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Si5402DC SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si5402DC SPICE Device Model Si5402DC SPICE Device Model ECAD Model Vishay N-Channel 2.5-V (G-S) MOSFET Original PDF

Si5402DC SPICE Device Model Datasheets Context Search

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Si5402DC

Abstract: No abstract text available
Text: Click Here & Upgrade Expanded Features Unlimited Pages PDF Complete SPICE Device Model Si5402DC , Pages Documents SPICE Device Model Si5402DC Vishay Siliconix COMPARISON OF MODEL WITH MEASURED , Device Model Si5402DC Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET CHARACTERISTICS · N-Channel , Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical , . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline and does not constitute


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PDF Si5402DC 18-Jul-08
2001 - 25e5

Abstract: NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3
Text: AND8050/D SPICE Device Model NTHS55445T1 N­Channel 2.5 V (G­S) MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS DESCRIPTION · · · · · · The attached SPICE Model describes typical electrical characteristics of the p­channel vertical DMOS. The sub­circuit model was extracted , : AND8050/D AND8050/D MODEL EVALUATION N­CHANNEL DEVICE (TJ = 25°C unless otherwise noted , drives. Saturated output impedance model accuracy has been maximized for gate biases near threshold. A


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PDF AND8050/D NTHS55445T1 r14525 25e5 NMOS MODEL PARAMETERS SPICE 4e16 330E-12 Kappa Networks 330E Si5402DC 52E-3
2001 - 4e16

Abstract: 25e5 4E-16
Text: AND8050/D SPICE Device Model NTHS5402T1 N­Channel 2.5 V (G­S) MOSFET http://onsemi.com , device . D 4 M2 R1 M1 G CGS 1 2 3 DBD S Figure 1. Model Sub­circuit This document is intended , /D AND8050/D MODEL EVALUATION N­CHANNEL DEVICE (TJ = 25°C unless otherwise noted , Range Models Gate Charge, Transient, and Diode Reverse Recovery Characteristics The attached SPICE Model describes typical electrical characteristics of the p­channel vertical DMOS. The sub­circuit model


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PDF AND8050/D NTHS5402T1 r14525 AND8050/D 4e16 25e5 4E-16
Si5402DC

Abstract: No abstract text available
Text: Si5402DC Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , components. Document Number: 71062 S09-1503-Rev. D, 10-Aug-09 www.vishay.com 1 Si5402DC Vishay , to the device . These are stress ratings only, and functional operation of the device at these or any , . Exposure to absolute maximum rating conditions for extended periods may affect device reliability , -1503-Rev. D, 10-Aug-09 Si5402DC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted


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PDF Si5402DC 2002/95/EC Si5402DC-T1-E3 Si5402DC-T1-GE3 18-Jul-08
2008 - Si5402DC

Abstract: Si5402DC-T1
Text: Si5402DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.035 @ VGS = 10 V "6.7 0.055 @ VGS = 4.5 V 30 ID (A) "5.3 D 1206-8 ChipFETt 1 D D , components. Document Number: 71062 S-21251-Rev. C, 05-Aug-02 www.vishay.com 2-1 Si5402DC Vishay , S-21251-Rev. C, 05-Aug-02 Si5402DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS , (V) www.vishay.com 2-3 Si5402DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS


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PDF Si5402DC Si5402DC-T1 18-Jul-08
Si5402DC

Abstract: Si5402DC-T1 Si5402BDC
Text: Specification Comparison Vishay Siliconix Si5402BDC vs. Si5402DC Description: N-Channel, 30 V (D-S) MOSFET Package: 1206-8 ChipFET® Pin Out: Identical Part Number Replacements: Si5402BDC-T1-E3 Replaces Si5402DC-T1-E3 Si5402BDC-T1 Replaces Si5402DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Si5402BDC Si5402DC Drain-Source Voltage VDS 30 , Min Typ Si5402DC Max Min 3.0 Typ 1.0 Max Unit Static VGS(th


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PDF Si5402BDC Si5402DC Si5402BDC-T1-E3 Si5402DC-T1-E3 Si5402BDC-T1 Si5402DC-T1 09-Nov-06
Not Available

