussed here include: (a) MOS channel conductance/gate


Original
PDF
2013 - Not Available

Abstract:
Text: Normally-ON SiC JFET VCC5P (VSS+5V) NS (0V) CHT-ATLAS CBSTA_T C5P VSS (-27V) CP_A PVCCA , HighZB INB The normally-ON SiC JFET is turned off once the gate-source voltage drops below the , (Last Modification Date) Driving a Normally-OFF SiC JFET VCC5P (VSS+5V) PVCC (+15V) PVCC2 , HighZA OUTNA ND Normally OFF SiC JFET NS (0V) Unlike the normally-on JFET , the gatesource junction of the normally-off SiC JFET is forward biased in the device conduction state. In addition to


Original
PDF 12-Nov-13 DS-100781
2010 - JFET semisouth

Abstract:
Text: ADVANCED INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET , INFORMATION SiC JFET ASJE1200R063 ELECTRICAL CHARACTERISTICS Parameter OffCharacteristics , without notice. 2 ADVANCED INFORMATION SiC JFET ASJE1200R063 Figure 1. Typical Output , products or specifications without notice. 3 ADVANCED INFORMATION SiC JFET ASJE1200R063 Figure 7 , ) ASJE1200R063 Rev. 0.0 12/10 4 ADVANCED INFORMATION SiC JFET ASJE1200R063 Figure 13. Switching Energy


Original
PDF ASJE1200R063 O-257 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 JFET semisouth SiC JFET SEMISOUTH sjep120r0
2012 - igbt welding machine scheme

Abstract:
Text: efficient CoolMOSTM technology or the revolutionary SiC JFET technology together with Digital Power Control , , as does our 3rd generation SiC diodes. For synchronous rectification we recommend our OptiMOSTM , stage our third generation of SiC Schottky barrier diode offers best cost-performance ratio in the , with our range of high voltage MOSFETs and SiC Schottky barrier Diodes and Driver ICs as well as our , ( SiC Diode), CoolSiC, IGBTs, IGBT modules, Eice DRIVERTM, controller & meter ­ to deliver the best


Original
PDF
2010 - JFET semisouth

Abstract:
Text: ADVANCED INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET , without notice. 1 ADVANCED INFORMATION SiC JFET ASJD1200R045 ELECTRICAL CHARACTERISTICS , or specifications without notice. 2 ADVANCED INFORMATION SiC JFET ASJD1200R045 MECHANICAL , notice. 3 ADVANCED INFORMATION SiC JFET ASJD1200R045 DOCUMENT TITLE Normally-ON Trench Silicon Carbide Power JFET Rev # 0.0 History Initial Release Release Date December 2010 Status Advanced


Original
PDF ASJD1200R045 O-257 260oC MIL-PRF-19500 MIL-STD-750 O-257 SJDP120R045 O-247 ASJD1200R045 JFET semisouth SiC JFET 5A JFET SEMISOUTH SJDP
2010 - JFET semisouth

Abstract:
Text: SiC JFET ASJE1200R100 ProductSummary 1200 0.100 170 V : J BVDS RDS(ON)max ETS,typ D (2,4 , SiC JFET ASJE1200R100 Value Typ 100 300 1 10 0.1 0.1 ELECTRICAL CHARACTERISTICS Parameter , () SiC JFET ASJE1200R100 Figure 8. Drain-Source On-resistance RDS(ON) = f(IGS); Tj = 25oC RDS(on , Energy (uJ) 250 200 150 100 50 0 2 6 10 ID, Drain Current (A) 14 18 EOFF Tj = 25oC Tj = 150oC SiC JFET , notice. 5 ADVANCED INFORMATION MECHANICAL DRAWING SiC JFET ASJE1200R100 ORDERING


Original
PDF O-257 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 JFET semisouth SEMISOUTH SiC JFET
2011 - ASJE1200R100

Abstract:
Text: SiC JFET ASJE1200R100 ProductSummary 1200 0.100 170 V : J BVDS RDS(ON)max ETS,typ D (2,4 , () SiC JFET ASJE1200R100 Figure 8. Drain-Source On-resistance RDS(ON) = f(IGS); Tj = 25oC RDS(on , ) 250 200 150 100 50 0 2 6 10 ID, Drain Current (A) 14 18 EOFF Tj = 25oC Tj = 150oC SiC JFET , notice. 5 ADVANCE INFORMATION MECHANICAL DRAWING SiC JFET ASJE1200R100 , notice. 6 ADVANCE INFORMATION SiC JFET ASJE1200R100 DOCUMENT TITLE Normally-OFF Trench


