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Si5473DC SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si5473DC SPICE Device Model Si5473DC SPICE Device Model ECAD Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF

Si5473DC SPICE Device Model Datasheets Context Search

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Si5473DC

Abstract: No abstract text available
Text: SPICE Device Model Si5473DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET CHARACTERISTICS · , -52526Rev. B, 12-Dec-05 www.vishay.com 1 SPICE Device Model Si5473DC Vishay Siliconix SPECIFICATIONS , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , testing. www.vishay.com 2 Document Number: 72355 S-52526Rev. B, 12-Dec-05 SPICE Device Model , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes


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PDF Si5473DC 18-Jul-08
Si5473DC

Abstract: No abstract text available
Text: Si5473DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Si5473DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , ) Transfer Characteristics Document Number: 72261 S09-0129-Rev. B, 02-Feb-09 Si5473DC Vishay


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PDF Si5473DC Si5473DC-T1-E3 Si5473DC-T1-GE3 11-Mar-11
Vishay DaTE CODE 1206-8

Abstract: Si5473DC
Text: Si5473DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Si5473DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , ) Transfer Characteristics Document Number: 72261 S09-0129-Rev. B, 02-Feb-09 Si5473DC Vishay


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PDF Si5473DC Si5473DC-T1-E3 Si5473DC-T1-GE3 18-Jul-08 Vishay DaTE CODE 1206-8
2005 - S3126

Abstract: 31265
Text: Si5473DC New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V , S-31265-Rev. A, 16-Jun-03 www.vishay.com 1 Si5473DC Vishay Siliconix New Product , VGS - Gate-to-Source Voltage (V) Document Number: 72261 S-31265-Rev. A, 16-Jun-03 2 Si5473DC , ) Document Number: 72261 S-31265-Rev. A, 16-Jun-03 www.vishay.com 3 Si5473DC Vishay Siliconix , www.vishay.com 4 Document Number: 72261 S-31265-Rev. A, 16-Jun-03 Si5473DC New Product TYPICAL


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PDF Si5473DC Si5473DC-T1 08-Apr-05 S3126 31265
2012 - Not Available

Abstract: No abstract text available
Text: Si5473DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on , Si5473DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , : 72261 S09-0129-Rev. B, 02-Feb-09 Si5473DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless


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PDF Si5473DC Si5473DC-T1-E3 Si5473DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
2012 - Not Available

Abstract: No abstract text available
Text: Si5473DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on , Si5473DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , : 72261 S09-0129-Rev. B, 02-Feb-09 Si5473DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless


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PDF Si5473DC Si5473DC-T1-E3 Si5473DC-T1-GE3 11-Mar-11
2008 - Not Available

Abstract: No abstract text available
Text: Si5473DC New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V , S-31265-Rev. A, 16-Jun-03 www.vishay.com 1 Si5473DC Vishay Siliconix New Product , VGS - Gate-to-Source Voltage (V) Document Number: 72261 S-31265-Rev. A, 16-Jun-03 2 Si5473DC , ) Document Number: 72261 S-31265-Rev. A, 16-Jun-03 www.vishay.com 3 Si5473DC Vishay Siliconix , www.vishay.com 4 Document Number: 72261 S-31265-Rev. A, 16-Jun-03 Si5473DC New Product TYPICAL


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PDF Si5473DC Si5473DC-T1 18-Jul-08
Not Available

Abstract: No abstract text available
Text: Si5473DC Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Si5473DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20


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PDF Si5473DC Si5473DC-T1-E3 Si5473DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SUD19P06-60L

Abstract: BS250KL SUD50P08 SI3437 tsop6 marking 345 Si5947DU tsop6 marking 443 Si1471DH MOSFET SUB75P03 SI4925BDY marking
Text: drawings, SPICE models, reliability information, and part marking. Other web information includes , . For device selection, see www.vishay.com/mosfets. TrenchFET WFET are registered trademarks of , 5 0.036 0.045 0.056 Si5473DC -12 8 0.027 0.0335 0.045 8.1 21 2.5


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PDF SC-75 SC-75A SC-89 SUD19P06-60L BS250KL SUD50P08 SI3437 tsop6 marking 345 Si5947DU tsop6 marking 443 Si1471DH MOSFET SUB75P03 SI4925BDY marking
GS 069

Abstract: Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
Text: . For device selection, see www.vishay.com/mosfets. MICRO fOOT® Provides lowest On-resistance 2 , drawings, sPicE models, reliability information, and part marking. other web information includes , 0.077 Si5473DC Single -12 8 0.027 0.0335 0.045 8.1 21 2.5 Si5475BDC


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PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 Si3861BDV Si5947DU Si7705DN sC89-6 SI7100DN Si3865BDV si1016x
2009 - Light Dependent Resistor LDR

