The Datasheet Archive

Top Results (6)

Part Manufacturer Description Datasheet Download Buy Part
STK534U363C-E ON Semiconductor 3 PHASE INVERTER IPM
ST-IPM-6350 Red Lion Controls SIXTRAK IPM 2MRAM,64MDRAM
BP7B-LB Powerex Power Semiconductors KIT DEV INTERFACE FOR IPM
BP7A-LS Powerex Power Semiconductors KIT DEV INTERFACE FOR IPM
PS9513-AX California Eastern Laboratories (CEL) PHOTOCOUPLER IPM GATE DVR 8DIP
BP7B-LS Powerex Power Semiconductors KIT DEV INTERFACE FOR IPM

SiC IPM Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2012 - BM60011FV-C

Abstract: N mosfet 50v 400A SiC IPM Inverters for EV coreless transformer Technology SSOP-B20W 201MAX vtsin BM6103 ISOLATED GATE DRIVER
Text: S FLT INA ENA MASK LOGIC OUT2 Q OFF MASK FLT2 Conditions: (ROHM SiC IPM ) Vcc1 , are included, reducing design load while contributing to smaller inverters for EVs and HEVs. SiC utilized for high-speed operation Stable driving guaranteed up to 800V/400A output IPM Drive Waveforms , transformer technology enables an isolation voltage of 2500Vrms Soft Turn-OFF (@SCP) SiC FET d BM6103FV-C g BUF s 5V 2µs/div. SiC SBD GND1 PROOUT IN (10V / div.) Vgs (20V/div.) Vds (500V


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PDF 500Vrms BM6103FV-C SSOP-B20W 00V/400A 54F6603E BM60011FV-C N mosfet 50v 400A SiC IPM Inverters for EV coreless transformer Technology SSOP-B20W 201MAX vtsin BM6103 ISOLATED GATE DRIVER
mosfet based power inverter project

Abstract: MS 1307 mosfet mosfet ms 1307 mitsubishi sic MOSFET igbt based high frequency inverter 10KV SiC NATIONAL IGBT Mitsubishi SiC IPM module home made inverter "silicon carbide" FET
Text: ( SiC Devices) IPM Introduction by Mitsubishi Reduction of IGBT operation losses 1985 1st Gen , Present Status And Future Prospects of SiC Power Devices Present Status And Future Prospects of SiC Power Devices Contributors : Gourab Majumdar Chief Engineer, Power Device Works, Mitsubishi , Motto Principal Application Engineer, Powerex Inc., U.S.A. Tatsuo Ozeki Project Manager, SiC , Center, Mitsubishi Electric Corporation, Japan Abstract: At Mitsubishi, R & D work on SiC Power


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mosfet base induction heat circuit

Abstract: power IGBT MOSFET GTO SCR diode mitsubishi sic MOSFET skiip 33 ups 063 IGCT mitsubishi Cree SiC MOSFET igbt induction heating generator SiC BJT zvs zcs induction heating igbt Heatsink For stud devices - Semikron
Text: associated with new power semiconductor materials, i.e. SiC High Heat Flux Applications in Power , ( IPM ) Gate Drive & Protection Integrated Application Specific IPM System in a Package High , switch package · Protection for: IPM V1 + CIN FO Logic level · Overtemperature control · , Reduction 600V 150A Servo Motor Controller IPM Reduced cell pitch & increased density results in , Conventional IPM Current Sensor Rectifier Optocouplers · · · · · Small Servo Drives Pumps


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2012 - Not Available

Abstract: No abstract text available
Text: 878067-145 andreas.johannsen@vincotech.com VINCOTECH RELEASES NEW IPM SOLUTION - This new IPM solution , flowIPM 1B. This new compact intelligent power module ( IPM ) integrates power semiconductors for rectifier , comes in a 17-mm high flow 1B housing measuring just 72 mm by 36 mm. Unlike most other IPM designs , equipped with a highly efficient SiC diode. Other options such as pressfit technology or phase-change


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2011 - Not Available

Abstract: No abstract text available
Text: Power Modules Intelligent Power Module ( IPM ) with optional PFC New flowIPM family with integrated driver circuit and shunt resistors. flowIPM 1B housing 72 x 36 x 16 mm General Features: • Output power at 230V input: up to 2kW • 1~ Rectifier, 3~ Inverter • Optional PFC circuit with Si or SiC boost diode • Integrated gate drivers with complete bootstrap circuit â , : 600V/4A PFC: 600V/350mΩ + SiC Diode 1B06IPA010MF 2kW 50 – 100 kHz Inverter 600V/10A


