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Part Manufacturer Supplier Stock Best Price Price Each Buy Part
SI9936DY Fairchild Semiconductor Corporation Rochester Electronics 402 $0.54 $0.44
SI9936DY Vishay Siliconix Bristol Electronics 2,500 $1.13 $0.29
SI9936DY-T1 SILI Bristol Electronics - -
SI9936DY-T1 Vishay Siliconix Bristol Electronics 3,695 $1.13 $0.29

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Si9936DY datasheet (11)

Part Manufacturer Description Type PDF
SI9936DY Fairchild Semiconductor Dual N-Channel Enhancement Mode MOSFET Original PDF
Si9936DY Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
SI9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
SI9936DY Siliconix Dual N-Channel Enhancement-Mode MOSFET Original PDF
Si9936DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
SI9936DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Dual, Pkg Style SO-8 Scan PDF
SI9936DY,518 Philips Semiconductors FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 5A SOT96-1 Original PDF
SI9936DY-DS Vishay Telefunken DS-Spice Model for Si9936DY Original PDF
SI9936DY_NL Fairchild Semiconductor Dual N-Channel Enhancemnt Mode MOSFET Original PDF
Si9936DY SPICE Device Model Vishay Dual N-Channel 30-V (D-S) MOSFET Original PDF
SI9936DY-T1 Vishay Intertechnology Dual N-Channel 30-V (D-S) MOSFET Original PDF

Si9936DY Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
Si9936BDY

Abstract:
Text: Replaces Si9936DY Si9936BDY-E3 (Lead (Pb)-free version) Replaces Si9936DY Si9936BDY-T1 Replaces Si9936DY-T1 Si9936BDY-T1-E3 (Lead (Pb)-free version) Replaces Si9936DY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si9936BDY Si9936DY Drain-Source Voltage , Specification Comparison Vishay Siliconix Si9936BDY vs. Si9936DY Description: Dual N-Channel , Min Typ Si9936DY Max Min 3.0 Typ Max 1.0 Unit Static VGS(th


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PDF Si9936BDY Si9936DY Si9936BDY-E3 Si9936BDY-T1 Si9936DY-T1 Si9936BDY-T1-E3
Not Available

Abstract:
Text: Temic Siliconix 9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary Vd s OO 30 rDS(on) (Q ) 0.050 @ VGS = 10 V 0.080 @ VGs = 4.5 V Id (A) ± 5.0 ±3.9 Di Di SO-8 ~ 8~l D] D2 D2 , -34118- Rev. C (04/04/94) Preliminary 1-51 LITTLE FOOT Tem ic 9936DY Specifications (Tj = 25 , 9936DY Typical Characteristics (25°C Unless Otherwise Noted) Output Characteristics Itansfer , ) T em ic 9936DY Typical Characteristics (25 °C Unless Otherwise Noted) 0.6 a 8 r i o c c e 0 l o


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PDF 9936DY P-34118--
2001 - SCA72

Abstract:
Text: Si9936DY N-channel enhancement mode field-effect transistor Rev. 01 - 16 July 2001 M3D315 , package using TrenchMOSTM1 technology. Product availability: Si9936DY in SOT96-1 (SO8). 2. Features , Si9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick , 13 Si9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor , Si9936DY Philips Semiconductors N-channel enhancement mode field-effect transistor 7. Thermal


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PDF Si9936DY M3D315 OT96-1 OT96-1, SCA72 MS-012AA
1999 - Not Available

Abstract:
Text: Si9936DY June 1999 DISTRIBUTION GROUP* Si9936DY Dual N-Channel Enhancement Mode MOSFET General Description These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain , 9vrÃhqÃhshpvtÃprÃiwrpÃÃpuhtrÃvuÃvÃvsvphv ©1999 Fairchild Semiconductor Corporation Si9936DY Rev. A Si9936DY (OHFWULFDO , : Pulse Width 300 µs, Duty Cycle 2.0% Si9936DY Rev. A SOIC-8 Tape and Reel Data SOIC(8lds


