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Si5513DC SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si5513DC SPICE Device Model Si5513DC SPICE Device Model ECAD Model Vishay Complementary 20-V (D-S) MOSFET Original PDF

Si5513DC SPICE Device Model Datasheets Context Search

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Si5513DC

Abstract: No abstract text available
Text: SPICE Device Model Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET CHARACTERISTICS · , -60074Rev. B, 23-Jan-06 www.vishay.com 1 SPICE Device Model Si5513DC Vishay Siliconix SPECIFICATIONS , %. www.vishay.com 2 Document Number: 71531 S-60074Rev. B, 23-Jan-06 SPICE Device Model Si5513DC Vishay , Document Number: 71531 S-60074Rev. B, 23-Jan-06 www.vishay.com 3 SPICE Device Model Si5513DC , interpretation of the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling


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PDF Si5513DC 18-Jul-08
2010 - Si5513DC

Abstract: Si5513DC-T1-E3
Text: Si5513DC Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS , Si5513DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document


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PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 18-Jul-08
2008 - Si5513CDC

Abstract: transistor mosfet n-ch drain current Si5513CDC-T1-E3 Si5513DC Si5513DC-T1 Si5513DC-T1-E3
Text: Specification Comparison Vishay Siliconix Si5513CDC vs. Si5513DC Description: Package: Pin , Si5513DC 20 - 20 UNIT ± 12 ± 12 4 - 2.4 3.5 - 1.9 10 -8 1.4 - 1.7 3.1 3.1 - 55 to , V A W Note TA = 85 °C for Si5513DC . SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL MIN. Si5513CDC TYP. MAX. MIN. Si5513DC TYP. MAX. UNIT Static , 1 Specification Comparison Vishay Siliconix Si5513CDC vs. Si5513DC SPECIFICATIONS TJ = 25


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PDF Si5513CDC Si5513DC Si5513CDC-T1-E3 Si5513DC-T1 Si5513DC-T1-E3 04-Aug-08 transistor mosfet n-ch drain current
2011 - Not Available

Abstract: No abstract text available
Text: Si5513DC Vishay Siliconix Complementary 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel , -0547-Rev. G, 08-Mar-10 www.vishay.com 1 Si5513DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document


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PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11
Si5513DC

Abstract: Si5513DC-T1-E3
Text: Si5513DC Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS , Si5513DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document


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PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 11-Mar-11
2005 - Si5513DC

Abstract: Si5513DC-T1
Text: Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel , -42138-Rev. F, 15-Nov-04 www.vishay.com 1 Si5513DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond , maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2


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PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 08-Apr-05
Not Available

Abstract: No abstract text available
Text: Si5513DC Vishay Siliconix Complementary 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS , -Mar-10 www.vishay.com 1 Si5513DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter , “Absolute Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the , extended periods may affect device reliability. www.vishay.com 2 Document Number: 71186 S10


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PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2008 - 42138

Abstract: Si5513DC Si5513DC-T1
Text: Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel , -42138-Rev. F, 15-Nov-04 www.vishay.com 1 Si5513DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond , maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2


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PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 18-Jul-08 42138
2004 - 42138

Abstract: Si5513DC Si5513DC-T1 VISHAY diode MARKING EB
Text: Si5513DC Vishay Siliconix Complementary 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel , -42138-Rev. F, 15-Nov-04 www.vishay.com 1 Si5513DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond , maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2


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PDF Si5513DC Si5513DC-T1 Si5513DC-T1--E3 S-42138--Rev. 15-Nov-04 42138 VISHAY diode MARKING EB
2012 - Not Available

Abstract: No abstract text available
Text: Si5513DC Vishay Siliconix Complementary 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel , -0547-Rev. G, 08-Mar-10 www.vishay.com 1 Si5513DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless , those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document


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PDF Si5513DC 2002/95/EC Si5513DC-T1-E3 Si5513DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Siliconix mosfet guide

Abstract: Siliconix Selection Guide Si1471DH Si147DH list of P channel power mosfet SiA513DJ P-channel power mosfet SO-8 SC-89 Si1067X Si1071X
Text: drawings, SPICE models, reliability information, and part marking. Other web information includes , . For device selection, see www.vishay.com/mosfets. TrenchFET WFET are registered trademarks of , 0.16 4.8 3.9 4.5 1206-8 ChipFET Si5515DC Si5509DC Si5513DC Notes: a. b. c. d


