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Vishay Intertechnologies
SI5499DC-T1-E3 SI5499DC-T1-E3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics SI5499DC-T1-E3 3,000 - - - - - More Info
Vishay Siliconix
SI5499DCT1E3 Power Field-Effect Transistor, 2.1A I(D), 8V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET SI5499DCT1E3 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
ComS.I.T. SI5499DCT1E3 2,750 - - - - - More Info

Si5499DC datasheet (3)

Part ECAD Model Manufacturer Description Type PDF
Si5499DC Si5499DC ECAD Model Vishay P-Channel 1.5V (G-S) MOSFET Original PDF
SI5499DC-T1-E3 SI5499DC-T1-E3 ECAD Model Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 6A 1206-8 Original PDF
SI5499DC-T1-GE3 SI5499DC-T1-GE3 ECAD Model Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 6A 1206-8 Original PDF

Si5499DC Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2009 - TB-17

Abstract: Si5499DC
Text: Information: Si5499DC-T1-E3 (Lead (Pb)-free) Si5499DC-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel , Si5499DC Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on , -Dec-08 www.vishay.com 1 Si5499DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Maximum , 1 ns Document Number: 73321 S-83054-Rev. C, 29-Dec-08 Si5499DC Vishay Siliconix , . Document Number: 73321 S-83054-Rev. C, 29-Dec-08 www.vishay.com 3 Si5499DC Vishay Siliconix


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PDF Si5499DC Si5499DC-T1-E3 18-Jul-08 TB-17
2005 - TB-17

Abstract: Si5499DC
Text: Bottom View P-Channel MOSFET Ordering Information: Si5499DC-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA , Si5499DC New Product Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT , . Document Number: 73321 S-50397-Rev. A, 07-Mar-05 www.vishay.com 1 Si5499DC New Product , ns Document Number: 73321 S-50397-Rev. A, 07-Mar-05 Si5499DC New Product Vishay , . Document Number: 73321 S-50397-Rev. A, 07-Mar-05 www.vishay.com 3 Si5499DC New Product


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PDF Si5499DC 08-Apr-05 TB-17
2005 - TB-17

Abstract: Si5499DC
Text: Bottom View P-Channel MOSFET Ordering Information: Si5499DC-T1-E3 ABSOLUTE MAXIMUM RATINGS (TA , Si5499DC New Product Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT , . Document Number: 73321 S-50397-Rev. A, 07-Mar-05 www.vishay.com 1 Si5499DC New Product , ns Document Number: 73321 S-50397-Rev. A, 07-Mar-05 Si5499DC New Product Vishay , . Document Number: 73321 S-50397-Rev. A, 07-Mar-05 www.vishay.com 3 Si5499DC New Product


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PDF Si5499DC S-50397--Rev. 07-Mar-05 TB-17
2008 - Si5499DC

Abstract: S8019
Text: : Si5499DC-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise , New Product Si5499DC Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT , Si5499DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Foot , 85 55 ns 85 Document Number: 73321 S-80193-Rev. B, 04-Feb-08 New Product Si5499DC , Product Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 10


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PDF Si5499DC Si5499DC-T1-E3 08-Apr-05 S8019
2008 - Si5499DC

Abstract: pf42-08
Text: : Si5499DC-T1-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise , New Product Si5499DC Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET FEATURES PRODUCT , Si5499DC Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Foot , 85 55 ns 85 Document Number: 73321 S-80193-Rev. B, 04-Feb-08 New Product Si5499DC , Product Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 10


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PDF Si5499DC Si5499DC-T1-E3 18-Jul-08 pf42-08
7333-1

Abstract: 50413 Si5499DC 73331 A41219
Text: SPICE Device Model Si5499DC Vishay Siliconix P-Channel 8V (D-S) MOSFET CHARACTERISTICS · P-Channel Vertical DMOS · Macro Model (Subcircuit Model) · Level 3 MOS · Apply for both Linear and Switching Application · Accurate over the -55 to 125°C Temperature Range · Model the Gate Charge , -50413Rev. A, 14-Mar-05 www.vishay.com 1 SPICE Device Model Si5499DC Vishay Siliconix SPECIFICATIONS , . www.vishay.com 2 Document Number: 73331 S-50413Rev. A, 14-Mar-05 SPICE Device Model Si5499DC Vishay