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PDF Si9936DY
1999 - Si9936DY

Abstract:
Text: Si9936DY * Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has , Fairchild Semiconductor Corporation Si9936DY Rev. A Si9936DY June 1999 6\PERO $ U Ã2Ã , : 1 on letter size paper 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0% Si9936DY Rev. A Si9936DY (OHFWULFDO &KDUDFWHULVWLFV TRADEMARKS The following are registered and unregistered


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PDF Si9936DY
2000 - Si9936DY

Abstract:
Text: Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 D1 D1 D2 , -Mar-00 www.vishay.com S FaxBack 408-970-5600 1 Si9936DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , %. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70128 S-00652-Rev. H, 27-Mar-00 Si9936DY , www.vishay.com S FaxBack 408-970-5600 3 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS


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PDF Si9936DY S-00652--Rev. 27-Mar-00
1995 - Si9936DY

Abstract:
Text: Si9936DY Siliconix Dual NChannel EnhancementMode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 D1 D1 D2 D2 SO8 , S-42910-Rev. E (01/30/95) 1 Si9936DY Siliconix Specifications (TJ = 25_C Unless , -42910-Rev. E (01/30/95) Si9936DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted , Temperature (_C) 3 Si9936DY Siliconix Typical Characteristics (25_C Unless Otherwise Noted


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PDF Si9936DY S-42910--Rev.
1999 - Si9936DY

Abstract:
Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY , for this product (FaxBack document #70539). Siliconix S­51310-Rev. G, 18-Dec-96 1 Si9936DY , , duty cycle v 2%. 2 Siliconix S­51310-Rev. G, 18-Dec-96 Si9936DY Typical Characteristics , 0 25 50 75 100 TJ ­ Junction Temperature (_C) 125 150 3 Si9936DY Typical


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PDF Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96
s1493

Abstract:
Text: T E M IC Semiconductors 9936DY Dual N-Channel Enhancement-Mode MOSFET P rod uct S u m m a r y VDS(V) 30 r DS(on)(^) 0.050 @ VGS = 10 V 0.080 @ Vgs = 4.5 V I d (A) ± 5.0 ±3.9 Recom m , 62.5 Unit °C/W Siliconix S-51310-Rev. G, 18-Dec-96 9936DY Specifications (Tj = 25 , %. 2 Siliconix S-51310-Rev. G, 18-Dec-96 Temic Semiconductors 9936DY T ransfer , Junction Temperature (°C) 125 150 Siliconix 3 S-51310-Rev. G, 18-Dec-96 9936DY


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PDF 9936DY S14936DY S16954DQ S-51310--Rev. 18-Dec-96 s1493
1999 - Not Available

Abstract:
Text: Si9936DY June 1999 Si9936DY * Dual N-Channel Enhancement Mode MOSFET General Description These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching , 9vrÃhqÃhshpvtÃprÃiwrpÃÃpuhtrÃvuÃvÃvsvphv ©1999 Fairchild Semiconductor Corporation Si9936DY Rev. A Si9936DY (OHFWULFDO , : Pulse Width 300 µs, Duty Cycle 2.0% Si9936DY Rev. A SOIC-8 Tape and Reel Data SOIC(8lds


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PDF Si9936DY
Not Available

Abstract:
Text: Si9936DY * Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has , ƒ ‚ ©1999 Fairchild Semiconductor Corporation Si9936DY Rev. A Si9936DY June 1999 6\PERO , . Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Si9936DY Rev. A Si9936DY (OHFWULFDO &KDUDFWHULVWLFV TRADEMARKS The following are registered and


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PDF Si9936DY
Si9936DY

Abstract:
Text: SPICE Device Model Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET CHARACTERISTICS · N-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate , -Nov-99 www.vishay.com 1 SPICE Device Model Si9936DY Vishay Siliconix SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE , Si9936DY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ=25°C UNLESS OTHERWISE NOTED


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PDF Si9936DY 05-Nov-99
1996 - Si4936DY