Abstract: FDS642P capacitor cross reference 3303X-3 fds64 30A49 Marvell 88PG8
Text: Model ESD Rating Machine Model 1. Exceeding the absolute maximum rating may damage the device . 2 , 88PG849 Datasheet Caution This is a very high frequency device , and proper PCB layout is required , listed in Absolute Maximum Ratings may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device , process controls. 4. Devices are ESD sensitive. Handling precautions recommended. Human body model , 1.5k


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PDF 88PG849 MV-S104789-02, 88PG849 MV-S104789-02 Light Dependent Resistor LDR FDS642P capacitor cross reference 3303X-3 fds64 30A49 Marvell 88PG8
2009 - Not Available

Abstract: No abstract text available
Text: very high frequency device , and proper PCB layout is required. Refer to Section 6, Applications , may cause permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. Parameter R an g , Model 2.0 kV ESD Rating Machine Model 200 V Operating Ambient Temperature Range3 , damage the device . 2. Capable of -1.0V for less than 50ns and 7V for less than 200ns. 3. Specifications


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PDF 88PG849 MV-S104789-02, MV-S104789-02
2007 - MARVELL g31 00A3R

Abstract: g3100a3r g31 00a3r 10 Mohm ldr MVPG31 MARVELL g30 FDS642P marvell g31 00a3r Low-Dropout SOT23
Text: MVPG30x/MVPG31 operate from an input voltage range of 3.0V to 5.5V, making the device well-suited for , This is a very high frequency device and proper PCB layout is required. Refer to Section 6 , Ratings1 NOTE: Stresses above those listed in Absolute Maximum Ratings may cause permanent device , extended periods may affect device reliability. Parameter PVIN to PGND PVIN to SVIN PGND to SGND VSW to , V V °C °C °C °C kV 1. Exceeding the absolute maximum rating may damage the device . 2. Capable


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PDF MVPG30x/MVPG31 MV-S102809-00, MVPG30x/MVPG31 MV-S102809-00 MARVELL g31 00A3R g3100a3r g31 00a3r 10 Mohm ldr MVPG31 MARVELL g30 FDS642P marvell g31 00a3r Low-Dropout SOT23
2008 - MARVELL g31 00A3R

Abstract: g31 00a3r g3100a3r 00a3r MVPG31 MARVELL g30 B0A3R marvell g31 FDS642P MVPG15 prestera
Text: /MVPG31 operate from an input voltage range of 3.0V to 5.5V, making the device well-suited for portable , 22uF/6.3V This is a very high frequency device and proper PCB layout is required. Refer to Section 6 , permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. Parameter Min Ty p Max U , rating may damage the device . 2. Capable of -1.0V for less than 50 ns. 3. Specifications over the -40°C


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PDF MVPG30x/MVPG31 MV-S102808-00, orPG30x/MVPG31 MV-S102808-00 MARVELL g31 00A3R g31 00a3r g3100a3r 00a3r MVPG31 MARVELL g30 B0A3R marvell g31 FDS642P MVPG15 prestera
2007 - 10 Mohm ldr

Abstract: G16 00A2R SANYO TRACEABILITY g1600a2r
Text: MVPG15x/MVPG16 operate from an input voltage range of 3.0V to 5.5V, making the device well-suited for , Caution This is a very high frequency device and proper PCB layout is required. Refer to Section 6 , Ratings1 NOTE: Stresses above those listed in Absolute Maximum Ratings may cause permanent device , extended periods may affect device reliability. Parameter PVIN to PGND PVIN to SVIN PGND to SGND VSW to , V V °C °C °C °C kV 1. Exceeding the absolute maximum rating may damage the device . 2. Capable


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PDF MVPG15x/MVPG16 MV-S102809-00, MVPG15x/MVPG16 MV-S102809-00 10 Mohm ldr G16 00A2R SANYO TRACEABILITY g1600a2r
2008 - G16 00A2R

Abstract: g1600a2r 00A2R FDS642P A918CY-4R7M libertas SANYO TRACEABILITY fds64 10 Mohm ldr TSOP 1388
Text: /MVPG16 operate from an input voltage range of 3.0V to 5.5V, making the device well-suited for portable , 10uF/6.3V This is a very high frequency device and proper PCB layout is required. Refer to Section 6 , permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. Parameter Min Ty p Max U , rating may damage the device . 2. Capable of -1.0V for less than 50 ns. 3. Specifications over the -40°C


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PDF MVPG15x/MVPG16 MV-S102809-00, orPG15x/MVPG16 MV-S102809-00 G16 00A2R g1600a2r 00A2R FDS642P A918CY-4R7M libertas SANYO TRACEABILITY fds64 10 Mohm ldr TSOP 1388
2008 - MARVELL g31 00A3R

