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Si5447DC SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si5447DC SPICE Device Model Si5447DC SPICE Device Model ECAD Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF

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Si5447DC

Abstract: No abstract text available
Text: SPICE Device Model Si5447DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET CHARACTERISTICS · , -52526Rev. B, 12-Dec-05 www.vishay.com 1 SPICE Device Model Si5447DC Vishay Siliconix SPECIFICATIONS , -52526Rev. B, 12-Dec-05 SPICE Device Model Si5447DC Vishay Siliconix COMPARISON OF MODEL WITH MEASURED , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , , Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes


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PDF Si5447DC 18-Jul-08
SI5447DC-T1-E3

Abstract: Si5447DC
Text: Si5447DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , components. Document Number: 71256 S09-0129-Rev. C, 02-Feb-09 www.vishay.com 1 Si5447DC Vishay , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , Number: 71256 S09-0129-Rev. C, 02-Feb-09 Si5447DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C


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PDF Si5447DC Si5447DC-T1-E3 Si5447DC-T1-GE3 18-Jul-08
Si5447DC

Abstract: No abstract text available
Text: Si5447DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , components. Document Number: 71256 S09-0129-Rev. C, 02-Feb-09 www.vishay.com 1 Si5447DC Vishay , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , Number: 71256 S09-0129-Rev. C, 02-Feb-09 Si5447DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C


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PDF Si5447DC Si5447DC-T1-E3 Si5447DC-T1-GE3 11-Mar-11
2007 - Si5447DC

Abstract: Si5447DC-T1
Text: Si5447DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) () ID (A) 0.076 @ VGS = -4.5 V -4.8 0.110 @ VGS = -2.5 V -4.0 0.160 @ VGS = -1.8 V , -21251-Rev. B, 05-Aug-02 www.vishay.com 2-1 Si5447DC Vishay Siliconix SPECIFICATIONS (TJ = 25 , -Aug-02 Si5447DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current , ) www.vishay.com 2-3 Si5447DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold


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PDF Si5447DC Si5447DC-T1 08-Apr-05
2008 - Not Available

Abstract: No abstract text available
Text: Si5447DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) () 0.076 @ VGS = -4.5 V 0.110 @ VGS = -2.5 V 0.160 @ VGS = -1.8 V ID (A) -4.8 -4.0 -3.3 1206-8 , components. Document Number: 71256 S-21251-Rev. B, 05-Aug-02 www.vishay.com 2-1 Si5447DC Vishay , Si5447DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current , Number: 71256 S-21251-Rev. B, 05-Aug-02 www.vishay.com 2-3 Si5447DC Vishay Siliconix TYPICAL


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PDF Si5447DC Si5447DC-T1 18-Jul-08
2013 - SI5447DC-T1-E3

Abstract: No abstract text available
Text: Si5447DC Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on , Si5447DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Gate , device . These are stress ratings only, and functional operation of the device at these or any other , to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL , www.vishay.com 2 Document Number: 71256 S09-0129-Rev. C, 02-Feb-09 Si5447DC Vishay Siliconix TYPICAL


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PDF Si5447DC Si5447DC-T1-E3 Si5447DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2003 - TPS6420x

Abstract: 3 phase inverter 120 conduction mode theory wurth 744 Si5447DC TPS642000 TPS64200DBVR TPS64201DBVR TPS64202 TPS64203 ZHCS2000
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 k , have limited built-in ESD protection. The leads should be shorted together or the device placed in , damage to the device . These are stress ratings only, and functional operation of the device at these or , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Maximum gate drive output current, SW VIH VIL EN high level input voltage Device is off EN


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x 3 phase inverter 120 conduction mode theory wurth 744 Si5447DC TPS642000 TPS64200DBVR TPS64201DBVR TPS64202 TPS64203 ZHCS2000
2003 - PJAI

Abstract: WURTH 744
Text: 1 2 3 EN GND SW VIN 6 5 4 R1 620 k 47 µF PosCap 6TPA47M Si5447DC 10 µH 3.3 V / 2 A Rs = 33 m 100 , protection. The leads should be shorted together or the device placed in conductive foam during storage or , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Device is off Device is operating 1.3 115 EN = GND or VIN 0.01 1.7 ON TIME and OFF TIME


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x PJAI WURTH 744
2003 - li-ion battery protection sot23-6