Original
PDF O-258 260oC MIL-PRF-19500 MIL-STD-750 ASJE1200R100 SJEP120R100 O-247 ASJE1200R100 O-257 JFET semisouth SiC JFET SEMISOUTH semisouth sjEp120R100 silicon carbide JFET SJEP120
2011 - ASJE1200R063

Abstract:
Text: ADVANCE INFORMATION SiC JFET ASJE1200R063 Normally-OFF Trench Silicon Carbide Power JFET , INFORMATION SiC JFET ASJE1200R063 ELECTRICAL CHARACTERISTICS Parameter OffCharacteristics , without notice. 2 ADVANCE INFORMATION SiC JFET ASJE1200R063 Figure 1. Typical Output , products or specifications without notice. 3 ADVANCE INFORMATION SiC JFET ASJE1200R063 Figure 7 , ) ASJE1200R063 Rev. 0.1 06/11 4 ADVANCE INFORMATION SiC JFET ASJE1200R063 Figure 13. Switching Energy


Original
PDF ASJE1200R063 O-258 260oC MIL-PRF-19500 MIL-STD-750 SJEP120R063 O-247 ASJE1200R063 O-257 SiC JFET JFET semisouth SJEP120 SEMISOUTH silicon carbide JFET sjep120r0
2011 - ASJD1200R045

Abstract:
Text: ADVANCE INFORMATION SiC JFET ASJD1200R045 Normally-ON Trench Silicon Carbide Power JFET , without notice. 1 ADVANCE INFORMATION SiC JFET ASJD1200R045 ELECTRICAL CHARACTERISTICS , or specifications without notice. 2 ADVANCE INFORMATION SiC JFET ASJD1200R045 MECHANICAL , the right to change products or specifications without notice. 3 ADVANCE INFORMATION SiC JFET ASJD1200R045 DOCUMENT TITLE Normally-ON Trench Silicon Carbide Power JFET Rev # 0.0 0.1 History Initial


Original
PDF ASJD1200R045 O-258 260oC MIL-PRF-19500 MIL-STD-750 O-258 SJDP120R045 O-247 ASJD1200R045 SiC JFET JFET semisouth silicon carbide JFET silicon carbide j-fet SEMISOUTH semisouth JFET VGS15V TO258
2012 - Not Available

Abstract:
Text: many ways to implement a SiC switch, two are gaining prevalence, SiC MOSFET and JFET . The MOSFET , New Power Semiconductor Module Combines MNPC Topology with SiC Switches Kuno Straub, Product , silicon switches and the other with SiC (silicon carbide) switches. Vincotech flowMNPC 0 modules in 12mm , applications, solar inverters and uninterruptible power supplies (UPS). Figure 1: MNPC topology with SiC JFET MNPC topology is a variant of three-level topology. The MNPC topology and the standard NPC


Original
PDF 30-kW 30-kW, SJEP120R100,
SiC JFET

Abstract:
Text: to accommodate for Normally Off SiC JFET as well as a pre-driver for an external active Miller , Normally-On SiC JFET Transistors) VDC (600V) NS (0V) PVCC VCC RUVLO3 CHT-THEMIS VCC , ) PVCCB CP_B VCC5PB (input) OUTB +5V Linear Voltage Reg Normally ON SiC JFET NG , ON SiC JFET NG ND Iref RHIST Cboost Desat Comparator + CVCC BOOST , output is used to drive Normally-Off SiC JFET . It generates a short pulse triggered by rising edge on IN


Original
PDF 17-Feb-11 DS-100759 SiC JFET normally off sic jfet silicon carbide j-fet silicon carbide JFET normally on ac-dc wind turbine control SOIC28 NMOS4005 RD22 RD12 RD11
2012 - Not Available

Abstract:
Text: ‚· Allows user to have a single supply voltage and smaller footprint Better utilization of SiC JFET , PRELIMINARY PRODUCT BRIEF (Subject to change) LX1780 SiC Enhancement Mode Silicon Carbide JFET and Bipolar Transistors Driver DESCRIPTION The LX1780 is an extremely fast-switching Gate driver IC for driving normally-off silicon carbide JFET switches. It replaces several components , ‚· Drives discrete and modular SiC Vertical JFETs Drives SiC Bipolars Rack-mount power systems High-power


Original
PDF LX1780 LX1780
2012 - Not Available

Abstract:
Text: www.microsemi.com  SiC JFET and SiC Schottky diode are from www.microsemi.com 1–4 , Phase leg SiC Power Module Application     Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control Features   SiC JFET, Normally off (8 * SJEC120R100 in parallel per switch) SiC Schottky Diode (2 * SDC30S120 in parallel per , JFET ) Drain-source shorted, f= 1MHz 1.5  Vth Threshold Voltage VDS = 1V, IDS = 300


Original
PDF APTJC120AM13VCT1AG SJEC120R100 SDC30S120
Supplyframe Tracking Pixel