Abstract: No abstract text available
Text: 3.0V to 5.5V, making the device well-suited for portable applications. ̈ ̈ Tiny 4 mm x 3 mm , frequency device and proper PCB layout is required. Refer to Section 6, Applications Information, on page , permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. Parameter Min Ty p Max U , rating may damage the device . 2. Capable of -1.0V for less than 50 ns. 3. Specifications over the


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PDF MVPG30x/MVPG31 MV-S102808-00, MV-S102808-00 MARVELL g31 00A3R
2007 - MRVL G47E

Abstract: 88PG847B 88PG8X7B 88PG847 A918BY-1R3M mrvl g47b MRVL G47E Datasheet, Circuit FDS642P 88pg817b g47e
Text: . 33 88PG847B device without LDO Output , Rating3 1. Exceeding the absolute the maximum rating may damage the device 2. Specifications over the , . Human body model , 1.5 k in series with 100 pF 2.2 Recommended Operating Conditions1 P a r am e t e r , . This device is not guaranteed to function outside the specified operating range 2. Test on 4


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PDF 88PG8x7 MV-S102867-00, 88PG8x7 MRVL G47E 88PG847B 88PG8X7B 88PG847 A918BY-1R3M mrvl g47b MRVL G47E Datasheet, Circuit FDS642P 88pg817b g47e
2008 - Not Available

Abstract: No abstract text available
Text: ˆ ̈ ̈ The MVPG15x/MVPG16 operate from an input voltage range of 3.0V to 5.5V, making the device , device and proper PCB layout is required. Refer to Section 6, Applications Information, on page 49 for , permanent device failure. Functionality at or above these limits is not implied. Exposure to absolute maximum ratings for extended periods may affect device reliability. Parameter Min Ty p Max U , rating may damage the device . 2. Capable of -1.0V for less than 50 ns. 3. Specifications over the


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PDF MVPG15x/MVPG16 MV-S102809-00, MV-S102809-00
2007 - FDS642P

Abstract: g47b 88PG8
Text: . 33 88PG847B device without LDO Output , ESD Rating3 1. Exceeding the absolute the maximum rating may damage the device 2 , precautions recommended. Human body model , 1.5 kΩ in series with 100 pF 2.2 Recommended Operating , /W Package Thermal Resistance2 1. This device is not guaranteed to function outside the


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PDF 88PG8x7 MV-S102867-00, 88PG8x7 FDS642P g47b 88PG8
AD0912UB-A7

Abstract: AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
Text: TO :_ REF. No. APPROVED DATE CHECKED DATE PREPARED DATE ynnc, M AD0912UB-A73GL MODEL No , AXIAL COOLING FANS. Customer ADDA Model No. : : AD0912UB-A73GL pi ece(s) Printed on: 07/10/16 Ref: (RoHS , document. i ADDA CORPORATION Model No.: AD0912UB-A73GL Page 1/4 - 1 SPECIFICATION , Mic. Fan II Direction of air flow <- 1 mtr. > ADDA CORPORATION Model No , current leakage. 6.0 7.0 ADDA CORPORATION Model No. : AD0912UB-A73GL Page 3 / 4


OCR Scan
PDF AD0912UB-A73GL 49/22i AD0912UB-A7 AD0812HB-C71GP AD2512HB-BV7 AD4512LX-D03 AB7505HX-HB3 AD0812XB-D91GP AD0612XB AD0812HB ad6505 AD0912
6Bs smd transistor

Abstract: e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
Text: No file text available


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PDF 24/RS DC-200 6Bs smd transistor e 156176 smd code 6Bs HDC-HE-16SS crimp tools kit 163356 163063 RSV 1.6 ZE 36 6BS SMD pcb connectors 163953
2013 - Not Available

Abstract: No abstract text available
Text: No file text available


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PDF 1000uF 7343H)
RG2012P-472-B-T5

Abstract: RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
Text: No file text available


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PDF RG2012PB-KIT RG2012PB RG2012P-101-B-T5 RG2012P-102-B-T5 RG2012P-103-B-T5 RG2012P-104-B-T5 RG2012P-105-B-T5 RG2012P-111-B-T5 RG2012P-112-B-T5 RG2012P-113-B-T5 RG2012P-472-B-T5 RG2012P-681-B-T5 rg2012p RG2012P-105-B-T5 RG2012P-22 RG2012P-242-B-T5 RG2012P-243-B-T5
2011 - ta035tcm105

Abstract: TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
Text: No file text available


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PDF TA050TCM225 TA050TCM335 TA050TCM475 TA050TCM685 TA050TCM106 TA050TCM156 TA050TCM226 ta035tcm105 TA006TCM226 TA010TCM475 TA020TCM475 TA025TCM TA025TCM106
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