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Si4946EY SPICE Device Model datasheet (1)

Part ECAD Model Manufacturer Description Type PDF
Si4946EY SPICE Device Model Si4946EY SPICE Device Model ECAD Model Vishay Dual N-Channel 50-V (D-S) Dual MOSFET Original PDF

Si4946EY SPICE Device Model Datasheets Context Search

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Si4946EY

Abstract: No abstract text available
Text: SPICE Device Model Si4946EY Vishay Siliconix Dual N-Channel 50-V (D-S) Dual MOSFET , -52575Rev. B, 02-Jan-06 www.vishay.com 1 SPICE Device Model Si4946EY Vishay Siliconix SPECIFICATIONS , -52575Rev. B, 02-Jan-06 SPICE Device Model Si4946EY Vishay Siliconix COMPARISON OF MODEL WITH MEASURED , the device . SUBCIRCUIT MODEL SCHEMATIC This document is intended as a SPICE modeling guideline , Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model


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PDF Si4946EY 18-Jul-08
2006 - 74067

Abstract: SI4946BEY-T1-E3 SI4946EY-T1-E3 Si4946BEY Dual N-Channel 60-V D-S SI4946EY-T1 Si4946EY
Text: Specification Comparison Vishay Siliconix Si4946BEY vs. Si4946EY Description: Dual N-Channel, 60 V (D-S) MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4946BEY-T1-E3 , otherwise noted Parameter Symbol Si4946BEY Si4946EY Drain-Source Voltage VDS 60 60 , Symbol Si4946BEY Min Typ 1.0 2.4 Si4946EY Max Min 3.0 Typ 1.0 Max Unit , and RL = 30 , ID = 1 A, Rg = 6 on the Si4946EY . Specification comparisons are supplied as a courtesy


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PDF Si4946BEY Si4946EY Si4946BEY-T1-E3 Si4946EY-T1-E3 Si4946BEY-T1 Si4946EY-T1 74067 Dual N-Channel 60-V D-S
2009 - Si4946EY

Abstract: Si4946EY-T1
Text: Si4946EY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT , Top View S Ordering Information: Si4946EY Si4946EY-T1 (with Tape and Reel) Si4946EY-E3 (Lead , -Mar-05 www.vishay.com 1 Si4946EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter , %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions


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PDF Si4946EY Si4946EY-T1 Si4946EY--E3 Si4946EY-T1--E3 18-Jul-08
2007 - 50524

Abstract: si4946 SI4946EY-T1 Si4946EY SI4946EY-E3
Text: Si4946EY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET FEATURES PRODUCT , Top View S Ordering Information: Si4946EY Si4946EY-T1 (with Tape and Reel) Si4946EY-E3 (Lead , -Mar-05 www.vishay.com 1 Si4946EY Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter , %. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions


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PDF Si4946EY Si4946EY-T1 Si4946EY--E3 Si4946EY-T1--E3 08-Apr-05 50524 si4946 SI4946EY-E3
2005 - 70157

Abstract: 5-0524
Text: Si4946EY Vishay Siliconix Dual N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V , -8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4946EY Si4946EY-T1 (with Tape and Reel , -Mar-05 www.vishay.com Symbol RthJA Limit 62.5 Unit _C/W 1 Si4946EY Vishay Siliconix SPECIFICATIONS , cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the


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PDF Si4946EY Si4946EY-T1 Si4946EY--E3 Si4946EY-T1--E3 S-50524--Rev. 28-Mar-05 70157 5-0524
Not Available

Abstract: No abstract text available
Text: Tem ic S e m i c o n d u c t o r s 4946EY Dual N-Channel 60-V, 175° C Rated MOSFET Product Summary VDS(V) 60 fDSion) (ß ) 0.055 @ VGs = 10 V 0.075 @ VGS = 4.5 V I d (A) ±4.5 ±3.9 \1 5 , -49520-Rev. B, 18-Dec-96 3-65 New Product 4946EY Specifications (Tj = 25 °C Unless Otherwise Noted , -Dec-96 Tem ic Se mi c on du c t or s 4946EY Typical Characteristics (25 °C Unless Otherwise Noted , ) Siliconix S-49520-Rev. B, 18-Dec-96 3-67 New Product SOIC-8 4946EY "typical Characteristics