Abstract:
Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY , Si9936DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Min , , duty cycle v 2%. 114 Siliconix S-47958-Rev. F, 15-Apr-96 Si9936DY Typical Characteristics , ­25 0 25 50 75 100 TJ ­ Junction Temperature (_C) 125 150 115 Si9936DY Typical


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PDF Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96
1996 - Si4936DY

Abstract:
Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY , Si9936DY Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Symbol Test Condition Min , , duty cycle v 2%. 2 Siliconix S-47958-Rev. F, 15-Apr-96 Si9936DY Typical Characteristics , ­25 0 25 50 75 100 TJ ­ Junction Temperature (_C) 125 150 3 Si9936DY Typical


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PDF Si9936DY Si4936DY Si6954DQ S-47958--Rev. 15-Apr-96
HA20

Abstract:
Text: Tem ic siiicoim _ 9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS(V) 30 rDS(on) (ß ) 0.050 @ Vos = 10 V 0.080 @ Vos = 4.5 V I d (A) ±5.0 ±3.9 D , 9936DY Specifications (Tj = 25 °C Unless Otherwise Noted) Parameter Static G a te T h re sh o ld , 9936DY Typical Characteristics (25 °C Unless Otherwise Noted) Output Characteristics Transfer , perature (°C) S-42910- Rev. E (01/30/95) 2-55 Tem ic 9936DY typical Characteristics (25 °C


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PDF 9936DY S-42910-- HA20
1997 - Si4936DY

Abstract:
Text: Si9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 Recommended upgrade: Si4936DY , for this product (FaxBack document #70539). Siliconix S­51310-Rev. G, 18-Dec-96 1 Si9936DY , %. 2 Siliconix S­51310-Rev. G, 18-Dec-96 Si9936DY Typical Characteristics (25_C Unless , TJ ­ Junction Temperature (_C) 125 150 3 Si9936DY Typical Characteristics (25_C Unless


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PDF Si9936DY Si4936DY Si6954DQ 51310--Rev. 18-Dec-96
2005 - Not Available

Abstract:
Text: Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.050 @ VGS = 10 V 0.080 @ VGS = 4.5 V ID (A) "5.0 "3.9 D1 D1 D2 D2 SO , -Mar-00 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Limit 62.5 Unit _C/W 1 Si9936DY Vishay , -00652-Rev. H, 27-Mar-00 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output , FaxBack 408-970-5600 3 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED


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PDF Si9936DY 08-Apr-05
2009 - Si9936DY

Abstract:
Text: Si9936DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.050 @ VGS = 10 V "5.0 0.080 @ VGS = 4.5 V 30 ID (A) "3.9 D1 D1 D2 , -Mar-00 www.vishay.com S FaxBack 408-970-5600 1 Si9936DY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , %. www.vishay.com S FaxBack 408-970-5600 2 Document Number: 70128 S-00652-Rev. H, 27-Mar-00 Si9936DY , www.vishay.com S FaxBack 408-970-5600 3 Si9936DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS


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PDF Si9936DY 18-Jul-08
2002 - LM26420/LM26420Q

Abstract:
Text: C7 6.8 nF R3 20k 8 SGND 6 PH VDD 4R7 21 Vo1 2.5V/2A Si9936DY L1 R6 R7 0 , D1B BAW56 + D3 MBRS140T3 Q2B Si9936DY C23 * C22 0.1 PF * Not Installed R13 , CEP125-6R0MC Panasonic EEFUEOJ151R L2 Inductor 4.3 µH Sumida CEP125-4R3MC Q1 Si9936DY Vishay Q2 Si9936DY Vishay R1 Res 220 kΩ 0.1W 5% 0805 Vishay CRCW0805224J R2 Res


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PDF SNVA055H LM2642 LM26420/LM26420Q LM26420/LM26420Q
2006 - EEFUEOJ151R

Abstract:
Text: -6R0MC L2 Inductor 4.3H Sumida CEP125-4R3MC Q1 Si9936DY Vishay Q2 Panasonic EEFUEOJ151R Si9936DY Vishay R1 Res 220k 0.1W 5% 0805 Vishay CRCW0805224J R2 Res 20k 0.1W 5