Abstract: No abstract text available
Text: Si5402DC Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V , Si5402DC Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test , Maximum Ratings” may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections , periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20


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PDF Si5402DC 2002/95/EC Si5402DC-T1-E3 Si5402DC-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
2012 - MARKING CODE AA

Abstract: Vishay DaTE CODE 1206-8 AN811 AA MARKING CODE SO8
Text: Si5402DC Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on , . Document Number: 71062 S09-1503-Rev. D, 10-Aug-09 www.vishay.com 1 Si5402DC Vishay Siliconix , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C


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PDF Si5402DC 2002/95/EC Si5402DC-T1-E3 Si5402DC-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MARKING CODE AA Vishay DaTE CODE 1206-8 AN811 AA MARKING CODE SO8
2005 - SI5402DC

Abstract: No abstract text available
Text: Si5402DC Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.035 @ VGS = 10 V 0.055 @ VGS = 4.5 V ID (A) "6.7 "5.3 1206-8 ChipFETt 1 D D D D S D D , -21251-Rev. C, 05-Aug-02 www.vishay.com 2-1 Si5402DC Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS , -21251-Rev. C, 05-Aug-02 Si5402DC Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED , ) Document Number: 71062 S-21251-Rev. C, 05-Aug-02 www.vishay.com 2-3 Si5402DC Vishay Siliconix


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PDF Si5402DC Si5402DC-T1 08-Apr-05
2012 - SI5402DC

Abstract: No abstract text available
Text: Si5402DC Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on , . Document Number: 71062 S09-1503-Rev. D, 10-Aug-09 www.vishay.com 1 Si5402DC Vishay Siliconix , beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C


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PDF Si5402DC 2002/95/EC Si5402DC-T1-E3 Si5402DC-T1-GE3 11-Mar-11
2003 - NTC R29

Abstract: AMP-787441-1 AMP-74 NCP21XV103J03RA 35CV10AX 2N7002-SOT23 taiyo yuden date code 8.4v battery charger 919AS-220M MBRM140T3
Text: 8 GND 32.4K 1% TP6 * 22uH 10 6 R10 NTC L1 Q6 Si5402DC 9 TP4 , , SOT23 N-Chan. MOSFET, Si5402DC XSTR., PNP, MMBT3906, SOT23 RES., Chip, 5.1K, 0.1W, 5% 0603 RES , , TP0610T ZETEX, 2N7002 VISHAY, Si5402DC Diodes Inc., MMBT3906-7 AAC, CR16-512JM IRC, LR1206


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PDF LTC4006 b3C105KAT EMK107BJ104MA TAJB106M016 0603ZC472MAT MBRM140T3 MMSZ5248BS-7 LN1451C- LN1351C- 2802S-03-G1 NTC R29 AMP-787441-1 AMP-74 NCP21XV103J03RA 35CV10AX 2N7002-SOT23 taiyo yuden date code 8.4v battery charger 919AS-220M MBRM140T3
PV14 schematic diagram

Abstract: SIS 650 sis 962l NBC3801 quanta SiS302ELV varistor SEN 470K D7 01ub quanta computer C930
Text: 3 2 1 2 Q6 SI5402DC 1206-8 <2ND PART FIELD> C392 0.01U 2 6 6 6 VADE VBCAD VBHCLK VBDE


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PDF SOCKET-478) 15-Pin 2100MB/s 133MHz) 12bit 12bit SIS302ELV 266MHz 133MB/s 33MHZ) PV14 schematic diagram SIS 650 sis 962l NBC3801 quanta varistor SEN 470K D7 01ub quanta computer C930
sis 962l

Abstract: SIS 650 quanta LM393 PV14 schematic diagram NBR12 C945 p 331 302ELV NBC107 NBR26
Text: VADE VBCAD VBHCLK VBDE 6 4 7 6 3 2 1 2 Q6 SI5402DC 1206-8 < 2ND PART FIELD> LCD-VDD3 L14 2 3 Q19 ENAVDD


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PDF SOCKET-478) 2100MB/s 133MHz) 15-Pin SIS302ELV/LV 66/100MHz IEEE1394 133MB/s 33MHZ) sis 962l SIS 650 quanta LM393 PV14 schematic diagram NBR12 C945 p 331 302ELV NBC107 NBR26
C5802