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PDF Dec-11 1B06INA004SA 00V/4A 1B06INA010SA 00V/10A 1B06IPA004MF 100kHz 00V/350mâ 1B06IPA004MC
2015 - mosfet equivalent

Abstract: mosfet base inverter with chargers circuit SKiiP 83 AC 12 i t 46 fy074pa SKIIP 33 UPS 06 V23990-P769-A-PM 25AC12T4v semikron skiip 83 SKiiP 31 AC 12 T2
Text: Power Modules ( IPM ), Power Integrated Modules (PIM, a combination of input rectifier, inverter and , IPM PFC Booster 1~Solar NPC MNPC 113 – 125 127 – 129 131 132 04 Housing , stray inductance (half-bridge, h-bridge, sixpack, rectifier, PIM (CIB), PIM with PFC, IPM , PFC , manufacturers for semiconductor switches (IGBT, MOSFET, Thyristor, driver) and diodes on Si and SiC , semiconductor manufacturers (inclu ding SiC technology). / Enjoy the mechanical flexibility that comes


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2014 - Not Available

Abstract: No abstract text available
Text: be compact and to have good thermal characteristics. Different IPM concepts are competing with , of the current mega trends in power electronics. Very popular are Intelligent Power Modules ( IPM , application, an IPM can bring a lot of unique benefits. Transfer Molded IPMs Very often IPMs are produced , . Fig. 2: IPMs in Thick Film Technology One thick film based IPM is the flowIPM from Vincotech. It , equipped with a SiC diode. This enables PFC switching frequencies > 200 kHz. With higher switching


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2011 - Not Available

Abstract: No abstract text available
Text: Engineer Vincotech GmbH The ubiquitous Intelligent Power Module, aka IPM , has been a mainstay in motor , package, and high-volume components, and given an automated production line, the IPM has all the , . Vincotech has a new IPM module platform that incorporates all these sections - the flowIPM-1B. It is a , diode-based P953A and SiC boost diode-based P953-A10 both contain a 600V/4A/350mΩ PFC mosfet, utilize a , and SiC boost diode-based P955-A10 use a 600V/10A/190mΩ mosfet alongside a 600V/10A IGBT six-pack


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10KV SiC

Abstract: POWEREX DIP-IPM igbt circuit for induction melting westinghouse transistor cross reference induction heating 30khz Induction Heating Inverter melting Mitsubishi SiC IPM module igbt module catalog general product Powerex ipm based three phase ups design speed control of 1 phase induction motor by using scr
Text: isolation of control signals and isolated power supplies for the IPM 's built-in gate drive and protection , external components. BP7A BP7B 4 See Line-Up on page 5. L-Series IPM Line-Up and Interface , an interface between the controller and Powerex IPM design kits, the BCIM board provides PWM signals , capable modules for evaluation of high-voltage silicon carbide ( SiC ) devices for research and development , for SCRs & IGBTs. However, due to different material properties, power devices fabricated from SiC


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IGBT based voltage source converter

Abstract: matrix converter bi-directional switches IGBT inverters circuit diagram igbt diode matrix diagram "bi-directional switches" IGBT SiC IPM inverter circuit using IGBT module diode gen 52 Mitsubishi SiC IPM module
Text: ( DIP IPM ) 1 HEV Inverter ( EV IPM ) -purpose Inverter Gen ( IPM ) -purpose Inverter Gen ( Bipolar ) 0.1 0.01 1980 1990 Note: IPM : Intelligent Power Module DIP-IPM: Dual In-line Package IPM EV-IPM: IPM for EV and/or HEV applications RB-IGBT: Reverse Blocking type IGBT RC-IGBT , SiCApplication SiC Application · Integration Technology · New Packaging Technologies 2020 II. TARGET


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2008 - tyco igbt module 25A

Abstract: 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
Text: controlled rectifier CooIMOSTM + SiC Diode CooIMOSTM + SiC Diode half controlled rectifier PFC-IPM W , flow 0 height*: length: width: 17 mm 66 mm 33 mm flyer IPM height*: length: width