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PDF 4946EY S-49520--Rev. 18-Dec-96
si9945

Abstract: 15nc c3 Si9945DY dual high side MOSFET driver with charge pump Si9976DY Si9976 Si4946EY IN4148 AN709 replace IN4148
Text: (SO-8, 3.3 A) or Si4946EY (SO-8, 4.5 A) dual n-channel LITTLE FOOT MOSFETs provide power handling , voltage range of 20 to 40 V. The device is specified over the industrial temperature range (­40_ to , VGS = 10 V (nC) Minimum Recommended CBOOT (mF) Si4946EY 0.055 30 0.039 Si9945 , the Si9945DY or the Si4946EY yields current ratings of 3.7 A or 4.5 A, respectively. Any circuit , , can affect the operation of the circuit. Proper PC board layout techniques and device decoupling


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PDF AN709 Si9976DY Si9945 Si4946EY si9945 15nc c3 Si9945DY dual high side MOSFET driver with charge pump Si9976 IN4148 AN709 replace IN4148
2007 - Jamicon capacitor

Abstract: SKR220M2AFBB jamicon electrolytic capacitors 1206zC106K ST-4EG-103 jamicon 3 phase invertor schematic MC33297 lvr03r TDK TSL0709
Text: particular application. Final device in an application will be heavily dependent on proper printed circuit , 51R 4 PH_A 2 1 Si4946EY Q104-2 Si4946EY Q100-1 PB_LS_G PB_HS_G R104 , 7 8 5 Si4946EY Q105-2 Si4946EY Q101-1 GND_LSFET 6 8 5 Figure A-5. 3 , 17 3 3-Phase N-MOS Bridge Si4946EY Q103-2 Si4946EY Q102-1 KIT33927EKEVBE


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PDF KIT33927EKEVBE KT33927UG Jamicon capacitor SKR220M2AFBB jamicon electrolytic capacitors 1206zC106K ST-4EG-103 jamicon 3 phase invertor schematic MC33297 lvr03r TDK TSL0709
mosfet based h bridge

Abstract: SI4946 Si4946EY si9979 AN603 h bridge Controller PWM Si9978 Si9978DW C423A
Text: the Si4946EY , 30 nC (Qg) is required for turn-on at a Vgs of 10 V. Using the equation C = Qg/VGS, 30 , capacitor is determined by the gate charge required for the MOSFET selected. The Si4946EY requires 30 nC , ) MOSFET is needed to allow operation at elevated temperature. The Si4946EY exceeds this requirement with , , the 0.5-W dissipation is within the Si4946EY 's rating and leaves headroom for starting current , the device being decoupled. The connections should be direct and as short as possible. When


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PDF AN603 Si9978DW of970-5600 08-Jun-00 mosfet based h bridge SI4946 Si4946EY si9979 AN603 h bridge Controller PWM Si9978 C423A
si9456

Abstract: SI9940DY
Text: the low- and high-side MOSFETs while the Si9456DY (SO-8, 3.5 A), Si9945 (SO-8, 3.3A) or Si4946EY (SO , voltage range of 20 to 40 V. The device is specified over the industrial temperature range (-40° to +85° C , Number 4946EY SÌ9945 SÌ9955 SÌ9956 AN709 Vishay Siliconix r DS{on) 0.055 0.10 0.13 0.30 Qg , Si4946EY yields current ratings of 3.5 A or 4.5 A, respectively. Any circuit which generates signals with , the circuit. Proper PC board layout techniques and device decoupling will take care of these problems


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PDF AN709 Si9976DY Si9456DY Si9945 Si4946EY Si9940DY Si9945DY si9456
SI4946

Abstract: Si9940 brushless dc motor speed control simple circuit Resistance of a 30 KW brushless dc motor mosfet triggering circuit for dc motor HIGH STABILITY MOTOR CONTROL DIGITAL TACHOMETER si9979 Si4946EY Si9979CS ups active power easy 600
Text: device chosen. The Si4946EY LITTLE FOOT power MOSFET is a good choice for this application. Its worst , Si4946EY , 30 nC (Qg) is required for turn-on at a VGS of 10 V. Using the equation C = Qg/VGS, 3 nF is , required for the MOSFET selected. The Si4946EY requires 30 nC (Qg) at a VGS of 10 V (Figure 12). Using the


