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Si6423DQ SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si6423DQ SPICE Device Model Si6423DQ SPICE Device Model ECAD Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF

Si6423DQ SPICE Device Model Datasheets Context Search

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Si6423DQ

Abstract: No abstract text available
Text: SPICE Device Model Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET CHARACTERISTICS · , -52526Rev. B, 12-Dec-05 www.vishay.com 1 SPICE Device Model Si6423DQ Vishay Siliconix SPECIFICATIONS , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes , production testing. www.vishay.com 2 Document Number: 72327 S-52526Rev. B, 12-Dec-05 SPICE Device


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PDF Si6423DQ 18-Jul-08
2013 - Not Available

Abstract: No abstract text available
Text: SPICE Device Model Si6423DQ www.vishay.com Vishay Siliconix P-Channel 12 V (D-S) MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C , FORTH AT www.vishay.com/doc?91000 SPICE Device Model Si6423DQ www.vishay.com Vishay Siliconix , Device Model Si6423DQ www.vishay.com Vishay Siliconix COMPARISON OF MODEL WITH MEASURED DATA (TJ =


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PDF Si6423DQ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2008 - Si6423DQ

Abstract: Si6423DQ-T1-GE3
Text: Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -Mar-08 www.vishay.com 1 Si6423DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond , maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS


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PDF Si6423DQ Si6423DQ-T1-GE3 08-Apr-05
2009 - Si6423DQ

Abstract: No abstract text available
Text: Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -Mar-08 www.vishay.com 1 Si6423DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond , maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS


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PDF Si6423DQ Si6423DQ-T1-GE3 18-Jul-08
Si6423DQ

Abstract: SI6423DQ-T1-GE3
Text: Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , -Mar-08 www.vishay.com 1 Si6423DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond , maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS


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PDF Si6423DQ Si6423DQ-T1-GE3 11-Mar-11
2005 - Si6423DQ

Abstract: Si6423DQ-T1
Text: Si6423DQ New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY , , 6 and 7 must be tied common. 6 S 5 D Top View D Ordering Information: Si6423DQ , Si6423DQ New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter , -Jul-03 Si6423DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs , ) www.vishay.com 3 Si6423DQ New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED


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PDF Si6423DQ Si6423DQ-T1 08-Apr-05
Not Available

Abstract: No abstract text available
Text: Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , , 31-Mar-08 www.vishay.com 1 Si6423DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30


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PDF Si6423DQ Si6423DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2015 - Not Available

Abstract: No abstract text available
Text: Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , , 31-Mar-08 www.vishay.com 1 Si6423DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30


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PDF Si6423DQ Si6423DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2012 - Not Available

Abstract: No abstract text available
Text: Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on , Si6423DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of , may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 VGS = 5


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PDF Si6423DQ Si6423DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2011 - Not Available

Abstract: No abstract text available
Text: Si6423DQ Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on , Si6423DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of , may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 VGS = 5


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PDF Si6423DQ Si6423DQ-T1-GE3 11-Mar-11
2003 - Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
Text: SI6415ADQ SI6415DQ SI6421DQ SI6421DQ SI6421DQ SI6421DQ SI6423DQ SI6423DQ Siliconix Siliconix , Number Competitor Fairchild Part Number SI6423DQ SI6423DQ SI6426DQ SI6433DQ SI6433DQ


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PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p equivalent of BS170 2n7002 siliconix BS170 VN10KM equivalent
SUD19P06-60L

Abstract: BS250KL SUD50P08 SI3437 tsop6 marking 345 Si5947DU tsop6 marking 443 Si1471DH MOSFET SUB75P03 SI4925BDY marking
Text: drawings, SPICE models, reliability information, and part marking. Other web information includes , . For device selection, see www.vishay.com/mosfets. TrenchFET WFET are registered trademarks of , 11 16 7.7 2.5 2.5 2.5 TSSOP-8 Si6423DQ Notes: a. b. c. d. e. f. g. Qg @