Abstract: 10ACT sis 962l quanta PC97 MH 7404 Socket AM2 quanta bd3 ac6 vc1 106 39p vc1 mlb
Text: 1 Model MODEL REV 3A 3B ECN : E200310-0864 ECN : E200310-2067 ECN : E200310-3407 VC1 , DACGND DACVDD IOC I OY IOCOMP V2COMP DACGND VBDE 6 VBCTL1 6,12 VBCLK 6 Q7 4 Q6 SI5402DC 1206-8


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PDF S2K-200/266 2100MB/s 133MHz) 15-Pin 12bit SIS3012ELV/LV 66/100MHz 266MHz IEEE1394 C5802 10ACT sis 962l quanta PC97 MH 7404 Socket AM2 quanta bd3 ac6 vc1 106 39p vc1 mlb
C547 b

Abstract: r9824 quanta Quanta MK1 fc526 VID0 FID0 AMD bc505 AMD Athlon II X4 AMD ATHLON 64 X2 AM2 pin out 80081A
Text: 5 4 3 2 1 Model MODEL MK1 M/B BOARD REV 1A 2A First Release MK1 M/B BOARD FM TO CHANGE LIST Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 1A 3A 3A 3E 2B 3A 2A 2B 1A 2A 3D 1A 2A 1A 3C 3C 3A 3A 3A 3A 1A 3E 1A 1A 1A 3A 1A 3C 3F B C D D PAGE 2 ADD U32,R389,R390,R391,R392,R393,C558 FOR Recommand PAGE 7 BOM ADD R116 DEL R113 , DOC. NO:204 DATE :09/16/2002 SHEET 1 1 5 4 3 2 1 Model MODEL MK1 M/B BOARD


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PDF E200206-334 1U/25V 100K/F 102K/F 2N7002E LP2951 AL002951012 CH51001M993 10K/F C547 b r9824 quanta Quanta MK1 fc526 VID0 FID0 AMD bc505 AMD Athlon II X4 AMD ATHLON 64 X2 AM2 pin out 80081A
sis 962l

Abstract: sis962l MH 7404 SIS 740 LM393 quanta HP Quanta R52 sis962 Socket AM2 AMD ATHLON 64 X2 AM2 pin out
Text: VBCTL1 6,12 VBCLK 6 Q7 4 Q6 SI5402DC 1206-8 BAM54020Z02 LCD-VDD3 L14 3 2 3 Q19 VBRCLK 13


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PDF S2K-200/266 2100MB/s 133MHz) 15-Pin 12bit SIS302ELV/LV 66/100MHz 266MHz IEEE1394 sis 962l sis962l MH 7404 SIS 740 LM393 quanta HP Quanta R52 sis962 Socket AM2 AMD ATHLON 64 X2 AM2 pin out
sis 962l

Abstract: lm393 charger SIS 740 quanta Socket AM2 sis740 BLM21 sd 7401 rc BD3 c502 82C30
Text: IOCOMP V2COMP DACGND VBDE 6 VBCTL1 6,12 VBCLK 6 Q7 4 Q6 SI5402DC 1206-8 BAM54020Z02 LCD-VDD3 L14


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PDF S2K-200/266 2100MB/s 133MHz) 15-Pin 12bit SIS3012ELV/LV 66/100MHz 266MHz IEEE1394 sis 962l lm393 charger SIS 740 quanta Socket AM2 sis740 BLM21 sd 7401 rc BD3 c502 82C30
2002 - fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
Text: Si4947DY Si5402DC SI5435DC Si9405DY Si9410DY Si9430DY Si9804DY Si9933ADY Si9936DY Si9945DY


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PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 STP55NF06 AND ITS EQUIVALENT FSD6680 SFP70N03 HGTG*N60A4D irf630 irf640
AHCT1G125DCH