Abstract: PJAI pjci TPS64203 TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 SOT23-6 PMOS
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 k , have limited built-in ESD protection. The leads should be shorted together or the device placed in , damage to the device . These are stress ratings only, and functional operation of the device at these or , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Maximum gate drive output current, SW VIH VIL EN high level input voltage Device is off EN


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x li-ion battery protection sot23-6 PJAI pjci TPS64203 TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 SOT23-6 PMOS
2003 - Not Available

Abstract: No abstract text available
Text: 1 2 3 EN GND SW VIN 6 5 4 R1 620 k 47 µF PosCap 6TPA47M Si5447DC 10 µH 3.3 V / 2 A Rs = 33 m 100 , protection. The leads should be shorted together or the device placed in conductive foam during storage or , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Device is off Device is operating 1.3 115 EN = GND or VIN 0.01 1.7 ON TIME and OFF TIME


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x
2003 - SOT23 PMOS

Abstract: ZHCS2000 TPS64203 TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 Si5447DC 6TPA47M
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 k , have limited built-in ESD protection. The leads should be shorted together or the device placed in , damage to the device . These are stress ratings only, and functional operation of the device at these or , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Maximum gate drive output current, SW VIH VIL EN high level input voltage Device is off EN


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x SOT23 PMOS ZHCS2000 TPS64203 TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 Si5447DC 6TPA47M
2003 - TPS64203DBV

Abstract: SOT-23 mosfet marking LPW 705C rectifier
Text: 1 2 3 EN GND SW VIN 6 5 4 R1 620 k 47 µF PosCap 6TPA47M Si5447DC 10 µH 3.3 V / 2 A Rs = 33 m 100 , protection. The leads should be shorted together or the device placed in conductive foam during storage or , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Device is off Device is operating 1.3 115 EN = GND or VIN 0.01 1.7 ON TIME and OFF TIME


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x TPS64203DBV SOT-23 mosfet marking LPW 705C rectifier
2003 - SOT23-6 PMOS

Abstract: li-ion battery protection sot23-6 3 phase inverter 180 conduction mode theory Snubber circuits theory, design and application RC snubber diode SI2301DS* equivalent marking r2 SOT23-6 MOSFET Li-ion battery SOT23-6 744511 SOT23-6 MARKING 56
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 k , have limited built-in ESD protection. The leads should be shorted together or the device placed in , damage to the device . These are stress ratings only, and functional operation of the device at these or , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Maximum gate drive output current, SW VIH VIL EN high level input voltage Device is off EN


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x SOT23-6 PMOS li-ion battery protection sot23-6 3 phase inverter 180 conduction mode theory Snubber circuits theory, design and application RC snubber diode SI2301DS* equivalent marking r2 SOT23-6 MOSFET Li-ion battery SOT23-6 744511 SOT23-6 MARKING 56
2003 - Si2323

Abstract: marking 326 SOT23-6 TPS6104
Text: 1 2 3 EN GND SW VIN 6 5 4 R1 620 k 47 µF PosCap 6TPA47M Si5447DC 10 µH 3.3 V / 2 A Rs = 33 m 100 , protection. The leads should be shorted together or the device placed in conductive foam during storage or , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Device is off Device is operating 1.3 115 EN = GND or VIN 0.01 1.7 ON TIME and OFF TIME


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x Si2323 marking 326 SOT23-6 TPS6104
2003 - ZHCS2000

Abstract: TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 Si5447DC SI2301ADS SI2301DS li-ion battery protection sot23-6 744511
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 k , have limited built-in ESD protection. The leads should be shorted together or the device placed in , damage to the device . These are stress ratings only, and functional operation of the device at these or , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Maximum gate drive output current, SW VIH VIL EN high level input voltage Device is off EN


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x ZHCS2000 TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 Si5447DC SI2301ADS SI2301DS li-ion battery protection sot23-6 744511
2003 - pjdi

Abstract: epcos 800 324 o
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 kâ , These devices have limited built-in ESD protection. The leads should be shorted together or the device , “absolute maximum ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under , extended periods may affect device reliability. PACKAGE DISSIPATION RATINGS PACKAGE TA â


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x pjdi epcos 800 324 o
2003 - Li-ion battery SOT23-6 5v

Abstract: No abstract text available
Text: 1 2 3 EN GND SW VIN 6 5 4 R1 620 k 47 µF PosCap 6TPA47M Si5447DC 10 µH 3.3 V / 2 A Rs = 33 m 100 , protection. The leads should be shorted together or the device placed in conductive foam during storage or , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Device is off Device is operating 1.3 115 EN = GND or VIN 0.01 1.7 ON TIME and OFF TIME