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PDF Si5499DC 18-Jul-08 7333-1 50413 73331 A41219
7027a

Abstract: No abstract text available
Text: G Bottom View Ordering Information: Si5499DC-T1-E3 (Lead (Pb)-free) Si5499DC-T1-GE3 (Lead (Pb , Si5499DC Vishay Siliconix P-Channel 1.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on , limited. Document Number: 73321 S-83054-Rev. C, 29-Dec-08 www.vishay.com 1 Si5499DC Vishay Siliconix , -83054-Rev. C, 29-Dec-08 Si5499DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted , -Dec-08 www.vishay.com 3 Si5499DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 25 VGS =


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PDF Si5499DC Si5499DC-T1-E3 Si5499DC-T1-GE3 18-Jul-08 7027a
philips resistor

Abstract: mosfet 4800 sot26 sot363 transistor 4800 mosfet Si3863DV philips data pdta LMN200B01 LMN400E01 si5499 EMF33
Text: : Load Switches -Examples: Si3863DV, Si3863BDV , Si3499DV, Si5499DC , Si8419DB ON Semi: Bias


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PDF OT-26 LMN200B01 LMN400B01) LMN200B02 LMN400E01) LMN400B01 LMN400E01 OT-363 philips resistor mosfet 4800 sot26 sot363 transistor 4800 mosfet Si3863DV philips data pdta LMN400E01 si5499 EMF33
2008 - SC-89-6

Abstract: SiB914
Text: Si3495DV Si5499DC Si1499DH SiA417DJ SiA413DJ SiA411DJ SiA419DJ SiB417DK Si1051X Si8429DB Si8435DB Si8451DB


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PDF VMN-PT0103-0802 SC-89-6 SiB914
SMD resistors 1806

Abstract: SMD zener diode 202 1N4148WS
Text: RDSon Rating at 1.5 V; VDS = -8 V; ID = -7 A; rDS(on) = 48 milliohms SMD TSOP-6 Si5499DC


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PDF HPC0201A HPC0402A HPC0402B/C HPC0603A SMD resistors 1806 SMD zener diode 202 1N4148WS
SUD19P06-60L

Abstract: BS250KL SUD50P08 SI3437 tsop6 marking 345 Si5947DU tsop6 marking 443 Si1471DH MOSFET SUB75P03 SI4925BDY marking
Text: Si5485DU -20 12 0.025 0.042 Si5445BDC -8 8 0.033 0.043 0.06 Si5499DC -8


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PDF SC-75 SC-75A SC-89 SUD19P06-60L BS250KL SUD50P08 SI3437 tsop6 marking 345 Si5947DU tsop6 marking 443 Si1471DH MOSFET SUB75P03 SI4925BDY marking
GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
Text: Single -8 8 0.033 0.043 0.06 7.1 14 2.5 Si5499DC Single -8 5 0.036


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PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP si4932 SiM400 si7135 SI4477 SiB914
Text: No file text available


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PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP si4932 SiM400 si7135 SI4477 SiB914
BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 SI5433BDC-T1-E3CT-ND SI1903DL-T1-E3 SI6467BDQ-T1-E3 SI1024X-T1-E3 SI1413EDH-T1-E3CT-ND si4456 SI5855DC-T1-E3 Si9435BDY-T1-e3ct
Text: 391.50/M 391.50/M 405.00/M 391.50/M 322.00/M SI5445BDC-T1-E3 SI5499DC-T1-E3 SI5473DC-T1-E3 , . SI5445BDC-T1-E3CT-ND SI5499DC-T1-E3CT-ND SI5473DC-T1-E3CT-ND SI5853DC-T1-E3CT-ND SI5855DC-T1-E3CT-ND


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PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 SI5433BDC-T1-E3CT-ND SI1903DL-T1-E3 SI6467BDQ-T1-E3 SI1024X-T1-E3 SI1413EDH-T1-E3CT-ND si4456 SI5855DC-T1-E3 Si9435BDY-T1-e3ct
A 2733

Abstract: 2231 3500 2231 AN609 Si5499DC 27273
Text: Si5499DC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in , Si5499DC_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER , / SEMITHERM 2002 www.vishay.com 2 Document Number: 73985 Revision: 20-Jun-07 Si5499DC_RC Vishay


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PDF Si5499DC AN609 20-Jun-07 A 2733 2231 3500 2231 27273
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