Abstract: g10 t60 isl6247 CX20468-21 quanta lm385n RTL8101L PC87C570-TQFP CX20468 foxconn
Text: 5 4 3 2 1 Model MODEL NT11 M/B BOARD REV 1A 2A FIRST RELEASE MK1 M/B BOARD FM TO CHANGE LIST Page D PAGE 2 - CHANGE R577 PULL-UP VOLTAGE TO COREVCC TO AVOID SYSTEM SHUTDOWN WHEN FIRST POWER-ON CHANGE R546 PULL-UP VOLTAGE CPUVIDVCC AS INTEL CRB RECOMMANDATION , /2003 SHEET 2 1 8 7 6 5 4 3 2 1 Model MODEL NT11 M/B BOARD REV 4A , POWER FROM 0.5A TO 1A TO SUPPORT USB HDD DEVICE . SHORT U33/U34 PIN 5 AND 8 TO INCREASE POWER. PAGE 28


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PDF L46/L47 10U/25V PC173 SI4362DY IRF7811A EC31QS04 1000P AHCT1G125DCH g10 t60 isl6247 CX20468-21 quanta lm385n RTL8101L PC87C570-TQFP CX20468 foxconn
lm385n

Abstract: quanta computer F312V quanta MDB41 CB-145 RTL8101L foxconn CB263 RN138
Text: No file text available


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PDF CK-410 ISL6247 SC1486 MAX1772 533/667/800MHz 64/128M) M24-P 333MHz SI4362DY IRF7811A lm385n quanta computer F312V quanta MDB41 CB-145 RTL8101L foxconn CB263 RN138
963L-2

Abstract: 760GX LM393 quanta SiS302ELV nec pc123 Lx010 RTM360 MCL F 108 T4-1 quanta 495 pin
Text: No file text available


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PDF uPGA754 2700MB/s 166MHz) 15-Pin SISM760 12bit SIS302ELV/LV 66/100MHz 963L-2 760GX LM393 quanta SiS302ELV nec pc123 Lx010 RTM360 MCL F 108 T4-1 quanta 495 pin
963L-2

Abstract: LM393 RTM360 quanta BLM21A05 C-581 VMD41 RTM360-755R MCL F 108 T4-1 a9ca
Text: No file text available


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PDF uPGA754 2700MB/s 166MHz) 15-Pin SISM760 12bit SIS302ELV/LV 66/100MHz 963L-2 LM393 RTM360 quanta BLM21A05 C-581 VMD41 RTM360-755R MCL F 108 T4-1 a9ca
M7602

Abstract: VDDIO10 963L-2 rtm360 RTM360-755R M760LV nec pc123 quanta CADIN12 quanta computer
Text: No file text available


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PDF uPGA754 2700MB/s 166MHz) 15-Pin SISM760 12bit SIS302ELV/LV 66/100MHz M7602 VDDIO10 963L-2 rtm360 RTM360-755R M760LV nec pc123 quanta CADIN12 quanta computer
pin diagram OF TRANSISTOR BC158

Abstract: ITE8705 transistor Bc117 C344 R0603 bt1610 foxconn TRANSISTOR bc104 BC158 transistor BC137
Text: _S5 =3VAL +3V 5V_S5 +5V Device Rails CPU 5VPCU 3V_591 3V_S5 GMCH ICH4-MPC87591 DDR AUDIO HDD


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PDF 25VDDR MAX1907 TPC01 MAX1632 400MHZ ICS950810 CH7011 33MHZ, P/-20% C0603 pin diagram OF TRANSISTOR BC158 ITE8705 transistor Bc117 C344 R0603 bt1610 foxconn TRANSISTOR bc104 BC158 transistor BC137
Quanta AT8

Abstract: MCP51 quanta u36 max8774 MAX8774 CX20549 C51M AMD socket s1 max8774 pwm Samsung R418 kb3920
Text: Jack to Speaker PG 25 DEVICE RICOH832 D MODEM RJ 11 PG 20 INTA#,INTB# FAN PG 31


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PDF Turion64 5W/35W 667mhz 667mhz RJ-45 C51M/D PCIPR231 8774LX2 SI7636DP-T1-E3 8774DL2 Quanta AT8 MCP51 quanta u36 max8774 MAX8774 CX20549 C51M AMD socket s1 max8774 pwm Samsung R418 kb3920
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