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PDF SC-75 SC-75A SC-89 SUD19P06-60L BS250KL SUD50P08 SI3437 tsop6 marking 345 Si5947DU tsop6 marking 443 Si1471DH MOSFET SUB75P03 SI4925BDY marking
GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
Text: . For device selection, see www.vishay.com/mosfets. MICRO fOOT® Provides lowest On-resistance 2 , drawings, sPicE models, reliability information, and part marking. other web information includes , 5 20 1.1 Si6423DQ Single -12 8 0.0085 0.0106 0.014 b 9.5 74


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PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP si4932 SiM400 si7135 SI4477 SiB914
Text: drawings, SPICE models, reliability information, and part marking. Other web information includes


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PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP si4932 SiM400 si7135 SI4477 SiB914
si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A irfd120 sir166 SIR836 si4459a si7949
Text: No file text available


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PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A irfd120 sir166 SIR836 si4459a si7949
AD0912UB-A7

Abstract: AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
Text: TO :_ REF. No. APPROVED DATE CHECKED DATE PREPARED DATE ynnc, M AD0912UB-A73GL MODEL No , AXIAL COOLING FANS. Customer ADDA Model No. : : AD0912UB-A73GL pi ece(s) Printed on: 07/10/16 Ref: (RoHS , document. i ADDA CORPORATION Model No.: AD0912UB-A73GL Page 1/4 - 1 SPECIFICATION , Mic. Fan II Direction of air flow <- 1 mtr. > ADDA CORPORATION Model No , current leakage. 6.0 7.0 ADDA CORPORATION Model No. : AD0912UB-A73GL Page 3 / 4


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PDF AD0912UB-A73GL 49/22i AD0912UB-A7 AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
6Bs smd transistor

Abstract: e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
Text: No file text available


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PDF 24/RS DC-200 6Bs smd transistor e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
2013 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1000uF 7343H)
RG2012P-472-B-T5

Abstract: RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
Text: No file text available


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PDF RG2012PB-KIT RG2012PB RG2012P-101-B-T5 RG2012P-102-B-T5 RG2012P-103-B-T5 RG2012P-104-B-T5 RG2012P-105-B-T5 RG2012P-111-B-T5 RG2012P-112-B-T5 RG2012P-113-B-T5 RG2012P-472-B-T5 RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
2011 - ta035tcm105

Abstract: TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
Text: No file text available


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PDF TA050TCM225 TA050TCM335 TA050TCM475 TA050TCM685 TA050TCM106 TA050TCM156 TA050TCM226 ta035tcm105 TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
2008 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF
AD2512HB-BV7

Abstract: AD0524HB-G76 ad09 AD0612UB-A72GL AD0212 AD0812MB-D76 AD0412 AD0505M AD0612H BD0412MS-G70
Text: AXIAL COOLING FANS Customer Adda Model No. Samples attached Safety Approval Specifications ITEM , pcs. per Export Carton, Inch Water ADDA CORPORATION Model N o . : AD0512HB-D71 Page 1/4 , CORPORATION Model No. : AD0512HB-D71 Page 2 /4 SPECIFICATION 5.0 MECHANICAL INSPECTION 5.1 , insulation resistance and dielectric strength shall meet the specificaiton. ADDA CORPORATION Model , , AWG26 , L = 140 + /-10 MM Red = positive; Black = negative. U 30 ADDA CORPORATION Model No


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PDF AD0512HB-D71 QS-9000 0512X E/00740 AD2512HB-BV7 AD0524HB-G76 ad09 AD0612UB-A72GL AD0212 AD0812MB-D76 AD0412 AD0505M AD0612H BD0412MS-G70
2005 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF
1999 - SmartDie

Abstract: PLCC 44 intel package dimensions IMC016FLSC 28F400B3 28F320B3 28F160F3 28F160B3 28F032B3 28F016B3 IMC008FLSc
Text: running code in the same device . ­ Examples: cellular phones, cable modems, pagers, set top boxes · , running code in the same device . ­ Examples: cellular phones, cable modems, pagers, set top boxes ·


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PDF USA/0399/10K/MS SmartDie PLCC 44 intel package dimensions IMC016FLSC 28F400B3 28F320B3 28F160F3 28F160B3 28F032B3 28F016B3 IMC008FLSc
Vadem

Abstract: VG-469 IRQ11 AMPHUS
Text: No file text available


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PDF VG-469 Vadem IRQ11 AMPHUS
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