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x Li-ion battery SOT23-6 5v
2003 - sumida CDRH

Abstract: ZHCS2000 TPS64203 TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 Si5447DC FDG326P
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 k , have limited built-in ESD protection. The leads should be shorted together or the device placed in , damage to the device . These are stress ratings only, and functional operation of the device at these or , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Maximum gate drive output current, SW VIH VIL EN high level input voltage Device is off EN


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x sumida CDRH ZHCS2000 TPS64203 TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 Si5447DC FDG326P
2003 - Not Available

Abstract: No abstract text available
Text: 1 2 3 EN GND SW VIN 6 5 4 R1 620 k 47 µF PosCap 6TPA47M Si5447DC 10 µH 3.3 V / 2 A Rs = 33 m 100 , protection. The leads should be shorted together or the device placed in conductive foam during storage or , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Device is off Device is operating 1.3 115 EN = GND or VIN 0.01 1.7 ON TIME and OFF TIME


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x
2003 - SOT-23 mosfet marking LPW

Abstract: 6TPA47M rohs
Text: 1 2 3 EN GND SW VIN 6 5 4 R1 620 k 47 µF PosCap 6TPA47M Si5447DC 10 µH 3.3 V / 2 A Rs = 33 m 100 , protection. The leads should be shorted together or the device placed in conductive foam during storage or , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Device is off Device is operating 1.3 115 EN = GND or VIN 0.01 1.7 ON TIME and OFF TIME


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x SOT-23 mosfet marking LPW 6TPA47M rohs
2003 - Not Available

Abstract: No abstract text available
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 kâ , These devices have limited built-in ESD protection. The leads should be shorted together or the device , beyond those listed under “absolute maximum ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions , absolute-maximum-rated conditions for extended periods may affect device reliability. PACKAGE DISSIPATION RATINGS


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x
2003 - 6TPA47M

Abstract: TPS64203DBV TPS64203 TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 Si5447DC ZHCS2000
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 k , have limited built-in ESD protection. The leads should be shorted together or the device placed in , damage to the device . These are stress ratings only, and functional operation of the device at these or , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Maximum gate drive output current, SW VIH VIL EN high level input voltage Device is off EN


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x 6TPA47M TPS64203DBV TPS64203 TPS64202 TPS64201DBVR TPS64201 TPS64200DBVR TPS64200 Si5447DC ZHCS2000
2003 - wurth 744

Abstract: "CFF"
Text: 1 2 3 EN GND SW VIN 6 5 4 R1 620 k 47 µF PosCap 6TPA47M Si5447DC 10 µH 3.3 V / 2 A Rs = 33 m 100 , protection. The leads should be shorted together or the device placed in conductive foam during storage or , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Device is off Device is operating 1.3 115 EN = GND or VIN 0.01 1.7 ON TIME and OFF TIME


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x wurth 744 "CFF"
2003 - 74451

Abstract: SOT-23 mosfet marking LPW
Text: 1 2 3 EN GND SW VIN 6 5 4 R1 620 k 47 µF PosCap 6TPA47M Si5447DC 10 µH 3.3 V / 2 A Rs = 33 m 100 , protection. The leads should be shorted together or the device placed in conductive foam during storage or , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Device is off Device is operating 1.3 115 EN = GND or VIN 0.01 1.7 ON TIME and OFF TIME


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x 74451 SOT-23 mosfet marking LPW
1997 - wurth 744

Abstract: WuRTH 744 065 100 Si5447DC TPS64200 TPS64200DBVR 6TPA47M TPS64201DBVR TPS64202 TPS64203 ZHCS2000
Text: EN GND 6 VIN 5 3 FB ISENSE 4 ZHCS2000 Si5447DC 10 µH 80 R1 620 k , have limited built-in ESD protection. The leads should be shorted together or the device placed in , damage to the device . These are stress ratings only, and functional operation of the device at these or , . Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability , Maximum gate drive output current, SW VIH VIL EN high level input voltage Device is off EN


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PDF TPS64200, TPS64201 TPS64202, TPS64203 SLVS485 TPS6420x wurth 744 WuRTH 744 065 100 Si5447DC TPS64200 TPS64200DBVR 6TPA47M TPS64201DBVR TPS64202 TPS64203 ZHCS2000
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