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PDF Vincotech-012-0508 ISO9001 TS16949 tyco igbt module 25A 2kw pfc tyco igbt module 25A 1200V mosfet 600V 60A MOSFET 1200v 30a mosfet 600V 30A 2kw mosfet mosfet 1200V 40A V23990-P600-I19-PM IGBT Transistor 1200V, 25A
Westinghouse thyristor

Abstract: westinghouse DIODES westinghouse thyristor drive WESTINGHOUSE dc motor westinghouse power rectifiers WESTINGHOUSE RECTIFIERS mitsubishi sic MOSFET WESTINGHOUSE ELECTRIC Westinghouse diode SiC IGBT High Power Modules
Text: ) DIPIPMTM (Dual-In-Line Package IPM ) Accessories At Powerex, your success is our success. ­ ­ ­ ­ , Modules (IPMs) is available. With this line-up, which includes the only 600A IPM on the market, Powerex , capabilities Unmatched packaging expertise ­ Extensive SiC multichip module packaging experience ­


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2011 - Not Available

Abstract: No abstract text available
Text: SiC MOSFETs. The ZXGD3006E6 can drive typically 4A into the low gate impedance of an IGBT, with , driving >500W PSU Telecom & Server PSU Motor Drive Industrial motors Intelliegent Power Module ( IPM


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PDF ZXGD3006E6 ZXGD3006E6 upto10
2013 - Not Available

Abstract: No abstract text available
Text: : up to 2 x ±2A @ ( SiC ) devices including normally-On and 225°C normally-Off JFETs, MOSFETs , devices that require for instance a dynamic pulse of current in  Intelligent Power Modules ( IPM , Normally-ON SiC JFET VCC5P (VSS+5V) NS (0V) CHT-ATLAS CBSTA_T C5P VSS (-27V) CP_A PVCCA , ) CPVCC VSS (-27V) CBSTA HS_A RGPA OUTPA NG CBSTA_B SSDA HighZA ND Normally ON SiC , HighZB INB The normally-ON SiC JFET is turned off once the gate-source voltage drops below the


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PDF 12-Nov-13 DS-100781
SS452

Abstract: R38BF8A FC 0137 MO201
Text: 140 fC "B" euffix - - 170 IpM Peek reverse current - - 75 •A Tj = 125°C. Hax. rated Vr , : UB LE SIC E COOLEt y „"l 5 10-3 5 ID"2 5 IO'1 5 ioÂ


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PDF R38BF R38BF8A. D0-200AB E1017 SS452 R38BF8A FC 0137 MO201
1997 - CTMC

Abstract: IMB microprocessor HC11 prescaler 256
Text: .8-4 8.3.3 Input period measurement ( IPM ) mode , .8-20 8.7.2 IPM mode example


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2000 - f7103

Abstract: FREE F7103 F738 f758 CTMC 0bxx001010 MC68HC16 MC68377 MC68300 F7103 ic
Text: a channel operating in IC mode, the IN bit in the SIC register reflects the logic state of the , , OCT or OP mode, the IN bit in the SIC register reflects the logic state of the output of the output , channel's SIC register, then write a zero to the FLAG bit. These two steps do not have to be done on , logic level on the input pin can be read by software via the IN bit in the channel's SIC register. In , the channel's 16-bit data register. At the same time, the FLAG bit in the SIC register is set to


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PDF MC68300 CPU32) MC68HC16 CPU16) 16-bit MC68377 f7103 FREE F7103 F738 f758 CTMC 0bxx001010 MC68HC16 MC68377 MC68300 F7103 ic
2000 - sic 13.48

Abstract: MC68300 MC68F375 MC68HC16 CTMC sasm Motorola F244 13842 pwm F218
Text: . Output port (OP) NOTE For a channel operating in IC mode, the IN bit in the SIC register reflects the , channel is operating in OC, OCT or OP mode, the IN bit in the SIC register reflects the logic state of , , the software must first read the channel's SIC register, then write a zero to the FLAG bit. These two , 's SIC register. In IC mode, the input pin is Schmitt triggered and the input signal is synchronized to , latched into the channel's 16-bit data register. At the same time, the FLAG bit in the SIC register is


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PDF MC68300 CPU32) MC68HC16 CPU16) 16-bit MC68F375 sic 13.48 MC68300 MC68F375 MC68HC16 CTMC sasm Motorola F244 13842 pwm F218
2011 - CHT-TIT9570A