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PDF LM2642 AN-1239 AN200474 EEFUEOJ151R Schottky Diode 40V 1A A12AB GMK325F106ZH MBRS140T31A VJ0805Y471KXA Si9936DY VJ0805Y682KXA LM2642 CRCW08050RJ
playstation 2 power supply

Abstract:
Text: SI4410DY · SI4416DY · SI9410DY · SI9936DY 20V, 9m 20V, 50m 20V, 100m 30V, 30m 30V, 30m 30V, 120m , SI4416DY · SI9410DY · SI9936DY · PHN210T · PHN203 20V, 9m 20V, 50m 20V, 100m 30V, 30m 30V, 30m , · PHN210T · PHN203 · SI4420DY · SI4410DY · SI4416DY · SI9410DY · SI9936DY 20V, 9m 20V, 50m


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PDF OT223 BSH105 BSH103 PHP225 PHC21025 playstation 2 power supply playstation 1 power supply SONY PLAYSTATION 3 sony playstation 3 power supply sony playstation 1 power supply sony playstation 2 power supply PLAYSTATION 3 power supply sony playstation 2 graphics synthesizer playstation power supply
2006 - GMK325F106ZH

Abstract:
Text: Sumida CEP125-6R0MC L2 Inductor 4.3µH Sumida CEP125-4R3MC Q1 Si9936DY Vishay Q2 Si9936DY Vishay R1 Res 220k 0.1W 5% 0805 Vishay CRCW0805224J R2 Res 20k 0.1W 5% 0805


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PDF LM2642 CSP-9-111S2) CSP-9-111S2. AN-1239 GMK325F106ZH EEFUEOJ151R A12AB Schottky Diode 40V 1A VJ0805Y682KXA vishay resistor 220k Vishay cap Si9936DY AN-1239
Not Available

Abstract:
Text: SI9936DY Transistors Matched Pair of N-Channel Enhancement MOSFETs V(BR)DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D)4.0 @Temp (øC)70’ IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case Thermal Resistance Junc-Amb.62.5 V(GS)th Max. (V) V(GS)th (V) (Min)1.0 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)250u I(DSS) Max. (A


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PDF SI9936DY
Si4948DY

Abstract:
Text: Tem ic Semiconductors S08 LITTLE FOOT® Devices Maximum Ratings Part Number V q s* 2 SV k (A) ± 10 ±6 ±5 ±3.5 = 10 ±7 ±7 ± 5.8 ±5 ±5.3 1 ±3 ±7.5 4.5 = 3.3 ±2 Configuration N-Channel LITTLE FOOT® Devices (SOIC8) SÌ9426DY9926DY9925DY9956DY4410DY4412DY9410DY ') SÌ4936DY 9936DY 9940DY 2> SÌ9955DY4450DY4946DY9945DY9959DY 60 50 30 20 0.1 0.0135 0.028 0.03 0.037 0.05 0.05 0.13 0.024 0.055 0.1 0.3 0.135 0.03 0.05 0.2 0.020 0.042 0.05 0.055 0.08 0.07 0.2 0.03 0.075


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PDF 9426DY 9926DY 9925DY 9956DY 4410DY 4412DY 9410DY 4936DY 9936DY 9940DY Si4948DY Si4946DY Si9948DY
2003 - mosfet driver mark abw

Abstract:
Text: guaranteed by design and correlation. Typical Operating Characteristics (VIN = +5V, MAX4838; Si9936DY , ) 3 Typical Operating Characteristics (continued) (VIN = +5V, MAX4838; Si9936DY external , Protection Controllers with Status FLAG Table 1. MOSFET Suggestions Si9936DY CONFIGURATION/ PACKAGE


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PDF MAX4838/MAX4840) MAX4838EXT-T SC70-6 MAX4838 MAX4841 mosfet driver mark abw MAX4838EXT-T MAX4839EXT-T MAX4840EXT-T MAX4841
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