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PDF SC-75 SC-75A SC-89 Siliconix mosfet guide Siliconix Selection Guide Si1471DH Si147DH list of P channel power mosfet SiA513DJ P-channel power mosfet SO-8 SC-89 Si1067X Si1071X
2007 - SBS 15 battery

Abstract: 24v charger piezoelectric circuit charger LTC4100 LTC4101 design ideas SIA811DJ charge 6v battery ac to dc 5v 2a charger high frequency battery charger
Text: .31 Alexi Sevastopoulos 3-in-1 Device Replaces Battery Charger, Overvoltage Protection and , : SIA811DJ Q2: SI5513DC 0.1µF 5 4 VBAT 0.05 PART < 5.5V > 5.5V LTC4101 LTC4100


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PDF LTC4101 LTC4101 SBS 15 battery 24v charger piezoelectric circuit charger LTC4100 design ideas SIA811DJ charge 6v battery ac to dc 5v 2a charger high frequency battery charger
2003 - 103JT-025

Abstract: uSIM sclk SeMitec Ishizuka Electronics usim diode bat2c iso7816 sim tR1200 usim card chips PXA255 ic diagram SMT3106-471M
Text: AT73C203 Power Management IC for Datacom Platforms Preliminary The AT73C203 device provides an , which the device is optimized. 8 AT73C203 2742A­PMGMT­09/03 AT73C203 The external components , Si5513DC T5 Si5513DC T6 Si1400DL T7, T9, T10 Si8401DL T8 Si5513DC T11 , to the device . This is a stress rating only and functional operation of the device at these or , implied. Exposure to absolute maximum rating conditions for extended periods may affect device


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2003 - SEMITEC 103JT-025

Abstract: 103JT-025 uSIM sclk 120v battery charger Schematic Diagram ufx5 debouncing timer usim card chips
Text: Preliminary Description The AT73C203 device provides an integrated solution to portable and handheld , and high currents. The default voltage is 0.9 V for which the device is optimized. Internal , % 200 m ± 2% 50mW Si4965DY Si5513DC Si5513DC Si1400DL Si8401DL Si5513DC Si1405DL 11 2742A , device . This is a stress rating only and functional operation of the device at these or other conditions , absolute maximum rating conditions for extended periods may affect device reliability. Recommended


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PDF 30-Sep-03 SEMITEC 103JT-025 103JT-025 uSIM sclk 120v battery charger Schematic Diagram ufx5 debouncing timer usim card chips
GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
Text: . For device selection, see www.vishay.com/mosfets. MICRO fOOT® Provides lowest On-resistance 2 , drawings, sPicE models, reliability information, and part marking. other web information includes , 5.5 8.3 PowerPAK ChipFET Si5517DU 1206-8 ChipFET Si5515DC Si5509DC Si5513DC Notes


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PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
2004 - 230V ac to 5V dc usb charger circuit

Abstract: ETSI ts 102.221 ETSI ts 102.221 V4.2.0 2742B schematic diagram 110v dc charger 56H05C 103JT-025 PXA255 AT73C203 circuit diagram for dc-dc boost converter for 24v to 230v
Text: Datacom Platforms Description The AT73C203 device provides an integrated solution to portable and , low voltages and high currents. The default voltage is 0.9V for which the device is optimized. The , 200 m ± 2% 50mW T1, T2, T3 Si4965DY T4, T5, T8 Si5513DC T6 Si1400DL T7, T9, T10 , permanent damage to the device . This is a stress rating only and functional operation of the device at , not implied. Exposure to absolute maximum rating conditions for extended periods may affect device


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PDF 2742B 230V ac to 5V dc usb charger circuit ETSI ts 102.221 ETSI ts 102.221 V4.2.0 schematic diagram 110v dc charger 56H05C 103JT-025 PXA255 AT73C203 circuit diagram for dc-dc boost converter for 24v to 230v
2004 - 230V ac to 5V dc usb charger circuit