Abstract: sic normally on fet
Text: ( SiC ) devices including normally-On and normallyOff JFETs, MOSFETs and BJTs. It is also used with , includes a pulse generation pre-driver to accommodate for Normally Off SiC JFET. CHT-THEMIS also features , lockout Applications Intelligent Power Modules ( IPM ) Power conversion, power generation and , node IN. Output of Pre-driver B (5V/250mA output buffer) This output is used to drive Normally-Off SiC , ; respect to ND node for Programmable with external 2.5 Normally On SiC JFET resistors RD11, RD12 with the 7


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PDF 22-Apr-11 DS-100782 CHT-TIT9570A sic normally on fet
7MBP75TEA060

Abstract: AC2500 ED-4071 IR igbt gate driver ic chips Tepm ei-33250
Text: , only the detected arm stops its output. At that time the IPM outputs detected arm's alarm. (2) When a fault is detected at the low side, all the lower arms stop their outputs and the IPM outputs an alarm of , between the optical isolators and the IPM input terminals as possible. 2. Mount a capacitor between Vcc , between the IPM and its heat sink to reduce the thermal contact resistance. 12. Finish the heat sink , flatness is minus, the heat radiation becomes worse due to a gap between the heat sink and the IPM . And, if


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PDF MS6M0602 H04-004-07a H04-004-03 7MBP75TEA060 AC2500 ED-4071 IR igbt gate driver ic chips Tepm ei-33250
2014 - Not Available

Abstract: No abstract text available
Text: is able to drive normallyOn and normally-Off power transistors in Silicon Carbide ( SiC ), Gallium , ( IPM ). ▲ Motor drives. ▲ Uninterruptible power supplies (UPS). ▲ Power inverters. ▲ Power , CBST2_HS BST_DR1_P CBST1_HS BST_DR1_N Driving SiC MOSFET VCC_HS VCC VCC_B C_MC , VSS_HS PU_DR1_2 RPU2_HS RSNS_G_HS RPD_HS SiC MOSFET VDD_HS VCC_HS GND(0V , PU_DR1_2 RPU2_LS RSNS_G_LS RPD_LS SiC MOSFET VDD_LS (0V) VDD_OUT GND(0V) S_LS


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PDF XTR26010 DS-00390-13
bzv16c

Abstract: 18516 16c68 bzv 40 DEZ18516 BZV16C3V3 BZV16C200 BZV18 bzv 4v7 e6v2
Text: -37) Marking : clear, ring at cathode end Marquage en clair, anneau coté cathode 88 S G S—THOMSON SIC D , ,9 1 Fig. 8 • Peak forward current IpM versus peak forward voltage drop VpM (typical values) at


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PDF D54MM BZV16C3V3 BZV16C200 bzv16c 18516 16c68 bzv 40 DEZ18516 BZV16C3V3 BZV16C200 BZV18 bzv 4v7 e6v2
2003 - DAC888FX

Abstract: DAC888EX DAC-888 DBL 1011 8048 microprocessor OAC-888 DAC888 Precision Monolithics DAC-08 DBJ 1
Text: ~ - - -""'- - IPM !) DAC-888 BYTEDAC'" 8-BIT HIGH-SPEED "MICROPROCESSOR COMPATIBLE" MUL TIPL , x 255 ut reference current. The reference current may be fixed SIC UNIPOLAR NEGATIVE OPERATION , , Rev. 8 IPM !) RECOMMENDED DAC-888 BYTEDAC<1I8-BIT HIGH-SPEED "MICROPROCESSOR COMPATIBLE , +15V 11-111 - 7/89, Rev. B IPM !) DAC-888 BYTEDAC'" 8-BIT HIGH-SPEED


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PDF DAC-888 DAC-08 Monotoni02 DAC888FX DAC888EX DBL 1011 8048 microprocessor OAC-888 DAC888 Precision Monolithics DAC-08 DBJ 1
1997 - CTMC

Abstract: CPU32RM HC11 toggle flip flop ic
Text: .8-4 8.3.3 Input period measurement ( IPM ) mode , .8-20 8.7.2 IPM mode example


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Not Available

Abstract: No abstract text available
Text: o lta g e until th e o u tp u t signal s h o w a T H D = 1 0 % 5) T h e m u sic p o w e r is th e n , . Supply Voltage m I p Li~l4 Figure 17: Ipm (St-By) vs. Supply Voltage s (131 T D f i 7 2 4 5 - 1


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PDF TDA7245 100Hz) TDA7245 A7245
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