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PDF AN714 Si9979 Si9979, 08-Jun-00 SI4946 Si9940 brushless dc motor speed control simple circuit Resistance of a 30 KW brushless dc motor mosfet triggering circuit for dc motor HIGH STABILITY MOTOR CONTROL DIGITAL TACHOMETER Si4946EY Si9979CS ups active power easy 600
2009 - J200 mosfet

Abstract: Jamicon capacitor jamicon np capacitor u101b Jamicon capacitor np jamicon MC33937A KIT33937AEKEVBE Jamicon 47uf miniature 2.1mm DC power jack connector
Text: particular application. Final device in an application will be heavily dependent on proper printed circuit , -2 PC_LS_G MBRM140T3 D105 4 Si4946EY R109 51R Si4946EY PH_C 6 5 6 Q104-2 8 7 R106 51R 1 1 R105 51R Si4946EY PH_B 3 R100 DCB_NEG R108 51R Q102-1 2 R104 51R 1 R103 51R Si4946EY 4 R107 51R MBRM140T3 D104 Q103-2 4 R110 51R Si4946EY R111 51R R112 51R Si4946EY 2 0.040-1% 40mV/1A Create the


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PDF KT33937AUG KIT33937AEKEVBE J200 mosfet Jamicon capacitor jamicon np capacitor u101b Jamicon capacitor np jamicon MC33937A Jamicon 47uf miniature 2.1mm DC power jack connector
si9970

Abstract: brushless dc motor simple circuit ups active power easy 600 SI9955 tachometer vdo SI9956
Text: turn-on. For a 60-V dual n-channel MOSFET like the Si4946EY , 30 nC (Qg) is required for turn-on at a VGS , determine the device chosen. To Commutation Logic Current From 3-Phase MOSFET Bridge FIGURE 10 , , request 70585 www.siliconix.com 3-55 AN714 Vishay Siliconix The Si4946EY LITTLE FOOT® power


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PDF AN714 Si9979 Si9979, si9970 brushless dc motor simple circuit ups active power easy 600 SI9955 tachometer vdo SI9956
2009 - Not Available

Abstract: No abstract text available
Text: those listed under absolute maximum ratings may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , conditions for extended periods may affect device reliability. All voltage values are with respect to GND , information. The human body model is a 100-pF capacitor discharged through a 1.5-k resistor into each pin 2 , Product Folder Link(s): TPS43331-Q1 15 TPS43331-Q1 SLVSA38 ­ DECEMBER 2009 www.ti.com DEVICE


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PDF TPS43331-Q1 SLVSA38
2009 - Not Available

Abstract: No abstract text available
Text: those listed under absolute maximum ratings may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , conditions for extended periods may affect device reliability. All voltage values are with respect to GND , information. The human body model is a 100-pF capacitor discharged through a 1.5-k resistor into each pin 2 , Product Folder Link(s): TPS43331-Q1 15 TPS43331-Q1 SLVSA38 ­ DECEMBER 2009 www.ti.com DEVICE


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PDF TPS43331-Q1 SLVSA38
sud*50n025-06p

Abstract: SI9120 SUD70N03-04P SI9119 Si7810DN sud*50n025-09p sum45n25 si9110 SI2301ADS SI4732CY
Text: up to date information, package and device function selector guides, data sheets, SPICE models, a , isolated. A few critical device specifications are provided and sorted by VDS, VGS, package and then rDS , single device . Combining greatly reduced switching losses with on-resistance, WFET Power MOSFETs , DPAK MOSFETs with a PowerPAK SO-8 device that's less than half as big (32.6 mm2 versus 70 mm2) and , supplier of this device type, with the best on-resistance and 10 times as many MOSFETs as any other


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PDF VSA-SG0019-0310 sud*50n025-06p SI9120 SUD70N03-04P SI9119 Si7810DN sud*50n025-09p sum45n25 si9110 SI2301ADS SI4732CY
2009 - Not Available