Abstract: No abstract text available
Text: Management AT73C203 Power Management IC for Datacom Platforms Description The AT73C203 device , device is optimized. The external components needed include a current sensing resistor, a dual PMOSNMOS , T4, T5, T8 Si5513DC T6 Si1400DL T7, T9, T10 Si8401DL T11 Si1405DL Absolute , permanent damage to the device . This is a stress rating only and functional operation of the device at , not implied. Exposure to absolute maximum rating conditions for extended periods may affect device


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PDF 2742Bâ 230V ac to 5V dc usb charger circuit
2007 - LT624

Abstract: lt6241 100v 30mA ROYAL FUSE mobile battery charger circuit using 7805 LT3478-1 ic 7805 TV LTC2351-14 reference accuracy CS 213 Polymer protection LTC1407A-1 LTC3522
Text: .29­41 (complete list on page 29) New Device Cameos.42 Design Tools , solutions for portable electronic products. The first device in Linear's new PMIC family, the LTC3555 USB , soon. The device incorporates a range of power management functions including a switching PowerPathTM , satisfy them with one device . 0 ­40 ­20 0 20 40 60 80 TEMPERATURE (°C) 100 120 Figure 4 , differential) while still allowing the device to start and operate. The LT3009 also includes protection


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PDF 10ppm/ SE-164 LT624 lt6241 100v 30mA ROYAL FUSE mobile battery charger circuit using 7805 LT3478-1 ic 7805 TV LTC2351-14 reference accuracy CS 213 Polymer protection LTC1407A-1 LTC3522
AD0912UB-A7

Abstract: AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
Text: TO :_ REF. No. APPROVED DATE CHECKED DATE PREPARED DATE ynnc, M AD0912UB-A73GL MODEL No , AXIAL COOLING FANS. Customer ADDA Model No. : : AD0912UB-A73GL pi ece(s) Printed on: 07/10/16 Ref: (RoHS , document. i ADDA CORPORATION Model No.: AD0912UB-A73GL Page 1/4 - 1 SPECIFICATION , Mic. Fan II Direction of air flow <- 1 mtr. > ADDA CORPORATION Model No , current leakage. 6.0 7.0 ADDA CORPORATION Model No. : AD0912UB-A73GL Page 3 / 4


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PDF AD0912UB-A73GL 49/22i AD0912UB-A7 AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
6Bs smd transistor

Abstract: e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
Text: No file text available


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PDF 24/RS DC-200 6Bs smd transistor e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
2013 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1000uF 7343H)
RG2012P-472-B-T5

Abstract: RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
Text: No file text available


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PDF RG2012PB-KIT RG2012PB RG2012P-101-B-T5 RG2012P-102-B-T5 RG2012P-103-B-T5 RG2012P-104-B-T5 RG2012P-105-B-T5 RG2012P-111-B-T5 RG2012P-112-B-T5 RG2012P-113-B-T5 RG2012P-472-B-T5 RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
2011 - ta035tcm105

Abstract: TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
Text: No file text available


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PDF TA050TCM225 TA050TCM335 TA050TCM475 TA050TCM685 TA050TCM106 TA050TCM156 TA050TCM226 ta035tcm105 TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
2008 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF
AD2512HB-BV7

Abstract: AD0524HB-G76 ad09 AD0612UB-A72GL AD0212 AD0812MB-D76 AD0412 AD0505M AD0612H BD0412MS-G70
Text: AXIAL COOLING FANS Customer Adda Model No. Samples attached Safety Approval Specifications ITEM , pcs. per Export Carton, Inch Water ADDA CORPORATION Model N o . : AD0512HB-D71 Page 1/4 , CORPORATION Model No. : AD0512HB-D71 Page 2 /4 SPECIFICATION 5.0 MECHANICAL INSPECTION 5.1 , insulation resistance and dielectric strength shall meet the specificaiton. ADDA CORPORATION Model , , AWG26 , L = 140 + /-10 MM Red = positive; Black = negative. U 30 ADDA CORPORATION Model No


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PDF AD0512HB-D71 QS-9000 0512X E/00740 AD2512HB-BV7 AD0524HB-G76 ad09 AD0612UB-A72GL AD0212 AD0812MB-D76 AD0412 AD0505M AD0612H BD0412MS-G70
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