Abstract: No abstract text available
Text: beyond those listed under absolute maximum ratings may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond , absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with , Enhanced Package (SLMA002) for more information. The human body model is a 100-pF capacitor discharged , www.ti.com DEVICE INFORMATION DAP PACKAGE (TOP VIEW) AGND VSTBYS VSTBY VINSB CSLEW VCP VLRS


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PDF TPS43331-Q1 SLVSA38
2009 - Not Available

Abstract: No abstract text available
Text: those listed under absolute maximum ratings may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , conditions for extended periods may affect device reliability. All voltage values are with respect to GND , information. The human body model is a 100-pF capacitor discharged through a 1.5-k resistor into each pin 2 , Product Folder Link(s): TPS43331-Q1 15 TPS43331-Q1 SLVSA38 ­ DECEMBER 2009 www.ti.com DEVICE


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PDF TPS43331-Q1 SLVSA38
2009 - CD1619

Abstract: TPS43331Q1
Text: those listed under absolute maximum ratings may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , conditions for extended periods may affect device reliability. All voltage values are with respect to GND , information. The human body model is a 100-pF capacitor discharged through a 1.5-k resistor into each pin 2 , Product Folder Link(s): TPS43331-Q1 15 TPS43331-Q1 SLVSA38 ­ DECEMBER 2009 www.ti.com DEVICE


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PDF TPS43331-Q1 SLVSA38 CD1619 TPS43331Q1
2009 - FP1 C40 BATTERY

Abstract: JP13 SLMA002 TPS43331QDAPRQ1
Text: may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating , device reliability. All voltage values are with respect to GND. Absolute negative voltage on these pins , body model is a 100-pF capacitor discharged through a 1.5-k resistor into each pin Submit , (s): TPS43331-Q1 15 TPS43331-Q1 SLVSA38 ­ DECEMBER 2009 www.ti.com DEVICE INFORMATION


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PDF TPS43331-Q1 SLVSA38 FP1 C40 BATTERY JP13 SLMA002 TPS43331QDAPRQ1
2009 - FP1 C40 BATTERY

Abstract: No abstract text available
Text: those listed under absolute maximum ratings may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , conditions for extended periods may affect device reliability. All voltage values are with respect to GND , information. The human body model is a 100-pF capacitor discharged through a 1.5-k resistor into each pin 2 , Product Folder Link(s): TPS43331-Q1 15 TPS43331-Q1 SLVSA38 ­ DECEMBER 2009 www.ti.com DEVICE


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PDF TPS43331-Q1 SLVSA38 FP1 C40 BATTERY
2009 - Not Available

Abstract: No abstract text available
Text: those listed under absolute maximum ratings may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those , conditions for extended periods may affect device reliability. All voltage values are with respect to GND , information. The human body model is a 100-pF capacitor discharged through a 1.5-k resistor into each pin 2 , Product Folder Link(s): TPS43331-Q1 15 TPS43331-Q1 SLVSA38 ­ DECEMBER 2009 www.ti.com DEVICE


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PDF TPS43331-Q1 SLVSA38
2009 - Not Available

Abstract: No abstract text available
Text: absolute maximum ratings may cause permanent damage to the device . These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended , affect device reliability. All voltage values are with respect to GND. Absolute negative voltage on , information. The human body model is a 100-pF capacitor discharged through a 1.5-kΩ resistor into each pin , TPS43331-Q1 SLVSA38 – DECEMBER 2009 www.ti.com DEVICE INFORMATION DAP PACKAGE (TOP VIEW) AGND


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PDF TPS43331-Q1 SLVSA38
si9946

Abstract: SI9956
Text: capacitor is determ ined by the gate charge required for the M OSFET selected. The Si4946EY requires 30 nC , the device being decoupled. The connections should be direct and as short as possible. When decoupling


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PDF AN603_ Si9978DW 09-NOV-94 si9946 SI9956
2004 - SLUP169

Abstract: 10A40V
Text: with a driver for the low-side synchronous rectifier MOSFET. The device operation is specified in the , Component selection 4.1 TPS40055 Device Selection The TPS4005x family of parts offers a range of , N−channel, 60 V, 3.8 A, 55 mΩ, SO8 Siliconix Si4946EY R1 1 Resistor, chip, 1 kΩ, 1/10 W


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PDF TPS40055 SLUP169 10A40V
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